CN102010198A - Ceramic capacitor dielectric material - Google Patents
Ceramic capacitor dielectric material Download PDFInfo
- Publication number
- CN102010198A CN102010198A CN 201010538412 CN201010538412A CN102010198A CN 102010198 A CN102010198 A CN 102010198A CN 201010538412 CN201010538412 CN 201010538412 CN 201010538412 A CN201010538412 A CN 201010538412A CN 102010198 A CN102010198 A CN 102010198A
- Authority
- CN
- China
- Prior art keywords
- dielectric material
- ceramic capacitor
- ceramic
- medium material
- percent
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000003985 ceramic capacitor Substances 0.000 title claims abstract description 14
- 239000003989 dielectric material Substances 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 27
- 239000000919 ceramic Substances 0.000 claims abstract description 18
- 239000011521 glass Substances 0.000 claims abstract description 17
- 238000000034 method Methods 0.000 claims abstract description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims abstract description 5
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 5
- 239000011701 zinc Substances 0.000 claims description 15
- 239000000843 powder Substances 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- 238000012986 modification Methods 0.000 claims description 8
- 230000004048 modification Effects 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052788 barium Inorganic materials 0.000 claims description 7
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- 229910052779 Neodymium Inorganic materials 0.000 claims description 4
- 229910052746 lanthanum Inorganic materials 0.000 claims description 4
- 239000000470 constituent Substances 0.000 claims description 3
- 229910052758 niobium Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 claims description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 abstract description 22
- 229910001316 Ag alloy Inorganic materials 0.000 abstract description 6
- 229910052763 palladium Inorganic materials 0.000 abstract description 6
- 229910001252 Pd alloy Inorganic materials 0.000 abstract description 5
- 239000003990 capacitor Substances 0.000 abstract description 2
- SHLNMHIRQGRGOL-UHFFFAOYSA-N barium zinc Chemical compound [Zn].[Ba] SHLNMHIRQGRGOL-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000004907 flux Effects 0.000 abstract 1
- 229910052861 titanite Inorganic materials 0.000 abstract 1
- 238000005245 sintering Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 5
- 238000000227 grinding Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 238000000498 ball milling Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000010298 pulverizing process Methods 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 230000004927 fusion Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000010791 quenching Methods 0.000 description 2
- 230000000171 quenching effect Effects 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Landscapes
- Inorganic Insulating Materials (AREA)
- Compositions Of Oxide Ceramics (AREA)
Abstract
The invention discloses a ceramic capacitor dielectric material, which is characterized by consisting of three parts in percentage by weight, namely 85 to 92 percent of zinc barium titanite serving as a principal component, 3 to 8 percent of modified dopant and 3 to 10 percent of glass flux. The dielectric material adopts zinc-doped barium titanate generated through an oxalate method as a main material, is a ceramic dielectric material sintered at lower temperature and meeting EIA (electronic industries association) X7R temperature characteristic, matches a palladium/silver alloy inner electrode with 20/80 and even lower palladium content to prepare a multi-layer ceramic capacitor, and guarantees that a capacitor component has excellent electrical property and the material cost can be obviously reduced.
Description
Technical field
The present invention relates to a kind of ceramic capacitor dielectric material.
Background technology
Laminated ceramic capacitor (be called for short MLCC) is a kind of with the electrical condenser of pottery as medium, owing to MLCC has small volume, high reliability, is suitable for advantage such as surface mount and becomes the more passive electronic components of consumption in various electronic circuits.The ceramic medium material that MLCC uses comprises with the barium titanate being the class dielectric material with X7R temperature profile in the EIA standard of base, and electrode has good MLCC electrical property at 1100 ℃ of left and right sides sintering in the palladium/silver alloys of such match materials 30/70.Such as at MLCC products such as mesohigh, low ESR, radio frequency, microwaves, major part is as interior electrode with palladium/silver alloys.Because the price of precious metal palladium is higher, causes corresponding M LCC material cost higher, is unfavorable for the development of enterprise.
Summary of the invention
Purpose of the present invention, be that a kind of ceramic capacitor dielectric material will be provided, this dielectric material adopts the zinc doping barium titanate of oxalate method production as main material, agglomerating has the ceramic medium material that meets EIA standard x 7R temperature profile at a lower temperature, coupling 20/80 in addition more in the palladium/silver alloys of low palladium content electrode make laminated ceramic capacitor, when guaranteeing that capacity cell has excellent electrical properties, can significantly reduce material cost; And do not add harmful elements such as lead, cadmium, meet the requirement of present environmental protection aspect.
