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CN101552282A - Phase-change memory device and method of fabricating the same - Google Patents

Phase-change memory device and method of fabricating the same Download PDF

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Publication number
CN101552282A
CN101552282A CNA2009101326036A CN200910132603A CN101552282A CN 101552282 A CN101552282 A CN 101552282A CN A2009101326036 A CNA2009101326036 A CN A2009101326036A CN 200910132603 A CN200910132603 A CN 200910132603A CN 101552282 A CN101552282 A CN 101552282A
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phase
heating
zone
type
change memory
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CN101552282B (en
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郑镇基
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SK Hynix Inc
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Hynix Semiconductor Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/841—Electrodes
    • H10N70/8413—Electrodes adapted for resistive heating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8825—Selenides, e.g. GeSe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

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  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Memories (AREA)

Abstract

A phase-change memory device includes a lower electrode; and at least two phase-change memory cells sharing the lower electrode. Another phase-change memory device includes a heating layer having a smaller contact area with a phase-change material layer and a greater contact area with a PN diode structure.

Description

Phase change memory device and manufacture method thereof
Related application
The application requires the priority of the korean patent application No.10-2008-0031473 of submission on April 4th, 2008, and its full text mode by reference is incorporated herein.
Technical field
Content of the present invention relates to nonvolatile semiconductor memory member, and more specific phase transformation nonvolatile semiconductor memory member and the manufacture method thereof of using phase-change material that relate to.
Background technology
Recently, phase-change random access storage (PRAM) device has been proposed as non-volatile memory semiconductor device.The unit storage unit of phase change memory device uses phase-change material as data storage media.Phase-change material has two kinds of stable phases (for example, amorphous phase and crystalline phase) according to the heat that is supplied to it.Known phase-change material has Ge-Sb-Te (GST) compound, and it is the mixture of germanium (Ge), antimony (Sb) and tellurium (Te).
If under near the temperature of the melt temperature (Tm) of phase-change material phase-change material is heated short time and then cooling fast, then phase-change material fades to amorphous phase from crystalline phase.In contrast, if be lower than under the crystallization temperature of melt temperature the phase-change material heating long-time, then slowly cooling, then phase-change material from amorphous phase-change to crystalline phase.Phase-change material under amorphous phase than under crystalline phase, having higher resistivity.Therefore, being stored in data in the phase-change memory cell is that logic " 1 " or logic " 0 " can be judged by the flow through electric current of phase-change material of detection.
Supply heat is to realize the phase transformation in the phase-change material.For example, electric current is supplied to the electrode that is connected with phase-change material, makes to produce heat and heat is supplied to phase-change material by electroplax.Change with institute's supply of current by the temperature that heat caused that is supplied to phase-change material.
Therefore, one of greatest factor is to the enough electric currents of electrode supply that are connected with phase-change material in the exploitation of high integrated phase change memory device, i.e. operating current (for example, program (writing) electric current or wipe electric current).For this purpose, a kind of method has been proposed to use the switch element of PN diode as phase change memory device.Compare with metal-oxide semiconductor (MOS) (MOS) transistor or bipolar transistor, the PN diode allows the higher integrated ratio of phase change memory device and increases operating current.
Figure 1A is the schematic plan view of the known phase change memory device of use PN diode.Figure 1B is the cross-sectional view along the phase change memory device of the line X-X ' intercepting of Figure 1A.
Referring to Figure 1A and Figure 1B, known phase change memory device comprises: the substrate 11 with device isolation regions (not indicating) and active area 12; On the active area 12 of substrate 11, has the lower electrode 13 of the PN diode structure of the lamination that comprises N type silicon layer 13A and P type silicon layer 13B; Cover lower electrode 13 and bury the insulating barrier 14 of zone of heating 15; Be arranged on the insulating barrier 14 phase-change material layers 16 with Contact Heating layer 15; And be arranged in upper electrode 17 on the phase-change material layers 16.Zone of heating 15 is the plug shape, and forms the hemispheric program area 18 that contacts with zone of heating 15 in phase-change material layers 16.
For the high integration and the low power consumption of phase change memory device, wish to reduce the size of phase change memory device.But, need sufficiently high operating current, because should produce elevated temperature heat to change the phase of phase-change material layers 16.Therefore, there is restriction at size (that is the size of PN the diode) aspect of the lower electrode 13 that reduces the control operation electric current.
Therefore, thus a kind of method has been proposed to reduce the operating current that contact area between zone of heating 15 and the phase-change material layers 16 reduces to have the phase change memory device of said structure by the size that reduces zone of heating 15.The method even can produce elevated temperature heat under the situation that operating current reduces is because the resistance of zone of heating 15 increases along with the reducing of contact area between phase-change material layers 16 and the zone of heating 15.
Yet known method uses expensive fine patterning technology (for example, using the photoetching process of ArF exposure source) to form zone of heating 15.This increases the manufacturing cost of phase change memory device.In addition, the fine patterning technology has the restriction of the integrated ratio that is difficult to increase phase change memory device.
Summary of the invention
According to one or more embodiments, a kind of phase change memory device comprises: lower electrode; At least two phase-change memory cells with shared this lower electrode.
According to one or more embodiments, a kind of method of making phase change memory device comprises: form the lower electrode that comprises the PN diode structure, this PN diode structure comprises the knot of N type conductive layer and P-type conduction layer; Form a plurality of heating elements on superposed one in P-type conduction layer and N type conductive layer; Optionally be etched in superposed in P-type conduction layer between the heating element and the N type conductive layer; On each heating element, form the phase-change material layers that separates; And the upper electrode that on each phase-change material layers, forms separation.
According to one or more embodiments, a kind of method of making phase change memory device comprises: form the lower electrode that comprises the PN diode structure on the active area of substrate; On the PN diode structure, form zone of heating; On zone of heating, form phase-change material layers; And on phase-change material layers, form upper electrode; Wherein the contact area between phase-change material layers and the zone of heating forms less than the contact area between zone of heating and the PN diode structure.
