CN101804526A - A welding material containing diamond particles and its preparation method - Google Patents
A welding material containing diamond particles and its preparation method Download PDFInfo
- Publication number
- CN101804526A CN101804526A CN 201010127960 CN201010127960A CN101804526A CN 101804526 A CN101804526 A CN 101804526A CN 201010127960 CN201010127960 CN 201010127960 CN 201010127960 A CN201010127960 A CN 201010127960A CN 101804526 A CN101804526 A CN 101804526A
- Authority
- CN
- China
- Prior art keywords
- diamond particles
- metal
- coating
- coated
- material containing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000010432 diamond Substances 0.000 title claims abstract description 133
- 229910003460 diamond Inorganic materials 0.000 title claims abstract description 132
- 239000002245 particle Substances 0.000 title claims abstract description 127
- 239000000463 material Substances 0.000 title claims abstract description 104
- 238000003466 welding Methods 0.000 title claims abstract description 37
- 238000002360 preparation method Methods 0.000 title claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims abstract description 73
- 239000002184 metal Substances 0.000 claims abstract description 73
- 239000011248 coating agent Substances 0.000 claims abstract description 63
- 238000000576 coating method Methods 0.000 claims abstract description 63
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 15
- 230000000694 effects Effects 0.000 claims abstract description 13
- 229910000679 solder Inorganic materials 0.000 claims description 52
- 229910052718 tin Inorganic materials 0.000 claims description 12
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 239000007769 metal material Substances 0.000 claims description 9
- 229910052719 titanium Inorganic materials 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 238000009736 wetting Methods 0.000 claims description 9
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- 239000011135 tin Substances 0.000 claims description 8
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- 239000010937 tungsten Substances 0.000 claims description 8
- 239000010410 layer Substances 0.000 claims description 7
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 6
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- 229910052742 iron Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- 238000007738 vacuum evaporation Methods 0.000 claims description 5
- 229910052720 vanadium Inorganic materials 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 239000011701 zinc Substances 0.000 claims description 5
- 229910052726 zirconium Inorganic materials 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 4
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 4
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- 150000001247 metal acetylides Chemical class 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 238000007772 electroless plating Methods 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 2
- QUQFTIVBFKLPCL-UHFFFAOYSA-L copper;2-amino-3-[(2-amino-2-carboxylatoethyl)disulfanyl]propanoate Chemical compound [Cu+2].[O-]C(=O)C(N)CSSCC(N)C([O-])=O QUQFTIVBFKLPCL-UHFFFAOYSA-L 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 239000002210 silicon-based material Substances 0.000 claims description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 1
- 238000005476 soldering Methods 0.000 abstract description 5
- 238000001816 cooling Methods 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract description 4
- 125000004122 cyclic group Chemical group 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- QYEXBYZXHDUPRC-UHFFFAOYSA-N B#[Ti]#B Chemical compound B#[Ti]#B QYEXBYZXHDUPRC-UHFFFAOYSA-N 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 2
- 229910033181 TiB2 Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 239000004917 carbon fiber Substances 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
技术领域technical field
本发明涉及一种含有钻石颗粒的焊接材料及制备方法,尤其是应用于微电子封装及散热结构中含有钻石颗粒的焊接材料。The invention relates to a welding material containing diamond particles and a preparation method, in particular to a welding material containing diamond particles used in microelectronic packaging and heat dissipation structures.
背景技术Background technique
一般电子组件的封装或将电子组件如(LED,CPU,GPU等)结合于金属散热器上,通常需要利用焊接技术使焊接材料作为连接层,将高功率的电子组件产生的热量传到金属散热器进行散热。焊接材料中含有锡,锡的热导率为66.6W/(m·K),远低于铜的401W/(m·K),因此在热传的过程中,低导热率的焊锡层会造成很大的热阻,降低热传效率。The packaging of general electronic components or the combination of electronic components such as (LED, CPU, GPU, etc.) to dissipate heat. The soldering material contains tin, and the thermal conductivity of tin is 66.6W/(m·K), which is much lower than 401W/(m·K) of copper. Therefore, in the process of heat transfer, the solder layer with low thermal conductivity will cause Large thermal resistance reduces heat transfer efficiency.
