CN101771112B - Wafer-level light-emitting diode packaging structure with increased luminous efficiency and manufacturing method thereof - Google Patents
Wafer-level light-emitting diode packaging structure with increased luminous efficiency and manufacturing method thereof Download PDFInfo
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- CN101771112B CN101771112B CN2009100017016A CN200910001701A CN101771112B CN 101771112 B CN101771112 B CN 101771112B CN 2009100017016 A CN2009100017016 A CN 2009100017016A CN 200910001701 A CN200910001701 A CN 200910001701A CN 101771112 B CN101771112 B CN 101771112B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 69
- 239000000463 material Substances 0.000 claims abstract description 67
- 230000002093 peripheral effect Effects 0.000 claims abstract description 15
- 238000004020 luminiscence type Methods 0.000 claims description 30
- 238000009413 insulation Methods 0.000 claims description 28
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 24
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 23
- 239000011248 coating agent Substances 0.000 claims description 22
- 238000000576 coating method Methods 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 16
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 14
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 12
- 239000003795 chemical substances by application Substances 0.000 claims description 10
- 238000005260 corrosion Methods 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 9
- 150000002815 nickel Chemical class 0.000 claims description 9
- 238000005520 cutting process Methods 0.000 claims description 6
- 238000009713 electroplating Methods 0.000 claims description 6
- 229920002120 photoresistant polymer Polymers 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 5
- 239000004642 Polyimide Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229920001721 polyimide Polymers 0.000 claims description 4
- 229910000906 Bronze Inorganic materials 0.000 claims description 3
- -1 acryl Chemical group 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 239000010974 bronze Substances 0.000 claims description 3
- 150000001879 copper Chemical class 0.000 claims description 3
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 3
- 239000006071 cream Substances 0.000 description 8
- 239000000084 colloidal system Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 229920005989 resin Polymers 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
- 239000000843 powder Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000741 silica gel Substances 0.000 description 2
- 229910002027 silica gel Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
A wafer level light emitting diode packaging structure for increasing luminous efficiency and a manufacturing method thereof are provided, the structure comprises: the light emitting device comprises a light emitting unit, an insulating unit, two first conductive units and two second conductive units. The light-emitting unit comprises a light-emitting body, a positive conductive layer, a negative conductive layer, and a reflective insulating layer formed between the positive and negative conductive layers, wherein the light-emitting body comprises a bottom material layer and a top material layer. The insulating unit is formed on the peripheral area of the upper surface of the bottom material layer and is positioned above the reflecting insulating layer. One of the first conductive units is formed on part of the positive conductive layer and part of the insulating unit, and the other first conductive unit is formed on part of the negative conductive layer and part of the insulating unit. The at least two second conductive units are respectively formed on the two first conductive units. The invention avoids the short circuit phenomenon between the gallium nitride positive electrode layer and the gallium nitride negative electrode layer by using the insulating unit, thereby increasing the luminous efficiency.
Description
Technical field
The present invention relates to a kind of package structure for LED and preparation method thereof, relate in particular to a kind of wafer LED encapsulating structure that increases luminous efficiency and preparation method thereof.
Background technology
See also shown in Figure 1ly, it is the structural representation of known package structure for LED.By among the above-mentioned figure as can be known, known package structure for LED comprises: 1, two of a luminous body is arranged at positive electrode conducting layer P on this luminous body 1 and negative conducting layer N, respectively and is arranged at reflector 2, and the transparent enclosure colloid 3 that is used to coat this luminous body 1 that dielectric layer R, between this positive electrode conducting layer P and this negative conducting layer N is arranged at the bottom of this luminous body 1.
Moreover this package structure for LED is arranged on the circuit board PCB, and conducts electricity w respectively this positive electrode conducting layer P and this negative conducting layer N are electrically connected at this circuit board PCB by two.In addition, a part of light beam that this luminous body 1 produces directly produces the upwards effect of projection, and another part light beam L that this luminous body 1 is produced passes through the reflection in this reflector 2 to produce the upwards effect of projection.
In addition, under normal situation, the electric current of gallium nitride positive electrode layer GaN-P can directly run (shown in downward arrow) toward the lower end, so can produce required light beam on the contact-making surface of gallium nitride positive electrode layer GaN-P and gallium nitride positive electrode layer GaN-N.Yet, because the thickness of the dielectric layer R of above-mentioned known package structure for LED is too thin, therefore cause the side of this gallium nitride positive electrode layer GaN-P to produce the phenomenon (shown in the arrow under oblique) of short circuit easily with between this gallium nitride positive electrode layer GaN-N, thereby make known package structure for LED can't produce illumination effect.
