CN101853784A - Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film - Google Patents
Method for transversely inducing and crystallizing low-temperature polycrystalline silicon film Download PDFInfo
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- CN101853784A CN101853784A CN 201010175536 CN201010175536A CN101853784A CN 101853784 A CN101853784 A CN 101853784A CN 201010175536 CN201010175536 CN 201010175536 CN 201010175536 A CN201010175536 A CN 201010175536A CN 101853784 A CN101853784 A CN 101853784A
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- 238000000034 method Methods 0.000 title claims abstract description 52
- 230000001939 inductive effect Effects 0.000 title claims abstract description 40
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims abstract description 129
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 60
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 19
- 238000000137 annealing Methods 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 230000001681 protective effect Effects 0.000 claims abstract description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 31
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 12
- 239000007789 gas Substances 0.000 claims description 10
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 229910021484 silicon-nickel alloy Inorganic materials 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 229910052786 argon Inorganic materials 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 4
- 238000001704 evaporation Methods 0.000 claims description 4
- 238000004528 spin coating Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 7
- 239000000463 material Substances 0.000 abstract description 6
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- RPELOZWDWZQYDV-UHFFFAOYSA-N [Si]=O.[Ni] Chemical compound [Si]=O.[Ni] RPELOZWDWZQYDV-UHFFFAOYSA-N 0.000 abstract 2
- 238000002425 crystallisation Methods 0.000 description 39
- 230000008025 crystallization Effects 0.000 description 38
- 229920005591 polysilicon Polymers 0.000 description 18
- 239000010408 film Substances 0.000 description 14
- 239000012528 membrane Substances 0.000 description 14
- 239000010409 thin film Substances 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 238000001000 micrograph Methods 0.000 description 4
- 125000004429 atom Chemical group 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000411 inducer Substances 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 238000005011 time of flight secondary ion mass spectroscopy Methods 0.000 description 2
- 238000002042 time-of-flight secondary ion mass spectrometry Methods 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 229910018553 Ni—O Inorganic materials 0.000 description 1
- 229910018557 Si O Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910008071 Si-Ni Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910006300 Si—Ni Inorganic materials 0.000 description 1
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 238000006701 autoxidation reaction Methods 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000002815 nickel Chemical class 0.000 description 1
- 229910000480 nickel oxide Inorganic materials 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
The invention provides a method for transversely inducing and crystallizing a low-temperature polycrystalline silicon film, comprising the following steps that: step 1) a noncrystalline silicon layer is formed on a substrate, and then an oxide layer; step 2) a groove is etched on the oxide layer so as to expose the noncrystalline silicon layer, the width of the groove is 2mum-30mum and the space thereof is 60-5000mum; step 3) nickel-silicon oxide film is formed on the exposed noncrystalline silicon layer, and the thickness of the nickel-silicon oxide film is 2.5A-50A; and step 4) annealing is carried out on the obtained products generated in the step 3) for 1 hour under the environment of inert or protective gas. The method adopts SR-Ni/Si oxide as a film material, can effectively reduce the residual nickel in the polycrystalline silicon film, and is very suitable for manufacturing polycrystalline silicon by MILC. Simultaneously, the allowed technique error is also bigger when manufacturing polycrystalline silicon substances, thus not only providing a wider technique window, but also preventing the influence of different technique parameters on polycrystalline silicon TFT.
Description
Technical field
The invention belongs to the film preparation field, relate in particular to a kind of method of transversely inducing and crystallizing low-temperature polycrystalline silicon film.
Background technology
Although active matrix liquid crystal demonstration (AM-LCD) major part still is made up of amorphous silicon (a-Si) thin-film transistor (TFT) at present, but for Active Matrix LCD At, adopt polysilicon (p-Si) thin-film transistor that higher resolution and littler pixel can be provided, and when adopting multi-crystal TFT, some drive circuits can also be integrated on the glass substrate.In addition, aspect driving organic LED display (OLED), multi-crystal TFT is more stable than non-crystalline silicon tft, and therefore low-cost, high-performance and more reliable low temperature polycrystalline silicon (LTPS) treatment technology are essential.
