CN101944476A - Wafer washing method - Google Patents
Wafer washing method Download PDFInfo
- Publication number
- CN101944476A CN101944476A CN2009100545835A CN200910054583A CN101944476A CN 101944476 A CN101944476 A CN 101944476A CN 2009100545835 A CN2009100545835 A CN 2009100545835A CN 200910054583 A CN200910054583 A CN 200910054583A CN 101944476 A CN101944476 A CN 101944476A
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- CN
- China
- Prior art keywords
- wafer
- cleaning
- deionized water
- hot
- pollutant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 238000005406 washing Methods 0.000 title abstract 4
- 239000008367 deionised water Substances 0.000 claims abstract description 38
- 239000003344 environmental pollutant Substances 0.000 claims abstract description 28
- 231100000719 pollutant Toxicity 0.000 claims abstract description 28
- 239000002245 particle Substances 0.000 claims abstract description 17
- 238000004140 cleaning Methods 0.000 claims description 40
- 229910021641 deionized water Inorganic materials 0.000 claims description 34
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 34
- 239000013078 crystal Substances 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- 239000011261 inert gas Substances 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 239000012535 impurity Substances 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 150000002894 organic compounds Chemical class 0.000 claims description 6
- 238000007664 blowing Methods 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 abstract description 12
- 230000000694 effects Effects 0.000 abstract description 9
- 238000001035 drying Methods 0.000 abstract description 5
- 239000003153 chemical reaction reagent Substances 0.000 abstract description 4
- 239000003595 mist Substances 0.000 abstract 4
- 238000005516 engineering process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000011010 flushing procedure Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- UPLPHRJJTCUQAY-WIRWPRASSA-N 2,3-thioepoxy madol Chemical compound C([C@@H]1CC2)[C@@H]3S[C@@H]3C[C@]1(C)[C@@H]1[C@@H]2[C@@H]2CC[C@](C)(O)[C@@]2(C)CC1 UPLPHRJJTCUQAY-WIRWPRASSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000012940 design transfer Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
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- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a wafer washing method, comprising the following steps: providing a wafer; washing the wafer with hot de-ionized water mist; and drying the wafer, wherein the hot de-ionized water mist has preset temperature between 50 DEG C and 99 DEG C. In the method, the hot de-ionized water mist is utilized to wash the wafer and has higher temperature; therefore, the hot de-ionized water mist has higher molecular kinetic energy, can effectively destroy the adhesion between the pollutants and the surface of the wafer and improve the particle removal efficiency and achieves terrific washing effect. Without new chemical reagents introduced, the method can not cause any side effect on the semiconductor devices.
Description
Technical field
The present invention relates to integrated circuit and make the field, particularly relate to a kind of method for cleaning wafer.
Background technology
Make the field at integrated circuit, behind some processing step, can stay pollutant at crystal column surface usually, described pollutant includes organic compounds, metal impurities or particle (Particle) etc., and these pollutants are very big for the influence of product subsequent technique.For example, adhering to of particle can influence the authenticity of photoetching process design transfer, even can cause the short circuit of circuit structure.Therefore, in fabrication of semiconductor device, the most frequent processing step is exactly that wafer cleans, and is attached to the pollutant of crystal column surface with removal, avoid the carrying out of these pollutant effect successive process, and prevent that cleaning machine and other wafer are subjected to the pollution of these pollutants.
At present, the removal of the pollutant on the wafer can adopt rotary-type board to finish, the DNS-SU3000 board that for example Japanese SCREEN company produces, described rotary-type board can provide automation one chip manufacturing process for cleaning, is applicable to the processing at wafer frontside, the back side and edge.When described rotary-type board cleaning wafer, can be in the wafer rotation, from the wafer top with deionized water (De-ionized Water, DIW) be discharged on the wafer, the temperature of described deionized water is a room temperature, that is to say, the temperature of described deionized water is less than 25 ℃.Then, the centrifugal force by rotation is produced makes deionized water be covered with whole crystal column surface.Afterwards, the inert gas of jetting again with dry wafer, and is finished the wafer cleaning in crystal column surface.
But, because the molecular kinetic energy of the deionized water of described room temperature is less, so the removal dynamics for the stronger pollutant of some and crystal column surface adhesion property is not enough, therefore, when the cleaning process of reality finishes, still residual on the surface of wafer have a large amount of pollutants, had a strong impact on the reliability and the stability of semiconductor device.
How effectively removing wafer surface pollutant is that those skilled in the art wish to solve but one of open question always.
Summary of the invention
The invention provides a kind of method for cleaning wafer, it can effectively remove the pollutant of crystal column surface, improves the reliability and the stability of semiconductor device.
For solving the problems of the technologies described above, the invention provides a kind of method for cleaning wafer, comprising: a wafer is provided; Utilize hot deionized water to wash described wafer, wherein said hot deionized water has preset temperature, and described preset temperature is between 50 ℃ to 99 ℃; And dry described wafer.
Optionally, dry described wafer comprises: utilize the described wafer of blowing inert gas, wherein said inert gas is a nitrogen, and the temperature of described inert gas is between 30 ℃ to 60 ℃.
