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CN101246869A - Chip flip packaging structure for reducing substrate warpage and manufacturing method thereof - Google Patents

Chip flip packaging structure for reducing substrate warpage and manufacturing method thereof Download PDF

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Publication number
CN101246869A
CN101246869A CN 200810088588 CN200810088588A CN101246869A CN 101246869 A CN101246869 A CN 101246869A CN 200810088588 CN200810088588 CN 200810088588 CN 200810088588 A CN200810088588 A CN 200810088588A CN 101246869 A CN101246869 A CN 101246869A
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chip
substrate
primer
flip
bumps
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CN101246869B (en
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陈仁川
沈启智
邓仁棋
林希耘
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Advanced Semiconductor Engineering Inc
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Advanced Semiconductor Engineering Inc
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73201Location after the connecting process on the same surface
    • H01L2224/73203Bump and layer connectors
    • H01L2224/73204Bump and layer connectors the bump connector being embedded into the layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73253Bump and layer connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92Specific sequence of method steps
    • H01L2224/921Connecting a surface with connectors of different types
    • H01L2224/9212Sequential connecting processes
    • H01L2224/92122Sequential connecting processes the first connecting process involving a bump connector
    • H01L2224/92125Sequential connecting processes the first connecting process involving a bump connector the second connecting process involving a layer connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161Cap
    • H01L2924/1615Shape
    • H01L2924/16152Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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Abstract

一种降低基板翘曲的芯片倒装封装结构,其包括一基板、一芯片(realdie)、多个第一凸块、一虚芯片(dummy die)以及多个第二凸块。基板具有一第一表面以及与其相对的一第二表面。芯片位于基板的第一表面上,且具有一主动面。这些第一凸块配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。虚芯片位于基板的第二表面上,且对应于芯片。多个第二凸块配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。

Figure 200810088588

A chip flip-chip packaging structure for reducing substrate warping includes a substrate, a chip (realdie), a plurality of first bumps, a dummy die, and a plurality of second bumps. The substrate has a first surface and a second surface opposite thereto. The chip is located on the first surface of the substrate and has an active surface. The first bumps are arranged between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate by the first bumps. The dummy chip is located on the second surface of the substrate and corresponds to the chip. The plurality of second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.

Figure 200810088588

Description

降低基板翘曲的芯片倒装封装结构及其制作方法 Chip flip-chip packaging structure for reducing substrate warpage and manufacturing method thereof

技术领域 technical field

本发明是有关于一种芯片倒装封装结构及其制作方法,且特别是有关于一种适用于降低基板翘曲的芯片倒装封装结构及其制作方法。The invention relates to a chip flip-chip packaging structure and a manufacturing method thereof, and in particular to a chip flip-chip packaging structure suitable for reducing substrate warpage and a manufacturing method thereof.

背景技术 Background technique

芯片倒装封装为目前最广泛使用的半导体封装技术。在芯片倒装封装技术中,通常会形成一底胶(underfill)填充于倒装芯片与基板之间。而在进行烘烤工艺使底胶熟化时,由于基板与底胶的热膨胀系数不同,因此,会导致基板发生翘曲的情形。此外,在回焊(reflow)工艺后,晶粒与基板的热膨胀系数差异(CTE dismatch)也是造成基板翘曲的原因。为防止基板发生翘曲的情形,通常会在基板上设置散热片及散热环,以降低基板翘曲的程度。Flip-chip packaging is currently the most widely used semiconductor packaging technology. In the flip-chip packaging technology, an underfill is usually formed and filled between the flip-chip and the substrate. When performing a baking process to mature the primer, since the thermal expansion coefficients of the substrate and the primer are different, the substrate may be warped. In addition, after the reflow process, the difference in coefficient of thermal expansion (CTE dismatch) between the die and the substrate is also the cause of substrate warpage. In order to prevent the substrate from warping, heat sinks and heat dissipation rings are usually arranged on the substrate to reduce the degree of substrate warping.

