CN101128083B - Plasma generation device, plasma control method, and substrate manufacturing method - Google Patents
Plasma generation device, plasma control method, and substrate manufacturing method Download PDFInfo
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Abstract
本发明的目的在于提供一种可在空间均匀生成高密度等离子体的等离子体生成装置，在真空容器(11)的侧壁设置多个天线(16)，相对3-4个天线(16)，经板状导体(19)并联连接1个高频电源。各天线(16)的导体长度比在真空容器内生成的感应电磁波的波长之1/4还短。通过如此设定天线导体的长度，可防止产生驻波，由此可防止损害真空容器的等离子体之均匀性。另外，因为通过使用板状导体(19)可高效放热，所以可抑制阻抗的上升。
The purpose of the present invention is to provide a plasma generation device that can uniformly generate high-density plasma in space, a plurality of antennas (16) are arranged on the side wall of the vacuum container (11), and relative to 3-4 antennas (16), A high-frequency power supply is connected in parallel via the plate conductor (19). The conductor length of each antenna (16) is shorter than 1/4 of the wavelength of the induced electromagnetic wave generated in the vacuum container. By setting the length of the antenna conductor in this way, generation of standing waves can be prevented, thereby preventing damage to the uniformity of plasma in the vacuum vessel. In addition, since heat can be efficiently dissipated by using the plate-shaped conductor (19), an increase in impedance can be suppressed.
Description
The application is that application number is 2003801061178, the applying date is dividing an application of December 12, denomination of invention in 2003 application for a patent for invention that is plasma generating equipment, plasma control method and manufacture of substrates.
Technical field
The present invention relates to a kind of plasma generating equipment, be used to use plasma, processing or etch processes are piled up in the surface that is processed substrate and make substrates such as semiconductor.Especially relate to a kind of through making plasma in large tracts of land, evenly produce, make the technology of large-area substrates.
Background technology
In recent years, can show that more multi-crystal TFT-the LCD of high-brghtness picture images is noticeable than TFT (the thin-film transistor)-LCD that uses amorphous silicon film.Multi-crystal TFT-LCD at first is manufactured on the polycrystalline silicon substrate that is formed with polysilicon membrane on the glass substrate.This polycrystalline silicon substrate is distinguished into the pixel area of a plurality of two-dimensional arrangements, in each pixel area, forms thin-film transistor (TFT), constitute LCD and use substrate.In order to make large-area multi-crystal TFT-LCD, need have high-quality, the polycrystalline silicon substrate of high flatness particularly.
Polycrystalline silicon substrate is also noticeable as high efficiency substrate for solar cell, and the expansion along with demand and application requires its large tracts of landization.In addition, even if with regard to general semiconductor device substrate, the large-scale semiconductor device substrate that surpasses the monocrystalline size also must use piles up the substrate that forms.
In order to be manufactured on the substrate that uses in these fields, carry out the processing of using plasma.In the processing of using plasma, comprise the raw material that makes substrate be piled up in constitute substrate be processed processing that processing and etching on the substrate surface be processed substrate surface etc.Along with the maximization of substrate, the device of carrying out Cement Composite Treated by Plasma also needs to maximize, but greatest problem at this moment is the inhomogeneities of Cement Composite Treated by Plasma.In order to eliminate this problem, need make plasma density in the whole base plate surface, become even as far as possible.On the other hand, see, require to improve plasma density, improve stackeding speed or etch-rate thus from productive viewpoint.
In the method that generates plasma, ECR (electron cyclotron resonance) plasma mode, microwave plasma mode, induction coupled mode plasma mode, capacitive coupling plasma mode etc. are arranged.Wherein, induction coupled mode plasma mode applies high frequency voltage to the induction coil that constitutes antenna, and at the inner generation of plasma generating equipment induction field, and generate plasma thus.Constitute according to this, can generate high-density plasma as one of important document that requires said plasma device.On the other hand, because plasma density depends on the distance apart from antenna, so with regard to regard to the uniformity of the said plasma density of an important document again, formations such as shape through making antenna or position realize improving.For example, open in the 2000-58297 communique (below be made as ' patent documentation 1 '), put down in writing from being arranged on the tabular coil that plasma generates the courtyard outside of chamber and imported high frequency, make the uniformity raising of plasma density the spy.
With regard to this formation, if realize the large tracts of landization of substrate, then generate the mechanical strength of chamber courtyard in order to ensure plasma, must make the wall of courtyard enough thick.But, in the device of patent documentation 1,,, wall decays from the induction field of antenna radiation so making owing to the outside configuration antenna that generates the chamber at plasma, be difficult to fully obtain the intensity that plasma generates indoor induction field.That is, in patent documentation 1, in the method for record,, be difficult to fully improve plasma density although with regard to the uniformity of plasma density, see certain raising.
On the contrary, the application inventor opens in the 2001-35697 communique (' patent documentation 2 ') the spy, proposes that high frequency antenna is arranged on plasma generates chamber interior, and a plurality of antennas are set, and the antenna that uses non-helical shaped.
Constitute according to this, do not constitute obstacle, generated indoorly, can fully improve plasma density so induction field emits to plasma unattenuatedly because plasma generates the wall of chamber.In addition, because radiate induction fields,, thus, the uniformity of plasma density is improved so its uniformity improves from a plurality of antennas of equivalent arrangements.Moreover though inside antenna is easy to generate paradoxical discharge when applying big voltage, through a plurality of antennas are set, the impedance of each antenna diminishes, and can not produce paradoxical discharge.Use the antenna of non-helical shaped also can help to reduce the impedance of antenna, suppress paradoxical discharge.Through these effects, can carry out accumulation processing or etch processes to the large-area substrate that is processed.Below, the formation of putting down in writing in the patent documentation 2 that a plurality of antennas are set is called ' many antennas mode '.
In order to handle more large-area substrate, require when fully guaranteeing plasma density intensity, to generate the higher plasmoid of uniformity from now on.For this reason, even if said many antennas mode also need be studied the relation between the shape, position of each antenna etc. or antenna etc., the current parameter of not considering.In addition, if form, then damage the uniformity of plasma thus from the standing wave of the induction field of antenna radiation.And, because the intensity of induction field depends on the distance apart from high frequency antenna, so even if use many antennas mode, near the plasma density the substrate center is near than the substrate outer edge low also.Under the little situation of substrate area, near the difference of the plasma density that near the substrate center and substrate outer edge is is in allowed band, but big if substrate area becomes, then this difference can not be ignored.In addition, etching or stackeding speed etc. are different because of the difference of ion species or free radical kind, so the ion species that also need consider to generate or the kind of free radical kind.
