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CN101656043B - Pixel circuit, active matrix organic light emitting diode display and driving method - Google Patents

Pixel circuit, active matrix organic light emitting diode display and driving method Download PDF

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CN101656043B
CN101656043B CN2009101619291A CN200910161929A CN101656043B CN 101656043 B CN101656043 B CN 101656043B CN 2009101619291 A CN2009101619291 A CN 2009101619291A CN 200910161929 A CN200910161929 A CN 200910161929A CN 101656043 B CN101656043 B CN 101656043B
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storage capacitors
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CN101656043A (en
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蔡宗廷
吴元均
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AUO Corp
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Abstract

The invention provides a pixel circuit, an active matrix organic light emitting diode display and a driving method. The driving transistor is used for generating pixel current according to the charge quantity stored in the storage capacitor so as to drive the organic light-emitting diode to generate corresponding brightness; the on/off states of the first to fourth switching transistors are controlled by the same scanning signal, and the pixel current flowing through the organic light emitting diode is independent of the power supply voltage and the threshold voltage of the driving transistor through the electrical coupling relationship of the first to fourth switching transistors and can be improved along with the rise of the cross voltage of the organic light emitting diode after long-time operation. The invention also provides an active matrix organic light-emitting diode display adopting the pixel circuit and a driving method of the pixel circuit.

Description

像素电路、主动式矩阵有机发光二极管显示器及驱动方法 Pixel circuit, active matrix organic light emitting diode display and driving method

技术领域technical field

本发明是有关于一种有机发光二极管显示技术领域,且特别是有关于一种像素电路、主动式矩阵有机发光二极管显示器以及驱动方法。The invention relates to the technical field of organic light emitting diode display, and in particular to a pixel circuit, an active matrix organic light emitting diode display and a driving method.

背景技术Background technique

主动式矩阵有机发光二极管(Organic Light Emitting Diode,OLED)显示器的像素一般以晶体管搭配储存电容来储存电荷,以控制有机发光二极管的亮度表现。请参见图1,其为传统像素电路的示意图。像素电路200包括P型驱动晶体管202、N型开关晶体管204、储存电容Cst以及有机发光二极管210。驱动晶体管202的源极S电性耦接至电源电压OVDD;开关晶体管204的栅极G因电性耦接关系而接收扫描信号SCAN,漏极D因电性耦接关系而接收数据电压Vdata,源极S电性耦接至驱动晶体管202的栅极;储存电容Cst的两端跨接于驱动晶体管202的栅极G与源极S的间,其电容跨压标示为Vsg;有机发光二极管210的阳极电性耦接至驱动晶体管202的漏极D,阴极电性耦接至另一电源电压OVSS。前述像素结构通过电容跨压Vsg控制流过驱动晶体管202的电流大小,即流过有机发光二极管210的像素电流Ioled=K*(Vsg-VTH)2;其中,K为常数,Vsg的大小相关于电源电压OVDD及数据电压Vdata的大小,VTH为驱动晶体管202的临界电压。Pixels of an active matrix OLED (Organic Light Emitting Diode, OLED) display generally use transistors and storage capacitors to store charges to control the brightness of the OLED. Please refer to FIG. 1 , which is a schematic diagram of a conventional pixel circuit. The pixel circuit 200 includes a P-type driving transistor 202 , an N-type switching transistor 204 , a storage capacitor Cst, and an OLED 210 . The source S of the driving transistor 202 is electrically coupled to the power supply voltage OVDD; the gate G of the switching transistor 204 receives the scan signal SCAN due to the electrical coupling relationship, and the drain D receives the data voltage Vdata due to the electrical coupling relationship, The source S is electrically coupled to the gate of the driving transistor 202; the two ends of the storage capacitor Cst are connected between the gate G and the source S of the driving transistor 202, and the voltage across the capacitor is marked as V sg ; the organic light emitting diode The anode of 210 is electrically coupled to the drain D of the driving transistor 202 , and the cathode is electrically coupled to another power supply voltage OVSS. The foregoing pixel structure controls the magnitude of the current flowing through the driving transistor 202 through the capacitor cross voltage V sg , that is, the pixel current I oled flowing through the organic light emitting diode 210 =K*(V sg −V TH ) 2 ; where K is a constant, V The magnitude of sg is related to the magnitude of the power supply voltage OVDD and the data voltage Vdata, and V TH is the threshold voltage of the driving transistor 202 .

由于主动式矩阵有机发光二极管显示器上的电源电压OVDD于每个像素间都相连接在一起,当驱动有机发光二极管210发亮时,电源电压OVDD金属在线会有电流流过,而由于本身OVDD金属在线具有阻抗,所以会有电源电压降(IR-drop)存在,使得每一颗像素的电源电压OVDD会有差异,造成像素与像素之间会有像素电流Ioled差异,流过OLED的电流不同其所产生的亮度就会不同,造成面板显示不均匀。另外,由于制造工艺的影响,每一个像素的驱动晶体管202的临界电压VTH均不相同,导致即使给予相同的数据电压Vdata,其所产生的像素电流仍然会有差异,造成面板显示不均匀。此外,有机发光二极管210随着使用时间增加会产生材料衰减问题以致于有机发光二极管210的跨压上升,如此便会造成像素电流Ioled下降,进而导致面板的整体显示亮度下降。Because the power supply voltage OVDD on the active matrix organic light emitting diode display is connected together between each pixel, when the organic light emitting diode 210 is driven to light up, the power supply voltage OVDD metal line will have a current flow, and because the OVDD metal itself The line has impedance, so there will be a power supply voltage drop (IR-drop), which will cause a difference in the power supply voltage OVDD of each pixel, resulting in a difference in the pixel current I oled between pixels, and the current flowing through the OLED is different. The resulting brightness will be different, resulting in uneven panel display. In addition, due to the influence of the manufacturing process, the threshold voltage VTH of the driving transistor 202 of each pixel is different, so even if the same data voltage Vdata is given, the generated pixel current still varies, resulting in uneven panel display. In addition, the organic light emitting diode 210 will cause material attenuation as the usage time increases, so that the cross-voltage of the organic light emitting diode 210 will increase, which will cause the pixel current I oled to decrease, and then cause the overall display brightness of the panel to decrease.

