CN101350346A - Light emitting device and manufacturing method thereof - Google Patents

Abstract

A light-emitting device and its manufacturing method, wherein the light-emitting device (100) includes: a light-emitting element (101), a package for disposing the light-emitting element (101), and a conductive electrode for connecting electrodes arranged on the package and electrodes of the light-emitting element The lead wire (106); the package includes: a support portion (108), and a light-transmitting member (107) covering at least the light-emitting element (101); A recess (103) of a semiconductor element (102) different from a light-emitting element; a cavity (111) is enclosed between a light-transmitting member (107) covering an opening of the recess (103) and an inner wall of the recess (103).

Description

Light emitting device and manufacturing method thereof

technical field

The present invention relates to a light-emitting device used for lighting fixtures, displays, backlights of mobile phones, auxiliary light sources for animation lighting, other light sources, etc., and a manufacturing method thereof.

Background technique

A light-emitting device using a light-emitting element such as a light-emitting diode emits brightly colored light with a small size and excellent power efficiency. In addition, such a light-emitting element is different from a light bulb and the like, and there is no need to worry about the bulb being broken. In addition, it is characterized by excellent initial drive characteristics, resistance to vibrations, and repeated operations of switching lamps on and off. Due to such excellent characteristics, light-emitting devices using light-emitting elements such as light-emitting diodes (LEDs) and laser diodes (LDs) are used as light sources such as lighting fixtures and backlights of mobile phones.

In such a light emitting device, in order to protect the light emitting element from damage caused by overvoltage, a protection element such as a Zener diode is mounted on the light emitting device. Such a protective element is arranged adjacent to the light emitting element on a support substrate on which the light emitting element is mounted, and is electrically connected to the light emitting element.

For example, the light-emitting device disclosed in (Japanese) Unexamined Patent Publication No. 11-54804 includes: an insulating substrate provided with a first electrode and a second electrode having different polarities; An LED chip, a protective element (for example, a Zener diode) arranged on the second electrode, and an encapsulating resin covering the LED chip and conductive leads connected to the LED chip. Furthermore, one electrode of the LED chip is connected to the first electrode, and the other electrode is connected to the second electrode with lead wires, respectively. On the other hand, the electrode on the upper surface side of the protective element is connected to the first electrode with a conductive lead, and the electrode on the lower surface side is connected to the second electrode through a conductive adhesive.

In such a light-emitting device, since light from the light-emitting element is absorbed by the protective element or shielded by the protective element, the light extraction efficiency of the light-emitting device as a whole decreases. Therefore, if a concave portion is formed under the protective element, and the protective element is arranged in the concave portion so that the height of the protective element is lower than that of the light emitting element, light interruption by the protective element can be reduced.

Or, like the light-emitting device disclosed in (Japanese) Unexamined Patent Publication No. 2007-150229, by disposing a reflective member different from the light-transmitting member covering the light-emitting element between the light-emitting element and the protective element, the light from the light-emitting element The light is reflected out of the light-emitting device, so that the protective element does not hinder the passage of light extracted from the light-emitting element to the outside of the light-emitting device. In addition, considering the ease of handling when mounting a plurality of semiconductor elements on the support substrate, the recess for accommodating the protection element is preferably provided on the support substrate so as to have an opening on the same surface as the surface on which the light emitting elements are mounted.

However, when the protection element is placed in the recess formed lower than the mounting surface of the light emitting element, part of the light emitted from the end surface direction of the light emitting element placed above is enclosed in the recess. As a result, the extraction efficiency of light to the outside of the light emitting device decreases. Furthermore, when the body color of the protective element absorbs the light from the light-emitting element, the enclosed light is absorbed by the protective element, so that the output of the light-emitting device significantly decreases. In addition, it is impractical to bury the recess for housing the protective element with a light-reflective filler to prevent the intrusion of light into the recess, since it requires labor and material costs.

Contents of the invention

It is therefore an object of the present invention to provide a light emitting device having excellent reliability and optical characteristics, and furthermore, an object to provide a method for inexpensively manufacturing such a light emitting device.

In order to achieve the above object, the light-emitting device according to the present invention includes: a light-emitting element, a package for disposing the light-emitting element, and conductive leads for connecting electrodes provided on the package to electrodes of the light-emitting element, and the package includes: a support , and a light-transmitting member disposed on the support body, the support body has a mounting portion for disposing the above-mentioned light-emitting element and a recess for accommodating a semiconductor element different from the above-mentioned light-emitting element; the above-mentioned light-transmitting member covers at least the above-mentioned light-emitting element and The opening of the recess, the package has a cavity in the recess. Preferably, the cavity is provided between the bottom surface of the translucent member covering the opening and the upper surface of the semiconductor element housed in the recess.

In addition, a method for manufacturing a light-emitting device, the light-emitting device includes: a light-emitting element, a package for disposing the light-emitting element, and conductive leads for connecting electrodes provided on the package and electrodes of the light-emitting element; the package includes: At least the light-transmitting member of the above-mentioned light-emitting element, and a support body, the support body has a mounting portion on which the above-mentioned light-emitting element is arranged and a concave portion for accommodating a semiconductor element different from the above-mentioned light-emitting element; the manufacturing method of the light-emitting device includes the following steps: A step of forming a support having a recess opening on the upper surface on which the light-emitting element is mounted; a second step of disposing the upper surface of the semiconductor element below the upper surface of the mounting portion of the light-emitting element, and accommodating the semiconductor in the recess. element; the third step, disposing the above-mentioned light-emitting element and the above-mentioned conductive lead; the fourth step, forming a cavity in the above-mentioned concave portion, and disposing a light-transmitting member covering at least the above-mentioned light-emitting element and the opening of the above-mentioned concave portion on the above-mentioned support .

The above and further objects and features of the present invention will become clearer through the following detailed description in conjunction with the accompanying drawings.

Description of drawings

FIG. 1 is a top view schematically showing a light emitting device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically showing a cross-section of the light-emitting device along the II-II direction shown in FIG. 1 .

FIG. 3 is a cross-sectional view schematically showing a cross-section of the light-emitting device along the III-III direction shown in FIG. 1 .

Fig. 4 is a bottom view schematically showing a light emitting device in one embodiment of the present invention.

Fig. 5 is a perspective view schematically showing a light emitting device in one embodiment of the present invention.

Fig. 6 is a cross-sectional view schematically showing a cross-section of a light emitting device according to another embodiment of the present invention.

