CN101418218A - Solar cell luminescent conversion layer and inorganic fluorescent powder - Google Patents
Solar cell luminescent conversion layer and inorganic fluorescent powder Download PDFInfo
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- 239000000843 powder Substances 0.000 title claims abstract description 40
- 238000006243 chemical reaction Methods 0.000 title claims description 26
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 53
- 239000010703 silicon Substances 0.000 claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 52
- 239000000203 mixture Substances 0.000 claims abstract description 24
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 22
- 229920001558 organosilicon polymer Polymers 0.000 claims abstract description 20
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 11
- 150000004645 aluminates Chemical class 0.000 claims abstract description 8
- XTQHKBHJIVJGKJ-UHFFFAOYSA-N sulfur monoxide Chemical compound S=O XTQHKBHJIVJGKJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229920005591 polysilicon Polymers 0.000 claims abstract description 4
- 230000003647 oxidation Effects 0.000 claims abstract 2
- 238000007254 oxidation reaction Methods 0.000 claims abstract 2
- 229920001169 thermoplastic Polymers 0.000 claims abstract 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 44
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 30
- 238000004020 luminiscence type Methods 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 28
- 239000010410 layer Substances 0.000 claims description 24
- 230000005855 radiation Effects 0.000 claims description 20
- 230000005284 excitation Effects 0.000 claims description 11
- 229920005573 silicon-containing polymer Polymers 0.000 claims description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 10
- 229910052760 oxygen Inorganic materials 0.000 claims description 10
- 239000001301 oxygen Substances 0.000 claims description 10
- 230000008859 change Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 238000003786 synthesis reaction Methods 0.000 claims 2
- 101100167365 Caenorhabditis elegans cha-1 gene Proteins 0.000 claims 1
- 230000004931 aggregating effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 6
- 238000005516 engineering process Methods 0.000 abstract description 2
- 229910052809 inorganic oxide Inorganic materials 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 229920001187 thermosetting polymer Polymers 0.000 abstract 1
- 239000004416 thermosoftening plastic Substances 0.000 abstract 1
- 210000004027 cell Anatomy 0.000 description 62
- 230000001965 increasing effect Effects 0.000 description 15
- 238000001228 spectrum Methods 0.000 description 11
- 230000003595 spectral effect Effects 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 5
- 238000002474 experimental method Methods 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000012190 activator Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002223 garnet Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 229910019142 PO4 Inorganic materials 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- TXKMVPPZCYKFAC-UHFFFAOYSA-N disulfur monoxide Inorganic materials O=S=S TXKMVPPZCYKFAC-UHFFFAOYSA-N 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 2
- 239000010452 phosphate Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- LSGOVYNHVSXFFJ-UHFFFAOYSA-N vanadate(3-) Chemical compound [O-][V]([O-])([O-])=O LSGOVYNHVSXFFJ-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 240000007594 Oryza sativa Species 0.000 description 1
- 235000007164 Oryza sativa Nutrition 0.000 description 1
- 235000002492 Rungia klossii Nutrition 0.000 description 1
- 244000117054 Rungia klossii Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- -1 based on rare earths Chemical compound 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 125000004334 oxygen containing inorganic group Chemical group 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 235000009566 rice Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
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Abstract
The invention relates to the technical field of energy technology, in particular to a material structure for manufacturing a silicon solar cell. The structure of the silicon solar cell is formed by collected an organosilicon polymer and inorganic oxide fluorescent powder. The compositions of the solar cell come from polysilicon, monocrystal silicon and amorphous silicon, which aim at better improving effective parameters of the solar cell. In the inorganic fluorescent powder containing an oxidation composition, the material structure adopts orthosilicate, aluminate, phosphate-vanadate and oxysulfide. When d50 is less than or equal to 0.8 micron, the weight ratio of synthetic fluorescent powder is between 0.05 and 10 percent; and the organosilicon polymer on the surface has the same thickness layer which is formed through 0.3 to 5 mm thermoplastic loading or thermosetting loading Three modes are comprehensively adopted to promote all electrical parameters of the solar cell by 10 percent and increase efficiency by 20 percent than the prior efficiency.
