CN101989811B - Rectifier circuit, label circuit and chip for high-frequency radio frequency identification device (RFID) label - Google Patents
Rectifier circuit, label circuit and chip for high-frequency radio frequency identification device (RFID) label Download PDFInfo
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- CN101989811B CN101989811B CN200910057733A CN200910057733A CN101989811B CN 101989811 B CN101989811 B CN 101989811B CN 200910057733 A CN200910057733 A CN 200910057733A CN 200910057733 A CN200910057733 A CN 200910057733A CN 101989811 B CN101989811 B CN 101989811B
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Abstract
The invention discloses a rectifier circuit for a high-frequency radio frequency identification device (RFID) label. In the circuit, a plurality of resistors and NMOS tube M3s are connected in series between a first end and a second end of an antenna; the drain electrode of an NMOS tube M1 is connected with the first end of the antenna; the drain electrode of an NMOS tube M2 is connected with the second end of the antenna; two intrinsic transistors M4 and M5 are connected in series between grids of the NMOS tubes M1 and M2, and adopt a diode connecting method; and a node between the intrinsic transistors M4 and M5 is used as an output end of a rectifier. The invention discloses a high-frequency RFID label circuit, comprising the rectifier circuit of the high-frequency RFID label. The invention also discloses a high-frequency RFID label circuit chip, comprising the high-frequency RFID label circuit. By adopting the intrinsic transistors, while the high-frequency RFID label circuit can endure high voltage, the circuit cost is reduced, the higher sensitivity is provided, and the induction distance of RFID is increased.
Description
Technical field
The present invention relates to a kind of rectifier circuit, especially a kind of rectifier circuit of high-frequency RF ID label.The invention still further relates to the tag circuit of a kind of high-frequency RF ID.The invention still further relates to a kind of high-frequency RF ID tag circuit chip.
Background technology
High frequency passive RFID label (13.56MHz) comprises antenna, AFE(analog front end), digital processing part and memory cell.From design aspect; Because label is passive; Be internal circuit institute energy requirement all from and card reader antenna between coupling; And convert the alternating current that is coupled to the supply voltage of direct current to as inner other module through rectifier, therefore require the RFID label to possess low-power consumption, internal stability power supply and bigger characteristics such as dynamic range.
When magnetic field intensity is higher, on the RFID label antenna, can respond to alternating voltage, and partial circuit possibly adopt the manufacturing of low pressure manufacturing process because needing EEPROM among the RFID up to tens to 20 volts.Be generally high pressure resistant, need the rectifier device of 20 volts extra device as AFE(analog front end), this has increased cost greatly.
In addition, the MOS device that existing high-frequency RF ID tag circuit is adopted makes that the sensitivity of circuit is very limited, and the distance of reaction of RFID also can't improve.
Summary of the invention
Technical problem to be solved by this invention provides a kind of rectifier circuit of high-frequency RF ID label; A kind of high-frequency RF ID tag circuit; And a kind of high-frequency RF ID tag circuit chip, make high-frequency RF ID tag circuit can bear the high-tension while, reduce the cost of circuit; And have higher sensitivity, increase the distance of reaction of RFID.
For solving the problems of the technologies described above, the technical scheme of the rectifier circuit of high-frequency RF ID label of the present invention is, between first end of antenna and second end, is in series with resistance R 1, resistance R 3, resistance R 4, NMOS pipe M3, resistance R 5, resistance R 6 and resistance R 2 successively; The drain electrode of NMOS pipe M3 connects resistance R 4, and source electrode connects resistance R 5, and grid is as the VG input; The drain electrode of NMOS pipe M1 connects first end of antenna, and grid is connected between resistance R 2 and the R6; The drain electrode of NMOS pipe M2 connects second end of antenna, and grid is connected between resistance R 1 and the R3; The source electrode of NMOS pipe M1 and M2 is ground connection all; Two intrinsic transistor M4 and M5 also connect between the grid of said NMOS pipe M1 and M2; Said intrinsic transistor adopts diode; The grid of intrinsic transistor M4 is connected to the grid of NMOS pipe M2, and the grid of intrinsic transistor M5 is connected to the grid of NMOS pipe M1, and the node between intrinsic transistor M4 and the M5 is as the output of rectifier; Respectively be connected a diode, the plus earth of said diode between the two ends of said antenna and the ground.