Therefore, the improving of the above-mentioned technological deficiency of inventor's thoughts, and according to the correlation experience of being engaged in for many years in this respect concentratedly observed and studies it, and cooperates the utilization of scientific principle, and proposes a kind of reasonable in design and effectively improve the present invention of above-mentioned technological deficiency.
Summary of the invention
Technical problem to be solved by this invention, be to provide a kind of wafer LED encapsulating structure that increases luminous efficiency and preparation method thereof, it is by the use of this insulation unit, increasing the thickness of this reflective isolating layer, and make can be as the known short circuit phenomenon that produces between this gallium nitride positive electrode layer and this gallium nitride positive electrode layer.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, a kind of wafer LED encapsulating structure that increases luminous efficiency is provided, and it comprises: a luminescence unit, an insulation unit, at least two first conductive units and at least two second conductive units.Wherein, this luminescence unit has a luminous body, and forms in positive electrode conducting layer, on this luminous body and form in negative conducting layer, on this luminous body and form in reflective isolating layer between this positive electrode conducting layer and this negative conducting layer, and one form in this luminous intrinsic light-emitting zone, and wherein this luminous body has a bottom material layer and and is formed in top layer of material on this bottom material layer.This insulation unit forming is on the peripheral region of this bottom material layer upper surface and be positioned at the top of this reflective isolating layer.One of them first conductive unit form in the part positive electrode conducting layer on and the SI semi-insulation unit on, and another one first conductive unit form in the part negative conducting layer on and the SI semi-insulation unit on.Above-mentioned at least two second conductive units, it is formed separately on above-mentioned two first conductive units.
In order to solve the problems of the technologies described above, according to wherein a kind of scheme of the present invention, a kind of manufacture method that increases the wafer LED encapsulating structure of luminous efficiency is provided, it comprises the following steps: at first, one wafer with a plurality of luminescence units is provided, wherein each luminescence unit has a luminous body, one forms in the positive electrode conducting layer on this luminous body, one forms in the negative conducting layer on this luminous body, one forms in the reflective isolating layer between this positive electrode conducting layer and this negative conducting layer, and one form in this luminous intrinsic light-emitting zone, and this luminous body has a bottom material layer and and is formed in top layer of material on this bottom material layer; Then, remove peripheral part of this top layer of material, to expose the peripheral region of this bottom material layer upper surface; Then, form an insulating barrier on described a plurality of luminescence units.
Next, remove the insulating barrier of a part, to form an insulation unit, wherein this insulation unit has at least two respectively first openings of the negative conducting layer of the positive electrode conducting layer of exposed portions serve and part, and this insulation unit forming is on the peripheral region of this bottom material layer upper surface and be positioned at the top of this reflective isolating layer; Then, form one first conductive layer, to fill above-mentioned at least two first openings and to cover this insulation unit; And then, form a photo anti-corrosion agent material on this first conductive layer; Continue, remove the photo anti-corrosion agent material of a part, to form at least two second openings that lay respectively at this positive electrode conducting layer and this negative conducting layer top; Then, fill at least two second conductive layers respectively in above-mentioned at least two second openings, to form at least two second conductive units; At last, remove remaining photoresist, and remove a part first conductive layer that is positioned at all the other photoresist belows, to form two first conductive units.
Therefore, beneficial effect of the present invention is: be used for avoiding producing short circuit phenomenon between this gallium nitride positive electrode layer and this gallium nitride positive electrode layer by making of this insulation unit, and then make the present invention can increase luminous efficiency.
Reach technology, means and the effect that predetermined purpose is taked in order further to understand the present invention, see also following about detailed description of the present invention and accompanying drawing, believe purpose of the present invention, feature and characteristics, go deep into and concrete understanding when getting one thus, yet accompanying drawing only provides reference and explanation usefulness, is not to be used for the present invention is limited.
Description of drawings
Fig. 1 is the structural representation of known package structure for LED;
Fig. 2 increases by the flow chart of first embodiment of manufacture method of the wafer LED encapsulating structure of luminous efficiency for the present invention;
Fig. 2 A to Fig. 2 K is respectively the making schematic flow sheet of first embodiment of manufacture method that the present invention increases the wafer LED encapsulating structure of luminous efficiency;
Fig. 2 L is that the mode of wafer LED encapsulating structure by tin cream of the increase luminous efficiency of first embodiment of the invention is electrically connected on the circuit board;
Fig. 3 increases by the part flow chart of second embodiment of manufacture method of the wafer LED encapsulating structure of luminous efficiency for the present invention;
The part of second embodiment of manufacture method that Fig. 3 A to Fig. 3 C is respectively the present invention increases the wafer LED encapsulating structure of luminous efficiency is made schematic flow sheet; And
Fig. 3 D is that the mode of wafer LED encapsulating structure by tin cream of the increase luminous efficiency of second embodiment of the invention is electrically connected on the circuit board.
