CN102064253A - Light-emitting diode and manufacture method thereof - Google Patents
Light-emitting diode and manufacture method thereof Download PDFInfo
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- CN102064253A CN102064253A CN 201010559682 CN201010559682A CN102064253A CN 102064253 A CN102064253 A CN 102064253A CN 201010559682 CN201010559682 CN 201010559682 CN 201010559682 A CN201010559682 A CN 201010559682A CN 102064253 A CN102064253 A CN 102064253A
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Abstract
The invention discloses a light-emitting diode and a manufacture method thereof. The light-emitting diode comprises a buffer layer, an epitaxial layer, an active layer and a cap layer, wherein the epitaxial layer, the active layer and the cap layer are sequentially positioned on the buffer layer, the buffer layer is provided with a plurality of sinks on the surface far away from the epitaxial layer, when light emitted from the active layer exits through the sinks, the incident angle of the light is always less than the critical angle of total reflection, thus total reflection cannot happen, most of light can be ensured to be transmitted from the surface of the buffer layer, the external quantum efficiency of the light-emitting diode is improved, and the light-exiting efficiency of the light-emitting diode is increased; meanwhile, the rise of the temperature inside the light-emitting diode can be avoided, and the performance of the light-emitting diode is improved.
Description
Technical field
The present invention relates to the semiconductor light emitting field, particularly relate to a kind of light-emitting diode and manufacture method thereof.
Background technology
Light-emitting diode (LED, Light Emitting Diode) is applied to various fields owing to have long, advantage such as power consumption is low of life-span, especially day by day significantly improves along with its illumination performance index, and LED is commonly used for light-emitting device at lighting field.Wherein, be the III-V compound semiconductor of representative with gallium nitride (GaN) because have that band gap is wide, luminous efficiency is high, characteristics such as electronics saturation drift velocity height, chemical property are stable, in field of optoelectronic devices such as high brightness blue light-emitting diode, blue lasers huge application potential is arranged, caused people's extensive concern.
Yet semiconductor light-emitting-diode exists the low problem of luminous efficiency at present.For the light-emitting diode of common un-encapsulated, its light extraction efficiency generally has only a few percent, and lot of energy accumulates in device inside can not outgoing, has both caused energy dissipation, influences the useful life of device again.Therefore, the light extraction efficiency of raising semiconductor light-emitting-diode is most important.
Based on above-mentioned application demand, the method that many kinds improve the light-emitting diode light extraction efficiencies is applied in the device architecture, surface roughening method for example, metallic mirror structure etc.
A kind of full angle reflector structure GaN base light emitting diode and preparation method thereof is disclosed in application number is 200510066898.3 Chinese patent.With reference to figure 1, described light-emitting diode comprises: substrate 1, be grown in the all-angle reflector 4 on the substrate 1 and be produced on GaN led chip 13 on the all-angle reflector 4.Described GaN led chip 13 comprises: Sapphire Substrate 5, N type GaN layer 6, active area quantum well layer 7, P type GaN layer 8, P type electrode 9, P type pad 10, N type electrode 11, N type pad 12; Wherein, described all-angle reflector 4 is grown on the substrate 1, and it is become with low-index layer 2 stacked arrangement by high refractive index layer 3, and high refractive index layer 3 contacts with Sapphire Substrate 5, and low-index layer 2 contacts with substrate 1, the refractive index n of high refractive index layer
HThe refractive index n of＞low-index layer
LThe refractive index n of＞sapphire material, and satisfy θ
1 Max＜θ
B, wherein, n, n
H, n
LBe refractive index.This patent is by forming full angle reflector structure at the light-emitting diode lower surface, can with GaN material institute luminous in the full angle scope with upwards reflection of high reflectance, improve the light extraction efficiency of light-emitting diode.Yet this method for manufacturing light-emitting need form multilayer and pile up the membrane structure that forms by high refractive index layer and low-index layer on substrate, and manufacture craft is very complicated, is unfavorable for applying.
