CN101672870B - Manufacturing method of magneto-optic current transducer - Google Patents
Manufacturing method of magneto-optic current transducer Download PDFInfo
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- CN101672870B CN101672870B CN2009101839291A CN200910183929A CN101672870B CN 101672870 B CN101672870 B CN 101672870B CN 2009101839291 A CN2009101839291 A CN 2009101839291A CN 200910183929 A CN200910183929 A CN 200910183929A CN 101672870 B CN101672870 B CN 101672870B
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Abstract
本发明公开了一种磁光电流传感器及其制造方法，包括沿光路设置的光源、起偏器、磁光传感单元、检偏器及方位探测器，其中该磁光传感单元为保护层、永磁薄膜和磁光材料层叠生长结构；制造时，首先制备清洁、干燥的磁光材料，然后在真空条件下对磁光材料生长永磁薄膜，再在永磁薄膜上生长SiN或SiO2薄膜保护层，最后利用永磁机对磁光传感单元的永磁薄膜进行充磁。本发明利用永磁薄膜，使得光路通过的磁场强度大、平行度好，有效增大了偏振光的旋转角，提高了传感器的感应精度。此外，该磁光电流传感器的光路元件少，系统设计更简便，可靠性更高。
The invention discloses a magneto-optical current sensor and a manufacturing method thereof, which includes a light source, a polarizer, a magneto-optical sensing unit, an analyzer and an orientation detector arranged along an optical path, wherein the magneto-optical sensing unit is a protective layer , permanent magnet film and magneto-optical material stacked growth structure; during manufacturing, clean and dry magneto-optical materials are first prepared, then a permanent magnet film is grown on the magneto-optical material under vacuum conditions, and then SiN or SiO 2 is grown on the permanent magnet film Thin film protective layer, and finally a permanent magnet machine is used to magnetize the permanent magnet film of the magneto-optical sensing unit. The invention uses a permanent magnet film to make the magnetic field through which the light path passes has strong intensity and good parallelism, effectively increases the rotation angle of polarized light and improves the sensing accuracy of the sensor. In addition, the magneto-optical current sensor has fewer optical path components, simpler system design, and higher reliability.
Description
Technical field
The present invention relates to a kind of optical current sensor, especially a kind of novel magneto-optic current transducer and manufacture method thereof that is used for the measurement of electric system high-voltage great-current.
Background technology
Optical current mutual inductor (Optical Current Transducer is called for short OCT) is based on Faraday magnetooptical effect, directly or indirectly the device that electric current is tested.Compare with traditional induction current transformer, in the application that high-voltage large current is measured, adopt OCT to have obvious superiority: 1. oil-containing not, no explosion danger; 2. isolate fully with high-tension line, satisfy insulating requirements, safe and reliable to operation; 3. do not contain iron core, no magnetic saturation, ferromagnetic resonance and hysteresis; 4. do not contain AC coil, do not exist the output winding open circuit dangerous, can measure direct current; 5. anti-electromagnetic interference (EMI); 6. the response frequency domain is wide; 7. be convenient to remote sensing and remote measurement; 8. help the raising of integrated automation of transformation stations level; 9. little, in light weight, easy installation of volume etc.Optical current mutual inductor is divided into passive optical current mutual inductor and active type optical current mutual inductor.
(patent No. is the Chinese utility model patent of HUST: ZL98235729.6)-110 kilovolt passive type optical fiber current mutual inductor.A kind of optical current mutual inductor with block optical sensing head, the main body glass ring of its sensing head is with reflecting surface and vertical logical light face of 5 miter angles of symmetry outward, tested current lead passes from main body glass ring center pit, polarized light centers on one week of conductor through the repeatedly total reflection of reflecting surface, polarized light plane of polarization under the action of a magnetic field of tested electric current rotates, thereby measures electric current.And the Chinese utility model patent of Harbin engineering university (patent No. is: ZL200710144590.5)-and a kind of three state polarization detection method of getting rid of optical current mutual inductor neutral line birefringence influence.Can measure light intensity (the horizontal polarization intensity of three polarised directions of elliptically polarized light of optics current sensor system output simultaneously, vertical polarization intensity becomes the data of 45 direction polarization intensity with level), utilize ternary measurement data, calculate the phasic difference information between elliptically polarized light horizontal polarization component and the vertical polarization component, in real time separation detection Faraday effect and linear birefrigence.But, because electric current passes through poor practicability from the optical glass center; And long-time stability are bad, and the character of reflecting surface can change as time passes, cause refractive index to change, the light of reflection more and more a little less than, the precision of measurement and reliability thereof are worse and worse.
