CN101045990A - Etch resistant heater and assembly thereof - Google Patents
Etch resistant heater and assembly thereof Download PDFInfo
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- CN101045990A CN101045990A CN 200610172997 CN200610172997A CN101045990A CN 101045990 A CN101045990 A CN 101045990A CN 200610172997 CN200610172997 CN 200610172997 CN 200610172997 A CN200610172997 A CN 200610172997A CN 101045990 A CN101045990 A CN 101045990A
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Images
Abstract
An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20 DEG C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500 DEG C., and an etch rate in NF3 at 600 DEG C. of less than 100 A/min.
Description
The cross reference of related application
It is that the U.S. Patent application 60/771,745 and applying date on February 9th, 2006 is the preferential right of the U.S. Patent application 60/744741 on April 12nd, 2006 that the application requires the applying date, and these patent applications are incorporated herein by reference fully at this.
Technical field
The present invention relates generally to the well heater and the heater assembly that use in the electron device manufacturing.
Background technology
Manufacturing comprises that the technology of the electron device of unicircuit (IC), MEMS (micro electro mechanical system), opto-electronic device, flat-panel display device comprises several main technique steps, these steps comprise deposition/growth material controllably, and the material of deposition/growth is before controlled and normally removed selectively or changes.Chemical vapor deposition (CVD) is common depositing operation, and it comprises low-pressure chemical vapor deposition (LPCVD), atomic layer chemical vapor deposition (ALD or ALCVD), thermal chemical vapor deposition (TCVD), plasma enhanced chemical vapor deposition (PECVD), high density plasma CVD (HDP CVD), expansion thermal plasma body chemical vapor phase growing (ETP CVD), thermal plasma body chemical vapor phase growing (TPCVD) and metal organic chemical vapor deposition (MOCVD) etc.
In some CVD technology, under the state of low-voltage high-temperature, in reactor, use one or more gaseous reactants to form solid-state insulation or conductive layer at semiconductor wafer surface, this wafer is arranged on the substrate holder that is arranged on reactor.Substrate holder/pedestal can be used as well heater in CVD technology, and it comprises that generally at least one is used for the heating unit of heated chip; Perhaps can be used as electrostatic chuck (electrostatic chuck) (ESC), it comprises that at least one is used for the electrode of this wafer of static clamp; Perhaps can be well heater/ESC combination, it has the electrode that is used for heating with clamp.On silicon wafer, deposit after the film of pre-determined thickness, other exposed surface in reactor comprises reactor wall, reactor window, air injector surface, exhaust system surfaces and is exposed on the substrate holder surface in the depositing operation producing a parasitic deposition (spurious deposition).This parasitic deposition can have problems in deposition afterwards, therefore to regularly remove by cleaning procedure, that is, in some cases after each wafer process and in other cases after a collection of wafer process.Common cleaning procedure in this area comprises the fluorine-based cleaning of atom (atomic fluorinebased cleaning), fluorocarbon plasma cleaning, sulfur hexafluoride plasma cleaning, nitrogen trifluoride plasma cleaning and chlorine trifluoride cleaning.In this cleaning procedure, described reactor elements, for example wall, window, substrate holder and assembly etc. be expected to be corroded/eat away.
Except the strong corrosive environment in CVD technology, these technologies also are heated to high temperature, promptly will be above 1000 ℃ for silicon wafer.In addition, in these technologies, described wafer must be kept the specified temperature homogeneity simultaneously.In great majority were used, when contacting with the heating unit direct physical on heated surface, heat was delivered to wafer by conduction.Yet, between heated surface and heating unit, set up physics in some applications and contact unactual.Metal organic chemical vapor deposition (MOCVD) technology is widely used in the film growth, and film growth is the committed step in the little manufacturing of hi-tech.In MOCVD used, system was arranged in the environment of high vacuum, and wafer is positioned at surface of revolution (pedestal) upward to improve the homogeneity of epitaxial film simultaneously.Therefore, this rotating basis can not the Direct Contact Heating element.Heat can not be delivered to wafer from heating unit by convection current (because vacuum state) and conduction (because noncontact).Therefore, radiation (or using radiant heater element) is unique mechanism that can be used for conducting heat.In addition, the temperature required scope of the graphite base of the described wafer of its upper support can be up to above 1200 ℃.
In an embodiment of prior art, etch-resistant material can be used for for example element of pedestal/well heater/substrate holder.Under the high temperature in CVD technology, the rate of etch of etch-resistant material of the prior art (erosion rate) is pressed index law to be increased.Therefore, heater temperature oblique line of the prior art descends, and for example drops to 400 ℃ that can clean from depositing contingent 600-1000 ℃.This method will increase the life-span of well heater, but reduce overall yield considerably.
For the thermal modules of MOCVD Application Design generally uses high-intensity lamp as described radiant heater element.These lamps can rapid heating and cooling rapidly because its thermal mass is low.They also can be turned off at once, and temperature can slowly not reduce.The heating of high-intensity lamp can always not reach the desired temperatures homogeneity in wafer surface.The homogeneity of temperature can be improved with multi-region section lamp, but cost and maintenance needs can be increased.In addition, a lot of lamps use linear filament, and this makes them can not provide uniform heat to arrive circular wafer effectively.Be used for the thermal modules of MOCVD at some, use the resistance substrate well heater to provide stable and thermal source repeatably as radiant heater element.Most of in the prior art resistance heaters are tending towards having big thermal mass, this make they be not suitable on graphite base＞1000 ℃ high temperature uses.
A kind of etch-resistant material that is used for the frequent use of resistance substrate well heater (substrate holder that also can be used for non-heating) is an aluminium nitride, and wherein sintered aluminum nitride (AlN) is for the most common.Unfortunately, the sintering AlN substrate holder of prior art is subjected to great restriction, and just they can only be with＜20 ℃/minute speed heating or cooling.If heating or cool off too fastly, pottery generally will break.In addition, before ceramic fracture, can only keep the suitable temperature difference at whole substrate surface.