Summary of the invention
The object of the present invention is to provide a kind of light-emitting diode and manufacture method thereof, to solve the low problem of existing light-emitting diode light extraction efficiency.
For solving the problems of the technologies described above, the invention provides a kind of light-emitting diode, comprising: a kind of light-emitting diode comprises: resilient coating; Be positioned at epitaxial loayer, active layer and cap layer on the described resilient coating successively; Wherein, described resilient coating has a plurality of depressions on the surface away from described epitaxial loayer.
In described light-emitting diode, described depression is the dome-type depression.
In described light-emitting diode, the material of described resilient coating is a gallium nitride.
In described light-emitting diode, described light-emitting diode also comprises the transparency conducting layer that is positioned on the described cap layer.Described light-emitting diode comprises that also first electrode, second electrode and the degree of depth extend to the opening of described epitaxial loayer, and wherein, described first electrode is positioned on the described transparency conducting layer, is used to connect transparency conducting layer and positive source; Described second electrode is positioned at described opening, is used to connect epitaxial loayer and power cathode.
In described light-emitting diode, the gallium nitride that the material of described epitaxial loayer mixes for the N type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described cap layer mixes for the P type.
Accordingly, the present invention also provides a kind of manufacturing method for LED, comprising: substrate is provided; On described substrate, form a plurality of microlens structures; On described substrate, form resilient coating, epitaxial loayer, active layer and cap layer successively, to form the depression that a plurality of and described microlens structure is complementary on away from the surface of described epitaxial loayer at described resilient coating; Remove described substrate.
In described manufacturing method for LED, described depression is the dome-type depression.
In described manufacturing method for LED, the material of described resilient coating is a gallium nitride, and the material of described substrate is sapphire or carborundum.
In described manufacturing method for LED, utilize the mixed solution of sulfuric acid and phosphoric acid to remove substrate.
In described manufacturing method for LED, comprise: on described substrate, form a plurality of cylindrical photoresist platforms in the step that forms a plurality of microlens structures on the described substrate; Cylindrical photoresist platform is toasted, make described cylindrical photoresist platform become spherical crown shape photoresist; With described spherical crown shape photoresist is mask, carries out the inductively coupled plasma etching technics, to form a plurality of microlens structures on described substrate.
In described manufacturing method for LED, the gallium nitride that the material of described epitaxial loayer mixes for the N type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described cap layer mixes for the P type.
In described manufacturing method for LED, remove before the described substrate, also comprise: on described cap layer, form transparency conducting layer; On described transparency conducting layer, form first electrode; Form the opening that the degree of depth extends to described epitaxial loayer; In described opening, form second electrode.
In described manufacturing method for LED, remove before the described substrate, also comprise: on described transparency conducting layer, form passivation layer; The described substrate of attenuate.
Compared with prior art, the present invention has the following advantages: the resilient coating of this light-emitting diode has a plurality of depressions on the surface away from epitaxial loayer, the light that sends from active layer is when described depression outgoing, its incidence angle is always less than the cirtical angle of total reflection, thereby total reflection can not take place, guarantee that most light can go out from this buffer-layer surface transmission, thereby improved the external quantum efficiency of light-emitting diode, improved the light extraction efficiency of light-emitting diode; And, can avoid the rising of light-emitting diode internal temperature, improved the performance of light-emitting diode.
Description of drawings
Fig. 1 is the schematic diagram of existing light-emitting diode;
Fig. 2 is the schematic diagram of the light-emitting diode of one embodiment of the invention;
Fig. 3 is the schematic flow sheet of the method for manufacturing light-emitting of one embodiment of the invention;
Fig. 4 A～4J is the generalized section of the method for manufacturing light-emitting of one embodiment of the invention.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.
Core concept of the present invention is, a kind of light-emitting diode and manufacture method thereof are provided, the resilient coating of described light-emitting diode has a plurality of depressions on the surface away from epitaxial loayer, the light that sends from active layer is when described depression outgoing, its incidence angle is always less than the cirtical angle of total reflection, thereby total reflection can not take place, and guarantees that most light can go out from this buffer-layer surface transmission, thereby improved the external quantum efficiency of light-emitting diode, and then improved the light extraction efficiency of light-emitting diode; And, can avoid the rising of light-emitting diode internal temperature, improved the performance of light-emitting diode.