And Chinese patent (patent No. is: ZL200420112010.6)-and optical current mutual inductor.Adopting the strip magneto-optic memory technique is that the sensing head of main sensing element places in the solenoid that tested electric current passes through, and with solenoidal parallel axes, the strip magneto-optic memory technique is in the stabilizing magnetic field zone in the solenoid.Because light path is linear, avoided the repeatedly reflections of 45 degree of block sensing head in the prior art, overcome and passed distorted reflector in time and cause reflective light intensity to die down and the shortcoming of loses stability.Optical current mutual inductor can steady in a long-term move, and the magnetic field in the energization solenoid is powerful, and the depth of parallelism of magnetic direction and magneto-optic memory technique is good, and is big by the polarized light rotation angle of strip magneto-optic memory technique, the measuring accuracy height.But adopt strip magneto-optic memory technique cost higher, add that the strip magneto-optic memory technique is positioned at the solenoid center, long-time stability in use is bad.In addition, need add supply power and produce externally-applied magnetic field, power consumption, volume is bigger.
Also have Chinese patent (application number is: 200610060605.5) and U.S. Pat 6756781 mention the light probe that adopts small size magneto-optic memory technique combining optical element to constitute free space.In this scheme, the fixedly direction of magnetization of magneto-optic memory technique of not taking measures, the drift of polarization state will influence the measuring accuracy and the stability of total system.(application number is Chinese patent: 200910056802.3) adopt the magnetooptic recording mode, utilize the photoetching method to obtain permanent magnetic domain, but this complex technical process, energy consumption height, throughput rate is low, practicality is not strong.
Summary of the invention
In view of the deficiency of above-mentioned existing optical current sensor and related art scheme, purpose of the present invention aims to provide a kind of magneto-optic current transducer and manufacture method thereof, to realize the electric current of security monitoring high-tension line and measurement high-tension line.
First purpose of the present invention is achieved by the following technical solution:
A kind of magneto-optic current transducer is characterized in that: comprise the light source, the polarizer, magneto-optic sensing unit, analyzer and the azimuth sounder that are provided with along light path.Wherein: this magneto-optic sensing unit is the stacked growth structure of protective seam, permanent magnetic thin film and magneto-optic memory technique, and described protective seam is towards light source one side, and magneto-optic memory technique is towards analyzer and azimuth sounder one side.This permanent magnetic thin film is a permanent magnetic material, is made of permanent magnetic materials such as neodymium iron boron, SmCo or aluminium nickel cobalts, and film thickness is between 10nm-1cm; This protective seam is SiN or SiO
2Film, film thickness is between 5nm-100nm.
Further, aforementioned a kind of magneto-optic current transducer, wherein this light source is used to provide pointolite or area source; The polarizer can convert light source to linearly polarized light; Protective layer used in preventing that permanent magnetic thin film is oxidized, keep the magnetic of permanent magnetic thin film; Permanent magnetic thin film is used for providing externally-applied magnetic field to magneto-optic memory technique, fixedly the direction of magnetization of magneto-optic memory technique; Magneto-optic memory technique rotates linearly polarized light under the effect of outside magnetic field; Analyzer detects polarized light; Azimuth sounder is used for the light intensity and the phase place of detecting polarization light.
Further, aforementioned a kind of magneto-optic current transducer, wherein each member light source, the polarizer, magneto-optic sensing unit, analyzer and the azimuth sounder of this magneto-optic current transducer are to be provided with along the light path straight line.
Second purpose of the present invention is achieved by the following technical solution:
A kind of manufacture method of magneto-optic current transducer is provided with light source, the polarizer, magneto-optic sensing unit, analyzer and azimuth sounder along light path, it is characterized in that: the magneto-optic memory technique of at first preparation cleaning, drying; Then under vacuum condition to magneto-optic memory technique growth permanent magnetic thin film; SiN or SiO again grow on permanent magnetic thin film
2Thinfilm protective coating; Utilize permanent magnetic motor that the permanent magnetic thin film of magneto-optic sensing unit is magnetized at last.
