CN102094239A - Ingot polycrystalline furnace bottom crucible protective plate - Google Patents
Ingot polycrystalline furnace bottom crucible protective plate Download PDFInfo
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- CN102094239A CN102094239A CN 201010294201 CN201010294201A CN102094239A CN 102094239 A CN102094239 A CN 102094239A CN 201010294201 CN201010294201 CN 201010294201 CN 201010294201 A CN201010294201 A CN 201010294201A CN 102094239 A CN102094239 A CN 102094239A
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- ingot
- crucible
- quartz crucible
- polycrystalline
- crystallization
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- 230000001681 protective effect Effects 0.000 title description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 7
- 239000010439 graphite Substances 0.000 claims abstract description 7
- 238000005266 casting Methods 0.000 claims abstract 4
- 239000011159 matrix material Substances 0.000 claims 4
- 239000003870 refractory metal Substances 0.000 claims 1
- 239000010453 quartz Substances 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 14
- 239000013078 crystal Substances 0.000 abstract description 12
- 238000002425 crystallisation Methods 0.000 abstract description 7
- 230000008025 crystallization Effects 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 7
- 229920005591 polysilicon Polymers 0.000 abstract description 6
- 230000006911 nucleation Effects 0.000 abstract description 5
- 238000010899 nucleation Methods 0.000 abstract description 5
- 230000007547 defect Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000009826 distribution Methods 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005094 computer simulation Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明涉及一种铸锭多晶炉底坩埚护板，一块带有圆形或多边形凸起的是石墨板。在多晶铸锭过程中，石英坩埚放置在本发明涉的具有凸起的石墨板上，使得石英坩埚底部与石墨板的接触区域由平面变为分散的“点域”接触。从而使石英坩埚与底护板之间的传热由平面变为点点加强的区域接触。在石英坩埚底部形成一个个与凸起中心相对应的冷点，为多晶铸锭结晶初始阶段提供结晶点。从而减少铸锭多晶硅结晶初期的形核数量，并且在形核后沿石英坩埚横向长大，铺满坩埚底部后再竖直生长，在多晶铸锭中形成比较大的柱状晶。减少铸锭多晶硅中的晶界含量，从而降低铸锭多晶体内缺陷，提高晶体质量，从而提高光伏电池的转换效率。
The invention relates to an ingot polycrystalline furnace bottom crucible guard plate, one of which is a graphite plate with circular or polygonal protrusions. During the polycrystalline ingot casting process, the quartz crucible is placed on the graphite plate with protrusions of the present invention, so that the contact area between the bottom of the quartz crucible and the graphite plate changes from a flat surface to a scattered "point domain" contact. Thereby, the heat transfer between the quartz crucible and the bottom guard plate changes from a flat surface to an enhanced area contact. Cold spots corresponding to the raised centers are formed on the bottom of the quartz crucible to provide crystallization points for the initial stage of polycrystalline ingot crystallization. Thereby reducing the number of nucleation in the initial stage of ingot polysilicon crystallization, and after nucleation grows laterally along the quartz crucible, and then grows vertically after covering the bottom of the crucible, forming relatively large columnar crystals in the polycrystalline ingot. Reduce the grain boundary content in the ingot polysilicon, thereby reducing the defects in the ingot polycrystal, improving the crystal quality, and thus improving the conversion efficiency of photovoltaic cells.
Description
技术领域technical field
本发明涉及半导体硅多晶铸锭生产设备，尤其是一种铸锭多晶炉底坩埚护板。The invention relates to semiconductor silicon polycrystalline ingot production equipment, in particular to an ingot polycrystalline furnace bottom crucible guard plate.