图1所示为公知的一种芯片倒装封装结构的剖面示意图。请参考图1所示,此芯片倒装封装结构100主要包含一基板110、一倒装芯片120、一底胶130以及一散热板140。其中,基板110具有一上表面111以及一下表面112,而倒装芯片120位于基板110的上表面111。此倒装芯片120具有一主动面121以及一背面122。主动面121上形成有多个凸块123,以接合倒装芯片120与基板110。底胶130填充于倒装芯片120与基板110之间。而散热板140是由一导热接口物质124热耦合于倒装芯片120的背面122,以加强倒装芯片120的散热效果。且散热板140具有一结合部141,此结合部14是系以一黏着胶113结合于基板110的上表面111的周围。最后,于基板110的下表面112设置多个焊球150,以供外接一电路板。FIG. 1 is a schematic cross-sectional view of a known flip-chip packaging structure. Please refer to FIG. 1 , the flip-chip package structure 100 mainly includes a substrate 110 , a flip-chip 120 , a primer 130 and a heat sink 140 . Wherein, the substrate 110 has an upper surface 111 and a lower surface 112 , and the flip chip 120 is located on the upper surface 111 of the substrate 110 . The flip chip 120 has an active surface 121 and a back surface 122 . A plurality of bumps 123 are formed on the active surface 121 for bonding the flip chip 120 and the substrate 110 . The primer 130 is filled between the flip chip 120 and the substrate 110 . The heat dissipation plate 140 is thermally coupled to the back surface 122 of the flip chip 120 by a thermal interface material 124 to enhance the heat dissipation effect of the flip chip 120 . And the heat dissipation plate 140 has a joint part 141 , and the joint part 14 is combined with an adhesive 113 around the upper surface 111 of the substrate 110 . Finally, a plurality of solder balls 150 are disposed on the lower surface 112 of the substrate 110 for externally connecting a circuit board.

虽然在基板110上设置具有结合部141的散热板140可降低基板110的翘曲现象,然而,散热板的使用对于大尺寸产品的翘曲状况的改善有限,且亦会导致生产成本的增加。此外,在封装工艺中需将散热板140的结合部141平整地贴附于基板110的上表面111亦增加工艺的困难度。Although disposing the heat dissipation plate 140 with the bonding portion 141 on the substrate 110 can reduce the warpage of the substrate 110 , however, the use of the heat dissipation plate has limited improvement on the warpage of large-sized products, and also increases the production cost. In addition, the bonding portion 141 of the heat sink 140 needs to be evenly attached to the upper surface 111 of the substrate 110 during the packaging process, which also increases the difficulty of the process.

发明内容 Contents of the invention

本发明的目的是提供一种降低基板翘曲的覆晶封装结构及其制作方法,以解决覆晶封装结构中基板翘曲的问题。The object of the present invention is to provide a flip-chip packaging structure with reduced substrate warpage and a manufacturing method thereof, so as to solve the problem of substrate warpage in the flip-chip packaging structure.

为实现上述目的,本发明提出一种降低基板翘曲的覆晶封装结构,其包括一基板、一芯片(real die)、多个第一凸块、一虚芯片(dummy die)以及多个第二凸块。基板具有一第一表面以及与其相对的一第二表面。芯片是位于基板的第一表面上,且具有一主动面。这些第一凸块是配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。虚芯片是位于基板的第二表面上,且对应于芯片。多个第二凸块是配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。In order to achieve the above object, the present invention proposes a flip-chip packaging structure that reduces substrate warpage, which includes a substrate, a real die, a plurality of first bumps, a dummy die and a plurality of first bumps. Two bumps. The substrate has a first surface and a second surface opposite to it. The chip is located on the first surface of the substrate and has an active surface. The first bumps are disposed between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate through the first bumps. The dummy chip is located on the second surface of the substrate and corresponds to the chip. A plurality of second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.

在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.

在本发明的一实施例中,降低基板翘曲的覆晶封装结构还包括一第一底胶以及一第二底胶。第一底胶填充于芯片与基板的第一表面之间,并包覆上述第一凸块。而此第二底胶填充于虚芯片与基板的第二表面之间,且包覆上述第二凸块。In an embodiment of the present invention, the flip-chip packaging structure for reducing substrate warpage further includes a first primer and a second primer. The first primer is filled between the chip and the first surface of the substrate, and covers the first bump. The second primer is filled between the dummy chip and the second surface of the substrate, and covers the second bump.

在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.

本发明还提出一种降低基板翘曲的覆晶封装结构,其包括一基板、一芯片、多数个第一凸块、一第一底胶以及一第二底胶。基板具有一第一表面以及与其相对的一第二表面。芯片是位于基板的第一表面上,且具有一主动面。这些第一凸块是配置于芯片的主动面与基板的第一表面之间,使芯片由这些第一凸块电性连接于基板的第一表面。第一底胶填充于芯片及基板的第一表面,且包覆上述第一凸块。第二底胶设置于基板的第二表面,且对应于第一底胶。其中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。The present invention also proposes a flip-chip packaging structure for reducing substrate warpage, which includes a substrate, a chip, a plurality of first bumps, a first primer and a second primer. The substrate has a first surface and a second surface opposite to it. The chip is located on the first surface of the substrate and has an active surface. The first bumps are disposed between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the first surface of the substrate through the first bumps. The first primer is filled on the chip and the first surface of the substrate, and covers the first bump. The second primer is disposed on the second surface of the substrate and corresponds to the first primer. Wherein, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.