Please refer to Fig. 2, it is the schematic diagram of the light-emitting diode of one embodiment of the invention.As shown in Figure 2, described light-emitting diode comprises: resilient coating 210; Be positioned at epitaxial loayer 220, active layer 230, cap layer 240 on the described resilient coating 210 successively; Wherein, resilient coating 210 has a plurality of depressions 211 on the surface away from epitaxial loayer 220, the light that sends from active layer 230 is when described depression 211 outgoing, its incidence angle is always less than the cirtical angle of total reflection, thereby total reflection can not take place, guarantee that most light can go out from these resilient coating 210 surperficial transmissions, thereby improved the external quantum efficiency of light-emitting diode, and then improved the light extraction efficiency of light-emitting diode, and can avoid the rising of light-emitting diode internal temperature, improved the performance of light-emitting diode.
Wherein, described depression 211 is preferably dome-type depression, and this dome-type depression can guarantee that the light of the overwhelming majority goes out from these resilient coating 210 surperficial transmissions, and the degree of depth of this depression 211 for example is 2 μ m～50 μ m.Be understandable that in other embodiment of the present invention, described depression also can be other shape, semielliptical shape for example, the degree of depth of described depression can be done corresponding adjustment according to the requirement of device.
Further, the material of described resilient coating 210 is a gallium nitride; Preferably, described resilient coating 210 adopts the cryogenic conditions gallium nitride film of growth down.Described epitaxial loayer 220, active layer 230 and cap layer 240 are positioned on the resilient coating 210 successively, and described epitaxial loayer 220 covers described resilient coating 210, the tube core of described epitaxial loayer 220, active layer 230 and cap layer 240 formation light-emitting diode; Wherein, the material of epitaxial loayer 220 is the gallium nitride (n-GaN) of N type doping; Described active layer 230 comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is indium gallium nitride (InGaN), is used to send the blue light that wavelength is 470nm; The gallium nitride (p-GaN) that the material of described cap layer 240 mixes for the P type.Because epitaxial loayer 220 is opposite with the doping type of cap layer 240, the gallium nitride that the N type mixes drives by external voltage and makes electron drift, the gallium nitride that the P type mixes drives by external voltage and makes hole drift, described hole and electronics be combination again mutually in multiple quantum well active layer (being also referred to as active layer), thus reverberation.
Further, described light-emitting diode also comprises transparency conducting layer (TCL) 250, and described transparency conducting layer 250 is positioned on the cap layer 240.Because the conductivity of the gallium nitride that the P type mixes is smaller, therefore, help to improve conductivity at the current-diffusion layer of cap layer 240 surface deposition layer of metal, the material of described transparency conducting layer 250 for example is the Ni/Au material.
In addition, for the tube core with light-emitting diode is connected to power positive cathode, described light-emitting diode also comprises first electrode 260, second electrode 270 and the opening, wherein, the degree of depth of described opening extends to epitaxial loayer 220 (being the epitaxial loayer 220 that described opening runs through transparency conducting layer 250, cap layer 240, active layer 230 and segment thickness), described first electrode 260 is positioned on the transparency conducting layer 250, is used to connect transparency conducting layer 250 and positive source; Second electrode 270 is positioned at described opening, is used to connect epitaxial loayer 220 and power cathode.Be understandable that described opening also can only run through transparency conducting layer 250, cap layer 240 and active layer 230, second electrode 270 is connected with epitaxial loayer 220.
Described light-emitting diode is used for when luminous, with first electrode 260 be connected to positive source, second electrode 270 is connected to power cathode, LED core links to each other with positive source by first electrode 260, link to each other with power cathode by second electrode 270, active layer 230 in the LED core is luminous under the function of current, described depression 211 can guarantee that most light goes out from buffering laminar surface transmission, thereby improved the external quantum efficiency of light-emitting diode, and avoid the rising of light-emitting diode internal temperature, and then improved the performance of light-emitting diode.