发明内容Contents of the invention

本发明的目的的一就是在提供一种像素电路,以改善面板显示不均匀的问题以及有机发光二极管的材料衰减问题。One of the objectives of the present invention is to provide a pixel circuit to improve the problem of uneven panel display and the problem of material attenuation of organic light emitting diodes.

本发明的再一目的是提供一种主动式矩阵有机发光二极管显示器,以改善面板显示不均匀的问题以及有机发光二极管的材料衰减问题。Another object of the present invention is to provide an active matrix organic light emitting diode display, so as to improve the problems of panel display unevenness and material degradation of organic light emitting diodes.

本发明的又一目的是提供一种像素电路的驱动方法,以改善面板显示不均匀的问题以及有机发光二极管的材料衰减问题。Another object of the present invention is to provide a method for driving a pixel circuit, so as to improve the problem of uneven panel display and the problem of material attenuation of organic light emitting diodes.

本发明一实施例提出的一种像素电路,其包括:有机发光二极管、储存电容、驱动晶体管、第一开关晶体管、第二开关晶体管、第三开关晶体管以及第四开关晶体管。其中,储存电容包括第一端及第二端;驱动晶体管用以驱动有机发光二极管发亮,其第一源/漏极电性耦接至储存电容的第一端,第二源/漏极电性耦接至有机发光二极管;第一开关晶体管的栅极因电性耦接关系而接收扫描信号,其第一源/漏极电性耦接至预设电压,第二源/漏极电性耦接至储存电容的第一端;第二开关晶体管的栅极因电性耦接关系而接收前述扫描信号,其第一源/漏极电性耦接至储存电容的第二端,第二源/漏极电性耦接至驱动晶体管的栅极;第三开关晶体管的栅极因电性耦接关系而接收前述扫描信号,其第一源/漏极电性耦接至驱动晶体管的第二源/漏极,第二源/漏极电性耦接至驱动晶体管的栅极;第四开关晶体管的栅极因电性耦接关而接收前述扫描信号,其的第一源/漏极电性耦接至储存电容的第二端,第二源/漏极因电性耦接关系而接收数据电压。A pixel circuit provided by an embodiment of the present invention includes: an organic light emitting diode, a storage capacitor, a driving transistor, a first switching transistor, a second switching transistor, a third switching transistor, and a fourth switching transistor. Wherein, the storage capacitor includes a first end and a second end; the driving transistor is used to drive the organic light emitting diode to light up, and its first source/drain is electrically coupled to the first end of the storage capacitor, and the second source/drain is electrically coupled to the first end of the storage capacitor. is electrically coupled to the organic light emitting diode; the gate of the first switching transistor receives the scan signal due to the electrical coupling relationship, its first source/drain is electrically coupled to a preset voltage, and the second source/drain is electrically Coupled to the first end of the storage capacitor; the gate of the second switching transistor receives the aforementioned scan signal due to the electrical coupling relationship, and its first source/drain is electrically coupled to the second end of the storage capacitor, and the second The source/drain is electrically coupled to the gate of the driving transistor; the gate of the third switch transistor receives the aforementioned scanning signal due to the electrical coupling relationship, and its first source/drain is electrically coupled to the first gate of the driving transistor. Two sources/drains, the second source/drain is electrically coupled to the gate of the driving transistor; the gate of the fourth switching transistor receives the aforementioned scanning signal due to the electrical coupling, and the first source/drain of it Electrically coupled to the second end of the storage capacitor, the second source/drain receives the data voltage due to the electrical coupling.

在本发明的一实施例中,前述的第一开关晶体管及第二开关晶体管的导通/截止状态与第三开关晶体管及第四开关晶体管的导通/截止状态相反。进一步地,第一开关晶体管及第二开关晶体管可为P型晶体管,第三开关晶体管及第四开关晶体管可为N型晶体管。In an embodiment of the present invention, the on/off states of the aforementioned first switch transistor and the second switch transistor are opposite to the on/off states of the third switch transistor and the fourth switch transistor. Further, the first switch transistor and the second switch transistor may be P-type transistors, and the third switch transistor and the fourth switch transistor may be N-type transistors.