U.S. Patent No. 6,140,624 disclose the resistance heater with external coating (EC), and this external coating (EC) is selected from silicon carbide and norbide, is used for＞80% radiation efficiency.Yet, in the very high application of temperature, just, needing under the situation of heater temperature＞1500 ℃, because silicon carbide decomposes under high like this temperature, so coat of silicon carbide is with cisco unity malfunction.On the other hand, but have the well heater of norbide external coating (EC) feasible technically to carry out commerce manufacturing be unpractical.
This invention relates to improved device, for example ceramic heater or processing of wafers assembly, and such as using the thermal modules of improving well heater, this device has extraordinary thermo-efficiency for the high temperature that the wafer in the thermal modules is heated to needs.The device of this invention keeps the good temperature homogeneity on the wafer, and degrade at work and the risk of decomposing minimum, and have extraordinary anti-etching characteristic for the life-span that prolongs in the work.
Summary of the invention
On the one hand, the present invention relates to a kind of device such as radiation heater, it can be used as the part of thermal modules, has during in heater temperature＞1500 of improving ℃ to be higher than 70% radiation efficiency.In one embodiment, this device comprises that one comprises basic unit's substrate of boron nitride, a pyrolytic graphite heating unit that is superimposed upon on this basic unit's substrate one side and has the geometrical shape that forms a pair of contact jaw.First external coating (EC) that surrounds this heating unit is by at least a composition the in following: be selected from nitride, carbide, carbonitride or the oxynitrides of element in B, Al, Si, Ga, refractory hard metals, transition metal and the combination thereof, and the radiation efficiency of surrounding second external coating (EC) of first external coating (EC) is higher than 70% and radiation efficiency preferably at least 80% during in heater temperature＞1500 of improving ℃.
In one embodiment, the plane thermal conductivity of this second external coating (EC) is 3 times of plane thermal conductivity of first external coating (EC) at least, has therefore also improved the temperature homogeneity on the radiating surface of well heater, thereby has directly improved the wafer thermal uniformity.In the 3rd embodiment, second coating comprises pyrolytic graphite.
On the other hand, the present invention relates to a kind of for example thermal modules of MOCVD of high temperature semiconductors technology that is used for.This thermal modules comprises the above-mentioned well heater as radiant heater element.In one embodiment, this module also comprises reverberator heap, and this reverberator heap comprises that the high reflecting material that is arranged under the well heater preserves the heat of generation better.Can also increase additional tubular reflector guard shield and Gai Lai and help to preserve the well heater energy better.
Description of drawings
Figure 1A-1C is the sectional view of an embodiment of expression well heater, is formed by a plurality of processing steps as it, has the pyrolytic graphite external coating (EC) on a surface of this well heater.
Fig. 1 D-1E is the sectional view of the different embodiment of pedestal.
Fig. 1 F-1I is the sectional view of the different embodiment of well heater (substrate by coil shape forms) with coil shape.
Fig. 2 A-2B is the sectional view of second embodiment of expression ceramic heater, and this ceramic heater is formed by a plurality of processing steps, has the pyrolytic graphite external coating (EC) of the whole heater structure of protection.
Fig. 3 A is the top view of an embodiment of ceramic heater, wherein removed the geometrical shape that external coating (EC) is represented the pyrolytic graphite heating unit.
Fig. 3 B is the sectional view of another embodiment of heater assembly, and wherein this heater assembly has substrate holder, and substrate holder has the upper and lower surface of relatively flat, and the bar of basic horizontal expansion on substrate holder is arranged.
Fig. 4 is the sectional view of the thermal modules of the expression well heater that uses prior art, and it is used for calculating with check heater table surface temperature when described wafer is heated to 1500 ℃ temperature in computational fluid dynamics (CFD).
Fig. 5 is the sectional view of the thermal modules of the expression well heater that uses Figure 1A-1C, and it is used for calculating in computational fluid dynamics (CFD), check heater table surface temperature when wafer is heated to 1500 ℃ temperature.
Fig. 6 is the NF of expression differing materials in room temperature
3The chart of the rate of etch under the environment.
Fig. 7 is other material (comprising pyrolitic boron nitride and sintered aluminum nitride) of comparison prior art and the chart of the rate of etch of an embodiment in the time of 400 ℃ on well heater upper strata.
Fig. 8 is the photo (1/4 amplifies) that has the prior art well heater of pyrolytic boron nitride coating layer after etching.
Fig. 9 A is i.e. the rise testing apparatus figure of test of the heater temperature oblique line of a PG external coating (EC) PBN well heater of an embodiment that is used for the well heater of comparison prior art and well heater of the present invention.Fig. 9 B is the feature sectional view of well heater.
Figure 10 A and 10B are embodiment from the well heater of prior art and well heater of the present invention, i.e. the chart that PG external coating (EC) PBN well heater heater temperature that obtains and the base-plate temp that reaches compare.
The chart of Figure 11 external coating (EC) rate of etch of well heater of the present invention that is comparison after 400 ℃ of following etchings 1 hour and 5 hours.
Figure 12 is that comparison is at 600 ℃ of charts that descend lasting and pulsed etch external coating (EC) rate of etch of well heater of the present invention after 1 hour.
Embodiment
As used herein, will use approximate language and change any quantitative expression, these quantitative expressions can change but can not cause the change of related basic function.Therefore, by the value of revising such as one or more term of " approximately " and " basically ", may be not limited to specified exact value in some cases.
As used herein, term " well heater " is not limited to ceramic heater, can also be used to being illustrated in " pedestal ", " wafer holder " or " well heater/electrostatic chuck combination " that are used for heating or supporting silicon wafer in thermal modules, batch kiln, CVD treating chamber or the reactor.
As used herein, " heater assembly " and " thermal modules ", " batch kiln ", " CVD treating chamber " or " reactor " can be used alternatingly, and represent wherein electron device or the processed assembly of wafer.
Employed here " wafer substrate " or " substrate " are plural form, but this term is used for representing to use one or more substrates, and " wafer " and " substrate " or " wafer substrate " can be used alternatingly.Similarly, " well heater ", " pedestal ", " electrode " or " heating unit " can use plural form, but these terms are used for representing to use one or multinomial.