背景技术Background technique
在太阳能光伏领域，利用定向凝固的方法生产多晶硅锭是普遍采用的方法。其基本原理是，将多晶硅原料放置在石英陶瓷坩埚中，石英陶瓷坩埚放置在由石墨底护板及侧护板构成的“石墨坩埚”中，放置在热场系统中，加热使得硅料完全融化。然后，热场底部开启，热量从坩埚底部释放，温度降低，坩埚的底部将逐渐冷却到硅材料的结晶点温度。然后硅溶液在坩埚底部开始结晶，逐渐向上生长(凝固)，形状自下而上的柱状晶体结构。由于传统的坩埚底护板为平板结构，其弊端是，石英陶瓷坩埚的底面与底护板完全接触，因而对于坩埚底部来说，散热强度基本一致。从而在长晶初期，整个石英坩埚底面上温度分布基本一致，成核机会也一致，从而形成大量的晶核。使得晶体中的晶粒较小，在多晶体内的晶界密度及晶体缺陷密度较高，影响铸锭多晶晶体的质量，利用其制作的太阳能电池转换效率也会受到影响。In the field of solar photovoltaics, the production of polysilicon ingots by directional solidification is a commonly used method. The basic principle is that polysilicon raw materials are placed in a quartz ceramic crucible, and the quartz ceramic crucible is placed in a "graphite crucible" composed of a graphite bottom guard plate and side guard plates, placed in a thermal field system, and heated to completely melt the silicon material . Then, the bottom of the thermal field is turned on, the heat is released from the bottom of the crucible, the temperature drops, and the bottom of the crucible will gradually cool down to the crystallization point temperature of the silicon material. Then the silicon solution begins to crystallize at the bottom of the crucible, and gradually grows (solidifies) upwards, forming a bottom-up columnar crystal structure. Because the traditional crucible bottom guard plate is a flat plate structure, its disadvantage is that the bottom surface of the quartz ceramic crucible is in full contact with the bottom guard plate, so the heat dissipation intensity is basically the same for the bottom of the crucible. Therefore, in the early stage of crystal growth, the temperature distribution on the bottom surface of the entire quartz crucible is basically the same, and the nucleation opportunities are also consistent, thus forming a large number of crystal nuclei. The crystal grains in the crystal are smaller, and the grain boundary density and crystal defect density in the polycrystal are higher, which affects the quality of the cast polycrystalline crystal, and the conversion efficiency of the solar cell made by using it will also be affected.
发明内容Contents of the invention
本发明要解决的技术问题是：提供一种使得石英坩埚底部与坩埚护板的接触区域由平面变为分散的“点域”接触的铸锭多晶炉底坩埚护板。The technical problem to be solved by the present invention is to provide an ingot polycrystalline furnace bottom crucible guard plate that makes the contact area between the bottom of the quartz crucible and the crucible guard plate change from a plane to a scattered “point domain”.
本发明解决其技术问题所采用的技术方案是：一种铸锭多晶炉底坩埚护板，包括护板基体，所述的护板基体表面具有凸起。The technical solution adopted by the present invention to solve the technical problem is: an ingot-cast polycrystalline furnace bottom crucible guard plate, including a guard plate base body, and the surface of the guard plate base body has protrusions.
进一步具体的说，本发明所述的凸起为圆形或多边形，凸起的高度为2mm～6mm，凸起的个数为25～576个，凸起的直径为39mm～156mm。而所述的护板基体为石墨板或耐高温金属板，护板基体的厚度为20mm～30mm。More specifically, the protrusions described in the present invention are circular or polygonal, the height of the protrusions is 2 mm to 6 mm, the number of protrusions is 25 to 576, and the diameter of the protrusions is 39 mm to 156 mm. The base of the protective plate is a graphite plate or a high-temperature-resistant metal plate, and the thickness of the base of the protective plate is 20 mm to 30 mm.
本发明的有益效果是，解决了背景技术中存在的缺陷，减少在铸锭多晶结晶初期的成核数量，并且在结晶初期控制晶粒横向长大后再向上生长，从而获得具有较大横截面积的柱状多晶硅晶锭。降低铸锭多晶硅体内晶界及缺陷密度，提高晶体质量，从而提高光伏电池的转换效率。The beneficial effect of the present invention is that it solves the defects in the background technology, reduces the number of nucleation in the initial stage of ingot polycrystalline crystallization, and controls the lateral growth of crystal grains in the early stage of crystallization and then upward growth, thereby obtaining a larger lateral Columnar polysilicon ingot with a cross-sectional area. Reduce the grain boundary and defect density in the ingot polycrystalline silicon, improve the crystal quality, and thus improve the conversion efficiency of photovoltaic cells.
附图说明Description of drawings
下面结合附图和实施例对本发明进一步说明。The present invention will be further described below in conjunction with the accompanying drawings and embodiments.
图1是本发明凸起为多边形的结构示意图；Fig. 1 is the structure schematic diagram that protrusion of the present invention is a polygon;
图2是本发明凸起为圆形的结构示意图；Fig. 2 is a structural schematic diagram in which the protrusions of the present invention are circular;
图3是本发明应用时石英坩埚底部的温度分布曲线；Fig. 3 is the temperature distribution curve at the bottom of the quartz crucible when the present invention is applied;
图中：1、护板基体；2、凸起。In the figure: 1, the guard plate base; 2, the protrusion.
