CN101820227A - Ultrafast recovery switch module - Google Patents
Ultrafast recovery switch module Download PDFInfo
- Publication number
- CN101820227A CN101820227A CN201010145077A CN201010145077A CN101820227A CN 101820227 A CN101820227 A CN 101820227A CN 201010145077 A CN201010145077 A CN 201010145077A CN 201010145077 A CN201010145077 A CN 201010145077A CN 101820227 A CN101820227 A CN 101820227A
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- CN
- China
- Prior art keywords
- phase bridge
- bridge rectification
- switching circuit
- thyristor
- ultrafast recovery
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000011084 recovery Methods 0.000 title claims abstract description 32
- 239000004411 aluminium Substances 0.000 claims abstract description 12
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000010949 copper Substances 0.000 claims abstract description 11
- 229910052802 copper Inorganic materials 0.000 claims abstract description 11
- 239000003822 epoxy resin Substances 0.000 claims abstract description 8
- 239000004033 plastic Substances 0.000 claims abstract description 8
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 8
- 229910017083 AlN Inorganic materials 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 13
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000011144 upstream manufacturing Methods 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000741 silica gel Substances 0.000 abstract 1
- 229910002027 silica gel Inorganic materials 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000005538 encapsulation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
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- Power Conversion In General (AREA)
Abstract
The invention relates to an ultrafast recovery switch module which comprises a three-phase bridge rectification switching circuit, wherein the three-phase bridge rectification switching circuit is formed by serially connecting a three-phase bridge rectification circuit with a thyristor chip, the three-phase bridge rectification circuit is formed by connecting six ultrafast recovery diode chips, and the thyristor chips are connected in series with the anode output end of the bridge rectification circuit; all the elements in the three-phase bridge rectification switching circuit are connected in a bonding mode by aluminium wire leads, and the three-phase bridge rectification switching circuit is packaged between a plastic shell and a red copper soleplate through an elastic silica gel layer and an epoxy resin layer. The ultrafast recovery switch module not only can be adapted to great current impact when started, but also has wide applicable power range without employment of a mechanical switch, is more beneficial to the miniaturization of a rectification module, further lowers the manufacturing cost, and also has the characteristics of low noise, less electromagnetic pollution and long service life.
Description
[technical field]
The invention belongs to the power semiconductor device field, the combination that relates to Ultrafast recovery diode chip and thyristor chip be connected the encapsulation technology of semiconductor device.
[background technology]
Present three-phase commutation bridge in actual use, and is excessive at the impulse current of the moment of starting shooting, is easy to cause the damage of rectifying device itself or filter capacitor.For this reason, people adopt following three kinds of schemes to be overcome usually:
First kind of scheme is that as shown in Figure 1, this scheme only is applicable to low power place at the resistance of a negative temperature coefficient of rectification bridge output end series connection.
Second kind of scheme is starting resistance of rectification bridge output end serial connection, to reduce starting current, after the working stability operation, uses electromagnetic switch resistive short, as shown in Figure 2.The shortcoming of this scheme is that the switch frequent movement is easy to damage, and whole reliability is not high, and the volume of rectification module is bigger, then can not use the demand for development of the automatically controlled miniaturization of incompatibility in the conditional place of many usage spaces.
The third scheme is that as shown in Figure 3, this scheme technology is complicated, and needs to use three thyristor chips with three diodes and three half control bridge power supply plans that thyristor chip is formed, and cost is higher, and the user is difficult to receive.
In above-mentioned three kinds of schemes, owing to all use general-purpose diode, not only noise ratio is bigger in the course of the work, and has serious electromagnetic interference, these defectives are stable not only bad for the performance of rectification module self and life-span, and can produce electromagnetic pollution to electrical network.
[summary of the invention]
The object of the invention is to provide a kind of Ultrafast recovery switch module, and it can overcome above shortcomings in the prior art better.