Symbol Description

100, 200 light emitting devices (light emitting device)

101a, 101b light emitting element (light emitting element)

102 semiconductor element (semiconductor element)

103 cavity (cavity)

104a first electrode

104b metal components (metallic component)

104c second electrode

105 first conductive lead

106 second wire linear lead

107 translucent member

108 support body (base)

109 mark (mark)

110a first external connection electrode

110c second external connection electrode

111 cavity (cavity)

112 Protuberance

Detailed ways

The light-emitting device has a protective element disposed on the bottom surface of the concave portion lower than the mounting surface of the light-emitting element, and further has a cavity in the concave portion in which the protective element is accommodated. Here, a difference in refractive index occurs between the translucent member covering the light emitting element and the cavity. Then, light radiated from the light emitting element or light from the phosphor is reflected to the outside of the light emitting device at these boundary surfaces having different refractive indices. That is, the present invention can improve the light extraction efficiency of the light-emitting device by using the cavity provided in the concave portion, compared with the prior art. In addition, these lights are extracted from the light emitting device without being lost in the concave portion, so that the variation in light distribution and chromaticity of the light emitting device is also reduced.

In the light-emitting device, a cavity formed by arranging a light-transmitting member on the support is provided in the concave portion in which the protective element is accommodated, thereby preventing the intrusion of light into the concave portion. Therefore, compared with a light-emitting device in which a light-reflective filler is embedded in a concave portion, or a light-emitting device in which a reflective member different from a light-transmitting member covering the light-emitting element is provided between the light-emitting element and the protective element, the present invention can be used as a An inexpensive light-emitting device with a relatively simple structure and less light loss due to the recess for housing the protective element.

In addition, the method of manufacturing the light-emitting device can be relatively simple and inexpensive compared with a light-emitting device in which a light-reflective filler is embedded in a recess for accommodating a protective element, or a light-emitting device in which a reflective member is provided between a light-emitting element and a protective element. A light emitting device with less light loss in the concave portion is formed. Furthermore, in the method of manufacturing a light emitting device according to the present invention, air bubbles can also be left in the concave portion having a bottom surface lower than the mounting surface of the light emitting element at the same time through the step of forming a translucent member covering the light emitting element on the support. Therefore, a light-emitting device with less light loss in the recess can be produced relatively simply and inexpensively.

Preferably, the cavity formed in the package recess of the light emitting device is provided between the bottom surface of the translucent member covering the opening and the upper surface of the semiconductor element housed in the recess.

In addition, it is preferable that the translucent member has a convex protrusion from the opening of the recess toward the bottom surface of the recess.

Furthermore, it is preferable that the concave portion is provided in a region sandwiched by a plurality of mounting portions of the light emitting element, and that the support body is respectively provided with external connection electrodes substantially immediately below the mounting portions.

Furthermore, it is preferable that the similarity ratio between the outline of the opening of the recess in plan view and the appearance of the semiconductor element housed in the recess in plan view is 1.0 to 2.5.

Furthermore, it is preferable that the fourth step includes a step of continuously supplying the material of the light-transmitting member in a direction substantially parallel to the mounting surface of the light-emitting element.

Furthermore, it is preferable that the viscosity of the material of the translucent member is adjusted in the fourth step according to the size of the concave portion corresponding to the size of the semiconductor element so that air bubbles remain in the concave portion.

Furthermore, it is preferable that the material of the above-mentioned translucent member is a material containing at least one resin selected from silicone resin or epoxy resin, and the resin contains a particulate phosphor.

Furthermore, it is preferable that the viscosity of the material of the said translucent member is 200 Pa·s or more and 500 Pa·s or less.

And, it is preferable that the similarity ratio between the shape of the opening of the above-mentioned concave portion in plan view and the shape of the semiconductor element accommodated in the above-mentioned concave portion is from 1.0 to 2.5, and the ratio of the depth of the above-mentioned concave portion to the height of the semiconductor element accommodated in the above-mentioned concave portion is From 1.0 to 2.14.

For a light-emitting device including a light-emitting element, a package for disposing the light-emitting element, and conductive leads connecting electrodes provided on the package and electrodes of the light-emitting element, wherein the package includes a support and a light-transmitting member covering at least the light-emitting element The support has a mounting portion on which a light-emitting element is placed and a recess for accommodating a semiconductor element different from the light-emitting element. The present inventors conducted various studies in order to reduce light loss caused by the recess. As a result, the problem can be solved by covering the opening of the recess housing the semiconductor element different from the light-emitting element with a part of the light-transmitting member covering the light-emitting element to form a package in which a cavity is provided in the recess. In the present invention, by having a cavity in the concave portion, a difference in refractive index is generated between the light-transmitting member covering the opening of the concave portion and the cavity. Then, using these boundary surfaces with different refractive indices as reflective surfaces, light is reflected and emitted from the light emitting device. In this way, the present invention does not cause light loss in the concave portion, so that the light extraction efficiency of the light emitting device is improved compared with the prior art.

Furthermore, it is preferable that the cavity in the package of the light emitting device is provided between the bottom surface of the translucent member covering the opening of the recess and the upper surface of the semiconductor element housed in the recess. This is because it is possible to suppress light propagating through the translucent member from being absorbed by the semiconductor element housed in the concave portion.

Preferably, the translucent member has a protrusion at the opening of the recess, and the protrusion has a bottom surface that is convex toward the bottom surface of the recess. This is because such a protruding portion prevents light from entering the concave portion and enhances the effect of reflecting toward the light-transmitting member on the upper surface of the support. In addition, it is preferable to provide a cavity between the bottom surface of the translucent member or its protruding portion, and the upper surface of the semiconductor element accommodated in the concave portion. By providing a gap between the bottom surface of the light-transmitting member and the upper surface of the semiconductor element due to the cavity, the light outside the recess will not be irradiated in the direction of the semiconductor element, and will not be disturbed by the semiconductor element accommodated in the recess. suffered losses.

Preferably, the similarity ratio between the shape of the opening of the recess in plan view and the shape of the semiconductor element housed in the recess in plan view is 1.0 to 2.5. This is because if the size of the opening of the recess is too large relative to the size of the semiconductor element, more light enters the recess. Also, if the size of the opening is too small relative to the size of the semiconductor element, the workability of the step of arranging the semiconductor element in the recess decreases, so that a light-emitting device with good mass productivity cannot be produced.

