[go: up one dir, main page]

CN101446627B - Vertical variable magnetic field device - Google Patents

Vertical variable magnetic field device Download PDF

Info

Publication number
CN101446627B
CN101446627B CN2008102402719A CN200810240271A CN101446627B CN 101446627 B CN101446627 B CN 101446627B CN 2008102402719 A CN2008102402719 A CN 2008102402719A CN 200810240271 A CN200810240271 A CN 200810240271A CN 101446627 B CN101446627 B CN 101446627B
Authority
CN
China
Prior art keywords
permanent magnet
magnetic field
variable magnetic
field device
vertical variable
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN2008102402719A
Other languages
Chinese (zh)
Other versions
CN101446627A (en
Inventor
陈晨
贾锐
李维龙
姚嘉宁
朱晨昕
李昊峰
刘明
刘新宇
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Zhongke Micro Investment Management Co ltd
Original Assignee
Institute of Microelectronics of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Microelectronics of CAS filed Critical Institute of Microelectronics of CAS
Priority to CN2008102402719A priority Critical patent/CN101446627B/en
Publication of CN101446627A publication Critical patent/CN101446627A/en
Application granted granted Critical
Publication of CN101446627B publication Critical patent/CN101446627B/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Investigating Or Analyzing Materials By The Use Of Magnetic Means (AREA)

Abstract

The invention relates to a vertical variable magnetic field device, which is applied to a low-temperature probe station system, and comprises: the sample holder comprises a top permanent magnet, a bottom permanent magnet, a sample holder and a plurality of supporting screws, wherein one ends of the supporting screws are fixed on the sample holder; the top permanent magnet is fixed on the support screw; the bottom permanent magnet is arranged on the sample seat. The device of the invention isUnder the condition that the original high vacuum is kept in the cavity of a TTP4 low-temperature probe station system of a company, the surface magnetic linear density of the surface of a sample is changed by accurately adjusting the height of the upper top permanent magnet, so that the effect of changing the magnetic field is achieved. The invention has the advantages of simple and easy scheme, low cost, stability, reliability, large magnetic field change range and the best compatibility with the system, and is beneficial to wide popularization and application.