The technical scheme that the present invention takes is as follows:
A kind of Ultrafast recovery switch module, it comprises red copper base plate, aluminium nitride ceramics copper-clad plate, three-phase bridge rectification switching circuit, three interchange binding posts, two direct current binding posts, internal electrode, aluminium wire lead, flexible silicon gel layer, epoxy resin layer and plastic casings, the three-phase bridge rectification switching circuit is formed by connecting by three-phase bridge rectifier circuit and a thyristor chip serial connection, three-phase bridge rectifier circuit is connected into by six Ultrafast recovery diode chips, and thyristor chip is serially connected in the cathode output end of bridge rectifier; The aluminium nitride ceramics copper-clad plate is fixed on the red copper base plate, six Ultrafast recovery diode chips and a thyristor chip in the three-phase bridge rectification switching circuit all are fixed in the aluminium nitride ceramics copper-clad plate, three exchange binding post and all link to each other with alternating current input point in the three-phase bridge rectifier circuit by internal electrode, two direct current binding posts all link to each other with direct current output point in the three-phase bridge rectifier circuit by internal electrode, the Ultrafast recovery diode chip, adopt the aluminium wire lead to be connected between thyristor chip and the aluminium nitride ceramics copper-clad plate in the bonding mode, all adopt the aluminium wire lead to connect in the bonding mode in the three-phase bridge rectification switching circuit between each components and parts, the three-phase bridge rectification switching circuit is encapsulated between plastic casing and the red copper base plate by flexible silicon gel layer and epoxy resin layer.
Further, be provided with anodal output interface, be provided with the thyristor control utmost point and thyristor auxiliary cathode successively at the electric current outflow end of thyristor chip at the electric current upstream end of thyristor chip.
In the present invention, owing to designed unique three-phase bridge rectification switching circuit, it is connected into by six Ultrafast recovery diodes and a thyristor chip, and Ultrafast recovery diode can make the whole electrical property of bridge rectifier better, and noise is lower; Thyristor chip replaces starting resistance and the electromagnetic switch in second kind of scheme of prior art, can reduce starting current more greatly in startup its resistance of moment, after the working stability operation, its resistance is minimum, such three-phase bridge rectification switching circuit can not only adapt to heavy current impact when starting, and the power bracket that is suitable for is wide, need not to use mechanical switch, be more conducive to the miniaturization of rectification module, can reduce the manufacturing cost of rectification module simultaneously significantly.Because the self performance feature of Ultrafast recovery diode and thyristor, the noise of the rectifier switch circuit that is combined by them is low, and electromagnetic pollution is little, and through actual tests, its noise is than the low 10-15 decibel of existing like product, and is very little to the electromagnetic pollution of electrical network.Because whole module adopts the patent encapsulation technology of applicant 200610038365.9 Ultrafast recovery module, and between Ultrafast recovery diode chip and thyristor chip, between the Ultrafast recovery diode chip, all adopt the bonding mode of aluminium wire lead to be connected between chip and the electrode, this connected mode can greatly reduce connection stress, thereby improves the reliability and the useful life of the work of whole rectifier switch module.
[description of drawings]
Fig. 1, Fig. 2, Fig. 3 are for handling common rectified current firing current three kinds of technical scheme figure bigger than normal;
Fig. 4, Fig. 5 are structural representations of the present invention; Fig. 5 is the vertical view of Fig. 4;
Fig. 6 is the circuit theory schematic diagram of this Ultrafast recovery switch module;
Among the figure, 1-red copper base plate; The copper-clad plate of 2-aluminium nitride ceramics; 3-Ultrafast recovery diode chip;
The 4-thyristor chip; 5-exchanges binding post; 6-direct current binding post; The 7-internal electrode; The anodal output interface of P4-; The G7-thyristor control utmost point; K8-thyristor auxiliary cathode; 8-aluminium wire lead; 9-flexible silicon gel layer; The 10-epoxy resin layer; The 11-plastic casing.