Description
Technical Field
The invention relates to an energy-alternating power technology, which depends on the material structure and is used for producing silicon solar cells. Silicon solar cells are widely used as alternative energy sources, and the types of silicon solar cells generally adopt:
-a thin sheet of Si-based monocrystalline silicon;
-a thin plate of polycrystalline silicon based on Si; and
amorphous silicon based thin films, called α -Si.
The present invention is directed specifically to silicon solar cells of silicon construction. Similar to this solar cell structure derived from silicon components, it comprises: both surfaces each having an electrode, (1) one of them being integral (solid); (2) the second is in a grid shape; (3) forming a p-n junction layer on the outer surface of the silicon thin plate; and (4) the product of the boron-containing gaseous diffusion produces bright brightness under the silicon sheet.
Prior Art
According to the main parameter efficiency of the solar cell at the present stage, the output ratio of the solar cell power in the whole sunlight power is obtained, and through professional measurement and calculation, when the light-emitting angle is 60 degrees to the horizontal line, the power of sunlight irradiating on the surface layer of the land is 1000 Watts/m2. As the ratio of electrical power is established, an efficient solar cell is determined. Such a theory is clearly described in "silicon solar cell", the limit of efficiency of single crystal silicon may not exceed 24%, for example, the document qiapa a. solar cell "world moku family P360 page (russia) (zhao, 1, e, g, ч, g, ы, g, e, g, ч, g 4, 1985, g, 3, 360, g. The lack of necessary thermal cooling in the composition of solar cells results in a major loss of efficiency, especially in the energy domain of single crystal silicon.
The first point is related to the theory of thermodynamics associated with solar cells, where any one energy source, according to the Kapho reduction cycle (law name), has a corresponding efficiency reduction η ═ T1-T2)/T1Wherein eta-is T1Period of effectiveness under temperature cycling, T2For temperature at the programmed energy, ifThe effective cycle value is minimal, so all large-size-contoured solar cells have a solid bottom edge (base) and are receptive to forced cooling.
The second reason is directly related to the single crystal silicon structure, and the energy added by the operation of the bottom conductive region and the valence region at the top end is converted into equal thermal energy by electron transfer, and the silicon lattice is heated according to the principle of thermal fluctuation mechanics (the physical phenomena such as sound, background noise, etc.) usually ranges from 0.8 kv to 1 kv.
There are other reasons for reduced efficiency, such as heat loss. Part of the solar photons have an energy h ν ═ 3 electron volts, but for the wide forbidden region E of monocrystalline silicongThe energy of 1.9 electron volts exists in the crystal lattice after the sunlight hits the monocrystalline silicon plate, and the monocrystalline silicon plate is heated, so that heat loss is caused. In addition, single crystal silicon solar cells also have an important loss of efficiency — a spectral shift between the maximum radiation spectrum of sunlight (λ 470nm) and the maximum sensitivity spectrum of single crystal silicon (λ 940 nm). The spectral mismatch is described in the KP2007011205 patent application filed by the inventor on 2007, 12, 11, to the korean patent office. The data cited in this patent exclude the incongruous defect for the conversion of the luminescence radiation in the yellow wavelength range region in the spectral composition of silicon solar cells.
Practical results have been achieved with microcrystalline garnet phosphor compositions on luminescence converters, which, although attractive, are not sufficiently informative in realizing the proposed concept. In addition, data for the mentioned monocrystalline silicon solar cells are also very poor.
For example, U.S. patent No. 2007/0295383 a1, issued on 27.12.2007 by Intematix corporation, proposes to replace expensive garnet with silicate-based phosphor for improving the efficiency of the solar cell and to adopt the concept of the korean patent application No. KP2007011205, which was filed by the inventor of the korean patent application No. KP2007011205 (Soshchin n.p.), although it is not cited in the specific experimental data, in the patent specification, it is suggested that the efficiency of the solar cell can be improved by 1% (absolute value).
By the fact that in the conversion layer, as indicated in the us patent publication 2007/0295383 a1, it is necessary to use nano-sized phosphors, the intense radiation emitted in the first order is eliminated, the converter being mentioned which absorbs no more than 5% of the light. In fact, there are still a series of deficiencies in this U.S. patent publication No. 2007/0295383 a 1:
lack of the desired photoelectric coefficient to promote high efficiency;
the technical features mentioned in the patent are difficult to achieve.