According to one or more embodiments, a kind of phase change memory device comprises: substrate has active area on it; The lower electrode that comprises the PN diode structure on the substrate active area; Zone of heating on the PN diode structure; Phase-change material layers on zone of heating; And the upper electrode on phase-change material layers; Wherein the contact area between phase-change material layers and the zone of heating is less than the contact area between zone of heating and the PN diode structure.
Description of drawings
Various embodiments of accompanying drawings by way of example and without limitation, wherein identical Reference numeral is represented identical component.
Figure 1A is the schematic plan view of the known phase change memory device of use PN diode.
Figure 1B is the cross-sectional view along the phase change memory device of the line X-X ' intercepting of Figure 1A.
Fig. 2 A is the schematic plan view according to the phase change memory device of first embodiment.
Fig. 2 B is the cross-sectional view along the phase change memory of the line X-X ' intercepting of Fig. 2 A.
Fig. 3 A to Fig. 3 C is the schematic diagram of explanation manufacturing according to the method for the phase change memory device of first embodiment.
Fig. 4 A is the schematic plan view according to the phase change memory device of second embodiment.
Fig. 4 B is the cross-sectional view along the phase change memory device of the line A-A ' intercepting of Fig. 4 A.
Fig. 4 C is the cross-sectional view along the phase change memory device of the line B-B ' intercepting of Fig. 4 A.
Fig. 5 A to Fig. 5 C is for the expression phase-change material layers of known phase change memory device and the contact area between the zone of heating, according to the phase-change material layers of the phase change memory device of first embodiment and the contact area between the zone of heating and according to the phase-change material layers of the phase change memory device of second embodiment and the schematic plan view of the comparison between the contact area between the zone of heating.
Fig. 6 A is the schematic plan view according to the phase change memory device of the 3rd embodiment.
Fig. 6 B is the cross-sectional view along the phase change memory device of the line X-X ' intercepting of Fig. 6 A
Fig. 7 A to Fig. 7 H is the schematic diagram of explanation manufacturing according to the method for the phase change memory device of the 3rd embodiment.
Fig. 8 A is the schematic plan view according to the phase change memory device of the 4th embodiment.
Fig. 8 B is the cross-sectional view along the phase change memory device of the line A-A ' intercepting of Fig. 8 A.
Fig. 8 C is the cross-sectional view along the phase change memory device of the line B-B ' intercepting of Fig. 8 A.
Fig. 9 is the perspective view that is used to describe according to the operating principle of the phase change memory device of the 3rd embodiment and the 4th embodiment.
Embodiment
In the accompanying drawings, for the purpose of explanation clear, the size in layer and zone is amplified.Should also be understood that when layer (or film) is called to be positioned at another layer or substrate when " going up ", this layer (or film) can be located immediately on described another layer or the substrate, or also can have intervening layer.In addition, should be understood that when layer is called to be positioned at another layer when " descend " that this layer can be located immediately at described another layer time, or also can have one or more intervening layers.In addition, should also be understood that when layer is called two layers " between " time, this layer can be the sole layer between described two layers, maybe can have one or more intervening layers.
Fig. 2 A is the schematic plan view according to the phase change memory device of first embodiment.Fig. 2 B is the cross-sectional view along the phase change memory of the line X-X ' intercepting of Fig. 2 A.
Referring to Fig. 2 A and Fig. 2 B, comprise: substrate 21 with device isolation regions (indicating) and active area 22 according to the phase change memory device of first embodiment; Cover first insulating barrier 24 of substrate 21; Be arranged on the active area 22 of substrate 21 and in first insulating barrier 24 and have a lower electrode 23 of PN diode structure; Be arranged in the zone of heating 25 on the lower electrode 23 in first insulating barrier 24; Imbed second insulating barrier 28 in the zone of heating 25; Be arranged as the phase-change material layers 26 that covers zone of heating 25; And be arranged in upper electrode 27 on the phase-change material layers 26.At this, Reference numeral 29 expressions are arranged in the program area in the phase-change material layers 26.
Substrate 21 can be silicon (Si) substrate.
Active area 22 can form excellent type or line style.For example, active area 22 can be the impurity layer that forms by with the doping impurity silicon substrate.In some embodiments, active layer 22 is formed by the N type impurity layer of the N type doping impurity of utilization such as phosphorus (P) or arsenic (As).This is in order to reduce lower electrode 23 (that is, the PN diode) and as the potential barrier between the active area 22 one of in word line and the bit line, thereby increases the conductivity between lower electrode 23 and the active area 22.At this, will be called device isolation regions in all the other zones of the substrate outside the active area 22 21.
Lower electrode 23 has the PN diode structure, and it comprises N type conductive layer 23A and the knot that is arranged in the P-type conduction layer 23B on the N type conductive layer 23A on the active area 22 that is arranged in substrate 21.N type conductive layer 23A and P-type conduction layer 23B can be silicon layer, and this silicon layer can comprise polysilicon (layer of polycrystalline-Si) and/or silicon epitaxial layers.For example, N type conductive layer 23A can be the N type silicon layer with N type doping impurity, and P-type conduction layer 23B can be with p type impurity doped P-type silicon layer.N type impurity can be phosphorus (P) or arsenic (As), and p type impurity can be boron (B).
In some embodiments, the mode that is lower than the doping impurity concentration of P-type conduction layer 23B with the doping impurity concentration of N type conductive layer 23A forms lower electrode 23.Its reason is, if the doping impurity concentration of N type conductive layer 23A is higher than the doping impurity concentration of P-type conduction layer 23B, and the potential barrier step-down between N type conductive layer 23A and the P-type conduction layer 23B then.If the potential barrier between N type conductive layer 23A and the P-type conduction layer 23B is low, the threshold voltage step-down of PN diode then, and can by the high voltage of word line (that is active area) data be write in undesirable phase-change memory cell down at ready mode (stand-by mode) thus.Can avoid or reduce this problem at least by the threshold voltage that increases the PN diode, the mode that is lower than the doping impurity concentration of P-type conduction layer 23B by the doping impurity concentration with N type conductive layer 23A forms the threshold voltage that lower electrode 23 increases the PN diode.
Zone of heating 25 and upper electrode 27 can be formed by metal material or metallic compound material.Metal material can be titanium (Ti), tungsten (W), copper (Cu) or aluminium (Al).The metallic compound material can be titanium nitride (TiN), tungsten nitride (WN), TiAlN (TiAlN) or titanium tungsten (TiW).
And, can control contact area between phase-change material layers 26 and the zone of heating 25 according to the deposit thickness of zone of heating 25.Therefore, can control the operating current of phase change memory device according to the deposit thickness of zone of heating 25.As a reference, a kind of known method is by controlling the size of plug type zone of heating 15 via patterned etch technology, thereby makes and be difficult to reduce contact area between phase-change material layers 16 and the plug type zone of heating 15.Yet, can (not pass through by the deposit thickness of control zone of heating 25 according to first embodiment via patterned etch technology, but by grown/deposited technology) control the contact area between phase-change material layers 26 and the zone of heating 25, thus the feasible contact area that can more easily control between phase-change material layers 26 and the zone of heating 25.
Phase-change material layers 26 can be formed by chalcogen compound.The chalcogen compound that is used for phase-change material layers 26 comprises at least a of following material: germanium-antimony-tellurium (Ge-Sb-Te), arsenic-antimony-tellurium (As-Sb-Te), strontium-antimony-tellurium (Sn-Sb-Te), strontium-indium-antimony-tellurium (Sn-In-Sb-Te), arsenic-germanium-antimony-tellurium (As-Ge-Sb-Te), 5A family element (comprises tantalum (Ta), niobium (Nb) and vanadium (V))-antimony-tellurium (5A family element-Sb-Te), 6A family element (comprises tungsten (W), molybdenum (Mo) and chromium (Cr))-antimony-tellurium (6A family element-Sb-Te), 5A family element-antimony-selenium (5A family element-Sb-Se) and 6A family element-antimony-selenium (6A family element-Sb-Se).In some embodiments, phase-change material layers 26 is formed by Ge-Sb-Te (GST) compound.
First insulating barrier 24 and second insulating barrier 28 can by be selected from oxide skin(coating), nitride layer, oxynitride layer with and stacked structure (lamination) at least a formation.Oxide skin(coating) can comprise silica (SiO 2), boron phosphorus silicate glass (BPSG), phosphosilicate glass (PSG), tetraethyl orthosilicate (TEOS), unadulterated silicate glass (USG), spin-coating glass (SOG), high-density plasma (HDP) or spin coating dielectric medium (SOD).Nitride layer can comprise silicon nitride (Si 3N 4).Oxynitride layer can comprise silicon oxynitride (SiON).
In the structure that in Fig. 2 B, specifies, zone of heating 25 forms cup-shaped in according to the phase change memory device of first embodiment, thereby make to reduce contact area between phase-change material layers 26 and the zone of heating 25 circular in configuration in the structure of contact area shown in specifically.Therefore, can significantly reduce the size of program area 29, thereby make and to reduce the heat that must be supplied to program area 29.It should be noted that and do not get rid of other configuration.For example, the contact area between zone of heating 25 and the phase-change material layers 26 may not be annular, or zone of heating 25 may not be cup-shaped; On the contrary, zone of heating can be cylindrical shape or tubulose.
And, as hereinafter will describing, can control contact area between phase-change material layers 26 and the zone of heating 25 by the deposit thickness of control zone of heating 25.Therefore,, also can reduce the contact area between zone of heating 25 and the phase-change material layers 26, the feasible thus manufacturing cost that can reduce phase change memory device even use expensive fine patterning technology.
Fig. 3 A to Fig. 3 C is the schematic diagram of explanation manufacturing according to the method for the phase change memory device of first embodiment.
Referring to Fig. 3 A, foreign ion is injected in the substrate 21 to be formed with source region 22.Impurity can be p type impurity or N type impurity.P type impurity can be boron (B), and N type impurity can be arsenic (As) or phosphorus (P).In some embodiments, use N type impurity to implement ion implantation technology.This is for the potential barrier between the lower electrode 23 (that is, the PN diode) that reduces active area 22 and treat to form via subsequent technique, thereby increases the conductivity between active area 22 and the lower electrode 23.
The groove (not shown) of the presumptive area of etch substrate 21 to be formed for device isolation, and with the insulating barrier filling groove to form device isolation regions (not shown).Groove can form line style or excellent type, but does not get rid of other configuration.With all the other area limitings except that device isolation regions of substrate 21 is active area 22, and because the line style or the excellent type of device isolation regions cause active area 22 to have line style or excellent type.
On the active area 22 of substrate 21, form lower electrode 23 with PN diode structure.Lower electrode 23 with PN diode structure can form by stacking gradually N type conductive layer 23A on the active area 22 of substrate 21 and the stacked structure of P-type conduction layer 23B.In some embodiments, the mode that is lower than the doping impurity concentration of P-type conduction layer 23B with the doping impurity concentration of N type conductive layer 23A forms lower electrode 23.Its reason is, if the doping impurity concentration of N type conductive layer 23A is lower than the doping impurity concentration of P-type conduction layer 23B, then the potential barrier between N type conductive layer 23A and the P-type conduction layer 23B can increase, thereby increases the threshold voltage of PN diode.As a reference, the high threshold voltage of PN diode can prevent the fault that the noise of PN diode causes.
N type conductive layer 23A and and P-type conduction layer 23B can form by silicon layer, this silicon layer can comprise polysilicon layer or silicon epitaxial layers.For example, N type conductive layer 23A can be formed by the N type silicon layer with N type doping impurity, and P-type conduction layer 23B can be by forming with p type impurity doped P-type silicon layer.
For example, can be by original position ion injection p type impurity during forming polysilicon layer or by forming P type silicon layer at formation polysilicon layer ion injection afterwards p type impurity via chemical vapor deposition (CVD) technology or physical vapor deposition (PVD) technology.And, can be by original position ion injection p type impurity during forming silicon epitaxial layers or by forming P type silicon layer at formation silicon epitaxial layers ion injection afterwards p type impurity via epitaxial growth technology.And, can be by p type impurity contra-doping (counter-doping) be formed P type silicon layer to N type silicon layer.
On the resulting structures that comprises lower electrode 23, form first insulating barrier 24.First insulating barrier 24 can be by at least a formation that is selected from oxide skin(coating), nitride layer, oxynitride layer and the stacked structure thereof.
On first insulating barrier 24, form photoresist pattern (not shown).Make with photoresist that pattern stops as etching, etching first insulating barrier 24 is to form the open area 30 at the top that exposes P-type conduction layer 23B.
Open area 30 will be for wherein will form the zone of zone of heating via subsequent technique.Under the situation of known plug type zone of heating 15, the open area must form has little width to reduce the contact area between phase-change material layers 16 and the zone of heating 15.Therefore, known method must form the open area by expensive fine patterning technology (for example, using the photoengraving carving technology of ArF exposure source), thereby increases the manufacturing cost of phase change memory device.Yet, as hereinafter will describing, even need not open area 30 formed and have little width and also can reduce contact area between phase-change material layers 26 and the zone of heating 25.Therefore, can form open area 30 by the etch process that uses not expensive patterning techniques, thereby make the manufacturing cost that can reduce phase change memory device.
Referring to Fig. 3 B, (for example, passing through depositing operation) comprising the conductive layer that is formed for zone of heating on first insulating barrier 24 of open area 30.The conductive layer that is used for zone of heating can be formed by metal material or metallic compound material.Metal material can be titanium (Ti), tungsten (W), copper (Cu) or aluminium (Al).The metallic compound material can be titanium nitride (TiN), tungsten nitride (WN), TiAlN (TiAlN) or titanium tungsten (TiW).Can control according to the deposit thickness of the conductive layer that is used for zone of heating and treat via the zone of heating 25 of subsequent technique formation and the contact area between the phase-change material layers 26.
After the formation (for example, deposition) of the conductive layer that is used for zone of heating is finished, form second insulating barrier 28 with the remaining space in the filling opening zone 30.Second insulating barrier 28 can be by at least a formation that is selected from oxide skin(coating), nitride layer, oxynitride layer and the stacked structure thereof.
The conductive layer planarization that makes second insulating barrier 28 and be used for zone of heating forms zone of heating 25 thus to expose the top of first insulating barrier 24.Can use chemico-mechanical polishing (CMP) technology or etch-back technics to implement planarization process.
Referring to Fig. 3 C, on first insulating barrier 24 and second insulating barrier 28, form phase-change material layers 26 and upper electrode 27 to cover zone of heating 25.Upper electrode 27 can be by forming with zone of heating 25 identical materials.That is, upper electrode 27 can be formed by metal material or metallic compound material.Phase-change material layers 26 can use that (Ge-Sb-Te, GST) chalcogen compound of compound forms such as germanium-antimony-tellurium.
Though not shown in the accompanying drawing, in some embodiments, on first insulating barrier 24, form passivation layer to cover upper electrode 27, the presumptive area of opening passivation layer is finished the manufacturing of phase change memory device thus to form interconnection contact hole and interconnection.
In the above description, zone of heating 25 forms cup-shapedly in according to the phase change memory device of first embodiment, even make thus and may use expensive fine patterning technology, also reduces the contact area between phase-change material layers 26 and the zone of heating 25.Therefore, can reduce the manufacturing cost of phase change memory device.
Hereinafter, with providing according to the phase change memory device of second embodiment and the description of manufacture method thereof, compare with first embodiment, second embodiment can further reduce the contact area between phase-change material layers and the zone of heating.For the sake of simplicity, with omitting the detailed description of the common trait between second embodiment and first embodiment, below describe on the difference that will concentrate between first embodiment and second embodiment.
Fig. 4 A is the schematic plan view according to the phase change memory device of second embodiment.Fig. 4 B is the cross-sectional view along the phase change memory device of the line A-A ' intercepting of Fig. 4 A.Fig. 4 C is the cross-sectional view of the phase change memory device cut-got along the line B-B ' of Fig. 4 A.
Referring to Fig. 4 A to Fig. 4 C, comprise according to the phase change memory device of second embodiment: have device isolation regions (indicating) and active area 32 substrate 31, cover substrate 31 first insulating barrier 34, be arranged on the active area 32 of substrate 31 and in first insulating barrier 34 and have the PN diode structure lower electrode 33, be arranged in zone of heating 35 on the lower electrode 33 in first insulating barrier 34, be arranged as covering zone of heating 35 a part phase-change material layers 36 and be arranged in upper electrode 37 on the phase-change material layers 36.Zone of heating 35 can form glass type 35A or plug type 35B.If zone of heating 35 forms a glass type 35A, then phase change memory device can further comprise second insulating barrier of imbedding among the zone of heating 35A 38.Reference numeral 39 expressions are arranged in the program area in the phase-change material layers 36.
In the above description, in phase change memory device according to second embodiment, arrange that phase-change material layers 36 is with the part at the top of the exposure of Contact Heating layer 35 only, the feasible thus contact area that can further reduce between zone of heating 35 and the phase-change material layers 36 will be as below describing with reference to figure 5A to Fig. 5 C.
Fig. 5 A to Fig. 5 C is for the phase-change material layers of showing known phase change memory device (referring to Fig. 5 A) and the contact area between the zone of heating, according to the phase-change material layers of the phase change memory device (referring to Fig. 5 B) of first embodiment and the contact area between the zone of heating and according to the phase-change material layers of the phase change memory device (referring to Fig. 5 C) of second embodiment and the schematic plan view of the comparison between the contact area between the zone of heating.
Referring to Fig. 5 A to Fig. 5 C, as seen, according to the contact area A2 between the phase-change material layers 26 of first embodiment and the cup type zone of heating 25 less than the (A1＞A2) of the contact area A1 between phase-change material layers 16 and the known plug type zone of heating 15.
Also can find out, according to the phase-change material layers 36 of second embodiment and the contact area A3 between the plug type zone of heating 35B less than the (A1＞A3) of the contact area A1 between phase-change material layers 16 and the known plug type zone of heating 15.It can also be seen that, according to the contact area A4 between the phase-change material layers 36 of second embodiment and the cup type zone of heating 35A significantly less than the (A1＞A4) of the contact area A1 between phase-change material layers 16 and the known plug type zone of heating 15.
Also can find out, according to the contact area A4 between the phase-change material layers 36 of second embodiment and the cup type zone of heating 35A less than according to (the A2＞A4) of the contact area A2 between the phase-change material layers 26 of first embodiment and glass type zone of heating 25.
In the above description, in phase change memory device according to second embodiment, phase-change material layers 36 be arranged as the exposure that only covers zone of heating 35 the top a part but not all, make thus and compare the contact area that can further reduce between zone of heating 35 and the phase-change material layers 36 with first embodiment.Therefore, can further reduce the operating current of phase change memory device.
Can be easily derive the method for making according to the phase change memory device of second embodiment according to the method for the phase change memory device of first embodiment by the manufacturing of having described with reference to figure 3A to Fig. 3 C, therefore, for simplicity's sake, the detailed description of back one method will be omitted.
Hereinafter, to provide according to the phase change memory device of the 3rd embodiment and the 4th embodiment and the description of manufacture method thereof, described embodiment can reduce the contact area between zone of heating and the phase-change material layers, making thus to provide the phase change memory device of high integration, reduces the operating current of device simultaneously.For this purpose, dispose according to the phase change memory device of the 3rd embodiment and the 4th embodiment mode with two shared lower electrodes of phase-change memory cell.Lower electrode comprises the PN diode, and each phase-change memory cell comprises zone of heating, phase-change material layers and upper electrode.For the purpose of facility,, below describe on the difference that will concentrate between the embodiment omitting the detailed description of the common trait between the 3rd/the 4th embodiment and the first/the second embodiment.
Fig. 6 A is the schematic plan view according to the phase change memory device of the 3rd embodiment.Fig. 6 B is the cross-sectional view along the phase change memory device of the line X-X ' intercepting of Fig. 6 A.
Referring to Fig. 6 A and Fig. 6 B, comprise according to the phase change memory device of the 3rd embodiment: have substrate 41, the covering substrate 41 of device isolation regions (indicating) and active area 42 first insulating barrier 44, be arranged on the active area 42 and have common area and the lower electrode 43 of two area of isolation and be arranged in two phase-change memory cells 53 on one of the area of isolation of lower electrode 43 separately.Each phase-change memory cell 53 comprises: be arranged in zone of heating 45 on the corresponding area of isolation of lower electrode 43, be arranged as the phase-change material layers 46 that covers zone of heating 45 and be arranged in upper electrode 47 on the phase-change material layers 46.Phase change memory device also can comprise the area of isolation that is embedded in lower electrode 43 and second insulating barrier 48 between the zone of heating 45.Reference numeral 49 expressions are arranged in the program area in the phase-change material layers 46.
Common area in the lower electrode 43 is formed by N type conductive layer 43A, and the area of isolation in the lower electrode 43 is formed by the knot of N type conductive layer 43A and P-type conduction zone 43B.Promptly, lower electrode 43 comprises a plurality of (at least two) PN diode, in the PN diode each has N type conductive layer 43A in corresponding area of isolation and the knot of P-type conduction layer 43B, and a plurality of (at least two) phase-change memory cell 53 shared N type conductive layer 43A.P-type conduction layer 43B is electrically connected with respective phase change memory cell 53.
Zone of heating 45 can have stopper or cup-shaped.Yet, do not get rid of other configuration.
In the above description, in phase change memory device according to the 3rd embodiment, two phase-change memory cell 53 shared lower electrodes 43, thereby the feasible integrated ratio that can significantly increase phase change memory device.That is, compare with second embodiment with first embodiment, the 3rd embodiment can make the integrated ratio of phase change memory device increase to twice or more than the twice.
And, the 3rd embodiment can increase the integrated ratio of phase change memory device, also can reduce the contact area between phase-change material layers 46 and the zone of heating 45, make the action required electric current can reduce phase change memory device thus, such as will with reference to figure 7A to Fig. 7 H manufacturing in according to the following description of the method for the phase change memory device of the 3rd embodiment argumentation.
Fig. 7 A to Fig. 7 H is the schematic diagram of explanation manufacturing according to the method for the phase change memory device of the 3rd embodiment.Fig. 7 A, Fig. 7 C, Fig. 7 E and Fig. 7 G are schematic plan view, and Fig. 7 B, Fig. 7 D, Fig. 7 F and Fig. 7 H are respectively along the cross-sectional view of the line X-X ' intercepting of plane graph.
Referring to Fig. 7 A and Fig. 7 B, foreign ion is injected in the substrate 41 to be formed with source region 42.Impurity can be p type impurity or N type impurity.P type impurity can be boron (B), and N type impurity can be arsenic (As) or phosphorus (P).In some embodiments, use N type impurity to implement ion implantation technology.This is for the potential barrier between the lower electrode 43 that reduces active area 42 and treat to form via subsequent technique, thereby increases the conductivity between active area 42 and the lower electrode 43.
The groove (not shown) of the presumptive area of etch substrate 41 to be formed for device isolation, and with the insulating barrier filling groove to form device isolation regions (not shown).Groove can form line style or excellent type, but does not get rid of other configuration.To be active area 42 at all the other area limitings except that device isolation regions of substrate 41, because the line style or the excellent type of device isolation regions cause active area 42 to have line style or excellent type.
On active area 42, form lower electrode 43 with PN diode structure.The PN diode structure can be formed by stacking gradually N type conductive layer 43A on the active area 42 of substrate 41 and the stacked structure of P-type conduction layer 43B.In some embodiments, the mode that is lower than the doping impurity concentration of P-type conduction layer 43B with the doping impurity concentration of N type conductive layer 43A forms lower electrode 43.Its reason is that if the doping impurity concentration of N type conductive layer 43A is lower than the doping impurity concentration of P-type conduction layer 43B, then the threshold voltage of PN diode can increase.As a reference, the high threshold voltage of PN diode can prevent the fault that the noise of PN diode causes.
N type conductive layer 43A and P-type conduction layer 43B can be formed by silicon layer, and this silicon layer can comprise polysilicon layer or silicon epitaxial layers.For example, N type conductive layer 43A can be formed by the N type silicon layer with N type doping impurity, and P-type conduction layer 43B can be by forming with p type impurity doped P-type silicon layer.
For example, can be by original position ion injection p type impurity during forming polysilicon layer or by forming P type silicon layer at formation polysilicon layer ion injection afterwards p type impurity via chemical vapor deposition (CVD) technology or physical vapor deposition (PVD) technology.And, can be by original position ion injection p type impurity during forming silicon epitaxial layers or by forming P type silicon layer at formation silicon epitaxial layers ion injection afterwards p type impurity via epitaxial growth technology.In addition, can be by the p type impurity contra-doping be formed P type silicon layer to N type silicon layer.
On the resulting structures that comprises lower electrode 43, form first insulating barrier 44.First insulating barrier 44 can be by at least a formation that is selected from oxide skin(coating), nitride layer, oxynitride layer and the stacked structure thereof.
On first insulating barrier 44, form photoresist pattern (not shown).Pattern stops as etching or shields by making with photoresist, and etching first insulating barrier 44 is to form the open area 50 at the top that exposes P-type conduction layer 43B.
Open area 50 will be for wherein will form the zone of zone of heating via subsequent technique.Under the situation of known plug type zone of heating, the open area must form has little width to reduce the contact area between phase-change material layers 16 and the zone of heating 15.Therefore, known method forms the open area by expensive fine patterning technology (for example, using the photoengraving carving technology of ArF exposure source), thereby increases the manufacturing cost of phase change memory device.Yet, because zone of heating 45 can form drum (will describe as following) herein and/or can reduce the size of zone of heating 45 by the subsequent technique that is used to isolate lower electrode 43, therefore even need not open area 50 formed and have little width, the 3rd embodiment also can reduce the contact area between phase-change material layers 46 and the zone of heating 45.Therefore, can form open area 50, the feasible thus manufacturing cost that can reduce phase change memory device by the etch process that uses not expensive patterning techniques.
Referring to Fig. 7 C and Fig. 7 D, comprising the conductive layer 51 that is formed for zone of heating on first insulating barrier 44 of open area 50.The conductive layer 51 that is used for zone of heating can be formed by metal material or metallic compound material.Metal material can be titanium (Ti), tungsten (W), copper (Cu) or aluminium (Al).The metallic compound material can be titanium nitride (TiN), tungsten nitride (WN), TiAlN (TiAlN) or titanium tungsten (TiW).Can control according to the deposit thickness of the conductive layer 51 of zone of heating and treat the zone of heating that forms via subsequent technique and the contact area between the phase-change material layers.
Implement maskless (code-pattern) etch process (for example, etch-back technics) so that be used for the sidewall that the conductive layer 51 of zone of heating only remains on open area 50.That is, the residue conductive layer 51 that is used for zone of heating has drum.Perhaps, what can be after a while remove the conductive layer 51 that is used for zone of heating during the process that forms area of isolation does not need part, such as hereinafter argumentation.
Referring to Fig. 7 E and Fig. 7 F, after the conductive layer 51 that is formed for zone of heating, on first insulating barrier 44, form line style photoresist pattern 52 to expose some or all of space in the open area 50.In some embodiments, photoresist pattern 52 can form perpendicular to line style active area 42.A part that remains on the conductive layer 51 on 50 sidewalls of open area also exposes by photoresist pattern 52.
Pattern 52 stops or mask as etching by making with photoresist, the P-type conduction layer 43B of the lower electrode 43 of etch exposed and the conductive layer 51 that is used for the exposure of zone of heating are to form zone of heating 45 and form common area and area of isolation in lower electrode 43.Can implement the part of etch process, with the P-type conduction layer 43B in two area of isolation of isolating lower electrode 43 fully with etching N type conductive layer 43A.
Form the lower electrode 43 that comprises common area and two area of isolation via above etch process.Common area is by forming at the N type conductive layer 43A that extends port area 50A bottom that obtains as the result of etch process, as shown in Fig. 7 F.Two area of isolation are formed by isolated part and the N of the lower floor type conductive layer 43A of P-type conduction layer 43B.That is, by above etch process, can form lower electrode 43, so that it comprises the PN diode pair of the knot with N type conductive layer 43A and P-type conduction layer 43B, and the N type conductive layer 43A of PN diode is connected to each other.
And zone of heating 45 can have the plug shape by above etch process.
The etch process that can use dry etching process or wet etching process to implement to be used to form zone of heating 45 and have the lower electrode 43 of common area and area of isolation.Dry etching process can use chlorine (Cl 2) implement with the plasma of the mixture of argon gas (Ar), wet etching process can use sulfuric acid (H 2SO 4) and hydrogen peroxide (H 2O 2) the solution or the ammonium hydroxide (NH of mixture 4OH) with hydrogen peroxide (H 2O 2) the solution of mixture implement.
Herein, will be called by the open area 50 that above etch process exposes the N type conductive layer 43A top in the common area and extend port area 50A.
Referring to Fig. 7 G and Fig. 7 H, remove photoresist pattern 52.Can remove photoresist pattern 52 by peeling off (stripping) technology.
Form second insulating barrier 48 and extend space among the port area 50A with filling.Second insulating barrier 48 can be by at least a formation that is selected from oxide skin(coating), nitride layer, oxynitride layer and the stacked structure thereof.
Planarization second insulating barrier 48 is to expose the top of the zone of heating 45 and first insulating barrier 44.Can use chemico-mechanical polishing (CMP) technology or etch-back technics to implement planarization process.
On first insulating barrier 44 and second insulating barrier 48, form phase-change material layers 46 and upper electrode 47 to cover zone of heating 45.Upper electrode 47 can be by forming with zone of heating 45 identical materials.That is, upper electrode 47 can be formed by metal material or metallic compound material.Phase-change material layers 46 can use that (Ge-Sb-Te, GST) chalcogen compound of compound forms such as germanium-antimony-tellurium.
By above technology, can form phase change memory device, so that two phase-change memory cell 53 shared lower electrodes 43.
Though it is not shown, but in some embodiments, form passivation layer to cover upper electrode 47 on first insulating barrier 44 and second insulating barrier 48, the presumptive area of opening passivation layer is finished the manufacturing of phase change memory device thus to form interconnection contact hole and interconnection.
In the above description, form the phase change memory device according to the 3rd embodiment, so that a plurality of (at least two) phase-change memory cell 53 shared lower electrodes 43, making thus significantly to increase the integrated ratio of phase change memory device.
Fig. 8 A is the schematic plan view according to the phase change memory device of the 4th embodiment.Fig. 8 B is the cross-sectional view along the phase change memory device of the line A-A ' intercepting of Fig. 8 A.Fig. 8 C is the cross-sectional view along the phase change memory device of the line B-B ' intercepting of Fig. 8 A.
Referring to Fig. 8 A to Fig. 8 C, comprise according to the phase change memory device of the 4th embodiment: have device isolation regions and active area 62 substrate 61, cover substrate 61 first insulating barrier 64, be arranged on the active area 62 and have the lower electrode 63 of common area and a plurality of area of isolation and be arranged in a plurality of phase-change memory cells 71 on one of area of isolation separately.Each phase-change memory cell 71 comprises: be arranged in zone of heating 65 on the corresponding area of isolation, be arranged in the phase-change material layers 66 on the zone of heating 65 and be arranged in upper electrode 67 on the phase-change material layers 66.Phase change memory device also can comprise the area of isolation that is embedded in lower electrode 63 and second insulating barrier 68 between the zone of heating 65.Reference numeral 69 expressions are arranged in the program area in the phase-change material layers 66.
Common area in the lower electrode 63 is formed by N type conductive layer 63A, and each area of isolation in the lower electrode 63 is formed by the knot of P-type conduction zone 63B and N type conductive layer 63A.That is, lower electrode 63 comprises a plurality of PN diodes, and each in the PN diode has the knot of N type conductive layer 63A and P-type conduction layer 63B, a plurality of phase-change memory cell 71 shared N type conductive layer 63A.P-type conduction layer 63B is electrically connected with respective phase change memory cell 71.
As discussing about Fig. 6 A and Fig. 6 B, zone of heating 65 can be formed by cup-shaped zone of heating 65A or plug type zone of heating 65B or cylindrical shape zone of heating (not shown).If zone of heating 65 is formed by cup-shaped or cylindrical shape zone of heating 65A, then phase change memory device can further comprise the 3rd insulating barrier 70 of filling the space among the zone of heating 65A.The 3rd insulating barrier 70 can be by forming with first insulating barrier 64 and second insulating barrier, 68 identical materials.That is, the 3rd insulating barrier 70 can be by at least a formation that is selected from oxide skin(coating), nitride layer, oxynitride layer and the stacked structure thereof.
Can form phase-change material layers 66 to cover whole zone of heating 65, maybe can form phase-change material layers 66 only covering the part of zone of heating 65, thereby further reduce the contact area between phase-change material layers 66 and the zone of heating 65.
In the above description, in phase change memory device according to the 4th embodiment, a plurality of (at least two) phase-change memory cell 71 shared lower electrodes 63, thereby the feasible integrated ratio that can significantly increase phase change memory device.That is, compare with second embodiment with first embodiment, the 4th embodiment can make the integrated ratio of phase change memory device increase to twice or more than the twice.
And, the 4th embodiment can increase the integrated ratio of phase change memory device and can reduce phase-change material layers 66 and zone of heating 65 between contact area, make the action required electric current can reduce phase change memory device thus.
Can be easily derive the method for making according to the phase change memory device of the 4th embodiment by the method for making according to the phase change memory device of first embodiment and/or second embodiment and/or the 3rd embodiment, therefore for simplicity's sake, the detailed description of back one method will be omitted.
In phase change memory device according to the 3rd embodiment and the 4th embodiment, though two or more adjacent phase-change memory cells (promptly, the structure that comprises zone of heating, phase-change material layers and upper electrode) a shared lower electrode, but phase-change memory cell does not disturb each other.To be described this with reference to figure 9.
Fig. 9 is the perspective view that is used to describe according to the operating principle of the phase change memory device of the 3rd embodiment and the 4th embodiment.Fig. 9 explanation is according to the phase change memory device of the 3rd embodiment, and hypothesis active area 42 is used as word line and upper electrode 47 is used as bit line, but the role of active area 42 and upper electrode 47 can put upside down.
Referring to Fig. 9, word-line signal (for example, first voltage) is applied to active area 42 and simultaneously bit line signal (for example, second voltage) is applied to the first upper electrode 47A, in the phase-change material layers 46A that data is write first unit cell.If second voltage is higher than first voltage, then the lower electrode 43 of first unit cell (that is, a PN diode) has forward condition, and therefore, operating current flow to active area 42 from the first upper electrode 47A.Thus, produce heat at zone of heating 45 places, and the phase-change material layers 46A of first unit cell becomes a kind of in amorphous phase or the crystalline phase according to the intensity of the heat that is produced and duration by operating current.