[embodiment]
Below in conjunction with description of drawings the specific embodiment of the present invention:
A kind of Ultrafast recovery switch module, it is characterized in that: it comprises red copper base plate 1, aluminium nitride ceramics copper-clad plate 2, the three-phase bridge rectification switching circuit, three exchange binding post 5, two direct current binding posts 6, internal electrode 7, aluminium wire lead 8, flexible silicon gel layer 9, epoxy resin layer 10 and plastic casing 11, the three-phase bridge rectification switching circuit is formed by connecting by three-phase bridge rectifier circuit and thyristor chip 4 serial connections, three-phase bridge rectifier circuit is connected into by six Ultrafast recovery diode chips 3, promptly six Ultrafast recovery diode chips 3 connect into the shunt rectifier circuit behind the series aiding connection in twos, Ultrafast recovery diode chip FD1 connects with FD4, Ultrafast recovery diode chip FD2 connects with FD5, Ultrafast recovery diode chip FD3 connects with FD6, thyristor chip 4 is serially connected in the cathode output end of bridge rectifier, electric current upstream end at thyristor chip 4 is provided with anodal output interface P4, electric current outflow end at thyristor chip 4 is provided with thyristor control utmost point G7 and thyristor auxiliary cathode K8 successively, as shown in Figure 6; Aluminium nitride ceramics copper-clad plate 2 is fixed on the red copper base plate 1, six Ultrafast recovery diode chips 3 and a thyristor chip 4 in the three-phase bridge rectification switching circuit all are fixed in the aluminium nitride ceramics copper-clad plate 2, three exchange binding post 5 and all link to each other with alternating current input point in the three-phase bridge rectifier circuit by internal electrode 7, two direct current binding posts 6 all link to each other with direct current output point in the three-phase bridge rectifier circuit by internal electrode 7, Ultrafast recovery diode chip 3, be connected in the bonding mode with aluminium wire lead 8 between thyristor chip 4 and the aluminium nitride ceramics copper-clad plate 2, all adopt aluminium wire lead 8 to connect in the bonding mode in the three-phase bridge rectification switching circuit between each components and parts, the three-phase bridge rectification switching circuit is encapsulated between plastic casing 11 and the red copper base plate 1 by flexible silicon gel layer 9 and epoxy resin layer 10.
Claims (2)
1. Ultrafast recovery switch module, it is characterized in that: it comprises red copper base plate (1), aluminium nitride ceramics copper-clad plate (2), the three-phase bridge rectification switching circuit, three exchange binding post (5), two direct current binding posts (6), internal electrode (7), aluminium wire lead (8), flexible silicon gel layer (9), epoxy resin layer (10) and plastic casing (11), the three-phase bridge rectification switching circuit is formed by connecting by three-phase bridge rectifier circuit and a thyristor chip (4) serial connection, three-phase bridge rectifier circuit is connected into by six Ultrafast recovery diode chips (3), and thyristor chip (4) is serially connected in the cathode output end of bridge rectifier; Aluminium nitride ceramics copper-clad plate (2) is fixed on the red copper base plate (1), Ultrafast recovery diode chip (3) in the three-phase bridge rectification switching circuit and thyristor chip (4) all are fixed in the aluminium nitride ceramics copper-clad plate (2), three exchange binding posts (5) and all link to each other with alternating current input point in the three-phase bridge rectifier circuit by internal electrode (7), two direct current binding posts (6) all link to each other with direct current output point in the three-phase bridge rectifier circuit by internal electrode (7), Ultrafast recovery diode chip (3), adopt aluminium wire lead (8) to be connected between thyristor chip (4) and the aluminium nitride ceramics copper-clad plate (2) in the bonding mode, all adopt aluminium wire lead (8) to connect in the bonding mode in the three-phase bridge rectification switching circuit between each components and parts, the three-phase bridge rectification switching circuit is encapsulated between plastic casing (11) and the red copper base plate (1) by flexible silicon gel layer (9) and epoxy resin layer (10).