Use hairbrush to clean described wafer when optionally, utilizing hot deionized water to wash described wafer.
Optionally, described crystal column surface has pollutant, and described pollutant is a kind of or its combination in particle, organic compound or the metal impurities.
Compared with prior art, the present invention has the following advantages:
1, method for cleaning wafer provided by the present invention, utilize hot deionized water (Hot De-ionized WaterMist, HDWM) flushing wafer, because described hot deionized water has higher temperature, so it has higher molecular kinetic energy, can effectively destroy the adhesiveness of pollutant and crystal column surface, the dynamics that adds great purge, and the raising particle removal efficiency (Particle Removal Efficiency, PRE), reach splendid cleaning performance, and then improve the reliability and the stability of semiconductor device.
2, method for cleaning wafer provided by the present invention, technology is simple, does not introduce new chemical reagent, can not bring any side effect to semiconductor device.
3, the present invention utilizes the higher hot nitrogen of temperature to come dry wafer, can accelerate the rate of drying of wafer, effectively shortens the drying time of wafer, has improved production efficiency.
Description of drawings
Fig. 1 is the flow chart of the method for cleaning wafer that one embodiment of the invention provided;
Fig. 2 is for adopting the cleaning process schematic diagram of the cleaning method that one embodiment of the invention provided.
Embodiment
For purpose of the present invention, feature are become apparent, the specific embodiment of the present invention is further described below in conjunction with accompanying drawing.It should be noted that accompanying drawing all adopts very the form of simplifying and all uses non-ratio accurately, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
In background technology, mention, existing method for cleaning wafer is the deionized water rinsing wafer that utilizes room temperature, the temperature of common described deionized water is less than 25 ℃, because the molecular kinetic energy of the deionized water of described room temperature is less, so not enough for some with the removal dynamics of the stronger pollutant of crystal column surface adhesion property, therefore, when the cleaning process end of reality, still residual on the surface of wafer have a large amount of pollutants, had a strong impact on the reliability and the stability of semiconductor device.
Core concept of the present invention is, a kind of method for cleaning wafer is provided, and it can effectively remove the pollutant of crystal column surface, improves the reliability and the stability of semiconductor device, and can not bring any side effect to semiconductor device.
Please refer to Fig. 1, it is the flow chart of the method for cleaning wafer that one embodiment of the invention provided, and in conjunction with this figure, the method comprising the steps of:
Step S10 provides a wafer.
Step S20 utilizes hot deionized water to wash described wafer, and wherein said hot deionized water has preset temperature, and described preset temperature is between 50 ℃ to 99 ℃.
Step S30, dry described wafer.
Wherein, described crystal column surface has pollutant, and described pollutant is a kind of or its combination in particle, organic compound or the metal impurities.
Optionally, dry described wafer comprises: utilize the described wafer of blowing inert gas, described inert gas is a nitrogen, and the temperature of described inert gas is between 30 ℃ to 60 ℃.
Method for cleaning wafer provided by the present invention, only cleaning process has been carried out less improvement, do not introduced new chemical reagent, can not bring any side effect semiconductor device, but can reach splendid cleaning performance, improve the reliability and the stability of semiconductor device.
To be described in more detail method for cleaning wafer of the present invention below, wherein represent the preferred embodiments of the present invention, and should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
Please refer to Fig. 2, at first, wafer to be cleaned 100 is put on the wafer carrying platform 200 of cleaning machine, described cleaning machine can be rotary-type board, the DNS-SU3000 board that for example Japanese SCREEN company produces, described rotary-type board can provide automation one chip manufacturing process for cleaning.
Wherein, can be formed with material layer 110 on the wafer 100, the material of described material layer 110 comprises electric conducting material, dielectric material etc., and described electric conducting material can be polysilicon, copper, aluminium or other metal etc., and described dielectric material can be silica, silicon nitride or silicon oxynitride.Described material layer 110 can form by modes such as chemical vapour deposition (CVD) or physical vapour deposition (PVD)s.And in the process that forms material layer 110, a lot of pollutants 120 can be adhered in the surface of wafer 100.In general, described pollutant 120 can be a kind of or its combination in particle (Particle), organic compound or the metal impurities.
Then, provide hot deionized water to wafer 100 surfaces to wash described wafer 100.Detailed, in this step, nozzle 300 is moved to wafer 100 tops, described hot deionized water is sprayed to wafer 100 surfaces by liquid line 400 through nozzle 300, wafer carrying platform 200 drives wafer 100 rotations simultaneously, centrifugal force by rotation is produced makes hot deionized water be covered with whole wafer 100 surfaces.Certainly, in other embodiment of the present invention, according to concrete technological requirement, it is static that wafer carrying platform 200 also can keep.