Regarding the method of manufacturing a light-emitting device, the light-emitting device includes: a light-emitting element, a package for disposing the light-emitting element, and conductive leads that connect electrodes provided on the package with the electrodes of the light-emitting element, and the package includes: A light-transmitting member and a support having a mounting portion on which a light-emitting element is arranged and a recess for accommodating a semiconductor element different from the light-emitting element are provided. In order to manufacture a light-emitting device with less light loss in the recess relatively simply and at low cost, the present invention Various studies have been conducted. As a result, the method for manufacturing a light-emitting device is characterized by including the following steps: a first step of forming a recess having an opening on a mounting surface of a light-emitting element on a support; The upper surface of the semiconductor element is arranged low, and the semiconductor element is accommodated in the recess; the third step is to arrange the light-emitting element and the conductive lead; the fourth step is to form a cavity in the recess, and arrange an opening covering at least the light-emitting element and the recess on the support The internal light-transmitting member solves the problem. That is, since the method of manufacturing a light emitting device does not require embedding a light-reflective filler in a recess for accommodating a semiconductor element, a light emitting device with less light loss in the recess can be manufactured relatively simply and inexpensively.

In addition, in the method of manufacturing a light-emitting device, the steps of manufacturing a light-emitting device can be simplified by performing the formation of the light-transmitting member on the support and the formation of the cavity in the same step. When using such a method, the fourth step of forming the light-transmitting member includes a step of continuously supplying the material of the light-transmitting member in a direction substantially parallel to the mounting surface of the light-emitting element. That is, a fluid material of the translucent member is poured in a direction substantially parallel to the mounting surface on which the light emitting element is disposed, molded into a mold, and cured to form the translucent member. In addition, "approximately parallel" means that a range of about ±10° is an allowable range for a surface parallel to the mounting surface of the light emitting element.

The viscosity of the material of the light-transmitting member is adjusted in the fourth step according to the size of the semiconductor element to be accommodated and the concave portion, so that air bubbles remain to form cavities. For example, the size and depth of the recess are preferred, and the similarity ratio between the profile of the opening of the recess and the profile of the semiconductor element accommodated in the recess is from 1.0 to 2.5, and the depth D of the recess is in relation to the semiconductor element contained in the recess. The ratio of height H (D/H) is from 1.0 to 2.14. This is to reduce the size of the air bubbles to the minimum required regardless of the reduction in the reliability of the light emitting device.

Furthermore, the viscosity of the material of the translucent member is preferably not less than 200 Pa·s and not more than 500 Pa·s. This is because, if the viscosity is low, no cavity is formed in the concave portion in which the semiconductor element is accommodated, and the concave portion is filled with the material of the light-transmitting member. On the other hand, if the viscosity is too high, the workability of the step of arranging the material of the translucent member will decrease.

In addition, by adjusting the viscosity of the material of the translucent member, the material extends convexly from the opening of the recess to the bottom of the recess, thereby forming the protruding portion of the translucent member at the opening of the recess. Accordingly, it is possible to manufacture a light emitting device in which a cavity is provided between the convex bottom surface of the protruding portion of the translucent member and the upper surface of the semiconductor element housed in the concave portion.

The material of the translucent member is preferably a material containing at least one resin selected from silicone resins and epoxy resins, and the resin contains particulate phosphors. This is because the viscosity of the resin containing the particulate phosphor can be easily adjusted by adjusting the content of the particulate phosphor in the resin, and the cavity can be easily formed in a light-emitting device including the phosphor in the light-transmitting member. .

Through the following detailed description combined with the accompanying drawings, the above and below objects and features of the present invention will be more clearly.

FIG. 1 is a top view schematically showing a light emitting device according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view schematically showing a cross-section of the light-emitting device along the II-II direction shown in FIG. 1 .

FIG. 3 is a cross-sectional view schematically showing a cross-section of the light-emitting device along the III-III direction shown in FIG. 1 .

Fig. 4 is a bottom view schematically showing a light emitting device in one embodiment of the present invention.

Fig. 5 is a perspective view schematically showing a light emitting device in one embodiment of the present invention.

Fig. 6 is a cross-sectional view schematically showing a cross-section of a light emitting device according to another embodiment of the present invention.

As shown in FIG. 1 , the light-emitting device 100 of this embodiment includes, as main constituent members, two light-emitting elements 101a and 101b, a support 108 on which these light-emitting elements are arranged, and other elements mounted on the same support as the light-emitting elements. The semiconductor element 102, and the first conductive lead 105 connecting the electrode of the semiconductor element 102 to the electrode of the support, and the second conductive lead 106 connecting the electrode of the light emitting element to the electrode of the support.

In this embodiment, the semiconductor element 102 mounted on the support separately from the light emitting element is a protection element (for example, a Zener diode) for protecting the light emitting element from overvoltage. The support body 108 has a recessed portion 103 recessed from the upper surface side where the light emitting elements 101a and 101b are disposed to the bottom surface side, and the protective element is accommodated in the recessed portion 103 .

Furthermore, on the upper surface of the support body 108, as shown in FIGS. Components 101a, 101b and second conductive leads 106 connected thereto. Here, the recess 103 has a cavity between the translucent member disposed on the upper surface of the support 108 and the inner wall of the recess. Here, the "void" in this specification is an air bubble that is formed inside the translucent member 107 or between the translucent member 107 and the support and contains air or other gas, or is formed in the translucent member 107. The gap formed between the lower surface and the recess. Such cavities are arranged on the outside of the semiconductor element arranged in the concave portion, especially on the upper side of the semiconductor element, that is, in the direction in which light travels from the outside of the opening. The shape and number of cavities are not limited. For example, many spherical cavities may be dispersed in the concave portion. By arranging the cavities in a dispersed manner, the same effect as when the diffusing agent is contained in the translucent member can be obtained. That is, light is diffused in the translucent member, thereby suppressing intrusion of light toward the bottom surface of the concave portion. In addition, the position of the cavity is not limited between the bottom surface of the light-transmitting member of the opening and the upper surface of the semiconductor element. A cavity may be formed between the translucent member covering the opening of the recess and the inner wall of the recess. For example, a cavity may be provided between the side surface of the semiconductor element housed in the recess and the inner wall of the recess.

The light emitting device 100 in this form, as shown in FIGS. Set of cavities 111 . On the interface between the cavity 111 formed in the opening of the recess 103 and the translucent member 107 , light incident on the interface can be reflected toward the translucent member 107 . Therefore, in the light emitting device 100 of this embodiment, light can be extracted to the outside of the light emitting device without invading the inside of the concave portion 103 .

