CN101779300A - Light-emitting device - Google Patents
Light-emitting device Download PDFInfo
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- CN101779300A CN101779300A CN200880103019.1A CN200880103019A CN101779300A CN 101779300 A CN101779300 A CN 101779300A CN 200880103019 A CN200880103019 A CN 200880103019A CN 101779300 A CN101779300 A CN 101779300A
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
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- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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- H10H20/80—Constructional details
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- H10H20/8515—Wavelength conversion means not being in contact with the bodies
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- H10H20/80—Constructional details
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- H10H20/8585—Means for heat extraction or cooling being an interconnection
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Abstract
本发明涉及在被绝缘的至少一对金属衬底或者形成有至少两个封装电极的陶瓷衬底等上设置了氮化镓系上下电极型发光二极管的发光装置。本发明的发光装置，在衬底(12，14)上安装有氮化镓系上下电极型发光二极管(11)。上述氮化镓系上下电极型发光二极管(11)，在衬底(12，14)上与电源连接，且周围被反射体(16)包围。上述反射体(16)用粘接剂粘接到上述衬底(12，14)上。另外，上述反射体(16)设置成荧光体层覆盖开口面。
The present invention relates to a light-emitting device in which gallium nitride-based upper and lower electrode type light-emitting diodes are disposed on at least a pair of insulated metal substrates or a ceramic substrate formed with at least two packaging electrodes. In the light-emitting device of the present invention, gallium nitride-based upper and lower electrode type light-emitting diodes (11) are mounted on substrates (12, 14). The gallium nitride-based upper and lower electrode type light emitting diodes (11) are connected to a power source on the substrates (12, 14), and are surrounded by reflectors (16). The reflector (16) is bonded to the substrate (12, 14) with an adhesive. In addition, the above-mentioned reflector (16) is provided so that the phosphor layer covers the opening surface.
Description
Technical field
The present invention relates in insulated at least one pair of metal substrate or be formed with the light-emitting device that is provided with gallium nitride based upper/lower electrode light-emitting diode at least on the ceramic substrate etc. of two underlayer electrodes.The present invention relates to can be at above-mentioned gallium nitride based upper/lower electrode light-emitting diode upper reaches excessive electric current, considered the heat radiation of the heat that produces at this moment or the thermal stress of the metal parts that causes because of above-mentioned thermal conductance causes flexible etc. light-emitting device.In addition, the present invention relates to and to be connected with scolder by using the metal parts that constitutes by the metal plate-like parts, replacement connects metal wire by thread bonded, prevents to vibrate or the light-emitting device that is made of gallium nitride based upper/lower electrode light-emitting diode of the damage of the luminescent layer that heat causes.And, the present invention relates on the upper surface illuminating part of above-mentioned gallium nitride based upper/lower electrode light-emitting diode, be formed with micro concavo-convex, cover its upper surface without encapsulant, so can efficient shine light-emitting device well from the light of above-mentioned illuminating part.
Background technology
Fig. 6 is the figure that is used for illustrating conventional example, is the example that is provided with the upper/lower electrode light-emitting diode on reflector.In Fig. 6, the lower electrode of upper/lower electrode light-emitting diode 61 is engaged with on the metal substrate 62.The upper electrode of above-mentioned upper/lower electrode light-emitting diode 61 is engaged with on another metal substrate 64 by thread bonded 65, and an above-mentioned metal substrate 62 is insulated parts 63 with another metal substrate 64 and separates.Above-mentioned separated metal substrate 61,64 body 66 that is reflected keeps integratedly.Above-mentioned upper/lower electrode light-emitting diode 61 sealed materials 67 are sealed in the above-mentioned reflection box 66.Above-mentioned encapsulant 67 is filled into the upper surface of above-mentioned reflection box 66, is formed with fluorescent film 68, transparent protective film 69 thereon.
In the light-emitting device of in TOHKEMY 2007-27585 communique, putting down in writing, light-emitting diode is set on substrate, seals above-mentioned light-emitting diode, on above-mentioned encapsulant, luminescent coating is set then with encapsulant.
Therefore be filled in the entire emission frame by the encapsulant that will in above-mentioned conventional example and patent disclosure communique, put down in writing, covered the micro concavo-convex of illuminating part, hinder the light that shines well from above-mentioned illuminating part scattering and efficient.
Shown in Figure 6 having the light-emitting diode of installing on the metal substrate in slit, seal with transparent resin, have intensity and use the high resin of hardness in order to make above-mentioned transparent resin.But there is the big problem of thermal stress that produces from light-emitting diode in the encapsulant that above-mentioned hardness is high.I'm afraid that above-mentioned thermal stress can cause the wiring broken string to the light-emitting diode supply capability.
In addition, light-emitting device shown in Figure 6, encapsulant and fluorescent film, above-mentioned fluorescent film and transparent protective film are bonding mutually with semi-harden state respectively.In the above-mentioned light-emitting device, though encapsulant, fluorescent film, transparent protective film are bonding well respectively, can be when becoming hardening state because contraction producing stress.That is, when above-mentioned contraction, above-mentioned encapsulant is bent.Be accompanied by the bending of above-mentioned encapsulant, above-mentioned fluorescent film is stretched, and produces be full of cracks sometimes, curls or breaks.
Summary of the invention
In order to address the above problem, the object of the present invention is to provide a kind of light-emitting device, make the illuminating part of gallium nitride based upper/lower electrode light-emitting diode have micro concavo-convex, encapsulant is not set, can realize the raising of luminous efficiency in order to shine most light effectively.The object of the present invention is to provide not and can cause the light-emitting device that fluorophor contains the film be full of cracks or curls etc. because of thermal stress.The object of the present invention is to provide good, anti-big electric current of the property produced in batches and thermal stress and keep high-intensity light-emitting device.
Light-emitting device of the present invention is characterized in that, at least by constituting with lower member: the encapsulation with at least one pair of encapsulated electrode on the bottom of reflector and above-mentioned reflector; Gallium nitride based upper/lower electrode light-emitting diode, its between p type gallium nitride semiconductor layers and n type gallium nitride semiconductor layers, have active layer, the top of an above-mentioned semiconductor layer have upper surface illuminating part and partial electrode, the orlop of above-mentioned another semiconductor layer have with above-mentioned encapsulated electrode in a lower electrode that engages; Another metal parts that is connected in the partial electrode on the top of above-mentioned gallium nitride based upper/lower electrode light-emitting diode and the above-mentioned encapsulated electrode; In above-mentioned encapsulated electrode one with the engaging of the partial electrode on the engaging of above-mentioned lower electrode, above-mentioned top and above-mentioned metal parts, above-mentioned metal parts and above-mentioned encapsulated electrode in another engage in the scolder that uses; And near the luminescent coating of the upper surface of reflector, installing, the upper surface illuminating part of gallium nitride based upper/lower electrode light-emitting diode is formed with micro concavo-convex, and does not have encapsulant on the surface thereon.
Light-emitting device of the present invention is characterized in that, above-mentioned encapsulation is by constituting as the separated pair of metal substrate of encapsulated electrode and the reflector that engages with above-mentioned pair of metal substrate.
Light-emitting device of the present invention is characterized in that, above-mentioned encapsulation is made of ceramic substrate that is formed with at least one pair of encapsulated electrode and the reflector that engages with above-mentioned ceramic substrate.
Light-emitting device of the present invention, it is characterized in that, above-mentioned encapsulation by as one metal substrate at least one pair of encapsulated electrode, be formed with in the encapsulated electrode another ceramic substrate and the reflector that engages with above-mentioned metal substrate and above-mentioned ceramic substrate constitute.
Light-emitting device of the present invention is characterized in that, above-mentioned metal parts is the strip metal line of gold, silver, or with the strip metal line of gold and/or silver-colored covered aluminium, copper.
Light-emitting device of the present invention, it is characterized in that, above-mentioned reflector is made of the parts of the pottery of the compound system of alumina series, aluminium oxide and glass etc., utilizes the bonding agent of organic siliconresin system, epoxy resin, polyimide resin system, glass system, solder system to engage with above-mentioned substrate.
Light-emitting device of the present invention is characterized in that, above-mentioned luminescent coating engages with the step that is provided with on the top of above-mentioned reflector.
Light-emitting device of the present invention is characterized in that, above-mentioned luminescent coating is arranged on the frame in the peristome that is installed in above-mentioned reflector.
Light-emitting device of the present invention, it is characterized in that the encapsulated electrode that is provided with a plurality of above-mentioned gallium nitride based upper/lower electrode light-emitting diodes in the bottom of above-mentioned reflector and above-mentioned a plurality of gallium nitride based upper/lower electrode light-emitting diodes are connected and/or engaged in parallel.
In the light-emitting device of the present invention, metal parts that engages with above-mentioned encapsulated electrode by the encapsulation with reflector and at least one pair of encapsulated electrode, gallium nitride based upper/lower electrode light-emitting diode, the electrode of above-mentioned gallium nitride based upper/lower electrode light-emitting diode and near the luminescent coating that is provided with the peristome of reflector constitute.Above-mentioned reflector is made of the cylindrical shell of square, circular, ellipse etc., can reflect the light from the inclined plane and the bottom of inside.In addition, be provided with at least one pair of encapsulated electrode in the bottom of above-mentioned reflector.In the above-mentioned a pair of encapsulated electrode one or another also can be as common electrodes.
Gallium nitride based upper/lower electrode light-emitting diode, between p type gallium nitride semiconductor layers and n type gallium nitride semiconductor layers, has active layer at pars intermedia, have upper surface illuminating part and partial electrode on the top of an above-mentioned semiconductor layer, the orlop of above-mentioned another semiconductor layer have with above-mentioned encapsulated electrode in a lower electrode that engages, from top and side emission light.Metal parts, for example, the strip thin-plate member is connected the partial electrode on the top of above-mentioned gallium nitride based upper/lower electrode light-emitting diode with in the above-mentioned encapsulated electrode another.In the above-mentioned encapsulated electrode one with the partial electrode on the engaging of above-mentioned lower electrode, above-mentioned top and above-mentioned metal parts engage and above-mentioned metal parts utilizes scolder to carry out with the engaging of another in the above-mentioned encapsulated electrode.Luminescent coating is installed near the upper surface of reflector.
In addition, the upper surface illuminating part of above-mentioned gallium nitride based upper/lower electrode light-emitting diode is formed with micro concavo-convex from the teeth outwards.The micro concavo-convex on above-mentioned surface can make the light diffuse reflection, improves luminous efficiency.And, because there is not encapsulant in the upper surface illuminating part of above-mentioned gallium nitride based upper/lower electrode light-emitting diode on the surface at an upper portion thereof,, further improve luminous efficiency so the diffuse reflection of light is shone effectively.
In the light-emitting device of the present invention, above-mentioned encapsulated electrode is made of the pair of metal substrate, utilizes space or insulating element to be separated from each other.The reflector that the utilization of above-mentioned pair of metal substrate is installed at an upper portion thereof engages integratedly.Because above-mentioned separated metal substrate and reflector are with joints such as bonding agents, so can access enough intensity.
In the light-emitting device of the present invention, on ceramic substrate, be formed with at least one pair of above-mentioned encapsulated electrode.A reflector is engaged on the ceramic substrate that is formed with above-mentioned a pair of encapsulated electrode.Because above-mentioned at least one pair of encapsulated electrode and the reflector that engages with above-mentioned encapsulated electrode do not have separated part, so become light-emitting device firm on the structure.
In the light-emitting device of the present invention, constitute on this point different by metal substrate, ceramic substrate and reflector with foregoing invention in above-mentioned encapsulation.At least one pair of encapsulated electrode is made of metal substrate and the encapsulated electrode that forms on ceramic substrate.A reflector engages integratedly with above-mentioned metal substrate and above-mentioned ceramic substrate.
In the light-emitting device of the present invention, above-mentioned metal parts is the band of the strip that is made of gold, silver, perhaps using as the band of strip with gold and/or silver-colored covered aluminium, copper, their alloy.Above-mentioned metal parts bends to shape arbitrarily easily, utilizes the bonding area of solder bonds big, and can improve the wettability of scolder.
In the light-emitting device of the present invention, above-mentioned reflector is made of the parts of pottery of the compound system of alumina series, aluminium oxide and glass etc.Above-mentioned reflector utilizes the bonding agent of organic siliconresin system, epoxy resin, polyimide resin system, glass system, solder system to engage with above-mentioned metal substrate or above-mentioned ceramic substrate, is firmly fixed as light-emitting device.
In the light-emitting device of the present invention, above-mentioned luminescent coating engages with the step that is provided with on the top of reflector, sends ultraviolet light to blue light wavelength from gallium nitride based upper/lower electrode light-emitting diode.Above-mentioned fluorescent membrane is at ultraviolet LED, absorbing ultraviolet ray and sending the fluorophor of blue light and absorb ultraviolet ray and make up to blue light and the fluorophor that sends sodium yellow.In addition, above-mentioned fluorescent membrane, can absorb ultraviolet and send blue light fluorophor, absorb ultraviolet ray to blue light and send the fluorophor of green light and absorb and ultravioletly be used in combination to blue light and the fluorophor that sends red light.
Above-mentioned fluorescent membrane at blue LED, uses and to send the fluorophor of blue light and absorb this blue light and send the fluorophor of sodium yellow.In addition, above-mentioned fluorescent membrane can use the fluorophor that sends blue light, absorbs this blue light and send the fluorophor of green light and absorb this blue light and send the fluorophor of red light.And above-mentioned fluorescent membrane when using yellow fluorophor, by cooperating the fluorophor of a spot of burn red, can improve color rendering (color rendering).
In the light-emitting device of the present invention, above-mentioned luminescent coating is assembled on the frame, and above-mentioned frame is installed near the peristome of above-mentioned reflector.Luminescent coating uses the operation different with the encapsulation that gallium nitride based upper/lower electrode light-emitting diode is installed to make, and packing matcrial not is installed near the peristome of reflector at last.