Summary of the invention
The present invention makes in order to address this is that, and its purpose is to provide a kind of plasma generating equipment that can spatially evenly generate the kind of high-density plasma, the ion species that can suppress to generate or free radical kind.
The present invention's who constitutes in order to address the above problem plasma generating equipment is characterised in that: possess
A) vacuum tank;
B) the substrate platform that be arranged in the said vacuum tank, loading is processed substrate; With
C) in said vacuum tank, be arranged in a plurality of high frequency antennas on the said substrate platform almost parallel.
In addition, plasma generating equipment of the present invention is except that above-mentioned formation, and also arbitrary or a plurality of formation in following (1)-(5) is had both in expectation.
(1) said antenna is made up of the conductor also shorter than 1/4 wavelength length of said high frequency.
(2) has the tabular conductor that is connected in parallel on said a plurality of antenna.In addition, to the tie point of the power supply of antenna power supply and tabular conductor, also shorter than 1/4 wavelength length of high frequency with the distance of each antenna and the tie point of tabular conductor.
(3) will set value for corresponding to the aspect ratio of the antenna of the position in the purpose zone of said substrate platform corresponding to purpose plasma density in this purpose zone or plasma electron energy.Here, so-called ' aspect ratio ' is meant with the direction length that is parallel to inwall divided by the value of antenna after perpendicular to the direction length of inwall.
(4) be roughly parallel to the be arranged side by side electrode of antenna of said substrate platform, 1 group or many groups are same polarity in abutting connection with the adjacent electrode of antenna each other.
(5) on said antenna, connect impedance component, expect that this impedor impedance is variable.
The basic comprising of plasma generating equipment of the present invention at first, is described.Plasma generating equipment of the present invention has its inner vacuum tank that constitutes plasma generation chamber.Vacuum tank inside maintains the specified vacuum degree by vacuum pump.Load the substrate platform that is processed substrate in this vacuum tank set inside.
A plurality of high frequency antennas are set in vacuum tank.An electrode of these antenna is connected on the power supply of other setting another electrode grounding.This antenna for example can be assemblied on sidewall or day borehole wall of vacuum tank etc.In addition, be roughly parallel to the substrate tableland and arrange these a plurality of antennas.
If to these antenna high frequency power is provided, then, generate plasma thus from each antenna radiation induction field from power supply.At this moment, arrange antenna because in device of the present invention, be roughly parallel to the substrate tableland, thus each day line-spacing substrate platform height about equally, in the space, concentrate the energy that drops into from antenna, so can generate high-density plasma.
In addition,, drop into energy,, can generate more highdensity plasma so compare with the situation of the antenna that uses three-dimensional shape from antenna in plane regional centralized through using plane antenna.
If in vacuum tank, then antenna surface is exposed to the plasma of generation with the conductor arrangement of antenna, conductor worsens.In order to prevent the generation of this situation, expectation comes the cover antenna surface with insulator.The Electrostatic Coupling of the conductor and the plasma of suppressing antenna is gone back in this covering, thus, also has paradoxical discharge or the disorderly effect of plasma of preventing.This covers by write up in above-mentioned patent documentation 2.
Below, the plasma generating equipment of the formation with above-mentioned (1) is described.In this device, make the conductor length that constitutes antenna also shorter than 1/4 wavelength length of the high frequency power that provides.Conductor is not limited to wire, even if for example be tabular, as long as the length of direction of current flow is also lacked than 1/4 of high frequency wavelength.Through constituting this formation, can prevent to produce standing wave, thereby can prevent to damage the uniformity of the plasma in the vacuum tank at conductive surface.
Below, the plasma generating equipment of the formation with above-mentioned (2) is described.In above-mentioned basic comprising, a plurality of antennas are connected in parallel on the tabular conductor.To antenna high frequency power is provided from power supply through this tabular conductor.In order efficiently high frequency power to be provided, the impedance of the connecting portion between power supply and antenna is diminished to antenna.In connecting, use tabular conductor, fully widen the width of this tabular conductor, can the impedance of this connecting portion suppressed little at this.In addition, if the conductor temperature of connecting portion rises because of power supply, then resistance increases, but through using tabular conductor, efficiently heat release is so can suppress the rising of impedance.
In addition; In the formation of (2); If between the tie point of the power supply of antenna power supply and tabular conductor, two tie points, producing standing wave with the tie point of each antenna and tabular conductor; Then, restricted the size of putting into the high frequency power on the tabular conductor at the tie point place of power supply and tabular conductor through this standing wave.Therefore,, prevent in tabular conductor, to produce standing wave, can drop into the high frequency power of regulation through making the distance between two tie points also shorter than 1/4 wavelength length of high frequency.In addition, expectation makes between length and said two tie points of antenna conductor also shorter than 1/4 wavelength length of high frequency power apart from sum.
Below, the plasma generating equipment of the formation with above-mentioned (3) is described.In this constitutes, the aspect ratio of the antenna of not considering before being conceived to.The application inventor finds that the plasma electron energy or the plasma density in this antenna direction zone (be positioned at from antenna department of assembly perpendicular to the zone on the direction of inwall) depend on aspect ratio.For example, be added under the constant situation of high frequency voltage on the antenna at facility, aspect ratio is big more, and then the plasma electron energy in this antenna direction zone is high more.It the reasons are as follows.If increase aspect ratio, it is big that the induction field that then on the antenna direction direction, produces becomes.Quicken soon to assigned direction because of this potential difference makes near the plasma electron that antenna, generates, uprise so be positioned at the plasma electron energy in the zone on this direction.
Impact different and different because of plasma electron energy size of ion species that the back generates or free radical kind with plasma electron in this zone.In addition, etch-rate etc. is different because of the difference of ion species or free radical kind.Therefore, the aspect ratio of the antenna in the zone (purpose zone) through will pointing to control etch-rate etc. is set various values for, and the energy of scalable plasma electron is controlled at the ion species or the free radical kind that generate in the purpose zone, control etch-rate wherein etc.
In the device of formation, can the whole electron temperature in the vacuum tank be remained on the control that low state is carried out electron energy unchangeably with above-mentioned (3).Therefore, the current potential of crust (sheath) part that is helpless to etching or accumulation is risen, only control the electron energy in purpose zone.
In addition, through increasing aspect ratio, plasma electron that is accelerated and the residual molecular raw material gas impact not by plasmaization further promote the generation of plasma.Thus, can improve the plasma density in purpose zone.
In addition; Aspect ratio in plane antennas such as rectangle or circle as stated by defining divided by the value of antenna after perpendicular to the direction length of inwall with the direction length that is parallel to inwall; But in having the antenna of three-dimensional shape, by with the direction length that is parallel to inwall divided by to the face projection that is parallel to the substrate platform, define perpendicular to the value after the direction length of inwall.
Below, for the device of the formation with (3), the description control plasma electrically is in the instance of energy or plasma density.Set the aspect ratio of specifying this regional antenna corresponding to purpose values such as plasma electron energy in the purpose zone or plasma densitys.For example, in improving vacuum tank, under the situation of whole plasma density, need only the aspect ratio that increases whole antennas.In addition, in improving vacuum tank, under the situation of the plasma electron energy of regional area or plasma density, make the aspect ratio of the antenna that points to the purpose zone bigger than the aspect ratio of other antenna.In addition, not only can adjust an antenna, also can adjust the aspect ratio of a plurality of antennas.In addition, in order to reduce the plasma electron energy or the plasma density of regional area in the vacuum tank, also can make the aspect ratio of pointing to this regional antenna littler than the aspect ratio of other antenna.Thus, can the higher degree of freedom control plasma electron energy or plasma density.
Improving the preferred example of the plasma density of regional area in the vacuum tank, is the method that is used to improve the plasma density of the device ionic medium volume density of the existing many antennas mode substrate platform central authorities near zone lower than the outer edge.Through making the aspect ratio of pointing near the antenna of central authorities bigger, can improve the uniformity that plasma generates the whole ionic medium volume density in chamber than the aspect ratio of other antenna.Like this, the plasma that has improved density uniformity through use to carry out accumulation processing or etch processes to being processed substrate, can be manufactured on the high substrate of uniformity in the large tracts of land.
The method of the plasma density of regional area in the so-called control vacuum tank; For example can be used for producing the substrate of uneven part, control the plasma density of this part and revise, make stackeding speed or the condition of different of etching speed and other part not knowing what reason.
Below, the plasma generating equipment of the formation with above-mentioned (4) is described.With above-mentioned the same, when in vacuum tank, a plurality of antenna being set, be roughly parallel to the be arranged side by side electrode of antenna of substrate platform, be made as same polarity each other in abutting connection with the adjacent electrode of antenna.That is, all be connected in adjacent electrode on the high frequency electric source or ground connection all.
For example, be provided with a plurality ofly high frequency electric source is connected on the electrode, with the antenna of another electrode grounding, connect under the parallel unchangeably mobile situation to comprise these, different in abutting connection with the polarity between the adjacent electrode of antenna.On the contrary, a plurality of antennas are set so that antenna self parallelly moves, high frequency electric source and ground connection be connected with the situation opposite in abutting connection with antenna under, become identical polar each other in abutting connection with the adjacent electrode of antenna.
If the polarity in abutting connection with the adjacent electrode of antenna is different, then when in order to generate induction field when each antenna applies high frequency voltage, by mistake between adjacent electrode, apply high frequency voltage, only this part local plasma density uprises.The plasma density step-down at the position beyond therefore, for example between substrate platform central portion etc., this adjacent electrode.On the contrary,, be identical polar each other, so when each antenna applies high frequency voltage, yet equal potentials always between this adjacent electrode does not apply high frequency voltage because establish in abutting connection with the adjacent electrode of antenna according to the formation of above-mentioned (4).Therefore, between this adjacent electrode, can not form local high beta plasma density area, the homogenizing plasma density.In addition,, the density that is provided with of antenna is uprised with worsening, plasma density is uprised so can be used as integral body because the uniformity of plasma density is narrowed down in abutting connection with the distance between antenna.Moreover, make the identical electrode of polarity, the distribution of may command plasma density through suitable selection.
Below, the plasma generating equipment of the formation with above-mentioned (5) is described.In this constitutes, on each antenna, connect the impedance component that is used to regulate aerial voltage or electric current.When each antenna is connected in high frequency electric source, typically, since the reason on the cost etc., a plurality of antennas that on each high frequency electric source, are connected in parallel, but also can on an antenna, connect a high frequency electric source.
Providing to a plurality of antennas under the situation of high frequency power from a high frequency electric source, high frequency electric source is different with shape or the length or the Temperature Distribution etc. of the conductor of antenna along with connecting, and the high frequency power that offers each antenna is also different to each antenna.In said connection is under the situation of tabular conductor with conductor, and especially Effect on Temperature Distribution becomes significantly.Therefore, in plasma generating equipment of the present invention, through regulating each impedor resistance value, the difference that offers the high frequency power of each antenna diminishes.The uniformity of the plasma density that in vacuum tank, generates thus, improves.
For example, using said tabular conductor that a plurality of antennas are connected in parallel under the situation on the high frequency electric source, because from the exothermic heat on surface, the temperature of tabular conductor is low near than central authorities near the end.Therefore, be connected near the tabular end conductor antenna and the resistance value between high frequency electric source than being connected in little between near the antenna-high frequency electric source of central authorities.Therefore, increase the impedor resistance value that is connected near the antenna of tabular end conductor.Thus, the difference of the resistance value between each antenna-high frequency electric source diminishes, but normalization offers the high frequency power of each antenna.
In addition, under the plasma density of the subregion in vacuum area thereby the situation that rises or descend former,, can make this regional plasma density near other regional value through regulating the resistance value of the impedance component that points to this regional antenna because of certain.This is not limited to a plurality of antennas are connected in parallel in a situation on the high frequency electric source, also applicable to only an antenna being connected in a situation on the high frequency electric source.
Also can only on the part antenna, connect voltage or the electric current that impedance component is regulated this antenna.For example, in the part antenna in a plurality of antennas impedance component ground is not set maximum power is provided all the time, and other antenna is provided with impedance component, and regulate its value, thus the restriction power supply.
In the impedance component on being connected in antenna, can use fixing and variable any of resistance value.The blocked impedance element is for example known the resistance value between each antenna and high frequency electric source in advance, in this value, has under the situation of reproducibility to use.On the other hand, variable impedance element except that above-mentioned situation, also can be used for resistance value between antenna-high frequency electric source and be condition such as condition of unknown, Yin Wendu and condition of different, when the time changes in the situation etc.Through regulate the resistance value of variable impedance element corresponding to various conditions and their variation, the plasma density of generation is become evenly.
The adjusting expectation of the resistance value of this variable impedance element is carried out after keeping watch on the inner plasmoid of vacuum tank and feeding back this state.Thus, can be along with the variations in temperature of tabular conductor comes to change corresponding to the time of plasma density.For this reason, be desirably in also be provided with in the plasma generating equipment of the present invention mensuration can represent plasmoid parameter determination part and set the control part of the resistance value of each variable impedance element according to this parameter.Though determination part is as long as directly measure plasma density, the plasma density that also can come indirect determination to generate through the curtage of measuring easier each antenna.
Determination part for example constitutes as follows.Through near antenna, disposing pick-up winding, be determined at the induced electromotive force of responding in this pick-up winding, can measure the electric current of each antenna easily.In addition,, measure and flow out the electric current that flows into this capacitor, can measure the voltage of each antenna easily through near antenna, disposing capacitor.Through making the end conductor that constitutes antenna be projected into the outside of vacuum tank, can with pick-up winding or capacitor arrangements near its end, be the outside of vacuum tank.Thus, can make pick-up winding or capacitor not corroded the curtage that antenna is measured on ground by plasma.
Because the plasma density that generates is directly proportional with the power that drops into antenna,, expects its both sides of mensuration, promptly drop into the power of antenna so in order more correctly to measure plasma density, one side compares with the curtage of only measuring antenna.For this reason, as long as the signal of the antenna current that will obtain through said method and the signal multiplication of aerial voltage.This multiplication for example can use the signal synthesizer (frequency mixer) that synthesizes both to carry out.Because comprise high fdrequency component in the signal that signal synthesizer obtains, so expectation removes high fdrequency component by low pass filter.The signal that so obtains is directly proportional with the power that drops into antenna.
Even if above-describedly respectively constitute any, also expect many strip antennas are divided into by 1 or a plurality of groups of constituting of a plurality of antenna separately, with regard to each group, to each day line parallel high frequency power is provided.Through being made as this formation, and compare to whole antennas power supplies from a high frequency electric source, further reduce load to high frequency electric source, thus, can improve the plasma density of generation.
In addition; Because can realize than also uniform highdensity plasmoid in the past through above-mentioned each plasma generating equipment that constitutes; So pile up processing or etch processes, the comparable substrate that has an even surface of making efficiently in the past through using this device to carry out.
Description of drawings
Fig. 1 is the sectional view of vertical direction of the 1st embodiment of plasma generating equipment of the present invention.
Fig. 2 is the side view of the plasma generating equipment of the 1st embodiment.
Fig. 3 is the plane graph of the plasma generating equipment of the 1st embodiment.
Fig. 4 is the curve of the plasma generating equipment plasmoid that measure, the vacuum tank central part of expression the 1st embodiment.
Fig. 5 is the figure of the plasma generating equipment of expression the 1st embodiment plasma density distribution that measure, that vacuum tank is interior.
Fig. 6 is the signal pie graph that expression has the plasma generating equipment instance of phase position adjusting function.
The change curve of the plasma density when Fig. 7 is the phase difference variation of representing to make between high frequency electric source.
Fig. 8 is the plane graph of the length of sidewall direction of the expression antenna conductor plasma generating equipment instance different with number of antenna.
Fig. 9 is that expression is because of the different plasma potentials that cause with number of antenna of length of the sidewall direction of antenna conductor and the different curve of amplitude of floating potential.
Figure 10 is the plane graph of the 2nd embodiment of plasma generating equipment of the present invention.
Figure 11 is the ideograph of the different multiple antenna of expression aspect ratio.
Figure 12 is the curve of the central plasma density of the vacuum tank of plasma generating equipment of expression the 2nd embodiment and comparative example.
Figure 13 is the curve of the central Electron energy distribution of the vacuum tank of plasma generating equipment of expression the 2nd embodiment and comparative example.
Figure 14 is the plane graph that expression is made as the aspect ratio of each antenna different plasma generating equipments one example.
Figure 15 is the figure of plasma density distribution of device of plasma generating equipment and the comparative example of expression Figure 14.
Figure 16 is the plane graph of the 3rd embodiment of plasma generating equipment of the present invention.
Figure 17 is the key diagram that in gap between antenna and output therebetween, differs from.
Figure 18 is the curve of the central plasma density of the vacuum tank of plasma generating equipment of expression the 3rd embodiment and comparative example.
Figure 19 is the curve of expression by the plasma density spatial distribution of the plasma generating equipment generation of the 3rd embodiment and comparative example.
Figure 20 is the plane graph of the 4th embodiment of plasma generating equipment of the present invention.
Figure 21 is the figure of expression impedance component one example.
Figure 22 is the sectional view of vertical direction of the plasma generating equipment of the 4th embodiment.
Figure 23 is the figure of expression diode bridge connection circuit one example.
Figure 24 is the curve of expression by the spatial distribution of the plasma density of the generating apparatus generation of the 4th embodiment.
Embodiment
(the 1st embodiment)
Respectively at the sectional view of the vertical direction of the 1st embodiment of plasma generating equipment of the present invention shown in Fig. 1, at Fig. 2 the side view of this device is shown, at the plane graph of this device shown in Fig. 3.
The plasma that the inside of vacuum tank 11 constitutes this plasma generating apparatus generates the chamber.Vacuum tank 11 is inner as shown in Figure 3, and flat shape is rectangle (rectangle), and its long edge lengths is 130mm, and bond length is 100mm.On vacuum tank 11, connect vacuum pump (not shown), with vacuum tank 11 inner sustain at the specified vacuum degree.In vacuum tank 11, be provided for loading be processed substrate 13, long limit is that 94cm, minor face are the substrate platform 14 of the rectangle plane shape of 76cm.Substrate platform 14 is through being arranged on the lifting unit 14a liftable of its underpart.In addition, be provided for deriving the substrate gateway 12 that importing is processed substrate 13 in the following side of vacuum tank 11.
Be provided with along the spiral portion in a week and of inwall level in vacuum tank 11 at vacuum tank 11 internal upper parts by being connected in the gas pipeline 15 that the outside connecting portions of vacuum tank 11 constitute.For the impartial gas that imports in vacuum tank 11, a plurality of holes of configuration suitably distribute on the surface of the portion of spiraling of this gas pipeline 15.In addition, also can replace this gas pipeline 15 of present embodiment, be provided with and run through the vacuum tank sidewall or/and the pipeline of the weak point of day borehole wall in vacuum tank 11 inside turns.At this moment, for the impartial gas that imports in vacuum tank 11, be desirably in sidewall or/and a plurality of pipelines of configuration that suitably distribute on day borehole wall.
In 4 sidewalls of vacuum tank 11, on its horizontal direction, in two faces of a long side 4 high frequency antennas 16 are set respectively equally spaced, in two faces of a short side, 3 high frequency antennas 16 (with reference to Fig. 3) are set respectively equally spaced.Arbitrary antenna 16 all is 180mm apart from the height of substrate platform 14.Of the back, one in two electrodes of each antenna 16 is connected on the high frequency electric source 18, with another ground connection.For example, the ground connection lateral electrode of each antenna is connected on the sidewall of vacuum tank 11, through with this sidewall ground connection, can be with ground connection lateral electrode ground connection.In addition, also can in the electrode of high frequency electric source 18 sides, insert from the swim fixing or variable floating capacitance of (floating) of ground connection.The frequency of the power that provides from high frequency electric source 18 in the present embodiment, is 13.56MHz.
Conductor length is 450mm between the electrode of antenna 16, than put on high frequency wavelength on the antenna 16 (10,000-15,000mm) 1/4 also short.Thus, can not produce standing wave and damage the uniformity of plasma.
The surperficial insulated body that is positioned at the part of vacuum tank 11 in the conductor of antenna 16 covers.In addition, high frequency antenna 16 be shaped as the U font, like this through using the antenna that does not spiral to reduce the impedance of antenna.With regard to antenna that insulated body covered described here and the antenna that do not spiral, in patent documentation 2, specify.
In the present embodiment, be arranged on 3 or 4 antennas on the vacuum tank sidewall being connected in parallel on the high frequency electric source 18.In being connected of each antenna 16 and high frequency electric source 18, as shown in Figure 2, use tabular conductor 19.Lateral wall ground along vacuum tank 11 is provided with this tabular conductor 19, and tabular conductor 19 for example is made up of copper coin.In on the point (high frequency supply terminals 20) that high frequency electric source 18 is connected in copper coin through impedance integrator 17, the electrode (the white circle among Fig. 2) of antenna 16 is connected on the copper coin.In addition, the electrode of the black circle expression ground connection side among Fig. 2.The electrode that is connected in each antenna 16 on the copper coin and the distance of high frequency supply terminals 20 are 1/4 also shorter than what put on high frequency wavelength on the antenna 16.Through widening the width of copper coin, extending should distance.
The action of the plasma generating equipment of present embodiment is described.Make lifting unit 14a action, substrate platform 14 is descended.To be processed substrate 13 and import in the vacuum tanks 11 from substrate gateway 12, on being loaded into substrate platform 14 after, make substrate platform 14 rise to assigned position.In with vacuum tank, reduce pressure behind the authorized pressure, in the unstrpped gas importing gas pipeline 15 of air pressure with regulation, the high frequency power of regulation is provided to each high frequency antenna 16 from 4 high frequency electric sources 18 plasma.Thus, through the induction field that generates respectively from a plurality of high frequency antennas 16, generate plasma.
Below, with experimental result plasma density or the plasma electron energy that the plasma generating equipment of the 1st embodiment generates is described.
The plasma generating equipment of expression the 1st embodiment generates argon (Ar) plasma (under Ar gas flow: 50ccm, air pressure: 0.66Pa and 1.33Pa, measuring respectively) among Fig. 4, and with the result of the plasmoid of the central part (medial surface of the borehole wall is to the position of vertical downside 160mm from the sky) of langmuir probe method mensuration vacuum tank 11.Data shown in Fig. 4 (a) are that the limit changes the aggregate value limit mensuration plasma potential Vp of the high frequency power that offers whole antennas 16 and the data of floating potential Vf.(b) data shown in are data that the limit changes aggregate value limit mensuration plasma ion density Ni, plasma electron density Ne and the plasma electron energy Te of said high frequency power.Plasma potential Vp and floating potential Vf reduce corresponding to the increase of the power that provides, and plasma ion density Ni, plasma electron density Ne and plasma electron energy Te increase corresponding to the increase of power.In addition, can know,, can be suitable for 1 * 10 of various plasma process through the plasma generating equipment of the 1st embodiment from Fig. 4
11Above higher ion volume density generates the plasma of the low plasma current potential below the 20V.
The result of the plane distribution (uniformity of plasma) of the plasma density under medial surface to the vertical downside 195mm height of the sky borehole wall in the vacuum tank 11 is measured in expression among Fig. 5.Here, estimate through the ion saturation current density that obtains by the langmuir probe method.Ion saturation current density is corresponding to plasma ion density.(a) be 4 high frequency electric sources 18 from the plasma generating equipment that is arranged on the 1st embodiment mensuration results the when power that respectively differs 1000W is provided.On the other hand, (a) be 1300W, mensuration result when the high frequency electric source 18 that is connected in 3 antennas provides 700W power to be provided from the high frequency electric source 18 that is connected in 4 antennas.Therefore, it all is 4000W that the power that provides is aggregated under the arbitrary situation of (a) and (b).The plane distribution uniformity of plasma density (b) is than (a) height.Especially scheming the grid B shown in (b), 2, D, in 4 area surrounded, plasma density is roughly even.Like this, through each power supply adjustment being offered the power of antenna, may command plasma density distribution.
Expression has the formation to the plasma generating equipment of the function of each high frequency electric source adjustment high frequency power phase place among Fig. 6.In this device, waveshape detector (or phase detectors) 21 is set at outlet side corresponding to the impedance integrator 19 of each high frequency electric source 18a-18d configuration.Waveshape detector 21 is taken into the waveform of the high frequency power that offers antenna 16 at any time, and this waveform signal is sent to phase regulator 22.Phase regulator 22 detects the phase difference of 18 of each high frequency electric sources from this waveform signal, according to this result, send phase control signal to each high frequency electric source 18, to become predetermined phase difference.Export after the phase place of each high frequency electric source 18 adjustment high frequency power.
The result of the variation of the plasma density the when plasma generating equipment of presentation graphs 6 is measured the phase difference variation that makes between high frequency electric source among Fig. 7.The longitudinal axis of Fig. 7 is near the plasma electron density Ne at measuring point place, the center of vacuum tank.Transverse axis is represented the phase difference between high frequency electric source 18a-18b, 18b-18c, 18c-18d.Can know that from measuring the result phase difference is big more, then plasma density increases more.Think that this is different through the phase place between antenna, accelerated electron between these antenna, the result, plasma density increases.Because think that intensity that this electronics quickens changes along with various factors such as the size of the shape of antenna or antenna distance, air pressure, vacuum tank 11, so suitably adjust phase difference, makes plasma density become the highest.
