CN101246869A - Chip flip packaging structure for reducing substrate warpage and manufacturing method thereof - Google Patents
Chip flip packaging structure for reducing substrate warpage and manufacturing method thereof Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 230000009477 glass transition Effects 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 15
- 230000008569 process Effects 0.000 description 12
- 230000017525 heat dissipation Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 239000003292 glue Substances 0.000 description 3
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- 239000000463 material Substances 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
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- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/921—Connecting a surface with connectors of different types
- H01L2224/9212—Sequential connecting processes
- H01L2224/92122—Sequential connecting processes the first connecting process involving a bump connector
- H01L2224/92125—Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
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- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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Abstract
一种降低基板翘曲的芯片倒装封装结构,其包括一基板、一芯片(realdie)、多个第一凸块、一虚芯片(dummy die)以及多个第二凸块。基板具有一第一表面以及与其相对的一第二表面。芯片位于基板的第一表面上,且具有一主动面。这些第一凸块配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。虚芯片位于基板的第二表面上,且对应于芯片。多个第二凸块配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。
A chip flip-chip packaging structure for reducing substrate warping includes a substrate, a chip (realdie), a plurality of first bumps, a dummy die, and a plurality of second bumps. The substrate has a first surface and a second surface opposite thereto. The chip is located on the first surface of the substrate and has an active surface. The first bumps are arranged between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate by the first bumps. The dummy chip is located on the second surface of the substrate and corresponds to the chip. The plurality of second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.
Description
技术领域 technical field
本发明是有关于一种芯片倒装封装结构及其制作方法,且特别是有关于一种适用于降低基板翘曲的芯片倒装封装结构及其制作方法。The invention relates to a chip flip-chip packaging structure and a manufacturing method thereof, and in particular to a chip flip-chip packaging structure suitable for reducing substrate warpage and a manufacturing method thereof.
背景技术 Background technique
芯片倒装封装为目前最广泛使用的半导体封装技术。在芯片倒装封装技术中,通常会形成一底胶(underfill)填充于倒装芯片与基板之间。而在进行烘烤工艺使底胶熟化时,由于基板与底胶的热膨胀系数不同,因此,会导致基板发生翘曲的情形。此外,在回焊(reflow)工艺后,晶粒与基板的热膨胀系数差异(CTE dismatch)也是造成基板翘曲的原因。为防止基板发生翘曲的情形,通常会在基板上设置散热片及散热环,以降低基板翘曲的程度。Flip-chip packaging is currently the most widely used semiconductor packaging technology. In the flip-chip packaging technology, an underfill is usually formed and filled between the flip-chip and the substrate. When performing a baking process to mature the primer, since the thermal expansion coefficients of the substrate and the primer are different, the substrate may be warped. In addition, after the reflow process, the difference in coefficient of thermal expansion (CTE dismatch) between the die and the substrate is also the cause of substrate warpage. In order to prevent the substrate from warping, heat sinks and heat dissipation rings are usually arranged on the substrate to reduce the degree of substrate warping.
图1所示为公知的一种芯片倒装封装结构的剖面示意图。请参考图1所示,此芯片倒装封装结构100主要包含一基板110、一倒装芯片120、一底胶130以及一散热板140。其中,基板110具有一上表面111以及一下表面112,而倒装芯片120位于基板110的上表面111。此倒装芯片120具有一主动面121以及一背面122。主动面121上形成有多个凸块123,以接合倒装芯片120与基板110。底胶130填充于倒装芯片120与基板110之间。而散热板140是由一导热接口物质124热耦合于倒装芯片120的背面122,以加强倒装芯片120的散热效果。且散热板140具有一结合部141,此结合部14是系以一黏着胶113结合于基板110的上表面111的周围。最后,于基板110的下表面112设置多个焊球150,以供外接一电路板。FIG. 1 is a schematic cross-sectional view of a known flip-chip packaging structure. Please refer to FIG. 1 , the flip-
虽然在基板110上设置具有结合部141的散热板140可降低基板110的翘曲现象,然而,散热板的使用对于大尺寸产品的翘曲状况的改善有限,且亦会导致生产成本的增加。此外,在封装工艺中需将散热板140的结合部141平整地贴附于基板110的上表面111亦增加工艺的困难度。Although disposing the
发明内容 Contents of the invention
本发明的目的是提供一种降低基板翘曲的覆晶封装结构及其制作方法,以解决覆晶封装结构中基板翘曲的问题。The object of the present invention is to provide a flip-chip packaging structure with reduced substrate warpage and a manufacturing method thereof, so as to solve the problem of substrate warpage in the flip-chip packaging structure.