Disclosure of Invention
The invention realizes the increase of the effective coefficient of the solar cell, and mainly aims to provide the preparation of the monocrystalline silicon solar cell and the polycrystalline silicon solar cell. The silicon solar cell has the following advantages:
-fabricating the structure of the solar cell with optimal techniques;
-increasing the conductivity parameter of the solar cell; and
optimum operating conditions for the silicon solar cells to emit light.
Brief Description of Drawings
For the implementation of the mentioned solution, the invention further discloses details, firstly with reference to the drawings, in which:
FIG. 1 is a view showing the composition and structure of a silicon solar cell according to the present invention.
Fig. 2a and 2b are reflection spectra of the single crystalline silicon solar cell of the present invention.
FIG. 3 shows the present invention at an excitation wavelength of λExcitation464 NaSpectrogram of yellow-light fluorescent powder in rice.
FIG. 4 shows the present invention at an excitation wavelength of λExcitationWhen the wavelength is 464nm, the radiation spectrum of the aluminate fluorescent powder is shown.
Wherein, the main reference symbols are as follows:
Luminescence conversion layer 5 Polymer 6
Inorganic phosphor 7
[ embodiment ] A method for producing a semiconductor device
In order to meet the purpose of the present invention and to establish the research direction, the distribution range of the organic silicon polymer and the inorganic phosphor particles is characterized in that the molecule contained in the organic silicon polymer is 10000-25000 carbon elements for improving the performance parameters of the silicon solar cell. The introduced micro fluorescent powder particles are aluminate, silicate, phosphate, vanadate, oxysulfide and a mixture thereof, the weight ratio of the introduced micro fluorescent powder particles is 0.01-10%, and the spectrum conversion layer on the surface of the silicon solar cell is 0.01 g/cm2。
In the composition structure diagram of the silicon solar cell shown in fig. 1: the thickness of one silicon wafer 1 is 180-360 μm and a dimension of 30 x 40mm, with an electrode system having a bottom surface 2 and a top surface 3. The surface of the top surface 3 of the silicon is covered with a thin coating layer 4 made of silicon nitride (Si)3N4) The cap layer is on the thin P-N layer. The luminescence conversion layer 5 is on the film coating layer 4, and the luminescence conversion layer 5 is composed of organic silicon polymer 6 filled with inorganic fluorescent powder 7. No electrical power is generated in the non-illuminated silicon element composition, and the following special effect parameters are provided in the illumination of sunlight and in artificial luminous points, such as in the form of fluorescent lamps:
VOCno load voltage, V
ISCShort-circuit (closed) current density, mA/cm2
FF-significant factor
Eta-cell absolute efficiency
η=VOC·FF·ISC。
In table 1 specific solar electrode sizes 30 x 40mm are cited, from different types of silicon solar cells.
TABLE 1
In the process of the invention, the luminescent converter of the fluorescent powder on the surface of the silicon solar cell is mainly based on the organic silicon polymer, and the organic silicon polymer has the function of changing the conductivity and the luminescence coefficient of all the silicon solar cells. The change comes from different reasons, and the main reasons can be divided into:
phosphor as a chemical component of the silicone polymer is formed on its surface (temperature, viscosity, curing time);
-a spectrogram of the chemical composition of inorganic oxide phosphors, its specific spectrum and the correlation of the phosphor particles with the polymer mass; and
the type of silicon used.
The inventors have found that for when using a predominantly polycrystalline silicon (Poly-Si) solar cell, VOCThe coefficient is increased by 0.22-0.89%, the closed current density is improved by 0.22-0.89%, when the overall current value is increased by 1.1-4.1%, the average absolute efficiency of the battery is 12%, and the sample parameter V is changedOC=0.5728V,ISC=30.4077mA/cm2More importantly, the effective coefficient FF is changed to 0.6884The average value before change is at FF 0.6705, and the maximum value is increased to Δ FF 15.24%.