The present invention is achieved in that described a kind of ceramic capacitor dielectric material, it is characterized in that: described ceramic medium material is made up of principal constituent zinc titanate barium, modification hotchpotch and glass thing three parts of fluxing, and is specific as follows;
1) zinc titanate barium, molecular formula are Ba
1-xZn
xTiO
3, 0.01≤x≤0.06 wherein; Ba
1-xZn
xTiO
3In ceramic medium material, account for 85~92wt%;
2) the modification hotchpotch comprises SrO, Y
2O
3, Nb
2O
5, MnO
2, R
2O
3R is at least a among La, Ce, Nd, the Sm; Each oxide compound in the modification hotchpotch accounts for the SrO of 1~4wt%, the Y of 0.5~1.5 wt% in ceramic medium material
2O
3, 1~4 wt% Nb
2O
5, 0.1~0.4 wt% MnO
2, 0.3~1.5 wt% R
2O
3The modification hotchpotch accounts in ceramic medium material: 3~8wt%;
3) the glass thing of fluxing is a kind of Al of consisting of
2O
3-SiO
2-ZnO-CuO-V
2O
5Glass powder; It consists of: the Al of 5~10wt%
2O
3, the SiO of 10~20wt%
2, the ZnO of 15~25wt%, the CuO of 20~35wt%, the V of 30~45wt%
2O
5The glass thing of fluxing accounts for 3~10wt% in ceramic medium material.
Zinc titanate barium of the present invention is the zinc doping barium titanate of producing with oxalate method.
The invention has the beneficial effects as follows that this ceramic capacitor dielectric material has superior dielectric properties, sintering at a lower temperature, electrode preparation laminated ceramic capacitor in the palladium/silver alloys of coupling low palladium content obviously reduces its material cost.
Embodiment
The ceramic medium material preparation process that the present invention relates to is as follows:
1, the glass preparation of thing of fluxing: by the Al of 5~10wt%
2O
3, the SiO of 10~20 wt%
2, the ZnO of 15~25 wt%, the CuO of 20~35 wt%, the V of 30~45wt%
2O
5Each divided oxide another name is heavy, mix and place ball mill, in powder: water=1:(1~1.5) ratio add deionized water, the ball milling time is 15~25 hours, after ball milling mixes, carry out drying, pulverizing, 1150 ℃~1300 ℃ fusions 1~3 hour, pour quenching in the water then into, after superfine grinding, filtration, oven dry, obtain the glass of the present invention thing (glass powder) of fluxing.
2, according to the principal constituent zinc titanate barium that consists of 85~92wt%, the SrO of 1~4wt%, the Y of 0.5~1.5wt%
2O
3, 1~4 wt% Nb
2O
5, 0.1~0.4 wt% MnO
2, 0.3~1.5 wt% R
2O
3, R is at least a among La, Ce, Nd, the Sm, the glass of the 3~10wt% various materials of thing weighing of fluxing mix placing ultra-fine grinding mill to carry out superfine grinding, require the powder average particle size particle size less than 0.7 micron for well; Drying, pulverizing then obtains ceramic medium material powder of the present invention at last.
Embodiment
(1) with analytically pure Al
2O
3, SiO
2, ZnO, CuO, V
2O
5Be starting material, press the proportion of composing of table 1, after operations such as ball milling, drying, fusion, quenching, pulverizing, filtration, oven dry, make glass powder by 1 described glass powder preparation process in the summary of the invention.
(2) press the composition of table 2, main material is with oxalate method synthetic analytical pure Ba
1-xZn
xTiO
3(0.01≤x≤0.06) adds analytically pure SrO, Y
2O
3, Nb
2O
5, MnO
2, R
2O
3Glass powder described in (R be among La, Ce, Nd, the Sm at least a) and (1) adds deionized water and carry out superfine grinding in ball mill, makes ceramic medium material powder of the present invention after the oven dry.
(3) process of preparation electrical condenser sample: in the ceramic medium material described in (2), add the granulation of PVA based adhesive, the pressure that applies 10MPa is made the disk parison body of 10 millimeters of thick 1.5 millimeters, diameter, the design temperature curve is warming up to 900 ℃~1050 ℃ sintering in the air atmosphere stove then, ceramic plate coated on both sides silver slurry behind sintering, place electric furnace to be warming up to 750 ℃~820 ℃ burning infiltration silver electrodes, form the wafer capacitance device, every electrical property of test wafer capacitance device, test result is listed in the table 3.
The Example formulations of table 1 glass powder
Table 2 embodiments of the invention sample chemical constitution
The sintering condition of table 3 embodiments of the invention sample and electric performance test result
As can be seen from Table 3, the embodiments of the invention sample is sintering in 900 ℃~1050 ℃ temperature range, and room temperature dielectric constant is between 2000~3000, and electrical property satisfies the requirement of X7R temperature profile.This material is used for laminated ceramic capacitor, can with 20% in addition more palladium/the silver alloys of low palladium content reduce the material cost of capacitor fabrication as interior electrode.
Claims (2)
1. ceramic capacitor dielectric material is characterized in that: described ceramic medium material is made up of principal constituent zinc titanate barium, modification hotchpotch and glass thing three parts of fluxing, and is specific as follows;
1) zinc titanate barium, molecular formula are Ba
1-xZn
xTiO
3, 0.01≤x≤0.06 wherein; Ba
1-xZn
xTiO
3In ceramic medium material, account for 85~92wt%;
2) the modification hotchpotch comprises SrO, Y
2O
3, Nb
2O
5, MnO
2, R
2O
3R is at least a among La, Ce, Nd, the Sm; Each oxide compound in the modification hotchpotch accounts for the SrO of 1~4wt%, the Y of 0.5~1.5 wt% in ceramic medium material
2O
3, 1~4 wt% Nb
2O
5, 0.1~0.4 wt% MnO
2, 0.3~1.5 wt% R
2O
3The modification hotchpotch accounts for 3~8wt% in ceramic medium material;
3) the glass thing of fluxing is a kind of Al of consisting of
2O
3-SiO
2-ZnO-CuO-V
2O
5Glass powder; It consists of: the Al of 5~10wt%
2O
3, the SiO of 10~20wt%
2, the ZnO of 15~25wt%, the CuO of 20~35wt%, the V of 30~45wt%
2O
5The glass thing of fluxing accounts for 3~10wt% in ceramic medium material.
2. according to the described a kind of ceramic capacitor dielectric material of claim 1, it is characterized in that: described zinc titanate barium is the zinc doping barium titanate of producing with oxalate method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010538412 CN102010198A (en) | 2010-11-10 | 2010-11-10 | Ceramic capacitor dielectric material |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010538412 CN102010198A (en) | 2010-11-10 | 2010-11-10 | Ceramic capacitor dielectric material |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102010198A true CN102010198A (en) | 2011-04-13 |
Family
ID=43840555
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010538412 Pending CN102010198A (en) | 2010-11-10 | 2010-11-10 | Ceramic capacitor dielectric material |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102010198A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102617137A (en) * | 2012-03-28 | 2012-08-01 | 厦门松元电子有限公司 | BaO-TiO2 lead-free Y5P capacitor dielectric material and preparation method for same |
| CN102863222A (en) * | 2012-06-28 | 2013-01-09 | 深圳市固电电子有限公司 | Ceramic material and ceramic material and ferrite material low-temperature lamination cofiring method |
| CN103224393A (en) * | 2013-04-12 | 2013-07-31 | 深圳市大富科技股份有限公司 | Preparation method of microwave dielectric ceramic material |
| CN113314249A (en) * | 2021-05-26 | 2021-08-27 | 福建溥昱电子科技有限公司 | Silver paste for 5G ceramic dielectric filter and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067037A (en) * | 1992-05-11 | 1992-12-16 | 上海无线电六厂 | High-k, high stable, low-loss ceramic medium material and manufacture method |
| JP2002160967A (en) * | 2000-11-20 | 2002-06-04 | Matsushita Electric Ind Co Ltd | Piezo-electric porcelain composition |
| CN1841589A (en) * | 2005-04-01 | 2006-10-04 | 三星电机株式会社 | High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same |
| CN101348369A (en) * | 2008-09-06 | 2009-01-21 | 广东风华高新科技股份有限公司 | A kind of barium titanate ceramic dielectric material |
| EP2194766A1 (en) * | 2007-09-28 | 2010-06-09 | Soshin Electric Co. Ltd. | Ceramic multilayer substrate |
-
2010
- 2010-11-10 CN CN 201010538412 patent/CN102010198A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1067037A (en) * | 1992-05-11 | 1992-12-16 | 上海无线电六厂 | High-k, high stable, low-loss ceramic medium material and manufacture method |
| JP2002160967A (en) * | 2000-11-20 | 2002-06-04 | Matsushita Electric Ind Co Ltd | Piezo-electric porcelain composition |
| CN1841589A (en) * | 2005-04-01 | 2006-10-04 | 三星电机株式会社 | High-dielectric constant metal-ceramic-polymer composite material and method for producing embedded capacitor using the same |
| EP2194766A1 (en) * | 2007-09-28 | 2010-06-09 | Soshin Electric Co. Ltd. | Ceramic multilayer substrate |
| CN101348369A (en) * | 2008-09-06 | 2009-01-21 | 广东风华高新科技股份有限公司 | A kind of barium titanate ceramic dielectric material |
Non-Patent Citations (1)
| Title |
|---|
| 《化学学报》 20021231 丁士文等 微波反应合成纳米Ba1-xZnxTi1-ySnyO3介电材料及其结构、性能研究 第60卷, 第12期 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102617137A (en) * | 2012-03-28 | 2012-08-01 | 厦门松元电子有限公司 | BaO-TiO2 lead-free Y5P capacitor dielectric material and preparation method for same |
| CN102617137B (en) * | 2012-03-28 | 2013-06-12 | 厦门松元电子有限公司 | BaO-TiO2 lead-free Y5P capacitor dielectric material and preparation method for same |
| CN102863222A (en) * | 2012-06-28 | 2013-01-09 | 深圳市固电电子有限公司 | Ceramic material and ceramic material and ferrite material low-temperature lamination cofiring method |
| CN103224393A (en) * | 2013-04-12 | 2013-07-31 | 深圳市大富科技股份有限公司 | Preparation method of microwave dielectric ceramic material |
| CN103224393B (en) * | 2013-04-12 | 2018-06-05 | 深圳市大富科技股份有限公司 | A kind of preparation method of microwave dielectric ceramic materials |
| CN113314249A (en) * | 2021-05-26 | 2021-08-27 | 福建溥昱电子科技有限公司 | Silver paste for 5G ceramic dielectric filter and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109354492B (en) | Bismuth-based lead-free high energy storage density ceramic material and preparation method thereof | |
| JP5332807B2 (en) | Dielectric porcelain composition | |
| CN101848879B (en) | Lead-free, cadmium-free, low-temperature firing X7R dielectric ceramic composition and preparation method | |
| CN101880167B (en) | Base metal inner electrode multi-layer ceramic wafer type capacitor medium material prepared by chemical coating of water system | |
| CN101033132B (en) | Middle-temperature sintering high temperature stabilization type ceramic capacitor dielectric material | |
| CN101372419B (en) | Low temperature sintered high-frequency high dielectric ceramic dielectric material | |
| CN102795852A (en) | Novel LTCC low-frequency dielectric ceramic capacitor material | |
| CN104341144B (en) | Low-temperature sintering C0G characteristic microwave dielectric material and preparation method thereof | |
| CN113582683B (en) | BaTiO for X8R MLCC 3 Preparation method of base ceramic material | |
| CN101386534B (en) | High performance middle and low temperature sintered high-voltage ceramic capacitor medium | |
| JPH0920555A (en) | Ceramic of dielectric material, its production and electronic part using the same | |
| CN102030526B (en) | Anti-reduction ceramic dielectric material and preparation method thereof | |
| CN103408301A (en) | Ultrahigh voltage ceramic capacitor medium and preparation method thereof | |
| CN113307622B (en) | High-performance reduction-resistant barium titanate-based dielectric ceramic and preparation method thereof | |
| CN103408302B (en) | High permittivity and high temperature stability ceramic capacitor medium and its preparation method | |
| CN102992756A (en) | X8R-type capacitor ceramic material with high dielectric constant and preparation method thereof | |
| CN102010198A (en) | Ceramic capacitor dielectric material | |
| CN103011805A (en) | A kind of BaTiO3-based lead-free X8R type ceramic capacitor dielectric material and preparation method thereof | |
| CN102690118B (en) | NP0 type ceramic capacitor dielectric material and its preparation method | |
| CN106631002A (en) | Dielectric material for Mg-Zn-Ti-based radio-frequency MLCC (multi-layer ceramic capacitor) and preparation method of dielectric material | |
| CN106747417A (en) | A kind of LTCC low-frequency dielectric ceramic capacitor material and preparation method thereof | |
| CN103113100A (en) | High-temperature stabilization ceramic capacitor dielectric | |
| CN104609852A (en) | Linear capacitor ceramic material with high pressure and low loss and preparation method of linear capacitor ceramic material | |
| CN106747416B (en) | Medium and low temperature sintering temperature stable ceramic capacitor material and preparation method thereof | |
| CN102627456A (en) | Low-loss high-voltage ceramic capacitor dielectric |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20110413 |