在本发明的一实施例中,降低基板翘曲的覆晶封装结构还包括一虚芯片以及多个第二凸块。其中,虚芯片位于基板的第二表面上,且对应于芯片。而这些第二凸块配置于虚芯片与基板的第二表面之间,使虚芯片由这些第二凸块连接于基板的第二表面。In an embodiment of the present invention, the flip-chip packaging structure for reducing substrate warpage further includes a dummy chip and a plurality of second bumps. Wherein, the dummy chip is located on the second surface of the substrate and corresponds to the chip. The second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps.

在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.

本发明还提出一种降低基板翘曲的覆晶封装结构的制作方法,包括下列步骤。首先,提供一基板、一芯片以及一虚芯片。其中,此基板具有一第一表面以及与其相对的一第二表面,该芯片具有一主动面以及多数个配置于主动面上的第一凸块,且虚芯片的一表面上配置有多个第二凸块。之后,将芯片的主动面与基板的第一表面相对,并回焊这些第一凸块,使芯片由这些第一凸块而以芯片倒装接合的方式配置于基板的第一表面上。最后,将虚芯片配置于基板的第二表面上,并回焊这些第二凸块,使虚芯片由这些第二凸块而以芯片倒装接合的方式配置于基板的第二表面上。The present invention also proposes a manufacturing method of a flip-chip packaging structure that reduces substrate warpage, including the following steps. Firstly, a substrate, a chip and a dummy chip are provided. Wherein, the substrate has a first surface and a second surface opposite to it, the chip has an active surface and a plurality of first bumps arranged on the active surface, and a plurality of first bumps are arranged on one surface of the dummy chip. Two bumps. Afterwards, the active surface of the chip is opposed to the first surface of the substrate, and the first bumps are reflowed, so that the chip is arranged on the first surface of the substrate in a way of flip-chip bonding through the first bumps. Finally, the dummy chip is arranged on the second surface of the substrate, and the second bumps are soldered back, so that the dummy chip is arranged on the second surface of the substrate in a way of flip-chip bonding through the second bumps.

在本发明的一实施例中,芯片倒装封装结构的制作方法还包括下列步骤。首先,填充一第一底胶于芯片与基板的第一表面之间,以使第一底胶包覆这些第一凸块。之后,进行一加热工艺,以固化第一底胶。In an embodiment of the present invention, the manufacturing method of the flip-chip packaging structure further includes the following steps. Firstly, a first primer is filled between the chip and the first surface of the substrate, so that the first primer covers the first bumps. Afterwards, a heating process is performed to cure the first primer.

在本发明的一实施例中,芯片倒装封装结构的制作方法还包括下列步骤。首先,填充一第二底胶于虚芯片与基板的第二表面之间,以使第二底胶包覆这些第二凸块。之后,进行一加热工艺,以固化第二底胶。In an embodiment of the present invention, the manufacturing method of the flip-chip packaging structure further includes the following steps. First, a second primer is filled between the dummy chip and the second surface of the substrate, so that the second primer covers the second bumps. Afterwards, a heating process is performed to cure the second primer.

在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.

在本发明的一实施例中,虚芯片的尺寸小于芯片的尺寸。In an embodiment of the invention, the size of the virtual chip is smaller than the size of the chip.

本发明还提出一种降低基板翘曲的覆晶封装结构的制作方法,包括下列步骤。首先,提供一基板以及一芯片。其中,此基板具有一第一表面以及与其相对的一第二表面;此芯片具有一主动面以及多数个配置于主动面上的第一凸块。之后,将芯片的主动面与基板的第一表面相对,并回焊这些第一凸块,使芯片由这些第一凸块而以覆晶接合的方式配置于基板的第一表面上。接下来,填充一第一底胶于芯片与基板的第一表面之间,以使第一底胶包覆这些第一凸块。之后,进行一加热工艺,以固化第一底胶。接着,于基板的第二表面上形成一对应于第一底胶的第二底胶。最后,进行一加热工艺,以固化第二底胶。The present invention also proposes a manufacturing method of a flip-chip packaging structure that reduces substrate warpage, including the following steps. Firstly, a substrate and a chip are provided. Wherein, the substrate has a first surface and a second surface opposite to it; the chip has an active surface and a plurality of first bumps arranged on the active surface. Afterwards, the active surface of the chip is opposed to the first surface of the substrate, and the first bumps are reflowed, so that the chip is arranged on the first surface of the substrate in a flip-chip bonding manner through the first bumps. Next, filling a first primer between the chip and the first surface of the substrate, so that the first primer covers the first bumps. Afterwards, a heating process is performed to cure the first primer. Next, a second primer corresponding to the first primer is formed on the second surface of the substrate. Finally, a heating process is performed to cure the second primer.

在本发明的一实施例中,第二底胶的玻璃化转换温度大于第一底胶的玻璃化转换温度。In an embodiment of the present invention, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer.

本发明的降低基板翘曲的覆晶封装结构及其制作方法主要是在基板的背面设置一与其芯片倒装接合的虚芯片及/或进行底胶的填充、烘烤工艺,使基板产生反向的翘曲,以抑制基板在经过回焊及点胶工艺后所产生的翘曲,进而解决公知的芯片倒装封装结构中基板翘曲的问题。The flip-chip packaging structure and its manufacturing method for reducing substrate warping of the present invention mainly include setting a dummy chip flip-chip bonded to the substrate on the back of the substrate and/or performing primer filling and baking processes to cause the substrate to reverse. The warping of the substrate can be suppressed after the reflow and glue dispensing process, and then the problem of substrate warping in the known flip-chip packaging structure can be solved.

附图说明 Description of drawings

图1为公知的一种芯片倒装封装结构的剖面示意图。FIG. 1 is a schematic cross-sectional view of a known flip-chip packaging structure.

图2A~2H为根据本发明的一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。2A-2H are schematic cross-sectional flow diagrams of a fabrication method of a flip-chip packaging structure with reduced substrate warpage according to an embodiment of the present invention.

图3A~3F为根据本发明的另一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。3A-3F are schematic cross-sectional flow diagrams of a manufacturing method of a flip-chip packaging structure with reduced substrate warpage according to another embodiment of the present invention.

附图中主要组件符号说明:Explanation of main component symbols in the attached drawings:

100:芯片倒装封装结构100: Chip flip-chip package structure

110:基板110: Substrate

111:上表面111: upper surface

112:下表面112: lower surface

113:黏着胶113: Adhesive glue

120:倒装芯片120: flip chip

121:主动面121: active side

122:背面122: back

123:凸块123: bump

130:底胶130: primer

140:散热板140: cooling plate

141:结合部141: Junction

210:基板210: Substrate

210a:第一表面210a: first surface

210b:第二表面210b: second surface

220:芯片220: chip

220a:主动面220a: active surface

222:第一凸块222: First bump

230:虚芯片230: virtual chip

230a:表面230a: surface

232:第二凸块232: second bump

240:第一底胶240: the first primer

250、250’:第二底胶250, 250': second primer

具体实施方式 Detailed ways

为让本发明的上述和其它目的、特征和优点能更明显易懂,特举较佳实施例并配合附图作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments are specifically cited and described in detail with accompanying drawings as follows.

图2A~2H为根据本发明的一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。首先,请参考图2A所示,提供一基板210、一芯片220以及一虚芯片230。此基板210具有一第一表面210a以及与其相对的一第二表面210b;此芯片220具有一主动面220a以及多个配置于主动面220a上的第一凸块222;而虚芯片230的表面230a上配置有多个第二凸块232。2A-2H are schematic cross-sectional flow diagrams of a fabrication method of a flip-chip packaging structure with reduced substrate warpage according to an embodiment of the present invention. First, as shown in FIG. 2A , a substrate 210 , a chip 220 and a dummy chip 230 are provided. The substrate 210 has a first surface 210a and a second surface 210b opposite thereto; the chip 220 has an active surface 220a and a plurality of first bumps 222 disposed on the active surface 220a; and the surface 230a of the dummy chip 230 A plurality of second bumps 232 are disposed thereon.

之后,如图2B所示,将芯片220的主动面220a与基板210的第一表面210a相对,并回焊这些第一凸块222,使芯片220由这些第一凸块222而以芯片倒装接合的方式配置于基板210的第一表面210a上。如图2B所示,由于基板210与芯片220的热膨胀系数不同,因此,基板210在经过回焊工艺后会有向下翘曲的现象。Afterwards, as shown in FIG. 2B, the active surface 220a of the chip 220 is opposed to the first surface 210a of the substrate 210, and these first bumps 222 are reflowed, so that the chip 220 is flip-chip by these first bumps 222. The bonding method is configured on the first surface 210 a of the substrate 210 . As shown in FIG. 2B , since the thermal expansion coefficients of the substrate 210 and the chip 220 are different, the substrate 210 will warp downward after the reflow process.

为改善基板210在经过回焊工艺后所产生的向下翘曲的现象,如图2C所示,本发明先将基板210倒置,之后,将虚芯片230配置于基板210的第二表面210b上,且回焊这些第二凸块232,使虚芯片230由这些第二凸块232而以芯片倒装接合的方式配置于基板210的第二表面210b上。如图2D所示,由于基板210与虚芯片230的热膨胀系数不同,所以,基板210在经过回焊工艺后同样会有向下翘曲的现象,而即可由此克服先前图2B中基板210所产生的翘曲,并将基板210扳平。如此,即完成本发明的降低基板翘曲的芯片倒装封装结构的制作方法的大致流程。更进一步而言,虚芯片230配置于基板210的第二表面210b上的位置是对应于芯片220配置于基板210的第一表面210a上的位置,且虚芯片230的尺寸最好是小于芯片220的尺寸,以有助于将基板210原先所产生的翘曲扳平。In order to improve the downward warpage of the substrate 210 after the reflow process, as shown in FIG. 2C , the present invention first turns the substrate 210 upside down, and then disposes the dummy chip 230 on the second surface 210 b of the substrate 210 , and these second bumps 232 are reflowed, so that the dummy chip 230 is disposed on the second surface 210b of the substrate 210 by flip-chip bonding through the second bumps 232 . As shown in FIG. 2D , since the thermal expansion coefficients of the substrate 210 and the dummy chip 230 are different, the substrate 210 will also warp downward after the reflow process, thereby overcoming the problem of the substrate 210 in FIG. 2B . The resulting warping and leveling of the substrate 210 . In this way, the general flow of the manufacturing method of the flip-chip packaging structure with reduced substrate warpage of the present invention is completed. Furthermore, the position of the virtual chip 230 disposed on the second surface 210b of the substrate 210 corresponds to the position of the chip 220 disposed on the first surface 210a of the substrate 210, and the size of the virtual chip 230 is preferably smaller than that of the chip 220 The size of the substrate 210 is helpful to equalize the original warping of the substrate 210 .

为保护连接于基板210与芯片220之间的第一凸块222免于受损及受湖,在完成图2D所示的步骤后,如图2E所示,可于芯片220与基板210的第一表面210a之间填充一第一底胶240,以使第一底胶240包覆这些第一凸块222。之后,请参考图2F所示,进行一加热工艺,以固化此第一底胶240。In order to protect the first bump 222 connected between the substrate 210 and the chip 220 from damage and damage, after the steps shown in FIG. 2D are completed, as shown in FIG. A first primer 240 is filled between a surface 210 a such that the first primer 240 covers the first bumps 222 . Afterwards, as shown in FIG. 2F , a heating process is performed to cure the first primer 240 .

然而,第一底胶240在经过加热工艺后,如图2F所示,基板210会再度产生向下翘曲的现象。因此,请参考图2G所示,可先将基板210倒置,并于虚芯片230与基板210的第二表面210b之间填充一第二底胶250,以使第二底胶250包覆这些第二凸块232。之后,如图2H所示,进行一加热工艺,以固化此第二底胶250。由于第二底胶250在经过加热工艺后,基板210会再度产生向下翘曲的现象,所以,可由此克服先前图2F中基板210所产生的翘曲,并将基板210扳平。由于所选用的第二底胶250其材料特性会影响到基板210翘曲的程度,所以,使用者可选用具有不同玻璃化转换温度的第二底胶250,以改善并控制基板210翘曲的程度。在本发明的一实施例中,第二底胶250的玻璃化转换温度最好是大于第一底胶240的玻璃化转换温度。如此,在第二底胶250经过点胶、加热的工艺后,基板210所产生的翘曲程度可抑制第一底胶240烘烤后所产生的基板210翘曲的现象,进而将基板210扳平。However, after the first primer 240 is heated, as shown in FIG. 2F , the substrate 210 will warp downward again. Therefore, as shown in FIG. 2G, the substrate 210 can be turned upside down first, and a second primer 250 is filled between the dummy chip 230 and the second surface 210b of the substrate 210, so that the second primer 250 covers these first primers. Two bumps 232 . After that, as shown in FIG. 2H , a heating process is performed to cure the second primer 250 . Since the substrate 210 will warp downward again after the second primer 250 is heated, the warping of the substrate 210 in FIG. 2F can be overcome and the substrate 210 can be leveled. Since the material properties of the selected second primer 250 will affect the degree of warpage of the substrate 210, users can choose second primers 250 with different glass transition temperatures to improve and control the warpage of the substrate 210. degree. In an embodiment of the present invention, the glass transition temperature of the second primer 250 is preferably higher than the glass transition temperature of the first primer 240 . In this way, after the process of dispensing and heating the second primer 250, the degree of warping of the substrate 210 can suppress the phenomenon of warping of the substrate 210 after the first primer 240 is baked, thereby leveling the substrate 210 .

图3A~3F为根据本发明的另一实施例的一种降低基板翘曲的芯片倒装封装结构的制作方法的流程剖面示意图。首先,请参考图3A所示,提供一基板210以及一芯片220。此基板210具有一第一表面210a以及与其相对的一第二表面210b;而此芯片220具有一主动面220a以及多个配置于主动面220a上的第一凸块222。之后,请参考图3B所示,将芯片220的主动面220a与基板210的第一表面210a相对,并回焊这些第一凸块222,使芯片220由这些第一凸块222而以芯片倒装接合的方式配置于基板210的第一表面210a上。如图3B所示,由于基板210与芯片220的热膨胀系数不同,因此,基板210在经过回焊工艺后会有向下翘曲的现象。3A-3F are schematic cross-sectional flow diagrams of a manufacturing method of a flip-chip packaging structure with reduced substrate warpage according to another embodiment of the present invention. First, as shown in FIG. 3A , a substrate 210 and a chip 220 are provided. The substrate 210 has a first surface 210a and a second surface 210b opposite thereto; and the chip 220 has an active surface 220a and a plurality of first bumps 222 disposed on the active surface 220a. Afterwards, please refer to FIG. 3B, the active surface 220a of the chip 220 is opposed to the first surface 210a of the substrate 210, and these first bumps 222 are reflowed, so that the chip 220 is flipped by these first bumps 222. It is disposed on the first surface 210 a of the substrate 210 in a mounting and bonding manner. As shown in FIG. 3B , since the thermal expansion coefficients of the substrate 210 and the chip 220 are different, the substrate 210 will warp downward after the reflow process.

为保护连接于基板210与芯片220之间的第一凸块222免于受损及受潮,在完成图3B所示的步骤后,如图3C所示,在芯片220与基板210的第一表面210a之间填充一第一底胶240,以使第一底胶240包覆这些第一凸块222。之后,请参考图3D所示,进行一加热工艺,以固化此第一底胶240。如图3D所示,在经过第一底胶240的填充及加热工艺后,基板210向下翘曲的程度更为明显。In order to protect the first bump 222 connected between the substrate 210 and the chip 220 from damage and moisture, after the steps shown in FIG. 3B are completed, as shown in FIG. A first primer 240 is filled between the 210 a, so that the first primer 240 covers the first bumps 222 . Afterwards, as shown in FIG. 3D , a heating process is performed to cure the first primer 240 . As shown in FIG. 3D , after the filling and heating processes of the first primer 240 , the degree of downward warping of the substrate 210 is more obvious.

接下来,请参考图3E所示,于基板210的第二表面210b上形成一对应于第一底胶240的第二底胶250’。最后,请参考图3F所示,进行一加热工艺,固化此第二底胶250’,以此第二底胶250’的填充及加热工艺克服先前图3D的步骤中所造成的基板210翘曲的现象,进而将基板210扳平。Next, as shown in FIG. 3E , a second primer 250' corresponding to the first primer 240 is formed on the second surface 210b of the substrate 210. Finally, as shown in FIG. 3F , a heating process is performed to cure the second primer 250 ′, so that the filling and heating process of the second primer 250 ′ overcomes the warpage of the substrate 210 caused in the previous step of FIG. 3D phenomenon, and then level the substrate 210 .

综上所述,本发明的降低基板翘曲的芯片倒装封装结构及其制作方法主要是在基板的背面设置一与其芯片倒装接合的虚芯片及/或进行底胶的填充、烘烤工艺,使基板产生反向的翘曲,以抑制基板在经过回焊及点胶工艺后所产生的翘曲,进而将基板扳平。此外,使用者可选择不同尺寸的虚芯片以及具有不同玻璃化转换温度的底胶,以控制基板反向翘曲的程度,进而将基板扳平。In summary, the flip-chip packaging structure and its manufacturing method for reducing substrate warpage of the present invention are mainly to arrange a dummy chip flip-chip bonded to the substrate on the back of the substrate and/or perform primer filling and baking processes , to make the substrate warp in the opposite direction, so as to suppress the warpage of the substrate after the reflow and glue dispensing process, and then level the substrate. In addition, users can choose different sizes of dummy chips and primers with different glass transition temperatures to control the degree of reverse warpage of the substrate, and then level the substrate.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,本领域技术人员在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视申请的权利要求范围所界定内容为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Those skilled in the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, the present invention The scope of protection shall be subject to the content defined in the scope of claims of the application.

Claims (13)

1、一种降低基板翘曲的芯片倒装封装结构,其特征在于,包括:1. A flip-chip packaging structure that reduces substrate warpage, characterized in that it includes: 基板,具有第一表面以及与其相对的第二表面;a substrate having a first surface and a second surface opposite thereto; 芯片,位于所述基板的该第一表面上,且具有一主动面;a chip located on the first surface of the substrate and having an active surface; 多数个第一凸块,配置于所述芯片的所述主动面与所述基板的所述第一表面之间,使所述芯片由所述的第一凸块电性连接于所述基板的所述第一表面;A plurality of first bumps are arranged between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to the substrate by the first bumps said first surface; 虚芯片,位于所述基板的所述第二表面上,且对应所述芯片;以及a dummy chip located on the second surface of the substrate and corresponding to the chip; and 多数个第二凸块,配置于所述虚芯片与所述基板的所述第二表面之间,使所述虚芯片由所述第二凸块连接于所述基板的所述第二表面。A plurality of second bumps are arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second surface of the substrate by the second bumps. 2、如权利要求1所述的降低基板翘曲的芯片倒装封装结构,其特征在于,所述虚芯片的尺寸小于所述芯片的尺寸。2. The flip-chip packaging structure for reducing substrate warpage according to claim 1, wherein the size of the dummy chip is smaller than the size of the chip. 3、如权利要求1所述的降低基板翘曲的芯片倒装封装结构,其特征在于,包括第一底胶以及第二底胶,其中所述第一底胶填充于所述芯片与所述基板的第一表面之间,并包覆所述第一凸块,而所述第二底胶填充于所述虚芯片与所述基板的第二表面之间,且包覆所述第二凸块。3. The flip-chip packaging structure for reducing substrate warpage according to claim 1, characterized in that it comprises a first primer and a second primer, wherein the first primer is filled between the chip and the between the first surface of the substrate and cover the first bump, and the second primer is filled between the dummy chip and the second surface of the substrate and covers the second bump piece. 4、如权利要求3所述的降低基板翘曲的芯片倒装封装结构,其特征在于,所述第二底胶的玻璃化转换温度大于所述第一底胶的玻璃化转换温度。4 . The flip-chip packaging structure for reducing substrate warpage according to claim 3 , wherein the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer. 5、一种降低基板翘曲的芯片倒装封装结构,其特征在于,包括:5. A flip-chip packaging structure that reduces substrate warpage, characterized in that it includes: 基板,具有第一表面以及与其相对的第二表面;a substrate having a first surface and a second surface opposite thereto; 芯片,位于所述基板的所述第一表面上,且具有主动面;a chip located on the first surface of the substrate and having an active surface; 多数个第一凸块,配置于所述芯片的所述主动面与所述基板的所述第一表面之间,使所述芯片由所述第一凸块电性连接于所述基板的所述第一表面;A plurality of first bumps are arranged between the active surface of the chip and the first surface of the substrate, so that the chip is electrically connected to all the substrates by the first bumps the first surface; 第一底胶,填充于所述芯片及所述基板的所述第一表面,及包覆所述第一凸块;以及a first primer, filled in the chip and the first surface of the substrate, and covering the first bump; and 第二底胶,设置于所述基板的所述第二表面,且对应于所述第一底胶,其中所述第二底胶的玻璃化转换温度大于所述第一底胶的玻璃化转换温度。A second primer, disposed on the second surface of the substrate, and corresponding to the first primer, wherein the glass transition temperature of the second primer is greater than the glass transition temperature of the first primer temperature. 6、如权利要求5所述的降低基板翘曲的芯片倒装封装结构,其特征在于,包括一虚芯片以及多个第二凸块,其中所述虚芯片位于所述基板的所述第二表面上,且对应所述芯片,而所述第二凸块配置于所述虚芯片与所述基板的所述第二表面之间,使所述虚芯片由所述第二凸块连接于所述基板的所述第二表面。6. The flip-chip packaging structure for reducing substrate warpage according to claim 5, characterized in that it comprises a dummy chip and a plurality of second bumps, wherein the dummy chip is located on the second bump of the substrate. surface, and corresponding to the chip, and the second bump is arranged between the dummy chip and the second surface of the substrate, so that the dummy chip is connected to the second bump by the second bump The second surface of the substrate. 7、如权利要求6所述的降低基板翘曲的芯片倒装封装结构,其特征在于,所述虚芯片的尺寸小于所述芯片的尺寸。