Description

Vertical variable magnetic field device
Technical field
The present invention relates to a kind of magnetic field device, particularly relate to a kind of vertical variable magnetic field device that is applied to the variable magnetic field intensity of low-temperature probe station system.
Background technology
Existing based on
Figure G2008102402719D00011
But the vertical variable magnetic field device of company's T TP4 low-temperature probe station system has been brought into play irreplaceable practicality effect in this system.Vertical variable magnetic field device has constituted the magnetic field scheme of low temperature Hall effect test macro, becomes the important component part of the low temperature Hall effect test macro of building based on this system. Realize by electromagnet (Model EM4 and ModelEM7) or cryogenic magnet by applying in the cavity outside in magnetic field in the optional accessory that company provides for this low-temperature probe station system.
For electromagnet, above-mentioned two electromagnet can reach the purpose that applies variable magnetic field, but this electromagnet is placed on the cavity outside, is coupled to the sample place by chamber outer wall, certainly leads to the change of Distribution of Magnetic Field, makes to measure to produce error; In addition, it is parallel with the sample surface that institute adds magnetic direction, can't finish the test of Hall effect, measures as need and also need customize special-purpose sample stage.And this electromagnet apparatus equipment is huge, takes up room.
For the cryogenic magnet scheme, though can utilize the superconduction winding to apply variable magnetic field, must additionally provide low temperature environment, can't at room temperature finish test; And select specific winding material for use, this scheme can reach split-hair variable magnetic field effect, but apparatus expensive, cost height are in addition, supporting raw material as: liquid helium is monopolized by the U.S., buys difficulty, price is high.
So far, also not can be used for
Figure G2008102402719D00013
The magnet arrangement of the variable magnetic field of company's T TP4 low-temperature probe station system.
In view of this, above-mentioned existing
Figure G2008102402719D00014
There is defective in the variable magnetic field scheme of company's T TP4 low-temperature probe station system, the inventor is based on being engaged in this type of product design manufacturing abundant for many years practical experience and professional knowledge, actively studied innovation,, make it have more practicality in the hope of developing a kind of new vertical variable magnetic field device.
Summary of the invention
Fundamental purpose of the present invention is, overcomes existing
Figure DEST_PATH_GSB00000376038200011
The defective that the variable magnetic field scheme of company's T TP4 low-temperature probe station system exists, and provide a kind of new vertical variable magnetic field device, technical matters to be solved is to make it apply variable magnetic field perpendicular to sample surfaces, do not changing condition of high vacuum degree in the chamber, additionally do not increase under the prerequisite of external unit, realize the test of high vacuum variable magnetic field Hall effect, thereby be suitable for practicality more.
The object of the invention to solve the technical problems realizes by the following technical solutions.A kind of vertical variable magnetic field device according to the present invention proposes is applied to low-temperature probe station system, and this device comprises: top permanent magnet, bottom permanent magnet, sample stage and a plurality of studdle, and described studdle one end is fixed on the described sample stage; Described top permanent magnet is fixed in described studdle; Described bottom permanent magnet is arranged on the described sample stage.
The object of the invention to solve the technical problems also can be applied to the following technical measures to achieve further.
Preferably, aforesaid vertical variable magnetic field device, the geometric center of the geometric center of wherein said top permanent magnet and bottom permanent magnet is on the same perpendicular line.
Preferably, aforesaid vertical variable magnetic field device, the material of described bottom permanent magnet and top permanent magnet are NdFeB material.
Preferably, aforesaid vertical variable magnetic field device, described top permanent magnet is provided with a plurality of through holes, and described studdle passes described through hole, and adopts nut that top permanent magnet and studdle are fixed.
Preferably, aforesaid vertical variable magnetic field device, described top permanent magnet and bottom permanent magnet are that different pole pair should be provided with, and attract each other between top permanent magnet and the bottom permanent magnet.
Preferably, aforesaid vertical variable magnetic field device, the geometric center of described top permanent magnet is provided with the observation through hole of vertical direction.
Preferably, aforesaid vertical variable magnetic field device, described sample stage is provided with the groove that caves in, and described bottom permanent magnet is arranged in this groove.
Preferably, aforesaid vertical variable magnetic field device, the lower surface of described bottom permanent magnet and the lower surface of sample stage are in the same plane.
Preferably, aforesaid vertical variable magnetic field device, four jiaos of described sample stage are provided with through hole.
Preferably, aforesaid vertical variable magnetic field device, described through hole are inverted convex through hole.
Preferably, aforesaid vertical variable magnetic field device, described top permanent magnet is a rectangular parallelepiped, and its bottom surface and end face are square.
Preferably, aforesaid vertical variable magnetic field device, described bottom permanent magnet is a right cylinder.
By technique scheme, vertical variable magnetic field device of the present invention has following advantage at least:
(1) vertical variable magnetic field device of the present invention is compared with the cryogenic magnet scheme, need not the superconduction winding, need not the support of especially powering, and need not the refrigeration low-temperature environment, and this device is simple, has saved cost.
(2) vertical variable magnetic field device of the present invention applies magnetic direction perpendicular to sample surfaces (that is: sample table top).When measuring Hall effect, apply magnetic field with level and compare, need not additionally to add sample stage.
(3) vertical variable magnetic field device of the present invention is arranged on the vacuum cavity inside of low-temperature probe station system, when keeping original condition of high vacuum degree, magnetic field can not put on sample surfaces by any medium, has guaranteed that the Distribution of Magnetic Field of original design can be because of changing by medium.
(4) vertical variable magnetic field device of the present invention adopts permanent magnet, and magnetic field intensity is big, can reach even be higher than 5000 Gausses, and magnetic field intensity can not change in time, and is reliable and stable.