Wherein, description of reference numerals is as follows:
(known)
1 luminous body
The P positive electrode conducting layer
The N negative conducting layer
The R dielectric layer
2 reflector
3 transparent enclosure colloids
The w conduction
The L light beam
The PCB circuit board
GaN-P gallium nitride positive electrode layer
GaN-N gallium nitride positive electrode layer
(first embodiment)
W wafer Za package structure for LED
The luminous body of 1a luminescence unit 10a
The 100a aluminum oxide substrate
101a gallium nitride positive electrode layer
102a gallium nitride positive electrode layer
The Aa light-emitting zone
The Pa positive electrode conducting layer
The anodal conductive region of P1a
The Na negative conducting layer
N1a negative pole conductive region
11a reflective isolating layer
The 110a dielectric layer
The 111a reflector
The Da bottom material layer
The D1a peripheral region
The Ua top layer of material
The luminous body of 1a ' luminescence unit 10a '
101a ' gallium nitride positive electrode layer
102a ' gallium nitride positive electrode layer
Aa ' light-emitting zone
Pa ' positive electrode conducting layer
The anodal conductive region of P1a '
Na ' negative conducting layer
N1a ' negative pole conductive region
Ua ' top layer of material
The 2a insulating barrier
2a ' insulation unit 20a ' first opening
3a first conductive layer
3a ' first conductive unit
The Ra photo anti-corrosion agent material
Ra ' photo anti-corrosion agent material R1a ' second opens
4a second conductive layer
The 5a fluorescence coating
5a ' fluorescence coating
The S polymeric substrate
The PCB circuit board
Ba tin ball
Ba ' tin cream
The La light beam
[second embodiment]
W wafer Zb package structure for LED
The 1b luminescence unit
The Ab light-emitting zone
The C groove
The 5b fluorescence coating
5b ' fluorescence coating
The S polymeric substrate
The PCB circuit board
Bb tin ball
Bb ' tin cream
The Lb light beam
Embodiment
See also Fig. 2, reach shown in Fig. 2 A to Fig. 2 K, first embodiment of the invention provides a kind of manufacture method that increases the wafer LED encapsulating structure of luminous efficiency, and it comprises the following steps:
Step S100 is: please cooperate shown in Fig. 2 and Fig. 2 A, provide one have a plurality of luminescence unit 1a wafer W (only demonstrating one of them the luminescence unit 1a on this wafer W in graphic), wherein each luminescence unit 1a has a luminous body 10a, one forms in the positive electrode conducting layer Pa (for example P type semiconductor material layer) on this luminous body 10a, one forms in the negative conducting layer Na (for example N type semiconductor material layer) on this luminous body 10a, one forms in the reflective isolating layer 11a between this positive electrode conducting layer Pa and this negative conducting layer Na, and a light-emitting zone Aa who forms in this luminous body 10a, and this luminous body 10a has a bottom material layer Da and and is formed in top layer of material Ua on this bottom material layer Da.
In addition, this luminous body 10a has an aluminum oxide substrate 100a, and forms in gallium nitride positive electrode layer 101a on this aluminum oxide substrate 100a, an and gallium nitride positive electrode layer 102a who forms on this gallium nitride positive electrode layer 101a, this positive electrode conducting layer Pa forms on this gallium nitride positive electrode layer 102a in addition, this negative conducting layer Na forms on this gallium nitride positive electrode layer 101a, and this reflective isolating layer 11a forms on this gallium nitride positive electrode layer 101a and between this positive electrode conducting layer Pa, this negative conducting layer Na and this gallium nitride positive electrode layer 102a in addition.Wherein, this bottom material layer Da is this aluminum oxide substrate 100a, and this top layer of material Ua is made up of this gallium nitride positive electrode layer 101a and this gallium nitride positive electrode layer 102a.
In addition, the upper surface of this positive electrode conducting layer Pa has an anodal conductive region P1a, the upper surface of this negative conducting layer Na has a negative pole conductive region N1a, and a part of anodal conductive region P1a that this reflective isolating layer 11a is covered in this positive electrode conducting layer Pa goes up and is covered on a part of negative pole conductive region N1a of this negative conducting layer Na.In addition, this reflective isolating layer 11a is made up of the reflector 111a that a dielectric layer 110a and is formed on this dielectric layer 110a.