7. The flip-chip packaging structure for reducing substrate warpage according to claim 6, wherein the size of the dummy chip is smaller than the size of the chip. 8、一种降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,包括:8. A method for manufacturing a flip-chip packaging structure that reduces substrate warpage, characterized in that it includes: 提供基板、芯片以及虚芯片,其中所述基板具有第一表面以及与其相对的第二表面,所述芯片具有主动面以及多数个配置于所述主动面上的第一凸块,且所述虚芯片的表面上配置有多数个第二凸块;A substrate, a chip and a dummy chip are provided, wherein the substrate has a first surface and a second surface opposite thereto, the chip has an active surface and a plurality of first bumps arranged on the active surface, and the dummy A plurality of second bumps are arranged on the surface of the chip; 将所述芯片的所述主动面与所述基板的所述第一表面相对,并回焊所述第一凸块,使所述芯片由所述第一凸块而以芯片倒装接合的方式配置于所述基板的所述第一表面上;以及The active surface of the chip is opposite to the first surface of the substrate, and the first bump is reflowed, so that the chip is flip-chip bonded by the first bump disposed on the first surface of the substrate; and 将所述虚芯片配置于所述基板的所述第二表面上,并回焊所述第二凸块,使所述虚芯片由所述第二凸块而以芯片倒装接合的方式配置于所述基板的所述第二表面上。Disposing the dummy chip on the second surface of the substrate, and reflowing the second bumps, so that the dummy chip is flip-chip bonded by the second bumps on the on the second surface of the substrate. 9、如权利要求8所述的降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,包括:9. The manufacturing method of flip-chip packaging structure for reducing substrate warpage according to claim 8, characterized in that it comprises: 填充第一底胶于所述芯片与所述基板的所述第一表面之间,以使所述第一底胶包覆所述第一凸块;filling a first primer between the chip and the first surface of the substrate, so that the first primer covers the first bump; 进行加热工艺,以固化所述第一底胶;performing a heating process to cure the first primer; 填充第二底胶于所述虚芯片与所述基板的所述第二表面之间,以使所述第二底胶包覆所述第二凸块;以及filling a second primer between the dummy chip and the second surface of the substrate, so that the second primer covers the second bump; and 进行加热工艺,以固化所述第二底胶。A heating process is performed to cure the second primer. 10、如权利要求9所述的降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,所述第二底胶的玻璃化转换温度大于所述第一底胶的玻璃化转换温度。10. The manufacturing method of flip-chip package structure for reducing substrate warpage according to claim 9, characterized in that the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer . 11、如权利要求8所述的降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,所述虚芯片的尺寸小所述芯片的尺寸。11. The manufacturing method of flip-chip packaging structure with reduced substrate warpage according to claim 8, characterized in that the size of the dummy chip is smaller than the size of the chip. 12、一种降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,包括:12. A method for manufacturing a flip-chip packaging structure that reduces substrate warpage, characterized in that it includes: 提供基板以及芯片,其中所述基板具有第一表面以及与其相对的第二表面,所述芯片具有一主动面以及多数个配置于所述主动面上的第一凸块;A substrate and a chip are provided, wherein the substrate has a first surface and a second surface opposite thereto, and the chip has an active surface and a plurality of first bumps arranged on the active surface; 将所述芯片的所述主动面与所述基板的所述第一表面相对,并回焊所述第一凸块,使所述芯片由所述第一凸块而以芯片倒装接合的方式配置于所述基板的该第一表面上;The active surface of the chip is opposite to the first surface of the substrate, and the first bump is reflowed, so that the chip is flip-chip bonded by the first bump configured on the first surface of the substrate; 填充第一底胶于所述芯片与所述基板的所述第一表面之间,以使所述第一底胶包覆所述第一凸块;filling a first primer between the chip and the first surface of the substrate, so that the first primer covers the first bump; 进行加热工艺,以固化所述第一底胶;performing a heating process to cure the first primer; 于所述基板的所述第二表面上形成一对应于所述第一底胶的第二底胶;以及forming a second primer corresponding to the first primer on the second surface of the substrate; and 进行加热工艺,以固化该第二底胶。A heating process is performed to cure the second primer. 13、如权利要求12所述的降低基板翘曲的芯片倒装封装结构的制作方法,其特征在于,所述第二底胶的玻璃化转换温度大于所述第一底胶的玻璃化转换温度。13. The manufacturing method of flip-chip packaging structure for reducing substrate warpage according to claim 12, characterized in that, the glass transition temperature of the second primer is higher than the glass transition temperature of the first primer .
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Publication number Priority date Publication date Assignee Title
CN112038300A (en) * 2019-06-04 2020-12-04 中芯长电半导体(江阴)有限公司 Semiconductor packaging structure and preparation method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112038300A (en) * 2019-06-04 2020-12-04 中芯长电半导体(江阴)有限公司 Semiconductor packaging structure and preparation method thereof

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