CN101976949B - Anti-interference rapid current sampling circuit based on difference structure - Google Patents
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Abstract
本发明提出了一种基于差分结构的快速抗干扰电流采样电路,包括差分采样主体电路和偏置电压产生电路,通过偏置电压产生出两个不同的电压给采样主体电路中的共栅极晶体管,差分采样的主体电路输出信号即是控制整个环路或者过流保护电路的抗干扰采样信号。本发明可以有效滤除电源自身或者多路DC-DC开关动作时带来的干扰,这种抗干扰的结构不仅可以用于过流保护电路实现精确的控制,还可以应用到电流模式的DC-DC环路中实现稳定的环路控制。
The present invention proposes a fast anti-interference current sampling circuit based on a differential structure, including a differential sampling main circuit and a bias voltage generating circuit, and two different voltages are generated by the bias voltage to the common gate transistor in the sampling main circuit , the output signal of the main circuit of the differential sampling is the anti-interference sampling signal that controls the entire loop or the overcurrent protection circuit. The present invention can effectively filter out the interference caused by the power supply itself or the multi-channel DC-DC switch action. This anti-interference structure can not only be used for precise control of the overcurrent protection circuit, but also can be applied to the current mode DC-DC Stable loop control is achieved in the DC loop.
Description
技术领域 technical field
本发明涉及开关电源领域,应用于电压模直流直流变换器(DC-DC)的过流保护电路以及电流模DC-DC转换器电流控制环路中,特别涉及集成电路中基于差分结构的快速抗干扰电流采样电路。The invention relates to the field of switching power supplies, and is applied to the overcurrent protection circuit of a voltage-mode DC-DC converter (DC-DC) and the current control loop of a current-mode DC-DC converter, in particular to a fast anti-corrosion circuit based on a differential structure in an integrated circuit. Interfering with the current sampling circuit.
背景技术 Background technique
电源管理芯片是电子产品的一个重要组成部分,电源管理芯片质量直接影响了电子设备的性能。随着手机、PDA、数码相机和MP3播放器等便携式设备功能日益多样化,研究开发高效率的微型化DC-DC变换器成为这个领域的主流方向。电流采样不仅可以用作电压模DC-DC过流保护电路当中,也是电流模DC-DC环路中的重要组成部分,影响着电流模DC-DC的性能。一方面当电源线上存在干扰时(例如开关管开关动作时或是多路DC-DC中的其他路开关管开关动作时)采样出的信号也存在干扰,当干扰量较为显著时会导致比较器的误翻转,进而使控制逻辑混乱或者使过温保护电路错误关断芯片;另一方面,采样电路的速度限制了DC-DC工作频率。Power management chips are an important part of electronic products, and the quality of power management chips directly affects the performance of electronic devices. With the increasingly diversified functions of portable devices such as mobile phones, PDAs, digital cameras and MP3 players, research and development of high-efficiency miniaturized DC-DC converters has become the mainstream direction in this field. Current sampling can not only be used in the voltage mode DC-DC overcurrent protection circuit, but also an important part of the current mode DC-DC loop, which affects the performance of the current mode DC-DC. On the one hand, when there is interference on the power line (for example, when the switching tube is switched or other switching tubes in the multi-channel DC-DC are switched), the sampled signal also has interference. When the amount of interference is significant, it will lead to comparison The wrong flip of the device will cause the control logic to be confused or the over-temperature protection circuit to shut down the chip by mistake; on the other hand, the speed of the sampling circuit limits the DC-DC operating frequency.
目前针对采样抗干扰问题的研究还比较少,文献1中涉及的传统的电流采样电路虽然结构简单,速度比较快,但是抗干扰能力比较差,不适合应用在多路DC-DC中。At present, there are relatively few studies on sampling anti-interference problems. Although the traditional current sampling circuit involved in Document 1 has a simple structure and relatively fast speed, its anti-interference ability is relatively poor, and it is not suitable for application in multi-channel DC-DC.