Such a cavity 111 can be integrally formed in the step of forming the translucent member 107 on the support body 108 . For example, it can be formed by printing the material of the translucent member 107 after arranging a stencil or a mask on the upper surface of the support body 108 . In this method, the material is continuously supplied in a direction substantially parallel to the upper surface of the support body and arranged so as to cover each member arranged on the upper surface of the support body 108 . Therefore, the concave portion 103 is not completely filled with the material of the translucent member 107 , but the cavity 111 needs to be formed in the concave portion 103 and the material of the translucent member 107 needs to be disposed. The material of the translucent member 107 of this embodiment is adjusted to a predetermined viscosity in advance in consideration of the size of the opening of the recess 103 , the ease of operation of the process of arranging the material, and the like. For example, in order to produce a light-emitting device in which a phosphor is contained in a light-transmitting member, a YAG-based phosphor is used as a phosphor, a silicone resin is used as a material of the light-transmitting member, and the two are mixed. The viscosity of the material produced in this way is measured with a B-type viscometer, and is adjusted to be 200 Pa·s or more and 500 Pa·s or less.

In addition, the manufacturing method of this embodiment utilizes the point that when the material of the light-transmitting member is arranged on the upper surface of the support, it is easy to cause bubbles to remain in the concave portion depressed from the upper surface of the support on which the light-emitting element is mounted. A void is formed. That is, the protective element is accommodated in the recessed portion of the depression, and air bubbles remain around the protective element, thereby forming a cavity. Therefore, according to the method of manufacturing a light-emitting device in this form, the step of arranging the light-transmitting member covering the light-emitting element on the upper surface of the support and the use of remaining air bubbles in the concave portion having a bottom surface lower than the mounting surface of the light-emitting element can be combined. The process of forming cavities. The light-emitting device of this embodiment is a light-emitting device that can be manufactured relatively simply and at low cost and has high light-extraction efficiency, as compared with a device in which a light-reflective filler is embedded in a concave portion for accommodating a protective element.

In addition, in the light emitting device of this embodiment, as shown in FIG. 6 , the protruding portion 112 of the translucent member 107 can be provided at the opening of the concave portion 103 . The protruding portion 112 is a portion having a convex surface that protrudes toward the bottom surface of the concave portion in the translucent member 107 . Furthermore, it is also possible to have a cavity 111 between the convex bottom surface of the protruding portion 112 and the upper surface of the semiconductor element 102 housed in the concave portion. The protruding portion 112 of such a translucent member can be formed by adjusting the shape by utilizing the fluidity of the translucent member having a certain viscosity, and then curing it. That is, after adjusting the viscosity of the material of the translucent member, the fluid material is made to protrude from the opening of the recess to the bottom of the recess and solidified when it becomes a desired shape. In addition, by appropriately adjusting the viscosity of the material of the translucent member, the degree of extension toward the bottom surface of the recess can also be adjusted. Thereby, a cavity can be formed or adjusted in size between the convex bottom surface of the protruding portion and the upper surface of the semiconductor element accommodated in the concave portion.

Alternatively, the cavity 111 in this form can also be formed by arranging the light-transmitting member 107 previously formed in another process on the upper surface of the support body 108, and using a part of the light-transmitting member 107 to place the recessed portion of the semiconductor element. The opening is blocked and installed. That is, in the translucent member 107 disposed on the upper surface of the support body 108 to cover the light-emitting element, a cavity is formed between the lower surface of the translucent member 107 that blocks the opening of the recess 103 and the recess 103. Therefore, the light can be reflected to the outside by the lower surface of the translucent member. Furthermore, in consideration of improving productivity, as described above, it is preferable to form the cavity while forming the light-transmitting member covering the light-emitting element and the conductive lead.

In this specification, the upper surface of each member refers to the surfaces forming the external shape of the support, the surface on which the light-emitting element is mounted is the upper surface, and the surface opposite to the upper surface is the bottom surface. In addition, the upper surface and the bottom surface are connected, and the surface between them is a side surface.

The light-emitting device 100 of this embodiment has positive and negative pairs of external connection electrodes 110a, 110c. When the light-emitting device 100 is mounted on a wiring substrate (not shown) by solder, the external connection electrodes 110a, 110c are connected to the wiring substrate through the solder. the electrode connections. In this case, the external connection electrodes 110a and 110c can also serve as heat dissipation paths from the support body to the wiring board via solder.

Therefore, if the mounting portion of the light-emitting element is arranged substantially immediately above the external connection electrode provided on the bottom surface side of the support, the heat dissipation path can be shortened, thereby improving the heat dissipation of the light-emitting device. Furthermore, in the light-emitting device 100 of this embodiment, when the mounting portions of the plurality of light-emitting elements 101a and 101b are provided on the support body 108, it is preferable that such a support body is arranged in a plurality of positions when viewed from the upper surface direction of the support body. In the area sandwiched by the plurality of mounting portions 104b of each light emitting element, there is an opening for accommodating a concave portion of a semiconductor element different from the light emitting element. Furthermore, it is preferable that the positive and negative pairs of external connection electrodes 110a and 110c of the light emitting device 100 extend to immediately below the respective mounting portions 104b of the light emitting elements 101a and 101b. That is, it is preferable that the external connection electrodes 110a, 110c arranged on the back surface of the support body 108 constituting the light-emitting device 100 project the mounting portion vertically from the upper surface (shown in FIG. 1 ) to the back surface (shown in FIG. 4 ) of the support body 108. When the outline of the arrangement figure of 104b is a shape including at least a part of the projected shape, it is more preferable to have a shape including all of the above-mentioned projected shapes.

For example, in the light-emitting device of this mode, as shown in FIG. 4, the positive and negative pairs of external connection electrodes 110a and 110c arranged on the bottom surface of the support extend from both ends of the support 108 to the mounting of the light-emitting elements 101a and 101b. Immediately below portion 104b. Utilizing such an arrangement relationship between the external connection electrode and the mounting portion of the light-emitting element, when mounting a plurality of light-emitting elements on the support, the recesses or the cavities provided in the recesses do not hinder the wiring from the mounting portion of the light-emitting element via the external connection electrode to the wiring. Heat dissipation of the substrate. Therefore, the output of the light emitting device can be improved without reducing the heat dissipation of the light emitting device.

Positive and negative pairs of electrodes are provided in the recess for accommodating the semiconductor element, and the electrical connection between these electrodes and the semiconductor element can also be performed in the recess. The connection method between the electrode in the concave portion and the electrode of the semiconductor element, for example, can make the positive and negative paired electrodes exposed on the bottom surface of the concave portion and the electrode of the semiconductor element face each other and use bumps to connect them, or use conductivity The leads connect the electrodes on the upper surface of the semiconductor element to the electrodes on the bottom surface of the recess. Preferably, all the conductive leads connecting the electrodes of the semiconductor element to the electrodes in the recess are housed in the recess. That is, it is preferable that the topmost part of the conductive lead is lower than the upper surface of the support on which the light emitting element is arranged. Thereby, the light-transmitting member 107 is less affected by the conductive lead, and it is possible to eliminate the reduction in the reliability of the light-emitting device due to the metal fatigue of the conductive lead.

The light-emitting device of this form has a structure such as a concave portion between the light-emitting element and a different light-emitting element, and the amount of light increases in the region sandwiched between the light-emitting elements. If the light enters the concave portion, the loss of light will also increase. Become more. In order to reduce the loss of light in such a structured light-emitting device, the present invention is particularly preferable and applicable. Hereinafter, each constituent member in the light emitting device of this embodiment will be described in detail.

(light emitting element)

In this form, a semiconductor device in which a light-emitting element and a protective element are arranged on a support body is described, but it is not limited to this form, and a light-receiving element, other protective elements (resistors, transistors, capacitors, etc.) may be mounted. ), or a semiconductor device that is a combination of at least two or more of them. There may be one or more light-emitting elements, protective elements accommodated in the recess, or other semiconductor elements. The light emission color of the light-emitting element may be any of red, green, or blue, or a combination of these colors.

The light-emitting element in this embodiment is preferably a semiconductor light-emitting element having an active layer capable of emitting light at a wavelength that can excite the fluorescent substance when it is a light-emitting device including a fluorescent substance. Examples of such semiconductor light-emitting elements include various semiconductors such as ZnSe and GaN, and nitride semiconductors (In _X Al _Y Ga _1-XY N, 0 ≤X, 0≤Y, X+Y≤1). Various emission wavelengths can be selected by using the material of the semiconductor layer or its mixed crystallinity.

When a nitride semiconductor is used as a material of a light-emitting element, a material such as sapphire, spinel, SiC, Si, ZnO, GaN, or the like can be suitably used on a semiconductor substrate for laminating semiconductors. In order to form a nitride semiconductor with good crystallinity with good mass productivity, it is preferable to use a sapphire substrate. A nitride semiconductor can be formed on this sapphire substrate using MOCVD or the like. In addition, the semiconductor substrate can also be removed after laminating the semiconductor layer.

When used as a light-emitting device that emits white-color mixed-color light, the light-emitting element preferably has a light-emitting wavelength of 400 nm or more and 530 nm or less, more preferably 420 nm or more, in consideration of the complementary color relationship with the light-emitting wavelength from the fluorescent material or the deterioration of the sealing resin. , below 490nm. In order to further improve the excitation and luminous efficiency of the light-emitting element and the fluorescent substance, respectively, it is more preferably 450 nm or more and 475 nm or less.

As a material for a light-emitting element emitting red light, a gallium aluminum arsenide-based semiconductor or an aluminum indium gallium phosphide semiconductor is preferable.

Furthermore, in order to produce a color display device, it is preferable to combine light-emitting elements having a red emission wavelength of 610 nm to 700 nm, a green emission wavelength of 495 nm to 565 nm, and a blue emission wavelength of 430 nm to 490 nm.

After the light-emitting element is fixed on the support, the electrodes of the light-emitting element are respectively connected to the conductor wiring of the support with conductive leads. Among them, the bonding member for fixing the light-emitting element is not particularly limited, and an insulating adhesive such as epoxy resin, or a eutectic material containing Au and Sn, a solder such as a low-melting point metal, a conductive adhesive containing a resin, or Glass, etc., the resin contains a conductive material. Here, the conductive material contained in the conductive adhesive is preferably Au, Sn, or Ag, and more preferably an Ag adhesive having an Ag content of 80% to 90% is used to obtain a light emitting device with excellent heat dissipation. Furthermore, the semiconductor element having electrodes on the bottom side can be bonded to the support by using a conductive adhesive containing metal materials such as silver, gold, and palladium.

In the case of a light-emitting element formed by laminating nitride semiconductors on a translucent sapphire substrate, examples of the bonding member include epoxy resin, silicone, and the like. In this case, a metal material of silver or aluminum may also be arranged on the bottom surface of the light emitting element (that is, the surface of the above-mentioned sapphire substrate opposite to the surface on which the nitride semiconductor is laminated. Hereinafter, the same applies in this paragraph.). For example, a metal layer can be formed on the bottom surface of the light-emitting element by vapor-depositing or sputtering a silver or aluminum metal material. This improves the light reflectance of the bottom surface of the light emitting element, and therefore, when a resin material is used as the bonding member, deterioration of the resin due to light or heat from the light emitting element is suppressed, and the light extraction efficiency of the light emitting device is improved. Furthermore, a metal layer made of silver or aluminum and a eutectic layer made of Au or Sn are stacked in this order from the bottom surface side of the light emitting element. Thereby, the light reflectance is improved between the bottom surface of the light emitting element and the eutectic layer. In addition, when the eutectic material contains a material that absorbs at least part of the light from the light-emitting element, light loss at the bottom side of the light-emitting element is reduced, thereby improving the light extraction efficiency of the light-emitting device.

The light-emitting element is fixed to a light-emitting element mounting portion provided on the upper surface of a support described later by a bonding member. In this form, the light emitting element is fixed to the metal member provided on the upper surface of the support. However, it is not limited to such an embodiment, and the light emitting element may be mounted on an insulating member constituting the support.

(conductive lead)

The conductive leads are required to have good ohmic properties, mechanical connectivity, electrical conductivity, and thermal conductivity with the electrodes of the light-emitting element. The thermal conductivity is preferably 0.01 cal/(s) (cm ² ) (°C/cm) or higher, more preferably 0.5 cal/(s) (cm ² ) (°C/cm) or higher. In addition, in consideration of workability and the like, it is preferable that the diameter of the conductive lead is φ10 μm or more and φ45 μm or less. When the fluorescent material is contained in the light-transmitting member, the conductive leads are likely to be disconnected at the interface between the portion containing the fluorescent material and the portion not containing the fluorescent material. Therefore, the diameter of the conductive lead is more preferably 25 μm or more, and more preferably 35 μm or less from the viewpoint of securing the light emitting area of the light emitting element and ease of handling. Specific examples of such conductive leads include conductive leads using metals such as gold, copper, platinum, aluminum, and alloys thereof.