Further; described light-emitting diode also comprises the passivation layer 280 that is positioned on the described transparency conducting layer 250; described passivation layer 280 covers described first electrode 260, second electrode 270, transparency conducting layer 250; and be filled in the described opening, described passivation layer 280 is used to protect the tube core of light-emitting diode injury-free.
Accordingly, the present invention also provides a kind of manufacturing method for LED, specifically please refer to Fig. 3, and it is the schematic flow sheet of the method for manufacturing light-emitting of one embodiment of the invention, and described manufacturing method for LED may further comprise the steps:
S300 provides substrate;
S310 forms a plurality of microlens structures on described substrate;
S320 forms resilient coating, epitaxial loayer, active layer and cap layer successively on described substrate, to form the depression that a plurality of and described microlens structure is complementary at described resilient coating on away from the surface of described epitaxial loayer;
S330 removes described substrate.
Below in conjunction with generalized section manufacturing method for LED of the present invention is described in more detail, the preferred embodiments of the present invention have wherein been represented, should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing for those skilled in the art, and not as limitation of the present invention.
With reference to figure 4A, and integrating step S300, at first, provide substrate 400, in the present embodiment, the material of described substrate 400 is a sapphire, described substrate 400 is in order to form gallium nitrate based blue light diode.Certainly, described substrate 400 can also be other substrate, for example silicon carbide substrates.
With reference to figure 4B, next,, on substrate 400, form a plurality of cylindrical photoresist platforms 490 by gluing, exposure and developing process.Described cylindrical photoresist platform 490 is meant that it is circular that the photoresist platform is overlooked (being parallel to substrate 400 surface direction).The thickness of described cylindrical photoresist platform 490 for example is 0.1 μ m～5 μ m, and diameter for example is 1 μ m～10 μ m, spacing 0.1 μ m～1 μ m.Certainly, those skilled in the art can be according to the corresponding shape and size of adjusting cylindrical photoresist platform of the size of the actual depression that will obtain.
With reference to figure 4C, subsequently, described cylindrical photoresist platform 490 is toasted, make described cylindrical photoresist platform 490 become spherical crown shape photoresist 491.In the present embodiment, in temperature is 120 ℃～250 ℃ scope, cylindrical photoresist platform 490 is toasted, described cylindrical photoresist platform 490 is being higher than under the glass transition temperature of photoresist, because capillary effect becomes spherical crown shape photoresist 491.Certainly, in other embodiment of the present invention, also can under other temperature, toast cylindrical photoresist platform 490.
With reference to figure 4D, thereafter, with described spherical crown shape photoresist 491 is mask, carry out inductively coupled plasma (Inductive Coupled Plasma, ICP) etching technics, etched away fully until spherical crown shape photoresist 491, can be at substrate 400 near forming a plurality of microlens structures 401 on the surface of resilient coating.The shape of described microlens structure 401 is preferably dome-type, and certainly, the shape of described microlens structure 401 also can adjust according to the shape of the depression that will form, and for example, also can be semielliptical shape.
Optionally, described inductively coupled plasma etch step is controlled at the ratio of the etch rate of substrate 400 and the etch rate of spherical crown shape photoresist 491 in 0.8～1.2 the scope, to form a plurality of microlens structures 401 on substrate 400.In the present embodiment, can the etching selection ratio of inductively coupled plasma etching technics be controlled in the above-mentioned scope by the numerical value of control base plate radio-frequency power and coil radio-frequency power.Certainly, in other embodiments of the invention, also can be by controlling the purpose that other etching technics parameter reaches the etching selection ratio of control inductively coupled plasma etching technics.
In described inductively coupled plasma etching technics, the etching gas that is adopted can be boron chloride (BCl
3), the mist of helium (He) and argon gas (Ar), wherein, the flow of boron chloride for example is 20～1000sccm, the flow of helium for example is 20～500sccm, the flow of argon gas for example is 20～500sccm; Chamber pressure is 50mTorr～2Torr, and backplane power (plate power) is 200W～300W, and coil power is 300W～500W.Certainly, foregoing description also is not used in qualification the present invention, and those skilled in the art can adjust etching gas and every technological parameter accordingly according to the actual conditions of etching machine bench, and adjust etching selection ratio accordingly, to reach the purpose that on substrate, forms microlens structure.
With reference to figure 4E, next, form resilient coating 410 on the substrate 400 with a plurality of microlens structures 401, described resilient coating 410 covers a plurality of microlens structures 401 fully, to form a plurality of depressions that are complementary with microlens structure 401 at resilient coating 410 on away from the surface of epitaxial loayer 420.Be understandable that, owing to formed a plurality of microlens structures 401 on the substrate 400, therefore, the resilient coating 410 and the substrate 400 contacted surfaces of follow-up formation are not to be smooth, and promptly this resilient coating 410 has had a plurality of depressions that are complementary with microlens structure 401 accordingly with substrate 400 contacted surfaces.
After forming resilient coating 410, on described resilient coating 410, form epitaxial loayer 420, active layer 430, cap layer 440 successively, described epitaxial loayer 420, active layer 430 and cap layer 440 constitute the tube core of light-emitting diode.The gallium nitride that the material of described epitaxial loayer 420 mixes for the N type; Active layer 430 comprises multiple quantum well active layer, and the material of multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of cap layer 440 mixes for the P type.Afterwards, form transparency conducting layer 450 on cap layer 440, described transparency conducting layer 450 helps to improve conductivity, and the material of described transparency conducting layer 450 can adopt the Ni/Au material.Can utilize conventional metal organic chemical vapor deposition (MOCVD) technology to form resilient coating 410, epitaxial loayer 420, active layer 430, cap layer 440, and can utilize mode such as sputter to form transparency conducting layer 450.
With reference to figure 4F, subsequently, on transparency conducting layer 450, form first electrode 460, be used to connect transparency conducting layer 450 and positive source; And utilize the method for photoetching and etching, and form the opening that the degree of depth extends to epitaxial loayer 420, in described opening, form second electrode 470 again, be used to connect epitaxial loayer 420 and power cathode.
With reference to figure 4G; then; form passivation layer 480 on transparency conducting layer 450, described passivation layer 480 covers first electrode 460, second electrode 470, and described passivation layer 480 is used to protect the tube core of first electrode 460, second electrode 470 and described light-emitting diode to be without prejudice.
With reference to figure 4H, then, the described substrate 400 of attenuate helps substrate 400 attenuates to be etched away fast in follow-up step.Can utilize thinning back side (backside grinding) or laser lift-off (laserliftoffprocessing, mode attenuate substrate 400 LTO).Preferably, with reduced thickness to the 30～50 μ m of substrate 400, certainly, the thickness of attenuate is not limited to foregoing description.
With reference to figure 4I, then, can utilize the mode of wet etching to remove substrate 400, can form a plurality of depressions 411 on away from the surface of epitaxial loayer at resilient coating 410.The employed etching liquid of described wet etching step is preferably the mixed solution of sulfuric acid and phosphoric acid, and the mixed solution of this sulfuric acid and phosphoric acid is comparatively desirable to the etching selection ratio of sapphire and gallium nitride.Certainly, also can select other that etching liquid that substrate and resilient coating have preferable etching selection ratio is removed substrate 400; Perhaps, also can adopt the mode of dry etching to remove substrate 400.
With reference to figure 4J, remove after the substrate 400, also can utilize traditional etching technics etching (etchback) passivation layer 480 back and forth, to remove the passivation layer of segment thickness, and utilize traditional cutting (dicing) and encapsulation (bumping packaging) technology that described light-emitting diode is encapsulated, can form the LED packaging part.The present invention does not relate to the improvement of packaging technology, will not describe in detail at this.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (14)
1. light-emitting diode comprises:
Resilient coating;
Be positioned at epitaxial loayer, active layer and cap layer on the described resilient coating successively;
Wherein, described resilient coating has a plurality of depressions on the surface away from described epitaxial loayer.