(5) vertical variable magnetic field device of the present invention reaches the change magnetic field intensity by changing density of line of magnetic force, realizes the variable magnetic field purpose.
In sum, the vertical variable magnetic field device of unique texture of the present invention has above-mentioned many advantages and practical value, has large improvement technically, and has produced the low and practical effect of cost.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of instructions, below with preferred embodiment of the present invention and conjunction with figs. describe in detail as after.
Description of drawings
Fig. 1 is the perspective view of vertical variable magnetic field device of the present invention.
Fig. 2 is the structural representation of studdle.
Fig. 3 is the structural representation of top permanent magnet.
Fig. 4 is the structural representation of bottom permanent magnet.
Fig. 5 is the structural representation of sample stage.
Embodiment
Reach technological means and the effect that predetermined goal of the invention is taked for further setting forth the present invention, below in conjunction with accompanying drawing and preferred embodiment, to its embodiment of vertical variable magnetic field device, structure, feature and the effect thereof that foundation the present invention proposes, describe in detail as after.
Seeing also shown in Figure 1ly, is the perspective view of vertical variable magnetic field device of the present invention.Magnetic field device of the present invention is to be applied to
Figure DEST_PATH_GSB00000376038200031
Company's T TP4 cold probe platform, this device comprises: top permanent magnet 1, bottom permanent magnet 2, sample stage 4 and a plurality of studdle 3.Described studdle 3 is supported between top permanent magnet 1 and the sample stage 4, and described bottom permanent magnet 2 is arranged on the sample stage 4.Form magnetic field in the space between top permanent magnet 1 and bottom permanent magnet 2 perpendicular to sample stage 4.Except that top permanent magnet 1 and bottom permanent magnet 2, other parts are all non-magnetic material of the same race and make in the magnetic field device of this device, for example, and aluminum or aluminum alloy, copper or aldary, austenitic stainless steel.
Seeing also shown in Figure 2ly, is the structural representation of studdle.The quantity of described studdle 3 is 4, adopts the material with certain physical strength to make, and for example adopts the red copper material.The length of all studdles is identical, for example presses
Figure DEST_PATH_GSB00000376038200032
The TTP4 low-temperature probe station system chamber design length of company, each studdle is designed to 54mm.The sidewall of every studdle 3 is provided with continuous screw thread, and the specification of this studdle 3 is M6.In the lower end of studdle 3 is that diameter is the bolt of M3, is used for cooperating with four M3 screw sockets on the TTP4 cold probe platform pedestal, sample stage 4 is tightened be fixed on this pedestal.
Seeing also shown in Figure 3ly, is the structural representation of top permanent magnet 1, and wherein (a) is front view, (b) is side view.This top permanent magnet 1 adopts NdFeB material, and it is shaped as rectangular parallelepiped, and its bottom surface and end face be square.Offer the observation through hole 11 that runs through its end face and bottom surface of vertical direction in the central authorities of this top permanent magnet 1, so that observation sample and satisfy the requirement of sample illumination.This through-hole diameter is Φ 25 to Φ 30.Preferable, described observation through hole is circular, its center of circle is the geometric center of top permanent magnet.The through hole 12 that to offer four diameters on four jiaos of this top permanent magnet 1 be Φ 6.5 is used to pass above-mentioned studdle 3.On each studdle, be provided with nut 5, be used for top permanent magnet is fixed.By the position of setting nut 5, can adjust the height of top permanent magnet 1, thereby match with bottom permanent magnet 2, form transformable magnetic field.
See also shown in Figure 4, be the bottom permanent magnet structural representation, wherein (a) is front view, (b) is side view.This bottom permanent magnet 2 is a diameter of phi 32, and thickness is the right cylinder of 5mm, adopts NdFeB material to make.
Seeing also shown in Figure 5ly, is the structural representation of sample stage, and wherein (a) is front view, is side view (b) and (c).Described sample stage 4 be according to
Figure DEST_PATH_GSB00000376038200041
The TTP4 low-temperature probe station system base size design of company, be shaped as rectangular parallelepiped.On four jiaos of sample stage, be provided with four through holes 41 of perforation.This through hole 41 is inverted convex, adopts bolt 6 to pass through hole 41 sample stage is fixed on the above-mentioned low-temperature probe station system pedestal.The lower end of described studdle 3 is screwed on the position of broad of through hole 41.Be provided with the groove 42 that caves in the bottom surface of sample stage 4, be used to hold described bottom permanent magnet 2.Described top permanent magnet 1 and bottom permanent magnet 2 different pole pairs should be provided with, and make between top permanent magnet and the bottom permanent magnet to attract each other.And the geometric center of the geometric center of described top permanent magnet 1 and bottom permanent magnet 2 is on the same perpendicular line, so that formed magnetic field is perpendicular to the testing sample surface.Preferably, the degree of depth of described groove 42 is identical with the thickness of bottom permanent magnet 2, and the lower surface of bottom permanent magnet and the lower surface of sample stage are in the same plane.In the present embodiment, detect by gaussmeter, described magnetic intensity should reach or be higher than 5000 Gausses.
In addition, also can fix sample stage, but make the thinner part in lower end of studdle 3 pass through hole 42, and directly sample stage 4 is fixed on the low-temperature probe station system pedestal without bolt 6.
As the device that above-mentioned structure constitutes, it can control distance between top permanent magnet and the bottom permanent magnet by rotation nut 5, thereby provides magnetic field intensity variable magnetic field, and this apparatus structure simply need not to power, and also need not matching component.Because the variable range of vertical sample stage direction is much larger than the variable range in the chamber interior horizontal direction, therefore, the change of magnetic field strength scope that device of the present invention provides applies the magnetic field scheme apparently higher than level.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, though the present invention discloses as above with preferred embodiment, yet be not in order to limit the present invention, any those skilled in the art, in not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be the content that does not break away from technical solution of the present invention, according to technical spirit of the present invention to any simple modification that above embodiment did, equivalent variations and modification all still belong in the scope of technical solution of the present invention.