Wherein, described hot deionized water has preset temperature, the preset temperature of described hot deionized water is between 50 ℃ to 99 ℃, therefore, described hot deionized water has higher molecular kinetic energy, than traditional cleaning method, improved the dynamics of cleaning, the adhesiveness on havoc pollutant 120 and wafer 100 surfaces greatly, remove the pollutant 120 on the wafer 100 rapidly and effectively, especially for being attached to wafer 100 lip-deep particle (particle) removal effect the bests, improved greatly particle removal efficiency (Particle RemovalEfficiency, PRE).Certainly, for residuing in pollutants such as wafer 100 lip-deep organic compounds and metal impurities, utilize the cleaning performance of hot deionized water also very obvious.Preferably, the preset temperature of described hot deionized water is 65 ℃, and this preset temperature can guarantee splendid cleaning performance, can avoid the technical process control difficulty that causes owing to the deionized water temperature is too high again.
Preferable, when using described thermion water flushing wafer 100, can use banister brush to clean described wafer 100 surfaces, to have improved particle removal efficiency.
At last, utilize gas piping 500 with blowing inert gas to wafer 100 surfaces, to remove the washmarking on wafer 100 surfaces, prevent that airborne oxygen and hot deionized water are reflected at wafer 100 surface and form weak acid.Preferably, the temperature of described nitrogen is between 30 ℃ to 60 ℃.The present invention utilizes the higher hot nitrogen of temperature to come dry wafer 100, can accelerate the rate of drying of wafer 100, effectively shortens the drying time of wafer 100, has improved production efficiency.
In sum, method for cleaning wafer provided by the present invention comprises the steps: to provide a wafer; Utilize hot deionized water to wash described wafer, wherein said hot deionized water has preset temperature, and described preset temperature is between 50 ℃ to 99 ℃; And dry described wafer.The present invention utilizes hot deionized water flushing wafer, because described hot deionized water has higher temperature, therefore it has higher molecular kinetic energy, can destroy the adhesiveness of pollutant and crystal column surface, improve particle removal efficiency, reached splendid cleaning performance, and do not introduced new chemical reagent, can not bring any side effect, and can enhance productivity semiconductor device.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (8)
1. a method for cleaning wafer is characterized in that, comprising:
One wafer is provided;
Utilize hot deionized water to wash described wafer, wherein said hot deionized water has preset temperature, and described preset temperature is between 50 ℃ to 99 ℃; And
Dry described wafer.
2. method for cleaning wafer as claimed in claim 1 is characterized in that, the preset temperature of described hot deionized water is 65 ℃.
3. method for cleaning wafer as claimed in claim 1 is characterized in that, dry described wafer comprises:
Utilize the described wafer of blowing inert gas.
4. method for cleaning wafer as claimed in claim 3 is characterized in that, described inert gas is a nitrogen.
5. method for cleaning wafer as claimed in claim 3 is characterized in that, the temperature of described inert gas is between 30 ℃ to 60 ℃.
6. method for cleaning wafer as claimed in claim 1 is characterized in that, uses hairbrush to clean described wafer when utilizing hot deionized water to wash described wafer.
7. method for cleaning wafer as claimed in claim 1 is characterized in that described crystal column surface has pollutant.
8. method for cleaning wafer as claimed in claim 7 is characterized in that, described pollutant is a kind of or its combination in particle, organic compound or the metal impurities.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100545835A CN101944476A (en) | 2009-07-09 | 2009-07-09 | Wafer washing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009100545835A CN101944476A (en) | 2009-07-09 | 2009-07-09 | Wafer washing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101944476A true CN101944476A (en) | 2011-01-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2009100545835A Pending CN101944476A (en) | 2009-07-09 | 2009-07-09 | Wafer washing method |
Country Status (1)
| Country | Link |
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| CN (1) | CN101944476A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319692A (en) * | 2011-07-04 | 2012-01-18 | 常州天合光能有限公司 | Cleaning machine for drying silicon chips by using pure water |
| CN108372162A (en) * | 2018-02-27 | 2018-08-07 | 宿宏 | A kind of separation gel blocks the processing method of medical laboratory's testing instruments Measurement channel |
| CN111986982A (en) * | 2019-05-21 | 2020-11-24 | 睿明科技股份有限公司 | Method for cleaning a substrate surface |
| CN119275139A (en) * | 2024-12-09 | 2025-01-07 | 北京华林嘉业科技有限公司 | Wafer cleaning and drying equipment and process |
-
2009
- 2009-07-09 CN CN2009100545835A patent/CN101944476A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102319692A (en) * | 2011-07-04 | 2012-01-18 | 常州天合光能有限公司 | Cleaning machine for drying silicon chips by using pure water |
| CN108372162A (en) * | 2018-02-27 | 2018-08-07 | 宿宏 | A kind of separation gel blocks the processing method of medical laboratory's testing instruments Measurement channel |
| CN111986982A (en) * | 2019-05-21 | 2020-11-24 | 睿明科技股份有限公司 | Method for cleaning a substrate surface |
| CN119275139A (en) * | 2024-12-09 | 2025-01-07 | 北京华林嘉业科技有限公司 | Wafer cleaning and drying equipment and process |
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| PB01 | Publication | ||
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Application publication date: 20110112 |