为实现上述目的,本发明提出一种降低基板翘曲的覆晶封装结构,其包括一基板、一芯片(real die)、多个第一凸块、一虚芯片(dummy die)以及多个第二凸块。基板具有一第一表面以及与其相对的一第二表面。芯片是位于基板的第一表面上,且具有一主动面。这些第一凸块是配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。虚芯片是位于基板的第二表面上,且对应于芯片。多个第二凸块是配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。In order to achieve the above object, the present invention proposes a flip-chip packaging structure that reduces substrate warpage, which includes a substrate, a real die, a plurality of first bumps, a dummy die and a plurality of first bumps. Two bumps. The substrate has a first surface and a second surface opposite to it. The chip is located on the first surface of the substrate and has an active surface. The first bumps are disposed between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate through the first bumps. The dummy chip is located on the second surface of the substrate and corresponds to the chip. A plurality of second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.
在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.
在本发明的一实施例中,降低基板翘曲的覆晶封装结构还包括一第一底胶以及一第二底胶。第一底胶填充于芯片与基板的第一表面之间,并包覆上述第一凸块。而此第二底胶填充于虚芯片与基板的第二表面之间,且包覆上述第二凸块。In an embodiment of the present invention, the flip-chip packaging structure for reducing substrate warpage further includes a first primer and a second primer. The first primer is filled between the chip and the first surface of the substrate, and covers the first bump. The second primer is filled between the dummy chip and the second surface of the substrate, and covers the second bump.
在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.
本发明还提出一种降低基板翘曲的覆晶封装结构,其包括一基板、一芯片、多数个第一凸块、一第一底胶以及一第二底胶。基板具有一第一表面以及与其相对的一第二表面。芯片是位于基板的第一表面上,且具有一主动面。这些第一凸块是配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。第一底胶填充于芯片及基板的第一表面,且包覆上述第一凸块。第二底胶设置于基板的第二表面,且对应于第一底胶。其中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。The present invention also proposes a flip-chip packaging structure for reducing substrate warpage, which includes a substrate, a chip, a plurality of first bumps, a first primer and a second primer. The substrate has a first surface and a second surface opposite to it. The chip is located on the first surface of the substrate and has an active surface. The first bumps are disposed between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate through the first bumps. The first primer is filled on the chip and the first surface of the substrate, and covers the first bump. The second primer is disposed on the second surface of the substrate and corresponds to the first primer. Wherein, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.
在本发明的一实施例中,降低基板翘曲的覆晶封装结构还包括一虚芯片以及多个第二凸块。其中,虚芯片位于基板的第二表面上,且对应于芯片。而这些第二凸块配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。In an embodiment of the present invention, the flip-chip packaging structure for reducing substrate warpage further includes a dummy chip and a plurality of second bumps. Wherein, the dummy chip is located on the second surface of the substrate and corresponds to the chip. The second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.
在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.