Claims (12)

1.一种垂直可变磁场装置,其特征在于其应用于低温探针台系统,该装置包括:顶部永磁铁、底部永磁铁、样品台以及多个支撑螺杆,1. A vertical variable magnetic field device is characterized in that it is applied to a cryogenic probe station system, and the device comprises: a top permanent magnet, a bottom permanent magnet, a sample stage and a plurality of supporting screws, 所述的支撑螺杆一端固定于所述的样品台上;One end of the support screw is fixed on the sample stage; 所述的顶部永磁铁固定于所述的支撑螺杆;The top permanent magnet is fixed to the support screw; 所述的底部永磁铁设置在所述样品台上。The bottom permanent magnet is arranged on the sample stage. 2.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的顶部永磁铁的几何中心与底部永磁铁的几何中心处在同一垂直线上。2. The vertical variable magnetic field device according to claim 1, wherein the geometric center of the top permanent magnet and the geometric center of the bottom permanent magnet are on the same vertical line. 3.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的底部永磁铁和顶部永磁铁的材料为钕铁硼材料。3. The vertical variable magnetic field device according to claim 1, wherein the bottom permanent magnet and the top permanent magnet are made of NdFeB material. 4.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的顶部永磁铁设有多个通孔,所述的支撑螺杆穿过所述的通孔,并采用螺母将顶部永磁铁和支撑螺杆固定。4. The vertical variable magnetic field device according to claim 1, wherein the top permanent magnet is provided with a plurality of through holes, the supporting screw passes through the through holes, and nuts are used to connect the top Permanent magnets and support screws are fixed. 5.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的顶部永磁铁和底部永磁铁为相异的磁极对应设置,顶部永磁铁和底部永磁铁之间相互吸引。5 . The vertical variable magnetic field device according to claim 1 , wherein the top permanent magnet and the bottom permanent magnet are arranged corresponding to different magnetic poles, and the top permanent magnet and the bottom permanent magnet attract each other. 6.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的顶部永磁铁的几何中心设有垂直方向的观测通孔。6. The vertical variable magnetic field device according to claim 1, characterized in that, the geometric center of the top permanent magnet is provided with a vertical observation through hole. 7.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的样品台设有内陷的凹槽,所述的底部永磁铁设置在该凹槽内。7. The vertical variable magnetic field device according to claim 1, wherein the sample stage is provided with an indented groove, and the bottom permanent magnet is arranged in the groove. 8.根据权利要求7所述的垂直可变磁场装置,其特征在于,所述的底部永磁铁的下表面与样品台的下表面处在同一平面内。8. The vertical variable magnetic field device according to claim 7, wherein the lower surface of the bottom permanent magnet and the lower surface of the sample stage are in the same plane. 9.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的样品台的四角设有通孔。9 . The vertical variable magnetic field device according to claim 1 , wherein through holes are provided at four corners of the sample stage. 10.根据权利要求9所述的垂直可变磁场装置,其特征在于,所述的通孔为倒置的凸字型通孔。10 . The vertical variable magnetic field device according to claim 9 , wherein the through hole is an inverted convex-shaped through hole. 11 . 11.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的 顶部永磁铁为长方体,且其底面和顶面为正方形。11. vertical variable magnetic field device according to claim 1, is characterized in that, described top permanent magnet is cuboid, and its bottom surface and top surface are square. 12.根据权利要求1所述的垂直可变磁场装置,其特征在于,所述的底部永磁铁为圆柱体。 12. The vertical variable magnetic field device according to claim 1, wherein the bottom permanent magnet is a cylinder. the
CN2008102402719A 2008-12-18 2008-12-18 Vertical variable magnetic field device Expired - Fee Related CN101446627B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008102402719A CN101446627B (en) 2008-12-18 2008-12-18 Vertical variable magnetic field device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN2008102402719A CN101446627B (en) 2008-12-18 2008-12-18 Vertical variable magnetic field device

Publications (2)

Publication Number Publication Date
CN101446627A CN101446627A (en) 2009-06-03
CN101446627B true CN101446627B (en) 2011-04-06

Family

ID=40742404

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2008102402719A Expired - Fee Related CN101446627B (en) 2008-12-18 2008-12-18 Vertical variable magnetic field device

