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CN101239785B - Production method of large-screen thin film transistor module thinning liquid - Google Patents

Production method of large-screen thin film transistor module thinning liquid Download PDF

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Publication number
CN101239785B
CN101239785B CN2008100207783A CN200810020778A CN101239785B CN 101239785 B CN101239785 B CN 101239785B CN 2008100207783 A CN2008100207783 A CN 2008100207783A CN 200810020778 A CN200810020778 A CN 200810020778A CN 101239785 B CN101239785 B CN 101239785B
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rare earth
earth oxide
suspension
thinning
thin film
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CN101239785A (en
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孙韬
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Jiangsu Wujin High Tech Investment Holding Co ltd
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  • Silicon Compounds (AREA)
  • Soil Conditioners And Soil-Stabilizing Materials (AREA)
  • Silicates, Zeolites, And Molecular Sieves (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

大屏幕薄膜晶体管模组减薄液的生产方法，涉及一种化工产品的生产工艺，特别是用于加工玻璃的减薄液的生产技术领域。将多聚硅酸盐加入稀土氧化物悬浮液中，调整稀土氧化物、多聚硅酸盐的混合悬浮液的pH为5～8；将稀土氧化物、多聚硅酸盐的混合悬浮液升温至20～90℃，经保温后降温至10～25℃，再加入非离子性水溶性有机聚合物以及有机酸，调节混合悬浮液的pH值至5～8。本发明工艺简单、易于操作，产品悬浮性强，不宜沉积，分散稳定性好，在对大屏幕薄膜晶体管模组加工时，减薄效果稳定，表面缺陷低，减薄无划痕，可有效提高平化减薄效率，减薄效率可达699纳米/分钟，且不易造成对减薄机的损伤。The invention relates to a production method of a thinning liquid for a large-screen thin film transistor module, which relates to a production process of a chemical product, in particular to the technical field of production of a thinning liquid used for processing glass. Add polysilicate to the rare earth oxide suspension, adjust the pH of the mixed suspension of rare earth oxide and polysilicate to 5-8; raise the temperature of the mixed suspension of rare earth oxide and polysilicate to 20-90°C, and then lower the temperature to 10-25°C after heat preservation, then add non-ionic water-soluble organic polymers and organic acids to adjust the pH value of the mixed suspension to 5-8. The invention is simple in process, easy to operate, strong in suspension, unsuitable for deposition, and good in dispersion stability. When processing large-screen thin film transistor modules, the thinning effect is stable, the surface defect is low, and there is no scratch in thinning, which can effectively improve Flatten the thinning efficiency, the thinning efficiency can reach 699nm/min, and it is not easy to cause damage to the thinning machine.