本发明再一实施例提出的一种主动式矩阵有机发光二极管显示器,其包括:数据驱动电路、扫描驱动电路以及至少一像素。其中,像素包括:有机发光二极管、储存电容、驱动晶体管、第一开关晶体管、第二开关晶体管、第三开关晶体管及第四开关晶体管。储存电容包括第一端及第二端;驱动晶体管用以驱动有机发光二极管发亮,其第一源/漏极电性耦接至储存电容的第一端,第二源/漏极电性耦接至有机发光二极管;第一开关晶体管的栅极透过扫描线电性耦接至扫描驱动电路,第一源/漏极电性耦接至预设电压,第二源/漏极电性耦接至储存电容的第一端;第二开关晶体管的栅极透过前述扫描线电性耦接至扫描驱动电路,第一源/漏极电性耦接至储存电容的第二端,第二源/漏极电性耦接至驱动晶体管的栅极;第三开关晶体管的栅极透过前述扫描线电性耦接至扫描驱动电路,第一源/漏极电性耦接至驱动晶体管的第二源/漏极,第二源/漏极电性耦接至驱动晶体管的栅极;第四开关晶体管的栅极透过前述扫描线电性耦接至扫描驱动电路,第一源/漏极电性耦接至储存电容的第二端,第二源/漏极透过数据线电性耦接至数据驱动电路。再者,第一开关晶体管及第二开关晶体管的栅极开启电压与第三开关晶体管及第四开关晶体管的栅极开启电压互为反相。进一步地,第一开关晶体管及第二开关晶体管可为P型晶体管,第三开关晶体管及第四开关晶体管可为N型晶体管。Another embodiment of the present invention provides an active matrix organic light emitting diode display, which includes: a data driving circuit, a scanning driving circuit and at least one pixel. Wherein, the pixel includes: an organic light emitting diode, a storage capacitor, a driving transistor, a first switching transistor, a second switching transistor, a third switching transistor and a fourth switching transistor. The storage capacitor includes a first end and a second end; the driving transistor is used to drive the organic light emitting diode to light up, and its first source/drain is electrically coupled to the first end of the storage capacitor, and the second source/drain is electrically coupled to the first end of the storage capacitor. connected to the organic light emitting diode; the gate of the first switching transistor is electrically coupled to the scanning driving circuit through the scanning line, the first source/drain is electrically coupled to a preset voltage, and the second source/drain is electrically coupled Connected to the first end of the storage capacitor; the gate of the second switching transistor is electrically coupled to the scan driving circuit through the aforementioned scan line, the first source/drain is electrically coupled to the second end of the storage capacitor, and the second The source/drain is electrically coupled to the gate of the driving transistor; the gate of the third switch transistor is electrically coupled to the scanning driving circuit through the scanning line, and the first source/drain is electrically coupled to the driving transistor. The second source/drain, the second source/drain is electrically coupled to the gate of the drive transistor; the gate of the fourth switch transistor is electrically coupled to the scan drive circuit through the aforementioned scan line, the first source/drain The electrode is electrically coupled to the second end of the storage capacitor, and the second source/drain is electrically coupled to the data driving circuit through the data line. Furthermore, the turn-on voltages of the gates of the first switch transistor and the second switch transistor are opposite to the turn-on voltages of the gates of the third switch transistor and the fourth switch transistor. Further, the first switch transistor and the second switch transistor may be P-type transistors, and the third switch transistor and the fourth switch transistor may be N-type transistors.

本发明又一实施例提出一种像素电路的驱动方法,此像素电路包括有机发光二极管、储存电容及驱动晶体管;驱动晶体管用以驱动有机发光二极管发亮,其第一源/漏极电性耦接至储存电容的第一端,第二源/漏极电性耦接至有机发光二极管。其中,驱动方法包括步骤:提供预设电压至储存电容的第一端,并使储存电容的第二端与驱动晶体管的栅极相通;提供数据电压至储存电容的第二端,并使储存电容的第一端透过驱动晶体管及有机发光二极管放电至有机发光二极管的导通电流几乎为零为止,以使储存电容存有一电荷量;以及再提供预设电压至储存电容的第一端以及使储存电容的第二端与驱动晶体管的栅极相通,以致于驱动晶体管根据储存电容上的电荷量产生像素电流驱动有机发光二极管发亮。Yet another embodiment of the present invention provides a method for driving a pixel circuit. The pixel circuit includes an organic light emitting diode, a storage capacitor, and a driving transistor; the driving transistor is used to drive the organic light emitting diode to light up, and its first source/drain is electrically coupled It is connected to the first end of the storage capacitor, and the second source/drain is electrically coupled to the organic light emitting diode. Wherein, the driving method includes the steps of: providing a preset voltage to the first end of the storage capacitor, and making the second end of the storage capacitor communicate with the gate of the driving transistor; providing a data voltage to the second end of the storage capacitor, and making the storage capacitor The first terminal of the organic light emitting diode is discharged through the drive transistor and the organic light emitting diode until the conduction current of the organic light emitting diode is almost zero, so that the storage capacitor stores a charge; and then a preset voltage is provided to the first terminal of the storage capacitor and the The second end of the storage capacitor communicates with the gate of the driving transistor, so that the driving transistor generates pixel current according to the charge on the storage capacitor to drive the OLED to light up.

在本发明的一实施例中,当像素更包括第一开关晶体管及第二开关晶体管,且第一开关晶体管的第一源/漏极电性耦接至预设电压,第一开关晶体管的第二源/漏极电性耦接至储存电容的第一端,第二开关晶体管的第一源/漏极电性耦接至储存电容的第二端,第二开关晶体管的第二源/漏极电性耦接至驱动晶体管的栅极时,前述提供预设电压至储存电容的第一端,并使储存电容的第二端与驱动晶体管的栅极相通的步骤包括:导通第一开关晶体管及第二开关晶体管。In an embodiment of the present invention, when the pixel further includes a first switch transistor and a second switch transistor, and the first source/drain of the first switch transistor is electrically coupled to a predetermined voltage, the first switch transistor of the first switch transistor The two sources/drains are electrically coupled to the first end of the storage capacitor, the first source/drain of the second switch transistor is electrically coupled to the second end of the storage capacitor, and the second source/drain of the second switch transistor When the polarity is electrically coupled to the gate of the drive transistor, the aforementioned step of providing a preset voltage to the first end of the storage capacitor and making the second end of the storage capacitor communicate with the gate of the drive transistor includes: turning on the first switch transistor and the second switch transistor.