本发明还提出一种降低基板翘曲的覆晶封装结构的制作方法,包括下列步骤。首先,提供一基板、一芯片以及一虚芯片。其中,此基板具有一第一表面以及与其相对的一第二表面,该芯片具有一主动面以及多数个配置于主动面上的第一凸块,且虚芯片的一表面上配置有多个第二凸块。之后,将芯片的主动面与基板的第一表面相对,并回焊这些第一凸块,使芯片由这些第一凸块而以芯片倒装接合的方式配置于基板的第一表面上。最后,将虚芯片配置于基板的第二表面上,并回焊这些第二凸块,使虚芯片由这些第二凸块而以芯片倒装接合的方式配置于基板的第二表面上。The present invention also proposes a manufacturing method of a flip-chip packaging structure that reduces substrate warpage, including the following steps. Firstly, a substrate, a chip and a dummy chip are provided. Wherein, the substrate has a first surface and a second surface opposite to it, the chip has an active surface and a plurality of first bumps arranged on the active surface, and a plurality of first bumps are arranged on one surface of the dummy chip. Two bumps. Afterwards, the active surface of the chip is opposed to the first surface of the substrate, and the first bumps are reflowed, so that the chip is arranged on the first surface of the substrate in a way of flip-chip bonding through the first bumps. Finally, the dummy chip is arranged on the second surface of the substrate, and the second bumps are soldered back, so that the dummy chip is arranged on the second surface of the substrate in a way of flip-chip bonding through the second bumps.
在本发明的一实施例中,芯片倒装封装结构的制作方法还包括下列步骤。首先,填充一第一底胶于芯片与基板的第一表面之间,以使第一底胶包覆这些第一凸块。之后,进行一加热工艺,以固化第一底胶。In an embodiment of the present invention, the manufacturing method of the flip-chip packaging structure further includes the following steps. Firstly, a first primer is filled between the chip and the first surface of the substrate, so that the first primer covers the first bumps. Afterwards, a heating process is performed to cure the first primer.
在本发明的一实施例中,芯片倒装封装结构的制作方法还包括下列步骤。首先,填充一第二底胶于虚芯片与基板的第二表面之间,以使第二底胶包覆这些第二凸块。之后,进行一加热工艺,以固化第二底胶。In an embodiment of the present invention, the manufacturing method of the flip-chip packaging structure further includes the following steps. First, a second primer is filled between the dummy chip and the second surface of the substrate, so that the second primer covers the second bumps. Afterwards, a heating process is performed to cure the second primer.
在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.
在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.
本发明还提出一种降低基板翘曲的覆晶封装结构的制作方法,包括下列步骤。首先,提供一基板以及一芯片。其中,此基板具有一第一表面以及与其相对的一第二表面;此芯片具有一主动面以及多数个配置于主动面上的第一凸块。之后,将芯片的主动面与基板的第一表面相对,并回焊这些第一凸块,使芯片由这些第一凸块而以覆晶接合的方式配置于基板的第一表面上。接下来,填充一第一底胶于芯片与基板的第一表面之间,以使第一底胶包覆这些第一凸块。之后,进行一加热工艺,以固化第一底胶。接着,于基板的第二表面上形成一对应于第一底胶的第二底胶。最后,进行一加热工艺,以固化第二底胶。The present invention also proposes a manufacturing method of a flip-chip packaging structure that reduces substrate warpage, including the following steps. Firstly, a substrate and a chip are provided. Wherein, the substrate has a first surface and a second surface opposite to it; the chip has an active surface and a plurality of first bumps arranged on the active surface. Afterwards, the active surface of the chip is opposed to the first surface of the substrate, and the first bumps are reflowed, so that the chip is arranged on the first surface of the substrate in a flip-chip bonding manner through the first bumps. Next, filling a first primer between the chip and the first surface of the substrate, so that the first primer covers the first bumps. Afterwards, a heating process is performed to cure the first primer. Next, a second primer corresponding to the first primer is formed on the second surface of the substrate. Finally, a heating process is performed to cure the second primer.
在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.
本发明的降低基板翘曲的覆晶封装结构及其制作方法主要是在基板的背面设置一与其芯片倒装接合的虚芯片及/或进行底胶的填充、烘烤工艺,使基板产生反向的翘曲,以抑制基板在经过回焊及点胶工艺后所产生的翘曲,进而解决公知的芯片倒装封装结构中基板翘曲的问题。The flip-chip packaging structure and its manufacturing method for reducing substrate warping of the present invention mainly include setting a dummy chip flip-chip bonded to the substrate on the back of the substrate and/or performing primer filling and baking processes to cause the substrate to reverse. The warping of the substrate can be suppressed after the reflow and glue dispensing process, and then the problem of substrate warping in the known flip-chip packaging structure can be solved.
附图说明 Description of drawings
图1为公知的一种芯片倒装封装结构的剖面示意图。FIG. 1 is a schematic cross-sectional view of a known flip-chip packaging structure.
图2A~2H为根据本发明的一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。2A-2H are schematic cross-sectional flow diagrams of a fabrication method of a flip-chip packaging structure with reduced substrate warpage according to an embodiment of the present invention.
图3A~3F为根据本发明的另一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。3A-3F are schematic cross-sectional flow diagrams of a manufacturing method of a flip-chip packaging structure with reduced substrate warpage according to another embodiment of the present invention.
附图中主要组件符号说明:Explanation of main component symbols in the attached drawings:
100:芯片倒装封装结构100: Chip flip-chip package structure
110:基板110: Substrate
111:上表面111: upper surface
112:下表面112: lower surface
113:黏着胶113: Adhesive glue
120:倒装芯片120: flip chip
121:主动面121: active side
122:背面122: back
123:凸块123: bump
130:底胶130: primer
140:散热板140: cooling plate
141:结合部141: Junction
210:基板210: Substrate
210a:第一表面210a: first surface
210b:第二表面210b: second surface
220:芯片220: chip
220a:主动面220a: active surface
222:第一凸块222: First bump
230:虚芯片230: virtual chip
230a:表面230a: surface
232:第二凸块232: second bump
240:第一底胶240: the first primer
250、250’:第二底胶250, 250': second primer
具体实施方式 Detailed ways
为让本发明的上述和其它目的、特征和优点能更明显易懂,特举较佳实施例并配合附图作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited and described in detail with accompanying drawings as follows.
图2A~2H为根据本发明的一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。首先,请参考图2A所示,提供一基板210、一芯片220以及一虚芯片230。此基板210具有一第一表面210a以及与其相对的一第二表面210b;此芯片220具有一主动面220a以及多个配置于主动面220a上的第一凸块222;而虚芯片230的表面230a上配置有多个第二凸块232。2A-2H are schematic cross-sectional flow diagrams of a fabrication method of a flip-chip packaging structure with reduced substrate warpage according to an embodiment of the present invention. First, as shown in FIG. 2A , a
之后,如图2B所示,将芯片220的主动面220a与基板210的第一表面210a相对,并回焊这些第一凸块222,使芯片220由这些第一凸块222而以芯片倒装接合的方式配置于基板210的第一表面210a上。如图2B所示,由于基板210与芯片220的热膨胀系数不同,因此,基板210在经过回焊工艺后会有向下翘曲的现象。Afterwards, as shown in FIG. 2B, the
为改善基板210在经过回焊工艺后所产生的向下翘曲的现象,如图2C所示,本发明先将基板210倒置,之后,将虚芯片230配置于基板210的第二表面210b上,且回焊这些第二凸块232,使虚芯片230由这些第二凸块232而以芯片倒装接合的方式配置于基板210的第二表面210b上。如图2D所示,由于基板210与虚芯片230的热膨胀系数不同,所以,基板210在经过回焊工艺后同样会有向下翘曲的现象,而即可由此克服先前图2B中基板210所产生的翘曲,并将基板210扳平。如此,即完成本发明的降低基板翘曲的芯片倒装封装结构的制作方法的大致流程。更进一步而言,虚芯片230配置于基板210的第二表面210b上的位置是对应于芯片220配置于基板210的第一表面210a上的位置,且虚芯片230的尺寸最好是小于芯片220的尺寸,以有助于将基板210原先所产生的翘曲扳平。In order to improve the downward warpage of the
为保护连接于基板210与芯片220之间的第一凸块222免于受损及受湖,在完成图2D所示的步骤后,如图2E所示,可于芯片220与基板210的第一表面210a之间填充一第一底胶240,以使第一底胶240包覆这些第一凸块222。之后,请参考图2F所示,进行一加热工艺,以固化此第一底胶240。In order to protect the
然而,第一底胶240在经过加热工艺后,如图2F所示,基板210会再度产生向下翘曲的现象。因此,请参考图2G所示,可先将基板210倒置,并于虚芯片230与基板210的第二表面210b之间填充一第二底胶250,以使第二底胶250包覆这些第二凸块232。之后,如图2H所示,进行一加热工艺,以固化此第二底胶250。由于第二底胶250在经过加热工艺后,基板210会再度产生向下翘曲的现象,所以,可由此克服先前图2F中基板210所产生的翘曲,并将基板210扳平。由于所选用的第二底胶250其材料特性会影响到基板210翘曲的程度,所以,使用者可选用具有不同玻璃化转换温度的第二底胶250,以改善并控制基板210翘曲的程度。在本发明的一实施例中,第二底胶250的玻璃化转换温度最好是大于第一底胶240的玻璃化转换温度。如此,在第二底胶250经过点胶、加热的工艺后,基板210所产生的翘曲程度可抑制第一底胶240烘烤后所产生的基板210翘曲的现象,进而将基板210扳平。However, after the
图3A~3F为根据本发明的另一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。首先,请参考图3A所示,提供一基板210以及一芯片220。此基板210具有一第一表面210a以及与其相对的一第二表面210b;而此芯片220具有一主动面220a以及多个配置于主动面220a上的第一凸块222。之后,请参考图3B所示,将芯片220的主动面220a与基板210的第一表面210a相对,并回焊这些第一凸块222,使芯片220由这些第一凸块222而以芯片倒装接合的方式配置于基板210的第一表面210a上。如图3B所示,由于基板210与芯片220的热膨胀系数不同,因此,基板210在经过回焊工艺后会有向下翘曲的现象。3A-3F are schematic cross-sectional flow diagrams of a manufacturing method of a flip-chip packaging structure with reduced substrate warpage according to another embodiment of the present invention. First, as shown in FIG. 3A , a
为保护连接于基板210与芯片220之间的第一凸块222免于受损及受潮,在完成图3B所示的步骤后,如图3C所示,在芯片220与基板210的第一表面210a之间填充一第一底胶240,以使第一底胶240包覆这些第一凸块222。之后,请参考图3D所示,进行一加热工艺,以固化此第一底胶240。如图3D所示,在经过第一底胶240的填充及加热工艺后,基板210向下翘曲的程度更为明显。In order to protect the
接下来,请参考图3E所示,于基板210的第二表面210b上形成一对应于第一底胶240的第二底胶250’。最后,请参考图3F所示,进行一加热工艺,固化此第二底胶250’,以此第二底胶250’的填充及加热工艺克服先前图3D的步骤中所造成的基板210翘曲的现象,进而将基板210扳平。Next, as shown in FIG. 3E , a second primer 250' corresponding to the
综上所述,本发明的降低基板翘曲的芯片倒装封装结构及其制作方法主要是在基板的背面设置一与其芯片倒装接合的虚芯片及/或进行底胶的填充、烘烤工艺,使基板产生反向的翘曲,以抑制基板在经过回焊及点胶工艺后所产生的翘曲,进而将基板扳平。此外,使用者可选择不同尺寸的虚芯片以及具有不同玻璃化转换温度的底胶,以控制基板反向翘曲的程度,进而将基板扳平。In summary, the flip-chip packaging structure and its manufacturing method for reducing substrate warpage of the present invention are mainly to arrange a dummy chip flip-chip bonded to the substrate on the back of the substrate and/or perform primer filling and baking processes , to make the substrate warp in the opposite direction, so as to suppress the warpage of the substrate after the reflow and glue dispensing process, and then level the substrate. In addition, users can choose different sizes of dummy chips and primers with different glass transition temperatures to control the degree of reverse warpage of the substrate, and then level the substrate.
虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,本领域技术人员在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视申请的权利要求范围所界定内容为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be subject to the content defined in the scope of claims of the application.
Claims (13)
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