【文献1】Kuo-Hsing Cheng;Chia-Wei Su;Hsin-Hsin Ko.AHigh-Accuracy and High-Efficiency on-Chip Current Sensing for Current-ModeControl CMOS DC-DC Buck Converter,Electronics,Circuits and Systems,2008.ICECS 2008.15th IEEE International Conference on[Document 1] Kuo-Hsing Cheng; Chia-Wei Su; Hsin-Hsin Ko.A High-Accuracy and High-Efficiency on-Chip Current Sensing for Current-ModeControl CMOS DC-DC Buck Converter, Electronics, Circuits and Systems, 2008. ICECS 2008.15th IEEE International Conference on
发明内容 Contents of the invention
本发明为了克服上述现有技术的不足,提供一种基于差分结构的快速、抗干扰电流采样电路,该电路结构简单,抗干扰能力强,采样速度快,不同温度、工艺和电源电压的变化对其影响较小。In order to overcome the shortcomings of the above-mentioned prior art, the present invention provides a fast and anti-interference current sampling circuit based on a differential structure. The circuit has a simple structure, strong anti-interference ability, and fast sampling speed. Its impact is small.
本发明的技术方案是这样实现的:Technical scheme of the present invention is realized like this:
基于差分结构的快速抗干扰电流采样电路,其特征在于:所述的采样电路包括差分采样主体电路和偏置电压产生电路,通过偏置电压产生电路产生出两个不同的电压给采样主体电路的中的共栅极晶体管提供栅极电压偏置,差分采样的主体电路输出信号即是可以用于控制整个环路或者过流保护电路的抗干扰采样信号。A fast anti-interference current sampling circuit based on a differential structure, characterized in that: the sampling circuit includes a differential sampling main circuit and a bias voltage generating circuit, and the bias voltage generating circuit generates two different voltages for the sampling main circuit The common gate transistor in the circuit provides gate voltage bias, and the output signal of the main circuit of differential sampling is the anti-interference sampling signal that can be used to control the entire loop or the overcurrent protection circuit.
所述的差分采样主体电路,由输入电源的高电位连接PMOS管Mp的源极,PMOS管Mp的漏极连接在NMOS管Mn的漏极,NMOS管Mn的源极连接在输入电源低电位上;PMOS管Mp和NMOS管Mn的连接点上再连接滤波电路,滤波电路连接负载电阻R;PMOS管Mp的源极连接PMOS管M8,PMOS管M8的栅极连接电源低电位,PMOS管M8的漏极接PMOS管M1的源端,PMOS管M1的漏极连接PMOS管M3的源极,PMOS管M3采用二极管连接方法,栅极和漏极共同连接到电源低电位上;PMOS管Mp的漏极连接PMOS管M9,PMOS管M9的栅极接第一个控制信号,M9的漏极连接PMOS管M2的源极,PMOS管M2的漏极连接PMOS管M4的源极,PMOS管M4采用二极管连接方法,栅极和漏极共同连接到电源低电位上;PMOS管MP的栅极连接第二个控制信号,NMOS管Mn的栅极连接第三个控制信号;PMOS管Mpx1的源极连接输入电源高电位,PMOS管Mpx1的漏极连接PMOS管M2的漏极,PMOS管Mpx1的栅极连接第四个控制信号,PMOS管M1和M2的栅极分别连接到偏置电压Vb1和Vb2;采样信号从PMOS管M3和M4的源极差分输出;所述的滤波电路是由电感L和电容C连接构成,其中ESR是电容C的等效串联电阻。In the differential sampling main circuit, the high potential of the input power supply is connected to the source of the PMOS transistor Mp, the drain of the PMOS transistor Mp is connected to the drain of the NMOS transistor Mn, and the source of the NMOS transistor Mn is connected to the low potential of the input power supply The connection point of the PMOS transistor Mp and the NMOS transistor Mn is connected to the filter circuit, and the filter circuit is connected to the load resistor R; the source of the PMOS transistor Mp is connected to the PMOS transistor M8, the gate of the PMOS transistor M8 is connected to the low potential of the power supply, and the PMOS transistor M8 The drain is connected to the source of the PMOS transistor M1, the drain of the PMOS transistor M1 is connected to the source of the PMOS transistor M3, and the PMOS transistor M3 adopts a diode connection method, and the gate and the drain are connected to the low potential of the power supply; the drain of the PMOS transistor Mp The pole is connected to the PMOS transistor M9, the gate of the PMOS transistor M9 is connected to the first control signal, the drain of M9 is connected to the source of the PMOS transistor M2, the drain of the PMOS transistor M2 is connected to the source of the PMOS transistor M4, and the PMOS transistor M4 uses a diode Connection method, the gate and drain are connected to the low potential of the power supply; the gate of the PMOS transistor MP is connected to the second control signal, the gate of the NMOS transistor Mn is connected to the third control signal; the source of the PMOS transistor Mpx1 is connected to the input The power supply is at a high potential, the drain of the PMOS transistor Mpx1 is connected to the drain of the PMOS transistor M2, the gate of the PMOS transistor Mpx1 is connected to the fourth control signal, and the gates of the PMOS transistors M1 and M2 are respectively connected to the bias voltages V b1 and V b2 ; The sampling signal is differentially output from the sources of the PMOS transistors M3 and M4; the filter circuit is formed by connecting the inductor L and the capacitor C, wherein ESR is the equivalent series resistance of the capacitor C.
所述的偏置电压产生电路,由串联的PMOS管M7的源极连接输入电源的高电位,栅极连接电源低电位,漏极连接PMOS管M5的源端,PMOS管M5采用二极管连接方法,PMOS管M5的栅极与PMOS管M1的栅极连接为PMOS管M1提供偏置电压Vb1,在PMOS管M5的栅极和漏极的连接点和电源低电位之间连接偏置电流源Ib1;串联的PMOS管M10的源极连接输入电源的高电位,栅极连接电源低电位,漏极连接PMOS管M6的源极,PMOS管M6采用二极管连接方法,PMOS管M6的栅极与PMOS管M2的栅极连接为PMOS管M2提供偏置电压Vb2,在PMOS管M6的栅极和漏极的连接点和电源低电位之间连接偏置电流源Ib2;在PMOS管M6的源极与电源低电位之间连接一个电流源IC1。In the bias voltage generating circuit, the source of the series connected PMOS transistor M7 is connected to the high potential of the input power supply, the gate is connected to the low potential of the power supply, and the drain is connected to the source end of the PMOS transistor M5, and the PMOS transistor M5 adopts a diode connection method, The gate of the PMOS transistor M5 is connected to the gate of the PMOS transistor M1 to provide the bias voltage V b1 for the PMOS transistor M1, and the bias current source I is connected between the connection point of the gate and the drain of the PMOS transistor M5 and the low potential of the power supply. b1 ; the source of the series connected PMOS transistor M10 is connected to the high potential of the input power supply, the gate is connected to the low potential of the power supply, and the drain is connected to the source of the PMOS transistor M6, and the PMOS transistor M6 adopts a diode connection method, and the gate of the PMOS transistor M6 is connected to the PMOS transistor M6 The gate connection of the tube M2 provides the bias voltage V b2 for the PMOS tube M2, and the bias current source I b2 is connected between the connection point of the gate and the drain of the PMOS tube M6 and the low potential of the power supply; the source of the PMOS tube M6 A current source I C1 is connected between the pole and the low potential of the power supply.
所述的四个控制信号的时序是不同的,第二个控制信号的上升沿略微早于第三个控制信号,第二个控制信号的下降沿略微晚于第三个控制信号;第一个控制信号是第二个控制信号的略微延迟信号;第四个控制信号是第一个控制信号的反相信号并带有略微的延迟。The timings of the four control signals are different, the rising edge of the second control signal is slightly earlier than the third control signal, and the falling edge of the second control signal is slightly later than the third control signal; the first The control signal is a slightly delayed signal of the second control signal; the fourth control signal is the inverted signal of the first control signal with a slight delay.
本发明与现有技术相比,提供了一个抗干扰能力强,采样速度快,并且结构简单的电流采样电路,并提供了该电路应用在电压模DC-DC过流保护电路和电流模DC-DC环路中的方案。抗干扰和快速的特性使电流模DC-DC的工作频率能够进一步的提高。Compared with the prior art, the present invention provides a current sampling circuit with strong anti-interference ability, fast sampling speed and simple structure, and provides the circuit applied in voltage mode DC-DC overcurrent protection circuit and current mode DC-DC Scheme in DC loop. The anti-interference and fast characteristics enable the operating frequency of the current mode DC-DC to be further improved.
附图说明 Description of drawings
图1为基于差分结构的快速抗干扰电流采样电路原理图;Figure 1 is a schematic diagram of a fast anti-interference current sampling circuit based on a differential structure;
图2为基于差分结构的快速抗干扰电流采样电路应用在过流保护功能中的电路原理图;Figure 2 is a circuit schematic diagram of a fast anti-interference current sampling circuit based on a differential structure applied in an overcurrent protection function;
图3为基于差分结构的快速抗干扰电流采样电路应用在电流模DC-DC环路中的电路原理图;Fig. 3 is a circuit schematic diagram of a fast anti-interference current sampling circuit based on a differential structure applied in a current mode DC-DC loop;
具体实施方式 Detailed ways
下面结合附图对本发明的内容作进一步说明。The content of the present invention will be further described below in conjunction with the accompanying drawings.
参照图1所示,基于差分结构的快速抗干扰电流采样电路的基本原理是开始采样时PMOS管Mp栅极的控制信号Q_p首先变低,PMOS管M9栅极的控制信号Q_p_2稍晚于Q_p变低以避免采样信号过冲,PMOS管Mpx栅极的控制信号Q_z变高,Mpx关断;此时PMOS管M8和M9处在线性区,M8的电阻为R_M8,M9的电阻为R_M9;暂不考虑沟道长度调制效应可得到以下关系:As shown in Figure 1, the basic principle of the fast anti-interference current sampling circuit based on the differential structure is that the control signal Q_p of the gate of the PMOS transistor Mp first becomes low when sampling starts, and the control signal Q_p_2 of the gate of the PMOS transistor M9 changes slightly later than Q_p. low to avoid sampling signal overshoot, the control signal Q_z of the gate of the PMOS transistor Mpx becomes high, and Mpx is turned off; at this time, the PMOS transistors M8 and M9 are in the linear region, the resistance of M8 is R_M8, and the resistance of M9 is R_M9; Considering the effect of channel length modulation, the following relationship can be obtained:
(1)(1)
(2)(2)
由于Id1和Id2很小故可将以上等式近似为:Since I d1 and I d2 are very small, the above equation can be approximated as:
(3)(3)
(4)(4)
两式分别开根号之后两端同时相减,并取After the two formulas are opened with the square root sign respectively, both ends are subtracted at the same time, and take
(W/L)1=(W/L)2,(W/L)2=(W/L)4 (W/L) 1 = (W/L) 2 , (W/L) 2 = (W/L) 4
可得:Available:
VM-VN=K(Vx-Vy)V M -V N =K(V x -V y )
(5)(5)
其中
Mp的源漏极都存在着较大的寄生电容,而电源高电位到Mp的连线上存在寄生电感,并且连线上有电阻存在,当Mp开关动作时,电源高电位上的信号会呈现阻尼震荡,由于Mp的尺寸很大,故电阻值较小,在Mp的源漏两端仅仅存在直流上的压降,而两端的信号相位差很小,Mp源漏两端的电压差近似为一个无震荡的值即ΔV,ΔV=RMp×IL,这个差值经过M1,M2,M3,M4组成的放大网络从M和N两点输出,M点和N点的电压差值为Mp源漏两端的电压差的K倍,这个差值即是电感电流的无干扰采样信号,即:There is a large parasitic capacitance at the source and drain of Mp, and there is a parasitic inductance on the connection from the high potential of the power supply to Mp, and there is a resistance on the connection. When the switch of Mp is activated, the signal on the high potential of the power supply will appear Damping oscillation, due to the large size of Mp, the resistance value is small, there is only a DC voltage drop across the source and drain of Mp, and the signal phase difference between the two ends is very small, the voltage difference between the source and drain of Mp is approximately one The value without oscillation is ΔV, ΔV=R Mp ×I L , this difference is output from two points M and N through the amplification network composed of M1, M2, M3, and M4, and the voltage difference between point M and point N is Mp source K times the voltage difference across the drain, this difference is the undisturbed sampling signal of the inductor current, namely:
VM-VN=K×RMp×IL V M -V N =K× RMp ×I L
(6)(6)
在Mp两端到输出两端的之间的路径仅仅存在两个晶体管,这使得信号通路上的结点较少,对应的极点较少,相位裕度充足;并且RC较小故采样的速度很快。There are only two transistors in the path between the two ends of Mp and the two ends of the output, which makes the signal path have fewer nodes, fewer corresponding poles, and sufficient phase margin; and the RC is small, so the sampling speed is fast .
参照图2所示,对图1所示的相同部分用同一符号表示,和图1相比,串联的PMOS管M7的源极连接输入电源的高电位,栅极连接电源低电位,漏极接PMOS管M5的源极,M7工作在线性区;M5采用二极管连接方法,M5的栅极与M1的栅极连接在一起为M1提供偏置电压Vb1;在M5的栅极和漏极的连接点和电源低电位之间连接偏置电流源Ib1;串联的PMOS管M10的源极连接输入电源的高电位,栅极接电源低电位,漏极连接PMOS管M6的源极,M10工作在线性区;M6采用二极管连接方法,M6的栅极与M2的栅极连接为M2提供偏置电压Vb2,在M6的栅极和漏极的连接点和电源低电位之间连接偏置电流源Ib2,要求Ib1=Ib2;在M点连接比较器CP的同相输入端,在N点连接CP的反相输入端,并在M6的源极与电源低电位之间连接一个流向电源低电位的恒定电流源IC1,当连接IC1之后,Vb1≠Vb2,类比基本结构可得到以下关系:Referring to FIG. 2, the same parts shown in FIG. 1 are represented by the same symbols. Compared with FIG. 1, the source of the series-connected PMOS transistor M7 is connected to the high potential of the input power supply, the gate is connected to the low potential of the power supply, and the drain is connected to the low potential of the power supply. The source of PMOS tube M5, M7 works in the linear region; M5 adopts the diode connection method, the gate of M5 is connected with the gate of M1 to provide bias voltage V b1 for M1; the connection between the gate and drain of M5 The bias current source I b1 is connected between the point and the low potential of the power supply; the source of the series connected PMOS transistor M10 is connected to the high potential of the input power supply, the gate is connected to the low potential of the power supply, and the drain is connected to the source of the PMOS transistor M6, and M10 works online M6 uses a diode connection method, the gate of M6 is connected to the gate of M2 to provide a bias voltage V b2 for M2, and the bias current source is connected between the connection point of the gate and drain of M6 and the low potential of the power supply I b2 , requires I b1 =I b2 ; connect the non-inverting input terminal of the comparator CP at point M, connect the inverting input terminal of CP at point N, and connect a current flow to the low potential of the power supply between the source of M6 and the low potential of the power supply The potential constant current source I C1 , when I C1 is connected, V b1 ≠ V b2 , the following relationship can be obtained by analogy with the basic structure:
(7)(7)
(8)(8)
利用推导基本结构时所用到的近似和晶体管比例关系,可得到:Using the approximations and transistor scaling used in deriving the basic structure, we get:
VM-VN=K(Vx-Vy)-K(Vb1-Vb2)V M -V N =K(V x -V y )-K(V b1 -V b2 )
(9)(9)
其中Vb2比Vb1低IC1×RM10;电感电流增加使N点的电压降低,当N点的电压低至与M点相同时比较器就会翻转,即:Among them, V b2 is lower than V b1 by I C1 × R M10 ; the increase of inductor current reduces the voltage of point N, and when the voltage of point N is as low as that of point M, the comparator will flip over, that is:
Vx-Vy=Vb1-Vb2 (10)V x -V y =V b1 -V b2 (10)
IL×RMp=IC1×RM10 I L ×R Mp =I C1 ×R M10
(11)(11)
通过设置IC1的值来设置过流保护的阈值,当电感电流增大到使比较器翻转时,比较器输出控制开关进行关断动作从而实现过流保护的功能。The threshold of overcurrent protection is set by setting the value of I C1 . When the inductor current increases to the point where the comparator is reversed, the comparator output controls the switch to turn off to realize the function of overcurrent protection.