Description

The production method of large screen thin film transistor die set thinning liquid
Technical field
The present invention relates to a kind of production process of chemical product, especially for the production technical field of the reducer of processed glass.
Background technology
Employed reducer was mainly done the attenuate friction agent with the large particle rare-earth oxide powder during current large screen thin film transistor (TFT) module processing enterprise produced, overall attenuate speed is low, dispersion stabilization is poor, causes serious surface tear easily, also has defectives such as graduation attenuate efficient is low.Long-time attenuate often reduces attenuate efficient greatly, causes the rapid wearing of attenuate machine, and production efficiency is low, and the consumption of a large amount of consumptive materials.
Summary of the invention
The object of the invention is to invent that a kind of dispersion stabilization is good, graduation attenuate efficient height, do not damage large screen thin film transistor (TFT) die set thinning liquid of attenuate machine.
Effective ingredient of the present invention is rare earth oxide, molecular weight less than the water-soluble organic polymer of 500 nonionic, molecular weight less than 200 poly silicate and organic acid, and the pH value of reducer is 5～8.
Product suspension of the present invention is strong, should not deposit, dispersion stabilization is good, large screen thin film transistor (TFT) module is being added man-hour, the attenuate effect stability, surface imperfection is low, the attenuate no marking, can effectively improve graduation attenuate efficient, attenuate efficient can reach 699 nm/minute, and is difficult for causing the damage to the attenuate machine.
Second purpose of the present invention also is to provide a kind of feasible production method for above-mentioned large screen thin film transistor (TFT) die set thinning liquid.
May further comprise the steps:
1) rare earth oxide particles is dispersed in the water, makes rare earth oxide suspension;
2) poly silicate is added in the suspension, make the mixing suspension of rare earth oxide, poly silicate;
3) the suspension mixed pH of adjustment rare earth oxide, poly silicate is 5～8;
4) mixing suspension with rare earth oxide, poly silicate is warming up to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, add water-soluble organic polymer of nonionic and organic acid, suspension mixed pH value to 5～8 of re-adjustment rare earth oxide, poly silicate; Wherein, the mass ratio of the water-soluble organic polymer of nonionic of rare earth oxide and adding is 1: 0.002～0.2, and the organic acid mass ratio of rare earth oxide and adding is 1: 0.002～0.2.
Technology of the present invention is simple, easy handling, convenient production, production efficiency height, constant product quality.
Among the present invention, rare earth oxide accounts for 0.001%～50% of reducer gross weight, 0.001%～50% poly silicate that the water-soluble organic polymer of nonionic accounts for the gross weight of reducer account for reducer gross weight 0.01%～50%, organic acid account for reducer gross weight 0.001%～20%.
The mass ratio of step 1) middle-weight rare earths oxide compound and water is 1: 3～30.
Step 2) mass ratio of middle-weight rare earths oxide compound and poly silicate is 1: 0.1～20.
In addition, in the aforementioned production method, after the step 4), can be again add additive to the mixing suspension of rare earth oxide, poly silicate, described additive is organophosphate or organic amine or hydramine or polyacrylic acid or urethane or inorganic soluble silicon aluminate, adding the purpose of stating additive is to improve the rheological of reducer, can make the higher reducer of suspension.
The mass ratio of rare earth oxide and described additive is 1: 0.001～0.1.
Embodiment
Embodiment one:
1, preparation method:
Take by weighing 750 gram rare earth oxides, add in the 4517 gram water, stir under the room temperature, make rare earth oxide suspension.Add the poly silicate of 500 gram mol ratios 2.1 (as water glass Na to rare earth oxide suspension 2O.nSiO 2Or K 2O.nSiO 2), stir evenly, make rare earth oxide, poly silicate mixing suspension.Adopt phosphorus acid for adjusting pH value to 8.
Rare earth oxide, poly silicate mix suspending liquid temp are risen to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, adopt phosphoric acid that pH is transferred to 8 again.
In order to make the higher reducer of suspension property, also can be again add 200 grams to rare earth oxide, the poly silicate mixing suspension of pH=8,400 grams, the water-soluble organic polymer of nonionic of 500 grams is as organic phosphoric acid ester or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane.Add oxalic acid or other organic acid 100 grams again, and the pH value is transferred to 7.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This series reducer attenuate speed is respectively 450,720,655, nm/minute, glass surface no marking, attenuate machine not damaged.
Embodiment two:
1, preparation method:
Take by weighing 350 gram rare earth oxides, add in the 3984 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 666 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8～12.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour 25℃, add the 300 water-soluble organic polymers of nonionic that restrain, as organic phosphoric acid ester or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane.Add phthalic acid 10,30 again, 50 grams, and 1 gram octane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 7.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This reducer attenuate speed is 526,821,649 nm/minute, glass surface no marking, attenuate machine not damaged.
Embodiment three:
1, preparation method
A: take by weighing 0.10 gram rare earth oxide, add in the 4933 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 100 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour 25℃, adopt hydrochloric acid adjust pH to 8 again.
B: take by weighing 2500 gram rare earth oxides, add in the 1167 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 1333 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjust pH 12 with hydrochloric acid again.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour 25℃, adopt hydrochloric acid adjust pH to 5 again.Take by weighing the above synthetic suspension of 200 grams, add 1800 gram water, stir, add the additive of 200 grams again, as organic phosphoric acid salt or organic amine or hydramine or poly-ring ethoxy alkane or polyacrylic acid or urethane or inorganic soluble silicon aluminate.Add para-amino benzoic acid 30 grams again, and 1 gram octane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 5.
C: take by weighing 350 gram rare earth oxides, add in the 2850 gram water, stir under the room temperature, make rare earth oxide suspension.Potassium silicate to rare earth oxide suspension adding 2500 gram mol ratios 2.1 further stirs evenly, and makes rare earth oxide, potassium silicate mixing suspension.Adjusting pH with hydrochloric acid again is 8～12.
Rare earth oxide, the suspension mixed temperature of potassium silicate are risen to 60 ℃, be cooled to again after being incubated 2 hours ± 0.2 hour 25℃, adopt hydrochloric acid adjust pH to 6. to add citric acid 30 grams more again, and 1 gram decane polyethylene oxide phosphoric acid ester.With hydrochloric acid adjust pH to 6.
2, application example:
With made sample attenuate on Logitech CDP thinning single surface machine.Press down: 1psi, lower wall and load plate rotating speed 50RPM, reducer flow velocity: 100ml/ minute.This series reducer attenuate speed is respectively and is A:411, B:935 (the polishing fluid polishing speed that adds benzaminic acid and octane polyethylene oxide phosphoric acid ester improves greatly), the C:823 nm/minute (adds citric acid, the polishing fluid polishing speed of decane polyethylene oxide phosphoric acid ester improves, and surfaceness reduces, surface brightness strengthens), glass surface no marking, attenuate machine not damaged.

