CN101850942B - Micro-Electro-Mechanical System Package Structure - Google Patents
Micro-Electro-Mechanical System Package Structure Download PDFInfo
- Publication number
- CN101850942B CN101850942B CN2009101340705A CN200910134070A CN101850942B CN 101850942 B CN101850942 B CN 101850942B CN 2009101340705 A CN2009101340705 A CN 2009101340705A CN 200910134070 A CN200910134070 A CN 200910134070A CN 101850942 B CN101850942 B CN 101850942B
- Authority
- CN
- China
- Prior art keywords
- chip
- packaging structure
- moisture
- substrate
- lid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004806 packaging method and process Methods 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000003292 glue Substances 0.000 claims description 6
- 239000011810 insulating material Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000003822 epoxy resin Substances 0.000 claims description 2
- 229920000647 polyepoxide Polymers 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 239000000853 adhesive Substances 0.000 claims 4
- 230000001070 adhesive effect Effects 0.000 claims 4
- 239000011368 organic material Substances 0.000 claims 1
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 238000007789 sealing Methods 0.000 abstract description 15
- 239000000084 colloidal system Substances 0.000 abstract 4
- 239000008393 encapsulating agent Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 6
- 239000004033 plastic Substances 0.000 description 5
- 229920000620 organic polymer Polymers 0.000 description 4
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/162—Disposition
- H01L2924/16235—Connecting to a semiconductor or solid-state bodies, i.e. cap-to-chip
Landscapes
- Micromachines (AREA)
Abstract
Description
【技术领域】【Technical field】
本发明涉及一种芯片封装结构,且特别是涉及一种微机电系统封装结构。The present invention relates to a chip packaging structure, and in particular to a micro-electromechanical system packaging structure.
【背景技术】【Background technique】
微机电系统(MEMS)是在微小化的封装结构中所制作的微型电子机械元件,其制造的技术十分类似于制造积体电路的技术,但MEMS装置与其周遭环境互动的方式则多于传统的积体电路,例如力学、光学或磁力上的互动。Micro-Electro-Mechanical Systems (MEMS) are tiny electro-mechanical components manufactured in miniaturized packages. The manufacturing technology is very similar to the technology of manufacturing integrated circuits, but MEMS devices interact with their surroundings in more ways than traditional Integrated circuits, such as mechanical, optical or magnetic interactions.
MEMS装置可包括极小的电子机械元件(例如开关、镜面、电容器、加速度计、感应器、电容感测器或引动器等),而MEMS装置可以单块方式与积体电路整合,同时大幅改善整个固态装置的插入损耗及电隔离效果。然而,MEMS装置在整个封装结构的巨观世界中是极微脆弱的,随时都可能被微小的静电或表面张力影响而造成故障。也因此,为了避免MEMS装置受到污染或损害,通常将其微机电元件密封于晶圆与盖板之间的一空腔中。MEMS devices can include extremely small electromechanical components (such as switches, mirrors, capacitors, accelerometers, inductors, capacitive sensors or actuators, etc.), and MEMS devices can be integrated with integrated circuits in a monolithic manner, while greatly improving Insertion loss and electrical isolation of the entire solid-state device. However, MEMS devices are extremely fragile in the macroscopic world of the entire packaging structure, and may be affected by tiny static electricity or surface tension at any time to cause failure. Therefore, in order to prevent the MEMS device from being polluted or damaged, its MEMS components are usually sealed in a cavity between the wafer and the cover plate.