2. according to the described Ultrafast recovery switch module of claim 1, it is characterized in that: the electric current upstream end at thyristor chip (4) is provided with anodal output interface (P4), is provided with the thyristor control utmost point (G7) and thyristor auxiliary cathode (K8) successively at the electric current outflow end of thyristor chip (4).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010145077A CN101820227A (en) | 2010-04-13 | 2010-04-13 | Ultrafast recovery switch module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010145077A CN101820227A (en) | 2010-04-13 | 2010-04-13 | Ultrafast recovery switch module |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101820227A true CN101820227A (en) | 2010-09-01 |
Family
ID=42655204
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201010145077A Pending CN101820227A (en) | 2010-04-13 | 2010-04-13 | Ultrafast recovery switch module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101820227A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795384A (en) * | 2012-10-31 | 2014-05-14 | 台达电子企业管理(上海)有限公司 | Switch circuit packaging module |
| CN104917399A (en) * | 2015-06-08 | 2015-09-16 | 浙江华晶整流器有限公司 | Insulated half-bridge rectifying module |
| US9754871B2 (en) | 2012-10-31 | 2017-09-05 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| CN110661436A (en) * | 2019-10-12 | 2020-01-07 | 珠海格力电器股份有限公司 | a wiring board |
| CN111477614A (en) * | 2020-05-29 | 2020-07-31 | 黄山市阊华电子有限责任公司 | A fast recovery rectifier diode module |
| CN111584465A (en) * | 2020-05-29 | 2020-08-25 | 黄山市阊华电子有限责任公司 | Rectifier diode module |
| CN112908949A (en) * | 2021-02-07 | 2021-06-04 | 丽水博远科技有限公司 | Cavity-divided rectifying module and manufacturing method thereof |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1339953A (en) * | 1970-06-19 | 1973-12-05 | Licentia Gmbh | Stabilized dc supply systems |
| JP2000295851A (en) * | 1999-04-09 | 2000-10-20 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
| JP2000295850A (en) * | 1999-04-09 | 2000-10-20 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
| CN1828889A (en) * | 2006-02-17 | 2006-09-06 | 陈兴忠 | Ultrafast recovery diode module |
| CN101656482A (en) * | 2009-09-04 | 2010-02-24 | 上海交通大学 | Three-phase rectifier electrifying device |
| CN201623159U (en) * | 2010-04-13 | 2010-11-03 | 陈兴忠 | Ultra-fast switch-recovering module |
-
2010
- 2010-04-13 CN CN201010145077A patent/CN101820227A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1339953A (en) * | 1970-06-19 | 1973-12-05 | Licentia Gmbh | Stabilized dc supply systems |
| JP2000295851A (en) * | 1999-04-09 | 2000-10-20 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
| JP2000295850A (en) * | 1999-04-09 | 2000-10-20 | Sansha Electric Mfg Co Ltd | Semiconductor module for power |
| CN1828889A (en) * | 2006-02-17 | 2006-09-06 | 陈兴忠 | Ultrafast recovery diode module |
| CN101656482A (en) * | 2009-09-04 | 2010-02-24 | 上海交通大学 | Three-phase rectifier electrifying device |
| CN201623159U (en) * | 2010-04-13 | 2010-11-03 | 陈兴忠 | Ultra-fast switch-recovering module |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103795384A (en) * | 2012-10-31 | 2014-05-14 | 台达电子企业管理(上海)有限公司 | Switch circuit packaging module |
| CN103795384B (en) * | 2012-10-31 | 2017-04-19 | 台达电子企业管理(上海)有限公司 | Switch circuit packaging module |
| US9735137B2 (en) | 2012-10-31 | 2017-08-15 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| US9754871B2 (en) | 2012-10-31 | 2017-09-05 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| US10276520B2 (en) | 2012-10-31 | 2019-04-30 | Delta Electronics (Shanghai) Co., Ltd. | Switch circuit package module |
| CN104917399A (en) * | 2015-06-08 | 2015-09-16 | 浙江华晶整流器有限公司 | Insulated half-bridge rectifying module |
| CN104917399B (en) * | 2015-06-08 | 2017-06-16 | 浙江华晶整流器有限公司 | A kind of insulated type semi-bridge rectifier module |
| CN110661436A (en) * | 2019-10-12 | 2020-01-07 | 珠海格力电器股份有限公司 | a wiring board |
| CN111477614A (en) * | 2020-05-29 | 2020-07-31 | 黄山市阊华电子有限责任公司 | A fast recovery rectifier diode module |
| CN111584465A (en) * | 2020-05-29 | 2020-08-25 | 黄山市阊华电子有限责任公司 | Rectifier diode module |
| CN112908949A (en) * | 2021-02-07 | 2021-06-04 | 丽水博远科技有限公司 | Cavity-divided rectifying module and manufacturing method thereof |
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| PB01 | Publication | ||
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Application publication date: 20100901 |