Wherein, this dielectric layer 110a forms in that this gallium nitride positive electrode layer 101a goes up and between this positive electrode conducting layer Pa, this negative conducting layer Na and this gallium nitride positive electrode layer 102a, and a part of anodal conductive region P1a that this dielectric layer 110a is covered in this positive electrode conducting layer Pa goes up and is covered on a part of negative pole conductive region N1a of this negative conducting layer Na.In addition, with the first disclosed embodiment, this reflector 111a only forms in the upper surface of the part dielectric layer 110a that is positioned at this gallium nitride positive electrode layer 102a top.
Step S102 is: please cooperate shown in Fig. 2 and Fig. 2 B, remove peripheral part (a part of positive electrode conducting layer Pa and a part of negative conducting layer Na of the top layer of material Ua top that is removed also are removed simultaneously) of this top layer of material Ua, to expose the peripheral region D1a of this bottom material layer Da upper surface.Wherein, then become a top layer of material Ua ' after peripheral part of this top layer of material Ua is removed, it is made up of a gallium nitride positive electrode layer 101a ' and a gallium nitride positive electrode layer 102a ' institute.After part positive electrode conducting layer Pa and a part of negative conducting layer Na are removed, then form the negative conducting layer Na ' that a positive electrode conducting layer Pa ' and with an anodal conductive region P1a ' has a negative pole conductive region N1a ', and this light-emitting zone Aa is cut into light-emitting zone Aa '.
Step S104 is: please cooperate shown in Fig. 2 and Fig. 2 C, form an insulating barrier 2a on described a plurality of luminescence unit 1a ', wherein this insulating barrier 2a can be a polyimides (PolyImide, PI) layer or acryl.
Step S106 is: please cooperate shown in Fig. 2 and Fig. 2 D figure, remove the insulating barrier 2a of a part, to form an insulation unit 2a ', wherein this insulation unit 2a ' has at least two respectively first opening 20a ' of the negative conducting layer Na ' of the positive electrode conducting layer Pa ' of exposed portions serve and part, and this insulation unit 2a ' forms on the peripheral region D1a of this bottom material layer Da upper surface and is positioned at the top of this reflective isolating layer 11a.
Step S108 is: please cooperate shown in Fig. 2 and Fig. 2 E, form one first conductive layer 3a, to fill above-mentioned at least two first opening 20a ' and to cover this insulation unit 2a ', wherein this first conductive layer 3a can be titanium, tungsten, copper or its alloy.
Step S110 is: please cooperate shown in Fig. 2 and Fig. 2 F, form a photo anti-corrosion agent material Ra on this first conductive layer 3a.
Step S112 is: please cooperate shown in Fig. 2 and Fig. 2 G, remove the photo anti-corrosion agent material Ra of a part, lay respectively at second of this positive electrode conducting layer Pa ' and this negative conducting layer Na ' top with at least two of formation and open R1a '.Wherein, the photo anti-corrosion agent material Ra that is removed of an above-mentioned part forms a photo anti-corrosion agent material Ra '.
Step S114 is: please cooperate shown in Fig. 2 and Fig. 2 H, fill at least two second conductive layer 4a respectively in above-mentioned at least two second opening R1a ', to form at least two second conductive units.In addition, with first embodiment, each second conductive unit piles up institute by two conductive metal layer at least mutually by the mode of electroplating and forms; The wherein above-mentioned layer of two conductive metal at least is a nickel dam (Ni) and a gold medal layer (Au) or tin layer (Sn), and should the gold layer or the tin layer form on this nickel dam.
In addition, the different design of foundation is established and is asked, and each second conductive unit piles up institute by at least three layers of conductive metal layer mutually by the mode of electroplating and forms; Wherein above-mentioned at least three layers of conductive metal layer are a bronze medal layer (Cu), a nickel dam (Ni) and a gold medal layer (Au) or tin layer (Sn), and this nickel dam forms on this copper layer, and should the gold layer or the tin layer form on this nickel dam.In other words, so long as second conductive unit that is piled up mutually by two-layer above conductive metal layer is all the scope that the present invention protects.
Step S116 is: please cooperate shown in Fig. 2 and Fig. 2 I, remove remaining photoresist Ra ', and remove a part first conductive layer 3a that is positioned at all the other photoresist belows, to form two first conductive unit 3a '.
Step S118 is: please cooperate shown in Fig. 2 and Fig. 2 J, with the upset of this wafer W, and place on the heat-resisting polymeric substrate S.
Step S120 is: please cooperate shown in Fig. 2 and Fig. 2 J, the fluorescence coating 5a that is shaped is in the bottom of each luminescence unit 1a '.In other words, by mode, this fluorescence coating 5a is formed in the bottom surface of this aluminum oxide substrate 100a with this wafer W upset.In addition, above-mentioned fluorescence coating 5a can be according to different user demands, and are chosen as: mixed the fluorescent colloid (fluorescent resin) that forms with a fluorescent material (fluorescentpowder) or mixed the fluorescent colloid (fluorescent resin) that forms by an epoxy resin (epoxy) with a fluorescent material (fluorescent powder) by a silica gel (silicon).
Step S122 is: please cooperate shown in Fig. 2 and Fig. 2 K, along the X-X line of Fig. 2 J to carry out cutting process, this wafer W is cut into a plurality of package structure for LED Za that are coated with fluorescence coating 5a ', and by at least two tin ball Ba so that each package structure for LED Za is electrically connected on the circuit board PCB, wherein each package structure for LED Za is from the light beam La of this light-emitting zone Aa ' generation by this fluorescence coating 5a ', with the demand of throwing light on.In addition, some light beam that is produced from this light-emitting zone Aa ' (figure does not show) is invested the below, and described a plurality of light beam of investing the below is subjected to the reflection of this positive electrode conducting layer Pa ', this negative conducting layer Na ' and this reflector 111a and produces upwards light projector effect.
Whereby, by above-mentioned Fig. 2 K as can be known, first embodiment of the invention provides a kind of wafer LED encapsulating structure that increases luminous efficiency, and it comprises: a luminescence unit 1a ', an insulation unit 2a ', at least two first conductive unit 3a ' reach at least two second conductive units (at least two second conductive layer 4a).
Wherein, this luminescence unit 1a ' has a luminous body 10a ', and forms in positive electrode conducting layer Pa ', on this luminous body 10a ' and form in negative conducting layer Na ', on this luminous body 10a ' and form in reflective isolating layer 11a between this positive electrode conducting layer Pa ' and this negative conducting layer Na ', and one form in the interior light-emitting zone Aa ' of this luminous body 10a ', and this luminous body 10a ' has a bottom material layer Da and and is formed in top layer of material Ua ' on this bottom material layer Da.
Moreover, this luminous body 10a ' has an aluminum oxide substrate 100a, one forms in the gallium nitride positive electrode layer 101a ' on this aluminum oxide substrate 100a, an and gallium nitride positive electrode layer 102a ' who forms on this gallium nitride positive electrode layer 101a ', this positive electrode conducting layer Pa ' forms on this gallium nitride positive electrode layer 102a ' in addition, this negative conducting layer Na ' forms on this gallium nitride positive electrode layer 101a ', and this reflective isolating layer 11a forms in this gallium nitride positive electrode layer 101a ' and go up and be positioned at this positive electrode conducting layer Pa ' in addition, between this negative conducting layer Na ' and this gallium nitride positive electrode layer 102a '.
In addition, the upper surface of this positive electrode conducting layer Pa ' has an anodal conductive region P1a ', the upper surface of this negative conducting layer Na ' has a negative pole conductive region N1a ', and this reflective isolating layer 11a is covered on a part of anodal conductive region P1a ' of this positive electrode conducting layer Pa ' and reaches on a part of negative pole conductive region N1a ' of this negative conducting layer Na '.In addition, this reflective isolating layer 11a is made up of the reflector 111a that a dielectric layer 110a and is formed on this dielectric layer 110a.In addition, this top layer of material Ua ' is made up of a gallium nitride positive electrode layer 101a ' and a gallium nitride positive electrode layer 102a ' institute.
Wherein, this dielectric layer 110a forms in that this gallium nitride positive electrode layer 101a ' goes up and between this positive electrode conducting layer Pa ', this negative conducting layer Na ' and this gallium nitride positive electrode layer 102a ', and a part of anodal conductive region P1a ' that this dielectric layer 110a is covered in this positive electrode conducting layer Pa ' goes up and is covered on a part of negative pole conductive region N1a ' of this negative conducting layer Na '.In addition, with the first disclosed embodiment, this reflector 111a only forms in the upper surface of the part dielectric layer 110a that is positioned at this gallium nitride positive electrode layer 102a ' top.
In addition, 2a ' peripheral region D1a of forming in this bottom material layer Da upper surface in this insulation unit goes up and is positioned at the top of this reflective isolating layer 11a.One of them first conductive unit 3a ' form in the part positive electrode conducting layer Pa ' on reach on the SI semi-insulation unit 2a ', and the another one first conductive unit 3a ' form in the part negative conducting layer Na ' on reach on the SI semi-insulation unit 2a '.Above-mentioned at least two second conductive units (above-mentioned at least two second conductive layer 4a) are formed separately on above-mentioned two first conductive unit 3a '.In addition, this fluorescence coating 5a ' forms in the bottom of the aluminum oxide substrate 100a of this luminescence unit 1a ', provides white light source with the light beam La that cooperates this light-emitting zone Aa ' to be produced.
See also shown in Fig. 2 L, it is electrically connected on the circuit board for the wafer LED encapsulating structure of the increase luminous efficiency of the first embodiment of the invention mode by tin cream.By among the above-mentioned figure as can be known, the coating by two-layer at least tin cream Ba ' is to be electrically connected at each package structure for LED Za on the one circuit board PCB.
See also Fig. 3, and Fig. 3 A to Fig. 3 C shown in, the difference of second embodiment of the invention and the first embodiment maximum is: in a second embodiment, in this wafer W is overturn, and after placing step on the heat-resisting polymeric substrate S, further comprise:
Step S200 is: please cooperate shown in Fig. 3 and Fig. 3 A, carry out the cutting process first time, this wafer W is cut into a plurality of groove C that are formed between a plurality of luminescence unit 1b.
Step S202 is: please cooperate shown in Fig. 3 and Fig. 3 B, fill fluorescent material (figure does not show) in described a plurality of groove C.In addition, above-mentioned fluorescent material can be according to different user demands, and are chosen as: mixed the fluorescent colloid (fluorescent resin) that forms with a fluorescent material (fluorescent powder) or mixed the fluorescent colloid (fluorescent resin) that forms by an epoxy resin (epoxy) with a fluorescent material (fluorescent powder) by a silica gel (silicon).
Step S204 is: please cooperate shown in Fig. 3 and Fig. 3 B, solidify this fluorescent material, with form a fluorescence coating 5b in the bottom of each luminescence unit 1b and around.
Step S206 is: please cooperate shown in Fig. 3 and Fig. 3 C, along the Y-Y line of Fig. 3 B to carry out the cutting process second time, this wafer W is cut into a plurality of package structure for LED Zb that are coated with fluorescence coating 5b ', and by at least two tin ball Bb so that each package structure for LED Zb is electrically connected on the circuit board PCB, wherein each package structure for LED Zb produces the light beam Lb that passes through this fluorescence coating 5b ' from this light-emitting zone Ab, with the demand of throwing light on.
Whereby, by above-mentioned Fig. 3 C as can be known, second embodiment of the invention provides a kind of wafer LED encapsulating structure that increases luminous efficiency, and the difference of the second embodiment of the invention and the first embodiment maximum is: this fluorescence coating 5b ' form in this luminescence unit 1b the bottom and around, provide white light source with the light beam Lb that cooperates this light-emitting zone Ab to be produced.
See also shown in Fig. 3 D, it is electrically connected on the circuit board for the wafer LED encapsulating structure of the increase luminous efficiency of the second embodiment of the invention mode by tin cream.By among the above-mentioned figure as can be known, the coating by two-layer at least tin cream Bb ' is to be electrically connected at each package structure for LED Zb on the one circuit board PCB.
In sum, the present invention's characteristics of increasing the wafer LED encapsulating structure and preparation method thereof of luminous efficiency are:
1, with first embodiment, this fluorescence coating 5a ' can form in the bottom of the aluminum oxide substrate 100a of this luminescence unit 1a ', provides white light source with the light beam La that cooperates this light-emitting zone Aa ' to be produced.With second embodiment, this fluorescence coating 5b ' form in this luminescence unit 1b the bottom and around, provide white light source with the light beam Lb that cooperates this light-emitting zone Ab to be produced.
2, the present invention need not use as above-mentioned known lead, reflector and packing colloid, so the wafer LED encapsulating structure that the present invention increases luminous efficiency can reduce Production Time and cost greatly when making.
3, the present invention is by the use of this insulation unit, and increasing the thickness of this reflective isolating layer, and make can be as the known short circuit phenomenon that produces between this gallium nitride positive electrode layer and this gallium nitride positive electrode layer.
But; all scopes of the present invention should be as the criterion with following claim; all closing in the embodiment of the spirit variation similar of claim of the present invention with it; all should be contained in the scope of the present invention; any those of ordinary skills in the field of the invention, can think easily and variation or modify all can be encompassed in following protection scope of the present invention.
