CN101197354A - Stacked package structure - Google Patents
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- CN101197354A CN101197354A CNA2006101688777A CN200610168877A CN101197354A CN 101197354 A CN101197354 A CN 101197354A CN A2006101688777 A CNA2006101688777 A CN A2006101688777A CN 200610168877 A CN200610168877 A CN 200610168877A CN 101197354 A CN101197354 A CN 101197354A
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- 239000000758 substrate Substances 0.000 claims abstract description 94
- 238000004806 packaging method and process Methods 0.000 claims abstract description 47
- 239000008393 encapsulating agent Substances 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 239000011135 tin Substances 0.000 claims description 4
- 229910052718 tin Inorganic materials 0.000 claims description 4
- 230000001568 sexual effect Effects 0.000 claims description 2
- 239000003292 glue Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 5
- 229910000679 solder Inorganic materials 0.000 description 21
- 239000010410 layer Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 239000003566 sealing material Substances 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 6
- 239000012790 adhesive layer Substances 0.000 description 4
- 238000012858 packaging process Methods 0.000 description 3
- 238000012536 packaging technology Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32135—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/32145—Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19106—Disposition of discrete passive components in a mirrored arrangement on two different side of a common die mounting substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19107—Disposition of discrete passive components off-chip wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
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Abstract
一种堆叠式封装结构,该封装结构至少包括:一基板,具有相对的第一表面及第二表面;至少一芯片,配置在基板的第一表面上,并与基板的第一表面电性连接;复数个电性连接元件,配置在基板第一表面的周围,其中每一电性连接元件高于芯片;以及一封胶体,包覆在基板的第一表面、芯片、以及电性连接元件上,其中封胶体的一表面暴露出每一电性连接元件的顶端。
A stacked packaging structure includes at least: a substrate having a first surface and a second surface opposite to each other; at least one chip disposed on the first surface of the substrate and electrically connected to the first surface of the substrate; a plurality of electrical connection elements disposed around the first surface of the substrate, wherein each electrical connection element is higher than the chip; and a sealing body covering the first surface of the substrate, the chip, and the electrical connection elements, wherein a surface of the sealing body exposes the top of each electrical connection element.
Description
技术领域 technical field
本发明涉及一种系统整合型封装(System-In-Package;SIP)结构,特别是关于一种堆叠式(Stacked)封装结构。The present invention relates to a system-in-package (System-In-Package; SIP) structure, in particular to a stacked (Stacked) package structure.
背景技术 Background technique
低成本、小尺寸与多功能的需求已成为电子工业发展的主要动力。为达到这些目的,目前已发展出许多先进的封装技术,例如覆晶、芯片尺寸封装(Chip Scale Package;CSP)、晶圆级封装以及立体封装(3DPackage)技术等。立体封装技术可将晶粒、封装与被动元件整合成一封装体,而可成为系统封装的一种解决方式。立体封装技术的整合可以是并排方式(side-by-side)、堆叠式或上述两种方式的结合。立体封装具有占位面积小、性能高与成本低的优势The demand for low cost, small size and multi-function has become the main driving force for the development of the electronics industry. To achieve these goals, many advanced packaging technologies have been developed, such as flip chip, chip scale package (Chip Scale Package; CSP), wafer level packaging, and three-dimensional packaging (3DPackage) technologies. The three-dimensional packaging technology can integrate the chip, packaging and passive components into a package, and can become a solution for system packaging. The integration of the three-dimensional packaging technology can be side-by-side, stacked or a combination of the above two methods. Three-dimensional packaging has the advantages of small footprint, high performance and low cost
