CN101656275B - Preparation method of chip of flip chip type multijunction compound solar cell - Google Patents
Preparation method of chip of flip chip type multijunction compound solar cell Download PDFInfo
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- CN101656275B CN101656275B CN2009100182920A CN200910018292A CN101656275B CN 101656275 B CN101656275 B CN 101656275B CN 2009100182920 A CN2009100182920 A CN 2009100182920A CN 200910018292 A CN200910018292 A CN 200910018292A CN 101656275 B CN101656275 B CN 101656275B
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Abstract
The invention relates to a preparation method of a chip of a flip chip type multijunction compound solar cell chip. The method comprises the following steps: adopting vapor phase epitaxy method to prepare the flip chip type multijunction compound solar cell, evaporating the surface of a transferring substrate to prepare a metal electrode with high reflectivity, coating a fenstral phosphor layer on the surface of the transferring substrate, preparing a fenstral thick metal electrode used for bonding on the surface of the transferring substrate and the surface of the bottom cell of the multijunction compound solar cell, bonding the transferring substrate and the bottom cell of the multijunction compound solar cell, contacting the surface of the phosphor layer with the surface of the bottom cell of the multijunction compound solar cell tightly and removing the epitaxial slice substrate. In the preparation method of the chip, phosphor powder is evenly coated on the surface of the bottom cell of the flip chip type solar cell and the coated phosphor powder can transfer partial solar spectrum with the wavelength of more than 1.2 microns to shorter-wavelength spectrum which has higher spectral sensitivity of the solar cell so as to widen the range of the solar spectrum absorbed by the solar cell and greatly increase the photoelectric conversion efficiency of the solar cell.
Description
Technical field
The present invention relates to solar cell chip, the preparation method of a kind of chip of flip chip type multijunction compound solar cell that especially photoelectric conversion efficiency is high.
Background technology
Utilizing solar cell to convert solar energy into electric energy is the hot subject that develops solar energy at present.The material that is used to prepare solar cell mainly contains monocrystalline silicon, polysilicon, amorphous silicon, GaAs, cadmium sulfide, CIS or the like, and every kind of semi-conducting material all has definite band gap width Eg.
The unijunction solar cell of processing with a kind of semi-conducting material can only convert energy in the solar spectrum to electric energy more than or equal to the part photon energy of Eg, thus in the solar spectrum all the utilization of wavelength photons be extremely inadequate.Fig. 1 is a sunlight spectral distribution situation under the AM1.5 condition, can see that from figure sunlight wavelength all has distribution from the hundreds of nanometer to several microns.And solar cell only has higher response near the solar spectrum its band gap width Eg, and lower to the spectral response of other parts.Owing to this reason, solar cell is very insufficient for the utilization of sunlight, and conversion efficiency is lower, particularly has only the solar cell of a pn knot.
From theory, solar cell also can only convert the part sunlight into electric energy.Process for the solar cell opto-electronic conversion; The sunlight that gets into solar cell is absorbed by battery layers, and battery layers converts a part wherein to electric energy, and a part converts heat energy to and makes the solar cell temperature rising in addition; Make photoelectric conversion efficiency descend, influence the use of solar cell.
In order to improve the efficient of solar cell; A technological approaches that the most often adopts is; Several kinds of semiconductor superpositions of different Eg are got up, process many knot cascade solar cells, each sub-battery converts the solar energy of different-waveband to electric energy respectively; Can utilize solar energy more effectively more fully like this, improve photoelectric conversion efficiency of the solar battery greatly.Fig. 2 is typical case's three knot compound solar cell structures, and solar cell mainly comprises battery (the about 1.4eV of energy gap) and GaInP top solar cell (the about 1.9eV of energy gap) among battery (the about 0.67eV of energy gap) at the bottom of the Ge, Ga (In) As.The order of typical case's three knot compound solar cell extensions is battery epitaxial growth top batteries again in the first epitaxial growth, battery epitaxial loayer and substrate lattice coupling in requiring during epitaxial growth, and relatively low to the lattice match requirement of top battery epitaxial loayer and substrate.For three knot compound solar cells; The energy gap of each of optimal three-junction solar battery layer battery is respectively 1.0eV, 1.4eV, 1.9eV; And if the GaInAs battery is designed to 1.0eV and must need increases the In component; Make GaInAs battery epitaxial loayer and substrate lattice not match, the sample quality that extension is come out is relatively poor, does not reach expected effect.The method that addresses this is that at present mainly is the solar cell of design inverted structure; It is battery among GaInP top solar cell and Ga (In) As of first extension lattice match; And then adding battery at the bottom of the more relatively GaInAs of In component, solar cell chip prepares in the process Ge or GaAs substrate desquamation.Fig. 3 is three knot compound solar cells of typical inverted structure, and solar cell chip is prepared into above the new substrate through substrate-transfer, prepares top electrode on top battery and the end battery.But it is,, unfavorable in improving photoelectric conversion efficiency equally for very little in the solar spectrum greater than 1.2 microns partially absorb for three knot compound solar cells of flip chip type.