(support body)

The package of this aspect is comprised from the support body which arrange|positions a semiconductor element and an electrode, and the translucent member which covers a semiconductor element. First, as the support in the light-emitting device of this embodiment, a plate-shaped support in which conductor wiring is provided on an insulating substrate can be suitably used. The light emitting element is disposed on a mounting portion provided on the main surface of the plate-shaped support. As a support without a side wall surrounding the side surface of the light emitting element, the light emitted from the side surface of the light emitting element can be taken out to the outside without being lost. The insulating substrate of the present embodiment is a cuboid whose upper surface is substantially rectangular, and has a concave portion recessed from the upper surface side toward the bottom surface side at a substantially central portion of the upper surface. In addition, a metal member for mounting a light emitting element and two pairs of positive and negative electrodes are provided on the upper surface of the insulating substrate. The recess is provided between these electrodes and the metal material. In addition, an electrode is provided on the bottom surface of the concave portion, and the electrode is electrically connected to the electrode provided on the upper surface of the insulating substrate. Furthermore, the shape and position of the electrodes and the metal member provided on the insulating substrate are appropriately adjusted in consideration of the size and shape of the semiconductor element disposed on the metal member as the mounting portion, the easiness of stretching of the conductive lead, and the like.

The insulating substrate constituting the support of the present embodiment has, on the upper surface on which the semiconductor element is mounted, a concave portion recessed from the upper surface side to the bottom surface side in a region outside the region where the light emitting element is mounted. A semiconductor element different from the light-emitting element, such as a protective element, is accommodated in the recess. In the concave portion of this embodiment, the outer shape of the opening portion in plan view is substantially square, but it is not limited thereto, and can be formed in a shape and size that matches the size, number, and shape of semiconductor elements accommodated in the concave portion. In addition, similarly, the depth of the recess can be appropriately adjusted according to the height of the accommodated semiconductor element and the connection method with the electrodes in the recess. As shown in FIG. 1 , it is preferable to provide a recessed portion 103 approximately in the center of the support body 108 between the mounting portion 104b of the first light emitting element 101a and the mounting portion 104b of the second light emitting element 101b. Thus, compared with a light-emitting device in which recesses are provided at the corners of the support (for example, viewing the support from the upper surface, in the longitudinal direction of the support, there are mounting parts on which the first light-emitting element and the second light-emitting element are sequentially arranged. In comparison with light-emitting devices such as supports with mounting portions and recesses), the light-emitting device in this embodiment can reduce the influence on the light distribution property by providing the recesses on the support.

In addition, for example, when forming a cavity at the same time as forming a light-transmitting member, the size and depth of the recess are preferably from 1.0 to 2.5 in a similarity ratio of the shape of the opening of the recess in plan view and the shape of the semiconductor element housed in the recess in plan view, and , the ratio of the depth of the recess to the height of the semiconductor element housed in the recess is from 1.0 to 2.14. This is because if the size of the recess is too large relative to the size of the semiconductor element, the air bubbles forming the cavity will also become larger, so there is a concern that such air bubbles will be thermally expanded by the heat generated by the light emitting element, thereby degrading the reliability and optical characteristics of the light emitting device. .

As a material of the insulating substrate, a glass epoxy substrate in which an epoxy resin contains a glass component, or a substrate made of ceramics can be suitably used.

When high contrast is required in a light-emitting device, it is preferable that the base material of the insulating substrate contains pigments such as Cr ₂ O ₃ , MnO ₂ , Fe ₂ O ₃ , so that the insulating substrate becomes a dark color system. Alternatively, in order to impart a high light reflectance to the insulating substrate, it is preferable to contain a white pigment such as titanium dioxide.

In particular, when high heat resistance and high light resistance are desired, it is preferable to use ceramics as the base material of the insulating substrate. The main material of ceramics is preferably alumina, aluminum nitride, mullite, and the like. A sintering aid etc. are added to these main materials, and a ceramic substrate can be obtained by sintering. For example, 90% to 96% by weight of the raw material powder is alumina, and as a sintering aid, 4% to 10% by weight of clay, talc, magnesium oxide, calcium oxide, and silica are added, and at a temperature of 1500 to 1700°C 40-60% by weight of ceramics or raw material powder to be sintered within the range is alumina, and 60-40% by weight of borosilicate glass, cordierite, forsterite, mullite, etc. are added as sintering aids, And ceramics that are sintered at a temperature range of 800 to 1200 ° C. Such a ceramic substrate can be formed into various shapes at the stage of a printed circuit board before firing. Therefore, it is possible to easily form an insulating substrate having the concave portion of the present embodiment. In addition, conductor wiring of various pattern shapes can be implemented at the stage of the printed circuit board before firing. For example, by screen-printing an adhesive-like material containing tungsten, it is possible to form an underlayer of a metal material used as a conductor wiring or a mounting portion of a semiconductor element. On these base layers, after the ceramic material is fired, the metal material on the outermost surface is arranged by gold plating or sputtering with silver, gold, or aluminum as the material. The outermost surface is preferably covered with a metal material having a high reflectance to light from the light emitting element.

(translucent member)

The material of the translucent member is not particularly limited, and for example, a translucent resin excellent in weather resistance such as silicone resin, epoxy resin, urea resin, fluororesin, and a hybrid resin containing at least one of these resins can be used. In addition, the light-transmitting member is not limited to an organic substance, and an inorganic substance excellent in light resistance, such as glass and silica gel, may be used. In addition, to the light-transmitting member of this embodiment, any member corresponding to the application, such as a viscosity extender, a light-diffusing agent, a pigment, or a fluorescent substance, may be added. For example, a colorant corresponding to the emission color of the light emitting device may be added. In addition, examples of the light diffusing agent include barium titanate, titanium oxide, aluminum oxide, silicon dioxide, calcium carbonate, and mixtures containing at least one or more of these components. Furthermore, the lens effect can be given by making the light-emitting surface side of a translucent member into a desired shape. Specifically, in addition to a flat plate shape, a convex lens shape, and a concave lens shape, an elliptical shape or a combination of a plurality of the above shapes can also be formed when viewed from the light-emitting observation plane.