The inventor further finds that the absolute efficiency eta of the battery can be improved by 1.46-20.38% and the average effective value is improved to delta eta of + 6.8% by coating the organic silicon polymer on the surface of the single crystal silicon and the fluorescent powder component. In solar cells, mainly monocrystalline silicon with conventional values of the parameters is used, as shown in korean patent application No. KP2007011205, for example, the conductivity parameter of which is increased to VOC=0.5809V,FF=0.7532,JSC33.8624 mA/cm2And the absolute battery efficiency η is 14.5606.
The use of amorphous silicon in solar cells is very rare because the number of experiments and their adoption is limited, indicating that the values of the parameters exceed the original 12 when using the invention—28%。
Summarizing all the data, it is certain that the silicon component of the solar cell of the invention mentioned at the present stage has a higher specific performance, which also increases the overall efficiency parameter.
The solar cell composition of the invention has an unexpected experimental result in this test, in order to produce the proposed silicone polymer, which is characterized in that it contains particles of phosphors, for example an ultraviolet-excited orthosilicate phosphor component + a valence-2 activator Eu+2The stoichiometric formula of (a) is shown as follows:
(Me2+O)a(Si(O1-pCxDyEz)2)b
wherein,
Me2+=Ba2+and/or Sr2+And/or Ca2+And/or Mg2+And/or Eu2+,
C=Hal=F-And/or Cl-And/or Br-And/or I-,
D=Chal=S2-And/or Se2-,
E=N3-,
p=x/2+y+3z/2,
The stoichiometry of the phosphor is shown by the following values: x is more than or equal to 0.0001 and less than or equal to 0.01, and X is more than or equal to 0.0001 and less than or equal to 0.01<y≤0.01,0.0001<z is less than or equal to 0.01, and a is 1, 2, 3 and 8; b is 1, 2, 4, and the radiation range of the fluorescent powder is defined by lambda under the excitation of solar radiation1500nm to λ2=660nm。
The inventors will further describe this concept in the following. First, the phosphor material has a longer radiation wavelength under absorption of external radiation than the excitation light wavelength, and is called a "stokes" material. Similarly, the main components of the phosphor are divided into:
-a sulphide phosphor;
-halide phosphors;
-nitride phosphor; and
-oxide phosphors.
The main components of the material are oxygen, phosphoric acid, silicate, aluminate, anion, cation and activating element.
The data of "" conversion component "" in the spectrum conversion must be introduced in the experiment, and the specific orthosilicate phosphor component is (Ba, Sr, Ca, Mg)8Si4O15.4F0.2Cl0.1N0.3:Eu2+The synthetic phosphor adopts a known method, such as that shown in patent publication No. 2008/0236667A 1, published by Soshchin N.P. of the inventor of the present invention at 10.2.2008, and + 2-valent activated ion Eu+2In which the sensitizing ion is group VII F-,Cl-And group V N3-。
The adopted fluorescent powder sample can be excited by ultraviolet light and has a neutral positionLinear particle diameter d50Not more than 0.5 μm and d90Not more than 3.6 μm, and a green light emission wavelength λ 521nm, the radiation wavelength of the phosphor extending to λ 630nm, the silicone polymer component comprising the mentioned silicate phosphor is introduced into an ultrasonic stirrer conventionally, the weight ratio of the phosphor being 0.001 to 10%. The inventors have observed that the particle size can be increased to d for phosphors incorporated therein505 microns.
As the inventor finds, the optimal weight ratio of the phosphor is 0.6-1.3% when the polysilicon is used. Using small particle diameter phosphors, an increase in the value of Δ V should likewise be achieved in polycrystalline silicon samplesOCWhen m is 0.23% at 1.457%, Δ V is 1.281% at 1%, and when the current density is increased from 0.96% to 3.5%, the weight ratio of the phosphor is decreased from 2.6% to 0.98% at m to obtain the optimum growth value FF, and similarly, Δ FF is 1% at m, the weight ratio of the phosphor is 1.2%.
The maximum effective growth rate of the monocrystalline silicon solar cell is delta FF more than 10%, and the average weight ratio of the fluorescent powder is 0.8-1.6%. This is typically referred to in figures 2a and 2b comparing the operation of a reflector plate of a polycrystalline silicon wafer and the subsequent composition of a luminescence conversion layer. Then, compared with a control polycrystalline silicon thin plate, smaller reflection is obtained in a short-wave wavelength excitation range, such a decrease may be that the energy absorbed by the fluorescent powder is 300-500 nm at a sub-band wavelength, and the reflection coefficient value of the composition is 50-100%.
The reflection coefficient was found to be similar to the lowering effect in the original single crystal silicon composition, and its absolute value was low. A low phosphor weight ratio polymer is required for amorphous silicon solar cells where the effective growth rate exceeds 20%. This exact numerical value was confirmed in experiments where the established silicon solar cell composition, the inventors' observations, was equally applicable to the use of both types of phosphors, not just the silicate phosphors described above.
The inventors also cite the phosphors mentioned as being predominantly of the rare earths aluminium and yttrium, the activator being cerium, whose composition has the stoichiometric formula shown below:
Ln3Al5(O1-pCxDyEz)12
wherein
Ln ═ Y and/or Gd and/or La and/or Ce and/or Pr and/or Yb and/or Nd and/or Lu,
C=Hal=F-1and/or Cl-1And/or Br-1And/or I-1,
D=Chal=S2-And/or Se2-,
E=N3-,
p=x/2+y+3z/2,
The phosphor stoichiometry is shown by the following values: x is more than or equal to 0.0001 and less than or equal to 0.01, y is more than 0.0001 and less than or equal to 0.01, and z is more than 0.0001 and less than or equal to 0.01.
A similar phosphor emission spectrum is disclosed in FIG. 4, shown in the specification, where the following numerical values refer to the phosphor emission from λ1490nm to lambda2At 720nm, the excitation light has a wavelength λ of 464nm, which is suitable for the maximum solar radiation spectrum.
The single crystal silicon reflection spectrum component is composed of organic silicon polymer introduced with aluminate fluorescent powder, as shown in figure 2, the reflection coefficient of the composite coating in the short wave region is reduced by 1.6-1.9 times.
In the experiment, the luminous effect of the aluminate fluorescent powder in the yellow spectral region is not much (the efficiency is increased by 10%), but the yellow spectral region efficiency can reach 18% under the condition of adopting the standard monocrystalline silicon solar energy component as shown in the KP2007011205 patent application -20 percent. The silicate phosphor composition can improve the parameters and can solve the defects of the aforementioned U.S. patent publication No. 2007/0295383A 1.
A further technical solution relates to organosilicon polymers and oxygen-containing phosphors for silicon solar cells, the stoichiometric formulae of the phosphors particles cited in the organosilicon polymers, for example yttrium, based on rare earths, ytterbium and neodymium activators being:
Ln(P1-nVn)O4
wherein Ln ═ Y and/or Gd and/or La and/or Ce and/or Pr and/or Yb and/or Nd and/or Lu, the change in the phosphor stoichiometric ratio n is 0.0001<n is less than or equal to 0.6, and the radiation wavelength of the fluorescent powder is from lambda under the excitation of sunlight1800nm to λ2=1060nm。
For similar phosphate-vanadate phosphors, the specific spectra were similar to those described by the inventors in U.S. patent publication No. 2008/0236667A 1, 10.2.2008, and the reflection parameter was observed to be at λ1700nm to λ2The phosphor particles have strong absorption of radiation, close to the infrared spectral region, in the 1000nm region. The radiation of the fluorescent powder in different types of silicon solar cells has light energy increased by 700-1000 nm. The maximum spectrum absorption external radiation area of the silicon solar cell is 1000-1200 nm. The weight ratio of the phosphate and vanadate fluorescent powder in the organic silicon polymer is 0.4-1.8%, and the central particle size of the fluorescent powder particles is d500.8 micron.
The re-radiation energy of the phosphors mentioned in the silicon solar cell sheets is greater, in which case a thicker (to 360 μm) single crystal silicon sheet structure can be used.
The solar cell mainly comprises a structure which is covered on a monocrystalline silicon cell and consists of oxygen-containing fluorescent powder and an organic silicon polymer, wherein oxygen-containing fluorescent powder particles are introduced, and the stoichiometric formula of the oxygen-containing fluorescent powder particles is shown as the following formula:
Ln2O2S1-qC2q
wherein Ln ═ Y and/or Gd and/or La and/or Ce and/orPr and/or Yb and/or Nd and/or Lu, C Hal F1-And/or Cl1-And/or Br1-And/or I1-The stoichiometric ratio of the fluorescent powder is 0.0001<q<0.5, and the fluorescent powder can be excited by sunlight in the near infrared light region.
According to the observation of the inventors, the ion Yb was activated for the oxygen-containing phosphor component introduced in the phosphor3+,Nd3+And Ce3+The presence of (a) reduces the surface reflection of the single crystal silicon or polycrystalline silicon, and the reflection in the wavelength region λ 720nm to λ 1100nm, and the spectral reflection of the single crystal silicon thin plate is analyzed in detail in the following fig. 2a and 2 b. The reflection coefficient is reduced by 10-30% in a short wave region. As shown in fig. 2b, the light emitting ion Yb is emitted in the region where λ 840-860nm+3The method has obvious influence, wherein the radiation of the ions can be seen, the silicon sheet has strong absorption, and the radiation absorption of the sulfur oxide fluorescent powder can relatively increase the electrode parameters of the silicon component by 4-16%.
These experimental data relating to the increase of the conversion efficiency of silicon solar cells are not only suitable for the specific phosphors mentioned, but also for mixtures thereof, in particular for silicate, sulfur oxide based phosphors, in a mixing ratio of 3: 1 to 2: 1. the weight ratio of the similar fluorescent powder mixture in the organic silicon polymer is 0.7-0.8%, and when the absolute efficiency of the battery is increased by 10.75%, the effective coefficient is increased by 4.05% in a delta FF mode.
The solar cell has the advantage of forming a luminescence converter in the form of a cover layer in contact with a monocrystalline silicon, polycrystalline silicon, amorphous silicon solar cell, the cover thickness of the conversion layer being 0.5 to 18 mg/cm2The reflection coefficient R is reduced to 50%.
The inventors found that, in the data of fig. 2a and 2b, when the thickness of the luminescence conversion layer on the surface of the polycrystalline silicon solar cell is changed to δ of 0.1 to 2.5mm in the case of single crystal silicon, the radiation excitation reflection coefficient R is reduced to R of 31% from 60%. The reflection coefficient of the surface of the silicon solar cell is reduced, the luminous activator is added, electrons and holes are generated in a p-n junction, the concentration of the electrons and the holes is increased, and the electrode parameters of the silicon solar cell are increased.
The inventors have found that also special luminescent converters rely on the dispersion of oxygen-containing inorganic phosphors. In summary, the micro phosphor particles that can be used in the luminescence conversion layer have a low weight ratio, and thus effectively improve the conductivity parameters of the solar cell. The inventor adopts inorganic phosphor containing oxygen during the experiment, and the optimal particle size is d50<1 micron, the best result being the use of a particle size d50Fluorescent powder (less than the maximum spectral wavelength of the silicon solar cell) with the particle size less than or equal to 0.8 micrometer. It has been found in experimental observations that the quantity d of cerium-containing aluminum garnet and nanoparticles derived from orthosilicate, boron, cerium, europium50Less than or equal to 0.2 μm, the maximum particle diameter of the phosphor should not exceed d974 μm, such particles are visually cohesive. Thus, the best choice for the particle value is 0.1. ltoreq. d.ltoreq.0.6. mu.m. In this case, the efficiency of the silicon solar cell increases by Δ η 15%.
A luminescence converter of phosphor and inorganic silicon composition having an oxygen-containing component similar to this has a high parameter value, wherein the particle size of the inorganic phosphor has a distribution composition d in the luminescence converter region50Not more than 0.8 micron, d97<4 microns, and the optimal concentration weight ratio of the fluorescent powder particles in the organic silicon polymer is 0.05-3%.
As described above, the present invention is mainly characterized in that the parameters for enhancing the solar cell using the inorganic silicon luminescence conversion converter are respectively:
-the dimensions of the monocrystalline silicon sheet are 6 inches;
-polycrystalline silicon sheet area size of 12cm2(ii) a And
-the area size of the amorphous silicon thin plate is 12cm2。
Table 2 is a reference description of parameters for three different types of solar cell components.
TABLE 2
| Type of ingredient | Current JSC,A | Voltage V0 | Effective coefficient FF | Absolute efficiency η of | % | ||
| 1 | Six inch single crystal silicon 6-- | 5.07 | 0.624 | 0.725 | 15.4 | +14.2 | |
| 2 | Six inch single crystal silicon 6-- | 5.28 | 0.632 | 0.727 | 15.8 | +12.4 | |
| 3 | The area is 12cm2Of polycrystalline silicon | 0.396 | 0.5826 | 0.6627 | 12.46 | +11.2 | |
| 4 | The area is 12cm2Of polycrystalline silicon | 0.388 | 0.5887 | 0.6641 | 11.93 | +16.4 | |
| 5 | The area is 12cm2Of polycrystalline silicon | 0.396 | 0.5902 | 0.674 | 13.02 | +5.4 | |
| 6 | The area is 12cm2Of polycrystalline silicon | 0.388 | 0.566 | 0.6853 | 11.90 | +20.3 | |
| 7 | Amorphous silicon chip (alpha Si) | 0.201 | 0.494 | 0.468 | 7.8 | +19.6 | |
| 8 | Standard single crystal silicon 6cm2 | 0.24 | 0.624 | 0.68 | 12.8 | 0 |
As shown by the data in Table 2, in increasing the conductivity parameter such as VOC,ISCAnd FF, the efficiency of the solar cell with different types of luminescence converters on the silicon structure composition is increased by 11.2-20.3%.
Specifically, the inventors of the present invention have studied a silicon solar cell comprising a monocrystalline silicon component having a converter composed of an inorganic silicon polymer and an oxygen-containing phosphor, and a solar cell component, wherein the size of the primary monocrystalline silicon is 4-6 inches, the thickness is δ 360 μm, and the efficiency is improved by 14%.
The second object of the invention of the silicon solar cell of the invention comprises a polycrystalline silicon, a luminescence conversion layer on an organosilicon polymer, wherein the polycrystalline silicon has a thickness of delta 220-360 micrometers and an area of 6-256 cm2And the efficiency is improved by 11.5 percent.
The third objective of the invention of the silicon solar cell comprises amorphous silicon and a luminescence converter, wherein the thickness of the alpha-Si of the amorphous silicon thin plate is 16-32 microns, and the efficiency is increased to 7%.
The present disclosure is one of the best modes for carrying out the invention, and it is obvious to those skilled in the art that various changes and modifications can be made without departing from the scope of the present invention.
Claims (10)
1. An organosilicon polymer is formed by aggregating thermoplastic polymer and oxygen-containing fluorescent powder, wherein the molecular weight of the organosilicon polymer is 10000-25000 carbon elements, the fluorescent powder introduced into the granular oxidation composition in the organosilicon polymer is derived from orthosilicate, aluminate, phosphate-vanadate and oxysulfide, the weight ratio of the fluorescent powder is 0.05-10%, and the fluorescent powder is synthesized into a luminescence conversion layer and is combined with the surface of a silicon solar cell in a covering way.
2. The silicone polymer of claim 1 wherein the silicone polymer incorporates silicate phosphor particles in the synthesis composition having the stoichiometric formula:
(Me2+O)a(Si(O1-pCxDyEz)2)b
wherein,
Me+2=Ba2+and/or Sr2+And/or Ca2+And/or Mg2+And/or Eu2+,
C=Hal=F-And/or Cl-And/or Br-And/or I-,
D=Chal=S2-And/or Se2-,
E=N3-,
p=x/2+y+3z/2,
The phosphor stoichiometry is shown by the following values: x is more than or equal to 0.0001 and less than or equal to 0.01, and x is more than or equal to 0.0001<y≤0.01,0.0001<z is less than or equal to 0.01, and a is 1, 2, 3 and 8; b is 1, 2, 4, and the radiation range of the fluorescent powder is defined by lambda under the excitation of solar radiation1500nm to λ2=660nm。
3. The silicone polymer of claim 1 wherein the silicone polymer incorporates in the synthesis components a phosphor having an aluminate component with the stoichiometric formula shown below:
Ln3Al5(01-pCxDyEz)12
wherein
Ln ═ Y and/or Gd and/or La and/or Ce and/or Pr and/or Yb and/or Nd and/or Lu,
C=Hal=F-and/or Cl-And/or Br-And/or I-,
D=Cha1=S2-And/or Se2-,
E=N3-,
p=x/2+y+3z/2,
The phosphor stoichiometry is shown by the following values: x is more than or equal to 0.0001 and less than or equal to 0.01 and 0.0001<y≤0.01,0.0001<z is less than or equal to 0.01; in addition, the radiation range of the fluorescent powder is lambda under the excitation of solar radiation light1490nm to lambda2=720nm。
4. The silicone polymer of claim 1 wherein the particles of synthetic phosphor referenced by the silicone polymer have the stoichiometric formula:
Ln(P1-nVn)O4
wherein
Ln ═ Y and/or Gd and/or La and/or Ce and/or Pr and/or Yb and/or Nd and/or Lu, the change of the phosphor stoichiometric ratio n being 0.0001<n is less than or equal to 0.6, and the radiation field of the fluorescent powder is defined by lambda under the excitation of sunlight1800nm to λ2=1060nm。
5. The silicone polymer of claim 1 wherein the stoichiometric formula of the synthetic phosphor particles referenced by the silicone polymer is as follows:
Ln2O2S1-qC2q
wherein
Ln ═ Y and/or Gd and/or La and/or Ce and/or Pr and/or Yb and/or Nd and/or Lu, C ═ Hal ═ F-And/or Cl-And/or Br-And/or I-The stoichiometric ratio of the fluorescent powder is 0.0001<q<0.5, and the fluorescent powder can be excited by sunlight close to the infrared light field.
6. A luminescence conversion layer comprising the organic silicon polymer containing phosphor particles according to claim 1 and in contact with the surface of a solar cell of polycrystalline silicon, single crystal silicon, amorphous silicon of the surface layer in the form of a covering layer having a thickness of δ of 0.5 to 3.8 mg/cm2The reflection coefficient R is less than 50%.
7. The luminescence conversion layer of claim 6, wherein the luminescence conversion layer is distributed over the luminescence conversion layerThe particle size of the phosphor is d50Less than or equal to 0.8 micron to d50>0.1 micron, and the optimal mass concentration is 0.05-3%.
8. A silicon solar cell comprising a luminescence converter having single crystal silicon with a size of 4 comprising the luminescence conversion layer of claim 6-6 inches, the thickness delta is 180-360 micrometers, and the conversion efficiency exceeds 14%.
9. A silicon solar cell comprising a luminescence converter having a polysilicon containing a luminescence conversion layer according to claim 6, the polysilicon thin film having a thickness δ of 220 to 360 μm and an efficiency improvement γ of 11.5%.
10. A silicon solar cell comprising a luminescence converter with amorphous silicon comprising a luminescence conversion layer according to claim 6 derived from a silicon thin film of α -Si with a thickness δ -16 to 32 microns with a 7% efficiency improvement.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074608A (en) * | 2010-10-21 | 2011-05-25 | 罗维鸿 | Conversion layer for solar cell and synergy thereof |
| CN104813484A (en) * | 2012-09-28 | 2015-07-29 | 国家科学研究中心 | Photovoltaic modules with high conversion efficiency |
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2008
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102074608A (en) * | 2010-10-21 | 2011-05-25 | 罗维鸿 | Conversion layer for solar cell and synergy thereof |
| CN102074608B (en) * | 2010-10-21 | 2012-08-29 | 罗维鸿 | Conversion layer for solar cell and synergy thereof |
| CN104813484A (en) * | 2012-09-28 | 2015-07-29 | 国家科学研究中心 | Photovoltaic modules with high conversion efficiency |
| CN104813484B (en) * | 2012-09-28 | 2017-09-29 | 国家科学研究中心 | photovoltaic module with high conversion efficiency |
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