Summary of the invention
Can not absorb the problem greater than 1.2 microns part solar spectrums for solving the flip chip type solar cell, to improve the photoelectric conversion efficiency of multijunction solar cell chip, the present invention proposes a kind of preparation method of chip of flip chip type multijunction compound solar cell.
The present invention realizes that the technical scheme that above-mentioned purpose adopts is a kind of preparation method of chip of flip chip type multijunction compound solar cell, and its step is following:
1) method of employing vapour phase epitaxy prepares the multijunction compound solar cell of inverted structure, at the epitaxial wafer substrate
Go up first extension top battery, outer again Yanzhong battery, battery at the bottom of the last extension;
2) the surperficial vapor deposition in translate substrate prepares the metal electrode that high reflectance is arranged;
3), be used for the higher spectrum of solar cell spectral sensitivity that is transformed into the short wavelength greater than 1.2 microns part solar spectrums at the above-mentioned latticed phosphor powder layer of surface-coated with metal electrode of high reflectance;
4) the battery surface preparation is useful on the latticed thick metal electrode of bonding at the end of above-mentioned translate substrate surface and multijunction compound solar cell;
5) be in the same place the surface bond of the end battery of the surface of translate substrate and multijunction compound solar cell, the surface of phosphor powder layer closely contacts with the end battery surface of multijunction compound solar cell equally;
6) remove multijunction compound solar cell epitaxial wafer substrate.
The coated fluorescent material of the present invention is a kind ofly to change long wavelength's spectrum the fluorescent material of short wavelength's spectrum into, and the thickness of the fluorescent material of coating is less than 10 microns; Fluorescent material is selected from carbonate fluorescent material, YAG fluorescent material or silicate fluorescent powder; The adhesion solvent is selected from room curing silicon rubber, PEP, polyvinyl butyral resin, transparent dioxygen resin or polyvinyl acetate; The adhesion solvent has high light transmittance, has elasticity in visible-range; Before applying fluorescent material, fluorescent material and the allotment of adhesion solvent mix and stir.High-reflectivity metal electrode material of the present invention is Ag or Al, and latticed thick metal electrode material is selected from Au, Al, Ag, Sn, Ti, AuSn alloy, AuGe alloy, Ni, Pb or PbSn; Latticed thick metal gross thickness is greater than the thickness of phosphor powder layer, but is no more than 0.5 micron.
The invention has the beneficial effects as follows: through prepare in the process surface that evenly is coated in fluorescent material battery at the bottom of the flip chip type solar cell at chip; The fluorescent material that applies can be the higher spectrum of solar cell spectral sensitivity that is transformed into the short wavelength greater than 1.2 microns part solar spectrums; The solar spectrum scope of solar cell absorption is widened like this, can improve the photoelectric conversion efficiency of solar cell greatly.
Description of drawings
Fig. 1 is sunlight spectral distribution (AM1.5);
Fig. 2 is typical case's three knot compound solar cell structures;
Fig. 3 typical case inverted structure three knot compound solar cells;
The picture on surface of translate substrate during Fig. 4 photoetching for the first time;
Translate substrate picture on surface during Fig. 5 photoetching for the second time;
The solar cell chip that Fig. 6 is prepared according to the methods of the invention.
Among the figure: 100. epitaxial wafer substrates; 200. top battery; 300. middle battery; 400. end battery; 500. translate substrate; 600. reflective metals electrode; 700 latticed phosphor powder layers; 800. latticed thick metal electrode.
Embodiment
Below in conjunction with accompanying drawing 3～Fig. 6 and embodiment the present invention is further specified.
A kind of chip of flip chip type multijunction compound solar cell as shown in Figure 6, its preparation method is following:
The first step: the method preparation three knot compound solar cells that adopt vapour phase epitaxy; Elder generation's first extension top battery 200 on epitaxial wafer substrate 100; Outer again Yanzhong battery 300; Battery 400 at the bottom of the last extension forms three of inverted structure and ties compound solar cells, and the flip chip type solar cell epitaxial wafer good to extension cleans;
Second step: translate substrate 500 is cleaned, at the thin higher Ag metal electrode layer 600 of reflectivity of translate substrate 500 surperficial vapor deposition one decks;
The 3rd step: carry out first photoetching process, form the net-like pattern of rule as shown in Figure 4 on translate substrate 500 surfaces, black part is divided into the photoresist that stays; Fluorescent material is YAG fluorescent material, and the adhesion solvent has high light transmittance, has elasticity in visible-range, and the adhesion solvent is a room curing silicon rubber, and YAG fluorescent material and room curing silicon rubber allotment mix and stir; Carry out fluorescent powder coating technique, coated fluorescent material is a kind ofly to change long wavelength's spectrum into the fluorescent material of short wavelength's spectrum, 8 microns of the thickness of the fluorescent material of coating; Carry out the stripping photolithography adhesive process then; The fluorescent material that partly stays coating at the surface such as the white grid among Fig. 4 of translate substrate; Black part is divided into the metal electrode layer 800 that stays, and photoetching process for the second time forms the net-like patterns of rule as shown in Figure 5 on translate substrate 500 surfaces; Black part is divided into the photoresist that stays, and white is metal electrode layer 800; Promptly at the formation one latticed phosphor powder layer 700 on translate substrate 500 surface;
The 4th step: the thick latticed metal electrode layer 800 of vapor deposition on translate substrate surface is connected with the bonding of the end battery surface that is used for translate substrate surface and multijunction compound solar cell; Stripping technology forms latticed metal electrode 800 on the translate substrate surface; The electrode preparation of end battery surface is utilized photoetching, electrode evaporation and the stripping technology mesh electrode that battery surface forms and the translate substrate surface is same the end of at; Latticed thick metal electrode material is Au, and latticed metal electrode layer 800 gross thickness are greater than the thickness of phosphor powder layer, and latticed metal electrode layer 800 gross thickness are 8.4 microns.
The 5th step: bonding technology, at the bottom of the epitaxial wafer be in the same place with translate substrate 500 surface bonds in battery 400 surfaces, and the surface of latticed phosphor powder layer 700 closely contacts with end battery 400 surfaces of multijunction compound solar cell equally;
The 6th step: be connected with the top battery like Fig. 3 three knot compound solar cell epitaxial substrate, as shown in Figure 6, the present invention need peel off the epitaxial wafer substrate 100 of three knot compound solar cells of inverted structure or erosion removal, exposes the top battery; Preparation electrode and antireflective coating on the battery of top; Cutting technique separates each solar cell chip; Detect, accomplish the making of the present invention's three knot compound solar cells.
The flip chip type compound three-junction solar battery chip that utilizes the present invention to prepare is as shown in Figure 6, in the middle of end battery 400 and translate substrate 500 except more than the battery layers phosphor powder layer 700 of one deck mesh shape; Solar irradiation is mapped to above the solar cell chip, is absorbed by solar cell greater than 1.2 microns long wavelengths' light but is transmitted to phosphor powder layer 700; Phosphor powder layer changes long wavelength's light into short wavelength's the light that can be absorbed by solar cell; A part is directly returned by solar cell and is absorbed; Another partly is absorbed by the electrode layer 600 reflected back solar cells of the high reflectance below fluorescence part layer; Therefore of the absorption of flip chip type solar cell can be promoted greatly, thereby the photoelectric conversion efficiency of solar cell can be promoted for long wavelength's solar spectrum.