在本发明的一实施例中,当像素更包括第三开关晶体管及第四开关晶体管,且第三开关晶体管的第一源/漏极电性耦接至驱动晶体管的第二源/漏极,第三开关晶体管的第二源/漏极电性耦接至驱动晶体管的栅极,第四开关晶体管的第一源/漏极电性耦接至储存电容的第二端,第四开关晶体管的第二源/漏极电性耦接至数据电压时,前述提供数据电压至储存电容的第二端,并使储存电容的第一端透过驱动晶体管及有机发光二极管放电至有机发光二极管的导通电流几乎为零为止,以使储存电容存有电荷量的步骤包括:截止第一开关晶体管及第二开关晶体管,并导通第三开关晶体管及第四开关晶体管。进一步地,前述提供预设电压至储存电容的第一端,并使储存电容的第二端与驱动晶体管的栅极相通的步骤更可包括:截止第三开关晶体管及第四开关晶体管。In an embodiment of the present invention, when the pixel further includes a third switch transistor and a fourth switch transistor, and the first source/drain of the third switch transistor is electrically coupled to the second source/drain of the driving transistor, The second source/drain of the third switch transistor is electrically coupled to the gate of the drive transistor, the first source/drain of the fourth switch transistor is electrically coupled to the second end of the storage capacitor, and the fourth switch transistor When the second source/drain is electrically coupled to the data voltage, the aforementioned data voltage is provided to the second end of the storage capacitor, and the first end of the storage capacitor is discharged to the conduction of the OLED through the driving transistor and the OLED. The step of passing the current until it is almost zero so that the storage capacitor stores the charge includes: turning off the first switch transistor and the second switch transistor, and turning on the third switch transistor and the fourth switch transistor. Further, the aforementioned step of providing a preset voltage to the first end of the storage capacitor and connecting the second end of the storage capacitor to the gate of the driving transistor may further include: turning off the third switch transistor and the fourth switch transistor.

在本发明的一实施例中,前述的第一开关晶体管、第二开关晶体管、第三开关晶体管及第四开关晶体管的导通/截止状态由同一控制信号决定。In an embodiment of the present invention, the on/off states of the aforementioned first switch transistor, second switch transistor, third switch transistor and fourth switch transistor are determined by the same control signal.

在本发明的一实施例中,前述再提供预设电压至储存电容的第一端以及使储存电容的第二端与驱动晶体管的栅极相通,以致于驱动晶体管根据储存电容上的电荷量产生像素电流驱动有机发光二极管的步骤包括:导通第一开关晶体管及第二开关晶体管,并截止第三开关晶体管及第四开关晶体管。In an embodiment of the present invention, the aforementioned provides a predetermined voltage to the first end of the storage capacitor and connects the second end of the storage capacitor to the gate of the driving transistor, so that the driving transistor generates a voltage according to the charge on the storage capacitor. The step of driving the OLED by the pixel current includes: turning on the first switch transistor and the second switch transistor, and turning off the third switch transistor and the fourth switch transistor.

本发明实施例通过对像素的电路结构进行设计,可使得流过有机发光二极管的像素电流的大小相关于数据电压及有机发光二极管的跨压,而与预设电压及驱动晶体管的临界电压无关。因此,本发明实施例提出的像素电路、主动式矩阵有机发光二极管显示器以及像素电路的驱动方法可有效改善面板显示不均匀的问题以及有机发光二极管的材料衰减问题,以提供高质量的显示画面,进而达成本发明的目的。In the embodiment of the present invention, by designing the circuit structure of the pixel, the magnitude of the pixel current flowing through the OLED is related to the data voltage and the voltage across the OLED, but not related to the preset voltage and the threshold voltage of the driving transistor. Therefore, the pixel circuit, the active matrix organic light emitting diode display and the driving method of the pixel circuit proposed in the embodiments of the present invention can effectively improve the problem of panel display unevenness and the problem of material attenuation of organic light emitting diodes, so as to provide high-quality display images, And then reach the purpose of the present invention.

为让本发明的上述和其它目的、特征和优点能更明显易懂,下文特举较佳实施例,并配合所附图式,作详细说明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, preferred embodiments will be described in detail below together with the accompanying drawings.

附图说明Description of drawings

图1绘示出传统像素电路的示意图。FIG. 1 shows a schematic diagram of a conventional pixel circuit.

图2绘示出相关于本发明实施例的主动式矩阵有机发光二极管显示器。FIG. 2 illustrates an active matrix organic light emitting diode display related to an embodiment of the present invention.

图3绘示出相关于本发明实施例的像素电路的驱动方法的时序图。FIG. 3 is a timing diagram of a driving method of a pixel circuit related to an embodiment of the present invention.

附图标号:Figure number:

200:像素电路200: pixel circuit

202:P型驱动晶体管202: P-type drive transistor

204:N型开关晶体管204: N-type switching transistor

210:有机发光二极管210: Organic Light Emitting Diode

Cst:储存电容Cst: storage capacitor

G:栅极G: grid

D:漏极D: Drain

S:源极S: source

Vsg:电容跨压V sg : Capacitive voltage across

SCAN:扫描信号SCAN: scan signal

Vdata:数据电压Vdata: data voltage

Ioled:像素电流I oled : pixel current

OVDD、OVSS:电源电压OVDD, OVSS: supply voltage

100:主动式矩阵有机发光二极管显示器100: Active Matrix Organic Light-Emitting Diode Display

102:数据驱动电路102: Data drive circuit

103:数据线103: data line

104:扫描驱动电路104: Scanning drive circuit

105:扫描线105: scan line

110:有机发光二极管110: Organic Light Emitting Diode

M1:驱动晶体管M1: drive transistor

M2~M5:开关晶体管M2~M5: switching transistors

Vs1g1:电容跨压V s1g1 : Capacitor voltage across

G1~G5:栅极G1~G5: Gate

D1~D5:漏极D1~D5: Drain

S1~S5:源极S1~S5: source

S1:第一阶段S1: first stage

S2:第二阶段S2: the second stage

S3:第三阶段S3: The third stage

L:低电压位准L: low voltage level

H:高电压位准H: high voltage level

具体实施方式Detailed ways

参见图2,其绘示出相关于本发明实施例的一种主动式矩阵有机发光二极管显示器。主动式矩阵有机发光二极管显示器100包括数据驱动电路102、扫描驱动电路104以及多个像素电路P,图2中仅示出一个像素电路P作为举例,但并非用来限制本发明。如图2所示,数据驱动电路102用以提供数据电压Vdata,扫描驱动电路104用以提供扫描信号SCAN;像素电路P包括储存电容Cst、驱动晶体管M1、开关晶体管M2~M5以及有机发光二极管110。驱动晶体管M1用以驱动有机发光二极管110发亮,驱动晶体管M1的源极S 1电性耦接至储存电容Cst的A端,驱动晶体管M1的漏极D1电性耦接至有机发光二极管110的阳极,而有机发光二极管110的阴极电性耦接至电源电压OVSS。开关晶体管M2的栅极G2电性耦接至扫描线105(图2中仅示出一个作为举例,但并非用来限制本发明)以透过扫描线105从扫描驱动电路104接收扫描信号SCAN,开关晶体管M2的源极S2电性耦接至另一电源电压OVDD,开关晶体管M2的漏极D2电性耦接至储存电容Cst的A端。开关晶体管M3的栅极G3电性耦接至扫描线105以透过扫描线105从扫描驱动电路104接收扫描信号SCAN,开关晶体管M3的源极S3电性耦接至储存电容Cst的B端,开关晶体管M3的漏极D3电性耦接至驱动晶体管M1的栅极G1。开关晶体管M4的栅极G4电性耦接至扫描线105以透过扫描线105从扫描驱动电路104接收扫描信号SCAN,开关晶体管M4的源极S4电性耦接至驱动晶体管M1的漏极D1,开关晶体管M4的漏极D4电性耦接至驱动晶体管M1的栅极G1。开关晶体管M5的栅极G5电性耦接至扫描线105以透过扫描线105从扫描驱动电路104接收扫描信号SCAN,开关晶体管M5的源极S5电性耦接至储存电容的B端,开关晶体管M5的漏极D5电性耦接至数据线103(图2中仅示出一个作为举例,但并非用来限制本发明)以透过数据线103从数据驱动电路102接收数据电压Vdata。此外,开关晶体管M2及M3的栅极开启电压(Gate-On Voltage)与开关晶体管M4及M5的栅极开启电压互为反相,例如开关晶体管M2及M3为P型晶体管,而开关晶体管M4及M5为N型晶体管;相应地,开关晶体管M2及M3的导通/截止状态与开关晶体管M4及M5的导通/截止状态相反。Referring to FIG. 2 , it illustrates an active matrix organic light emitting diode display related to an embodiment of the present invention. The active matrix organic light emitting diode display 100 includes a data driving circuit 102 , a scanning driving circuit 104 and a plurality of pixel circuits P, and only one pixel circuit P is shown in FIG. 2 as an example, but not intended to limit the present invention. As shown in FIG. 2, the data driving circuit 102 is used to provide the data voltage Vdata, and the scanning driving circuit 104 is used to provide the scanning signal SCAN; the pixel circuit P includes a storage capacitor Cst, a driving transistor M1, switching transistors M2-M5 and an organic light emitting diode 110 . The driving transistor M1 is used to drive the organic light emitting diode 110 to light up. The source S1 of the driving transistor M1 is electrically coupled to the terminal A of the storage capacitor Cst, and the drain D1 of the driving transistor M1 is electrically coupled to the organic light emitting diode 110. The anode of the organic light emitting diode 110 is electrically coupled to the power supply voltage OVSS. The gate G2 of the switch transistor M2 is electrically coupled to the scan line 105 (only one is shown in FIG. 2 as an example, but not intended to limit the present invention) to receive the scan signal SCAN from the scan driving circuit 104 through the scan line 105 , The source S2 of the switch transistor M2 is electrically coupled to another power supply voltage OVDD, and the drain D2 of the switch transistor M2 is electrically coupled to the terminal A of the storage capacitor Cst. The gate G3 of the switch transistor M3 is electrically coupled to the scan line 105 to receive the scan signal SCAN from the scan driving circuit 104 through the scan line 105, and the source S3 of the switch transistor M3 is electrically coupled to the terminal B of the storage capacitor Cst, The drain D3 of the switching transistor M3 is electrically coupled to the gate G1 of the driving transistor M1. The gate G4 of the switch transistor M4 is electrically coupled to the scan line 105 to receive the scan signal SCAN from the scan driving circuit 104 through the scan line 105, and the source S4 of the switch transistor M4 is electrically coupled to the drain D1 of the drive transistor M1. , the drain D4 of the switching transistor M4 is electrically coupled to the gate G1 of the driving transistor M1. The gate G5 of the switch transistor M5 is electrically coupled to the scan line 105 to receive the scan signal SCAN from the scan drive circuit 104 through the scan line 105, and the source S5 of the switch transistor M5 is electrically coupled to the terminal B of the storage capacitor. The drain D5 of the transistor M5 is electrically coupled to the data line 103 (only one is shown in FIG. 2 as an example, but not intended to limit the present invention) to receive the data voltage Vdata from the data driving circuit 102 through the data line 103 . In addition, the gate-on voltages (Gate-On Voltage) of the switch transistors M2 and M3 and the gate-on voltages of the switch transistors M4 and M5 are opposite to each other. For example, the switch transistors M2 and M3 are P-type transistors, and the switch transistors M4 and M5 are P-type transistors. M5 is an N-type transistor; correspondingly, the on/off states of the switch transistors M2 and M3 are opposite to the on/off states of the switch transistors M4 and M5.