(fluorescent substance)

In the light-emitting device of this aspect, a fluorescent substance may be contained in the light-transmitting member. As an example of such fluorescent substances, there are fluorescent substances containing rare earth elements described below.

Specifically, a garnet type having at least one element selected from the group Y, Lu, Sc, La, Gd, Tb, and Sm and at least one element selected from the group Al, Ga, and In can be cited. Fluorescent substance. In particular, the aluminum garnet-based phosphor contains Al and at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, Ga, In, and Sm, and is selected from rare earth elements. A phosphor activated by at least one element is a phosphor that is excited to emit light by visible light or ultraviolet light emitted from a light emitting element. For example, Tb _2.95 Ce _0.05 Al ₅ O ₁₂ , Y _2.90 Ce _0.05 Tb _0.05 Al ₅ O ₁₂ , Y _2.94 Ce _0.05 Pr _0.01 Al ₅ O ₁₂ other than yttrium aluminum oxide-based phosphors (YAG-based phosphors). , Y _2.90 Ce _0.05 Pr _0.05 Al ₅ O ₁₂ , etc. Among them, especially in the present embodiment, two or more kinds of yttrium aluminum oxide-based phosphors containing Y, activated by Ce or Pr, and having different compositions are used.

In addition, the nitride-based phosphor contains N, and contains at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and at least one element selected from C, Si, Ge, Sn, Ti, Zr, and Hf. A phosphor activated by at least one element selected from rare earth elements. Examples of nitride-based phosphors include (Sr _0.97 Eu _0.03 ) ₂ Si ₅ N ₈ , (Ca _0.985 Eu _0.015 ) ₂ Si ₅ N ₈ , (Sr _0.679 Ca _0.291 Eu _0.03 ) ₂ Si ₅ N ₈ and the like.

Hereinafter, examples related to the present invention will be described in detail. Furthermore, it goes without saying that the present invention is not limited only to the Examples shown below.

FIG. 1 is a top view schematically showing a light emitting device 100 in this embodiment. FIG. 2 is a cross-sectional view schematically showing a cross-section of the light-emitting device 100 in FIG. 1 taken along the II-II direction. FIG. 3 is a cross-sectional view schematically showing a cross-section of the light-emitting device 100 shown in FIG. 1 when it is cut along the III-III direction. In addition, FIG. 4 is a bottom view schematically showing the light emitting device 100 of this embodiment. FIG. 5 is a perspective view schematically showing the light emitting device 100 of this embodiment.

As shown in FIG. 1 , the light-emitting device 100 in this embodiment includes: a flat plate-shaped support 108 having a first electrode 104 a and a second electrode 104 c that supply power to the light-emitting element, and is provided on the upper surface of the support 108 . A plurality of light emitting elements 101a, 101b arranged as a mounting portion of the metal member 104b connects the electrodes of the first light emitting element 101a and the second light emitting element 101b to the second conductive lead 106 of the first electrode 104a and the second electrode 104c, And the translucent member 107 covering the light emitting elements 101a, 101b and the second conductive lead 106 .

The light-emitting element of this embodiment is two LED chips 101a and 101b that emit blue light and are made of a gallium nitride-based compound semiconductor. These LED chips have a rectangular shape of 500 μm×290 μm (length×width) when viewed from the top surface, and a eutectic material containing Au and Sn as materials is disposed on the bottom surface side. These LED chips were respectively bonded to mounting portions having silver provided on the upper surface of the support as the outermost surface through eutectic materials.

The supporting body is on an insulating substrate made of ceramics, with tungsten as the base layer, and nickel, gold and silver are plated sequentially. By disposing these metal materials, each electrode and metal member 104b are formed. Further, the support body 108 is provided with a concave portion 103 having an opening in a region sandwiched between the two mounting portions of the LED chip 101a and the LED chip 101b on the upper surface of the insulating substrate. The protection element 102 for protecting the LED chips 101a and 101b from overvoltage is housed in the concave portion 103 . Furthermore, the light emitting device of this embodiment has a cavity 111 between the lower surface of the translucent member 107 covering the opening of the concave portion 103 and the upper surface of the protective element 102 accommodated in the concave portion 103 .

The protection element 102 of this embodiment is a Zener diode having electrodes with different polarities on the upper surface and the bottom surface. The protective element 102 is bonded to the bottom of the recess 103 using silver adhesive as the conductive adhesive, and the electrodes on the bottom are connected to the conductor wiring exposed on the bottom of the recess 103 through the conductive adhesive. In addition, the electrode on the upper surface of the protective element 102 is connected to the first electrode 104 a provided on the upper surface of the support body through the first conductive lead 105 .

As shown in Figure 1, the support body 108 of this embodiment has: on the upper surface where the light emitting element is arranged, the positive and negative paired electrodes (the first electrode 104a and the second electrode 104a) connected to the light emitting element through the second conductive lead 106 104c); and a metal member 104b which is insulated from these electrodes and provided on the upper surface of the same support. The two LED chips 101a and 101b are mounted on a metal member 104b provided separately from the electrodes. Thereby, heat dissipation vias can be provided on the support body separately from the arrangement pattern of the conductor wirings connected to the electrodes, so that a light emitting device with high heat dissipation can be obtained.

As shown in FIG. 4 , the light-emitting device 100 of this embodiment, viewed from the back direction, has a cutout on a pair of side faces facing each other in the length direction of the support body 108 , and faces the support body 108 from the inside of the cutout. A first external connection electrode 110a and a second external connection electrode 110c are extended from the central portion of the . These first external connection electrodes 110a and second external connection electrodes 110c are electrically connected to the first electrode 104a and the second electrode 104c arranged on the upper surface of the support body 108 and the electrodes arranged on the bottom surface of the concave portion 103 in order to connect with each semiconductor element. . That is, the first external connection electrode 110a and the second external connection electrode 110c are electrically connected to the first electrode 104a and the second electrode 104c, respectively, through conductive wiring embedded in the support. The first external connection electrode 110a and the second external connection electrode 110c are connected to the wiring substrate through the solder when the light emitting device 100 is mounted on the external wiring substrate by solder.