The existing method that obtains polysilicon membrane mainly comprises solid state crystallization method (SPC), laser annealing method (ELA), quick high-temp annealing method (RTA) and the horizontal induced crystallization of metal (MILC) etc.In said method, because the resulting polysilicon membrane good uniformity of MILC, cost is low, pays close attention to greatly and be subjected to people.When adopting the MILC method, adopt pure metallic nickel that evaporation forms as the thin-film material of inducing usually, but that resulting polysilicon membrane contain more nickel is residual, the chances are for the ratio of nickel/silicon～and 10
-3The order of magnitude (IEEE Trans, Electron Devices, 48 (1655), 2001), this higher nickel residual concentration causes prepared polysilicon membrane unstable properties easily.
Summary of the invention
Therefore, the objective of the invention is to overcome the defective of above-mentioned prior art, provide a kind of and can reduce the method that remains in the transversely inducing and crystallizing low-temperature polycrystalline silicon film of nickel concentration in the polysilicon membrane.
The objective of the invention is to be achieved through the following technical solutions:
According to the present invention, a kind of method of transversely inducing and crystallizing low-temperature polycrystalline silicon film is provided, comprising:
Step 1): on substrate, form amorphous silicon layer, form oxide skin(coating) then;
Step 2): etch groove on described oxide skin(coating), to expose amorphous silicon layer, the width of this groove is 2 μ m～30 μ m, and spacing is 60～5000 μ m;
Step 3): form the nisiloy sull on described exposed noncrystalline silicon layer, the thickness of this nisiloy sull is 2.5
～50
Step 4): with the step 3) products therefrom in inertia or protective gas environment, 590 ℃ of annealing 1 hour down.
In technique scheme, described nisiloy sull is made by evaporation, spin coating method.
In technique scheme, form described nisiloy sull by sputter nickel silicon alloy target.
In technique scheme, the ratio of nickel and silicon is 1: 1～1: 50 in the described nickel silicon alloy target.
In technique scheme, the ratio of nickel and silicon is 1: 9 in the described nickel silicon alloy target.
In technique scheme, the atomic concentration ratio of oxygen, silicon and nickel is 40: 21: 1 in the described nisiloy oxide.
In technique scheme, described sputter procedure is carried out under the environment of oxygen and argon gas, and sputtering power is 7W to 40W.
In technique scheme, the ratio of described oxygen and argon gas is 1: 100 to 1: 200.
Compared with prior art, the invention has the advantages that the residual concentration that has reduced nickel in the prepared polysilicon membrane.
Description of drawings
It is following that embodiments of the present invention is further illustrated with reference to accompanying drawing, wherein:
Fig. 1 is the schematic diagram that is used for the multi-layer film structure of transversely inducing and crystallizing low-temperature polycrystalline silicon film of the present invention;
Fig. 2 be embodiments of the invention 1 590 ℃ down after annealing half an hour on amorphous silicon layer the partially-crystallized microphotograph of sample;
Fig. 3 is the x-ray photoelectron energy spectrogram (XPS) from slowly-releasing nickel/Si oxide of embodiments of the invention 1;
Fig. 4 has illustrated the curve chart of relation of thickness of crystallization rate and two kinds of inducing substances;
Fig. 5 a has illustrated crystallization rate and the curve chart of inducing the relation of well width;
Fig. 5 b has illustrated from the amorphous silicon membrane layer viewed at 590 ℃ of halfhour sample microphotographs of annealing down;
Fig. 6 has illustrated crystallization rate and the curve chart of inducing the relation of separation;
The nickel that Fig. 7 has remained in the polysilicon membrane when having illustrated to adopt three kinds of different inducing substances distributes.
Embodiment
The film of inducing of the present invention is made by the nisiloy oxide, because it can constantly spontaneously discharge nickel in the induced longitudinal crystallization process, thereby reduced the nickel that remains in the polysilicon membrane, this thin-film material has been called " from slowly-releasing nisiloy oxide (SR-Ni/Si oxide) " herein.
Preparation
The method that is used for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to the embodiment of the invention 1 may further comprise the steps at least:
1) at first adopts low-pressure chemical vapor deposition (LPCVD) on substrate 11 materials, to deposit the amorphous silicon active layer of 50nm, then deposit the oxide (low temperature oxide, i.e. LTO) of 100nm thickness;
2) by using the development photoetching treatment, on the LTO layer, etch one or more grooves 12 (this groove is called and induces groove) herein, induce the about 30 μ m of width (W) of groove, the adjacent about 5000 μ m of spacing (S) that induce between the groove, because groove penetrates the LTO layer, expose the amorphous silicon of inducing under the groove, as shown in Figure 1;
3) sputter nickel/Si oxide 13 on the amorphous silicon in inducing groove, Ni: Si=1 in the wherein employed nickel silicon alloy target: 9, and the ratio of argon gas and oxygen is 200: 1 in the sputter environment, sputtering power is generally 10W, time is 10 minutes, and the thickness (T) that records nickel/Si oxide is approximately 2.5 dusts
4) above-mentioned product is carried out 590 ℃ of annealing in process of 1 hour in nitrogen atmosphere, thereby realize the crystallization of amorphous silicon.
Fig. 2 be embodiments of the invention 1 590 ℃ down after annealing half an hour on amorphous silicon layer the partially-crystallized microphotograph of sample.As can be seen from the figure, in this crystallization process, crystallization is usually from inducing amorphous silicon under the groove 22 to begin and along with the annealing time cross growth, the direction of crystallization is substantially all perpendicular to inducing groove 22.
By X-ray photoelectron spectroscopic analysis nickel/Si oxide, as shown in Figure 3, corresponding to Ni
2p, O
1sAnd Si
2pBond energy be respectively 854.3eV, 532.5e and 103.5eV.This shows that silicon and nickle atom are surrounded by oxygen atom.The concentration ratio of oxygen, silicon and nickle atom is 64.18: 34.19: 1.63 (being about 40: 21: 1).What it should be noted that present embodiment uses is 9: 1 nickel silicon alloy, and sputter procedure is to carry out under 200: 1 argon oxygen mixed environment, so we suppose that the nickel/silicon alloy film of sputter is 19SiO
2: Si
2NiO
2Alloy structure.Si
2NiO
2May comprise Si
2The structure that O-NiO mixes, and its molecular concentration in the nickel/Si oxide of institute's sputter has only 5%.As everyone knows, the bond strength of Ni-O has only 93.6 ± 0.9K car/mol, and is lower than Si-O (190.9 ± 2K car/mol), but is higher than Si-Ni (76 ± 4Kcar/mol).Contrast these bond strengths mutually, the principle of this revulsive crystallization may be: the silicon atom in the amorphous silicon adjacent with nickel/Si oxide is had the ability from Si
2Snatch away nickel among the O-NiO, and autoxidation becomes SiO
2, discharge monatomic nickel.This reaction can be described as:
NiO+Si
2O→2SiO+Ni
Simultaneously, along with crystallization media inducing crystallization of amorphous silicon, the nickle atom that discharges will generate nickel silicide with the silicon generation chemical reaction in the amorphous silicon.In this crystallization process, only be the nickel of under relatively low ratio, having substituted from the nickel/silicon matter of slowly-releasing.This nickel induce the source by silicon and nisiloy oxide sluggish nickel is provided, be different from pure nickel source, a large amount of pure nickel atoms is provided.Therefore the nickel consumption in the nickel oxide will lack when adopting pure nickel.Thisly can reduce nickel residual in the polysilicon from the slowly-releasing active nickel.
Thickness T from slowly-releasing nisiloy oxide
Method according to the foregoing description 1 prepares embodiment 2～6, and different is is respectively 4 from the thickness T of slowly-releasing nisiloy oxide
10
20
30
50
In order to contrast, having prepared with thickness respectively is 10
20
50
Pure nickel be the sample of inducer.Fig. 4 be illustrated of the present invention from slowly-releasing nickel/Si oxide and traditional pure nickel material thickness and the curve chart of the relation of crystallization rate.Wherein crystallization rate is meant that the interior nickel of special time (referring to 1 hour here) induces the length of polysilicon lateral growth.In this figure, the relation of crystallization rate and two kinds of inducing substance thickness has very big difference.Use is from slowly-releasing nickel/Si oxide, and crystallization rate surpasses 4 at thickness
The time reach steady state value; The use pure nickel, crystallization rate obviously changes along with the variation of thickness.This explanation is better than pure nickel metal from the technology permissible error of slowly-releasing nickel/Si oxide.Below table 1 show the thickness and the crystallization rate from slowly-releasing nisiloy oxide of the embodiment of the invention 1～6.
Table 1
Induce the width W of groove
Method according to the foregoing description 1 prepares embodiment 7～12, and that different is the about 60 μ m of interval S that induce groove, the effective width W that induces groove from 2 μ m to 30 μ m.
Fig. 5 a has illustrated crystallization rate and the curve chart of inducing the relation of well width W.As can be seen, along with W increases, crystallization takes the lead in rising from Fig. 5 a, and saturated during greater than 8 μ m at W, this is because crystallization needs a certain amount of nickel that " front end " laterally moved.With the zone that amorphous silicon surfaces directly contacts is to be determined by the width of inducing groove.Under certain sputtering condition, the contact area bigger with amorphous silicon means that more nickel is diffused into amorphous silicon membrane and bigger crystallization rate.At a certain temperature, crystallization rate increases along with the rising of the concentration of nickel in amorphous silicon, up to the rate of reaching capacity.Therefore, as W during, do not have enough nickel to be diffused in the amorphous silicon and do not reach capacity less than 8 μ m.When W greater than 8 μ m, being diffused into nickel in the amorphous silicon is enough to form " front end " stably, and saturated in the time of 590 ℃.Be diffused into nickel unnecessary in the amorphous silicon and will no longer influence crystallization rate.Fig. 5 b has illustrated the amorphous silicon membrane layer, and viewed shown in Fig. 5 b, wherein vertical line represents to induce groove at 590 ℃ of following halfhour sample microphotographs of annealing, and the width of inducing groove more than the picture black dotted lines is 1 μ m, and the W in its underpart is 2 μ m.The explanation of this phenomenon is as the W that induces groove during less than 2 μ m, and the nickel that is diffused in the amorphous silicon membrane is not enough to form " the preceding forward line of crystallization " stably, so the crystallization polysilicon domain of having only some dish shapes is along inducing the groove distribution.Below table 2 show the effective width of inducing groove and the crystallization rate of the embodiment of the invention 7～12.
Table 2
| Embodiment | Induce the width W (μ m) of groove | Crystallization rate (μ m/h) |
| ??7 | ?2 | ??21.2 |
| ??8 | ?3.5 | ??23.3 |
| ??9 | ?4 | ??25.8 |
| ??10 | ?4.5 | ??26.5 |
| ??11 | ?8 | ??28.7 |
| ??12 | ?30 | ??28.9 |
Induce the interval S of groove
Singly not the thickness of inducing substance and the width of inducing groove, induce the distance between groove can influence crystallization rate yet.Method according to the foregoing description 1 prepares embodiment 13～17, and different is that W is 6 μ m, and T is 2 μ m, the interval S of inducing groove from 0 μ m to 1500 μ m.
Fig. 6 has illustrated crystallization rate and the curve chart of inducing the relation of separation S, and as can be seen from the figure, S is more little, is distributed in to induce the groove many more in certain zone.Therefore, more nickel will be diffused in the amorphous silicon, and crystallization rate also can be accelerated.As previously mentioned, if the nickel of diffusion enough forms stable " forward " and the crystallization rate that reaches capacity, crystallization rate will no longer improve along with the minimizing of S.As S during greater than 60 μ m (second data point in the 60 μ m corresponding diagram), crystallization rate descends along with the rising of S.Because along with the decline of W/S ratio, the nickel that is diffused in the amorphous silicon membrane reduces, and is lower than crystallization rate.
Inducer
For the performance of crystallization polysilicon relatively, the present invention has also prepared 3 kinds of different sources of inducing on same amorphous silicon, be labeled as A respectively, B and C.Wherein sample A and B adopt the nisiloy oxide as method preparation as described in the embodiment 1, and sputter is 3 minutes and 60 minutes respectively, sample C adopt by electron-beam vapor deposition method deposit 50
Pure nickel, three samples crystallize into polysilicon after through 590 ℃ annealing in 2 hours fully.The concentration of residual nickel compares in the polysilicon membrane that these 3 kinds of samples are obtained, and describe to analyze with TOF-SIMS (time of flight secondary ion massspectrometry), tested near the residual nickel of induction port in three crystallization polysilicons, as shown in Figure 7 along the film vertical depth to film surface.As can be seen from Figure 7, the distribution of nickel in three samples is uneven.The residual peak value of nickel appears at the bottom near the amorphous silicon of glass, and the nickel in sample A and B is residual about the same, but these two all is lower than half of the order of magnitude of sample C.The thickness of this explanation inducing substance is not that the nickel that influences as initial nickel capacity on the interface of adjacent amorphous silicon film is residual.
Above embodiment only is exemplary, and in other embodiments of the invention, described nisiloy oxide can also adopt the additive method except that sputter to prepare, and includes but not limited to evaporation, spin-coating method etc.Preferred when adopting sputtering method to prepare above-mentioned nisiloy oxide; the ratio of nickel and silicon can be between 1: 1～1: 50 in the described nickel silicon alloy target; described sputter and annealing in process process can be carried out under oxygen and situation that other inertia or protective gas mix; other inertia or protective gas comprise nitrogen, argon gas etc.; ratio can be between 1: 100 to 1: 200 during sputter; described sputtering power can be between 7W to 40W, and sputtering time can be at 1 minute to 1 hour.Should be appreciated that to those skilled in the art described backing material includes but not limited to glass substrate, polymer plastic etc.Described low temperature oxide is preferably cryogenic oxidation silicon.Described low-pressure chemical vapor deposition (LPCVD) can also adopt other common method for manufacturing thin film to substitute for example sputter, electron beam evaporation, spin coating etc.
In the present invention, adopt the SR-Ni/Si oxide as inducer, the nickel that can reduce effectively in the polysilicon film is residual, is very suitable for MILC and makes polysilicon.Simultaneously, the fabrication error that is allowed when making polycrystalline silicon substances is also big relatively, and wideer process window not only is provided, and has also prevented the influence of different technological parameters to multi-crystal TFT.
Although the present invention is made specific descriptions with reference to the above embodiments, but for the person of ordinary skill of the art, should be appreciated that and to make amendment based on content disclosed by the invention within spirit of the present invention and the scope or improve not breaking away from, these modifications and improving all within spirit of the present invention and scope.
Claims (9)
1. the method for a transversely inducing and crystallizing low-temperature polycrystalline silicon film comprises:
Step 1): on substrate, form amorphous silicon layer, form oxide skin(coating) then;
Step 2): etch groove on described oxide skin(coating), to expose amorphous silicon layer, the width of this groove is 2 μ m～30 μ m, and spacing is 60～5000 μ m;
Step 3): form the nisiloy sull on described exposed noncrystalline silicon layer, the thickness of this nisiloy sull is 2.5
～50
Step 4): with the step 3) products therefrom in inertia or protective gas environment, 590 ℃ of annealing 1 hour down.
2. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, described nisiloy sull is made by evaporation, spin coating method.
3. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, forms described nisiloy sull by sputter nickel silicon alloy target.
4. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, the ratio of nickel and silicon is 1: 1～1: 50 in the described nickel silicon alloy target.
5. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, the ratio of nickel and silicon is 1: 9 in the described nickel silicon alloy target.
6. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, the atomic concentration ratio of oxygen, silicon and nickel is 40: 21: 1 in the described nisiloy oxide.
7. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, described sputter procedure is carried out under the environment of oxygen and argon gas, and sputtering power is 7W to 40W.
8. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, the ratio of described oxygen and argon gas is 1: 100 to 1: 200.
9. the method for transversely inducing and crystallizing low-temperature polycrystalline silicon film according to claim 1 is characterized in that, described oxide is a silica.
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| CN102610650A (en) * | 2011-01-19 | 2012-07-25 | 广东中显科技有限公司 | Polycrystalline thin film transistor |
| CN102956499A (en) * | 2011-08-23 | 2013-03-06 | 广东中显科技有限公司 | Preparation method of polysilicon film |
| CN103779420A (en) * | 2011-08-23 | 2014-05-07 | 广东中显科技有限公司 | Polycrystalline silicon thin-film transistor with bridging grain structure |
| CN103779391A (en) * | 2011-08-23 | 2014-05-07 | 广东中显科技有限公司 | Polycrystalline silicon thin film with bridging grain structure and preparation method thereof |
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| CN101853784B (en) | 2012-07-04 |
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