图1是现有的一种微机电系统封装结构的示意图。请参照图1,将盖板110以胶框112固定于晶圆100上,以使微机电元件104密封于晶圆100与盖板110之间的一空腔106中。接着,将晶圆100以及盖板110切割为各个独立单元,以使微机电元件104密封在各个独立的MEMS结构中。由于微机电元件104被保护在空腔106中,因而确保微机电元件104能正常地作动。接着,再将各个MEMS结构以封胶体(图未示)密封,以完成微机电系统封装结构。FIG. 1 is a schematic diagram of a conventional MEMS packaging structure. Referring to FIG. 1 , the
然而,现有以有机高分子化合物做为胶框112或封胶体时,无法完全隔绝湿气。长时间下来,胶框112或封胶体的密封性变差,因而影响微机电元件104的正常作动。However, conventionally, when an organic polymer compound is used as the
因此,有必要提供一种微机电系统封装结构,以解决现有技术所存在的问题。Therefore, it is necessary to provide a MEMS packaging structure to solve the problems existing in the prior art.
【发明内容】【Content of invention】
本发明的主要目的是提供一种微机电系统封装结构,其通过抗湿气材料来提高封胶体的密封性及抗湿气性。The main purpose of the present invention is to provide a micro-electro-mechanical system packaging structure, which improves the sealing performance and moisture resistance of the encapsulant through the anti-moisture material.
达上述目的,本发明提供一种微机电系统封装结构,其包括一芯片、一盖体、一基板、多条导线、一封胶体以及一抗湿气材料层(moisture resistivelayer)。芯片具有一作用区,而芯片于作用区设有至少一微机电元件。盖体覆盖于芯片上,而基板用以承载芯片以及盖体。多条导线电性连接基板与芯片之间。封胶体密封于盖体的周围,并显露盖体的上表面。抗湿气材料层覆盖于封胶体上,以提高封胶体的密封性及抗湿气性。To achieve the above purpose, the present invention provides a micro-electro-mechanical system packaging structure, which includes a chip, a cover, a substrate, a plurality of wires, encapsulant, and a moisture resistant layer. The chip has an active area, and the chip is provided with at least one micro-electromechanical element in the active area. The cover covers the chip, and the substrate is used for carrying the chip and the cover. A plurality of wires are electrically connected between the substrate and the chip. The sealant is sealed around the cover and exposes the upper surface of the cover. The anti-moisture material layer covers the sealing body to improve the sealing performance and moisture resistance of the sealing body.
相较于现有技术,本发明的微机电系统封装结构,通过抗湿气材料,确实可以提高封胶体的密封性及抗湿气性。Compared with the prior art, the MEMS packaging structure of the present invention can indeed improve the sealing performance and moisture resistance of the encapsulant through the anti-moisture material.
【附图说明】【Description of drawings】
图1:现有的一种微机电系统封装结构的示意图。Figure 1: A schematic diagram of an existing MEMS packaging structure.
图2:本发明一实施例的微机电系统封装结构的示意图。Fig. 2: A schematic diagram of a MEMS packaging structure according to an embodiment of the present invention.
图3:本发明另一实施例的微机电系统封装结构的示意图。Fig. 3: A schematic diagram of a MEMS package structure according to another embodiment of the present invention.
【具体实施方式】【Detailed ways】
为让本发明上述目的、特征及优点更明显易懂,下文特举本发明较佳实施例,并配合附图,作详细说明如下:In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and understandable, the preferred embodiments of the present invention will be specifically cited below, together with the accompanying drawings, for a detailed description as follows:
请参照图2是本发明一实施例的微机电系统封装结构的示意图,图3是本发明另一实施例的微机电系统封装结构的示意图。Please refer to FIG. 2 , which is a schematic diagram of a MEMS packaging structure according to an embodiment of the present invention, and FIG. 3 is a schematic diagram of a MEMS packaging structure according to another embodiment of the present invention.
微机电系统封装结构包括一芯片200、一盖体210、一基板220、多条导线230、一封胶体240以及一抗湿气材料层(moisture resistive layer)250。芯片200具有一作用区202,而芯片200于作用区202设有至少一微机电元件204。盖体210覆盖于芯片200上,且盖体210具有一上表面212。基板220用以承载芯片200以及盖体210。多条导线230电性连接基板220与芯片200之间。封胶体240密封于盖体210的周围,并显露盖体210的上表面212。抗湿气材料层250覆盖于封胶体240上。芯片200例如是电荷耦合元件(CCD)或互补金属氧化半导体(CMOS)之类的光感测芯片,而作用区202例如是光感测区。The MEMS packaging structure includes a
请参照图2,在本实施例中,将盖体210(例如是玻璃基板)以胶框214与其上方的金属环(例如是铜环,如斜线部分)固定于晶圆(图未示)上,以使微机电元件204密封于晶圆与盖体210之间的各个空腔206中。接着,将晶圆以及盖体210切割为各个独立单元,以使微机电元件204密封在各个独立的MEMS结构中。接着,将此MEMS结构配置于基板220上,并以打线接合的多条导线240电性连接于基板220与芯片200之间。接着,以点胶的方式将封胶体240密封于盖体210的周围,并显露盖体210的上表面212,以使光感测芯片的光感测区能接收穿透盖体210的光线,以进行后续的影像处理。Please refer to FIG. 2, in this embodiment, the cover body 210 (such as a glass substrate) is fixed to the wafer (not shown) by a
值得注意的是,封胶体240为有机高分子化合物,例如是环氧树脂,由于有机化合物的分子结构中亲水性基团多,仅能阻挡外在的污染及部分湿气,但无法完全阻隔亲水性基团与湿气作用。因此,本发明以化学气相沉积或物理气相沉积技术形成一抗湿气材料层250,其覆盖于封胶体240上,以有效地阻隔封胶体240的亲水性基团与湿气作用。这样,微机电元件204能正常地作动于此微机电系统封装结构260a中。It is worth noting that the
在本实施例中,抗湿气材料层250的材质为密致性较高的无机绝缘材料,例如是氧化硅、氮化硅、氮氧化硅或其他不含亲水性基团的氮化物、氧化物及氮氧化物,其抗湿气能力大于封胶体240的抗湿气能力。也就是说,由于无机绝缘材料不含亲水性基团,因而不与湿气作用,所以能有效地阻绝湿气。长时间下来,胶框214或封胶体240的密封性不会改变。In this embodiment, the material of the
在下一实施例中,同样以抗湿气材料层250覆盖于封胶体240上,仅有部分结构稍作改变,其中盖体210例如是透明基板或不透明的硅基板,请参照下列的说明。In the next embodiment, the
请参照图3,在本实施例中,先将芯片200的背面贴附于基板220上,并以打线接合的多条导线230电性连接于基板220与芯片200之间。接着,将盖体210以胶框214与其上方的金属环(斜线部分)固定于基板220上,以使配置有微机电元件204的芯片200与多条导线230密封于基板220与盖体210之间的空腔206中。接着,以点胶的方式将封胶体240密封于盖体210的周围,并显露盖体210的上表面212。这样,微机电元件204能正常地作动于此微机电系统封装结构260b。Please refer to FIG. 3 , in this embodiment, the back surface of the
在上述二实施例中,本发明的微机电封装结构先以封胶体(有机高分子材料)进行第一层的密封步骤,再以另一层密致度较高的抗湿气材料(无机绝缘材料)进行第二层的防湿气步骤,以覆盖于有机高分子材料上。因此,诸如开关、镜面、电容器、加速度计、感应器、电容感测器或引动器等微机电元件都可密封于空腔内,以避免外界的污染及湿气,所以能有效提高操作的可靠度。In the above two embodiments, the micro-electromechanical packaging structure of the present invention first uses the encapsulant (organic polymer material) to perform the sealing step of the first layer, and then uses another layer of high-density moisture-resistant material (inorganic insulating material) material) to carry out the moisture-proof step of the second layer to cover the organic polymer material. Therefore, MEMS components such as switches, mirrors, capacitors, accelerometers, inductors, capacitive sensors or actuators can be sealed in the cavity to avoid external pollution and moisture, so it can effectively improve the reliability of operation Spend.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101340705A CN101850942B (en) | 2009-03-31 | 2009-03-31 | Micro-Electro-Mechanical System Package Structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009101340705A CN101850942B (en) | 2009-03-31 | 2009-03-31 | Micro-Electro-Mechanical System Package Structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101850942A CN101850942A (en) | 2010-10-06 |
| CN101850942B true CN101850942B (en) | 2012-06-20 |
Family
ID=42802660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009101340705A Active CN101850942B (en) | 2009-03-31 | 2009-03-31 | Micro-Electro-Mechanical System Package Structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101850942B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102976262B (en) * | 2012-11-28 | 2015-05-20 | 江苏物联网研究发展中心 | Optically-measurable MEMS (Micro-electromechanical System) encapsulating structure provided with sealing cap electrode |