The present invention also provides a kind of high-frequency RF ID tag circuit, and its technical scheme is to comprise the rectifier circuit of above-mentioned RFID label in the said high-frequency RF ID tag circuit.
The present invention also provides a kind of high-frequency RF ID tag circuit chip, and its technical scheme is that said chip comprises above-mentioned RFID tag circuit.
The present invention makes high-frequency RF ID tag circuit can bear the high-tension while through having adopted intrinsic transistor, has reduced the cost of circuit, and has had higher sensitivity, has increased the distance of reaction of RFID.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is done further detailed explanation:
Accompanying drawing is the circuit diagram of the rectifier circuit of high-frequency RF ID label of the present invention.
Embodiment
The invention provides a kind of rectifier circuit of high-frequency RF ID label; Shown in accompanying drawing, between the first end Antenna1 of antenna and the second end Antenna2, be in series with resistance R 1, resistance R 3, resistance R 4, NMOS pipe M3, resistance R 5, resistance R 6 and resistance R 2 successively; The drain electrode of NMOS pipe M3 connects resistance R 4, and source electrode connects resistance R 5, and grid is as the VG input; The VG signal is realized the back emitted of rectifier signals.VG is a logical signal, is respectively high and low.When logic when low, M3 ends, antenna ends voltage is not influenced by VG, is equivalent to experience on the card reader antenna logic high.As VG when being high, the M3 conducting, antenna ends is through R3, R4, R5, R6 short circuit, and antenna ends obtains a common-mode voltage, is equivalent to experience on the card reader antenna logic low, has realized the communication function of rectifier circuit thus.The drain electrode of NMOS pipe M1 connects first end of antenna, and grid is connected between resistance R 2 and the R6; The drain electrode of NMOS pipe M2 connects second end of antenna, and grid is connected between resistance R 1 and the R3; The source electrode of NMOS pipe M1 and M2 is ground connection all; Two intrinsic transistor M4 and M5 also connect between the grid of said NMOS pipe M1 and M2; Said intrinsic transistor adopts diode; The grid of intrinsic transistor M4 is connected to the grid of NMOS pipe M2, and the grid of intrinsic transistor M5 is connected to the grid of NMOS pipe M1, and the node between intrinsic transistor M4 and the M5 is as the output of rectifier; Respectively be connected a diode, the plus earth of said diode between the two ends of said antenna and the ground.
Be connected with an electric capacity between the output of said rectifier and the ground.
Among the present invention, the high voltage bearing performance that the manufacturing process of the intrinsic transistor that is adopted itself has just had has the low characteristics of threshold voltage.The sensitivity that the threshold voltage that has reduced can improve rectifier circuit.For example; The threshold voltage of traditional M OS device is generally at 0.5～0.7V; And the threshold voltage of the intrinsic transistor that the present invention adopted only is 0.2V, and this makes littler voltage can let rectifier produce output, thus the sensitivity that has improved rectifier circuit.
High-frequency RF ID label rectifier circuit shown in the accompanying drawing be with two half-wave rectifying circuits combine through antenna (antenna1 and antenna2) with alternating voltage induced under the control of intrinsic transistor M4 and M5, in turn conducting in positive and negative half period.When on Antenna1, being positive half cycle, alternating voltage produces a unidirectional output voltage through the intrinsic transistor M4 of the diode connected mode of R1 and forward conduction; When on Antenna12, being positive half cycle, alternating voltage produces a same unidirectional output voltage through the intrinsic transistor M5 of the diode connected mode of R2 and forward conduction, accomplishes full-wave rectification.
The present invention also provides a kind of high-frequency RF ID tag circuit, comprises the rectifier circuit of above-mentioned high-frequency RF ID label in this high-frequency RF ID tag circuit.Because the distance of reaction of high-frequency RF ID tag circuit is inversely proportional to the voltage of being sensed, promptly distance of reaction is far away more, and the voltage of being sensed is just more little.In the present invention, because intrinsic transistor has reduced the threshold voltage of rectifier circuit, will directly increase the distance of reaction of high-frequency RF ID tag circuit thus.
The present invention also provides a kind of high-frequency RF ID tag circuit chip, comprising above-mentioned high-frequency RF ID tag circuit.
The present invention adopts this device to reach the full-wave rectification function of high speed rectification, and this design need not special device fabrication steps and extra photoetching level, has the parasitic capacitance features of smaller simultaneously, thereby realizes at a high speed, high efficiency rectifier design.
In sum, the present invention makes high-frequency RF ID tag circuit can bear the high-tension while through having adopted intrinsic transistor, has reduced the cost of circuit, and has had higher sensitivity, has increased the distance of reaction of RFID.
Claims (4)
1.
OneThe rectifier circuit of kind of high-frequency RF ID label is characterized in that, between first end of antenna and second end, is in series with resistance R 1, resistance R 3, resistance R 4, NMOS successively and manages M3, resistance R 5, resistance R 6 and resistance R 2; The drain electrode of NMOS pipe M3 connects resistance R 4, and source electrode connects resistance R 5, and grid is as the VG input, and said VG is a logical signal, is respectively high and low; The drain electrode of NMOS pipe M1 connects first end of antenna, and grid is connected between resistance R 2 and the R6; The drain electrode of NMOS pipe M2 connects second end of antenna, and grid is connected between resistance R 1 and the R3; The source electrode of NMOS pipe M1 and M2 is ground connection all; Two intrinsic transistor M4 and M5 also connect between the grid of said NMOS pipe M1 and M2; Said intrinsic transistor adopts diode; The grid of intrinsic transistor M4 is connected to the grid of NMOS pipe M2, and the grid of intrinsic transistor M5 is connected to the grid of NMOS pipe M1, and the node between intrinsic transistor M4 and the M5 is as the output of rectifier; Respectively be connected a diode, the plus earth of said diode between the two ends of said antenna and the ground; Said NMOS pipe M3 is controlled by VG, when logic when low, M3 ends; As VG when being high, the M3 conducting.
2. the rectifier circuit of RFID label according to claim 1 is characterized in that, is connected with an electric capacity between the output of said rectifier and the ground.
3. a high-frequency RF ID tag circuit is characterized in that, comprises the rectifier circuit of high-frequency RF ID label according to claim 1 or claim 2.
4. a high-frequency RF ID tag circuit chip is characterized in that, comprises high-frequency RF ID tag circuit as claimed in claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057733A CN101989811B (en) | 2009-08-07 | 2009-08-07 | Rectifier circuit, label circuit and chip for high-frequency radio frequency identification device (RFID) label |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910057733A CN101989811B (en) | 2009-08-07 | 2009-08-07 | Rectifier circuit, label circuit and chip for high-frequency radio frequency identification device (RFID) label |
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| Publication Number | Publication Date |
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| CN101989811A CN101989811A (en) | 2011-03-23 |
| CN101989811B true CN101989811B (en) | 2012-10-03 |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103714378B (en) * | 2014-01-08 | 2016-09-07 | 卓捷创芯科技（深圳）有限公司 | The intelligent EMS of a kind of passive RF label and energy management method |
| CN104834955B (en) * | 2015-04-20 | 2017-11-14 | 卓捷创芯科技（深圳）有限公司 | A kind of rectification and the RF front-end circuit and passive RF label of load combinations of modulation |
| FR3056794B1 (en) * | 2016-09-23 | 2019-12-20 | Eliot Innovative Solutions | IDENTIFICATION SENSOR FOR LARGE DEPTH BURIALS |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145190A (en) * | 2006-09-11 | 2008-03-19 | 英赛康特雷斯公司 | Method of connecting contactless integrated circuit with near field communication components |
| CN101393614A (en) * | 2007-09-19 | 2009-03-25 | 株式会社日立制作所 | RFID tags |
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2009
- 2009-08-07 CN CN200910057733A patent/CN101989811B/en active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101145190A (en) * | 2006-09-11 | 2008-03-19 | 英赛康特雷斯公司 | Method of connecting contactless integrated circuit with near field communication components |
| CN101393614A (en) * | 2007-09-19 | 2009-03-25 | 株式会社日立制作所 | RFID tags |
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| CN101989811A (en) | 2011-03-23 |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20140108 |
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Effective date of registration: 20140108 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |