CN101630668A - Encapsulation structure of compound semiconductor element and photoelectric element and manufacturing method thereof - Google Patents

Abstract

The invention discloses a packaging structure of a compound semiconductor element and a photoelectric element and a manufacturing method thereof. The crystal grain is fixed on the first surface of the conductive film layer and is electrically connected with the conductive film layer through the metal lead or the metal bump. The transparent encapsulating material covers the first surface of the conductive film layer and the crystal grains, and the second surface of the conductive film layer is exposed out of the transparent encapsulating material, wherein the second surface is relative to the first surface. The invention does not need a printed circuit board to transmit electric signals between the crystal grains and the external electrodes, thereby improving the problem of poor heat dissipation.

Description

Encapsulation structure of compound semiconductor element and photoelectric element and manufacturing method thereof

technical field

The invention relates to a packaging structure of a compound semiconductor element and a manufacturing method thereof, in particular to a thin packaging structure of an optoelectronic semiconductor element and a manufacturing method thereof

Background technique

Due to the advantages of small size, high luminous efficiency and long life in photoelectric components, light emitting diodes (LEDs) are considered to be the best light source for green and energy-saving lighting in the future era. In addition, the rapid development of liquid crystal displays and the popular trend of full-color screens have made white light-emitting diodes not only used in indicator lights and large display screens, but also in a wide range of consumer electronics products, such as mobile phones and personal digital assistants (PDAs). ).

FIG. 1 is a schematic cross-sectional view of a light emitting diode element of a conventional surface mount (SMD) element. The light-emitting diode crystal grain 12 is fixed on the surface of the N-type conductive copper foil 13b on the insulating layer 13c by the crystal-bonding glue 11, and is electrically connected with the P-type conductive copper foil 13a and the N-type conductive copper foil 13b through the metal wire 15, wherein The P-type conductive copper foil 13a, the N-type conductive copper foil 13b, and the insulating layer 13c constitute a substrate 13 with a circuit. In addition, the transparent sealing material 14 covers the substrate 13 , the metal wire 15 and the crystal grain 12 , which can protect the entire LED element 10 from being damaged by the environment and external force.

The light-emitting diode element 10 uses a general printed circuit board as the substrate 13 , so its overall thickness cannot be thinner because it is limited by the thickness of the insulating layer 13 c in the substrate 13 . However, consumer electronic products tend to be light, thin, short, and small in appearance, so the internal components or external housings need to be miniaturized. On the other hand, the insulating layer 13c is usually made of a resin material with poor heat dissipation, which is not conducive to the high-power light-emitting compound semiconductor element as a heat dissipation path for heat conduction.

To sum up, there is a great need for a thin optoelectronic compound semiconductor element in the market. In addition to being thinner and saving space, it also needs to improve the problem of poor heat dissipation, which will be more beneficial for high-power components. make.

Contents of the invention

The present invention provides a packaging structure of a compound semiconductor element and a manufacturing method thereof. The semiconductor element directly exposes external electrodes or contacts to the sealing material, without the need for a printed circuit board to transmit electrical signals between the crystal grain and the external electrodes. Therefore, It can improve the problem of poor heat dissipation.

The invention provides a package structure of an ultra-thin semiconductor element and a manufacturing method thereof. Due to the use of a thin substrate, the thickness of the element can be thinner and the occupied space can be saved.

In order to achieve the above purpose, the present invention discloses a packaging structure of a compound semiconductor device, which includes a conductive film layer with a pattern, a crystal grain and a transparent sealing material. The grain is fixed on the first surface of the conductive film layer. The transparent sealing material covers the first surface of the conductive film layer and the crystal grain, and the second surface of the conductive film layer is exposed to the transparent sealing material, wherein the second surface is opposite to the first surface .

The grain is electrically connected to the conductive film layer through at least one metal wire, or is electrically connected to the conductive film layer through a plurality of bumps.

The second surface of the conductive film layer is exposed to the transparent sealing material, and its material is silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metals, or indium tin oxide, indium zinc oxide, indium gallium oxide or indium tungsten oxide.

The conductive film layer includes N-type electrodes and P-type electrodes.

Phosphor is also mixed in the transparent sealing material.

The crystal grain is fixed on the first surface of the conductive film layer through crystal bonding glue or eutectic bonding.

The present invention also discloses a manufacturing method of a compound semiconductor element packaging structure, comprising the following steps: providing a temporary substrate; forming a patterned conductive film layer on the surface of the temporary substrate, wherein the conductive film layer includes a first surface and a second surface opposite to the first surface; fixing crystal grains on the first surface of the conductive film layer; covering a transparent sealing material on the first surface of the conductive film layer and the crystal grains; and removing the Temporary substrate.

The present invention also includes the step of electrically connecting the crystal grain and the conductive film layer by using wire bonding technology through a plurality of metal wires.

It also includes the step of electrically connecting the crystal grain and the conductive film layer by using flip-chip technology through a plurality of bumps.

The conductive film layer is formed on the temporary substrate by printing, screen printing, electroforming, electroless plating or sputtering.

The temporary substrate is removed by bending, separating, etching, laser cutting or grinding.

In the manufacturing method of the compound semiconductor device packaging structure, the second surface of the conductive film layer is exposed to the transparent sealing material.

In the manufacturing method of the package structure of the compound semiconductor device, the material of the conductive film layer is silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metals.

In the manufacturing method of the package structure of the compound semiconductor element, the material of the conductive film layer is indium tin oxide, indium zinc oxide, indium gallium oxide or indium tungsten oxide.

In the manufacturing method of the encapsulation structure of the compound photoelectric element, it also includes wrapping a reflective layer on the outside of the transparent sealing material.

The invention also discloses a packaging structure of a compound semiconductor element, which includes a thin substrate, a crystal grain and a transparent sealing material. The thin substrate includes an upper conductive film layer, an insulating film layer with multiple openings and a lower conductive film layer, wherein the insulating film layer is sandwiched between the upper conductive film layer and the lower conductive film layer. The crystal grain is fixed on the upper conductive film layer, and the transparent sealing material covers the upper conductive film layer and the crystal grain.

The upper conductive film layer and the lower conductive film layer respectively include an N-type electrode and a P-type electrode, and the N-type electrode of the upper conductive film layer and the N-type electrode of the lower conductive film layer are in contact through the plurality of openings, and the The P-type electrodes of the upper conductive film layer and the P-type electrodes of the lower conductive film layer are in contact through the plurality of openings.

In the packaging structure of the compound semiconductor element, the thickness of the insulating film layer is 0.01mm-0.1mm.

The thickness of this insulating film layer is preferably 0.01mm～0.1mm, and its material is polyimide, polyethylene (PV), polycarbonate (PC), polyvinyl chloride (PVC), polymethyl methacrylate ( PMMA), acrylic.

In the packaging structure of the compound semiconductor device, at least one metal wire is further included, and the metal wire is electrically connected to the crystal grain and the upper conductive film layer.

In the packaging structure of the compound semiconductor device, a plurality of bumps are also included, and the plurality of bumps are electrically connected to the crystal grain and the upper conductive film layer.

In the encapsulation structure of the compound semiconductor element, a reflective layer is also coated on the outside of the transparent sealing material.

The present invention also discloses a manufacturing method of a compound semiconductor element packaging structure, comprising the following steps: firstly provide an insulating film layer with a plurality of openings; respectively form an upper conductive film layer and a lower conductive film layer on the two surfaces of the insulating film layer , wherein the upper conductive film layer and the lower conductive film layer are in contact with each other through the plurality of openings; the crystal grain is fixed on the upper conductive film layer; and the transparent sealing material is covered on the upper conductive film layer and the crystal grain.

The present invention also includes two steps of forming the insulating film layer on the board and forming the plurality of openings on the insulating film layer.

The insulating film layer is formed into a thin film on the board by means of coating, soaking or sol-gel.

The plurality of openings are formed on the insulating film layer by mechanical drilling, laser drilling or plasma etching.

The upper conductive film layer and the lower conductive film layer are formed on the surface of the insulating film layer by means of electroplating, printing or copper foil pressing.

In the manufacturing method of the compound semiconductor element packaging structure, the upper conductive film layer and the lower conductive film layer respectively include an N-type electrode and a P-type electrode, and the N-type electrode of the upper conductive film layer and the N-type electrode of the lower conductive film layer The electrodes are in contact through the multiple openings, and the P-type electrodes of the upper conductive film layer and the P-type electrodes of the lower conductive film layer are in contact with each other through the multiple openings.

In the manufacturing method of the package structure of the compound semiconductor device, it also includes the step of electrically connecting the crystal grain and the upper conductive film layer through a plurality of metal wires by using wire bonding technology.

In the manufacturing method of the package structure of the compound semiconductor device, it also includes the step of electrically connecting the crystal grain and the upper conductive film layer by using the flip-chip technology through a plurality of bumps.

In the manufacturing method of the packaging structure of the compound semiconductor element, it also includes covering the reflective layer on the outside of the transparent sealing material.

The invention also discloses a packaging structure of a compound semiconductor element, which comprises a thin substrate with a first electrode and a second electrode; a compound semiconductor crystal grain located on the thin substrate; method; and the transparent adhesive material covers the semiconductor crystal grain.

The thin substrate can be a conductive film with a pattern or a composite substrate, and the composite substrate includes a first conductive layer with a pattern, an insulating film with a plurality of through holes, and a second conductive layer with a pattern.

The semiconductor die can be a light-emitting diode die, a laser diode or a light-sensing die.

The method for affixing the semiconductor crystal grain to the film-type substrate includes electrically connecting the semiconductor crystal grain to the film-type substrate by wire bonding or flip-chip bonding. The semiconductor crystal grains can be fixed on the thin-film substrate by using crystal bonding glue or by eutectic bonding during wire bonding.

It also includes light conversion material mixed in the transparent adhesive material, wherein the light conversion material can be fluorescent powder, and the transparent adhesive material can be epoxy resin (epoxy) or silicone (silicone).

It also includes covering the reflective layer on the outside of the transparent sealing material.

The present invention also discloses a manufacturing method of a compound semiconductor element packaging structure, which includes the following steps: providing a thin-film substrate having a first electrode and a second electrode; The positive electrode of the particle is electrically connected to the first electrode, and the negative electrode of the semiconductor crystal grain is electrically connected to the second electrode; and the semiconductor crystal grain is covered with a transparent adhesive material.

The patterned conductive film forms a patterned conductive film on a temporary substrate, and the temporary substrate is removed after the transparent adhesive material wraps the semiconductor crystal grain.

The conductive film layer is formed on the temporary substrate by printing, screen printing, electroforming, electroless plating or sputtering, and the temporary substrate is removed by bending, separating, etching, laser cutting or grinding.

The composite substrate includes a first patterned conductive layer, an insulating film with a plurality of through holes and a second patterned conductive layer.

The method for forming the composite substrate includes: providing the insulating film with a plurality of through holes; applying the first conductive layer with a pattern and the second conductive layer with a pattern on opposite sides of the insulating film with a plurality of through holes , so that the patterned first conductive layer is electrically connected to the patterned second conductive layer through the plurality of through holes.

In the manufacturing method of the package structure of the compound semiconductor device, the semiconductor die can be a light-emitting diode die, a laser diode or a light-sensing die.

In the manufacturing method of the semiconductor element packaging structure, the step of affixing the semiconductor crystal grain to the film-type substrate includes electrically connecting the semiconductor crystal grain to the film-type substrate by wire bonding or flip-chip bonding. substrate.

In the manufacturing method of the packaging structure of the semiconductor element, the semiconductor crystal grain can be fixed on the thin-film substrate by using die-bonding glue or by eutectic bonding during wire bonding.

In the manufacturing method of the packaging structure of the semiconductor element, it also includes mixing a light conversion material in the transparent glue, wherein the light conversion material can be fluorescent powder.

In the manufacturing method of the packaging structure of the semiconductor element, the transparent adhesive material can be epoxy resin or silicone.

In the manufacturing method of the packaging structure of the semiconductor element, it also includes covering the reflective layer on the outside of the transparent sealing material.

Description of drawings

1 is a schematic cross-sectional view of a known surface mount (SMD) type light emitting diode element;

Fig. 2 (a) ~ Fig. 2 (f) are the step schematic diagrams of the manufacturing method of the compound semiconductor element packaging structure of the present invention;

Fig. 3 (a) and Fig. 3 (b) are the cross-sectional view and the top view of the compound semiconductor device package structure of two other embodiments of the present invention;

Fig. 4 is an exploded view of each layer of the ultra-thin substrate of the present invention;

Figure 5 is a sectional view of the ultra-thin substrate of the present invention;

Fig. 6 (a) ~ Fig. 6 (b) are the sectional views of the package structure of the compound semiconductor element of two other embodiments of the present invention; And

FIG. 7 is a top view of a package structure of a compound semiconductor device according to another embodiment of the present invention.

Wherein, the reference signs are explained as follows:

10 Light-emitting diode element 11 Dielectric material layer

12 Die 13 Substrate

13aP type conductive copper foil           13bN type conductive copper foil

13c insulating layer 14 transparent sealing material

15 metal wires 20 compound semiconductor components

21 substrate 22 conductive film layer

23 crystal grains 24 solid crystal glue

25 metal wires 26 transparent sealing material

27 Phosphor 28 Reflective layer

30 compound semiconductor element 32 conductive film layer

33 grains 35, 75 bumps

36 Transparent sealing material 38 Reflective layer

40 substrate 41 upper conductive film layer

42 insulating film layer 43 lower conductive film layer

20', 30', 60, 60', 70 compound semiconductor components

63, 63', 73 grains 64 die-bonding glue

65, 65' metal wire 66 transparent sealing material

67 phosphors 211 first surface

212 second surface 221N type electrode

222P type electrode 223 first surface

224 second surface 321N type electrode

322P type electrode 323 first surface

324 second surface 411P type electrode

412N electrode 421 film

422 opening 431P type electrode

432N type electrode

Detailed ways

2(a) to 2(e) are schematic diagrams of the steps of the manufacturing method of the compound semiconductor element packaging structure of the present invention. As shown in FIG. 2( a ), the temporary substrate 21 has a first surface 211 and a second surface 212 , in which the first surface 211 is an upper surface, and the second surface 212 is a lower surface. Temporary substrate 21 can be made of metal material, ceramic material or polymer material, and printing (printing), screen printing (screening), electroform (electroform), electroless plating (electroless plating) are arranged on its first surface 211. electroplating) or sputtering (sputter) to form a patterned conductive film layer 22 . The conductive film layer 22 can be silver, nickel, copper, tin, aluminum or an alloy of the aforementioned metal materials, or indium tin oxide (ITO), indium zinc oxide (IZO), indium gallium oxide (IGO) and indium tungsten oxide (IWO) and other transparent conductive materials, and include N-type electrodes 221 and P-type electrodes 222 , or contact patterns in more independent regions.

As shown in Figures 2(b) to 2(c), a compound semiconductor crystal grain 23 is fixed on the N-type electrode 221 by a die-bonding glue 24, and then wire bonding or wire-bonding is used. technology and complete the electrical connection between the crystal grain 23 , the N-type electrode 221 and the P-type electrode 222 with the metal wire 25 . The die 23 can also be fixed on the N-type electrode 221 by eutectic bonding, thereby replacing the use of the die-bonding glue 24 . Then cover the transparent sealing material 26 on the crystal grain 23, the N-type electrode 221, the P-type electrode 222 and the metal wire 25, for example: epoxy resin (epoxy) or silica gel (silicone; also known as siloxane), the transparent sealing material The glue material 26 can be mixed into the phosphor 27 , so that it can be excited to generate secondary light, which can be mixed with the primary light generated by the crystal grain 23 to form white light or other kinds of electromagnetic radiation with multiple wavelengths. The mixed phosphor 27 can be made of different phosphors such as yttrium aluminum garnet (YAG), terbium aluminum garnet (TAG), silicate, and nitride-based. The transparent sealing material 26 can be covered on the die 23 by transfer-molding or injection-molding.

After the transparent sealing material 26 hardens, the substrate 21 can be removed by bending, separating, etching, laser cutting or grinding, so that the second surface 224 of the conductive film layer 22 is exposed on the transparent sealing material 26. The packaging structure of the semiconductor element 20 is completed, as shown in FIG. 2( e ). Moreover, the second surface 224 of the conductive film layer 22 is opposite to the first surface 223 , and the first surface 223 is still covered by the transparent sealing material 26 .

In order to allow the semiconductor crystal grains 23 to emit from the upper surface of the transparent sealing material 26 , a reflective layer 28 can be coated around the transparent sealing material 26 , as shown in FIG. 2( f ). The light emitted by the crystal grain 23 in the compound semiconductor device 20 ′ is reflected by the light-reflecting layer 28 and directed above the circuit surface of the crystal grain 23 , and then passes through the transparent sealing material 26 to be emitted to the outside. The material of the reflective layer 28 may be an opaque adhesive material including a material with a high reflectance, such as titanium dioxide.

The second surfaces 224 of the N-type electrodes 221 and the P-type electrodes 222 are exposed from the transparent sealing material 26 , so they can be used as external contacts for surface mounting. On the other hand, the heat generated by the die 23 directly passes through the thin conductive film layer 22 with good heat conduction, so the heat dissipation efficiency of the packaging structure can be increased. Compared with the prior art, the compound semiconductor device 20 of the present invention does not need the entire printed circuit board as a part of the packaging structure, so the thickness can be reduced to 0.2mm-0.15mm. In this embodiment, the die 23 can be a light emitting diode, a laser diode, or a photocell.

FIG. 3( a ) is a cross-sectional view of a package structure of a compound semiconductor device according to another embodiment of the present invention. The compound semiconductor device 30 includes a patterned conductive film layer 32 , crystal grains 33 and a transparent sealing material 36 . The crystal grain 33 is flip-chip fixed on the first surface 323 of the conductive film layer 32 , and is electrically connected to the N-type electrode 321 and the P-type electrode 322 through a plurality of bumps 35 . The transparent sealing material 36 covers the first surface 323 of the conductive film layer 32 and the crystal grain 33 , and the second surface 324 of the conductive film layer 32 is exposed from the transparent sealing material 36 .

In order to allow the crystal grains 33 to emit from the upper surface of the transparent sealing material 36 , a reflective layer 38 can be coated around the transparent sealing material 36 , as shown in FIG. 3( b ). The light emitted by the crystal grain 33 in the compound semiconductor device 30 ′ is reflected by the light-reflecting layer 38 and directed above the circuit surface of the crystal grain 33 , and then passes through the transparent sealing material 36 to be emitted to the outside. In this embodiment, the die 33 can be a light emitting diode, a laser diode, or a photocell.

FIG. 4 is an exploded view of various layers of the ultra-thin substrate of the present invention, and FIG. 5 is a cross-sectional view of the ultra-thin substrate of the present invention. The ultra-thin substrate 40 includes an upper conductive film layer 41, an insulating film layer 42 and a lower conductive film layer 43. The N-type electrode 412 of the upper conductive film layer 41 passes through a plurality of openings 422 on the insulating film layer 42 and the lower conductive film layer. 43 in contact with the N-type electrode 432, as shown in FIG. 5 . Similarly, the P-type electrodes 411 of the upper conductive film layer 41 are also in contact with the P-type electrodes 431 of the lower conductive film layer 43 through the plurality of openings 422 on the insulating film layer 42 . Since the thickness of the insulating film layer 42 is about 0.01-0.1 mm, the upper conductive film layer 41 and the lower conductive film layer 43 are easily in contact with each other through the opening 422 . The insulating film layer 42 can be a film 421 made of polyimide, polyethylene (PV), polycarbonate (PC), polyvinyl chloride (PVC), polymethyl methacrylate (PMMA), or acrylic, The polyimide material is first formed into a thin film 421 on the plate by coating, dipping or sol-gel, and then an opening 42 with a diameter of about 0.1 mm is formed by mechanical drilling, laser drilling or plasma etching. on the film 421. The upper conductive film layer 41 and the lower conductive film layer 43 are formed by electroplating, printing or copper foil lamination. In addition, the upper conductive film layer 41 and the lower conductive film layer 43 can easily transfer heat to each other through the plurality of openings 422 .

6( a ) to 6 ( b ) are cross-sectional views of compound semiconductor device packaging structures according to other two embodiments of the present invention. The compound semiconductor device 60 includes a substrate 40 , a die 63 , a metal wire 65 and a transparent sealing material 66 . The crystal grain 63 is fixed on the surface of the substrate 40 through a solid crystal adhesive 64 with good conductivity or by eutectic process, and the back side is an N-type substrate which can be electrically connected to the N-type electrode 412 through the solid crystal adhesive 64 . In addition, as shown in Figure 6(b), the substrate of the crystal grain 63' in the compound semiconductor element 60' is a non-conductive material, such as a sapphire substrate, so two metal wires 65' are required to connect the crystal grain 63' respectively And the N-type electrode 412 and the P-type electrode 411 . The transparent sealing material 66 can be mixed with phosphor 67 , so that it can be excited to generate secondary light, which is mixed with the primary light generated by the crystal 63 ′ to form white light or other electromagnetic radiation with multiple wavelengths. The mixed phosphor 67 can be made of different phosphors such as yttrium aluminum garnet (YAG), terbium aluminum garnet (TAG), silicate, and nitride-based. In this embodiment, the die 63 can be a light emitting diode, a laser diode, or a photocell. The transparent sealing material 66 can be covered on the die 63 by transfer-molding or injection-molding.

FIG. 7 is a cross-sectional view of a package structure of a compound semiconductor device according to another embodiment of the present invention. The compound semiconductor device 70 includes a substrate 40 , a die 73 and a transparent sealing material 66 . The die 33 is flip-chip fixed on the substrate 40 , and is electrically connected to the N-type electrode 412 and the P-type electrode 411 through a plurality of bumps 75 . In this embodiment, the die 73 can be a light emitting diode, a laser diode, or a photocell. In the two embodiments shown in FIG. 6 and FIG. 7 , the reflective layer can be used to increase the brightness of the emitted light.

The technical content and technical features of the present invention have been disclosed above, but those skilled in the art may still make various replacements and modifications based on the hints and disclosures of the present invention without departing from the spirit of the present invention. Therefore, the protection scope of the present invention should not be limited to the scope disclosed in the embodiments, but should include various replacements and modifications that do not depart from the present invention, and are covered by the claims.

Claims (14)

1. the encapsulating structure of a compound semiconductor element comprises:

Slim substrate has first electrode and second electrode;

Compound semiconductor crystal grain is positioned on this slim substrate;

This semiconductor grain is fixed in this slim substrate; And

The transparent adhesive tape material coats this semiconductor grain.

2. the encapsulating structure of compound semiconductor element according to claim 1, wherein this slim substrate is conductive film or the compound substrate with pattern, and this compound substrate comprises first conductive layer with pattern, second conductive layer that has the insulation film of a plurality of open-works and have pattern again.

3. the encapsulating structure of compound semiconductor element according to claim 1 and 2, wherein this semiconductor grain is LED crystal particle, laser diode or light sensing crystal grain.

4. the encapsulating structure of compound semiconductor element according to claim 1 and 2 also comprises light-converting material and is blended in this transparent adhesive tape material, and wherein this light-converting material is a fluorescent material, and wherein this transparent adhesive tape material is epoxy resin or siloxanes.

5. the encapsulating structure of compound semiconductor element according to claim 1 also is included in transparent adhesive material and coats the reflector outward.

6. the manufacture method of a compound optoelectronic component packaging structure, its step comprises:

Slim substrate is provided, and it has first electrode and second electrode;

Semiconductor grain is fixed on this slim substrate, make the positive pole of this semiconductor grain be electrically connected to this first electrode, and the negative pole of this semiconductor grain is electrically connected to this second electrode; And

The transparent adhesive tape material is coated this semiconductor grain.

7. the manufacture method of compound optoelectronic component packaging structure according to claim 6, wherein this slim substrate is conductive film or the compound substrate with pattern, wherein this compound substrate comprises first conductive layer with pattern, have the insulation film of a plurality of open-works, and second conductive layer with pattern.

8. the manufacture method of compound optoelectronic component packaging structure according to claim 7, wherein this conductive film with pattern forms the conductive film with pattern on the temporary substrate, and after coating this semiconductor grain, this transparent adhesive tape material removes this temporary substrate, wherein this conductive film layer is formed at this temporary substrate with printing, wire mark, electroforming, change plating or sputter, and the mode of this temporary substrate by bending, separation, etching, laser cutting or grinding removes.

9. the manufacture method of compound optoelectronic component packaging structure according to claim 7, the conductive layer that wherein this compound substrate comprises first conductive layer with pattern, insulation film and second with a plurality of open-works has pattern.

10. the manufacture method of compound optoelectronic component packaging structure according to claim 9, wherein above-mentioned compound substrate formation method comprises:

Provide this to have the insulation film of a plurality of open-works;

This first conductive layer with pattern and this second conductive layer with pattern are put on the relative two sides of this insulation film with a plurality of open-works, make this have between first conductive layer of pattern and this second conductive layer by should a plurality of open-works electric connections with pattern.

11. according to the manufacture method of claim 6,7,8,9 or 10 described compound optoelectronic component packaging structures, wherein this semiconductor grain is LED crystal particle, laser diode or light sensing crystal grain.

12. the manufacture method of compound optoelectronic component packaging structure according to claim 6, wherein this step that this semiconductor grain is fixed in this slim substrate comprises with routing and engages or the flip-chip bond mode is electrically connected to this slim substrate with this semiconductor grain, and wherein this semiconductor grain is fixed in this slim substrate with crystal-bonding adhesive or eutectic juncture when routing engages.

13. manufacture method according to claim 6,7,8,9,10 or 12 described compound optoelectronic component packaging structures, also comprising light-converting material is blended in this transparent adhesive tape material, wherein this light-converting material can be fluorescent material, and wherein this transparent adhesive tape material is epoxy resin or siloxanes.

14., also be included in this transparent adhesive material and coat the reflector outward according to the manufacture method of claim 6,7,8,9,10 or 12 described compound optoelectronic component packaging structures.

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