Hereinafter, outwards will begin from the innermost layer of well heater, just from basic unit's substrate, electrode, first supercoat, the present invention is described in further detail to last external coating (EC).
Basic unit's substrate: in one embodiment, this device comprises basic unit's substrate of being made up of the individual layer shown in Figure 1A, and basic unit's substrate 6 of dish type has to be processed into needs needed integrity of shape and workability.In another embodiment, basic unit's substrate 6 is not the successive dish type shown in Fig. 1 F, but is configured as the coil shape that is used for coil-type heater 5.Fig. 1 G-1I is the sectional view with different embodiment of coil shape basic unit heating of substrate device.
Basic unit's substrate 6 is characterised in that to have extraordinary physical property, for example thermotolerance and intensity.In one embodiment, basic unit's substrate 6 comprises a kind of in following: graphite; Refractory metal such as W, transition metal, rare earth metal and alloy; And their mixture.In another embodiment, basic unit's substrate 6 is agglomerated materials, also comprises sintering auxiliary material, metal or carbon dopant and impurity.In another embodiment, basic unit's substrate 6 comprises: agglomerated material, this agglomerated material comprise at least a in oxide compound, nitride, carbide, carbonitride or the oxynitride that is selected from B, Al, Si, Ga, refractory hard metals, transition metal; The oxide compound of aluminium, oxynitride; And combination.In another additional embodiments, basic unit's substrate 6 comprises for example mixture of boron nitride and aluminium nitride of such material, this material is characterized in that having goodish mechanical workout characteristic, basic unit's substrate is had be processed into needed integrity of shape and the machinability that needs.
Basic unit's substrate 6 is made up of in the mixed sintering body of boron nitride sintered body and boron nitride and aluminium nitride any one in one embodiment.In a second embodiment, basic unit's substrate 6 comprises the pyrolitic boron nitride plate that forms by CVD technology.In an embodiment shown in Fig. 1 D and the 1E, wherein this device is the pedestal form, and basic unit's substrate 6 comprises body graphite.
In another additional embodiments shown in Fig. 2 A, basic unit's substrate 6 comprises the central substrate 6A that scribbles the first external coating (EC) 6B.Layer 6B comprises nitride, carbide, carbonitride or oxynitride and the combination thereof that is selected from B, Al, Si, Ga, refractory hard metals, transition metal at least.In one embodiment, the first external coating (EC) 6B is included in temperature and is higher than 1500 ℃ or the still stable pBN as protective layer when higher.The process deposits that this first external coating (EC) 6B can spray by the physical gas-phase deposition, reaction electron beam (e bundle) deposition and the plasma body that comprise expansion thermal plasma (ETP), ion plating, chemical vapor deposition (CVD), plasma enhanced chemical vapor deposition (PECVD), metal organic chemical vapor deposition (MOCVD) (being also referred to as Metalorganic chemical vapor deposition (OMCVD)), metal organic vapor (MOVPE), for example sputter but is not limited to use these technologies on substrate 6A.Typical technology is ETP, CVD and ion plating.The thickness of the first external coating (EC) 6B can according to the technology of using and using for example CVD, ion plating and ETP wait and change, and change from 1 μ m to hundreds of μ m according to using.In one embodiment, the thickness of coating 6B is more than or equal to about 10 microns (μ m).In another embodiment, supercoat thickness is more than or equal to about 50 μ m.In the 3rd embodiment, thickness is more than or equal to about 100 μ m.In another additional embodiments, thickness is less than or equal to about 500 μ m.
Electrode layer/heating unit: in an embodiment, wherein this device is the ceramic heater form, and this device also comprises the electrode layer/heating unit 7 shown in Figure 1A.In one embodiment, heating unit 7 by mixture, titanium, tungsten, tantalum, the pyrolytic graphite of gold, platinum, silver, gold or platinum and silver and comprise boron and/or the pyrolytic graphite of norbide in anyly constitute, can stand 1500 ℃ or higher temperature.
In one embodiment, the thickness of electrode 7 is about 5-500 μ m.In a second embodiment, its thickness is 10-300 μ m.In the 3rd embodiment, the thickness of electrode layer is 30-200 μ m.In the 4th embodiment, the thickness of electrode 7 is in the scope of 1 to 30 μ m.In the 5th embodiment, the thickness of electrode 7 is from 1 to 10 μ m.
In one embodiment, the graphic width of electrode 7 arrives in the scope of 20mm 0.1.In a second embodiment, graphic width is 0.1 to 5mm.In the 3rd embodiment, graphic width is from 5 to 20 μ m.
In one embodiment, electrode layer 7 covers the upper surface or the lower surface of basic unit's substrate.In another embodiment, electrode layer 7 covers the upper surface and the lower surface of basic unit's substrate 6 simultaneously shown in Figure 1A and 1B.
Can use diverse ways that electrode layer 7 is deposited on basic unit's substrate 6, comprise physical vapor deposition (PVD), sputter, ion plating, plasma body support vapour deposition or chemical vapour deposition.
In one embodiment, last or lower electrode layer 7 (perhaps the upper/lower electrode layer simultaneously) is machined into predetermined shape, for example spiral shown in Fig. 2 A or sinuous geometric form, thus the current path of the continuous bar shaped pyrolytic graphite form of prolongation formed with opposite end (not shown).Current path can be spirally, serpentine, volution, zig-zag, labyrinth shape, spiral-line cast, helicoid, a kind of in helically wound and its combination arbitrarily continuously.Form the electric figure of heating zone, electricity isolation just, resistance heater path can be realized by existing technology, including, but not limited to little processing, little brad (micro-brading), laser cutting, chemical milling or e beam etching.
Supercoat.In the embodiment of well heater, shown in Figure 1B and 1C, the basic unit's substrate with electrode layer is then scribbled first supercoat 8.In the embodiment of the pedestal shown in Fig. 1 E, first supercoat 8 is applied directly on basic unit's substrate 6.
