CN101471388A - Optoelectronic semiconductor device - Google Patents

Abstract

One embodiment of the present invention discloses an optoelectronic semiconductor device, which includes a semiconductor system capable of converting light energy into electrical energy, an interface layer formed on at least two surfaces of the semiconductor system, a conductor, and an electrical contact electrically connecting the semiconductor system and the conductor.

Description

Optoelectronic semiconductor device

technical field

The present invention relates to an optoelectronic semiconductor device and its manufacturing method, in particular to an optoelectronic semiconductor device with a combined structure formed of conductors and non-conductors.

Background technique

A common structure of a conventional LED includes a growth substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer between the two semiconductor layers. A reflective layer for reflecting light from the light-emitting layer is also optionally formed in the structure. In some cases, in order to improve at least one of the optical, electrical, and mechanical properties of the light-emitting diode, an appropriately selected material will be used to replace the growth substrate as a carrier for carrying other structures except the growth substrate, For example: metal or silicon will be used to replace the sapphire substrate on which the nitride is grown. The growth substrate can be removed by etching, grinding, or laser removal. In addition, light-transmitting oxides can also be used in LED structures to improve current spreading performance.

There are several ways for the substituting carrier to make ohmic contact with the structures formed on the growth substrate. One of the related materials can refer to E. Fred Schubert, "Light-Emitting Diodes", Chapter 9.6, 2006. In addition, finished LEDs are formed after dicing from wafers. How to use appropriate methods to protect the semiconductor layer during the dicing process is also an issue of concern. It is a common protection method to form a passivation layer on the side surface of the semiconductor layer before cutting. However, the associated steps to form the protective layer must generally be carefully controlled to avoid negatively affecting diode performance.

Contents of the invention

An optoelectronic semiconductor device according to an embodiment of the present invention includes a semiconductor system capable of converting light energy to electrical energy, an interface layer formed on at least two surfaces of the semiconductor system, an electrical conductor, and an electrical contact .

In addition, the optoelectronic semiconductor device of the present invention has several preferred embodiments as follows. The aforementioned at least two surfaces include a side surface and a surface facing the conductor. The conductive body preferably has sufficient strength to support the semiconductor system, for example, the thickness or rigidity of the conductive body is greater than that of the semiconductor system. More preferably, the conductor is a non-semiconductor material. Furthermore, electrical contacts pass through the interface layer and electrically connect the semiconductor system with the electrical conductor. The interface layer has a refractive index between the semiconductor system and the ambient medium.

In addition, in several other embodiments of the present invention, the optoelectronic semiconductor device can have several modifications as follows: a reflector can be formed between the semiconductor system and the conductor, and can reflect light from the semiconductor system. A first bonding layer and a second bonding layer can be respectively formed on opposite sides of the electrical contacts and electrically connected to each other. A first bonding layer is electrically connected to the semiconductor system, and at least part of the electrical contacts penetrate the first bonding layer. A first bonding layer is electrically connected with the semiconductor system and reflects light from the semiconductor system.

In another two embodiments, one, the optoelectronic semiconductor device of the present invention further comprises a first bonding layer, which is electrically connected to the semiconductor system; and a reflector, which is located between the first bonding layer and the semiconductor system, and reflects Light originating from semiconductor systems. Second, the optoelectronic semiconductor device includes a reflector, which is located between the electrical contact and the semiconductor system, and the electrical contact is in contact with the reflector.

In each embodiment of the optoelectronic semiconductor device described above, the variation rule of the spacing between the electrical contacts is selected from the group consisting of definite periodicity, variable periodicity, quasi-periodicity, proportional series, and randomness. also. The shape of the electrical contact is selected from rectangle, circle, ellipse, triangle, hexagon, irregular shape, and the combination of the above shapes. Furthermore, the electrical contact can further include a rough surface.

The following changes are further disclosed in several embodiments of the present invention. The optoelectronic semiconductor device further includes a first interposer electrically connected with the semiconductor system; and a second interposer formed on the electrical contact and between the first interposer and the electrical contact. The optoelectronic semiconductor device further includes an electrode formed on the semiconductor system; and an insulating region corresponding to the position of the electrode and substantially on the same level as the electrical contact. The insulating region can also be formed on a different level from the electrical contact as required.

