CN101095219A - Carbon nanotube-based filler for integrated circuits - Google Patents

Abstract

A variety of characteristics of an integrated circuit chip arrangement with a chip and package-type substrate are facilitated. In various example embodiments, a carbon nanotube-filled material (110) is used in an arrangement between an integrated circuit chip (220, 340) and a package-type substrate (210, 350). The carbon-nanotube filled material is used in a variety of applications, such as package encapsulation (as a mold compound (330)), die attachment (374) and flip-chip underfill (240). The carbon nanotubes facilitate a variety of characteristics such as strength, thermal conductivity, electrical conductivity, durability and flow.

Description

Carbon nanotube-based fillers for integrated circuits

technical field

The present invention relates to integrated circuit devices and methods thereof, and more particularly to integrated circuit molding or attachment fillers employing nanotube materials.

Background technique

Fillers such as mold compounds and underfills for integrated circuit chip applications play an important role in the fabrication and implementation of circuits. For example, integrated circuits, flip-chip type circuits, and other components are typically mounted on a substrate using a molding material that encapsulates the circuitry on the substrate. For some applications, the filler is used as an underfill under a circuit such as a chip, in or around a circuit connection such as a solder ball connector.

In either overmolding or underfill applications, the filler serves to hold the circuit and/or chip in place. Additionally, fillers can be used to electrically insulate certain circuits and connectors.

Various fillers have been used to achieve these objectives. Silica is a filler used in underfill and molding compounds. Typically, silica is mixed with another material, such as an epoxy resin, to achieve the material properties required for applications in integrated circuits and packaging, such as the strength to support such circuits and packages. Another filler is silver. Silver is also typically mixed with epoxy, often used to attach the die to the package.

In many circuit applications, it is important to manage the heat generated by the circuit. As integrated circuit devices are smaller and circuit packages are more compact, a large amount of current flows through a small area. Increased density and/or increased power consumption often results in increased heat generation, which poses potential problems for circuit components.

Filler and thermal conductivity with the mold compound, underfill (between the chip and package) and with the die as the material is applied has an impact on the removal of heat from the circuitry in the chip and the package and the circuitry connecting the two. Silicon dioxide typically has low thermal conductivity relative to conductive materials such as metals. Due to these characteristics, it is challenging to adequately remove heat from circuits employing encapsulation materials using silica fillers.

In some examples, insufficient heat removal can lead to lifetime and performance issues with integrated circuits. This problem is exacerbated by the higher manufacturing densities of integrated circuit devices. Further, as higher performance is required from integrated circuits, heat-related performance fluctuations can cause performance problems.

Contents of the invention

These factors and other difficulties present challenges for realizing various applications of circuit substrates.

Aspects of the invention include substrates and/or packages that may be implemented with integrated circuits and other devices. The invention is exemplified by a number of implementations and applications, some of which are summarized below.

Various applications of the invention relate to carbon nanotube enhanced integrated circuit chip packaging configurations. In various example embodiments, materials reinforced with carbon nanotubes are implemented to facilitate the mating relationship between the support substrate and the integrated circuit chip.

According to an example implementation, an integrated circuit interface material includes carbon nanotubes. The interface material facilitates providing structural support to the integrated circuit chip in configurations employing a supporting substrate.

According to another example embodiment of the present invention, an integrated circuit chip arrangement includes a carbon nanotube reinforced molding compound. An integrated circuit chip is attached to a support substrate. Basically the mold compound is over the integrated circuit chip and part of the supporting substrate. In some applications, the molding compound substantially encapsulates the integrated circuit chip, as well as the electrical connections between the chip and a supporting substrate or other components. The carbon nanotube material in the molding compound facilitates heat transfer from the integrated circuit chip and/or its electrical connections.

According to another example embodiment of the present invention, an integrated circuit chip arrangement includes a carbon nanotube enhanced underfill. The integrated circuit chip is connected to the support substrate through electrical conductors between the integrated circuit chip and the support substrate. The carbon nanotube-reinforced underfill is flowed between the integrated circuit chip and the substrate, substantially surrounding and supporting the electrical conductors. The carbon nanotube material in the underfill facilitates heat transfer from the conductor and/or the integrated circuit chip and/or the supporting substrate.

In connection with another example embodiment of the present invention, a carbon nanotube-reinforced bonding material is used to secure an integrated circuit chip to a support substrate. A bonding material is formed between the integrated circuit chip and the supporting substrate and physically connects the two. The carbon nanotube material in the bonding material facilitates heat transfer from the integrated circuit chip, the supporting substrate, and/or the connector between the two. In one implementation, the concentration of carbon nanotube material in the bonding material is sufficient to render the bonding material electrically conductive.

The above summary of the present invention is not intended to describe each illustrated embodiment or every implementation of the present invention. The Figures and Detailed Description that follow more particularly exemplify these implementations.

Description of drawings

The present invention may be more fully understood from the following detailed description of various embodiments of the invention considered in conjunction with the accompanying drawings, in which:

Figure 1A shows a cross-sectional view of a substrate-type material employing carbon nanotube fillers, according to an exemplary embodiment of the present invention;

Figure 1B shows a cross-sectional view of a substrate-type material employing carbon nanotubes and silica fillers according to another exemplary embodiment of the present invention;

Figure 2 illustrates a flip-chip device employing a carbon nanotube underfill according to another example implementation of the present invention; and

Figure 3 shows an integrated circuit device having a BGA type substrate and an integrated circuit chip attached thereto, according to another example implementation of the present invention.

Detailed ways

While the present invention is applicable to various modifications and alternative forms, features thereof have been shown by way of example in the drawings and will be described in detail. It should be understood, however, that the invention is not limited to the particular embodiments described herein. On the contrary, the invention is to cover all modifications, equivalents, and alternatives falling within the scope of the invention as defined in the appended claims.

It is believed that the present invention is applicable to various circuits and methods that include and/or benefit from encapsulation materials, particularly those that use chip-package configurations such as molding or potting. While the invention is not necessarily limited to these applications, a full understanding of the invention can be obtained through a discussion of examples in this context.

According to an example embodiment of the present invention, carbon nanotube type fillers are implemented for integrated circuit chip packaging configurations. Various applications include attaching integrated circuits to die on packaged substrates. Other applications include forming interfaces between circuits (without attachment), such as between chips and packaging substrates. Still other applications include attaching a chip to a packaged substrate and forming an interface between the attached chip and the substrate.

In another example embodiment, a molded carbon nanotube composite is used over and/or encapsulating integrated circuit chips on a packaging substrate. Typically an integrated circuit chip is disposed on a package substrate, and circuitry connects the chip to the package for communicating signals (ie, inputs and outputs) therebetween. The molded carbon nanotube composite is formed over the integrated circuit chip and connecting circuitry (eg, bond wires, solder balls, and/or lead frame) and electrically insulates the chip from any connectors. The carbon nanotubes in the molding material facilitate the transfer of heat away from the integrated circuit chip and/or the packaging substrate to which it is mounted.

In another example embodiment, an integrated circuit package interface material includes carbon nanotube fillers. Interface materials are suitable for filling the gap between an integrated circuit chip and a packaging substrate when they are bonded together. In some applications, the interface material fills the area around the circuit connections between the integrated circuit chip and the packaging substrate, such as around solder bumps implemented for flip-chip type applications. Carbon-nanotube-type materials are realized to conduct heat generated by integrated circuit chips (or chips) implemented with the materials.

In one application, the interface material is an underfill configured to deform between the integrated circuit chip and the packaging substrate. Carbon nanotubes are mixed throughout the underfill, chosen for plastic deformation properties that facilitate filling the voids around circuit connectors between the chip and package. For example, underfill can be achieved using materials previously used in underfill applications. The nanotubes and underfill plastically deform into the void and facilitate the transfer of heat away from the circuit connector and, depending on the configuration, away from the chip and/or package.

In another example embodiment, carbon nanotubes are used to support or stiffen the substrate-type materials discussed above for integrated circuit chips. The carbon nanotube hardened material is configured to secure the integrated circuit chip to the packaging substrate, such as by forming a secure interface between the integrated circuit chip and the packaging substrate or by encapsulating the packaging substrate.

In some applications, the carbon nanotube hardened material provides sufficient support to maintain the configuration between the integrated circuit chip and the packaging substrate. For example, the carbon nanotube hardened material can be configured to provide most of the physical support for holding the integrated circuit chip in place relative to the packaging substrate. In other applications, carbon nanotube hardened materials provide more than 75 percent of the physical support for holding integrated circuit chips in place. In these applications, physical support can be related to the carbon nanotube hardened material's ability to hold the integrated circuit chip bonded to the package substrate (ie, without the material, the chip would move relative to the package under slight pressure).

In another example embodiment, a molding type material employing carbon nanotube fillers is selectively disposed near heat generating elements such as circuits, circuit components, integrated circuit chips, and connecting circuits. In general, molding-type materials can be implemented as one or more of packaging molding compounds, underfills, and die attach materials. The molded material conducts the heat energy generated by the heat generating element. Molding-type materials are implemented at the time of packaging for circuit substrates to encapsulate chips or fill gaps between circuit components, such as by using the substrate itself and/or by using other parts of the package, such as by combining circuit package components in materials together. In some applications, the molding material is configured to conduct heat away from a particular circuit. In other applications, molding-type materials are configured to generally uniformly dissipate heat in a particular layer or substrate.

Various types of carbon nanotube materials can be used in the various applications discussed above, and in particular applications mixed with other materials to suit selected needs. For example, for different applications, carbon nanotube dust, multi-walled carbon nanotubes and single-walled carbon nanotubes and other carbon nanotube-based materials are used. These carbon nanotube materials are generally smaller, ie, smaller than silica or other common fillers.

In addition, the type of carbon nanotube material can be selected to meet specific application needs, such as hardness, strength, thermal conductivity, electrical conductivity (or lack thereof), and the ability to mix the material with other materials, such as epoxies or resins. For example, when carbon nanotube materials are mixed into materials that require plastic deformation, such as in underfill applications, the size of the carbon nanotube material is expected to be small enough to facilitate plastic deformation. In this regard, small-sized carbon nanotube dust is easily mixed in the underfill type material. Accordingly, carbon nanotube materials are mixed into material types that can achieve various properties such as strength, durability, and flammability.

In various support and/or heat dissipation embodiments, the carbon nanotubes are oriented in specific directions to facilitate specific support or heat dissipation needs. In some applications, the carbon nanotube material is mixed randomly and uniformly throughout a molding compound type material such as epoxy or plastic. In other applications, carbon nanotubes are configured in specific orientations to achieve specific stiffness and/or strength required for support applications.

Turning now to the drawings, FIG. 1A illustrates a cross-sectional view of a substrate-type material 100 employing carbon nanotube fillers, according to another exemplary embodiment of the present invention. Carbon nanotube fillers are shown as small circles in substrate-type material 100 , labeled 110 for a representative filler. Although shown as circular by way of example, the filler can be realized with various types of carbon nanotube materials, such as dust, single-walled carbon nanotubes, and/or multi-walled carbon nanotubes. Also, the configuration shown is an example manner, and various configuration methods and placement of carbon nanotube fillers can be applied to this example embodiment. In this regard, the shapes and configurations of nanotube fillers shown in Figure 1A, and Figure IB, as discussed below, are by way of example, including a variety of shapes and configurations.

Figure IB illustrates a substrate-type material 120 employing carbon nanotubes and silica fillers, according to another example embodiment of the present invention. Substrate-type material 120 is similar to material 100 in FIG. 1A , including silica filler in addition to carbon nanotube filler. Similar to that shown in FIG. 1A , small clear circles are used to show example representations of carbon nanotube fillers, labeled 130 for a representative carbon nanotube filler. A small hatched circle is used to show an exemplary representation of silica filler, labeled 132 for the silica filler.

Substrate-type material 100 in FIG. 1A and substrate-type material 120 in FIG. 1B can be implemented in various applications, such as package molding compound, die attach material, and underfill. In this regard, materials 100 and 120 may be implemented using various examples described herein and discussed in the figures below.

The concentrations of carbon nanotube fillers 130 and/or silica fillers 132 in substrate-type materials 100 and 120 shown in FIGS. 1A and 1B , respectively, are selected to satisfy various conditions. For example, for applications where high heat transfer and tolerable electrical conductivity are required, the concentration of carbon nanotube fillers is relatively high. In applications where the substrate-type material cannot be conductive (eg, underfill applications), the concentration of nanotube filler is kept low enough to prevent conductivity. General information on filler applications, and specific information on conductivity versus filler concentration, achievable in relation to this and/or other example embodiments discussed herein can be found in Patrick Collins and John Hagerstrom, "Creating High Performance Conductive Composites with Carbon Nanotubes", which is hereby incorporated by reference in its entirety.

In one implementation, electrical conductivity is prevented by constructing carbon nanotube fillers (110 in Figure 1A, 130 in Figure IB) at sufficiently low concentrations. This carbon nanotube filler concentration is controlled relative to the composition of the substrate-type material, in the example of FIG. 1B relative to silica (or other) filler. For example, higher concentrations of carbon nanotube material can be achieved while maintaining the bulk substrate material in a substantially non-conductive configuration when the substrate-type material is substantially electrically insulating.

The concentration of carbon nanotube material can be achieved independently or relative to other fillers such as silica. For example, in some applications, the concentration of carbon nanotube filler is selected relative to silica filler (eg, less carbon nanotube filler means more silica filler) to maintain a specific amount of combined filler. Increasing or decreasing the carbon nanotube filler concentration relative to the silica filler, correspondingly increases or decreases the electrical conductivity of the substrate-type material in which the filler is implemented.

The materials (surrounding filler) used as substrate-type material 100 or 120, respectively, in FIGS. 1A and 1B are selected to meet the needs of a particular application. For example, when a substrate-type material is required to support an integrated circuit chip, such as by securing the chip to a package, the material may be selected so as to obtain adhesive-type properties. When plastic deformation is required for substrate-type materials, the material is selected so as to obtain plastic deformation properties. For applications that benefit from a strong bond, epoxy-type materials are available. In applications that would benefit from a weaker connection or a soft attachment, low temperature thermoplastics may be used.

FIG. 2 illustrates a flip-chip device 200 employing carbon nanotube fillers, according to another example embodiment of the present invention. The flip chip device 200 includes an integrated circuit chip 220 (flip chip) that is turned upside down or flipped, with the circuit side down on a packaging substrate 210 . This method, compared with the traditional orientation chip where the circuit faces upward, causes the circuit in the flip chip 220 to be closer to the packaging substrate 210, reduces the length of the connecting circuit, and accordingly, is conducive to improving the operating speed of the device 200 .

The means of connecting the flip chip 220 to the packaging substrate 210 is a series of connectors including typically conventional solder ball connectors at opposite ends of the flip chip 220, labeled 230 and 232, respectively. Underfill 240 is located between flip chip 220 and package substrate 210 , filling the voids around the connectors including those labeled 230 and 232 .

Underfill 240 helps to seal the connection between flip chip 220 and packaging substrate 210, and also helps to seal any circuit interfaces on the flip chip (eg, pads) and the packaging substrate itself. In this regard, underfill 240 is not conductive to the extent that it prevents conduction between the conductive circuits between flip chip 220 and package substrate 210 .

The carbon nanotube filler in underfill 240 is implemented in a specific concentration, using a material such as epoxy, in such a way as to keep the underfill in a substantially non-conductive state. Mix carbon nanotube fillers as shown in Figures 1A and/or 1B. In this way, the carbon nanotube filler enhances the thermal conductivity of the underfill 240 while maintaining the substantially non-conductive nature of the underfill.

In one implementation, the connector (including solder balls 230 and 232 ) is coated with, or otherwise configured with, an electrically insulating material, such as an oxide, that separates and electrically insulates the connector from underfill 240 . As such, the carbon nanotube material in underfill 240 is less likely to conduct electricity from insulated circuit components. In some examples, the insulating material is sufficient to insulate the circuit from the underfill such that the underfill is implemented with a relatively high concentration of carbon nanotube material that makes the underfill conductive.

In another implementation, underfill 240 is adapted to support circuit connectors, including typical conventional solder ball connectors 230 and 232 . Structural support through underfill 240 (using carbon nanotube fillers) resists stress on the circuit connectors, helping to prevent material fracture and other damage. For example, when the coefficients of thermal expansion of flip chip 220 and package substrate 210 are different, stress may be placed on the circuit connectors as the operating temperature of flip chip device 200 varies. At high operating temperatures, without the support of the underfill, thermal stress can cause circuit connectors to fracture. In this regard, underfill 240 is reinforced with carbon nanotube fillers to mitigate (eg, resist or prevent) thermally induced stress cracking.

FIG. 3 illustrates an integrated circuit device 300 employing a carbon nanotube filled molding compound, according to another example embodiment of the present invention. The device 300 includes a BGA type substrate 350 employing an integrated circuit chip 340 disposed on the substrate. The BGA type substrate is configured 360 to be in turn connected to external circuitry using a series of solder ball connectors 390 . With the carbon nanotube filler, the mold compound 330 secures the integrated circuit chip 340 to the BGA type substrate 350, facilitating subsequent heat transfer from the integrated circuit chip, substrate, and electrical connections. The mold compound further seals and/or protects the electrical connection between the integrated circuit chip 340 and the BGA type substrate 350 with typical connectors 380 and 382 shown by way of example.

In device 300, optional carbon nanotube-filled interface materials are added at selected interfaces. Interface regions 372 (between the integrated circuit chip and the mold compound 330), 374 (between the integrated circuit chip and the BGA type substrate 350) and 376 (between the BGA type substrate and the external circuitry) are shown by way of example. configuration between 360). These interface materials are beneficial for dissipating heat inside the interface material and for conducting heat away from the device 300 . For device 300, other interface-type applications may optionally be implemented in association with or separate from regions 372, 374, and 376, such as the underfill method provided in FIG. 1 . For example, the area 376 between the BGA type substrate and the external circuit arrangement 360 can implement an underfill type approach, filling the voids around the series of solder ball connectors 390 .

The carbon nanotube filled interface material at region 374 is optionally implemented as a die attach compound, which interface material physically secures the integrated circuit chip 340 (die) to the BGA type substrate 350 . Thus, the material structure with carbon-nanotube fillers used at region 374 hardens and connects to both the integrated circuit chip 340 and the BGA type substrate 350 .

The composition and configuration of the carbon nanotube filler in molding compound 330 is selected to meet various application requirements. To meet these needs, carbon nanotube fillers may be mixed in the molding compound 330 and/or combined with other fillers, as shown in FIGS. 1A and/or 1B. In one implementation, the concentration of carbon nanotube filler in molding compound 330 is sufficient to enhance electrical conductivity in the molding compound. Portions of the molding compound 330 adjacent to the conductive circuitry are insulated. The relatively high concentration of carbon nanotube filler required to make the mold compound electrically conductive also facilitates thermal conductivity, which in turn removes heat from the device 300 .

In one application, the carbon nanotube filler concentration of the molding compound 330 is high enough to promote electrical conductivity in the molding compound by means of a "transmission line effect" (e.g., like typically transmission line effects associated with coaxial cables). Such sufficiently high concentrations are application specific, such as the thickness of the molding compound, the strength of any relevant electric fields and proximity to the circuit. An electric field is generated relative to conductive molding compound 330 and used in integrated circuit chip 340 for various purposes. For example, the current passing through the molding compound 330 causes an interaction with the current in the integrated circuit chip 340 according to current characteristics such as the amount of current passed, the location of the carbon nanotube filler, and the frequency of the current. Thus, these properties are chosen to meet the desired interaction for each particular application, eg, such that the generated electric field causes a characteristic response in adjacent circuits.

The "bulk material" (the material holding the carbon nanotube filler) of the molding compound 330 is selected to meet application requirements, such as those related to electrical or thermal conductivity, as well as those related to strength, durability, and flammability physical needs. Materials such as epoxy, biphenyl, and other plastics are examples for a variety of applications. In various applications, the production-related bulk material properties of the carbon nanotube filler are selected to address challenges such as bond line deformation (bending ("sweep")) and others associated with the stresses to which the device 300 is exposed. For example, the size of the carbon nanotube filler is generally kept small to facilitate plastic deformation of the molding compound 330 around circuit connectors, such as connectors 380 and 382 .