具体实施方式Detailed ways
现在结合附图和优选实施例对本发明作进一步详细的说明。这些附图均为简化的示意图，仅以示意方式说明本发明的基本结构，因此其仅显示与本发明有关的构成。The present invention will now be described in further detail in conjunction with the accompanying drawings and preferred embodiments. These drawings are all simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, so they only show the configurations related to the present invention.
如图1所示的一种铸锭多晶炉底坩埚护板，包括护板基体1，所述的护板基体1表面具有凸起2。As shown in FIG. 1 , an ingot polycrystalline furnace bottom crucible guard plate includes a
本发明的应用比较方便，对现有铸锭多晶硅设备没有特殊要求。应用时，只需要将本发明带有凸起2的一面向上放置，然后将石英陶瓷坩埚放置在其上即可。The application of the invention is relatively convenient, and there is no special requirement for the existing ingot polysilicon equipment. During application, it is only necessary to place the side of the present invention with the
利用计算机仿真技术，对应用本发明的石英坩埚底部的温度分布进行的模拟分析，结果如图3所示。实验样板的凸起个数为25个，直径为52mm，凸起的分布形式为5行5列，凸起中心间距为156mm。谷底对应的是本发明凸起的中心。从温度分布的结果上看，本发明能够对石英坩埚底部的温度分布产生显著影响，在坩埚底部对应底护板凸起中心处的温度最低，在结晶初期，将首先在该处成核。从温度的分布同样可以看出，温度自凸起中心将附近平缓上升，形成一定大小的横向温度梯度，这样促使该处的晶核首先横向生长，有利于获得较大的晶粒结构。Using computer simulation technology, the simulation analysis of the temperature distribution at the bottom of the quartz crucible of the present invention is carried out, and the results are shown in Figure 3. The number of protrusions of the experimental model is 25, the diameter is 52mm, the distribution of the protrusions is 5 rows and 5 columns, and the distance between the centers of the protrusions is 156 mm. The bottom of the valley corresponds to the center of the protrusion of the present invention. From the results of temperature distribution, the present invention can have a significant impact on the temperature distribution at the bottom of the quartz crucible. The temperature at the bottom of the crucible corresponding to the raised center of the bottom guard plate is the lowest. In the initial stage of crystallization, nucleation will first occur there. It can also be seen from the temperature distribution that the temperature rises gradually from the center of the bulge to form a certain lateral temperature gradient, which promotes the lateral growth of crystal nuclei there first, which is conducive to obtaining a larger grain structure.
以上说明书中描述的只是本发明的具体实施方式，各种举例说明不对本发明的实质内容构成限制，所属技术领域的普通技术人员在阅读了说明书后可以对以前所述的具体实施方式做修改或变形，而不背离发明的实质和范围。What is described in the above description is only the specific implementation of the present invention, and various illustrations do not limit the essence of the present invention. Those of ordinary skill in the art can modify or modify the previous specific implementation after reading the description. variations without departing from the spirit and scope of the invention.
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| CN 201010294201 CN102094239A (en) | 2010-09-28 | 2010-09-28 | Ingot polycrystalline furnace bottom crucible protective plate |
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| CN 201010294201 CN102094239A (en) | 2010-09-28 | 2010-09-28 | Ingot polycrystalline furnace bottom crucible protective plate |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102787348A (en) * | 2012-08-29 | 2012-11-21 | 天威新能源控股有限公司 | Combined guard board for preparing pseudo-single crystal with high utilization rate and method for preparing pseudo-single crystal |
| CN103255475A (en) * | 2012-02-15 | 2013-08-21 | 昆山中辰矽晶有限公司 | Silicon crystal ingot containing nucleation promoting particles and method for producing same |
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| CN201442992U (en) * | 2009-07-08 | 2010-04-28 | 济宁凯伦光伏材料有限公司 | Graphite crucible for polycrystalline silicon ingot production |
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2010
- 2010-09-28 CN CN 201010294201 patent/CN102094239A/en active Pending
Patent Citations (6)
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| CN1344336A (en) * | 1998-10-09 | 2002-04-10 | 克里公司 | Preparation method of aluminum nitride, silicon carbide and aluminum nitride: silicon carbide alloy bulk single crystal |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103255475A (en) * | 2012-02-15 | 2013-08-21 | 昆山中辰矽晶有限公司 | Silicon crystal ingot containing nucleation promoting particles and method for producing same |
| CN102787348A (en) * | 2012-08-29 | 2012-11-21 | 天威新能源控股有限公司 | Combined guard board for preparing pseudo-single crystal with high utilization rate and method for preparing pseudo-single crystal |
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Application publication date: 20110615 |