Supercoat 8 comprises a kind of in following at least: be selected from nitride, carbide, carbonitride or oxynitride and the combination thereof of the element that B, Al, Si, Ga, refractory hard metals, transition metal form; Has NaZr
2(PO
4)
3The zirconium phosphate of high thermal stability of NZP structure; At least the glass-ceramic composition SiO that comprises a kind of element of the 2a family, 3a family and the 4a family that are selected from the periodic table of elements
2Mixture with the plasma-resistant material of the oxide compound that comprises Y, Sc, La, Ce, Gd, Eu, Dy etc.
In one embodiment, nitride is selected from following a kind of: pyrolitic boron nitride (pBN), carbon doping pBN, aluminium nitride (AlN), carbon doped with Al N, oxygen doped with Al N, aluminum oxide, aluminium oxynitride, silicon nitride or its mixture.As used herein, aluminium nitride refers to AlN, AlON or its composition.In one embodiment, supercoat 8 is AlN, AlON, Al
2O
3Or the individual layer of its composition.In another embodiment, supercoat 8 is multilayers, comprises same material for example AlN, AlON, Al
2O
3Deng a plurality of coatings, or apply a plurality of different layers of AlN, AlON, pBN, SiN etc. continuously.
Supercoat 8 can be by any method deposition in physical gas-phase deposition, reaction electron beam (e bundle) deposition, plasma body spraying and the combination thereof of ETP, ion plating, CVD, PECVD, MOCVD, OMCVD, MOVPE, ion plasma deposition, for example sputter.Typical technology is ETP, CVD and ion plating.
The thickness of supercoat 8 is according to for example variations such as CVD, ion plating and ETP of technology of using and using.In one embodiment, the variation of layer 8 is from 1 μ m-500 μ m.The thick more common expectation life cycle of using of protective layer is just long more.In one embodiment, the thickness of supercoat 8 is 5-500 μ m.In a second embodiment, thickness is more than or equal to about 100 μ m.In another additional embodiments, thickness is for being less than or equal to about 300 μ m.
Last external coating (EC): in an embodiment shown in Fig. 1 C, this device also scribbles outer (perhaps external application) layer 9 that is coated with, and it is to form on the upper surface of coating 8.In an embodiment of the pedestal shown in Fig. 1 D, be coated with (perhaps external application) layer 9 outward and directly cover following substrate 8.In another additional embodiments of the pedestal shown in Fig. 1 E, substrate 8 is at first applied by overcoating 9 subsequently by first coating 8.
The function of last external coating (EC) 9 is scatterers (thermal spreader) and promptly strengthens the emittance of well heater under 1500 ℃ or the higher temperature at elevated temperature, also increases the speed that radiant heat shifts thus.This helps to reduce the well heater working temperature successively, thereby and avoids well heater to degenerate too early.External coating (EC) 9 further has the function that guard electrode 7 is not subjected to physical damage.
In an embodiment shown in Fig. 2 B, whole heater structure is coated with seal protection layer 9 (upper and lower surface) and protects heater structure, and especially coating/insulation layer 8, and the plasma body or the chemical products that use in its technology that avoids being cleaned are corroded.
In one embodiment, the plane thermal conductivity of material that external coating (EC) 9 comprises is for by at least 3 times of the thermal conductivity of coating 8 composition materials, thereby improves the thermal uniformity on the wafer.In a second embodiment, the plane thermal conductivity of material that external coating (EC) 9 comprises is at least 4 times of thermal conductivity of external coating (EC) 8.In one embodiment, external coating (EC) 9 comprise the thermal conductivity of material greater than 100W/m ° of K.In a second embodiment, external coating (EC) 9 comprise the thermal conductivity of material greater than 200W/m ° of K.In the 3rd embodiment, external coating (EC) 9 comprises pyrolytic graphite (" PG "), and it is functional under the very high temperature and keep under up to 2200 ℃ temperature stable.Because the essence of CVD depositing operation, PG is near 2.25 principle density and be atresia basically.
External coating (EC) 9 can be by any method deposition in physical gas-phase deposition, reaction electron beam (e bundle) deposition, plasma body spraying and the combination thereof of ETP, ion plating, CVD, PECVD, MOCVD, OMCVD, MOVPE, for example sputter.
The thickness of external coating (EC) 9 is according to for example variations such as CVD, ion plating and ETP of technology of using and using.In one embodiment, the thickness of layer 9 changes from 1 μ m-500 μ m.In a second embodiment, the thickness of supercoat 8 is 5 to 500 μ m.In the 3rd embodiment, thickness is more than or equal to about 100 μ m.In another additional embodiments, thickness is for being less than or equal to about 300 μ m.
In one embodiment, the average surface roughness of external coating (EC) 9 satisfies Ra＜=0.05 μ m, and maximum surfaceness satisfies Rmax＜=0.6 μ m.In another embodiment again, the scope of the surface roughness Ra of this layer is at＞0.5 μ m also＜3 in the μ m.In another additional embodiments, the Scheroscope hardness of external coating (EC) is 103 in the A direction, is 68 in the C direction.
Fig. 6 is that the expression differing materials is at room temperature NF
3The chart of the rate of etch under the environment.In Fig. 7, pyrolytic graphite (PG) comprises pyrolitic boron nitride (pBN) with other and compares in the rate of etch of 400 ℃ of agglomerating aluminium nitride materials.Be generally used for the prior art well heater in other material just quartz, pyrolitic boron nitride, sintering AlN are because corrosive nature all demonstrates weight loss and compares, the rate of etch of CVD AlN and PG demonstrates weight to be increased.In Fig. 8, Fig. 8 is the photo that has the prior art well heater of pBN external coating (EC) on the PG electrode layer, at continuous remote NF
3After 400 ℃ of following etchings 60 minutes, rapidly the pBN external coating (EC) is removed from following PG electrode in the plasma body.Yet, it should be noted that the PG electrode is complete in etch process.
Except the etching problem that etching brings, should notice that the prior art well heater that comprises the pBN external coating (EC) has soft relatively surface, and when silicon wafer is disposed thereon, be corroded to a certain extent.The pBN particulate that produces will generally stick to the rear side of wafer, this can pollute with follow-up silicon wafer treatment step in alignment issues.Because external coating (EC) just characteristic ratio pBN (" pyrolitic boron nitride "), the AlN etc. of pyrolytic graphite (" pG ") wants much hard, therefore well heater of the present invention seldom has the problem of such rear side.In addition, this material particle size is also very little, even thereby produced particulate, their size is for producing substantive issue still very little (for example less than 0.1 micron).In addition, such particulate also can be removed with ozone or oxygen gas plasma easily.