As shown in FIGS. 2 and 3 , the cavities 111 of the present embodiment are formed by air bubbles remaining in the concave portion 103 during the process of forming the light-transmitting member 107 of the light-emitting device 100 of the present embodiment. That is, after disposing each semiconductor element on the support body 108 and connecting each electrode with a conductive lead, it is formed by printing a silicone resin containing a YAG-based phosphor so as to cover the light emitting element, the conductive lead, and the opening of the recess. The manufacturing method of the light emitting device of this embodiment is roughly as follows.

First, a plurality of LED chips are arranged on an aggregate substrate of a support body 108 made of ceramic as an insulating substrate material, and then the protective element 103 is housed in the concave portion and electrically connected with conductive leads or the like. Furthermore, the protective element 103 is bonded to the conductor wiring disposed on the bottom surface of the concave portion using silver adhesive as an adhesive, and the electrodes on the bottom surface of the protective element 103 are electrically connected to the conductor wiring through the silver adhesive.

Next, the silicone resin containing the YAG-based phosphor is arranged linearly along the arrangement of the LED chips so as to cover the plurality of LED chips, the conductive leads, and the openings of the recesses together. At this time, the viscosity of the silicone resin containing the YAG-based phosphor was 300 Pa·s. In addition, the protective element of the present example has a square outer dimension of 240 μm×240 μm in a plan view of its upper surface, and a height of 0.14 mm when placed on the bottom surface of the concave portion. When such a large protective element is accommodated in the recess, the outer dimension of the opening of the recess is preferably a square with a side of 0.24 mm to 0.60 mm, and the depth from the upper surface of the opening to the bottom of the recess is preferably 0.15 mm to 0.30 mm. . In this embodiment, the outer dimension of the opening of the recess is a square of 0.50 mm×0.50 mm, and the depth is 0.15 mm. Then, after the silicone resin was cured, the light-transmitting member and the insulating substrate were cut by dicing and individualized to a predetermined size, thereby obtaining the light-emitting device 100 of this example.

Moreover, the marks (including straight lines or L-shaped marks) 109 respectively formed on the four corners or sides of the rectangle forming the upper surface of the support body 108 can be used as marks to identify the positive and negative components arranged on the light emitting device 100 . In addition to the polarity of the pair of external connection electrodes 110a and 110e, it can also be used as a mark showing a dicing line when dicing the collective substrate into individual pieces.

The present invention can be used in light sources for lighting, light sources for various indicators, light sources for vehicles, light sources for displays, light sources for backlights of liquid crystals, and the like.

Having shown and described various preferred embodiments, the present invention should be apparent to those of ordinary skill in the art. It is contemplated that the invention is not limited to the particular embodiments disclosed, which are to be considered as illustrative of the inventive concept and should not be construed as limiting the scope of the invention. The present invention is susceptible to various modifications and changes within the scope of the invention defined in the claims.

This application is based on Japanese Patent Application Laid-Open No. 2007-188709 filed on July 19, 2007 and Japanese Patent Application Laid-Open No. 2007-335793 filed on December 27, 2007, and the relevant contents are hereby incorporated by reference.

Claims (11)

1. A light-emitting device, characterized in that it has: a light emitting element having electrodes; and Encapsulating, configuring light-emitting elements and setting electrodes; The above package also features: A support body having a mounting portion on which the above-mentioned light-emitting element is arranged and a concave portion for accommodating a semiconductor element different from the above-mentioned light-emitting element; a light-transmitting member disposed on the support; and Conductive leads, connecting the electrodes provided on the package and the electrodes of the above-mentioned light-emitting element; Wherein, the above-mentioned translucent member covers at least the above-mentioned light-emitting element and the opening of the above-mentioned concave portion, The package has a cavity in the concave portion. 2. The light emitting device according to claim 1, characterized in that: The cavity is provided between the bottom surface of the translucent member covering the opening of the recess and the upper surface of the semiconductor element housed in the recess. 3. The light emitting device according to claim 1, characterized in that: The translucent member has a convex protrusion extending from the opening of the recess toward the bottom of the recess. 4. The light emitting device according to claim 1, characterized in that: The concave portion is provided in a region sandwiched between the plurality of mounting portions of the light emitting element, and the support body is respectively provided with external connection electrodes substantially immediately below the mounting portions. 5. The light emitting device according to claim 1, characterized in that: The similarity ratio of the shape of the opening of the recess in plan view to the shape of the semiconductor element housed in the recess in plan view is from 1.0 to 2.5. 6. A method for manufacturing a light-emitting device, the light-emitting device comprising: a light-emitting element, a package for disposing the light-emitting element, and a conductive lead connecting an electrode provided on the package with an electrode of the light-emitting element; A light-transmitting member for the above-mentioned light-emitting element, and a support body, the support having a mounting portion on which the light-emitting element is arranged and a recess for accommodating a semiconductor element different from the light-emitting element; the method for manufacturing a light-emitting device, characterized in that it has the following Process: The first step is to form a support body having a concave portion opened on the upper surface on which the above-mentioned light-emitting element is mounted; In the second step, disposing the upper surface of the semiconductor element below the upper surface of the mounting part of the light emitting element, and accommodating the semiconductor element in the recess; The third process, disposing the above-mentioned light-emitting element and the above-mentioned conductive lead; In a fourth step, a cavity is formed in the recess and a translucent member covering at least the light emitting element and the opening of the recess is arranged on the support. 7. The method for manufacturing a light emitting device according to claim 6, characterized in that: The fourth step includes continuously supplying the material of the light-transmitting member in a direction substantially parallel to the upper surface on which the light-emitting element is mounted. 8. The method of manufacturing a light emitting device according to claim 7, characterized in that: The viscosity of the material of the translucent member is adjusted in the fourth step according to the size of the concave portion corresponding to the semiconductor element so that air bubbles remain in the concave portion. 9. The method of manufacturing a light-emitting device according to claim 7, characterized in that: The material of the above-mentioned light-transmitting member is a material containing at least one resin selected from silicone resin or epoxy resin, and the particulate phosphor is contained in the resin. 10. The method for manufacturing a light emitting device according to claim 8, characterized in that: The viscosity of the material of the above-mentioned translucent member is 200 Pa·s or more and 500 Pa·s or less. 11. The method for manufacturing a light-emitting device according to claim 6, characterized in that: The similarity ratio of the outline of the opening portion of the above-mentioned recessed portion in plan view and the appearance of the semiconductor element accommodated in the above-mentioned recessed portion is from 1.0 to 2.5, and the ratio of the depth of the above-mentioned recessed portion to the height of the semiconductor element accommodated in the above-mentioned recessed portion is from 1.0 to 2.14.

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