参照图3所示,对图2所示的相同部分用同一符号表示。和图2相比,图3在Vout处串联的反馈电阻R1和R2,连接在R1和R2之间的结点作为EA的反相输入端,Vref作为EA的同相输入端,EA的输出连接补偿网络之后再连接到一个电压到电流的转换器v to i,同时斜坡补偿电压Ramp Signal也接到一个v to i,这两部分电流之和通过电流镜像提供IC2,IC2连接在M6源极到电源低电位之间,M点和N点连接比较器CMP,CMP的输出端连接脉冲产生模块Pulse Width Generator的输入,Pulse Width Generator的输出经由缓冲器Buffer控制Mp、Mn、Mpx、M9的栅极,当M点和N点的电压相等时比较器翻转输出控制信号控制开关管的动作,从而实现电流模DC-DC的电流环路的控制作用。Referring to FIG. 3, the same parts shown in FIG. 2 are denoted by the same symbols. Compared with Figure 2, in Figure 3, feedback resistors R1 and R2 are connected in series at Vout, the node connected between R1 and R2 is used as the inverting input terminal of EA, Vref is used as the non-inverting input terminal of EA, and the output of EA is connected to the compensation The network is then connected to a voltage-to-current converter v to i, and the slope compensation voltage Ramp Signal is also connected to a v to i. The sum of the two parts of the current provides I C2 through the current mirror, and I C2 is connected to the source of M6. Between the low potential of the power supply, the M point and the N point are connected to the comparator CMP, the output of the CMP is connected to the input of the pulse generation module Pulse Width Generator, and the output of the Pulse Width Generator controls the gates of Mp, Mn, Mpx, and M9 through the buffer Buffer pole, when the voltages of point M and point N are equal, the comparator reverses and outputs a control signal to control the action of the switch tube, thereby realizing the control function of the current mode DC-DC current loop.
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| US9817039B2 (en) * | 2011-09-29 | 2017-11-14 | Monolithic Power Systems, Inc. | Methods for sensing current in a switching regulator |
| CN108957102B (en) * | 2018-08-28 | 2024-03-08 | 长沙理工大学 | Current detection circuit without operational amplifier |
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| WO2007000387A1 (en) * | 2005-06-28 | 2007-01-04 | E2V Semiconductors | Current switch with differential transistor pairs fed by a low voltage |
| CN101047383A (en) * | 2007-03-20 | 2007-10-03 | 湖南大学 | Current controlled full-balance differential current transmitter |
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| CN101640475A (en) * | 2009-09-04 | 2010-02-03 | 西安交通大学 | Anti-interference current sample circuit based on cancellation method |
| CN101840241A (en) * | 2010-03-30 | 2010-09-22 | 北京中星微电子有限公司 | Differential current sampling circuit and linear voltage regulator |
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| WO2007000387A1 (en) * | 2005-06-28 | 2007-01-04 | E2V Semiconductors | Current switch with differential transistor pairs fed by a low voltage |
| CN101047383A (en) * | 2007-03-20 | 2007-10-03 | 湖南大学 | Current controlled full-balance differential current transmitter |
| CN201113493Y (en) * | 2007-07-06 | 2008-09-10 | 深圳市比克电池有限公司 | A battery voltage sampling circuit |
| CN101192827A (en) * | 2007-12-05 | 2008-06-04 | 来新泉 | A comparator with multiple logic function |
| CN101640475A (en) * | 2009-09-04 | 2010-02-03 | 西安交通大学 | Anti-interference current sample circuit based on cancellation method |
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