About heat radiation, because the thermal conductivity of direction is very high in face, and very low in the thermal conductivity of passing the face direction, the pG coating on the well heater can help any hot ununiformity in " diffusion " or the dispersed-heated device shape, therefore obtains more uniform surface temperature.In addition, because the high emissivity of comparing pBN (～0.4) (＞0.7) of pG, therefore well heater of the present invention is more effective radiation heater.
As shown in the figure, 9 pairs of prior aries of external coating (EC) have been made improvement, make well heater can resist more plasma attack and/or in a lot of semiconductor processes steps, use be used for the fluorine-containing chemical cleaner in cleaning reactor chamber, and prolonged the life-span of well heater thus.In one embodiment, owing to have the sealing of the protection external coating (EC) of pyrolytic graphite, well heater is at 600 ℃ of following NF
3In rate of etch less than 100 dusts/minute (A °/min).In a second embodiment, it is at 600 ℃ of following NF
3In rate of etch less than 50 dusts/minute (A °/min).Because the less corrosive nature that is subjected to of well heater influences, therefore the particulate that is expected to still less comes off from heater surfaces, compares pollution problem still less with the well heater of prior art.
In an embodiment of heater assembly, well heater 5 can be the Any shape/geometric shape that is suitable for terminal applies.In one embodiment, it is circular plate type as shown in Figure 3A.In another embodiment, it can be polygon plate shape, cylindrical, circular plate type or the cylinder with recessed or convex part.In another additional embodiments shown in Fig. 3 B, this well heater comprises the platform of supporting wafer 13 and extends and cross basically the bar 20 of the platform longitudinal axis from platform.At least one heating unit 7 heating is by the wafer 13 of platform supports.
Although the slope of well heater is following function in the CVD reactor: can utilize power supply, heater structure, wafer diameter and wafer pitch; But well heater of the present invention can be with the slope heating of at least 20 ℃ of per minutes, feasible wafer surface even heating by heating.In one embodiment, the slope of well heater is at least 30 ℃ of per minutes.In having an embodiment of multizone heater, well heater of the present invention is at least 75 ℃ for maximum temperature difference on the whole surface between lip-deep any two points of diameter 300mm.In a second embodiment, well heater is at least 100 ℃ for the whole lip-deep maximum temperature difference on diameter 300mm surface.
Should note, other parts in thermal modules or the CVD treating chamber need be resisted fluoro plasma, for example wafer carrier boat (boat), graphite winding heater, focusing ring, be used for supporting focusing ring and electrostatic chuck base assembly, be limited to gas distribution grid on the electrostatic chuck etc., can construct in the mode similar, just have the material that includes anti-etching characteristic such as the external coating (EC) of pG to well heater of the present invention.
The present invention is also by following nonrestrictive example explanation.
Example 1 and 2: thermal modules (heater assembly) is simulated in the calculating of carrying out computational fluid dynamics (CFD).First thermal modules is used the ceramic heater of prior art as shown in Figure 4.Second thermal modules is used the well heater of one embodiment of the invention as shown in Figure 5.These modules are used for single 2 " an inch wafer is heated to 1300 ℃, and uniformity coefficient is approximately+/-3 ℃.In metal organic chemical vapor deposition (MOCVD) technology, very strict to inhomogeneity requirement.Therefore, aspect temperature homogeneity every degree centigrade of variable effect to depositing operation.Temperature homogeneity on the wafer surface is restricted to poor by between the maximum temperature of 9 thermocouple measurements on entire wafer surface and minimum temperature.
As shown in the figure, wafer 13 is arranged on the pedestal 14 of rotation, therefore can not directly contact with well heater 5.Substrate 30 comprises the graphite with PBN coating.PBN reverberator 20 comprises that thickness is 2 sheets and 2 covers of 0.7mm.Mo reverberator 21 comprises that each thickness is 3 sheets and 1 pipe of 0.2mm.In this assembly, well heater 5 is by the pedestal 14 of radiation heating rotation, and this heat is transferred to wafer by conduction subsequently.
In example 1, ceramic heater 5 is radiation heaters of prior art, has the external coating (EC) that diameter is approximately the thin electrode of PBN center plate that 95mm, thickness are 2mm, pyrolytic graphite and comprises the PBN of 15 microns of thickness.In example 2, the well heater of the prior art in the example 1 also has and comprises that thickness is the external coating (EC) of the pyrolytic graphite of 40 μ m.
For three-dimensional model (granularity is 0.87 hundred ten thousand lattice (million cell)) is set up in the thermal analogy of the heater assembly of example 1 and 2.Under two conventional empirical temperature scopes, in treating chamber, use discrete vertical radiation pattern between the different subassemblies of thermal modules, to simulate the radiation on surface to surface:
1) surrounding temperature in treating chamber is 500 ℃; With 2) surrounding temperature in treating chamber is 800 ℃.In addition, use user's sub-routine to come joule heating in the simulation heating device and simulation graphite resistance rate function as temperature.
The data that table 1 expression obtains from the CFD model of two examples:
Table 1
| Example | Heater voltage V | Heater power kW | Heater resistance Ω | Surrounding temperature T ℃ | T ℃ of wafer medial temperature | T ℃ of well heater medial temperature | T ℃ of well heater top temperature |
| 1-A | 227.5 | 4.41KW | 11.72 | 500 | 1297+10 | 1933 | 2142 |
| 1-B | 203.0 | 3.57KW | 11.53 | 800 | 1298.5+9 | 1851 | 2004 |
| 2-A | 221.5 | 4.28KW | 11.47 | 500 | 1296+8.5 | 1800 | 1914 |
| 2-B | 198.5 | 3.47KW | 11.34 | 800 | 1299+6.5 | 1743 | 1816 |
In the embodiment of the well heater with prior art 1A, when wafer was heated to about 1300 ℃ target temperature, the well heater medial temperature was expected to be about 1933 ℃.Therefore yet the PBN surface can not stand to be higher than 1800 ℃ temperature in essence, can predict fully, and at this temperature spot (1933 ℃) with surpass the temperature of this temperature spot, the PBN surface of the well heater of prior art begins to break and makes well heater produce fault.In the well heater that has prior art equally and surrounding temperature are 800 ℃ routine 1B, when well heater is heated to 1300 ℃ of target temperatures, the well heater medial temperature reaches 1851 ℃, expectation can reach identical effect in the well heater of prior art, and the PBN surface can not stand＞1800 ℃ temperature.