Claims (8)
1. the preparation method of a chip of flip chip type multijunction compound solar cell, its step is following:
1) method of employing vapour phase epitaxy prepares the multijunction compound solar cell of inverted structure, first extension top battery on the epitaxial wafer substrate, outer again Yanzhong battery, battery at the bottom of the last extension;
2) the surperficial vapor deposition in translate substrate prepares the metal electrode that high reflectance is arranged;
3), be used for the higher spectrum of solar cell spectral sensitivity that is transformed into the short wavelength greater than 1.2 microns part solar spectrums at the above-mentioned latticed phosphor powder layer of surface-coated with metal electrode of high reflectance;
4) the battery surface preparation is useful on the latticed thick metal electrode of bonding at the end of above-mentioned translate substrate surface and multijunction compound solar cell;
5) be in the same place the surface bond of the end battery of the surface of translate substrate and multijunction compound solar cell, the surface of phosphor powder layer closely contacts with the end battery surface of multijunction compound solar cell equally;
6) remove multijunction compound solar cell epitaxial wafer substrate.
2. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 1, it is characterized in that: described fluorescent material is selected from carbonate fluorescent material, YAG fluorescent material or silicate fluorescent powder.
3. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 1 is characterized in that: before applying fluorescent material, fluorescent material mixes with the allotment of adhesion solvent and stirs.
4. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 3, it is characterized in that: described adhesion solvent is selected from room curing silicon rubber, PEP, polyvinyl butyral resin, transparent dioxygen resin or polyvinyl acetate.
5. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 4, it is characterized in that: the adhesion solvent has high light transmittance, has elasticity in visible-range.
6. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 1, it is characterized in that: the thickness of coated fluorescent material is less than 10 microns.
7. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 1, it is characterized in that: the high-reflectivity metal electrode material is Ag or Al.
8. the preparation method of a kind of chip of flip chip type multijunction compound solar cell as claimed in claim 1, it is characterized in that: latticed thick metal electrode material is selected from Au, Al, Ag, Sn, Ti, AuSn alloy, AuGe alloy, Ni, Pb or PbSn.
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| CN2009100182920A CN101656275B (en) | 2009-09-08 | 2009-09-08 | Preparation method of chip of flip chip type multijunction compound solar cell |
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| JP5825582B2 (en) * | 2010-05-25 | 2015-12-02 | コーニンクレッカ フィリップス エヌ ヴェＫｏｎｉｎｋｌｉｊｋｅ Ｐｈｉｌｉｐｓ Ｎ．Ｖ． | Light-emitting solar condensing system |
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| CN102694078A (en) * | 2012-06-16 | 2012-09-26 | 成都聚合科技有限公司 | Process for cleaning high-concentration-ratio photovoltaic photoelectric conversion receiver module |
| CN102800726B (en) * | 2012-09-04 | 2015-04-29 | 天津三安光电有限公司 | Flip solar battery chip and preparation method thereof |
| CN102983203A (en) * | 2012-11-28 | 2013-03-20 | 中国科学院苏州纳米技术与纳米仿生研究所 | Three-junction cascade solar battery and manufacturing method thereof |
| CN103341458A (en) * | 2013-06-15 | 2013-10-09 | 成都聚合科技有限公司 | High-power concentrating photovoltaic conversion receiver circuit board cleaning technology |
| CN103943709A (en) * | 2014-04-24 | 2014-07-23 | 上海祥羚光电科技发展有限公司 | Photovoltaic conversion method capable of improving solar cell conversion efficiency |
| CN104384125A (en) * | 2014-10-08 | 2015-03-04 | 昆山诃德新能源科技有限公司 | High-concentration-ratio solar photovoltaic receiver module cleaning process |
| CN104659155A (en) * | 2015-03-03 | 2015-05-27 | 中国科学院半导体研究所 | Method for adhering thin film solar cell device to another substrate |
| CN105428451A (en) * | 2015-12-08 | 2016-03-23 | 中国电子科技集团公司第十八研究所 | Inverted multi-junction solar cell with omnidirectional reflector and preparation method for inverted multi-junction solar cell |
| FR3047350B1 (en) * | 2016-02-03 | 2018-03-09 | Soitec | ADVANCED SUBSTRATE WITH INTEGRATED MIRROR |
| CN105895719B (en) * | 2016-05-13 | 2017-12-26 | 广东大粤新能源科技股份有限公司 | Solar photovoltaic module |
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| CN1065551A (en) * | 1991-03-07 | 1992-10-21 | 无比太阳能公司 | Method and apparatus for forming contacts |
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