2. light-emitting diode as claimed in claim 1 is characterized in that, described depression is the dome-type depression.
3. light-emitting diode as claimed in claim 1 is characterized in that, the material of described resilient coating is a gallium nitride.
4. light-emitting diode as claimed in claim 1 is characterized in that, described light-emitting diode also comprises the transparency conducting layer that is positioned on the described cap layer.
5. light-emitting diode as claimed in claim 4 is characterized in that, described light-emitting diode comprises that also first electrode, second electrode and the degree of depth extend to the opening of described epitaxial loayer, wherein,
Described first electrode is positioned on the described transparency conducting layer, is used to connect transparency conducting layer and positive source;
Described second electrode is positioned at described opening, is used to connect epitaxial loayer and power cathode.
6. light-emitting diode as claimed in claim 1 is characterized in that, the gallium nitride that the material of described epitaxial loayer mixes for the N type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described cap layer mixes for the P type.
7. manufacturing method for LED comprises:
Substrate is provided;
On described substrate, form a plurality of microlens structures;
On described substrate, form resilient coating, epitaxial loayer, active layer and cap layer successively, with at described resilient coating
Away from forming the depression that a plurality of and described microlens structure is complementary on the surface of described epitaxial loayer;
Remove described substrate.
8. manufacture method as claimed in claim 7 is characterized in that, described depression is the dome-type depression.
9. manufacture method as claimed in claim 7 is characterized in that, the material of described resilient coating is a gallium nitride,
The material of described substrate is sapphire or carborundum.
10. manufacture method as claimed in claim 9 is characterized in that, utilizes the mixed solution of sulfuric acid and phosphoric acid to remove described substrate.
11. manufacture method as claimed in claim 7 is characterized in that, the step that forms a plurality of microlens structures on described substrate comprises:
On described substrate, form a plurality of cylindrical photoresist platforms;
Cylindrical photoresist platform is toasted, make described cylindrical photoresist platform become spherical crown shape photoresist;
With described spherical crown shape photoresist is mask, carries out the inductively coupled plasma etching technics, to form a plurality of microlens structures on described substrate.
12. manufacture method as claimed in claim 7 is characterized in that, the gallium nitride that the material of described epitaxial loayer mixes for the N type; Described active layer comprises multiple quantum well active layer, and the material of described multiple quantum well active layer is the indium gallium nitride; The gallium nitride that the material of described cap layer mixes for the P type.
13. manufacture method as claimed in claim 7 is characterized in that, removes before the described substrate, also comprises:
On described cap layer, form transparency conducting layer;
On described transparency conducting layer, form first electrode;
Form the opening that the degree of depth extends to described epitaxial loayer;
In described opening, form second electrode.
14. manufacture method as claimed in claim 13 is characterized in that, removes before the described substrate, also comprises:
On described transparency conducting layer, form passivation layer;
The described substrate of attenuate.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105449056A (en) * | 2015-12-30 | 2016-03-30 | 山东浪潮华光光电子股份有限公司 | High-light-efficiency spot-evening LED chip with sapphire substrate and preparation method of LED chip |
| CN111029449A (en) * | 2019-11-08 | 2020-04-17 | 厦门大学 | A kind of deep ultraviolet thin film semiconductor device structure and fabrication method thereof |
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| CN111029449A (en) * | 2019-11-08 | 2020-04-17 | 厦门大学 | A kind of deep ultraviolet thin film semiconductor device structure and fabrication method thereof |
| CN111885364A (en) * | 2020-06-24 | 2020-11-03 | 歌尔微电子有限公司 | Micro-projection equipment and electronic equipment |
| CN113054064A (en) * | 2021-03-22 | 2021-06-29 | 华南师范大学 | Deep ultraviolet LED with high external quantum efficiency and preparation method thereof |
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