美国专利US6,365,973,揭示一种填充焊锡材料,包括一焊锡材料内含有多个镀膜填充颗粒,其中该镀膜填充颗粒改变填充焊锡材料的热膨胀系数(coefficient of thermal expansion)。镀膜填充颗粒是由具有低热膨胀系数的材料涂布一层可与焊锡材料产生润湿作用的涂布层所制成;填充颗粒的材料如石墨(graphite)、碳纤维(carbon fiber)、钻石(diamond)、氮化硼(boron nitride)、氮化铝(aluminum nitride)、碳化硅(silicon carbide)、氮化硅(silicon nitride)、氧化锌(zinc oxide)、铝(alumina)、二硼化钛(titanium diboride)和氧化硅(silica)等;涂布层的材料如钴,铜,氧化铜、镍、铁、锡、二氧化锡、锌和其合金等。U.S. Patent No. 6,365,973 discloses a solder filling material, which includes a plurality of coating filling particles in the solder material, wherein the coating filling particles change the coefficient of thermal expansion of the filling solder material. The coating filling particles are made of a material with a low thermal expansion coefficient coated with a coating layer that can produce a wetting effect with the solder material; materials such as graphite (graphite), carbon fiber (carbon fiber), diamond (diamond) ), boron nitride, aluminum nitride, silicon carbide, silicon nitride, zinc oxide, aluminum, titanium diboride ( Titanium diboride) and silicon oxide (silica), etc.; coating materials such as cobalt, copper, copper oxide, nickel, iron, tin, tin dioxide, zinc and their alloys.
上述美国专利揭示的填充焊锡材料虽含有钻石颗粒,可以增加其导热效率,但钻石颗粒若直接涂布一层可与焊锡材料润湿作用的金属材料,钻石无法与金属产生化学键结结合,该金属材料很难牢固附着于钻石颗粒的表面,经过多次循环的升温及降温,因为两者的热膨胀系数差异太大,很容易造成金属材料与钻石颗粒产生脱离,降低焊接强度及增加热阻,使填充焊锡材料失去焊接的功能。Although the solder filling material disclosed in the above-mentioned US patent contains diamond particles, which can increase its thermal conductivity, if the diamond particles are directly coated with a layer of metal material that can wet the solder material, the diamond cannot chemically bond with the metal. It is difficult for the material to be firmly attached to the surface of the diamond particles. After several cycles of heating and cooling, because the difference in thermal expansion coefficient between the two is too large, it is easy to cause the metal material to separate from the diamond particles, reducing the welding strength and increasing the thermal resistance. Filled solder material loses the function of soldering.
发明内容Contents of the invention
为改善已知含有钻石颗粒的焊接材料,使钻石颗粒与焊锡材料的结合更稳固,并藉由选择钻石颗粒的大小及占有的比率,制作适合各种用途的焊接材料,而提出本发明。In order to improve the known solder materials containing diamond particles, make the combination of diamond particles and solder materials more stable, and make solder materials suitable for various purposes by selecting the size and occupancy ratio of diamond particles, and propose the present invention.
一种含有钻石颗粒的焊接材料,包括:一焊锡材料;多个镀膜钻石颗粒,与该焊锡材料相混合;其中该多个镀膜钻石颗粒分别包括:A welding material containing diamond particles, comprising: a solder material; a plurality of coated diamond particles mixed with the solder material; wherein the plurality of coated diamond particles respectively include:
一钻石颗粒,其表面具有一金属碳化物涂层;A diamond particle having a metal carbide coating on its surface;
至少一层金属镀层,结合于该金属碳化物涂层表面;at least one metal coating bonded to the metal carbide coating surface;
其中该金属碳化物涂层用以帮助该钻石颗粒与该金属镀层稳定结合。Wherein the metal carbide coating is used to help the diamond grains to combine stably with the metal coating.
一种含有钻石颗粒的焊接材料的制备方法,包括如下步骤:A preparation method of a welding material containing diamond particles, comprising the steps of:
步骤1;将钻石颗粒以微蒸镀或真空蒸镀或溅射沉积程序涂布一层与钻石颗粒形成碳化物的金属材料,包括有铬、钼、钨、钛、钒、钽、锆或硅材料,然后经过高温程序反应后,上述涂布的金属材料与钻石颗粒的碳反应形成金属碳化物涂层,有CrC,MoC,WC,TiC,VC,TaC,ZrC,SiC。Step 1: The diamond particles are coated with a layer of metal materials that form carbides with the diamond particles by micro-evaporation or vacuum evaporation or sputtering deposition procedures, including chromium, molybdenum, tungsten, titanium, vanadium, tantalum, zirconium or silicon Material, and then after the high-temperature program reaction, the above-mentioned coated metal material reacts with the carbon of the diamond particles to form a metal carbide coating, including CrC, MoC, WC, TiC, VC, TaC, ZrC, SiC.
步骤2;将上述具有金属碳化涂层的钻石颗粒以化学镀或电镀的程序,镀上一层金属镀层形成镀膜钻石颗粒;该金属镀膜层的金属包含但不限于下列材料:金、银、铜、铁、铝、镍、钴、钛、钨、铬、锡、锌或其合金材料。Step 2: The above-mentioned diamond particles with a metal carbide coating are plated with a metal coating to form a coated diamond particle by electroless plating or electroplating; the metal of the metal coating layer includes but is not limited to the following materials: gold, silver, copper , iron, aluminum, nickel, cobalt, titanium, tungsten, chromium, tin, zinc or their alloy materials.
步骤3;将镀膜钻石颗粒与焊锡材料均匀混合形成钻石颗粒的焊接材料;其中镀膜钻石颗粒的金属镀层能够与焊锡材料产生润湿作用以利均匀混合;焊锡材料的材料包含但不限于下列材料:锡、银、铜、铋或铅。Step 3: uniformly mix the coated diamond particles and the solder material to form a diamond particle welding material; wherein the metal coating of the coated diamond particles can produce a wetting effect with the solder material to facilitate uniform mixing; the materials of the solder material include but are not limited to the following materials: Tin, silver, copper, bismuth or lead.
一种含有钻石颗粒的焊接材料的用途,含有镀膜钻石颗粒的焊接材料用于使LED、CPU或GPU电子组件焊接于金属散热器上。The application of a welding material containing diamond particles, the welding material containing coated diamond particles is used to weld LED, CPU or GPU electronic components to metal radiators.
本发明的主要目的,在提供一种含有钻石颗粒的焊接材料,其中的钻石颗粒与润湿作用的金属镀层之间具有一金属碳化物涂层,金属镀层因此可与钻石颗粒与金属焊料稳固结合,使镀膜钻石颗粒可均匀的混合焊锡材料中。The main purpose of the present invention is to provide a welding material containing diamond particles, wherein there is a metal carbide coating between the diamond particles and the metal coating of the wetting effect, so that the metal coating can be firmly combined with the diamond particles and the metal solder , so that the coated diamond particles can be evenly mixed in the solder material.
本发明的另一目的,在提供一种含有钻石颗粒的焊接材料,藉由调整镀膜钻石颗粒的大小及占有的体积比率,制作不同性质的焊接材料,使含有钻石颗粒的焊接材料可适合不同的用途。Another object of the present invention is to provide a welding material containing diamond particles. By adjusting the size and volume ratio of coated diamond particles, welding materials with different properties can be made, so that the welding materials containing diamond particles can be suitable for different applications. use.
本发明的优点为:由于钻石颗粒表面的金属碳化物涂层帮助钻石颗粒与金属镀层稳定结合,较不会因为经过多次循环的升温及降温而产生脱离失去结合作用,使镀膜钻石颗粒可均匀的混合在焊锡材料中;并藉由调整镀膜钻石颗粒的大小及占有的比率,制作不同性质的焊接材料,使含有钻石颗粒的焊接材料可适合不同的用途。The advantages of the present invention are: since the metal carbide coating on the surface of the diamond particle helps the diamond particle to be stably combined with the metal coating, it is less likely to lose its bonding effect due to repeated heating and cooling cycles, so that the coated diamond particle can be uniform mixed in the solder material; and by adjusting the size and occupation ratio of the coated diamond particles, solder materials with different properties are produced, so that the solder materials containing diamond particles can be used for different purposes.
本发明的其它目的、功效,请参阅图及实施例,详细说明如下。For other purposes and functions of the present invention, please refer to the drawings and embodiments, and the details are as follows.
附图说明Description of drawings
当结合附图考虑时,通过参照下面的详细描述,能够更完整更好地理解本发明以及容易得知其中许多伴随的优点,但此处所说明的附图用来提供对本发明的进一步理解,构成本发明的一部分,本发明的示意性实施例及其说明用于解释本发明,并不构成对本发明的不当限定,其中:A more complete and better understanding of the invention, and many of its attendant advantages, will readily be learned by reference to the following detailed description when considered in conjunction with the accompanying drawings, but the accompanying drawings illustrated herein are intended to provide a further understanding of the invention and constitute A part of the present invention, the exemplary embodiment of the present invention and its description are used to explain the present invention, and do not constitute an improper limitation of the present invention, wherein:
图1为本发明含有钻石颗粒的焊接材料的示意图。Fig. 1 is a schematic diagram of the welding material containing diamond particles of the present invention.
图2为本发明镀膜钻石颗粒的示意图。Fig. 2 is a schematic diagram of coated diamond particles of the present invention.
图3为本发明含有钻石颗粒的焊接材料应用例的示意图。Fig. 3 is a schematic diagram of an application example of a welding material containing diamond particles according to the present invention.
主要组件符号说明:Description of main component symbols:
含有钻石颗粒的焊接材料1;焊锡材料11;镀膜钻石颗粒12;钻石颗粒121;金属碳化物涂层122;金属镀层123;电子组件2;金属散热器3。
具体实施方式Detailed ways
参照图1至图3对本发明的实施例进行说明。Embodiments of the present invention will be described with reference to FIGS. 1 to 3 .
如图1、2、3所示,本发明系在焊锡材料11中加入一定体积比例及一定大小的镀膜钻石颗粒12,由于钻石颗粒121的热导率为1200-2000W/(m·K),远大于锡的热导率为66.6W/(m·K),因此可以大幅增加焊接材料1的热导率。但是因为钻石颗粒121与焊锡材料11之间没有润湿作用,所以当焊锡材料11受热融化时,比重较轻的钻石颗粒121会被焊锡材料11中的助焊剂带走,飘浮在焊锡材料11的表面而无法使用,因此需要在钻石颗粒121的表面镀上一层可与焊锡材料11产生润湿作用的金属镀层123。但是,钻石颗粒121的表面无法直接电镀金属镀层123,所以需要先利用微蒸镀或真空蒸镀或溅射沉积,然后经过高温程序反应等方法在钻石颗粒121的表面生成一层金属碳化物涂层122,再于碳化物涂层122表面镀上所需的金属镀层123,才能与焊锡材料11产生润湿作用。As shown in Figures 1, 2, and 3, the present invention adds a certain volume ratio and a certain size of coated
如图1、2、3所示,本发明含有钻石颗粒的焊接材料1,包括一焊锡材料11(solder material)及与其相混合的多个镀膜钻石颗粒12;该镀膜钻石颗粒12包括在钻石颗粒121表面的金属碳化物涂层122表面结合至少一层金属镀层123;藉由钻石颗粒121表面的金属碳化物涂层122帮助钻石颗粒121与金属镀层122稳定结合。金属碳化物涂层122的热膨胀系数介于钻石颗粒121的热膨胀系数与金属镀层123的热膨胀系数之间。As shown in Figures 1, 2, and 3, the present invention contains a
本发明镀膜钻石颗粒12的钻石颗粒121与金属镀层123之间具有缓冲的金属碳化物涂层122,虽经过多次循环的升温及降温,较不会因为钻石颗粒121与金属镀层123两者的热膨胀系数差异太大,而造成金属镀层123与钻石颗粒121产生脱离而失去结合作用,使含有钻石颗粒的焊接材料1具有较稳固的焊接功能。There is a buffered
本发明镀膜钻石颗粒121的体积为焊锡材料11的体积的5%至30%,其中以10%至20%为最佳,当超过30%时,会降低焊接强度。钻石颗粒121的大小为0.001mm(毫米)至0.2mm,其中以0.005至0.02mm为最佳。钻石颗粒121的种类可为高温高压(HTHP)人造钻石。The volume of the coated
如图1、2、3所示,本发明含有钻石颗粒的焊接材料1的制法,包括如下步骤:As shown in Fig. 1,2,3, the preparation method of the
1.将钻石颗粒121以微蒸镀或真空蒸镀或溅射沉积程序涂布一层可与钻石颗粒121形成碳化物的金属材料,如含有铬、钼、钨、钛、钒、钽、锆、硅(Cr,Mo,W,Ti,V,Ta,Zr,Si)等材料,然后经过高温程序反应后,上述涂布的金属材料会与钻石颗粒121的碳反应形成金属碳化物涂层122,如CrC,MoC,WC,TiC,VC,TaC,ZrC,SiC等。1. The
2.将上述具有金属碳化涂层122的钻石颗粒121以化学镀或电镀的程序,镀上一层金属镀层123形成镀膜钻石颗粒12;该金属镀膜层123的金属包含但不限于下列材料:金、银、铜、铁、铝、镍、钴、钛、钨、铬、锡、锌或其合金等材料。2. The above-mentioned
3.将镀膜钻石颗粒12与焊锡材料11均匀混合形成钻石颗粒的焊接材料1;其中镀膜钻石颗粒12的金属镀层123可以与焊锡材料11产生润湿作用以利均匀混合;焊锡材料11的材料包含但不限于下列材料:锡、银、铜、铋或铅等。3. The coated
如图3所示,一种含有钻石颗粒的焊接材料的用途,含有镀膜钻石颗粒的焊接材料用于使LED、CPU或GPU电子组件焊接于金属散热器上。As shown in Figure 3, a use of a welding material containing diamond particles, the welding material containing coated diamond particles is used to weld LED, CPU or GPU electronic components to a metal heat sink.
本发明含有镀膜钻石颗粒的焊接材料1,用以使如LED、CPU、GPU等电子组件2焊接于金属散热器3上;含有镀膜钻石颗粒的焊接材料1具有较佳的导热功能,能将电子组件2产生的热量快速的传导至金属散热器3进行散热作用;且含有钻石颗粒的焊接材料1能稳固的结合电子组件2焊接于金属散热器3。The
本发明含有钻石颗粒的焊接材料,其镀膜钻石颗粒的钻石颗粒与润湿作用的金属镀层之间具有一金属碳化物涂层,金属镀层因此可与钻石颗粒稳固结合,较不会因为经过多次循环的升温及降温而脱离失去结合作用,并使镀膜钻石颗粒可均匀的混合于焊锡材料中;并藉由调整镀膜钻石颗粒的大小及占有的体积比率,制作不同性质的焊接材料,使含有钻石颗粒的焊接材料可适合不同的用途。The welding material containing diamond particles of the present invention has a metal carbide coating between the diamond particles of the coated diamond particles and the metal coating layer of the wetting effect, so that the metal coating layer can be firmly combined with the diamond particles, and it is less likely to be damaged due to multiple passes. The cycle of heating and cooling will break away from the loss of bonding, and make the coated diamond particles evenly mixed in the solder material; and by adjusting the size and volume ratio of the coated diamond particles, solder materials with different properties can be produced. Granular welding materials are available for different purposes.
如上所述,对本发明的实施例进行了详细地说明,但是只要实质上没有脱离本发明的发明点及效果可以有很多的变形,这对本领域的技术人员来说是显而易见的。因此,这样的变形例也全部包含在本发明的保护范围之内。As mentioned above, although the Example of this invention was demonstrated in detail, it is obvious to those skilled in the art that many modifications can be made as long as the inventive point and effect of this invention are not substantially deviated. Therefore, all such modified examples are also included in the protection scope of the present invention.