Because the N type conductive layer 43A of first unit cell and the shared lower electrode 43 of second unit cell (promptly, because first unit cell and second unit cell are electrically connected to each other), can flow to second unit cell by N type conductive layer 43A so be applied to the operating current of first unit cell.Yet operating current can not flow to the second upper electrode 47B to change the phase-change material layers 46B of second unit cell.Its reason is that the operating current that is applied to first unit cell is reverse state in the lower electrode 43 of second unit cell.That is, because reverse biased is applied to the 2nd PN diode, so operating current can not flow in second unit cell.
In a word, although in according to the phase change memory device of third and fourth embodiment shared lower electrode of two or more adjacent phase-change memory cells, memory cell is not disturbed each other.
As mentioned above, in phase change memory device, form zone of heating, the feasible contact area that can reduce effectively between phase-change material layers and the zone of heating.
And, in some embodiments, form phase-change material layers, the feasible thus contact area that can further reduce between phase-change material layers and the zone of heating only to cover the part of zone of heating.
Therefore, reduce the contact area (though still can use this technology in some embodiments when needed) between phase-change material layers and the zone of heating can need not to use expensive fine patterning technology, make the manufacturing cost that can reduce phase change memory device thus.
And two or more phase-change memory cells can a shared lower electrode, and making thus significantly to increase the integrated ratio of phase change memory device.
Therefore, can reduce the action required electric current of phase change memory device and increase the integrated ratio of phase change memory device simultaneously.
Although described particular, it will be readily apparent to one skilled in the art that and to make various changes and modification.

Claims (20)

1. phase change memory device comprises:
Lower electrode; With
At least two phase-change memory cells of shared described lower electrode.
2. according to the phase change memory device of claim 1, at least two area of isolation that wherein said lower electrode comprises common area and one of is connected to separately in described at least two phase-change memory cells.
3. according to the phase change memory device of claim 2, wherein
In the described area of isolation each all comprises the PN diode structure, and described PN diode structure comprises P-type conduction layer and N type conductive layer; With
Described common area one of only comprises in described P-type conduction layer and the described N type conductive layer.
4. according to the phase change memory device of claim 3, wherein
Described common area only comprise described N type conductive layer and
Described P-type conduction layer in described P-type conduction layer in each described at least two phase-change memory cell and other phase-change memory cell is isolated.
5. according to the phase change memory device of claim 3, wherein each described phase-change memory cell comprises:
Zone of heating, it is arranged on the described corresponding area of isolation;
Phase-change material layers, it is arranged on the described zone of heating; With
Upper electrode, it is arranged on the described phase-change material layers.
6. according to the phase change memory device of claim 5, wherein said zone of heating forms a kind of in plug type, cup type and the cylinder type.
7. according to the phase change memory device of claim 6, wherein said phase-change material layers only covers the part of described zone of heating.
8. according to the phase change memory device of claim 3, each in wherein said N type conductive layer and the described P-type conduction layer includes silicon layer.
9. method of making phase change memory device, described method comprises:
Formation comprises the lower electrode of PN diode structure, and described PN diode structure comprises the knot of N type conductive layer and P-type conduction layer;
Form a plurality of heating elements on superposed one in described P-type conduction layer and described N type conductive layer;
Optionally be etched in described superposed in described P-type conduction layer between the described heating element and the described N type conductive layer;
Form the phase-change material layers that separates in described heating element each; With
On each phase-change material layers, form the upper electrode that separates.
10. according to the method for claim 9, wherein each heating element is formed plug type, cup type or cylinder type.
11., wherein described heating element is formed described plug type by following steps according to the method for claim 10:
Formation has the insulating barrier of open area, and described open area exposes described superposed one top in described P-type conduction layer and the described N type conductive layer; With
Fill described open area to obtain described heating element with electric conducting material.
12., wherein described heating element is formed described cup type by following steps according to the method for claim 10:
Formation has the insulating barrier of open area, and described open area exposes described superposed one top in described P-type conduction layer and the described N type conductive layer;
Form conductive layer comprising on the described insulating barrier of described open area; With
Remove the described conductive layer outside described open area.
13., wherein form described phase-change material layers only to cover the part of described corresponding heating element according to the method for claim 10.
14. according to the method for claim 9, each in wherein said N type conductive layer and the described P-type conduction layer forms by silicon layer.
15. a method of making phase change memory device, described method comprises:
On the active area of substrate, form the lower electrode that comprises the PN diode structure;
On described PN diode structure, form zone of heating;
On described zone of heating, form phase-change material layers; With
On described phase-change material layers, form upper electrode;
Contact area between wherein said phase-change material layers and the described zone of heating forms less than the contact area between described zone of heating and the described PN diode structure.
16. according to the method for claim 15, wherein by following steps with described zone of heating form have cup-shaped:
Formation has the insulating barrier of open area, and described open area exposes the top of described PN diode structure;
At the conductive layer that comprises deposition predetermined thickness on the described insulating barrier of described open area; With
Remove the described conductive layer outside described open area, in described open area, keep described conductive layer simultaneously with described predetermined thickness.
17. according to the method for claim 15, wherein said zone of heating forms on described PN diode structure having the top surface of exposure, the part that described phase-change material layers only forms with the top surface of the described exposure of described zone of heating electrically contacts.
18. a phase change memory device comprises:
Substrate has active area on it;
The lower electrode that comprises the PN diode structure on the described active area of described substrate;
Zone of heating on the described PN diode structure;
Phase-change material layers on described zone of heating; With
Upper electrode on described phase-change material layers;
Contact area between wherein said phase-change material layers and the described zone of heating is less than the contact area between described zone of heating and the described PN diode structure.
19. according to the device of claim 18, wherein said zone of heating has cup-shaped.
20. according to the device of claim 18, wherein said phase-change material layers only electrically contacts with the part of the top surface of described zone of heating.
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