Light-emitting device of the present invention is characterized in that, is provided with a plurality of gallium nitride based upper/lower electrode light-emitting diodes in the bottom of above-mentioned reflector.Encapsulated electrode is configured to above-mentioned a plurality of gallium nitride based upper/lower electrode light-emitting diode series connection and/or engages in parallel.In the above-mentioned encapsulated electrode one and/or another can be shared.Light-emitting device of the present invention can be from the strong light of encapsulation irradiation.
According to the present invention, because the upper electrode of gallium nitride based upper/lower electrode light-emitting diode is connected with scolder with the strip metal parts of another encapsulated electrode by means of metal tape and so on, so need not seal with encapsulant.Because the micro concavo-convex that forms on the upper surface illuminating part of above-mentioned gallium nitride based upper/lower electrode light-emitting diode covers without encapsulant, so can utilize above-mentioned micro concavo-convex, irradiates light effectively.
According to the present invention, owing to be the light-emitting device that constitutes by pair of metal substrate and/or ceramic substrate, gallium nitride based upper/lower electrode light-emitting diode, metal parts, reflector and the luminescent coating on reflector, installed, so thermal diffusivity is good, can flow through big electric current, and can high brightness ground luminous.
According to the present invention, because luminescent coating is installed on the luminescent coating installing frame in advance with transparent protective film, can only just be installed on the reflector, so become the good light-emitting device of the property produced in batches by chimeric.
According to the present invention, owing to do not use thread bonded etc., can access and not only pass through long-time back reliability height, and the light-emitting device that cost is low, the property produced in batches is good.
According to the present invention, because for example tabular metal parts of the upper electrode of the gallium nitride based upper/lower electrode light-emitting diode that is connected with a metal substrate and another metal substrate utilization is connected, so not only can flow through big electric current, and thermal diffusivity is good, also can access mitigation even produce thermal stress.Especially, among the present invention, when each connecting portion uses scolder, can not apply vibration, can obtain not have the light emitting diode that constitutes by gallium nitride based upper/lower electrode light-emitting diode of defective item junction surface and/or luminescent layer.
According to the present invention, gallium nitride based upper/lower electrode light-emitting diode only by changing the kind that fluorophor contains film, just can easily be transformed into desirable color.
Description of drawings
Fig. 1 (a)～(d) is embodiments of the invention 1, Fig. 1 (a) is used for illustrating the summary section that the state of gallium nitride based upper/lower electrode light-emitting diode has been installed on the pair of metal substrate, Fig. 1 (b) is the profile of luminescent coating installing frame, Fig. 1 (c) is the amplification summary section that the state of light-emitting diode has been installed, and Fig. 1 (d) is the plane graph of light-emitting device.
Fig. 2 (a)～(c) is embodiments of the invention 2, Fig. 2 (a) is used for illustrating the profile that the state of gallium nitride based upper/lower electrode light-emitting diode has been installed on the pair of metal substrate, Fig. 2 (b) is the profile of luminescent coating installing frame, and Fig. 2 (c) is the stereogram of metal parts.
Fig. 3 (a) be embodiments of the invention 3 by metal substrate and have the profile of the light-emitting device that the pottery of encapsulated electrode constitutes, Fig. 3 (b) is above-mentioned amplification profile, Fig. 3 (c) is a plane graph.
Fig. 4 (a) and (b) be the amplification view of the upper face of the electrode in the gallium nitride based upper/lower electrode light-emitting diode of the present invention.
Fig. 5 is used for illustrating the comparative example of example of having measured the luminosity of gallium nitride based upper/lower electrode light-emitting diode (blueness) according to having or not of encapsulant.
Fig. 6 is the figure that is used for illustrating conventional example, is the example that is provided with gallium nitride based upper/lower electrode light-emitting diode on reflector.
Embodiment
Below, describe embodiments of the present invention in detail based on accompanying drawing.
(embodiment 1)
Fig. 1 (a)～(d) is embodiments of the invention 1, Fig. 1 (a) is used for illustrating the summary section that the state of gallium nitride based upper/lower electrode light-emitting diode has been installed on the pair of metal substrate, Fig. 1 (b) is the profile of luminescent coating installing frame, Fig. 1 (c) is the amplification summary section that the state of gallium nitride based upper/lower electrode light-emitting diode has been installed, and Fig. 1 (d) is the plane graph of light-emitting device.Skeleton diagram shown in Fig. 1 (a)～(d), may with actual size than different.In Fig. 1 (a)～(d), the pair of metal substrate 12,14 among the embodiment 1 is made of iron, aluminium or copper or their alloy, carries out gold-platedly and/or silver-colored as required, constitutes encapsulated electrode.Encapsulation is made of reflector 16 and above-mentioned a pair of encapsulated electrode.
Above-mentioned reflector 16 is made of the parts of pottery of for example compound system of alumina series, aluminium oxide and glass etc.In addition, above-mentioned reflector 16 utilizes the bonding agent of organic siliconresin system, epoxy resin, polyimide resin system, glass system, solder to engage with metal substrate or ceramic substrate etc.
In addition, above-mentioned pair of metal substrate 12,14 becomes the state of mutually insulated by means of slit or insulating element 13.Reflector 16 has reflecting surface 161,162, and gallium nitride based upper/lower electrode light-emitting diode 11 and metal parts 15 are installed on metal substrate 12,14 in inside.In addition, the chimeric luminescent coating installing frame 19 that installation luminescent coating 191 grades are arranged in the above-mentioned reflector 16.Above-mentioned luminescent coating installing frame 19 is equipped with above-mentioned luminescent coating 191, clips the transparent organic silicon resin molding 192,193 of above-mentioned luminescent coating 191 from above-below direction.In addition, because above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11 and metal parts 15 packing matcrial not, so and form spatial portion 18 between the luminescent coating 191.
Above-mentioned metal substrate 12,14 for example is foursquare 10mm * 10mm, and the width in the slit 13 between them is 0.5mm.In addition, the size of above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11 is 1.0mm * 1.0mm, thick 0.5mm.
In the above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11, lower electrode 112 (with reference to Fig. 1 (c)) utilizes scolder etc. to join on the above-mentioned metal substrate 12.The upper electrode 111 of above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11 (with reference to Fig. 1 (c)) utilization and above-mentioned same scolder etc. join on the above-mentioned metal substrate 14 across metal parts 15.The above-mentioned joint that utilizes scolder carries out simultaneously by making its (reflow) stove that passes through to reflux.In addition, be formed with micro concavo-convex on the surface of the upper electrode of above-mentioned gallium nitride based upper/lower electrode light-emitting diode, efficient is irradiates light well.
In Fig. 1 (b), the substantially horizontal luminescent coating mounting 19-2 of portion that luminescent coating installing frame 19 is connected with by the ring-type frame 19-1 of portion, in the bottom of the above-mentioned ring-type frame 19-1 of portion, be connected with and be fitted to the inner fitting projection 19-3 of reflector in the inner recesses of reflector 16 with the above-mentioned luminescent coating mounting 19-2 of portion and be connected with the inner fitting projection 19-3 of above-mentioned reflector and the reflector mounting 19-4 of portion that becomes the rear side of the above-mentioned luminescent coating mounting 19-2 of portion constitutes.The above-mentioned luminescent coating mounting 19-2 of portion as required, can install the upper and lower surface of transparent organic silicon resin molding 192,193 with protection luminescent coating 191.
Above-mentioned luminescent coating installing frame 19 can be made in place arbitrarily, and is chimeric with above-mentioned reflector 16, fixing with bonding agent etc.Above-mentioned spatial portion 18 as required, is connected with outside atmosphere by not shown hole that is provided with on above-mentioned luminescent coating installing frame 19 or notch part etc.Because above-mentioned hole or notch part can make the pressure of above-mentioned spatial portion 18 keep constant, on luminescent coating 191 grades, can not chap, break or curl.In addition, by adding desirable material to above-mentioned luminescent coating 191, can be from the light of the desirable color of gallium nitride based upper/lower electrode light-emitting diode 11 irradiations.
In addition, above-mentioned luminescent coating 191 is sneaked into above-mentioned transparent organic silicon resin molding 192,193, can become desirable color to the colour switching of the light of launching from gallium nitride based upper/lower electrode light-emitting diode 11.In addition, if above-mentioned luminescent coating installing frame 19 has multiple luminescent coating 191 with different fluorophor, can tackle the requirement of the light of desirable color immediately.
(embodiment 2)
Fig. 2 (a)～(c) is embodiments of the invention 2, Fig. 2 (a) is used for illustrating the profile that the state of gallium nitride based upper/lower electrode light-emitting diode has been installed on the pair of metal substrate, Fig. 2 (b) is the profile of luminescent coating installing frame, and Fig. 2 (c) is the stereogram of metal parts.In Fig. 2 (a)～(c), be with the difference of embodiment 1, ceramic substrate 12 ' on form two encapsulated electrode 14-1,14-2 of mutually insulated at least, and luminescent coating installing frame 21 is entrenched in the outside of reflector 16.
The substantially horizontal luminescent coating mounting portion 212 that above-mentioned luminescent coating installing frame 21 is connected with by ring-type frame portion 211, in the bottom of above-mentioned ring-type frame portion 211, be connected with above-mentioned luminescent coating mounting portion 212 and mounting to the reflector 16 mounting portion 214 and constitute with the chimeric fitting portion 213 in the outside of above-mentioned reflector 16.Transparent organic silicon resin molding 192,193 is installed, with the top and bottom of protection luminescent coating 191 in above-mentioned luminescent coating mounting portion 212.Reflector 16 inside among Fig. 1 and Fig. 2 are circular, are square on every side, but are not limited to square tubular, also comprise the shape of circle, ellipse, square, rectangle and other distortion.Above-mentioned luminescent coating can not be directly arranged on the above-mentioned reflector 16 by frame yet.
Above-mentioned metal wire tape thickness is 25 μ m, and width is 150 μ m, can be the center increase and decrease with above-mentioned length.Above-mentioned metal tape owing to be made of the metal of strip, so heat conduction is good, can flow through big electric current.In addition, above-mentioned metal tape because reverberation well, thus can not form shadow ground optical efficiency well to external emission.
(embodiment 3)
Fig. 3 (a) be embodiments of the invention 3 by metal substrate and have the profile of the light-emitting device that the pottery of encapsulated electrode constitutes, Fig. 3 (b) is above-mentioned amplification profile, Fig. 3 (c) is a plane graph.In Fig. 3 (a)～(c), in encapsulation, above-mentioned metal substrate 12 and ceramic substrate 12 with encapsulated electrode 121 ' engage by means of reflector 16 and with bonding agent etc.The upper electrode 111 (Fig. 1 (c)) of above-mentioned metal substrate 12 and the lower electrode 112 (Fig. 1 (c)) of gallium nitride based upper/lower electrode light-emitting diode 11, gallium nitride based upper/lower electrode light-emitting diode 11 and above-mentioned metal parts 15, metal parts 15 and ceramic substrate 12 ' encapsulated electrode 121 utilize solder bonds.
Above-mentioned junction surface can be carried out gold-plated and/or silver-colored in advance, to improve the wettability of scolder.Above-mentioned metal substrate 12 and ceramic substrate 12 ' top, on whole, carry out gold-platedly and/or silver-colored, can realize raising, the light reflective of current conduction, this three of wettability at junction surface simultaneously.The through hole 33 of above-mentioned encapsulated electrode 121 by having plated gold and/or silver etc. and lower electrode 122 (ceramic substrate with) are connected.Above-mentioned lower electrode 122 and metal substrate 12 usefulness scolders are welded in the wiring of not shown printed circuit board.
Above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11 for example, has active layer between p type gallium nitride semiconductor layers and n type gallium nitride semiconductor layers.Above-mentioned gallium nitride based upper/lower electrode light-emitting diode has upper surface illuminating part and partial electrode on the top of an above-mentioned semiconductor layer, has the lower electrode that engages with above-mentioned encapsulated electrode at the orlop of another semiconductor layer.
Fig. 4 (a) and Fig. 4 (b) are the amplification views of the upper face of the electrode in the gallium nitride based upper/lower electrode light-emitting diode of the present invention.At Fig. 4 (a) with (b), the illuminating part in the top of above-mentioned gallium nitride based upper/lower electrode light-emitting diode 11 is formed with micro concavo-convex, by flowing through big electric current, can obtain high brightness.
(comparative example)
To conventional example connected the gallium nitride based upper/lower electrode light-emitting diode of metal wire with ultrasonic wave, compare with the of the present invention gallium nitride based upper/lower electrode light-emitting diode that utilizes scolder and metal parts to engage.In the prior embodiment, use the metal wire of two diameter 30 μ m, connected the upper electrode of gallium nitride based upper/lower electrode light-emitting diode and another the thread bonded in the metal substrate with the ultrasonic wave thread bonded,, produced about 10% luminous bad defective item because of ultrasonic vibration.And, when switching on, produced about 4% the scaling loss that causes unusually because of switching on 350mA.In an embodiment of the present invention, in the energising that connects operation and 350mA～500mA, all do not produce defective item.
Fig. 5 is used for illustrating the comparative example of example of having measured the luminosity of gallium nitride based upper/lower electrode light-emitting diode (blueness) according to having or not of encapsulant.In the present embodiment, light-emitting area is engaged with encapsulation by the gallium nitride based upper/lower electrode light-emitting diode of the blue light-emitting of concavo-convex processing, wavelength 450nm, flow through the electric current of 3.2V, 350mA, measured the luminosity of blue light, be 5000mcd～5700mcd.If it as encapsulant, is sealed respectively with the encapsulant of silicon-type elastomeric-type and gel-type, then luminosity has reduced (comparative example) about 600mcd～900mcd.
In addition, cooperated europium in organic siliconresin is yellow fluorophor (IntermatixCorporation system, Y4254,28 weight %, thick 250 μ m) fluorescent membrane that obtains engages with the step on reflector top respectively, utilize the blueness of light-emitting diode and yellow that fluorophor is sent out to send white light, with similarly above-mentioned, flow through the electric current of 3.2V, 350mA, measured the luminosity of white light, embodiment is 25800mcd～26900mcd, and comparative example is 21600mcd～23600mcd.Measured light beam simultaneously, embodiment is 67.6 lumens～74.2 lumens, average 70.5 lumens; The comparative example that has used the elastomeric-type encapsulant is 57.4 lumens～64.0 lumens, average 60 lumens; The comparative example that has used the gel-type encapsulant is 60.2 lumens～63.1 lumens, average 61.5 lumens.The optical beam ratio comparative example of the white light of embodiment has increased by 14.6%～17.5%.In addition, the LHD tester that the mensuration of luminosity uses Japanese Fu Xing system house to make, the integrating photometer that the mensuration of light beam uses LAB SPHERE company to make.
Utilizability on the industry
More than, understand embodiments of the invention in detail, but the invention is not restricted to the foregoing description.In addition, the present invention only otherwise break away from the scope of claims record, can make various design alterations.Present embodiment has illustrated the pair of metal substrate or the encapsulated electrode of insulation, but self-evident, can be to have a plurality of gallium nitride based upper/lower electrode light-emitting diodes and encapsulated electrode etc. and their series connection and/or the light-emitting device that is connected side by side.
The connection solder bonds of the upper/lower electrode of gallium nitride based upper/lower electrode light-emitting diode of the present invention, metal substrate, metal parts etc.Especially preferred solder.Above-mentioned scolder, can use scolder slurry, scolder and scaling powder, Jin-Xi eutectic solder slurry, indium is known or known materials such as eutectic solder.Above-mentioned scolder for example has: Jin Hexi (20%), Jin Hexi (90%), gold and silicon dioxide (3.15%), gold and germanium (12%), also have tin-copper-nickel system, Xi-Yin system, tin-silver-copper system, Xi-Yin-bismuth-indium system, tin-zinc eutectic solder.Gallium nitride based upper/lower electrode light-emitting diode of the present invention with similarly above-mentioned, can use known or known.The luminescent coating that uses among the present invention, gallium nitride based upper/lower electrode light-emitting diode can use known or known.
Claims (9)
1. a light-emitting device is characterized in that, at least by constituting with lower member:
Encapsulation with at least one pair of encapsulated electrode on the bottom of reflector and above-mentioned reflector;
Gallium nitride based upper/lower electrode light-emitting diode, its between p type gallium nitride semiconductor layers and n type gallium nitride semiconductor layers, have active layer, the top of an above-mentioned semiconductor layer have upper surface illuminating part and partial electrode, the orlop of above-mentioned another semiconductor layer have with above-mentioned encapsulated electrode in a lower electrode that engages;
Another metal parts that is connected in the partial electrode on the top of above-mentioned gallium nitride based upper/lower electrode light-emitting diode and the above-mentioned encapsulated electrode;
In above-mentioned encapsulated electrode one with the engaging of the partial electrode on the engaging of above-mentioned lower electrode, above-mentioned top and above-mentioned metal parts, above-mentioned metal parts and above-mentioned encapsulated electrode in another engage in the scolder that uses; And
Near the luminescent coating of the upper surface of reflector, installing, and
The upper surface illuminating part of gallium nitride based upper/lower electrode light-emitting diode is formed with micro concavo-convex, and does not have encapsulant on the surface thereon.
2. light-emitting device as claimed in claim 1 is characterized in that:
Above-mentioned encapsulation is by constituting as the pair of metal substrate of the separation of encapsulated electrode and the reflector that engages with above-mentioned pair of metal substrate.
3. light-emitting device as claimed in claim 1 is characterized in that:
Above-mentioned encapsulation is made of ceramic substrate that is formed with at least one pair of encapsulated electrode and the reflector that engages with above-mentioned ceramic substrate.
4. light-emitting device as claimed in claim 1 is characterized in that:
Above-mentioned encapsulation by as one metal substrate at least one pair of encapsulated electrode, be formed with in the encapsulated electrode another ceramic substrate and the reflector that engages with above-mentioned metal substrate and above-mentioned ceramic substrate constitute.
5. as each described light-emitting device in the claim 1～4, it is characterized in that:
Above-mentioned metal parts is the strip metal line of gold, silver, or with the strip metal line of gold and/or silver-colored covered aluminium, copper.
6. as each described light-emitting device in the claim 1～5, it is characterized in that:
Above-mentioned reflector is made of the parts of the pottery of the compound system of alumina series, aluminium oxide and glass etc., utilizes the bonding agent of organic siliconresin system, epoxy resin, polyimide resin system, glass system, solder system to engage with above-mentioned substrate.