下面将结合图2及图3详细描述主动式矩阵有机发光二极管显示器100的像素电路的驱动方法,其中图3绘示出相关于本发明实施例的像素P的驱动方法的时序图,从图3中可以得知,驱动像素P的过程包括第一阶段S1、第二阶段S2及第三阶段S3。The driving method of the pixel circuit of the active matrix organic light emitting diode display 100 will be described in detail below in conjunction with FIG. 2 and FIG. 3, wherein FIG. It can be known from the figure that the process of driving the pixel P includes a first stage S1 , a second stage S2 and a third stage S3 .

具体地,于像素P的驱动方法的第一阶段S1,扫描驱动电路104提供的扫描信号SCAN为低电压位准L,使得开关晶体管M2及M3导通且开关晶体管M4及M5处于截止状态。如此一来,电源电压OVDD便透过导通的开关晶体管M2使储存电容Cst的A端的电压位准为OVDD,储存电容Cst的A端因开关晶体管M3导通而与驱动晶体管M1的栅极G1相通。Specifically, in the first stage S1 of the driving method of the pixel P, the scan signal SCAN provided by the scan driving circuit 104 is at a low voltage level L, so that the switch transistors M2 and M3 are turned on and the switch transistors M4 and M5 are turned off. In this way, the power supply voltage OVDD makes the voltage level of the terminal A of the storage capacitor Cst be OVDD through the turned-on switching transistor M2, and the terminal A of the storage capacitor Cst is connected to the gate G1 of the driving transistor M1 due to the turning-on of the switching transistor M3. connected.

接着于第二阶段S2,扫描驱动电路104提供的扫描信号SCAN的电压位准转变为使开关晶体管M2及M3截止的高电压位准H,此时开关晶体管M4及M5导通。如此,储存电容Cst的A端便透过驱动晶体管M1的源-漏极S1-D1与有机发光二极管110对电源电压OVSS放电,直到有机发光二极管的导通电流几乎为零为止,此时有机发光二极管110的阳极具有一电压位准Voled(亦即,有机发光二极管110的跨压与电源电压OVSS的和),使得储存电容Cst的A端的电压位准为(Voled+VTH);其中VTH为驱动晶体管M1的临界电压。此电压位准Voled会随着有机发光二极管210的材料衰减特性而变动,即有机发光二极管110操作时间越久,其电压位准Voled会越高。再回到电路上来看,此时数据驱动电路102提供的数据电压Vdata透过导通的开关晶体管M5使储存电容Cst的B端的电压位准为Vdata,以致于储存电容Cst上存储有电荷量(Voled+VTH-Vdata)。Then in the second stage S2, the voltage level of the scan signal SCAN provided by the scan driving circuit 104 changes to a high voltage level H that turns off the switch transistors M2 and M3, and at this time the switch transistors M4 and M5 are turned on. In this way, the terminal A of the storage capacitor Cst discharges the power supply voltage OVSS through the source-drain electrodes S1-D1 of the drive transistor M1 and the OLED 110 until the conduction current of the OLED is almost zero, at which time the organic light emitting diode The anode of the diode 110 has a voltage level V oled (that is, the sum of the voltage across the OLED 110 and the power supply voltage OVSS), so that the voltage level at the terminal A of the storage capacitor Cst is (V oled +V TH ); where V TH is the threshold voltage of the driving transistor M1. The voltage level V oled will vary with the material decay characteristics of the OLED 210 , that is, the longer the operation time of the OLED 110 , the higher the voltage level V oled will be. Looking back at the circuit, at this time, the data voltage Vdata provided by the data driving circuit 102 passes through the turned-on switching transistor M5 to make the voltage level of the B terminal of the storage capacitor Cst be Vdata, so that the storage capacitor Cst has a charge amount ( V oled +V TH -Vdata).

然后于第三阶段S3,扫描驱动电路104提供的扫描信号SCAN的电压位准转变为使开关晶体管M2及M3导通的低电压位准L,此时开关晶体管M4及M5截止。如此一来,驱动晶体管M1便能根据此时储存电容Cst上的电荷量(即电容跨压Vs1g1)产生像素电流Ioled驱动有机发光二极管110产生对应的亮度。此时,储存电容Cst的B端因开关晶体管M3导通而与驱动晶体管M1的栅极G1相通,电源电压OVDD再次透过导通的开关晶体管M2提供至储存电容Cst的A端使得储存电容Cst的A端的电压位准改变为OVDD,且因电容两端电压连续的特性,储存电容Cst的B端的电压位准亦随的增加电压ΔV。此电压ΔV等于A端的电压位准从(Voled+VTH)改变至OVDD的变化量,即ΔV=OVDD-Voled-VTH。故,储存电容Cst的B端的电压位准最终会改变为(Vdata+ΔV),即(Vdata+OVDD-Voled-VTH)。Then in the third stage S3, the voltage level of the scan signal SCAN provided by the scan driving circuit 104 changes to a low voltage level L that turns on the switch transistors M2 and M3, and at this time the switch transistors M4 and M5 are turned off. In this way, the driving transistor M1 can generate the pixel current I oled according to the charge on the storage capacitor Cst (ie, the capacitor cross voltage V s1g1 ) to drive the organic light emitting diode 110 to generate corresponding brightness. At this time, the B terminal of the storage capacitor Cst is connected to the gate G1 of the drive transistor M1 due to the conduction of the switch transistor M3, and the power supply voltage OVDD is supplied to the A terminal of the storage capacitor Cst through the conduction switch transistor M2 again so that the storage capacitor Cst The voltage level of the terminal A of the storage capacitor Cst changes to OVDD, and because of the continuous voltage across the capacitor, the voltage level of the terminal B of the storage capacitor Cst also increases by a voltage ΔV. The voltage ΔV is equal to the variation of the voltage level of terminal A from (V oled +V TH ) to OVDD, that is, ΔV=OVDD−V oled −V TH . Therefore, the voltage level of the terminal B of the storage capacitor Cst will eventually change to (Vdata+ΔV), ie (Vdata+OVDD-V oled -V TH ).