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010127960 CN101804526A (en) | 2010-03-19 | 2010-03-19 | A welding material containing diamond particles and its preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010127960 CN101804526A (en) | 2010-03-19 | 2010-03-19 | A welding material containing diamond particles and its preparation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101804526A true CN101804526A (en) | 2010-08-18 |
Family
ID=42606566
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010127960 Pending CN101804526A (en) | 2010-03-19 | 2010-03-19 | A welding material containing diamond particles and its preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101804526A (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100286A (en) * | 1985-04-01 | 1986-08-27 | 林增栋 | The technology of diamond surface metallization |
| US4968326A (en) * | 1989-10-10 | 1990-11-06 | Wiand Ronald C | Method of brazing of diamond to substrate |
| US6365973B1 (en) * | 1999-12-07 | 2002-04-02 | Intel Corporation | Filled solder |
| US20030150604A1 (en) * | 2002-02-08 | 2003-08-14 | Koning Paul A. | Polymer with solder pre-coated fillers for thermal interface materials |
-
2010
- 2010-03-19 CN CN 201010127960 patent/CN101804526A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85100286A (en) * | 1985-04-01 | 1986-08-27 | 林增栋 | The technology of diamond surface metallization |
| US4968326A (en) * | 1989-10-10 | 1990-11-06 | Wiand Ronald C | Method of brazing of diamond to substrate |
| US6365973B1 (en) * | 1999-12-07 | 2002-04-02 | Intel Corporation | Filled solder |
| US20030150604A1 (en) * | 2002-02-08 | 2003-08-14 | Koning Paul A. | Polymer with solder pre-coated fillers for thermal interface materials |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8531026B2 (en) | Diamond particle mololayer heat spreaders and associated methods | |
| US7173334B2 (en) | Diamond composite heat spreader and associated methods | |
| EP1477467B1 (en) | Composite material having high thermal conductivity and low thermal expansion coefficient, and heat-dissipating substrate | |
| US7531020B2 (en) | Heat sink made from diamond-copper composite material containing boron, and method of producing a heat sink | |
| CN100543103C (en) | Thermal interface material and preparation method thereof | |
| CN105803241B (en) | A kind of conveyor screw enhancing Metal Substrate or polymer matrix composite and preparation method | |
| KR102741427B1 (en) | Thermal conductors, thermally conductive materials, and packaging structures for semiconductor devices | |
| JP2006511098A (en) | Carbonaceous heat spreader and related methods | |
| CN102683568A (en) | Heat-conducting composite substrate with heat dissipation characteristic and manufacturing method thereof | |
| JP2013115096A (en) | Diamond-containing heat sink material and manufacturing method thereof | |
| JP2007500450A (en) | Composite materials and electrical circuits or modules | |
| CN105774130B (en) | A kind of high heat conduction high-air-tightness composite and preparation method thereof | |
| CN101794753B (en) | Preparation method of microsystem cooling device | |
| CN102528166B (en) | A grinding wire saw | |
| JP2006045596A (en) | Composite body with high thermal conductivity and low thermal expansion, and its manufacturing method | |
| CN101804526A (en) | A welding material containing diamond particles and its preparation method | |
| US6840424B2 (en) | Compression bonding tools and associated bonding methods | |
| CN104045081A (en) | Diamond composite and preparation method thereof | |
| CN101747869A (en) | Thermal interface material | |
| TWI380869B (en) | Welding materials containing diamond particles | |
| JP5275292B2 (en) | Method for producing high-density solidified molded body | |
| CN201766072U (en) | Diamond Granules for Welding Materials | |
| CN203197518U (en) | Single crystal diamond tool | |
| WO2004048638A1 (en) | Diamond material compounded of chemical vapor deposition diamond and polycrystalline-diamond, and the use of the same | |
| CN102130077A (en) | Vapor chamber with monolayer of diamond particles and related methods |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C12 | Rejection of a patent application after its publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20100818 |