7. as each described light-emitting device in the claim 1～6, it is characterized in that:
Above-mentioned luminescent coating engages with the step that is provided with on the top of above-mentioned reflector.
8. as each described light-emitting device in the claim 1～7, it is characterized in that:
Above-mentioned luminescent coating is arranged on the frame of the peristome that is installed in above-mentioned reflector.
9. as each described light-emitting device in the claim 1～8, it is characterized in that:
The encapsulated electrode that is provided with a plurality of above-mentioned gallium nitride based upper/lower electrode light-emitting diodes in the bottom of above-mentioned reflector and above-mentioned a plurality of gallium nitride based upper/lower electrode light-emitting diodes are connected and/or engaged in parallel.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007181565 | 2007-07-11 | ||
| JP2007-181565 | 2007-07-11 | ||
| PCT/JP2008/058444 WO2009008210A1 (en) | 2007-07-11 | 2008-04-24 | Light-emitting device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101779300A true CN101779300A (en) | 2010-07-14 |
Family
ID=40228394
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200880103019.1A Pending CN101779300A (en) | 2007-07-11 | 2008-04-24 | Light-emitting device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPWO2009008210A1 (en) |
| KR (1) | KR20100028115A (en) |
| CN (1) | CN101779300A (en) |
| TW (1) | TW200908389A (en) |
| WO (1) | WO2009008210A1 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101969058A (en) * | 2010-08-17 | 2011-02-09 | 浙江大学 | Planar LED structure |
| CN102194987A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light emitting device package |
| CN102593311A (en) * | 2011-01-17 | 2012-07-18 | 亚世达科技股份有限公司 | Light source packaging structure, manufacturing method thereof and liquid crystal display |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20120050282A (en) | 2010-11-10 | 2012-05-18 | 삼성엘이디 주식회사 | Light emitting device package and method of manufacturing the same |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3469484B2 (en) * | 1998-12-24 | 2003-11-25 | 株式会社東芝 | Semiconductor light emitting device and method of manufacturing the same |
| JP2002314143A (en) * | 2001-04-09 | 2002-10-25 | Toshiba Corp | Light emitting device |
| JP4780939B2 (en) * | 2004-07-28 | 2011-09-28 | 京セラ株式会社 | Light emitting device |
| JP4608294B2 (en) * | 2004-11-30 | 2011-01-12 | 日亜化学工業株式会社 | RESIN MOLDED BODY, SURFACE MOUNTED LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THEM |
| JP2006287126A (en) * | 2005-04-04 | 2006-10-19 | Toyoda Gosei Co Ltd | LED lamp and method of manufacturing unit plate thereof |
| JP4979896B2 (en) * | 2005-04-25 | 2012-07-18 | パナソニック株式会社 | Light emitting device |
| JP2006332381A (en) * | 2005-05-26 | 2006-12-07 | Matsushita Electric Works Ltd | Light emitting apparatus |
| JP4836230B2 (en) * | 2005-06-17 | 2011-12-14 | 株式会社小糸製作所 | Light emitting device and light source device using the same |
| JP2007005722A (en) * | 2005-06-27 | 2007-01-11 | Toshiba Corp | Envelope for optical semiconductor element and optical semiconductor device using the same |
| JP2007043125A (en) * | 2005-06-30 | 2007-02-15 | Matsushita Electric Works Ltd | Light-emitting device |
-
2008
- 2008-04-24 KR KR1020107001787A patent/KR20100028115A/en not_active Abandoned
- 2008-04-24 CN CN200880103019.1A patent/CN101779300A/en active Pending
- 2008-04-24 WO PCT/JP2008/058444 patent/WO2009008210A1/en active Application Filing
- 2008-04-24 JP JP2009522544A patent/JPWO2009008210A1/en not_active Withdrawn
- 2008-05-06 TW TW097116621A patent/TW200908389A/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102194987A (en) * | 2010-03-02 | 2011-09-21 | 台湾积体电路制造股份有限公司 | Light emitting device package |
| CN102194987B (en) * | 2010-03-02 | 2013-06-12 | 台湾积体电路制造股份有限公司 | Light emitting device packaging components |
| CN101969058A (en) * | 2010-08-17 | 2011-02-09 | 浙江大学 | Planar LED structure |
| CN102593311A (en) * | 2011-01-17 | 2012-07-18 | 亚世达科技股份有限公司 | Light source packaging structure, manufacturing method thereof and liquid crystal display |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20100028115A (en) | 2010-03-11 |
| JPWO2009008210A1 (en) | 2010-09-02 |
| TW200908389A (en) | 2009-02-16 |
| WO2009008210A1 (en) | 2009-01-15 |
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