承上述,流过有机发光二极管110的像素电流Ioled=K*(Vs1g1-VTH)2,栅极G1的电压位准即为B端的电压位准(Vdata+OVDD-Voled-VTH),而源极S1的电压位准即为A端的电压位准OVDD,故像素电流Based on the above, the pixel current I oled =K*(V s1g1 -V TH ) 2 flowing through the OLED 110, the voltage level of the gate G1 is the voltage level of the B terminal (Vdata+OVDD-V oled -V TH ), and the voltage level of the source S1 is the voltage level OVDD of the A terminal, so the pixel current

Ioled=K*[(OVDD-Vdata-OVDD+Voled+VTH)-VTH]2 I oled =K*[(OVDD-Vdata-OVDD+V oled +V TH )-V TH ] 2

=K*(Voled-Vdata)2。至此可以得知,于第三阶段S3(亦即显示阶段)中,流过有机发光二极管110的像素电流Ioled的大小仅与电压位准Voled及数据电压Vdata有关,而与临界电压VTH及电源电压OVDD无关;且当有机发光二极管110的阳极上的电压准位Voled因有机发光二极管110操作时间增加而上升时,会提高像素电流Ioled以补偿当有机发光二极管110的亮度下降情况。如此一来,有机发光二极管的材料衰减问题以及因电源电压降(IR-drop)影响及制造工艺对驱动晶体管M1的临界电压的影响而造成的面板显示不均匀的问题可以得到有效改善,从而使得主动式矩阵有机发光二极管显示器100长时间使用下仍能保持较佳的显示质量。=K*(V oled −Vdata) 2 . So far, it can be known that in the third stage S3 (that is, the display stage), the magnitude of the pixel current I oled flowing through the organic light emitting diode 110 is only related to the voltage level V oled and the data voltage Vdata, but not to the threshold voltage V TH It has nothing to do with the power supply voltage OVDD; and when the voltage level V oled on the anode of the OLED 110 rises due to the increase of the operating time of the OLED 110, the pixel current I oled will be increased to compensate for the decrease in the brightness of the OLED 110 . In this way, the problem of material attenuation of the organic light emitting diode and the problem of panel display unevenness caused by the influence of the power supply voltage drop (IR-drop) and the influence of the manufacturing process on the threshold voltage of the driving transistor M1 can be effectively improved, so that The active matrix organic light emitting diode display 100 can still maintain a good display quality after a long time of use.

综上所述,本发明实施例通过对像素的电路结构进行设计,可使得流过有机发光二极管的像素电流的大小相关于数据电压及有机发光二极管的跨压,而与预设电压及驱动晶体管的临界电压无关。因此,本发明实施例提出的像素电路、主动式矩阵有机发光二极管显示器以及像素电路的驱动方法可有效改善面板显示不均匀的问题以及有机发光二极管的材料衰减问题,以提供高质量的显示画面,进而达成本发明的目的。To sum up, the embodiments of the present invention design the circuit structure of the pixel so that the magnitude of the pixel current flowing through the OLED is related to the data voltage and the voltage across the OLED, and is related to the preset voltage and the driving transistor. The critical voltage is irrelevant. Therefore, the pixel circuit, the active matrix organic light emitting diode display and the driving method of the pixel circuit proposed in the embodiments of the present invention can effectively improve the problem of panel display unevenness and the problem of material attenuation of organic light emitting diodes, so as to provide high-quality display images, And then reach the purpose of the present invention.

此外,任何熟悉此技术者还可对本发明上述实施例提出的主动式矩阵发光二极管显示器及像素电路的驱动方法作适当变更,例如适当变更像素电路的电路结构、主动式矩阵有机发光二极管显示器的像素数量、各个晶体管的种类(P型或N型)、将各个晶体管的源极与漏极的电连接关系互换等等。In addition, any person familiar with this technology can also make appropriate changes to the driving method of the active matrix light-emitting diode display and the pixel circuit proposed by the above-mentioned embodiments of the present invention, such as appropriately changing the circuit structure of the pixel circuit, the pixel of the active matrix organic light-emitting diode display, etc. The quantity, the type of each transistor (P-type or N-type), the electrical connection relationship between the source and the drain of each transistor are exchanged, and so on.

虽然本发明已以较佳实施例揭露如上,然其并非用以限定本发明,任何熟悉此技术者,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围当视权利要求所界定者为准。Although the present invention has been disclosed above with preferred embodiments, it is not intended to limit the present invention. Any person familiar with the art may make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.