In another exemplary embodiment of the present invention, the molding compound is realized with a composite material having a carbon nanotube filler concentration that is inherently ESD (electrostatic discharge) protected. Using FIG. 3 as an example, integrated circuit chip 340 is encapsulated by an insulating compound with molding compound 330 and/or coated with carbon nanotube-containing plastic. The molding compound (and carbon nanotube coating, if applied) is substantially devoid of magnetic powder, which minimizes polarity-induced interactions when the coating is applied. The mold compound (or carbon nanotube coating) facilitates relatively little current leakage when the device 300 is in operation. The method is applicable to a variety of devices, the description herein in conjunction with FIG. 3 is a specific example. Using this approach, other applications including those configured in FIGS. 1A and 1B can be readily implemented.

The various embodiments described above and shown in the drawings are provided by way of illustration only and should not be considered as limiting the present invention. Based on the above discussion and illustrations, those skilled in the art will readily recognize that various modifications and changes can be made to the present invention without strictly following the exemplary embodiments and applications illustrated and described herein. For example, carbon nanotubes may be realized using or in addition to other materials than carbon, such as boron. According to another example, fillers with properties similar to those of carbon nanotubes (eg, thermal conductivity close to 3000 W/mK, coefficient of thermal expansion about 0.25 ppm) may be used instead or additionally as carbon nanotube fillers. Furthermore, the substrate-type materials discussed by way of example may be implemented with many different types of materials, alone and/or in combination with another material or in combination with the aforementioned materials. Such alterations and changes do not depart from the spirit and scope of the invention.

Claims (33)

1. An integrated circuit chip configuration (200), comprising: an integrated circuit chip (220); a support substrate (210) configured to physically support the integrated circuit chip; and an interface region (240) comprising carbon nanotube material, the The interface region is positioned and configured to facilitate structural support of the integrated circuit chip in a configuration employing a support substrate. 2. The arrangement of claim 1, wherein the interface region is a molding compound substantially encapsulating the integrated circuit chip on the support substrate. 3. The arrangement of claim 2, wherein the interface region is arranged and configured to substantially connect the integrated circuit chip to the supporting substrate. 4. The arrangement of claim 1, wherein the interface region is an underfill provided and configured to form an interface between and contact the integrated circuit chip and the supporting substrate. 5. The arrangement according to claim 4, wherein the integrated circuit chip and the supporting substrate are physically and electrically connected through a conductive interface material, and wherein the underfill is disposed adjacent to the conductive interface material and is arranged and configured to conduct heat The absence of a conductive interface material facilitates structural support of the integrated circuit chip in its configuration using a support substrate. 6. The arrangement of claim 5, wherein the underfill is provided and configured to fill a void between the conductive interface material, the integrated circuit chip, and the supporting substrate. 7. The arrangement of claim 6, wherein the underfill is arranged and configured to deform into the void between the conductive interface material, the integrated circuit chip and the supporting substrate. 8. The arrangement of claim 5, wherein the underfill is provided and configured to prevent conduction between different portions of the conductive interface material. 9. The arrangement of claim 4, wherein the underfill is provided and configured to provide structural support to the circuit connectors between the integrated circuit chip and the supporting substrate to mitigate fracture of the circuit connectors in applications involving thermally related stresses . 10. The arrangement of claim 1, wherein the interface region is a connecting material that substantially connects the integrated circuit chip to the supporting substrate. 11. The arrangement of claim 10, wherein the interface region comprises a layer of conductive material between the integrated circuit chip and the support substrate. 12. The arrangement of claim 11, wherein the layer of conductive material comprises a plurality of carbon nanotube structures arranged and configured for conducting electricity between the integrated circuit chip and the supporting substrate. 13. The arrangement of claim 10, further comprising: at least one circuit extending across at least a portion of the interface region; and The insulating material is arranged and configured to insulate the carbon nanotubes in the interface region from the at least one electrical circuit. 14. The arrangement of claim 1, wherein the concentration of the carbon nanotube filler in the interface material is graded, the concentration near the circuit in the integrated circuit chip arrangement is lower to prevent conduction between the nanotube filler and the circuit, at a location away from the circuit The concentration is higher to facilitate thermal conduction of heat away from the circuit. 15. The arrangement of claim 1, wherein the interface material has sufficient carbon nanotube material to conduct electricity, and wherein the carbon nanotube material is further arranged and configured to cause a transmission line effect in the integrated circuit chip. 16. An integrated circuit chip arrangement (300), comprising: a support substrate (350); an integrated circuit chip (340) connected to the support substrate; and a molding compound over the integrated circuit chip and at least a portion of the substrate The material (330), the molding compound material includes a carbon nanotube material that facilitates structural support for the integrated circuit chip in a configuration employing a supporting substrate. 17. The arrangement of claim 16, wherein the molding compound includes a carbon nanotube filler mixed in the molding substrate. 18. The arrangement of claim 17, wherein the carbon nanotube filler is carbon nanotube dust. 19. The arrangement of claim 17, wherein, together with the molding substrate, the carbon nanotube filler has a substantially non-conductive concentration in the molding substrate. 20. The arrangement of claim 19, wherein the molding compound is configured to prevent conduction of the integrated circuit chip and electrical connections thereto. 21. The arrangement of claim 16, wherein the mold compound has a relatively low concentration of carbon nanotube material in a non-conductive region of the mold compound proximate to the conductive portion of the integrated circuit chip, and the The conductive regions of the mold compound separating the conductive portions of the integrated circuit chip have a relatively high concentration of carbon nanotube material. 22. The arrangement according to claim 16, wherein the molding compound comprises a filler mixed in the molding compound, the filler comprising silica and carbon nanotube filler, the ratio of carbon nanotube to silica filler being lower than that of the mold The threshold ratio at which the plastic compound will conduct electricity. 23. The arrangement of claim 16, further comprising: the electrically insulating material configured to electrically insulate the electrical conductors of the integrated circuit chip from the molding compound material; and, wherein the concentration of the carbon nanotube material in the molding compound is sufficient to The mold compound conducts electricity and leads to transmission line effects for integrated circuit chips. 24. An integrated circuit chip arrangement (200), comprising: a support substrate (210); an integrated circuit chip ( 220); and an underfill (240) between the integrated circuit chip and the substrate, the underfill comprising a carbon nanotube material that facilitates a structural relationship between the integrated circuit chip in a configuration employing a supporting substrate by supporting electrical conductors. 25. The arrangement of claim 24, wherein the underfill is adapted to plastically deform around the electrical conductor. 26. The arrangement of claim 25, wherein the underfill is adapted to fill voids between the integrated circuit chip and the supporting substrate and around the electrical conductors. 27. The arrangement of claim 24, wherein the carbon nanotube material is mixed in the underfill in a concentration and configuration that prevents electrical conduction between the electrical connector and the carbon nanotube material. 28. The arrangement of claim 24, wherein the integrated circuit chip and the support substrate are configured in a flip-chip packaging configuration, the circuit side of the integrated circuit chip configured to face down on the support substrate and electrically connected therebetween. connect. 29. An integrated circuit chip configuration comprising: a supporting substrate; an integrated circuit chip connected to the supporting substrate; and a bonding material between the integrated circuit chip and the substrate, the bonding composite material comprising carbon nanotube material and using The configuration of the support substrate facilitates the attachment of integrated circuit chips. 30. The arrangement of claim 29, wherein the bonding material comprises a plastic-type material arranged and configured to retain the carbon nanotube material. 31. The arrangement of claim 29, wherein the concentration of carbon nanotube material is sufficient to render the bonding material electrically conductive. 32. The arrangement of claim 29, wherein the concentration of carbon nanotube material is low enough to prevent electrical conduction with the integrated circuit chip. 33. The arrangement of claim 29, wherein the carbon nanotube material is arranged in the bonding material to facilitate conduction of heat away from at least one of the integrated circuit chip and the supporting substrate.

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