Further, the manufacture method of aforementioned a kind of magneto-optic current transducer, wherein the growth technique of permanent magnetic thin film is magnetron sputtering or electron beam evaporation.
The magneto-optic current transducer of the present invention's design, the beneficial effect after it is used is presented as:
The present invention realizes that by the coil of existing active type optical current mutual inductor generation magnetic field is changed into by permanent magnetic thin film the magnetic field intensity that light path is passed through is big, and the depth of parallelism is good, has effectively increased the rotation angle of polarized light, has improved the induction precision of sensor.In addition, the light path element of this magneto-optic current transducer is reduced, and system design is easier, and reliability is higher.
For make designed a kind of magneto-optic current transducer of the present invention and method for making thereof clearer, be easier to be understood, below just with one embodiment of the present invention in conjunction with its accompanying drawing, do further detailed elaboration.
Description of drawings
Fig. 1 is the structural representation of the preferred embodiment of the present invention.
The implication of each mark is among the figure:
1-light source, the 2-polarizer, 3-protective seam, 4-permanent magnetic thin film, 5-magneto-optic memory technique, 6-analyzer, 7-azimuth sounder.
Embodiment
On the general principles of structure and function, the present invention is put into magneto-optic memory technique on copper mesh or the molybdenum network folder tool, direct growth one deck permanent magnetic thin film on magneto-optic memory technique, initial magnetization direction by permanent magnetic thin film control magneto-optic memory technique, obtain the original state of polarization zero point in the optical system, by the anglec of rotation and the intensity of azimuth sounder direct detection polarized light, thereby obtain the information of extraneous electric current in real time.
This kind magneto-optic current transducer comprises the light source 1, the polarizer 2, magneto-optic sensing unit, analyzer 6 and the azimuth sounder 7 that are provided with along the light path straight line.Wherein: this magneto-optic sensing unit is protective seam 3, permanent magnetic thin film 4 and magneto-optic memory technique 5 stacked growth structures, and described protective seam 3 is towards light source 1 one sides, and magneto-optic memory technique 5 is towards analyzer 6 and azimuth sounder 7 one sides.This permanent magnetic thin film 4 is a permanent magnetic material, is made of permanent magnetic materials such as neodymium iron boron, SmCo or aluminium nickel cobalts, and film thickness can be between 10nm-1cm; This protective seam 3 is the SiN film, and film thickness can be between 5nm-100nm, and its optimum thickness value is about 30nm.
Core component as this magneto-optic current transducer---magneto-optic sensing unit is the structure by protective seam 3, permanent magnetic thin film 4 and magneto-optic memory technique 5 stacked growths.Its concrete manufacture method is: at first adopt ultrasonic cleaner to clean magneto-optic memory technique 5 and oven dry, magneto-optic memory technique 5 is placed on the anchor clamps that copper mesh or molybdenum net make; Put it into film growth system (can select magnetic control sputtering device for use, also can select the electron beam evaporation system for use) then and vacuumize; When film growth system base vacuum degree is better than 1.0-4.0Pa, 5 to 200-500 ℃ of heating magneto-optic memory techniques, operating air pressure is 0.2-5.0Pa; The growth permanent magnetic thin film also is incubated 1 hour; Be warming up to 550 ℃-800 ℃ then and carry out double tempering; Growth protecting layer SiN film when being cooled to room temperature; Utilize magnet charger that sample is magnetized at last.Magneto-optic sensing unit after magnetizing is placed in the optical system of building in advance, and azimuth sounder 7 measured signals when relatively having or not extraneous current interference draw the angle and the intensity of polarized light rotation, just can calculate extraneous current's intensity according to Amp; When external interference current was cancelled fully, because the effect of permanent magnetic thin film, magneto-optic memory technique was got back to the initial magnetization direction again, and the polarization state of total system light path returns to initial position again.
In addition, in the specific embodiment of above manufacture method, this protective seam 3 also can be selected SiO for use
2, can play protection permanent magnetic thin film 4 equally, prevent the effect of its oxidized loss of excitation
This shows that the detection light path of the photomagnetoelectric flow sensor of the present invention is a linear, and electric current do not need to pass from magneto-optic memory technique, need not the reflection of miter angle in the light path yet, more need not photoetching.This is a kind of more practical, more stable, safer novel optical current sensor design proposal.And used component kind and quantitatively all compare to prior art and reduce in the light path of the present invention, system design is more flexible, convenient, and owing to adopt the project organization of permanent magnetic thin film, the magnetic field intensity that makes light path pass through is big, the depth of parallelism is good, make that thus the anglec of rotation of polarized light is bigger, precision is higher.
Visible in sum a kind of magneto-optic current transducer of the present invention, design is unique and ingenious, easy to use, having overcome the active type optical current mutual inductor technically needs extraneous electric current to produce the shortcoming in magnetic field and the shortcoming of passive optical current mutual inductor poor stability, and the ideal that can be used as optical current sensor is selected.In addition, present technique is in fields such as zero potential monitor, magnetization grating, optical magnetic field sensor, optoisolators, and application prospect is expected equally.
Below only be the introduction of inner characteristic of the present invention being carried out by concrete exemplary applications, the protection domain of inventing is not constituted any limitation.All employing equivalents or equivalence are replaced and the technical scheme of formation, all drop in the rights protection scope of the present invention.
Claims (2)
1. the manufacture method of a magneto-optic current transducer is provided with light source, the polarizer, magneto-optic sensing unit, analyzer and azimuth sounder along light path, it is characterized in that: the magneto-optic memory technique of at first preparation cleaning, drying; Then under vacuum condition to magneto-optic memory technique growth permanent magnetic thin film; SiN or SiO again grow on permanent magnetic thin film
2Thinfilm protective coating; Utilize permanent magnetic motor that the permanent magnetic thin film of magneto-optic sensing unit is magnetized at last; Described magneto-optic current transducer; comprise the light source, the polarizer, magneto-optic sensing unit, analyzer and the azimuth sounder that are provided with along light path; wherein said magneto-optic sensing unit is the stacked growth structure of protective seam, permanent magnetic thin film and magneto-optic memory technique; and described protective seam is towards light source one side, and magneto-optic memory technique is towards analyzer and azimuth sounder one side.
2. the manufacture method of a kind of magneto-optic current transducer according to claim 1, it is characterized in that: the growth technique of described permanent magnetic thin film is magnetron sputtering or electron beam evaporation.
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101806824B (en) * | 2010-03-19 | 2012-01-25 | 浙江大学 | Current sensor based on magneto-optic nonreciprocal MZ interference structure |
| CN102759369A (en) * | 2011-04-29 | 2012-10-31 | 北京世纪德润科技有限公司 | Primary current signal simulator for optical current transformer |
| CN103116057B (en) * | 2013-01-18 | 2015-08-26 | 上海理工大学 | Garnet type photoelectric type current sensor device and preparation method |
| CN103197118A (en) * | 2013-03-26 | 2013-07-10 | 上海理工大学 | Garnet type current sensing device and manufacturing method of garnet module |
| CN103675408A (en) * | 2013-12-11 | 2014-03-26 | 上海理工大学 | Garnet type current sensing device and garnet type current sensing system |
| CN103698583B (en) * | 2014-01-08 | 2016-06-22 | 哈尔滨工业大学 | Thin slice adhesive film type optical current sensor |
| CN103837729B (en) * | 2014-03-21 | 2016-03-30 | 哈尔滨理工大学 | A kind of based on through type film-type optical current mutual inductor |
| CN110045169A (en) * | 2019-04-29 | 2019-07-23 | 上海大学 | A kind of optical current sensor and measuring system of magneto-optic memory technique multi-stage cascade |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756781B2 (en) * | 2001-11-15 | 2004-06-29 | Airak, Inc. | Sensor for optically measuring magnetic fields |
| CN2752926Y (en) * | 2004-11-03 | 2006-01-18 | 郭志忠 | Optical current mutual inductor |
| CN101458403A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Magneto-optical crystal, method for making same and application apparatus of the magneto-optical crystal |
| CN101458312A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Optical fiber magneto-optical detecting device |
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2009
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6756781B2 (en) * | 2001-11-15 | 2004-06-29 | Airak, Inc. | Sensor for optically measuring magnetic fields |
| CN2752926Y (en) * | 2004-11-03 | 2006-01-18 | 郭志忠 | Optical current mutual inductor |
| CN101458403A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Magneto-optical crystal, method for making same and application apparatus of the magneto-optical crystal |
| CN101458312A (en) * | 2009-01-04 | 2009-06-17 | 上海舜宇海逸光电技术有限公司 | Optical fiber magneto-optical detecting device |
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