In the routine 2A and 2B that use well heater of the present invention, wafer is heated to 1300 ℃ of identical target temperatures once more.In routine 2A, on average need heater temperature to be expected to be 1800 ℃.This model is clearly shown that because the improvement that the good plane thermal conduction of pyrolytic graphite external coating (EC) brings the wafer surface thermal uniformity.This magnitude that is improved as 2-3 ℃, because this technology is to inhomogeneity strict, this is still very crucial in MOCVD technology.The variation that should note 2-3 ℃ makes the temperature homogeneity of wafer improve about 15-20%.
In routine 2B, it is about 1743 ℃ that this model indication on average needs heater temperature, and this is lower than the critical working temperature of the pBN external coating (EC) well heater of prior art.This model indicates that also temperature homogeneity has been improved 2-3 ℃ magnitude on the wafer surface.
The external coating (EC) of the PG material on the CFD digital proof PBN well heater is particularly suited for for example high temperature application of MOCVD.Scribble top layer material for example the well heater of PG can under low about 100-150 ℃ than the well heater that does not have the PG external coating (EC) temperature, work, and can both reach identical base-plate temp.The difference of this well heater working temperature is very crucial, especially need be when working near 1800 ℃ of the maximum permissible temperatures at well heater.
Example 3: in this example, the radiation ceramic well heater of prior art is tested property testing in the sealing thermal modules 90 shown in Fig. 9 A-9B.In 9A, ceramic heater 5 have diameter be about 40mm and thickness be 2mm pBN center plate, pyrolytic graphite thin electrode and comprise the external coating (EC) of the pBN of thickness 0.15mm.The thermal modules 90 of sealing has the environmental stress (near vacuum state) of 30pa.Well heater 5 is comprised, and the coaxial pipe (diameter 90mm) of pBN 93, Mo 94 and graphite 95 centers on, and its function is a radiation shielding.In Fig. 9 B, the stacked wafer module that comprises the reflector panel 97 of pBN and Mo is arranged on and helps under the well heater by preserving heat to graphite base 91 reflections, and graphite base 91 is arranged on the position of 3-5mm on the well heater upper surface.The pedestal of diameter 55mm is only heated by thermal radiation.
Wafer is arranged on the pedestal 91, pedestal 91 be the rotation and can not directly contact with well heater.In heater mechanism, use 2 thermopairs, the temperature at a HEATER FOR MEASURING center, another measures the temperature at pedestal center.In this test, the power of well heater increases gradually and (heater voltage=65V and heater current=18A), heater temperature rises since 25 ℃ room temperature oblique line along with heater power increases up to about 1170 watts.Under the power of this setting, recording heater temperature is 1700 ℃, and to record base-plate temp be 1100 ℃.
Example 4: this example is identical with example 3 except using well heater of the present invention.In this example, the ceramic heater of diameter 40mm has diameter to be the thin electrode of about 40mm thickness pBN center plate that is 2mm, pyrolytic graphite and to comprise that thickness is the external coating (EC) of the pBN of 0.15mm.On this coating, well heater also has the external coating (EC) of the pyrolytic graphite that comprises that about 40 μ m are thick.
Table 2 expression is heated to pedestal the data that obtain about 1700 ℃ operation from example 3 and 4 thermal modules.Data also illustrate at Figure 10 A-10B, and its temperature oblique line that has compared two kinds of well heaters rises and tests.
Table 2:
| Example | Heater types | Base-plate temp T ℃ | Heater temperature T ℃ |
| 3 | The | 1100 | 1700 |
| 4 | PG external coating (EC) PBN well heater | 1380 | 1700 |
As shown in table 2, when two well heaters all are set at 1700 ℃ of identical T, the pedestal T that is used for well heater of the present invention (routine 4-PG external coating (EC) PBN well heater) than the pedestal T that the well heater (routine 3-PBN well heater) by prior art obtains exceed～300 ℃.For the heater temperature of same settings, when a well heater can reach higher base-plate temp, thermal modules had higher radiation efficiency, and Here it is is observed.
The another kind of method of observing this radiation efficiency is a well heater of the present invention with respect to need be at the prior art well heater of 1700 ℃ of work, and the work that can be provided under the lesser temps (for example be lower than 1500 ℃ or～1400 ℃) to be complementary with 1100 ℃ base-plate temp of prior art.Therefore, in order to obtain identical aimed wafer temperature, well heater of the present invention can be worked under than the lower temperature of the well heater of prior art.Because working temperature is lower, this factor is also helpful to the life-span that prolongs ceramic heater.
Same observedly be, well heater of the present invention also proves the average/uniform temperature curve more on base-plates surface, has improved about 15-20% than the well heater of prior art.
Example 5.In this test, the well heater that scribbles pyrolytic graphite is exposed to far-end NF in 400-600 ℃ temperature range
3Under the plasma body, observing nt wt net weight increases.For exposed region is about 151Cm
2Sample is exposed to lasting far-end NF
3Under the plasma body, the weight increase per hour is approximately 0.02g.According to NF
3The surface energy chromatic dispersion spectrometer (EDS) of etched PG sample is analyzed; The increase of finding weight comes the surperficial fluorocarbon responding layer that forms of comfortable PG.Learn (XPS) analysis by further with high resolution C (1s) spectrographic x-ray photoelectron spectroscopy, the fluorine responding layer of finding the PG surface is mainly by CF
2Form.After the heating, most of fluorocarbon evaporates in a vacuum.
According to this test, can calculate the PG actual amount that time per unit consumes in the formation of fluorocarbon layer.The result represents in following Fig. 3.As shown, the pyrolytic graphite coating is to 151Cm
2The weight that sample per hour demonstrates 0.02g increases, corresponding to the PG rate of consumption that per hour is approximately 0.19 μ (perhaps 31A/min).This and pyrolitic boron nitride～rate of etch of 1E6A/ minute compares.
Table 3
| Sample | C | F | O |
| Pyrolytic graphite | 99.6 | 0 | 0.4 |
| The PG-etching | 50.2 | 47.8 | 1.4 |
| PG-etching+annealing | 90.6 | 8.8 | 0.5 |
Example 6:, just, can find NF through continuing 60 minutes by round-robin depth analysis between argon sputter and the XPS analysis when analyzing by dynamic XPS from a sample of test 5
3The thickness of the fluorocarbon layer that plasma irradiating is set up on the pyrolytic graphite coating surpasses 500 dusts.After the heating, (＜10%=is in pyrolytic graphite can to find a spot of F.
Example 7: the sample (after etching) from test 5 exposes 2 hours down at 700 ℃ in a vacuum, can find that the thickness of fluorocarbon layer has reduced in fact.This result also confirms by EDS and XPS analysis.If this expression is a gas phase near the fluorine atom of enough high densitys of sample surfaces, then the fluorocarbon layer is only stable down at high temperature (400-600 ℃).If the fluorine density loss is favourable to the evaporation of fluorocarbon layer so.
Example 8.Revision test 5 and a sample are in 400 ℃ of continuous etchings of quilt 5 hours (rather than 1 hour).Mean P G rate of consumption (rate of etch) is lower than the last test (test in 1 hour) in as shown in figure 11 the test 5.If have only primary PG surface during this test explanation beginning, then fluorination will be carried out rapidly.Yet, after setting up certain thickness fluorocarbon layer, find new can the fluorizated pyrolytic graphite before, fluorine will need by this fluorocarbon layer diffusion.After some points, the fluorination rate will be subjected to the restriction of fluorine diffusivity.
Example 9.This is tested the effect of surveying the fluorine diffusivity and whether also limits the PG fluorination.Sample with PG coating 600 ℃ etched 1 minute, cut off plasma body subsequently 1 minute, PG is remained on 600 ℃ simultaneously.Such circulation is repeated 60 times, guarantee that whole plasma exposure time is 1 hour.60 minutes sample of the mean P G rate of consumption of this test and aforesaid lasting etching is compared.The result is higher than the average rate of etch that is continuing under the etching situation as shown in figure 12 in the average rate of etch under the pulsed etch situation.
Following illustrated.Under the pulsed etch situation, external coating (EC) is at first at NF
3Set up the fluorocarbon layer during 1 minute that plasma body is opened.Subsequently, in case with NF
3Plasma body stops, the fluorocarbon layer segment evaporation (being similar to example 7) that before forms.In case plasma body is opened once more, thereby the fluorocarbon layer is thinner, diffusion is faster and consumption PG is faster.And under continuous etched situation, the fluorocarbon layer is continuous growth always, has therefore reduced PG fluorination rate.So far for identical total exposure duration, the pulse testing etching gets faster.Yet the fluorocarbon rate of evaporation is obviously enough slow, and only causes pulse testing faster more or less.
Example 10: will be at the N continuous F of the PG under 400 ℃ and 600 ℃
3The plasma etching rate compares (seeing Figure 11 and 12), has only less relatively increase on rate of etch.In addition, the rate of etch under 600 ℃ still is starkly lower than 50A/min.As shown, well heater of the present invention allows cleaning reactor when well heater is remained on 600 ℃.
Example 11.Under the situation of not wishing to have with the fluorocarbon layer of the back side contacts of wafer, after cleaning and in reactor, introduce before the new wafer, in chip cavity, carry out of short duration electroless copper deposition operation, regulate this chamber, and on wall and well heater deposit thin.Replacedly, after cleaning, reactor cavity is removed the fluorocarbon layer by the very of short duration oxygen pulse flushing that comprises plasma etching from the surface of substrate holder of the present invention.In another example, heater assembly is stayed one short period in the vacuum, and the fluorocarbon layer is evaporated automatically from the surface.
These written explanations utilize example to come open the present invention, comprise optimal mode, also make those skilled in the art can make and use the present invention.The scope that the present invention can patent is defined by the claims, and can comprise other example that it may occur to persons skilled in the art that.If these other embodiment do not have the structural element of the word language that is different from claim, do not have the equivalent structure element of essential difference if perhaps comprise word language with claim, other so such embodiment within the scope of the claims.
Here all citing documents of mentioning are introduced the present invention at this by reference.
Claims (13)
1, a kind of device that in the processing of wafers chamber, uses, this device comprises:
Basic unit's substrate comprises in following a kind of: graphite; Refractory metal, transition metal, rare earth metal and its alloy; Agglomerated material comprises at least a in oxide compound, nitride, carbide, carbonitride or the oxynitride of the element that is selected from B, Al, Si, Ga, refractory hard metals, transition metal; The oxide compound of aluminium, oxynitride; And combination;
Wherein this basic unit's substrate scribbles the external coating (EC) of thermal conductivity greater than 100W/m ° of K.
2, the device of claim 1, wherein this device is a well heater, also comprises:
Heating unit comprises being layered in the on-chip pyrolytic graphite of basic unit;
Be coated in this heating unit and the on-chip the first layer of this basic unit, this layer comprises at least a in following: be selected from nitride, carbide, carbonitride or oxynitride and the combination thereof of the element of B, Al, Si, Ga, refractory hard metals, transition metal;
Wherein this first layer coating scribbles the external coating (EC) of thermal conductivity greater than 100W/m ° of K.
3, any one device among the claim 1-2, wherein the plane thermal conductivity of this external coating (EC) is at least 3 times of plane thermal conductivity of first coating.
4, any one device among the claim 1-3, wherein this first exterior coating comprises a kind of in following at least: pyrolitic boron nitride, aluminium nitride (AlN), aluminum oxide, aluminium oxynitride, silicon nitride or their mixture.
5, any one device among the claim 1-4, wherein this device is a pedestal, this basic unit's substrate comprises graphite, and external coating (EC) comprises pyrolytic graphite.
6, any one device among the claim 1-5, wherein this external coating (EC) comprises the material of thermal conductivity greater than 200W/m ° of K.
7, any one device among the claim 1-6, wherein this external coating (EC) comprises pyrolytic graphite (" PG "), and wherein this external coating (EC) deposits by any method in ETP, ion plating, ion plasma electrochemical plating, CVD, PECVD, MOCVD, OMCVD, MOVPE, electron beam deposition, plasma body spraying and the combination thereof.
8, any one device among the claim 1-7 is characterized in that at NF
3In 600 ℃ have less than 100 dusts/minute rate of etch.
9, any one device among the claim 1-8, wherein this device is the well heater that can heat with the climbing speed of at least 20 ℃/per minute.
10, any one device among the claim 2-9, wherein:
This basic unit's substrate comprises graphite;
Be layered in the on-chip heating unit of this basic unit and comprise pyrolytic graphite,
This first exterior coating comprises at least a in boron nitride and the aluminium nitride;
This external coating (EC) comprises the pyrolytic graphite of thickness between 1 μ m-500 μ m.
11, a kind of plasma processing chambers of process semiconductor wafers at least that is used for, this plasma body treating chamber comprises:
At least be used to heat the ceramic heater of described wafer;
Be limited to the gas distribution grid on the electrostatic chuck;
Be used for supporting the base of electrostatic chuck;
The purge gas source that is communicated with described chamber optionally;
Wherein the surface of at least one in well heater, gas distribution grid and the base scribbles the external coating (EC) that comprises pyrolytic graphite, and wherein purge gas source comprises NF
3And Cl
2
12, the plasma processing chambers of claim 11, wherein this well heater scribbles the external coating (EC) that comprises pyrolytic graphite, and wherein this well heater comprises:
Basic unit's substrate comprises a kind of in following: graphite; Refractory metal, transition metal, rare earth metal and its alloy; Agglomerated material comprises oxide compound, nitride, carbide, carbonitride or the oxynitride of the element in a kind of B of being selected from, Al, Si, Ga, refractory hard metals, the transition metal at least; The oxide compound of aluminium, oxynitride; And combination;
Heating unit comprises being layered in the on-chip pyrolytic graphite of this basic unit;
First exterior coating, this layer comprise at least a in the nitride, carbide, carbonitride or the oxynitride that are selected from the element in B, Al, Si, Ga, refractory hard metals, the transition metal and the combination thereof;
Wherein first coating, heating unit and the basic unit's substrate below this pyrolytic graphite external coating (EC) protection isolated described clean air, is used to make well heater at NF
3In have rate of etch under 600 ℃ less than 100A/ minute.
13, the plasma processing chambers of any one among the claim 11-12, wherein this well heater is at NF
3In 600 ℃ of rate of etch that have less than 50A/ minute.
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US77174506P | 2006-02-09 | 2006-02-09 | |
| US60/771745 | 2006-02-09 | ||
| US60/744741 | 2006-04-12 | ||
| US11/550785 | 2006-10-18 |
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| Publication Number | Publication Date |
|---|---|
| CN101045990A true CN101045990A (en) | 2007-10-03 |
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ID=38770902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200610172997 Pending CN101045990A (en) | 2006-02-09 | 2006-11-30 | Etch resistant heater and assembly thereof |
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| Country | Link |
|---|---|
| CN (1) | CN101045990A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102257436A (en) * | 2008-12-19 | 2011-11-23 | 卡尔蔡司Smt有限责任公司 | Wafer chuck for EUV lithography |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN107083541A (en) * | 2017-04-21 | 2017-08-22 | 大连理工大学 | A kind of MOCVD heating dish prepared for high quality oxide semi-conducting material |
| CN110662314A (en) * | 2019-09-10 | 2020-01-07 | 博宇（天津）半导体材料有限公司 | Heater and preparation method thereof |
| CN111283334A (en) * | 2020-03-18 | 2020-06-16 | 常熟通乐电子材料有限公司 | Processing technology of composite heating body |
| CN112831833A (en) * | 2020-12-31 | 2021-05-25 | 中核北方核燃料元件有限公司 | Material boat that can fix a position |
| TWI851627B (en) * | 2018-12-06 | 2024-08-11 | 美商應用材料股份有限公司 | Coated article |
| US12442072B2 (en) | 2021-11-22 | 2025-10-14 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
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2006
- 2006-11-30 CN CN 200610172997 patent/CN101045990A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102257436A (en) * | 2008-12-19 | 2011-11-23 | 卡尔蔡司Smt有限责任公司 | Wafer chuck for EUV lithography |
| CN103451726A (en) * | 2013-08-27 | 2013-12-18 | 天威新能源控股有限公司 | Water chilling ingot furnace and ingot casting process thereof |
| CN107083541A (en) * | 2017-04-21 | 2017-08-22 | 大连理工大学 | A kind of MOCVD heating dish prepared for high quality oxide semi-conducting material |
| TWI851627B (en) * | 2018-12-06 | 2024-08-11 | 美商應用材料股份有限公司 | Coated article |
| CN110662314A (en) * | 2019-09-10 | 2020-01-07 | 博宇（天津）半导体材料有限公司 | Heater and preparation method thereof |
| CN111283334A (en) * | 2020-03-18 | 2020-06-16 | 常熟通乐电子材料有限公司 | Processing technology of composite heating body |
| CN112831833A (en) * | 2020-12-31 | 2021-05-25 | 中核北方核燃料元件有限公司 | Material boat that can fix a position |
| CN112831833B (en) * | 2020-12-31 | 2024-04-09 | 中核北方核燃料元件有限公司 | Material boat capable of being positioned |
| US12442072B2 (en) | 2021-11-22 | 2025-10-14 | Applied Materials, Inc. | Atomic layer deposition coatings for high temperature ceramic components |
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