Claims (3)

1. the production method of a large screen thin film transistor die set thinning liquid is characterized in that may further comprise the steps:
1) rare earth oxide particles is dispersed in the water, the mass ratio of described rare earth oxide and water is 1: 3～30, makes rare earth oxide suspension;
2) molecular weight is added in the suspension less than 200 poly silicate, the mass ratio of described rare earth oxide and poly silicate is 1: 0.1～20, makes the mixing suspension of rare earth oxide, poly silicate;
3) the suspension mixed pH of adjustment rare earth oxide, poly silicate is 5～8;
4) mixing suspension with rare earth oxide, poly silicate is warming up to 20～90 ℃, be incubated and be cooled to 10～25 ℃ after 0.1～6 hour, add molecular weight less than water-soluble organic polymer of 500 nonionic and organic acid, suspension mixed pH value to 5～8 of re-adjustment rare earth oxide, poly silicate; Wherein, the mass ratio of the water-soluble organic polymer of nonionic of rare earth oxide and adding is 1: 0.002～0.2, and the organic acid mass ratio of rare earth oxide and adding is 1: 0.002～0.2.
2. according to the production method of the described large screen thin film transistor die set thinning liquid of claim 1, after it is characterized in that step 4), mixing suspension to rare earth oxide, poly silicate adds additive again, and described additive is organophosphate or organic amine or hydramine or polyacrylic acid or urethane or inorganic soluble silicon aluminate.
3. according to the production method of the described large screen thin film transistor die set thinning liquid of claim 2, the mass ratio that it is characterized in that rare earth oxide and described additive is 1: 0.001～0.1.
CN2008100207783A 2008-02-26 2008-02-26 Production method of large-screen thin film transistor module thinning liquid Active CN101239785B (en)

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Publication number Priority date Publication date Assignee Title
CN102627916B (en) * 2012-03-23 2014-09-03 江苏中晶科技有限公司 Glass polishing solution with reinforcement function

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226623A (en) * 1979-02-19 1980-10-07 Fujimi Kenmazai Kogyo Co., Ltd. Method for polishing a single crystal or gadolinium gallium garnet
CN1288920A (en) * 1999-09-21 2001-03-28 不二见株式会社 Polishing composition
CN1748009A (en) * 2003-02-11 2006-03-15 卡伯特微电子公司 Mixed-abrasive polishing composition and method for using the same
CN1903962A (en) * 2006-08-14 2007-01-31 北京蓝景创新科技有限公司 Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder
CN1919950A (en) * 2006-08-23 2007-02-28 孙韬 High precision polishing liquid, preparation method and use thereof
CN1919949A (en) * 2006-08-23 2007-02-28 孙韬 High precision composite polishing liquid, preparation method and use thereof

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4226623A (en) * 1979-02-19 1980-10-07 Fujimi Kenmazai Kogyo Co., Ltd. Method for polishing a single crystal or gadolinium gallium garnet
CN1288920A (en) * 1999-09-21 2001-03-28 不二见株式会社 Polishing composition
CN1748009A (en) * 2003-02-11 2006-03-15 卡伯特微电子公司 Mixed-abrasive polishing composition and method for using the same
CN1903962A (en) * 2006-08-14 2007-01-31 北京蓝景创新科技有限公司 Preparation method of super fine precision polishing powder using ceriumdioxide as main body and polishing powder
CN1919950A (en) * 2006-08-23 2007-02-28 孙韬 High precision polishing liquid, preparation method and use thereof
CN1919949A (en) * 2006-08-23 2007-02-28 孙韬 High precision composite polishing liquid, preparation method and use thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
JP特开2000-8025A 2000.01.11
JP特开2005-239546A 2005.09.08

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Denomination of invention: Large screen thin film transistor die set thinning liquid and producing method thereof

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