This application still discloses several other embodiments. First, in an optoelectronic semiconductor device, the interface layer includes a wavelength conversion material. Second, the optoelectronic semiconductor device includes a passive light-emitting layer formed on a surface of the semiconductor system opposite to the electrical contact, wherein the passive light-emitting layer can emit an output light in response to an input light generated from the semiconductor system, and output The light has a different wavelength or spectrum than the input light. Third, the optoelectronic semiconductor device includes a light extraction surface, which is formed on a main light output surface of the optoelectronic semiconductor device, and the light extraction surface is selected from rough surfaces, regular protrusions and depressions, and irregular protrusions. A group consisting of a concave structure and a photonic crystal.

Description of drawings

1A-1C show the manufacturing process of an optoelectronic semiconductor device according to an embodiment of the present invention;

2A to 2D show cross-sectional views of an optoelectronic semiconductor device according to another embodiment of the present invention;

3A and 3B show an optoelectronic semiconductor device according to an embodiment of the present invention;

4A and 4B show an optoelectronic semiconductor device with insulating regions according to another embodiment of the present invention;

5 shows an optoelectronic semiconductor device with insulating regions according to an embodiment of the invention;

6A-6C show an optoelectronic semiconductor device according to yet another embodiment of the present invention;

7 shows an optoelectronic semiconductor device with a passive light-emitting layer according to an embodiment of the present invention;

FIG. 8 shows an optoelectronic semiconductor device with double reflectors according to an embodiment of the invention;

FIG. 9 shows an optoelectronic semiconductor device with a structured light-emitting surface according to an embodiment of the present invention;

Figure 10 shows an optoelectronic semiconductor device according to an embodiment of the present invention; and

FIG. 11 shows an optoelectronic semiconductor device according to another embodiment of the invention.

Explanation of reference signs

10 Opto-semiconductor device 17 Second bonding layer

11 Temporary substrate 18 Electrical contacts

12 Semiconductor system 18’ electrical contacts

13 reflector 19A insulation area

13A Lower reflector 19B Insulation area

13B Upper reflector 20A First interposer

14 1st bonding layer 20B 2nd intermediary layer

15 Interface layer 21 Wavelength conversion material

15A upper interface layer 21A wavelength conversion material

151 Passive light-emitting layer 21B Wavelength conversion material

152 Connection layer 22 Upper electrode

153 Empty area 23 Lower electrode

16 conductors 24 electrical contacts

Detailed ways

Embodiments of the present invention are described below with reference to the accompanying drawings.

As shown in FIG. 1A, firstly, a semiconductor system 12 is formed on a temporary substrate 11. The semiconductor system 12 is, for example, a light-emitting diode (Light-Emitting Diode; LED), a laser diode (Laser Diode; LD), a solar cell (Solar Cell), etc. A semiconductor device that converts photoelectric energy. However, the term "semiconductor system" in this specification does not mean that all subsystems or units in the system are semiconductor materials, and other non-semiconductor materials, such as metals, oxides, insulators, etc., can be integrated here as needed in semiconductor systems.

Taking a light-emitting diode as an example, its structure includes at least two semiconductor layers with different electrical properties, polarity or doping, and a light-emitting layer (Light-Emitting Layer) between the two semiconductor layers, or called an active layer. (Active Layer). The emission spectrum of LEDs can be adjusted by changing the composition of the constituent materials. Materials generally used at present are such as aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and the like. In addition, the light-emitting layer structure is such as: single heterostructure (single heterostructure; SH), double heterostructure (double heterostructure; DH), double-side double heterostructure (double-side double heterostructure; DDH), or multilayer quantum wells (multi-quantum well; MQW), moreover, adjusting the logarithm of the quantum well can also change the emission wavelength. The temporary substrate 11 is used to grow or carry the semiconductor system 12. Applicable materials include but not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), sapphire (Sapphire), silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), glass, composite material (Composite), diamond, CVD diamond, and diamond-like carbon (Diamond-Like Carbon; DLC) wait.

After the semiconductor system 12 is formed on the temporary substrate 11, the reflector 13 can be selectively formed to reflect light directly or indirectly from the light-emitting layer toward a specific direction. The reflector 13 is metal such as silver (Ag), aluminum (Al), gold (Au), copper (Cu), titanium (Ti), or a distributed Bragg reflector (Distributed Bragg Reflector; DBR). The reflector 13 may cover all or part of the surface of the semiconductor system 12 .

After the reflector 13 is formed, the first bonding layer 14 is formed to connect with devices or structures described later. The material or structure of the first bonding layer 14 depends on the bonding technique employed. If metal bonding (Metal Bonding) technology is used, the material of the first bonding layer 14 can be indium (In), palladium (Pd), gold (Au), chromium (Cr), or an alloy of the aforementioned materials; ) technology, the material of the first bonding layer 14 can be epoxy resin (Epoxy), benzocyclobutene (benzocyclobutene; BCB), SU-8 photoresist; if using eutectic bonding (Eutectic Bonding), the first A material of the bonding layer 14 includes but not limited to gold (Au), tin (Sn), indium (In), germanium (Ge), zinc (Zn), beryllium (Be), and silicon (Si).

Next, use Inductively Coupled Plasma (Inductively Coupled Plasma; ICP) or other applicable dry etching techniques to etch the semiconductor system 12 and the layers covered thereon until a portion of the temporary substrate 11 is exposed, such as removing the semiconductor system 12 and the semiconductor system 12 in FIG. 1A Peripheral portions of the upper stacks 13 and 14; or, at least etched to the position of the light-emitting layer in the LED. Spin coating is then used to form an interfacial layer (Interfacial Layer) 15 covering the semiconductor system 12 and the layers covered thereon. For example, in FIG. 1A , the interface layer 15 covers the semiconductor system 12 , the side surfaces of the reflector 13 and the first bonding layer 14 , and the upper surface of the first bonding layer 14 . The interfacial layer 15 is between the semiconductor system 12 and the environment medium, and the material for the interface layer 15 may be insulating materials such as epoxy resin (Epoxy) and benzocyclobutene (benzocyclobutene; BCB).

In addition, the conductor 16 is prepared, and the second bonding layer 17 and the electrical contacts 18 are formed thereon. The conductor 16 is used to carry the semiconductor system 12 and serve as a current channel. Generally, it should have sufficient strength to form a stable structure. The material is such as germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), Conductive materials such as silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), copper (Cu), and aluminum (Al). The portion of the conductor 16 can be an independent structure as shown in FIG. 1A , and can be combined with related structures of the semiconductor system 12 in a specific manner. On the other hand, the conductor 16 can also be formed by electroplating, bonding, or deposition after the electrical contact 18 is completed on the semiconductor system 12 .

The material selection of the second bonding layer 17 can refer to the material of the above-mentioned first bonding layer 14 , and the materials of the first bonding layer 14 and the second bonding layer 17 can be different or the same. In addition, in addition to the aspects shown in the drawings, the first bonding layer 14 and the second bonding layer 17 can also be used alternatively. The material of the electrical contact 18 is such as indium (In), tin (Sn), aluminum (Al), silver (Ag), gold (Au), gold/beryllium (Au/Be), gold/germanium (Au/Ge) , Gold/Zinc (Au/Zn), Nickel (Ni), Lead (Pb), Lead/Tin (Pb/Sn), Palladium (Pd), Platinum (Pt), Zinc (Zn), Germanium (Ge), Titanium (Ti), copper (Cu), chromium (Cr), etc. In addition, if a single material or structure can meet the specification requirements of three or any two of the conductor 16 , the second bonding layer 17 , and the electrical contact 18 , then these corresponding parts can be integrated into a single unit.

After the above preparations are completed, the interface layer 15 is brought into contact with the second bonding layer 17 . At this time, the electrical contact 18 will press and penetrate the interface layer 15 , and at least part of the electrical contact 18 will pass through the interface layer 15 and make electrical contact with the first bonding layer 14 , as shown in FIG. 1B .

Next, the temporary substrate 11 is removed by wet etching, dry etching, mechanical grinding, or laser removal. After that, the upper electrode 22 and the lower electrode 23 are respectively formed on the semiconductor system 12 and the conductor 16 . However, the lower electrode 23 can also be formed on the conductor 16 before the semiconductor system 12 is combined with the conductor 16 . In addition, if the conductor 16 has the necessary characteristics as an electrode, it can also serve as an electrode. In this way, the device 10 does not need to form an independent lower electrode 23 . If the optoelectronic semiconductor device 10 is at the wafer level, the wafer needs to be diced to form a single optoelectronic semiconductor device 10 . The structure resulting from the multiple steps described above is shown in Figure 1C. At least one material forming the electrode 22 and the electrode 23 can be indium (In), tin (Sn), aluminum (Al), silver (Ag), gold (Au), gold/beryllium (Au/Be) laminated layers, Gold/germanium (Au/Ge) stack, gold/zinc (Au/Zn) stack, nickel (Ni), palladium (Pd), platinum (Pt), zinc (Zn), germanium (Ge), titanium (Ti ), copper (Cu), chromium (Cr), etc.

The interface layer 15 not only intervenes between the first bonding layer 14 and the second bonding layer 17 to provide a bonding function, but also covers the side surface of the semiconductor system 12 to protect the system 12 from being damaged in subsequent processes. In addition, if the refractive index of the material of the interface layer 15 is between the semiconductor system 12 and the ambient medium, the light originating from the semiconductor system 12 will be less likely to encounter severe total reflection due to large changes in the refractive index.

In other embodiments, the electrical contact 18 can further penetrate into the first bonding layer 14 by increasing the length of the electrical contact 18 or compressing the interface layer 15 to reduce its thickness. As shown in FIG. 2A, the electrical contact 18 has penetrated the interface layer 15 and penetrated into the first bonding layer 14, but has not yet touched the reflector 13, and there is still an interface layer 15 between the first bonding layer 14 and the second bonding layer 17. . At this time, if both the electrical contact 18 and the first bonding layer 14 are made of appropriate materials, the two can form a metal bond or a eutectic bond.

As shown in FIG. 2B , the electrical contacts 18 have penetrated the interface layer 15 and penetrated into the first bonding layer 14, but have not yet touched the reflector 13, and the first bonding layer 14 and the second bonding layer 17 push the interface layer 15 while touching each other. At this time, if both the first bonding layer 14 and the second bonding layer 17 are made of appropriate materials, the two can form metal bonding or eutectic bonding; and if the electrical contacts 18 and the first bonding layer 14 are also made of appropriate materials, both of which can also form a metal bond or eutectic bond.

As shown in FIG. 2C , the electrical contact 18 has penetrated the interface layer 15 and penetrated into the first bonding layer 14 , and touches the conductive reflector 13 . On the other hand, the first bonding layer 14 and the second bonding layer 17 contact each other by pushing the interface layer 15 . At this time, if both the first bonding layer 14 and the second bonding layer 17 are made of appropriate materials, the two can form metal bonding or eutectic bonding; and if the electrical contacts 18 and the first bonding layer 14 are also made of appropriate materials, both of which can also form a metal bond or eutectic bond. In addition, in this embodiment, since the electrical contacts 18 have formed electrical contact with the reflector 13 , the first bonding layer 14 can be made of an insulating material suitable for gluing technology.

As another embodiment shown in FIG. 2D , the electrical contact 18 has penetrated the interface layer 15 and penetrated into the first bonding layer 14 , and touches the conductive reflector 13 . However, in this example, there is no direct contact between the first bonding layer 14 and the second bonding layer 17 due to the presence of the interface layer 15 . At this time, if both the electrical contact 18 and the first bonding layer 14 are made of appropriate materials, the two can form a metal bond or a eutectic bond. In addition, in this embodiment, since the electrical contacts 18 have formed electrical contact with the reflector 13 , the first bonding layer 14 can also use an insulating material suitable for gluing technology. Various modifications in FIGS. 2A-2D can be applied to various embodiments of the present invention after appropriate adjustments.

In addition, if the first bonding layer 14 in the above-mentioned embodiments is made of reflective materials, such as gold (Au) and silver (Ag), the reflector 13 is unnecessary in the device 10 . In this case, the reflective function and bonding function are provided by a single structure, such as the first bonding layer.

One of the considerations for configuring the electrical contact 18 is how to form a uniform current density in the semiconductor system 12 . Generally, current is injected into the semiconductor system 12 from the electrode 22, and flows out from the electrode 23 along the shortest electrical path. Therefore, the region of the semiconductor system 12 located below the electrode 22 usually has a higher current density, forming a so-called current Crowding (Current Crowding) effect. In other words, the area below the electrode 22 will generate more photons. However, these photons are usually absorbed, reflected, or scattered by the electrodes 22 and cannot be effectively utilized. Therefore, in the optoelectronic semiconductor device 10 shown in FIG. 3A , no electrical contact 18 is disposed under the electrode 22 and an insulating region 19A is formed. Due to the current blocking effect caused by the insulating region 19A, the current from the electrode 22 can avoid the area below the electrode 22 in the semiconductor system 12 and spread outwards before flowing into the electrical contact 18 . Therefore, more areas within the semiconductor system 12 are available for photoelectric conversion. The material of the insulating region 19A can be the same as or different from the interface layer 15, and its composition does not need to be all insulating materials, as long as its structure can prevent current from flowing through the insulating region 19A or form a resistance greater than that of the electrical contact 18. For example: make the height of the electrical contact 18 corresponding to the electrode 22 lower than that of other electrical contacts, or form an insulating layer between the electrical contact 18 corresponding to the electrode 22 and the upper conductive material.

Fig. 3B is a cross-sectional view of line AA in Fig. 3A. In this figure, in addition to the insulating region 19A, the electrical contacts 18 are arranged in an array in the interface layer 15, and the spacing between the electrical contacts 18 can be adjusted to be the same, different, or proportional to the series change, Random changes, variable periodic changes, fixed periodic changes, or quasi-periodicity changes. The location and shape of the insulating region 19A correspond to the location and shape of the electrode 22 , and its area may be smaller than, equal to, or larger than that of the electrode 22 . The shape of the electrical contact 18 is not limited to a rectangle, and may also be a circle, an ellipse, a triangle, a hexagon, an irregular shape, or a combination of the above shapes.

Moreover, in another embodiment of the present invention, as shown in FIG. 4A and FIG. 4B, the electrical contact 18' can also be in a continuous form, wherein FIG. 4B is a cross-sectional view of line BB in FIG. 4A. Under the same consideration as the previous embodiment, the insulating region 19A is formed at the position corresponding to the electrode 22 in the electrical contact 18'. In this embodiment, the area where the continuous electrical contacts 18 ′ contact the first bonding layer 14 is greater than the area where the distributed electrical contacts 18 ′ contact the first bonding layer 14 . There will be a lesser amount of interfacial layer 15 material between the contact 18 ′ and the first bonding layer 14 .

In FIGS. 3A-4B , although the insulating region 19A and the electrical contact 18 are formed on substantially the same level, the present invention is not limited thereto. Between the electrode 22 and the electrode 23 , or between the electrode 22 and the conductor 16 , any height corresponding to the position of the electrode 22 can form a structure capable of causing a current blocking effect.

In another embodiment of the present invention, an insulating region 19B is further formed between the reflector 13 and the semiconductor system 12 above the insulating region 19A for better current spreading performance. The insulating region 19B can be the same as or different from the interface layer 15, and its composition does not need to be all insulating materials, as long as its structure can block or reduce the current flowing through this region. In addition, the insulating region 19A does not need to exist together with the insulating region 19B in this example, that is, the electrical contact 18 can still exist under the insulating region 19B. Furthermore, the upper surface of the insulating region 19B is not limited to a flat, rough surface, or structured surface, and may also be a ridge-shaped surface as shown in FIG. 5 . If the ridge-shaped surface is reflective, the light from the semiconductor system 12 will be reflected outward by the ridge-shaped surface, and therefore, the probability of light being absorbed by the electrode 22 will be reduced.

Several other embodiments of the present invention are shown in FIGS. 6A-6C . The wavelength conversion material 21 is mixed in the interface layer 15 of the optoelectronic semiconductor device 10 shown in FIG. 6A . The wavelength converting material 21 can generate electromagnetic waves of another wavelength in response to the electromagnetic waves of one wavelength generated by the semiconductor system 12 , and its components are phosphors or dyes. Phosphor powder needs to have an appropriate particle diameter to achieve better luminous performance, and the preferred particle diameter is about 5 μm or less. For related patents, please refer to US Patent No. 6,245,259. If the semiconductor system 12 that can generate light in the blue wavelength range is combined with yttrium aluminum garnet (Yttriumaluminium garnet; YAG), terbium aluminum garnet (Terbium Aluminum Garnet; TAG), silicate (Silicate-based), or nitrogen oxide Phosphor powder such as (oxynitride) can make the optoelectronic semiconductor device 10 generate white light.

As shown in FIG. 6B , an upper interface layer 15A mixed with a wavelength conversion material 21 is formed on the semiconductor system 12 . For the material of the upper interface layer 15A, reference may be made to the materials used for the above interface layer 15 . As shown in FIG. 6C , both the interface layer 15 covering the periphery of the semiconductor system 12 and the upper interface layer 15A are mixed with wavelength conversion materials 21 , and the wavelength conversion materials 21 in the two layers can be the same or different. Furthermore, the upper interface layer 15A may have a specific pattern to define the distribution range of the wavelength conversion material. The empty area 153 as shown in the figure is a region with a material different from that of the upper interface layer 15A, which may be air, insulators, other types of phosphors, or such as indium tin oxide (indium tin oxide; ITO) and the like. transparent conductor. Conductors in the voids 153 that are connected to the electrodes 22 will help to spread the current evenly to the semiconductor system 22 .

As shown in FIG. 7 , the upper interface layer 15A of the optoelectronic semiconductor device 10 at least includes a passive light-emitting layer 151 and a connection layer 152 . The passive light-emitting layer 151 is, for example, a bulk phosphor, a III-V semiconductor layer, and a II-VI semiconductor layer. The material of the connection layer 152 at least includes organic materials such as polyimide (PI), benzocyclobutene, perfluorocyclobutene (PFCB), and epoxy resin (Epoxy). The passive light-emitting layer 151 can generate output light due to the input light of the semiconductor system 12 , and the input light and the output light have different wavelengths or spectra.

In another embodiment of the present invention, as shown in FIG. 8 , the optoelectronic semiconductor device 10 includes a lower reflector 13A and an upper reflector 13B. The materials of the two reflectors can refer to the material of the above reflector 13 respectively. The light generated by the semiconductor system 12 can be reflected by the two reflectors and directed toward the interface layer 15 . In addition, if the light emitted from the optoelectronic semiconductor device 10 is reflected by other external objects toward the upper surface of the semiconductor system 12 , it may be reflected outward by the upper reflector 13B.

A further exemplary embodiment of an optoelectronic semiconductor device 10 as shown in FIG. 9 has a structured or roughened outer surface. The structured or rough outer surface has the function of destroying the total reflection of light at the interface between the structure and the environment medium, thereby increasing the light extraction efficiency of the optoelectronic semiconductor device 10 . A structured or roughened outer surface may be formed on the outer surface of semiconductor system 12, interface layer 15, or both. The roughness of the rough surface should preferably be such that the light extraction efficiency can be improved. The structured surface can be a regular or irregular protrusion and depression structure or a photonic crystal (Photonic Crystal) structure.

Yet another embodiment of the present invention is shown in FIG. 10 . The semiconductor system 12 in the optoelectronic semiconductor device 10 of this example is electrically connected to the conductor 16 through the first interposer 20A, the electrical contacts 18 , and the second interposer 20B. During the manufacturing process, the electrical contacts 18 may cover the second interposer 20B in advance and then be connected to the semiconductor system 12 formed with the first interposer 20A. The first interposer 20A and the second interposer 20B will contact each other by pressing the interface layer 15 . The material forming the interface layer 15 may remain in the trenches between the electrical contacts 18 . The first interposer 20A and the second interposer 20B not only form an ohmic contact but also form a stable physical contact. The materials of the two intermediate layers are respectively titanium (Ti) or chromium (Cr).

An embodiment of the present invention is shown in FIG. 11 . The electrical contact 24 in the optoelectronic semiconductor device 10 of this example is an irregular structure such as a rough surface. The materials of the first interposer 20A and the second interposer 20B are as mentioned above. In this example, the second interposer 20B covers the electrical contact 24 without completely planarizing it. At least a portion of the second interposer 20B protrudes through the interface layer 15 to contact the first interposer 20A. The material constituting the interface layer 15 may remain in the depressions between the rough electrical contacts 24 to help the connection between the first interposer 20A and the second interposer 20B.

Although the present invention has been described above, it is not intended to limit the scope, implementation sequence, or used materials and process methods of the present invention. Various modifications and changes made to the present invention do not depart from the spirit and scope of the present invention.

Claims (20)

1. An optoelectronic semiconductor device comprising: A semiconductor system capable of converting light energy to electrical energy; an interfacial layer formed on at least two surfaces of the semiconductor system; an electrical conductor carrying the semiconductor system; and An electrical contact passes through the interface layer and electrically connects the semiconductor system and the conductor. 2. The optoelectronic semiconductor device as claimed in claim 1, wherein the optoelectronic semiconductor system comprises a light emitting diode. 3. The optoelectronic semiconductor device according to claim 1, wherein the interface layer is formed between the semiconductor system and the electrical conductor. 4. The optoelectronic semiconductor device as claimed in claim 1, wherein the interface layer covers at least one side surface of the semiconductor system. 5. The optoelectronic semiconductor device of claim 1, wherein the interface layer has a refractive index between the semiconductor system and an ambient medium. 6. The optoelectronic semiconductor device of claim 1, further comprising: A reflector is located between the semiconductor system and the conductor, and can reflect light from the semiconductor system. 7. The optoelectronic semiconductor device of claim 1, further comprising: A first bonding layer and a second bonding layer are respectively located on opposite sides of the electrical contact, and are electrically connected to each other. 8. The optoelectronic semiconductor device of claim 1, further comprising: A first bonding layer is electrically connected with the semiconductor system, and at least part of the electrical contact penetrates through the first bonding layer. 9. The optoelectronic semiconductor device of claim 1, further comprising: A first bonding layer is electrically connected with the semiconductor system and reflects light from the semiconductor system. 10. The optoelectronic semiconductor device of claim 1, further comprising: a first bonding layer electrically connected to the semiconductor system; and A reflector is located between the first bonding layer and the semiconductor system, and reflects light from the semiconductor system. 11. The optoelectronic semiconductor device of claim 1, further comprising: A reflector is located between the electrical contact and the semiconductor system, and the electrical contact is in contact with the reflector. 12. The optoelectronic semiconductor device as claimed in claim 1, wherein the spacing variation rule between the electrical contacts is selected from the group consisting of fixed periodicity, variable periodicity, quasi-periodicity, proportional series, and irregularity . 13. The optoelectronic semiconductor device as claimed in claim 1, wherein the shape of the electrical contact is selected from the group consisting of rectangle, circle, ellipse, triangle, hexagon, irregular shape, and combinations thereof. 14. The optoelectronic semiconductor device of claim 1, wherein the electrical contact comprises a rough surface. 15. The optoelectronic semiconductor device of claim 1, further comprising: a first interposer electrically connected to the semiconductor system; and A second intermediary layer is formed on the electrical contact and between the first intermediary layer and the electrical contact. 16. The optoelectronic semiconductor device of claim 1, further comprising: an electrode formed over the semiconductor system; and An insulating area corresponds to the position of the electrode and is generally located on the same level as the electrical contact. 17. The optoelectronic semiconductor device of claim 1, further comprising: an electrode formed over the semiconductor system; and An insulating area corresponds to the position of the electrode and is located at a different level from the electrical contact. 18. The optoelectronic semiconductor device of claim 1, wherein the interface layer comprises a wavelength conversion material. 19. The optoelectronic semiconductor device of claim 1, further comprising: A passive light-emitting layer formed on a surface of the semiconductor system opposite to the electrical contact, wherein the passive light-emitting layer can emit an output light in response to an input light from the semiconductor system, and the output light and The input light has different wavelengths. 20. The optoelectronic semiconductor device of claim 1, further comprising: A light extraction surface formed on a main light output surface of the optoelectronic semiconductor device, the light extraction surface is selected from rough surfaces, regular protrusion and depression structures, irregular protrusion and depression structures, and photonic crystals formed group.

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