图1至图3为现有的一种堆叠式封装结构的制程剖面图。制作现有的堆叠式封装结构250时,通常先提供芯片封装结构100,其中该芯片封装结构100大都为芯片尺寸封装结构。芯片封装结构100主要包括基板102、芯片104、封胶体108以及焊球110,如图1所示。芯片104黏合在基板102的上表面112上,并利用导线106与基板102上的焊垫(未图示)电性连接。封胶体108则形成在基板102的上表面112上,并且完全包覆住芯片104、导线106以及基板102的上表面112。焊球110则设置在基板102的下表面114的外围区域,其中焊球110与芯片104电性连接。1 to 3 are process cross-sectional views of a conventional package-on-package structure. When fabricating the existing stacked
接着,提供另一芯片封装结构200,该芯片封装结构200主要包括基板202、芯片204、封胶体208以及焊球210,如图2所示。其中,芯片204黏合在基板202的上表面212上,并透过导线206与基板202上的焊垫(未图示)电性连接。封胶体208形成在基板202的上表面212的一部分上,并将芯片204与导线206完全包覆住。焊球210则设置在基板202的下表面214的外围区域,其中焊球210与芯片204电性连接。该芯片封装结构200的基板202的上表面212进一步具有若干个接合焊垫216,这些接合焊垫216的位置对应于基板102的下表面114的焊球110。Next, another
然后,将芯片封装结构100叠置在芯片封装结构200上,并使芯片封装结构100的焊球110分别位于对应的接合焊垫216上。再进行回焊处理,即可使芯片封装结构100的焊球110接合在芯片封装结构200的接合焊垫216上,从而完成堆叠式封装结构250的制作。Then, the
然而,在进行芯片封装结构100与芯片封装结构200的接合处理期间,芯片封装结构100与芯片封装结构200会产生翘曲(Warpage),尤其是芯片封装结构100。此外,由于芯片封装结构100的基板102与芯片封装结构200的基板202间的空间仍相当多,并且芯片封装结构100与芯片封装结构200之间的接合处是落在外围区,因此会形成冷焊(ColdJoint),从而产生接合不完全的问题。这样都会严重影响堆叠式封装结构的可靠度,并大大地降低封装制程的良率,导致成本大幅提高。However, during the bonding process of the
发明内容 Contents of the invention
本发明的目的在于提供一种堆叠式封装结构,可缩减封装结构所占的面积,从而大幅减小印刷电路板的面积。The purpose of the present invention is to provide a stacked packaging structure, which can reduce the area occupied by the packaging structure, thereby greatly reducing the area of the printed circuit board.
为实现上述目的,本发明提供一种堆叠式封装结构,至少包括一第一芯片封装结构、一第二芯片封装结构堆叠在第一芯片封装结构上、以及若干个第一连接构件与第二连接构件。第一芯片封装结构至少包括:一第一基板,具有相对的第一表面以及第二表面;至少一第一芯片,配置在第一基板的第一表面上,并与第一基板的第一表面电性连接;若干个第一电性连接元件,配置在第一基板第一表面的周围,其中每一第一电性连接元件高于第一芯片;一第一封胶体,包覆在第一基板的第一表面、第一芯片、以及第一电性连接元件上,其中第一封胶体的一表面暴露出每一第一电性连接元件的顶端;以及若干个第一连接构件,配置在第一基板的第二表面上,其中第一芯片以及第一电性连接元件分别与这些第一连接构件电性连接。第二芯片封装结构至少包括:一第二基板,具有相对的第一表面以及第二表面;至少一第二芯片,配置在第二基板的第一表面上;以及一第二封装体,包覆在第二基板的第一表面以及第二芯片上。第二连接构件配置在每一第一电性连接元件的顶端上,并且这些第二连接构件与第二基板的第二表面接合,其中第二芯片分别与这些第二连接构件电性连接。To achieve the above object, the present invention provides a stacked packaging structure, which at least includes a first chip packaging structure, a second chip packaging structure stacked on the first chip packaging structure, and several first connecting members and second connecting members. member. The first chip packaging structure at least includes: a first substrate having opposite first surfaces and second surfaces; at least one first chip configured on the first surface of the first substrate and connected to the first surface of the first substrate electrical connection; a plurality of first electrical connection elements, arranged around the first surface of the first substrate, wherein each first electrical connection element is higher than the first chip; a first encapsulant, coated on the first On the first surface of the substrate, the first chip, and the first electrical connection elements, wherein a surface of the first encapsulant exposes the top of each first electrical connection element; and several first connection members are arranged on On the second surface of the first substrate, the first chip and the first electrical connection elements are respectively electrically connected to the first connection members. The second chip packaging structure at least includes: a second substrate having opposite first and second surfaces; at least one second chip disposed on the first surface of the second substrate; and a second package covering the on the first surface of the second substrate and the second chip. The second connection members are disposed on the top of each first electrical connection element, and the second connection members are bonded to the second surface of the second substrate, wherein the second chip is electrically connected to the second connection members respectively.
根据本发明的上述目的,提供一种封装结构,至少包括:一基板,具有相对的第一表面以及第二表面;至少一芯片,配置在基板的第一表面上,并与基板的第一表面电性连接;若干个电性连接元件,配置在基板第一表面的周围,其中每一电性连接元件高于芯片;以及一封胶体,包覆在基板的第一表面、至少一芯片、以及电性连接元件上,其中封胶体的一表面暴露出每一电性连接元件的顶端。According to the above object of the present invention, a package structure is provided, comprising at least: a substrate having opposite first surfaces and second surfaces; at least one chip configured on the first surface of the substrate and connected to the first surface of the substrate electrical connection; a plurality of electrical connection elements are arranged around the first surface of the substrate, wherein each electrical connection element is higher than the chip; and an encapsulant is coated on the first surface of the substrate, at least one chip, and On the electrical connection elements, one surface of the encapsulant exposes the top of each electrical connection element.
依照本发明一较佳实施例,上述的第一电性连接元件与第二电性连接元件可为导线(Wires)、导电柱(Conductive Studs)、导脚(Pins)、电子元件(Electronic Components)或上述元件的任意组合。According to a preferred embodiment of the present invention, the above-mentioned first electrical connection element and the second electrical connection element can be wires, conductive studs, pins, electronic components or any combination of the above elements.
与现有技术相比,本发明的优点之一就在于本堆叠式封装结构可缩减封装结构所占的面积,因此可大幅减小印刷电路板的面积。本发明的另一优点为可整合上芯片封装结构与下芯片封装结构之间的连接关系,并且可有效避免芯片封装结构在接合时产生翘曲,并防止接合芯片封装结构之间形成虚焊的情况,从而可大大提高堆叠式封装制程的良率。Compared with the prior art, one of the advantages of the present invention is that the package-on-package structure can reduce the area occupied by the package structure, so the area of the printed circuit board can be greatly reduced. Another advantage of the present invention is that it can integrate the connection relationship between the upper chip packaging structure and the lower chip packaging structure, and can effectively avoid warping of the chip packaging structure during bonding, and prevent the formation of false welds between the bonded chip packaging structures situation, which can greatly improve the yield rate of the stacked packaging process.
以下结合附图与实施例对本发明作进一步的说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
附图说明 Description of drawings
图1至图3为现有的一种堆叠式封装结构的制程剖面图。1 to 3 are process cross-sectional views of a conventional package-on-package structure.
图4至图9B为依照本发明第一较佳实施例的一种堆叠式封装结构的制程剖面图。4 to 9B are process cross-sectional views of a package-on-package structure according to the first preferred embodiment of the present invention.
图10A与10B为依照本发明第二较佳实施例的一种堆叠式封装结构的剖面图。10A and 10B are cross-sectional views of a package-on-package structure according to a second preferred embodiment of the present invention.
图11A与11B为依照本发明第三较佳实施例的一种堆叠式封装结构的剖面图。11A and 11B are cross-sectional views of a package-on-package structure according to a third preferred embodiment of the present invention.
图12A为依照本发明第四较佳实施例的一种堆叠式封装结构的基板剖面图。12A is a cross-sectional view of a substrate of a package-on-package structure according to a fourth preferred embodiment of the present invention.
图12B与12C为依照本发明第四较佳实施例的一种堆叠式封装结构的剖面图。12B and 12C are cross-sectional views of a package-on-package structure according to a fourth preferred embodiment of the present invention.
具体实施方式 Detailed ways
有关本发明的详细说明及技术内容,现就结合附图说明如下:Relevant detailed description and technical contents of the present invention are as follows now in conjunction with the accompanying drawings:
图4至图9B为依照本发明一较佳实施例的一种堆叠式封装结构的制程剖面图,同时请一并参考图12A。制作本发明堆叠式封装结构时,首先制作芯片封装结构324a,例如图8所示的结构。制作芯片封装结构324a时,先提供基板300a或基板300b,其中基板300a或基板300b可以是印刷电路板(PCB)。基板300a具有相对的表面326a与表面328a,基板300b具有相对的表面326b与表面328b。应注意的一点是,基板300b在供货商提供之时,已在表面326b上设置有若干个电性连接元件312d,并且电性连接元件312d较佳地是设置在基板326b的周围,如图12A所示;而基板300a的两相对表面326a与表面328a并未设有任何元件,如图4所示。在本实施例中,芯片封装结构324a是制作在基板300a上。4 to 9B are process cross-sectional views of a package-on-package structure according to a preferred embodiment of the present invention, and please also refer to FIG. 12A . When fabricating the stacked package structure of the present invention, first fabricate the
接着,将芯片结构308接合在基板300a的表面326a的中央区域上,再利用例如打线方式形成导线316来连接芯片结构308与基板300a表面326a上的焊垫(未图示),而使芯片结构308与基板300a电性连接。并依需求而将所需的被动元件310接合在芯片结构308外围的基板300a的表面326a上,其中这些被动元件310可以是电阻、电感或电容。在本实施例中,芯片结构308包括芯片302与芯片306的多重芯片结构,其中芯片302与芯片306可利用黏着层304加以接合,黏着层304的材料可以是环氧树脂(Epoxy)。然而,值得注意的一点是,本发明的芯片结构也可以是单一芯片。再形成若干个电性连接元件312a在基板300a的表面326a的外围区域上,其中电性连接元件312a较佳地是位于芯片结构308与被动元件310的外围,如图5所示。这些电性连接元件312a的高度须高于芯片结构308的高度。本实施例的电性连接元件312a为导线(Wires)。Next, the
但是,在本发明的其它实施例中,可使用其它不同型式的电性连接元件,例如图10A所示的电性连接元件312b、图11a所示的电性连接元件312c、以及图12A所示的电性连接元件312d,其中电性连接元件312b为导电柱(Conductive Studs),电性连接元件312c为电子元件(ElectronicComponents),例如被动元件,而电性连接元件312d为导脚(Pins)。此外,应注意的一点是,本发明堆叠式封装结构的电性连接元件也可以是上述实施例的各种电性连接元件的任意组合,例如图11A所示的芯片封装结构324c。在本发明中,电性连接元件312a、电性连接元件312b、以及电性连接元件312d的材料可以是金、铝、铜、锡以及上述材料的合金。此外,电性连接元件312a、电性连接元件312b、电性连接元件312c以及电性连接元件312d可利用焊锡(Solder)或焊锡的合金等附着材料而分别装设在基板300a的表面326a上。However, in other embodiments of the present invention, other different types of electrical connection elements can be used, such as the
接下来,利用例如封胶或涂布的方式形成封胶材料层317覆盖在基板300a的表面326a上,并包覆住位于基板300a的表面326a上的芯片结构308、导线316、被动元件310以及电性连接元件312a,如图6所示。再形成若干个连接构件,例如焊球320,接合在基板300a的表面328a的外围区域上,并最好形成散热片330在基板300a的表面328a的中央区域上,以利元件进行散热,如图7C所示。其中,芯片结构308与电性连接元件312a分别与这些焊球320电性连接。随后,利用机械方式或化学方式,对封胶材料层317进行研磨,以移除部分的封胶材料层317,直至暴露出每一个电性连接元件312a的顶端314a,而形成封胶体318,如第7A图所示。Next, the sealing
待封胶体318形成后,形成多个连接构件,例如焊球322a,分别接合在各电性连接元件312a的顶端314a,而完成芯片封装结构324a,如图7B所示。其中,制作这些连接焊球332a时可利用直接植球法(DirectBall Attach)、纱网印刷(Screen Print)、电镀法或无电电镀法等。After the
接着,可以相似于芯片封装结构324a的方式,制作芯片封装结构420a。芯片封装结构420a主要是由基板400、芯片结构408、以及电性连接元件412a所组成。基板400具有相对的表面422与表面424。先将芯片结构408接合在基板400的表面422的中央区域上,再利用例如打线方式形成导线416来连接芯片结构408与基板400的表面422上的焊垫(未图示),而使芯片结构408与基板400电性连接。在该实施例中,芯片结构408包括芯片402与芯片406的多重芯片结构,其中芯片402与芯片406可利用黏着层404加以接合,黏着层404的材料可以是环氧树脂。值得注意的一点是,本发明的芯片结构也可以是单一芯片。接下来,形成若干个电性连接元件412a在基板400的表面422的外围区域上。在本发明的一实施例中,可依元件需求而将所需的被动元件410接合在芯片结构408外围的基板400的表面422上,其中这些被动元件410可以是电阻、电感或电容。电性连接元件412a较佳地是位于芯片结构408与被动元件410的外围,并且电性连接元件412a的高度须高于芯片结构408的高度,如图9A所示。本实施例的电性连接元件412a为导线。然而,芯片封装结构420a也可使用其它不同型式的电性连接元件,例如导电柱、电子元件、导脚、或上述各种电性连接元件的任意组合。电性连接元件412a的材料可以是金、铝、铜、锡以及上述材料的合金,并且电性连接元件412a可利用焊锡或焊锡的合金等附着材料而分别装设在基板400的表面422上。接着,涂布封胶材料层(未图示)覆盖在基板400的表面422上,并包覆住位于基板400的表面422上的芯片结构408、导线416、被动元件410以及电性连接元件412a。再利用机械研磨方式或化学研磨方式,移除部分的封胶材料层,直至暴露出每一个电性连接元件412a的顶端414a,而形成封胶体418,完成芯片封装结构420a。再利用焊接方式将芯片封装结构420a堆叠接合在芯片封装结构324a上,而使基板400的表面424与连接焊球322a接合,并使芯片结构408与电性连接元件412a分别与连接焊球322a电性连接,而完成堆叠式封装结构,如图9A所示。在本发明中,较佳地,芯片封装结构324a与芯片封装结构420a具有相同的尺寸。Next, chip package structure 420a may be fabricated in a manner similar to
在本发明的其它实施例中,可使用其它不同型式的电性连接元件或这些电性连接元件的组合,例如芯片封装结构420b(图10A)的电性连接元件412b、芯片封装结构420d(图12B)的电性连接元件412d、以及芯片封装结构420c(图11A、11B)的电性连接元件412c与电性连接元件430的组合,其中电性连接元件430的接点434与接点436位于位于电性连接元件430的上下两端,并且暴露位于电性连接元件430的顶端432的接点434。在这些实施例中,封胶体418暴露出每一个电性连接元件412b的顶端414b、每一个电性连接元件412c的顶端414c、以及每一个电性连接元件412d的顶端414d。因此,除了图9A所示的堆叠结构外,本发明的堆叠式封装结构可以是如同图10A、图11A或图12B所示的结构。In other embodiments of the present invention, other different types of electrical connection elements or a combination of these electrical connection elements can be used, such as the
此外,本发明的堆叠式封装结构可进一步在基板400的表面424上设置芯片426与被动元件428,使用尺寸较大的连接焊球322b,并且连接焊球322b的高度大于芯片426的高度,以避免芯片426与被动元件428接触到下方的芯片封装结构。此时,可形成如图9B的芯片封装结构421a、图10B的芯片封装结构421b、图11B的芯片封装结构421c、以及图12C的芯片封装结构421d。In addition, the package-on-package structure of the present invention can further arrange a
在本发明的一些实施例中,可利用模具来形成封胶体,其中该模具包括若干个柱状结构,并且这些柱状结构对应于基板上的接合焊垫。将封胶材料注入该模具并经硬化处理后,可形成具有许多开口设于其中的封胶体,并且这些开口将暴露出基板上的接合焊垫。接着,可将导电材料注入这些开口中,这样可分别在开口中形成电性连接元件,以连接基板上所暴露出的接合焊垫。在本发明的其它实施例中,可利用例如封胶或涂布方式先在基板上形成封胶材料层。接着,对该封胶材料层进行钻孔处理,以在该封胶材料层中形成许多开口,其中这些开口暴露出基板上的接合焊垫。随后,将导电材料注入这些开口中,这样可分别在开口中形成电性连接元件,以连接基板上所暴露出的接合焊垫。In some embodiments of the present invention, a mold can be used to form the encapsulant, wherein the mold includes several columnar structures, and these columnar structures correspond to bonding pads on the substrate. After the encapsulant is injected into the mold and hardened, an encapsulant with a plurality of openings disposed therein exposing the bonding pads on the substrate can be formed. Then, conductive material can be injected into these openings, so that electrical connection elements can be formed in the openings respectively, so as to connect the exposed bonding pads on the substrate. In other embodiments of the present invention, a sealing material layer may be firstly formed on the substrate by using, for example, sealing or coating. Then, the sealing material layer is drilled to form a plurality of openings in the sealing material layer, wherein the openings expose the bonding pads on the substrate. Subsequently, conductive material is injected into these openings, so that electrical connection elements can be respectively formed in the openings to connect the exposed bonding pads on the substrate.
从上述的示范实施例中可知,由于本发明的两芯片封装结构的基板间的空间已大部分为封胶材料所填充,从而可大幅缩减两芯片封装结构之间的空间,因此在接合上下两堆叠的芯片封装结构时,可避免芯片封装结构产生翘曲,从而可防止两芯片封装结构焊接不完全。As can be seen from the above exemplary embodiments, since most of the space between the substrates of the two-chip packaging structure of the present invention is filled with the sealing material, the space between the two-chip packaging structures can be greatly reduced. When the chip package structure is stacked, warping of the chip package structure can be avoided, thereby preventing incomplete welding of the two chip package structures.
以上实施例均仅为两芯片的堆叠封装结构,然而应该注意的一点是,本发明的堆叠式封装结构也可以是包含两个以上的芯片的堆叠封装结构,并不限于上述实施例。The above embodiments are only two-chip stacked package structures, but it should be noted that the stacked package structure of the present invention may also be a stacked package structure including more than two chips, and is not limited to the above-mentioned embodiments.
与现有技术相比,本发明的优点之一就在于本堆叠式封装结构可缩减封装结构所占的面积,因此可大幅减小印刷电路板的面积。Compared with the prior art, one of the advantages of the present invention is that the package-on-package structure can reduce the area occupied by the package structure, so the area of the printed circuit board can be greatly reduced.
由上述本发明较佳实施例可知,本发明的另一优点为可整合上芯片封装结构与下芯片封装结构之间的连接关系,并且可有效避免芯片封装结构在接合时产生翘曲,并防止接合芯片封装结构之间形成虚焊的情况,从而可大大提高堆叠式封装制程的良率。It can be seen from the above-mentioned preferred embodiments of the present invention that another advantage of the present invention is that it can integrate the connection relationship between the upper chip packaging structure and the lower chip packaging structure, and can effectively prevent the chip packaging structure from warping during bonding, and prevent The formation of virtual soldering between bonding chip packaging structures can greatly improve the yield rate of the stacked packaging process.
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| CN101958261A (en) * | 2009-08-25 | 2011-01-26 | 日月光半导体制造股份有限公司 | Stackable semiconductor package structure |
| CN102064159A (en) * | 2010-11-05 | 2011-05-18 | 中国兵器工业集团第二一四研究所苏州研发中心 | Multi-module packaged component |
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