Claims (8)

1. an image element circuit is characterized in that, described image element circuit comprises:
One Organic Light Emitting Diode;
One storage capacitors comprises one first end and one second end;
One driving transistors, shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to described first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode;
One first switching transistor, the grid of described first switching transistor receives the one scan signal because of the electric property coupling relation, first source/drain electrode of described first switching transistor is electrically coupled to a predeterminated voltage, and second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors;
One second switch transistor, the transistorized grid of described second switch receives described sweep signal because of the electric property coupling relation, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, and the transistorized second source/drain electrode of described second switch is electrically coupled to the grid of described driving transistors;
One the 3rd switching transistor, the grid of described the 3rd switching transistor receives described sweep signal because of the electric property coupling relation, first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, and second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors; And
One the 4th switching transistor, the grid of described the 4th switching transistor receives described sweep signal because of the electric property coupling relation, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, and second source/drain electrode of described the 4th switching transistor receives a data voltage because of the electric property coupling relation;
The conduction and cut-off opposite states of the transistorized conduction and cut-off state of described first switching transistor and described second switch and described the 3rd switching transistor and described the 4th switching transistor.
2. image element circuit as claimed in claim 1 is characterized in that, described first switching transistor and described second switch transistor are the P transistor npn npn, and described the 3rd switching transistor and described the 4th switching transistor are the N transistor npn npn.
3. an active matrix organic LED display is characterized in that, described display comprises:
One data drive circuit;
Scan driving circuit; And
At least one pixel comprises:
One Organic Light Emitting Diode;
One storage capacitors comprises one first end and one second end;
One driving transistors, shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to described first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode;
One first switching transistor, the grid of described first switching transistor sees through the one scan line and is electrically coupled to described scan drive circuit, first source/drain electrode of described first switching transistor is electrically coupled to a predeterminated voltage, and second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors;
One second switch transistor, the transistorized grid of described second switch sees through described sweep trace and is electrically coupled to described scan drive circuit, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, and the transistorized second source/drain electrode of described second switch is electrically coupled to the grid of described driving transistors;
One the 3rd switching transistor, the grid of described the 3rd switching transistor sees through described sweep trace and is electrically coupled to described scan drive circuit, first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, and second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors; And
One the 4th switching transistor, the grid of described the 4th switching transistor sees through described sweep trace and is electrically coupled to described scan drive circuit, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, and second source/drain electrode of described the 4th switching transistor sees through a data line and is electrically coupled to described data drive circuit;
Wherein, the grid cut-in voltage of the transistorized grid cut-in voltage of described first switching transistor and described second switch and described the 3rd switching transistor and described the 4th switching transistor is anti-phase each other.
4. active matrix organic LED display as claimed in claim 3, it is characterized in that, described first switching transistor and described second switch transistor are the P transistor npn npn, and described the 3rd switching transistor and described the 4th switching transistor are the N transistor npn npn.
5. the driving method of an image element circuit, described image element circuit comprises an Organic Light Emitting Diode, a storage capacitors and a driving transistors, described driving transistors is shinny in order to drive described Organic Light Emitting Diode, first source/drain electrode of described driving transistors is electrically coupled to one first end of described storage capacitors, and second source/drain electrode of described driving transistors is electrically coupled to described Organic Light Emitting Diode; Described driving method comprises step:
Described first end of one predeterminated voltage to described storage capacitors is provided, and one second end of described storage capacitors is communicated with the grid of described driving transistors;
Described second end of one data voltage to described storage capacitors is provided, and described first end that makes described storage capacitors see through described driving transistors and described Organic Light Emitting Diode be discharged to the conducting electric current of described Organic Light Emitting Diode almost nil till so that described storage capacitors has a quantity of electric charge; And
Provide described predeterminated voltage to described first end of described storage capacitors and described second end of described storage capacitors is communicated with the described grid of described driving transistors again, to drive described Organic Light Emitting Diode shinny so that described driving transistors produces a pixel current according to the described quantity of electric charge of described storage capacitors;
When described pixel more comprises one first switching transistor and a second switch transistor, and first source/drain electrode of described first switching transistor is electrically coupled to described predeterminated voltage, second source/drain electrode of described first switching transistor is electrically coupled to described first end of described storage capacitors, the transistorized first source/drain electrode of described second switch is electrically coupled to described second end of described storage capacitors, when the transistorized second source/drain electrode of described second switch is electrically coupled to the described grid of described driving transistors, aforementionedly provide described predeterminated voltage, and described second end of described storage capacitors comprised with the step that the grid of described driving transistors communicates to described first end of described storage capacitors:
Described first switching transistor of conducting and described second switch transistor;
When described pixel more comprises one the 3rd switching transistor and one the 4th switching transistor, and first source/drain electrode of described the 3rd switching transistor is electrically coupled to the described second source/drain electrode of described driving transistors, second source/drain electrode of described the 3rd switching transistor is electrically coupled to the described grid of described driving transistors, first source/drain electrode of described the 4th switching transistor is electrically coupled to described second end of described storage capacitors, when second source/drain electrode of described the 4th switching transistor is electrically coupled to described data voltage, aforementioned described second end of described data voltage that provide to described storage capacitors, and described first end that makes described storage capacitors see through described driving transistors and described Organic Light Emitting Diode be discharged to the conducting electric current of described Organic Light Emitting Diode almost nil till comprise so that described storage capacitors has the step of the described quantity of electric charge:
By described first switching transistor and described second switch transistor, and described the 3rd switching transistor of conducting and described the 4th switching transistor.
6. driving method as claimed in claim 5, it is characterized in that, described first end of described predeterminated voltage to described storage capacitors is provided, and described second end of described storage capacitors more comprised with the step that the grid of described driving transistors communicates:
By described the 3rd switching transistor and described the 4th switching transistor.
7. driving method as claimed in claim 5, it is characterized in that the conduction and cut-off state of described first switching transistor, described second switch transistor, described the 3rd switching transistor and described the 4th switching transistor is determined by same control signal.
8. driving method as claimed in claim 5, it is characterized in that, provide described predeterminated voltage to described first end of described storage capacitors and described second end of described storage capacitors is communicated with the described grid of described driving transistors again, drive the shinny step of described Organic Light Emitting Diode and comprise so that described driving transistors produces described pixel current according to the described quantity of electric charge of described storage capacitors:
Described first switching transistor of conducting and described second switch transistor, and by described the 3rd switching transistor and described the 4th switching transistor.
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