CN101051595A - Carbon nano tube field transmitting electronic source - Google Patents
Carbon nano tube field transmitting electronic source Download PDFInfo
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- CN101051595A CN101051595A CNA2006100601865A CN200610060186A CN101051595A CN 101051595 A CN101051595 A CN 101051595A CN A2006100601865 A CNA2006100601865 A CN A2006100601865A CN 200610060186 A CN200610060186 A CN 200610060186A CN 101051595 A CN101051595 A CN 101051595A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
- H01J9/02—Manufacture of electrodes or electrode systems
- H01J9/022—Manufacture of electrodes or electrode systems of cold cathodes
- H01J9/025—Manufacture of electrodes or electrode systems of cold cathodes of field emission cathodes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
- H01J1/3044—Point emitters
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/304—Field emission cathodes
- H01J2201/30446—Field emission cathodes characterised by the emitter material
- H01J2201/30453—Carbon types
- H01J2201/30469—Carbon nanotubes (CNTs)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2329/00—Electron emission display panels, e.g. field emission display panels
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Abstract
本发明涉及一种碳纳米管场发射电子源，其包括：一导电基体、至少一碳纳米管和一表面修饰层，该导电基体具有一顶部，该碳纳米管一端与该导电基体顶部电性连接，另一端沿该导电基体顶部向外延伸，该表面修饰层均匀分布和浸润于该碳纳米管的表面，并覆盖该碳纳米管向外延伸的一端，该表面修饰层的选出功低于碳纳米管的逸出功。
The invention relates to a carbon nanotube field emission electron source, which includes: a conductive substrate, at least one carbon nanotube and a surface modification layer, the conductive substrate has a top, and one end of the carbon nanotube is electrically connected to the top of the conductive substrate. connected, the other end extends outward along the top of the conductive substrate, the surface modification layer is uniformly distributed and wetted on the surface of the carbon nanotube, and covers the outwardly extending end of the carbon nanotube, the surface modification layer has a low extraction work The work function of carbon nanotubes.
Description
[technical field]
The present invention relates to a kind of field emitting electronic source, relate in particular to a kind of carbon nano tube field transmitting electronic source.
[background technology]
(Carbon Nanotube CNT) is a kind of new carbon to carbon nano-tube, is found in 1991 by Japanology personnel Iijima, see also " Helical Microtubules of Graphitic Carbon ", S.Iijima, Nature, vol.354, p56 (1991).Carbon nano-tube has extremely excellent electric conductivity, good chemical stability and big draw ratio, and it has almost, and long-pending (tip end surface is long-pending littler near the tip end surface of theoretical limit, its internal field more concentrates), thereby carbon nano-tube has potential application prospect at the field emission vacuum electronic source domain.Present studies show that, carbon nano-tube is one of known best field emmision material, its tip size has only a few nanometer to tens nanometers, has extremely low field emission voltage (less than 100 volts), can transmit great current density, and electric current stabilizer pole, long service life, thereby be suitable as very much a kind of splendid point-like electron source, be applied in the electron emission part of scanning electron microscopy (ScanningElectron Microscope), transmission electron microscope equipment such as (Transmission Electron Microscope).
Existing carbon nano tube field transmitting electronic source generally comprises a conducting base at least and as the carbon nano-tube of transmitting terminal, this carbon nano-tube is formed on this conducting base.At present, the method that is formed on the conducting base of carbon nano-tube mainly comprises mechanical means and growth in situ method.Wherein, mechanical means is to handle synthetic good carbon nano-tube by atomic force microscope, and carbon nano-tube is fixed on the conducting base with conducting resinl, and this kind method program is simple, but operation is not easy and efficient is low.In addition, carbon nano-tube is to cover on conducting base by conducting resinl in the carbon nano tube field transmitting electronic source that obtains by this method, in use, it is good that the electric contact state of carbon nano-tube and conducting base is not envisioned, and is difficult for giving full play to the field emission performance of carbon nano-tube.
The growth in situ method is elder generation's plated with gold metal catalyst on conducting base, go out carbon nano-tube by method direct growth on conducting base such as chemical vapour deposition (CVD), arc discharge or laser evaporation methods then, though this kind method is simple to operate, electrically contacting of carbon nano-tube and conducting base is good.But, the binding ability of carbon nano-tube and conducting base a little less than, carbon nano-tube easily comes off or is extracted by electric field force in use, thereby causes field emitting electronic source to damage.And because the direction of growth of the uncontrollable carbon nano-tube of this method, so still there is the problem of the low and poor controllability of efficient, in addition, the production cost of this method is higher.
In addition, carbon nano-tube is applied to field emitting electronic source often needs by the big electric current of carbon nano-tube emission.(size of an emission current is decided by the size of the work function (Work Function) of local electric field size and field-transmitting cathode for Fowler-Nordheim, F-N) equation according to Fu Le-Nuo Dehan.Under same effect of electric field, the material of selecting to have lower work function can obtain bigger field emission current as field-transmitting cathode.Though existing carbon nano tube field transmitting electronic source has splendid field emission geometry and higher field enhancement factor (Enhancement Factor),, the work function of carbon nano-tube itself is 4.55 electron-volts (eV), only the work function with tungsten is suitable.
Therefore, be necessary to provide a kind of carbon nano-tube to combine with conducting base closely, electrically connect well, and have lower work function, thereby have the carbon nano tube field transmitting electronic source of big emission current.
[summary of the invention]
Below, will a kind of carbon nano tube field transmitting electronic source that can give full play to the carbon nano-tube field emission performance be described with some embodiment.
A kind of carbon nano tube field transmitting electronic source, it comprises: a conducting base, at least one carbon nano-tube and a finishing coat, this conducting base has a top, this carbon nano-tube one end and this conducting base top electrically connect, the other end stretches out along this conducting base top, this finishing coat evenly distributes and is infiltrated on the surface of this carbon nano-tube, and covers the outward extending end of this carbon nano-tube, and the work function of this finishing coat is lower than the work function of carbon nano-tube.
This finishing coat covers the surface of whole carbon nano-tube and conducting base.
This finishing layer material is zirconium carbide or titanium carbide.
The work function of this zirconium carbide is 3.32 electron-volts, and the work function of this titanium carbide is 3.82 electron-volts.
The thickness of this finishing coat is 1～10 nanometer.
The top of this conducting base is taper, truncated cone-shaped or cylindricality.
This conductive substrate material can be selected from tungsten, gold, molybdenum or platinum.
This carbon nano-tube is a multi-walled carbon nano-tubes.
The length of this carbon nano-tube is 10～100 microns, and diameter is 1～50 nanometer.
Compared to prior art, carbon nano-tube combines closely, electrically connects good in the carbon nano tube field transmitting electronic source with conducting base, the finishing coat of carbon nano tube surface can effectively reduce the work function of carbon nano tube field transmitting electronic source electron transmitting terminal, keep original emission geometry of carbon nano-tube simultaneously, under the constant situation of same transmit electric field, this carbon nano tube field transmitting electronic source has higher electron emission density and emission current.
[description of drawings]
Fig. 1 is the schematic perspective view of the carbon nano tube field transmitting electronic source of the embodiment of the invention.
Fig. 2 is the longitudinal sectional view of II part among Fig. 1.
Fig. 3 is the step of manufacturing schematic diagram of embodiment of the invention carbon nano tube field transmitting electronic source.
Fig. 4 is the schematic representation of apparatus of embodiment of the invention assembled carbon nano-tube field emitting electronic source.
Fig. 5 is the electron scanning micrograph of embodiment of the invention carbon nano tube field transmitting electronic source.
Fig. 6 modifies the current-voltage curve contrast schematic diagram of front and back for embodiment of the invention carbon nano tube field transmitting electronic source.
[embodiment]
The present invention is described in further detail below in conjunction with accompanying drawing.
See also Fig. 1 and Fig. 2, the embodiment of the invention provides a kind of carbon nano tube field transmitting electronic source 10, and this carbon nano tube field transmitting electronic source 10 comprises a conducting base 12, a carbon nano-tube 14 and a finishing coat 16.This conducting base 12 is made by electric conducting material, as tungsten, gold, molybdenum, platinum etc.For measuring conveniently, present embodiment conducting base 12 adopts the surface to be coated with atomic force microscope 18 (AtomicForce Microscope, probe AFM) of gold layer.This conducting base 12 has a top 122, and this top 122 is taper.One end 142 of this carbon nano-tube 14 electrically connects with the top 122 of this conducting base 12, and is attached on this conducting base 12 by Van der Waals force.The other end 144 of this carbon nano-tube 14 extends to the direction away from conducting base 12 along the top 122 of this conducting base 12, as the electron transmitting terminal of this field emitting electronic source 10.In the present embodiment, this carbon nano-tube 14 is a multi-walled carbon nano-tubes, and its diameter range is 1～50 nanometer, is preferably 15 nanometers, and length range is 10～100 microns, is preferably 50 microns.This finishing coat 16 is infiltrated on the surface of carbon nano-tube 14, and covers the surface of this carbon nano-tube 14 as an end 144 of electron transmitting terminal at least.The work function of these finishing coat 16 materials is lower than the work function of carbon nano-tube 14.Preferably, this finishing coat 16 is selected titanium carbide or zirconium carbide for use, and it is selected merit and is respectively 3.82 electron-volts and 3.32 electron-volts.The thickness of this finishing coat 16 is 1～10 nanometer, is preferably 5 nanometers.In the present embodiment, this finishing coat 16 also can cover the surface of whole carbon nano-tube 14 and conducting base 12.Because carbon nano-tube 14 is as an end 144 surface infiltrations of electron transmitting terminal and be coated with finishing coat 16 than carbon nano-tube 14 lower work functions, under the electric field action of identical size, the emission current of this carbon nano-tube field emission source 10 enlarges markedly than the emission current of existing carbon nano tube field transmitting electronic source.Adopt titanium carbide or zirconium carbide can reach 100 micromicroamperes as the field emission current of the carbon nano tube field transmitting electronic source 10 of finishing coat 16 in the present embodiment, be preferably 45～65 micromicroamperes, current emission density can reach 5.7 * 10
7A/cm
2Further, through measuring, when 10 emission currents of present embodiment carbon nano tube field transmitting electronic source were 45～65 micromicroamperes, emitting electrons was not found depleted phenomenon in 50,000 seconds continuously, thereby the carbon nano tube field transmitting electronic source 10 of this process finishing has the good life-span.
In addition, conducting base 12 also can be designed to other shapes according to actual needs in the embodiment of the invention.The top of this conducting base 12 also can be other shapes, as truncated cone-shaped or tiny cylindricality, and is not limited to taper.The carbon nano tube field transmitting electronic source 10 of present embodiment can be applicable to field emission electron source apparatus such as Field Emission Display, electron gun, microwave amplifier, x-ray source or e-beam lithography.
See also Fig. 3 and Fig. 4, a kind of method of making carbon nano tube field transmitting electronic source that the embodiment of the invention provides mainly is made up of following steps.
(1) provide two conducting bases 32 and 42, it has conical top 322 and 422 respectively.This two top 322 and 422 is oppositely arranged, and spaced apart certain distance.The solution 50 that pipettes a small amount of carbon nanotubes and can immerse in this solution 50 both between this two top 322 and 422 jointly.
(2) this two conducting base 32 and 42 is applied an alternating voltage 60, be assembled between this two top 322 and 422 up at least one carbon nano-tube.
(3) cut off the electric current between two conducting bases 32 and 42 and remove solution 50 between relative two tops 322 of above-mentioned two conducting bases and 422.
(4) separate two opposite current conducting basal bodies 32 and 42,, form carbon nano tube field transmitting electronic source so that at least one carbon nano-tube is attached to the top of at least one conducting base.
(5) surface of modifying this carbon nano-tube makes this field emitting electronic source have lower work function.
In the present embodiment, described conducting base 32 and 42 all adopts the atomic force microscope probe of surface gold-plating.Conducting base 32 and 42 also can adopt other electric conducting material to make, and as tungsten, gold, molybdenum, platinum etc., himself shape can design according to actual needs.Top 322 and 422 also can be other shapes, as truncated cone-shaped or tiny cylindricality, and is not limited to taper.Be to be noted that when the end face of top 322 and 422 is the plane, the part end face of two tops 322 and 422 is oppositely arranged, be oppositely arranged as the edge of both ends of the surface.In addition, the distance between this two top 322 and 422 should be set according to the length of carbon nanotube that is adopted, and is preferably close with length of carbon nanotube, should not be too big, otherwise be unfavorable for assembling.This spacing distance is generally less than 100 microns, is preferably 10～20 microns.
The solution 50 of described carbon nanotubes is to be primary solvent with the isopropyl alcohol, and the method by ultrasonic concussion makes carbon nano-tube evenly disperse therein to obtain.For making this solution 50 stable, also can add a spot of ethyl cellulose.Carbon nano-tube is for adopting low-pressure chemical vapor deposition (Low PressureChemical Vapor Deposition, LP-CVD) synthetic multi-walled carbon nano-tubes.Certainly, solution 50 also can adopt the additive method preparation, for example adopts treatment steps such as other solvents, stabilizer or increase separating and filtering, is advisable to obtain uniform and stable carbon nano-tube solution, needn't exceed with specific embodiment.
In addition, be understandable that the concentration of solution 50 may influence assembled quantity of carbon nanotubes of later stage.Generally, the concentration of solution 50 is big more, and the later stage then is easier to assemble many carbon nano-tube.Therefore, can allocate the concentration of solution 50 according to actual needs,, then should reduce the concentration of solution 50 as far as possible as only assembling a carbon nano-tube.Otherwise, also can control assembled quantity of carbon nanotubes to a certain extent by adjusting the concentration of solution 50.When avoiding emitting electrons, the mutual interference effect between the carbon nano-tube, present embodiment are only assembled a carbon nano-tube on conducting base.
In addition, in the step (2), the peak value of described alternating voltage is preferably in 10 volts, and frequency is between 1,000 to 10 megahertzes.Present embodiment mainly is according to dielectrophoresis method principle: in AC field, carbon nano-tube in the solution 50 is to the big direction motion of electric field strength, finally move to the zone relative, two tops 322 of field intensity maximum, and be adsorbed on this two top 322 and 422 with 422.After this, carbon nano-tube dependence firmly is adsorbed on the surface of top 322 and 422 with the Van der Waals force of this two top 322 and 422.Generally, only need several seconds to tens seconds conduction time, so this assemble method weak point consuming time, the efficient height.
In the step (5), the method for modifying of this carbon nano tube surface further may further comprise the steps:
At first, form a metal level on the surface of this carbon nano-tube, this metal level is selected for use has low work function, high melt point, and have good infiltrating material with carbon nano tube surface.In the present embodiment, this metal level is selected Titanium or metal zirconium for use.The formation method of this metal level comprises that it is that the metal level of 1～10 nanometer is in this carbon nano tube surface that the method by magnetron sputtering or electron beam evaporation forms a thickness.Preferably, the method for present embodiment by magnetron sputtering forms metal zirconium layer that a thickness is 5 nanometers or layer of titanium metal in this carbon nano-tube be attached with the conducting base surface of carbon nano-tube.
Then, in vacuum environment, on this is attached with the conducting base of carbon nano-tube, apply a high current emitting electrons scheduled time,, finish modification carbon nano tube surface so that the metal level of this carbon nano tube surface and carbon nano-tube generation chemical reaction are carbonized and form finishing coat.In the present embodiment, be 30 minutes to 2 hours this conduction time, is preferably 30 minutes.If the time very little this metal level can not be carbonized time in the oversize useful life that then can have influence on carbon nano-tube fully.Preferably, the finishing coat of formation is titanium oxide or zirconia layer.In addition, the process of this carbonized carbonaceous nanotube surface metal level also can realize by annealing in process.