Country Status (1)

Country Link
CN (1) CN101446627B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261439B (en) * 2015-10-30 2024-09-17 黑龙江大学 Small-size adjustable constant magnetic field device
CN108845277B (en) * 2018-06-22 2024-10-08 李�浩 Magnetic field observer
CN109507561B (en) * 2018-11-19 2020-08-18 福建师范大学 Semiconductor characteristic stability measuring system based on variable magnetic field and free electrode
CN114126178B (en) * 2021-11-19 2023-01-13 北京航空航天大学 Magnetic field variable E multiplied by B probe
CN114354413B (en) * 2021-12-16 2024-11-12 惠州市金山电子有限公司 A kind of brocade thread life tester, test system and test method

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251791A (en) * 1978-12-08 1981-02-17 Kanetsu Kogyo Kabushiki Kaisha Magnetic base
US4468649A (en) * 1982-11-24 1984-08-28 Kanetsu Kogyo Kabushiki Kaisha Switchable permanent magnetic chuck
US5410287A (en) * 1994-04-05 1995-04-25 General Electric Company Open MRI magnet with uniform magnetic field
CN1526359A (en) * 2003-03-07 2004-09-08 Ge医疗系统环球技术有限公司 Magnetic resonance imaging system
CN1245725C (en) * 1999-12-06 2006-03-15 澳大利亚儿童玩具控股有限公司 Switchable permanent magnetic device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4251791A (en) * 1978-12-08 1981-02-17 Kanetsu Kogyo Kabushiki Kaisha Magnetic base
US4468649A (en) * 1982-11-24 1984-08-28 Kanetsu Kogyo Kabushiki Kaisha Switchable permanent magnetic chuck
US5410287A (en) * 1994-04-05 1995-04-25 General Electric Company Open MRI magnet with uniform magnetic field
CN1245725C (en) * 1999-12-06 2006-03-15 澳大利亚儿童玩具控股有限公司 Switchable permanent magnetic device
CN1526359A (en) * 2003-03-07 2004-09-08 Ge医疗系统环球技术有限公司 Magnetic resonance imaging system

Also Published As

Publication number Publication date
CN101446627A (en) 2009-06-03

Similar Documents

Publication Publication Date Title
CN101446627B (en) Vertical variable magnetic field device
CN102072790B (en) Device for measuring micro impulse
JP5111691B1 (en) Superconducting magnet and adjustment method thereof
CN201269843Y (en) An experimental fixture for testing the compressive mechanical properties of materials
CN206974936U (en) Vacuum magnetothermal effect measuring instrument sample holding clamp
CN209765851U (en) magnetofluid demonstration instrument based on magnet array
CN107219444A (en) A kind of transformer suspended discharge analogue means
CN104535946B (en) A Specific Magnetic Susceptibility Meter
CN206935426U (en) A kind of portable steel experimental bench
CN103247407A (en) Magnetic field generator
CN102426812B (en) High-temperature superconducting comprehensive experiment instrument
CN104090249B (en) A kind of magnetic-field measurement structure and measuring method
CN105357920A (en) Wall-mounted electronic equipment
CN110599873A (en) Teaching device for measuring magnetic distance and magnetic force
CN205049264U (en) High gradient high -intensity magnetic field magnetic suspension characteristic testing arrangement
CN107797081A (en) A kind of System and method for of the magnetic field size of measurement indirectly
CN209343074U (en) A kind of electrical measurement verifying attachment of liquid crystal display die set
CN103887036B (en) A kind of gradient fields electric magnet measured for permanent magnet temperature coefficient open circuit
CN202677681U (en) Lenz law demonstrator
CN103675717B (en) A kind of device for measuring magnetic field
CN207371565U (en) A kind of Physical Chemistry Experiment instrument easy to remove
CN208751425U (en) A kind of large-scale, super-huge conical bearing assembly height measurement device
RU2008101943A (en) ADJUSTABLE MAGNETIC FIELD GENERATOR BASED ON HALBAKH STRUCTURES
CN203760243U (en) Gradient field electromagnet for permanent magnet temperature coefficient open circuit measurement
CN201886855U (en) Magnetic circuit for nuclear magnetic resonance microscopic detection chip

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20220302

Address after: 100029 room 328, building 15, 3 Beitucheng West Road, Chaoyang District, Beijing

Patentee after: Beijing Zhongke micro Investment Management Co.,Ltd.

Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3

Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20110406

CF01 Termination of patent right due to non-payment of annual fee