Claims (18)
1. a wafer LED encapsulating structure that increases luminous efficiency is characterized in that, comprising:
One luminescence unit, it has a luminous body, and forms in positive electrode conducting layer, on this luminous body and form in negative conducting layer, on this luminous body and form in reflective isolating layer between this positive electrode conducting layer and this negative conducting layer, and one form in this luminous intrinsic light-emitting zone, and wherein this luminous body has a bottom material layer and and is formed in top layer of material on this bottom material layer;
One insulation unit, it forms on the peripheral region of this bottom material layer upper surface and is positioned at the top of this reflective isolating layer;
At least two first conductive units, one of them first conductive unit form in the part positive electrode conducting layer on and the SI semi-insulation unit on, and another one first conductive unit form in the part negative conducting layer on and the SI semi-insulation unit on; And
At least two second conductive units, it is formed separately on above-mentioned two first conductive units,
This luminous body has an aluminum oxide substrate, and forms in gallium nitride positive electrode layer on this aluminum oxide substrate, an and gallium nitride positive electrode layer that forms on this gallium nitride positive electrode layer, this positive electrode conducting layer forms on this gallium nitride positive electrode layer in addition, this negative conducting layer forms on this gallium nitride positive electrode layer, and this reflective isolating layer forms on this gallium nitride positive electrode layer and between this positive electrode conducting layer, this negative conducting layer and this gallium nitride positive electrode layer in addition; This bottom material layer is this aluminum oxide substrate, and this top layer of material is made up of this gallium nitride positive electrode layer and this gallium nitride positive electrode layer.
2. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1, it is characterized in that: this reflective isolating layer is made up of the reflector that a dielectric layer and is formed on this dielectric layer, this dielectric layer forms on this gallium nitride positive electrode layer and is positioned at this positive electrode conducting layer, between this negative conducting layer and this gallium nitride positive electrode layer, and this dielectric layer is covered on a part of anodal conductive region of this positive electrode conducting layer and is covered on a part of negative pole conductive region of this negative conducting layer, and this reflector only forms in the upper surface of the part dielectric layer that is positioned at this gallium nitride positive electrode layer top.
3. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1 is characterized in that: this reflective isolating layer is made up of the reflector that a dielectric layer and is formed on this dielectric layer.
4. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1 is characterized in that: this insulation unit is a polyimide layer or acryl.
5. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1, it is characterized in that: the upper surface of this positive electrode conducting layer has an anodal conductive region, the upper surface of this negative conducting layer has a negative pole conductive region, and this reflective isolating layer is covered on a part of anodal conductive region of this positive electrode conducting layer and on a part of negative pole conductive region of this negative conducting layer.
6. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1 is characterized in that: each second conductive unit piles up institute by two conductive metal layer at least mutually by the mode of electroplating and forms; The wherein above-mentioned layer of two conductive metal at least is a nickel dam and a gold medal layer or tin layer, and should the gold layer or the tin layer form on this nickel dam.
7. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1 is characterized in that: each second conductive unit piles up institute by at least three layers of conductive metal layer mutually by the mode of electroplating and forms; Wherein above-mentioned at least three layers of conductive metal layer are a bronze medal layer, a nickel dam and a gold medal layer or tin layer, and this nickel dam forms on this copper layer, and should the gold layer or the tin layer form on this nickel dam.
8. the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 1 is characterized in that, further comprises: a fluorescence coating or that forms in this luminescence unit bottom forms in this luminescence unit bottom and fluorescence coating on every side.
9. a manufacture method that increases the wafer LED encapsulating structure of luminous efficiency is characterized in that, comprises the following steps:
One wafer with a plurality of luminescence units is provided, wherein each luminescence unit has a luminous body, and forms in positive electrode conducting layer, on this luminous body and form in negative conducting layer, on this luminous body and form in reflective isolating layer between this positive electrode conducting layer and this negative conducting layer, and one form in this luminous intrinsic light-emitting zone, and this luminous body has a bottom material layer and and is formed in top layer of material on this bottom material layer;
Remove peripheral part of this top layer of material, to expose the peripheral region of this bottom material layer upper surface;
Form an insulating barrier on described a plurality of luminescence units;
Remove the insulating barrier of a part, to form an insulation unit, wherein this insulation unit has at least two respectively first openings of the negative conducting layer of the positive electrode conducting layer of exposed portions serve and part, and this insulation unit forming is on the peripheral region of this bottom material layer upper surface and be positioned at the top of this reflective isolating layer;
Form one first conductive layer, to fill above-mentioned at least two first openings and to cover this insulation unit;
Form a photo anti-corrosion agent material on this first conductive layer;
Remove the photo anti-corrosion agent material of a part, to form at least two second openings that lay respectively at this positive electrode conducting layer and this negative conducting layer top;
Fill at least two second conductive layers respectively in above-mentioned at least two second openings, to form at least two second conductive units; And
Remove remaining photoresist, and remove a part first conductive layer that is positioned at all the other photoresist belows, to form two first conductive units.
10. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9, it is characterized in that: this luminous body has an aluminum oxide substrate, one forms in the gallium nitride positive electrode layer on this aluminum oxide substrate, an and gallium nitride positive electrode layer that forms on this gallium nitride positive electrode layer, this positive electrode conducting layer forms on this gallium nitride positive electrode layer in addition, this negative conducting layer forms on this gallium nitride positive electrode layer, and this reflective isolating layer forms on this gallium nitride positive electrode layer and is positioned at this positive electrode conducting layer in addition, between this negative conducting layer and this gallium nitride positive electrode layer; This bottom material layer is this aluminum oxide substrate, and this top layer of material is made up of this gallium nitride positive electrode layer and this gallium nitride positive electrode layer.
11. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 10, it is characterized in that: this reflective isolating layer is made up of the reflector that a dielectric layer and is formed on this dielectric layer, this dielectric layer forms on this gallium nitride positive electrode layer and is positioned at this positive electrode conducting layer, between this negative conducting layer and this gallium nitride positive electrode layer, and this dielectric layer is covered on a part of anodal conductive region of this positive electrode conducting layer and is covered on a part of negative pole conductive region of this negative conducting layer, and this reflector only forms in the upper surface of the part dielectric layer that is positioned at this gallium nitride positive electrode layer top.
12. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that: this reflective isolating layer is made up of the reflector that a dielectric layer and is formed on this dielectric layer.
13. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that: this insulating barrier is a polyimide layer or acryl.
14. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9, it is characterized in that: the upper surface of this positive electrode conducting layer has an anodal conductive region, the upper surface of this negative conducting layer has a negative pole conductive region, and this reflective isolating layer is covered on a part of anodal conductive region of this positive electrode conducting layer and on a part of negative pole conductive region of this negative conducting layer.
15. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that: each second conductive unit piles up institute by two conductive metal layer at least mutually by the mode of electroplating and forms; The wherein above-mentioned layer of two conductive metal at least is a nickel dam and a gold medal layer or tin layer, and should the gold layer or the tin layer form on this nickel dam.
16. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that: each second conductive unit piles up institute by at least three layers of conductive metal layer mutually by the mode of electroplating and forms; Wherein above-mentioned at least three layers of conductive metal layer are a bronze medal layer, a nickel dam and a gold medal layer or tin layer, and this nickel dam forms on this copper layer, and should the gold layer or the tin layer form on this nickel dam.
17. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that, after the step of two first conductive units of above-mentioned formation, further comprises the steps:
With the upset of this wafer, and place on the heat-resisting polymeric substrate;
Be shaped a fluorescence coating in the bottom of each luminescence unit; And
Carry out cutting process, so that this wafer is cut into a plurality of package structure for LED.
18. the manufacture method of the wafer LED encapsulating structure of increase luminous efficiency as claimed in claim 9 is characterized in that, after the step of two first conductive units of above-mentioned formation, further comprises the steps:
With the upset of this wafer, and place on the heat-resisting polymeric substrate;
Carry out the cutting process first time, this wafer is cut into a plurality of grooves that are formed between described a plurality of luminescence unit;
Fill fluorescent material in described a plurality of grooves;
Solidify this fluorescent material, with form a fluorescence coating in the bottom of each luminescence unit and around; And
Carry out the cutting process second time, so that this wafer is cut into a plurality of package structure for LED.
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| US9000461B2 (en) * | 2003-07-04 | 2015-04-07 | Epistar Corporation | Optoelectronic element and manufacturing method thereof |
| JP6865217B2 (en) | 2015-10-07 | 2021-04-28 | ルミレッズ ホールディング ベーフェー | Flip-chip SMT LEDs with a variable number of light emitting surfaces |
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| CN1883058A (en) * | 2003-11-19 | 2006-12-20 | 日亚化学工业株式会社 | Semiconductor element and its manufacturing method |
| CN101027795A (en) * | 2004-09-27 | 2007-08-29 | 松下电器产业株式会社 | Semiconductor light emitting element, manufacturing method and mounting method of the same and light emitting device |
| CN101263614A (en) * | 2005-09-13 | 2008-09-10 | 飞利浦拉米尔德斯照明设备有限责任公司 | Interconnect for semiconductor light emitting device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1883058A (en) * | 2003-11-19 | 2006-12-20 | 日亚化学工业株式会社 | Semiconductor element and its manufacturing method |
| CN101027795A (en) * | 2004-09-27 | 2007-08-29 | 松下电器产业株式会社 | Semiconductor light emitting element, manufacturing method and mounting method of the same and light emitting device |
| CN101263614A (en) * | 2005-09-13 | 2008-09-10 | 飞利浦拉米尔德斯照明设备有限责任公司 | Interconnect for semiconductor light emitting device |
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