Those skilled in the art of the present technique should understand, because carbon nano-tube is mainly by one end emitting electrons, in fact only need control to form the end that a metal level covers this carbon nano-tube emitting electrons, the end that this carbon nano-tube emitting electrons is modified in further then carbonization gets final product.
In addition, be to be noted that and adopt monitoring system that whole carbon nano-tube assembling process is monitored, thereby realize monitoring in real time, adjustment in real time, improve rate of finished products.For example, be to be in off state to assemble after the carbon nano-tube this both are in channel status according to unassembled two tops 322 and 422 of going up carbon nano-tube, can monitor these two states easily.In the present embodiment, the monitoring method of employing is exactly according to above-mentioned principle, series connection one resistance (not shown) in circuit shown in Figure 4, the wave form varies of observing these resistance two ends with oscilloscope.Undergo mutation when waveform and to represent that then carbon nano-tube has been assembled between two tops 322 and 422, at this moment just can the step-down outage and remove drop.Certainly, also can adopt other monitoring method and equipment to carry out, be not necessarily limited to present embodiment.
And then, whole assembling process all can be realized automation mechanized operation and monitoring, avoid the uncontrollability of carbon nano tube growth in manual or half manually operated deviation and the chemical vapour deposition technique, enhance productivity, strengthen controllability, simultaneously required production equipment is simple, and production cost is low, is fit to carry out large-scale production.
In addition, the embodiment of the invention can further be made the carbon nano-tube field emission array that comprises a plurality of carbon nano tube field transmitting electronic sources and is used for as the flat field emission display as electron emission source.A negative electrode layer that is formed with a plurality of conducting bases directly can be immersed and contain in the solution of carbon nano-tube.By applying a voltage to this negative electrode layer and another mobilizable conducting base, and will this mobilizable conducting base top one by one near the conducting base top that is formed at negative electrode layer, carbon nano-tube is assembled in respectively on these a plurality of conducting bases, forms finishing coat by carbon nano-tube modified surface at last and get final product.
See also Fig. 5, can find out from electron scanning micrograph, carbon nano-tube is assembled into the tip of atomic force microscope, and has been straightened.This is that two ends have electric charge because carbon nano-tube is assembled in the two top processes polarized generation eelctric dipole distance in electric field, and electric field has one along its axial component to its active force, carbon nano-tube is stretched become straight.
See also Fig. 6, through measuring, the unlatching electric field strength of the carbon nano tube field transmitting electronic source after present embodiment is modified by titanium carbide or zirconium carbide is respectively about 1.2V/ μ m (volt/micron) and 1.05V/ μ m, be lower than the carbon nano tube field transmitting electronic source (about 1.5V/ μ m) before modifying, the carbon nano tube field transmitting electronic source field emission current after the modification also enlarges markedly.In addition, through measuring, be respectively 35.2nN (Na Niudun) and 26.2nN by the carbon nano tube field transmitting electronic source after titanium carbide or the zirconium carbide modification corresponding to the carbon nano-tube withdrawal force of opening electric field strength, be lower than the carbon nano tube field transmitting electronic source (54.4nN) before modifying.Therefore, carbon nano-tube combines closely with conducting base in the carbon nano tube field transmitting electronic source after the modification, and electrically connects good.
The assemble method of carbon nano tube field transmitting electronic source of the present invention is general only to need several seconds to tens seconds, weak point consuming time, efficient height.And whole assembling process all can be realized automation mechanized operation and monitoring, enhances productivity, and strengthens controllability.Simultaneously required production equipment is simple, and production cost is low, is fit to carry out large-scale production.In addition, the finishing coat of carbon nano tube surface can effectively reduce the work function of carbon nano tube field transmitting electronic source electron transmitting terminal, keep original emission geometry of carbon nano-tube simultaneously, keeping under the constant situation of emission electric field, this carbon nano tube field transmitting electronic source has higher electron emission density and emission current.
Those skilled in the art of the present technique should understand, also can handle construction from part or growth in situ method assembled carbon nano-tube on conducting base in the manufacture method of carbon nano tube field transmitting electronic source of the present invention by existing other modes such as microscope, form finishing coat by carbon nano-tube modified electron transmitting terminal portion again, also can increase the field emission current of carbon nano-tube field emission electron equally with low work function.
In addition, those skilled in the art also can do other variations in spirit of the present invention, and certainly, the variation that these are done according to spirit of the present invention all should be included within the present invention's scope required for protection.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| CN2006100601865A CN101051595B (en) | 2006-04-05 | 2006-04-05 | Carbon nano tube field transmitting electronic source |
| US11/514,596 US7579764B2 (en) | 2006-04-05 | 2006-09-01 | Field emission electron source having carbon nanotube |
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| CN2006100601865A CN101051595B (en) | 2006-04-05 | 2006-04-05 | Carbon nano tube field transmitting electronic source |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465254B (en) * | 2007-12-19 | 2010-12-08 | 北京富纳特创新科技有限公司 | Thermal emission electron source and preparation method thereof |
| CN103050349A (en) * | 2012-12-25 | 2013-04-17 | 青岛盛嘉信息科技有限公司 | Processing method of field emitting cathode |
| CN103050351A (en) * | 2012-12-28 | 2013-04-17 | 青岛润鑫伟业科贸有限公司 | Processing method of field emitting cathode |
| CN108701571A (en) * | 2016-03-01 | 2018-10-23 | 株式会社日立高新技术 | Field emission electron source, its manufacturing method and electron beam device |
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| CN101425435B (en) * | 2007-11-02 | 2013-08-21 | 清华大学 | Field emission type electron source and its manufacturing method |
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| US6504292B1 (en) * | 1999-07-15 | 2003-01-07 | Agere Systems Inc. | Field emitting device comprising metallized nanostructures and method for making the same |
| EP1578599A4 (en) * | 2002-08-01 | 2008-07-02 | Oregon State | METHOD FOR SYNTHESIS OF NANOMETRIC STRUCTURES AT DEFINED LOCATIONS |
| JP4029289B2 (en) | 2003-08-12 | 2008-01-09 | 株式会社日立製作所 | Manufacturing method of conductive needle and conductive needle manufactured by the method |
| US20050116214A1 (en) | 2003-10-31 | 2005-06-02 | Mammana Victor P. | Back-gated field emission electron source |
| US7318763B2 (en) * | 2004-11-10 | 2008-01-15 | General Electric Company | Carbide nanostructures and methods for making same |
| CN1830753A (en) | 2005-03-10 | 2006-09-13 | 清华大学 | Carbon nanotube assembly method and carbon nanotube device |
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2006
- 2006-04-05 CN CN2006100601865A patent/CN101051595B/en active Active
- 2006-09-01 US US11/514,596 patent/US7579764B2/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101465254B (en) * | 2007-12-19 | 2010-12-08 | 北京富纳特创新科技有限公司 | Thermal emission electron source and preparation method thereof |
| CN103050349A (en) * | 2012-12-25 | 2013-04-17 | 青岛盛嘉信息科技有限公司 | Processing method of field emitting cathode |
| CN103050351A (en) * | 2012-12-28 | 2013-04-17 | 青岛润鑫伟业科贸有限公司 | Processing method of field emitting cathode |
| CN108701571A (en) * | 2016-03-01 | 2018-10-23 | 株式会社日立高新技术 | Field emission electron source, its manufacturing method and electron beam device |
| US10586674B2 (en) | 2016-03-01 | 2020-03-10 | Hitachi High-Technologies Corporation | Field emission electron source, method for manufacturing same, and electron beam device |
Also Published As
| Publication number | Publication date |
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| US20070236126A1 (en) | 2007-10-11 |
| US7579764B2 (en) | 2009-08-25 |
| CN101051595B (en) | 2010-11-10 |
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