Among Fig. 8 the plasma generating equipment of expression the 1st embodiment in the length a of sidewall direction of elongation antenna conductor, reduce the instance of day number of lines.1.56 times the antenna 23a of two length a for Fig. 3 respectively is set in the inwall of vacuum tank long side (a), 1.27 times the antenna 24a of two length a for Fig. 3 respectively is set in the inwall of short brink.2.67 times the antenna 23b of a length a for Fig. 3 respectively is set in the inwall of vacuum tank long side (b), 2.20 times the antenna 24b of a length a for Fig. 3 respectively is set in the inwall of short brink.With regard to these formations, when the impedance change that makes antenna self owing to the length of extending antenna conductor was big, through the minimizing of sky number of lines, the high frequency power that offers each antenna became big.
The device of presentation graphs 3 and Fig. 8 (a) and (b) is measured the result of the amplitude of plasma potential and floating potential among Fig. 9.Extend the conductor of antenna more, reduce the sky number of lines of each power supply, it is big more that the amplitude of floating potential and floating potential becomes.Think that this is when antenna impedance uprises, the sky number of lines of each power supply diminishes, thereby the current potential of antenna uprises and causes.Like this, the amplitude of plasma potential and floating potential becomes the big reason that increases the damage of plasma process intermediate ion that constitutes, and but then, under the situation that generates the high gaseous plasma of hydrogen or helium plasma energy, is effective.
(the 2nd embodiment)
In the 2nd embodiment, the formation of the plasma generating equipment that is conceived to the antenna aspect ratio is described.
The plane graph of the 2nd embodiment shown in Figure 10.The aspect ratio of antenna 26 during the device that this plasma generating apparatus has only changed the 1st embodiment constitutes.Therefore, in Figure 10, to the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source also identical with the 1st embodiment.In the device of this figure, shown in Figure 11 (a), the aspect ratio of whole antennas 26 is made as 2 (vertical: horizontal=2: 1).In addition, shown in Figure 11 (b), the aspect ratio of the antenna 16 of the 1st embodiment is 1 (vertical: horizontal=1: 1).If the area S in the conductor surrounded of the antenna 26 of the 2nd embodiment zone is identical with the antenna 16 of the 1st embodiment.
Below, with experimental result plasma density or the plasma electron energy that the plasma generating equipment of the 2nd embodiment generates is described.Here; The effect that produces for the variation of observing aspect ratio; To with the aspect ratio of whole high frequency antennas neat be that 2 (present embodiment, the antennas of Figure 11 (a)), 1 (antenna of the 1st embodiment, Figure 11 (b)) and 0.5 3 kinds of plasma generating equipments such as (antennas of Figure 11 (c)) are measured.Aspect ratio is that 1 edge lengths of 1 high frequency antenna is 15cm.In this experiment, argon gas is provided in vacuum tank, up to the air pressure that is 1.33Pa, to each high frequency antenna frequency being provided is the high frequency power of 13.56MHz, generates argon plasma.In addition, in the mensuration of plasma density, use the langmuir probe method.
Among Figure 12 these 3 kinds of plasma generating equipments of expression measure that substrate platform central authorities are just going up, with the result of the plasma density of high frequency antenna equal height.Here, the longitudinal axis is the plasma density of representing with logarithmic scale, and transverse axis is the size of the high frequency power that provides of each high frequency electric source.Establishing under the identical situation of high frequency power, using aspect ratio is that the device one of the present embodiment of 2 high frequency antenna can obtain than use the also high plasma density of device that aspect ratio is 1 and 0.5 high frequency antenna.
The same among Figure 13 with Figure 12, represent that 3 kinds of devices measure the result of the Energy distribution of the plasma electron that substrate platform central authorities are just going up.If the size of the high frequency power that each high frequency electric source provides is 2000W.The parameter of parameter beyond the high frequency power during with mensuration shown in Figure 12 is identical.The longitudinal axis is a logarithmic scale.To be 2 device compare for the device of value in addition with aspect ratio aspect ratio, has the plasma electron increase of 10-18eV energy.The potential difference that this high-octane electronics is produced in the high frequency antenna is quickened the electronics that the back generates.Along with aspect ratio is different, this electronics is generated, sudden direction changes.With regard to the U font high frequency antenna of present embodiment, because generate high-energy electron,, be that 1 or 0.5 situation is compared with aspect ratio so be under 2 the situation in aspect ratio at the length direction of high frequency antenna, there is more high-energy electron.
In addition, the result of Figure 13 representes through changing the aspect ratio of high frequency antenna, the electron energy in the may command plasma.Thus, the important factor during also plasma such as may command ion species or free radical kind is processed.
Below, shown in the plane graph of Figure 14, the different instance of aspect ratio that makes each antenna is described.In plasma generating equipment shown in Figure 14; The aspect ratio of 1 high frequency antenna of central authorities (for example high frequency antenna 26a) is 2 in 3 high frequency antennas that are located at 2 high frequency antennas of central authorities in 4 high frequency antennas that are provided with in the long side sidewall of vacuum tank 11 and in the short brink sidewall, are provided with, and the aspect ratio of establishing the high frequency antenna (for example high frequency antenna 26b) near 11 4 jiaos of vacuum tanks is 1.This is in order to increase as near the plasma density the substrate platform center in purpose zone, and increases the aspect ratio of the high frequency antenna that points to this place.
Use shown in Figure 15 (a) device of Figure 14 measure with the high frequency antenna equal height under the result of spatial distribution of plasma density.Simultaneously, as the comparative example of the 2nd embodiment, carry out the same result who measures shown in Figure 15 (b) aspect ratio of whole high frequency antennas being made as 1 device.Here, the size of establishing the high frequency power that each high frequency electric source provides is 1000W, and plasma generation condition in addition is identical with the condition of above-mentioned the 2nd embodiment.Can know that from Figure 15 in the device of Figure 14, the plasma density of central part is than the height of comparative example, on the contrary, the plasma density that suppresses the outer edge uprises, and the result compares with the device of comparative example, has improved the uniformity of plasma density.
(the 3rd embodiment)
In the 3rd embodiment, explain to be conceived in abutting connection with the adjacent electrode of the antenna formation of the plasma generating equipment of polarity each other.
The plane graph of the 3rd embodiment shown in Figure 16.To the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source identical with the 1st embodiment.The polarity of electrode of each high frequency antenna 16 during the device that this plasma generating apparatus has only changed the 1st embodiment constitutes.Particularly, in the antenna groups of 3 or 4 antenna formations in being arranged on same sidewall, the high frequency antenna adjacent electrode each other of establishing adjacency is same polarity each other.For example, in antenna groups 31a, the electrode of the side that is adjacent to each other among the high frequency antenna 16a of adjacency and the high frequency antenna 16b all is connected on the impedance integrator 17-high frequency electric source 18, with the electrode of the side that is adjacent to each other among high frequency antenna 16b and high frequency antenna 16c ground connection all.
Shown in Figure 17 (b), the high frequency antenna of establishing adjacency each other in the terminal of side closer to each other be under the situation of opposite polarity, between the adjacent electrode in the gap between antenna 32, produce potential difference.Therefore, the plasma density in this gap 32 is higher than other position.In addition, the thing followed is the plasma density decline of other position.On the contrary, in the device of the 3rd embodiment, be identical polar through establishing in abutting connection with antenna adjacent electrode each other, can between the adjacent electrode in gap 32, not produce potential difference.Therefore, can prevent that potential difference rises plasma density between terminal because of existing in this gap 32, prevent that the plasma density of other part from descending.
Below, the result of the plasma density that the plasma generating equipment of measuring the 3rd embodiment generates is shown.In this experiment, argon gas is provided in vacuum tank, till the air pressure that is 1.33Pa, to each high frequency antenna frequency being provided is the high frequency power of 13.56MHz, generates argon plasma.Other condition is represented when the explanation of each mensuration.In addition, in the mensuration of plasma density, use the langmuir probe method.
The plasma generating equipment of expression the 3rd embodiment is being measured the result of plasma density on just with high frequency antenna equal height, substrate platform central authorities among Figure 18.Illustrating in order relatively to make adjacent electrode among this figure simultaneously is the mensuration result of the plasma generating equipment of opposite polarity each other.Here, the longitudinal axis is the plasma electron density of being represented by logarithmic scale, and transverse axis is the size of the high frequency power that provides of each high frequency electric source.Value in high frequency power is under the situation of arbitrary value, and the device of present embodiment all can obtain the plasma density higher than the device of comparative example.Especially be under the situation of 1200W-2500W in high frequency power, the plasma density of present embodiment is about 2 times of plasma density of comparative example.
Measure the result of the spatial distribution of plasma density shown in Figure 19.The condition determination of this moment is as follows.High frequency power only offers 1 group of antenna groups 31b shown in Figure 16.The size of the high frequency power that high frequency electric source provides is 1500W.Represent the position on the parallel straight line that leaves the sidewall 13cm that is provided with antenna groups 31b as the transverse axis of Figure 19 of the measuring point of plasma density.Can know that from Figure 19 the plasma density of the plasma generating equipment end of comparative example is lower than near the plasma density the center, deviation appears in the spatial distribution of plasma density.On the contrary, in the plasma generating equipment of present embodiment, lacking of the plasma generating equipment of the spatial distribution deviation ratio comparative example of plasma density improves the uniformity of plasma density distribution.
(the 4th embodiment)
In the 4th embodiment, the formation that impedance component is connected in the plasma generating equipment on the antenna is described.
The plane graph of the 4th embodiment shown in Figure 20.To the additional symbol identical of the inscape identical with Fig. 3 with the 1st embodiment.The number of high frequency electric source or to be connected in the number of the antenna on each high frequency electric source identical with the 1st embodiment.This plasma generating apparatus is connected impedance component 41 between electrode of each high frequency antenna 16 and impedance integrator 17 with regard to the device of the 1st embodiment constitutes.As impedance component 41, for example can use variableimpedance coil 42 shown in Figure 21.In addition, the adjusting of the resistance value of variableimpedance coil 42 also can manually be carried out, but under the situation of the FEEDBACK CONTROL of stating after the implementation, expectation is provided with driver 43 and carries out automatically.In addition, in the present embodiment, impedance component 41 is connected on the electrode of high frequency electric source 20 sides of antenna 16, but also can impedance component 41 be connected on the electrode of ground connection side.
In addition, in the 4th embodiment, shown in the vertical direction sectional view of Figure 22, pick-up winding 44 and capacitor 45 are set.Because be projected into the part that high frequency antenna 16 externally is set of vacuum tank 11, so as long as pick-up winding 44 is arranged near the of this protuberance with capacitor 45, not corroded by plasma.Because pick-up winding 44 is used for amperometric determination, so also can be arranged on one of the ground connection side of high frequency antenna 16, connection side of tremendously high frequency power supply.In order to be transformed into direct current signal, on each pick-up winding 44 and capacitor 45, be connected bridgt circuit shown in Figure 23 46 respectively from the AC signal of pick-up winding 44 or capacitor 45.Also can use the wave detector of output direct current signal behind the detection AC signal to replace bridgt circuit.The control part 47 (Figure 20) of the signal of the resistance value that in addition, be provided with behind these signals of input, output is used to set impedance component 41.
In the plasma generating equipment of present embodiment; Former thereby in plasma density, produce under the situation about distributing for example because of in copper coin 19, producing Temperature Distribution etc.; Power through offering each high frequency antenna 16 behind the resistance value of regulating each impedance component 41 becomes appropriate value, the density of homogenizing plasma.Here, have reproducibility in the plasma density distribution of generation, wait under the situation about can know through experiment at the resistance value that each impedance component of reply is set, as long as use the blocked impedance element.In addition, plasma density distribution is because of the gas that uses or the conditions such as power that provide are different has under the same conditions under the situation of reproducibility, as long as use variable impedance element to set the resistance value corresponding to this condition.In addition, under the situation of not knowing based on the difference of the plasma density distribution of condition or reproducibility, the feedback plasma density distribution, the impedor resistance value of implement variable is regulated.
Carry out said FEEDBACK CONTROL as follows.To import control part 47 from the current signal that is arranged on the pick-up winding 44 in each antenna and/or from the voltage signal of capacitor 45.The power signal of one of these signals in certain antenna or their long-pending formation is that setting is when above; Promptly the plasma density around this antenna is setting when above, and the driver 43 that control part 47 is provided with in the impedance component that is connected in this antenna 41 is exported the signal of the resistance value that is used to increase this element.On the other hand, signals such as the electric current in antenna are under the situation below the setting, and control part 47 is to the signal of driver 43 outputs reducing resistance value.The driver 43 that receives these signals from control part 47 should be set setting for by impedor resistance value.Thus, can the plasma density around this impedance component be controlled in the prescribed limit.
Below, the experiment of the plasma density distribution of measuring the plasma generating equipment generation of using present embodiment is described.In this experiment, 3 antenna A, B, C that only with dashed lines surrounds in Figure 20 provide high frequency power, measure apart from be provided with the plasma density distribution on the straight line of vacuum tank side 13cm of these antenna with the langmuir probe method.Here the plasma that generates is an argon plasma, is providing argon gas up to for behind the air pressure of 1.33Pa, from being connected in 3 antenna A, B, a last high frequency electric source of C the high frequency power of 2000W, 13.56MHz is provided.
Through corresponding to regulating impedor resistance value from the signal of pick-up winding 44; Make produce the size of current ratio flow through 3 antenna A, B, C be 1: 1.2: 1,2: 1: 2 with three states such as 3: 1: 3, to each situation mensuration plasma density distribution.These measure the result shown in Figure 24.Each electric current at 3 high frequency antennas equates basically, current ratio is under 1: 1.2: 1 the situation, and near the plasma density the central authorities uprises the plasma density step-down of outer edge.On the contrary, be that near the plasma density the central authorities reduces under 2: 1: 2 the situation in the current ratio behind the electric current of the high frequency antenna that increases two ends, on the other hand, the plasma density of outer edge rises, and can know that the uniformity of plasma density is improved.In addition, be under 3: 1: 3 the situation becoming current ratio behind the electric current of the high frequency antenna that increases two ends, with current ratio be that 1: 1.2: 1 situation is opposite, near the plasma density step-down the central authorities.
In addition, make the best current ratio of this plasma density distribution different because of the difference that conditions such as power are provided of the kind of plasma gas or pressure, high frequency electric source.Therefore, suitably regulate impedor resistance value, make this current ratio become the optimum value that is adapted to these conditions.
All the flat shape of vacuum tank is made as rectangle among above-mentioned each embodiment, but also circle wait other shape.In addition, in above-mentioned each embodiment, antenna is arranged on the sidewall of vacuum tank, but also can or all be arranged on the sky borehole wall of vacuum tank a part of of antenna.
Claims (18)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002363989 | 2002-12-16 | ||
| JP2002363988A JP3618333B2 (en) | 2002-12-16 | 2002-12-16 | Plasma generator |
| JP2002-363989 | 2002-12-16 | ||
| JP2002363989A JP3920209B2 (en) | 2002-12-16 | 2002-12-16 | Plasma generator |
| JP2002363988 | 2002-12-16 | ||
| JP2002-363988 | 2002-12-16 | ||
| JP2003014718 | 2003-01-23 | ||
| JP2003014718A JP2004228354A (en) | 2003-01-23 | 2003-01-23 | Plasma generator |
| JP2003-014718 | 2003-01-23 |
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| Application Number | Title | Priority Date | Filing Date |
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| CNB2003801061178A Division CN100413382C (en) | 2002-12-16 | 2003-12-12 | Plasma generating apparatus, plasma control method, and substrate manufacturing method |
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| CN101128083A CN101128083A (en) | 2008-02-20 |
| CN101128083B true CN101128083B (en) | 2012-04-11 |
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| CN2007101624036A Expired - Lifetime CN101128084B (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
| CNB2003801061178A Expired - Lifetime CN100413382C (en) | 2002-12-16 | 2003-12-12 | Plasma generating apparatus, plasma control method, and substrate manufacturing method |
| CNB2007101624040A Expired - Lifetime CN100546005C (en) | 2002-12-16 | 2003-12-12 | Plasma generating device, plasma control method, and substrate manufacturing method |
| CN2007101624017A Expired - Lifetime CN101128083B (en) | 2002-12-16 | 2003-12-12 | Plasma generation device, plasma control method, and substrate manufacturing method |
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| CNB2003801061178A Expired - Lifetime CN100413382C (en) | 2002-12-16 | 2003-12-12 | Plasma generating apparatus, plasma control method, and substrate manufacturing method |
| CNB2007101624040A Expired - Lifetime CN100546005C (en) | 2002-12-16 | 2003-12-12 | Plasma generating device, plasma control method, and substrate manufacturing method |
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| JP2007123008A (en) * | 2005-10-27 | 2007-05-17 | Nissin Electric Co Ltd | Plasma generation method and its device, and plasma processing device |
| JP2007149638A (en) * | 2005-10-27 | 2007-06-14 | Nissin Electric Co Ltd | Plasma generating method and apparatus, and plasma processing apparatus |
| JP2007220600A (en) * | 2006-02-20 | 2007-08-30 | Nissin Electric Co Ltd | Plasma generation method, plasma generation apparatus, and plasma processing apparatus |
| JP2007311182A (en) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | Inductively-coupled plasma processing device, and plasma processing method |
| JP5329167B2 (en) * | 2007-11-21 | 2013-10-30 | 東京エレクトロン株式会社 | Inductively coupled plasma processing apparatus, inductively coupled plasma processing method, and storage medium |
| EP2304775A2 (en) * | 2008-07-14 | 2011-04-06 | United Solar Ovonic LLC | Deposition apparatus for improving the uniformity of material processed over a substrate and method of using the apparatus |
| KR101063763B1 (en) * | 2009-01-22 | 2011-09-08 | 서울대학교산학협력단 | Plasma generation system |
| JP2010212321A (en) * | 2009-03-09 | 2010-09-24 | Hitachi Kokusai Electric Inc | Semiconductor manufacturing apparatus |
| JP5400434B2 (en) * | 2009-03-11 | 2014-01-29 | 株式会社イー・エム・ディー | Plasma processing equipment |
| JP5382115B2 (en) * | 2009-05-19 | 2014-01-08 | 日新電機株式会社 | Plasma device |
| JP5723130B2 (en) | 2010-09-28 | 2015-05-27 | 東京エレクトロン株式会社 | Plasma processing equipment |
| JP5935461B2 (en) * | 2012-04-03 | 2016-06-15 | 株式会社Ihi | Plasma processing equipment |
| JP5977853B1 (en) * | 2015-03-20 | 2016-08-24 | 株式会社日立国際電気 | Substrate processing apparatus, semiconductor device manufacturing method, program, and recording medium |
| JP7221115B2 (en) * | 2019-04-03 | 2023-02-13 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP3618333B2 (en) | 2005-02-09 |
| CN101128084A (en) | 2008-02-20 |
| CN100546005C (en) | 2009-09-30 |
| CN101127305A (en) | 2008-02-20 |
| CN1726745A (en) | 2006-01-25 |
| CN101128084B (en) | 2011-12-14 |
| CN101128083A (en) | 2008-02-20 |
| CN100413382C (en) | 2008-08-20 |
| JP2004200232A (en) | 2004-07-15 |
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