| US9359190B2 (en) * | 2014-06-30 | 2016-06-07 | Himax Display, Inc. | MEMS package structure and method for fabricating the same |
| TWI605010B (en) * | 2015-06-18 | 2017-11-11 | 立景光電股份有限公司 | Mems package structure and manufacturing method thereof |
| TWI640073B (en) * | 2017-08-16 | 2018-11-01 | 勝麗國際股份有限公司 | Sensor package structure |
| JP7023724B2 (en) * | 2018-01-24 | 2022-02-22 | 京セラ株式会社 | Package and electronics |
| TWI693382B (en) | 2019-01-24 | 2020-05-11 | 中光電智能感測股份有限公司 | Force sensor |
| CN111473893B (en) * | 2019-01-24 | 2022-03-29 | 中光电智能感测股份有限公司 | Force sensor |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6661084B1 (en) * | 2000-05-16 | 2003-12-09 | Sandia Corporation | Single level microelectronic device package with an integral window |
-
2009
- 2009-03-31 CN CN2009101340705A patent/CN101850942B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6661084B1 (en) * | 2000-05-16 | 2003-12-09 | Sandia Corporation | Single level microelectronic device package with an integral window |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101850942A (en) | 2010-10-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7786560B2 (en) | MEMS package structure | |
| CN101850942B (en) | Micro-Electro-Mechanical System Package Structure | |
| US20060006511A1 (en) | Ultrathin module for semiconductor device and method of fabricating the same | |
| JP2022008991A (en) | Structure and method for packaging stress-sensitive mems | |
| US8610271B2 (en) | Chip package and manufacturing method thereof | |
| US8310050B2 (en) | Electronic device package and fabrication method thereof | |
| US20110156106A1 (en) | Hermetic mems device and method for fabricating hermetic mems device and package structure of mems device | |
| WO2011062242A1 (en) | Sensor device and method of manufacture thereof | |
| US9735128B2 (en) | Method for incorporating stress sensitive chip scale components into reconstructed wafer based modules | |
| CN101217156A (en) | Chip scale packaging and manufacturing method of electronic component and CMOS image sensor | |
| US20120235252A1 (en) | Manufacturing method for an encapsulated micromechanical component, corresponding micromechanical component, and encapsulation for a micromechanical component | |
| KR101048085B1 (en) | Functional device package and manufacturing method thereof | |
| CN103069563A (en) | Method for producing at least one optoelectronic semiconductor component | |
| CN105470212A (en) | Packages for semiconductor devices and methods for assembling same | |
| CN103663351B (en) | The wafer-class encapsulation and related manufacturing process of MEMS integrated devices | |
| US20150210538A1 (en) | Mems package structure | |
| JP2008182014A (en) | Package substrate and manufacturing method thereof | |
| CN101369568B (en) | Packaging structure, packaging method and photosensitive device | |
| CN112118526B (en) | Micro-electro-mechanical system microphone packaging structure and packaging method | |
| JP5885145B2 (en) | MEMS mounting structure | |
| US20080061409A1 (en) | Micro electro-mechanical system module package | |
| CN200955018Y (en) | MEMS module packaging structure | |
| TWM308496U (en) | Package structure of microelectromechanical module systematization | |
| CN105023916A (en) | Chip package and method for manufacturing the same | |
| CN104876175B (en) | Micro-Electro-Mechanical System Package Structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |