CN102130020A - Method for packaging silicon carbide power device - Google Patents
Method for packaging silicon carbide power device Download PDFInfo
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- CN102130020A CN102130020A CN 201110000503 CN201110000503A CN102130020A CN 102130020 A CN102130020 A CN 102130020A CN 201110000503 CN201110000503 CN 201110000503 CN 201110000503 A CN201110000503 A CN 201110000503A CN 102130020 A CN102130020 A CN 102130020A
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- liner plate
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- silicon carbide
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000004806 packaging method and process Methods 0.000 title abstract 2
- 238000003466 welding Methods 0.000 claims abstract description 42
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000565 sealant Substances 0.000 claims abstract description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 7
- 229910000679 solder Inorganic materials 0.000 claims description 21
- 238000012856 packing Methods 0.000 claims description 20
- 238000005516 engineering process Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 238000004140 cleaning Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 5
- 239000000741 silica gel Substances 0.000 claims description 5
- 229910002027 silica gel Inorganic materials 0.000 claims description 5
- 229910017083 AlN Inorganic materials 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- KMWBBMXGHHLDKL-UHFFFAOYSA-N [AlH3].[Si] Chemical compound [AlH3].[Si] KMWBBMXGHHLDKL-UHFFFAOYSA-N 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 239000013618 particulate matter Substances 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 abstract description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 abstract 1
- 238000005538 encapsulation Methods 0.000 description 7
- 238000013461 design Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005452 bending Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 230000002929 anti-fatigue Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 229910001369 Brass Inorganic materials 0.000 description 1
- 238000004378 air conditioning Methods 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000012938 design process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000006353 environmental stress Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
The invention relates to a method for packaging a silicon carbide power device. In the method, copper-clad aluminum nitride is selected as a material of a lining plate; a layer of molybdenum sheet serving as a welding surface is arranged on the lining plate; and nickel-plated aluminum-based silicon carbide is selected as a material of a substrate. The method comprises the following steps of: welding an aluminum-based silicon carbide chip on the welding surface of the lining plate and welding the lining plate on the substrate; welding one end of a lead with an electrode of the silicon carbide chip and welding the other end of the lead with an electrode of the lining plate; and welding a power wiring terminal on the electrode of the lining plate; and mounting a tube shell, filling a heat expansion buffer layer and a sealant and mounting a tube cap. According to the method, the service temperature of the silicon carbide power device can be effectively improved.
Description
Technical field
The present invention relates to the silicon carbide power device encapsulation field, particularly relate to a kind of method for packing of silicon carbide power device.
Background technology
In a plurality of fields such as automobile, household electrical appliances, industrial equipment, network service, electric power systems, the power loss that reduces inverter and frequency converter all is necessary problem, and this wherein power semiconductor play crucial effects.The performance of traditional silicon power device has all been approached it aspect much theoretical limit, thereby cause being difficult in actual applications satisfy power electronic system to device for power switching in blocking voltage, on state current, operating frequency, and the new demand of aspect such as efficient, high temperature.
In this case, third generation power device based on carborundum is shown one's talent, rely on the superior physical property of carbofrax material, can significantly reduce the loss of power conversions class devices such as inverter and frequency converter, compare with silicon cell, silicon carbide elements can be reduced to power loss below the former half, therefore is also referred to as " the heavily key element in environmental protection epoch ".Since the silicon carbide power Schottky diode comes out, development and application around silicon carbide power device is active day by day, high-quality, large diameter silicon carbide substrates and the element that significantly improves expose in succession, and are successfully applied to fields such as switched-mode power supply, fuel electric motor car inverter, air conditioning frequency converter and solar power system.
In silicon carbide power device was produced, the power model encapsulation technology was particularly crucial.The power model encapsulation technology from the encapsulating structure that solves module, inside modules chip and with the problems such as technological process of choosing, preparing of the interconnection of substrate, all kinds of encapsulating materials, it is minimum that the unfavorable parasitic parameter that making interconnects between the various components and parts in the system is produced is reduced to, the heat that modular circuit produced is easier to outwards distribute, device can bear the impact of the environmental stress when using, have bigger current carrying capacity, overall performance, reliability, the power density of product are improved.The difference of the packaging technology and the installing and fixing method of tube core or chip is pressed in the encapsulation of power model, mainly is divided into crimping structure, Welding Structure and direct copper board structure etc.
Because it is also very ripe at present to make the needed large-sized wafer growth of big electric current carborundum discrete device, epitaxy technology, to realize that at present the broad area device of single wafer is still very difficult.Therefore, the high temperature power model that constitutes with multicore sheet compound mode becomes the object that people pay close attention to for the needs that satisfy big electric current application.
The working temperature of silicon carbide power device can reach 600 ℃, far above 150 ℃ of silicon power device.The hot operation ability of silicon carbide power device makes its advantage that can give full play to high-frequency high-power in actual applications, and still, existing module encapsulation construction can not bear higher temperature, becomes the big bottleneck that silicon carbide power device is used.
Summary of the invention
Technical problem to be solved by this invention is a kind of method for packing of silicon carbide power device, and this method for packing can effectively improve the serviceability temperature of silicon carbide power device.
The method for packing of a kind of silicon carbide power device of the present invention, the aluminium nitride of selecting to cover copper is made lining material, and liner plate is provided with one deck molybdenum sheet as solder side; Select the aluminium silicon carbide of nickel plating to make baseplate material, this method for packing may further comprise the steps: the carborundum chips welding on the solder side of liner plate, is welded on liner plate on the substrate; One end of lead-in wire and the electrode of carborundum chip are welded the electrode welding on the other end and the liner plate; Power terminal is welded on the electrode of liner plate; Shell is installed, is filled thermal expansion resilient coating and sealant, again the mounting pipe lid.
Preferably, before on the solder side of liner plate, this method for packing also comprises with the carborundum chips welding: adopt the method for ultrasonic waves for cleaning+chemical cleaning to remove the particulate matter and the ionic impurity on substrate and liner plate surface.
Preferably, the carborundum chips welding is being specially on the solder side of liner plate: with material is that the scolder of Au-20%Ge is evenly coated on the solder side of liner plate; Adopt the Reflow Soldering technology with the carborundum chips welding on the solder side of liner plate.
Preferably, liner plate is welded on the substrate is specially: adopt that to drip the technology that is coated be that the scolder of 5Sn/95Pb is coated on the solder side of liner plate with material; Adopt the Reflow Soldering technology that liner plate is welded on the substrate.
Preferably, lead-in wire adopts spot-welding technology with the welding of carborundum chip electrode and liner plate electrode, and scolder is selected 5Sn/95Pb for use.
Preferably, power terminal is welded on the electrode of liner plate and is specially: adopt 5Sn/92.5Pb/2.5Ag as scolder, power terminal is welded on the electrode of liner plate.
Preferably, described sealant is an epoxy resin.
Preferably, described thermal expansion resilient coating is a bi-component silica gel.
Preferably, the ratio of the area of carborundum area of chip and liner plate solder side is lower than 1/2.
Compared with prior art, the present invention has the following advantages:
Good treatment of the present invention the thermal expansion matching problem, the design serviceability temperature that makes silicon carbide power device is 250 ℃, far above 125 ℃ of ordinary silicon power device.The present invention selects the similar material of thermal coefficient of expansion as far as possible in the contact-making surface both sides, such as the materials of aluminum carborundum of lining material aluminium nitride and molybdenum sheet, substrate, and the thermal coefficient of expansion of carborundum chip approaching; Between the contact-making surface that thermal coefficient of expansion has big difference, increase the thermal expansion transition zone, such as thermal expansion transition zone between the contact-making surface of liner plate and sealant, effective like this preventing can use silicon carbide power device owing to shrinking breaking of causing under higher temperature.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention, to do to introduce simply to the accompanying drawing of required use among prior art and the embodiment below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills, under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is the method for packing flow chart of silicon carbide power device of the present invention;
Fig. 2 is the liner plate schematic diagram;
Fig. 3 is the substrate schematic diagram;
Fig. 4 is carborundum chip and liner plate welding schematic diagram;
Fig. 5 is liner plate and substrate welding schematic diagram;
Fig. 6 is the wire bonds schematic diagram;
Fig. 7 is a power terminal welding schematic diagram;
Fig. 8 is that shell, pipe cover scheme of installation.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the present invention is further detailed explanation below in conjunction with the drawings and specific embodiments.
Referring to Fig. 1, the method for packing of silicon carbide power device of the present invention is shown, specifically may further comprise the steps.
Step S101, the aluminium nitride (AlN) selecting directly to cover copper are as lining material, and this lining material has high thermal conductivity, thermal coefficient of expansion and carborundum close.See Fig. 2, liner plate 21 is a rectangle.
The aluminium silicon carbide (AlSiC) of selecting nickel plating is as baseplate material, and this baseplate material has high thermal conductivity, and thermal coefficient of expansion and AlN liner plate thermal coefficient of expansion are approaching.See Fig. 3, substrate 22 is a rectangle, is slightly larger than liner plate 21.
Adopt the method for ultrasonic waves for cleaning+chemical cleaning to remove the particulate matter and the ionic impurity on substrate 22 and liner plate 21 surfaces.
Step S102, with the carborundum chips welding on liner plate 21.Select for use Au-20%Ge to make scolder, the fusing point Tm=360 of this scolder ℃, have solderability preferably; Adopt screen printing technique scolder to be evenly coated on the solder side of liner plate 21, adopt the Reflow Soldering technology to realize the welding of carborundum chip 23 and liner plate 21.See Fig. 4, a plurality of carborundum chips 23 minutes are symmetrically welded on liner plate 21 solders side for two groups.This solder side can be molybdenum sheet.
Step S103, liner plate 21 is welded on the AlSiC substrate 22.Select for use 5Sn/95Pb as scolder, the fusing point Tm=308 of this scolder ℃, use the fusing point Tm of scolder to hang down 52 ℃ than step S102.During welding, adopt to drip and to be coated with technology and scolder to be coated on the solder side of liner plate 21, adopt the Reflow Soldering technology to realize the welding (see figure 5) of liner plate 21 and substrate 22 again.
Step S104, welding lead.See Fig. 6, adopt lead-in wire 24 to realize drawing of carborundum chip 23 front electrodes, an end of lead-in wire 24 and the welding of the electrode of carborundum chip 23, the nickel-clad copper electrode welding on the other end and the liner plate 21, scolder is selected 5Sn/95Pb for use.This welding sequence is spot welding, prevents the layer fusing with the preorder welding sequence.
The welding of step S105, power terminal and bending.The selection of material is power terminal 25 of 260 brass, and this power terminal 25 has higher conductivity and mechanical property.See Fig. 7, power terminal 25 is welded on the nickel-clad copper electrode of liner plate 21 that scolder adopts 5Sn/92.5Pb/2.5Ag, the fusing point of this scolder is Tm=287 ℃, uses the fusing point Tm of scolder to hang down 21 ℃ than step S103.During bending, adopt particular manufacturing craft with power terminal 25 bending formings.
Step S106, installation shell 26 are filled resilient coating and sealant, and mounting pipe is covered 27 (see figure 8)s again.Resilient coating is selected bi-component silica gel for use, and this silica gel can keep elasticity for a long time at 250 ℃, and has good electric property and chemical stability; Sealant adopts High temp. epoxy resins, and it has good temperature resistance energy and mechanical support and insulating effect; Shell 26, pipe cover 27 and adopt the DAP plastics to make, and its softening temperature reaches more than 260 ℃, and has excellent mechanical intensity and insulating capacity.
Encapsulation scheme compact conformation of the present invention, simple to operate, it also has good thermal cycle ability and heat-resistant anti-fatigue ability, and it is also very superior to be electrically connected performance simultaneously, because taken into full account following problem in the design process:
Good treatment of the present invention the thermal expansion matching problem, the design serviceability temperature that makes silicon carbide power device is 250 ℃, far above 125 ℃ of ordinary silicon power device.In the design, select the similar material of thermal coefficient of expansion in the contact-making surface both sides, ((thermal coefficient of expansion of thermalexpansioncoefficient=3.3 * 10-6K-1) is approaching with carborundum chip 23 in thermalexpansioncoefficient=3.9 * 10-6K-1) such as liner plate 21 materials A lN as far as possible; Between the contact-making surface that thermal coefficient of expansion has big difference, increase transition zone, such as (thermalexpansioncoefficient=5.4 * 10-6K-1) and epoxy resin (have been filled soft two component silica gel, effectively prevented owing to breaking that contraction causes between the contact-making surface of thermalexpansioncoefficient=40 * 10-6K-1) at the materials A lN of liner plate 21 and molybdenum sheet;
2. the present invention adopts unique welding manner, guarantees the heat dispersion and the electric property of silicon carbide power device, improves resistance to elevated temperatures, thermal shock resistance and the thermal fatigue ability of layer and solder joint.In the design, adopted three welding, the scolder that welding is for the first time adopted is Au-20%Ge, switches on Tm=360 ℃; The scolder that welding is for the second time adopted is 5Sn/95Pb, and fusing point Tm=308 ℃, the scolder that welding is for the third time adopted is 5Sn/92.5Pb/2.5Ag, fusing point Tm=287 ℃; These scolders all have solderability and weld strength preferably, and the scolder fusing point that the back operation adopts is all once low more than 20 ℃ than preceding, when having guaranteed each welding like this before the robustness and the reliability of operation layer.
Weld layer heat shock resistance and the fatigue behaviour fusing point Tm that is decided by scolder at high temperature is closely related, and Tm=287 ℃ of the scolder 5Sn/92.5Pb/2.5Ag that the fusing point of employing is minimum is apparently higher than 250 ℃.In addition, it is good that the scolder of selecting for use all has solderability, and wetability is good, and anti-fatigue ability is strong, characteristics such as creep strength height.
3. the present invention, makes the carborundum chip operation under design temperature by rational heat dissipation design, and guarantees the safety of encapsulating structure comparatively under the serious situation in device power consumption.Through calculating, if adopt water-cooling pattern, and the carborundum chip of 12 1cm * 1cm of hypothesis encapsulation, and the area ratio of chip and molybdenum sheet is 1: 2, and the thermal resistance of device is about 0.05KW-1; According to designing requirement, the chip operation junction temperature is 250 ℃, supposes that ambient temperature is 25 ℃, and the heat-sinking capability of device is 450W/cm2 so, can satisfy application request fully.
The present invention can be widely used in carborundum two ends and three-terminal power device.
The above only is a preferred implementation of the present invention; should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention; can also make some improvements and modifications; also can above-mentioned embodiment make up, these technical schemes of improving, retouching and being combined to form also should be considered as protection scope of the present invention.
Claims (9)
1. the method for packing of a silicon carbide power device is characterized in that, the aluminium nitride of selecting to cover copper is made lining material, and liner plate is provided with one deck molybdenum sheet as solder side; Select the aluminium silicon carbide of nickel plating and make baseplate material, this method for packing may further comprise the steps:
The carborundum chips welding on the solder side of liner plate, is welded on liner plate on the substrate;
One end of lead-in wire and the electrode of carborundum chip are welded the electrode welding on the other end and the liner plate;
Power terminal is welded on the electrode of liner plate;
Shell is installed, is filled thermal expansion resilient coating and sealant, again the mounting pipe lid.
2. method for packing as claimed in claim 1 is characterized in that, before on the solder side of liner plate, this method for packing also comprises with the carborundum chips welding:
Adopt the method for ultrasonic waves for cleaning+chemical cleaning to remove the particulate matter and the ionic impurity on substrate and liner plate surface.
3. method for packing as claimed in claim 1 is characterized in that, the carborundum chips welding is specially on the solder side of liner plate:
With material is that the scolder of Au-20%Ge is evenly coated on the solder side of liner plate;
Adopt the Reflow Soldering technology with the carborundum chips welding on the solder side of liner plate.
4. method for packing as claimed in claim 1 is characterized in that, liner plate is welded on the substrate be specially:
Adopt dripping the technology that is coated with is that the scolder of 5Sn/95Pb is coated on the solder side of liner plate with material;
Adopt the Reflow Soldering technology that liner plate is welded on the substrate.
5. method for packing as claimed in claim 1 is characterized in that, lead-in wire adopts spot-welding technology with the welding of carborundum chip electrode and liner plate electrode, and scolder is selected 5Sn/95Pb for use.
6. method for packing as claimed in claim 1 is characterized in that, power terminal is welded on the electrode of liner plate to be specially:
Adopt 5Sn/92.5Pb/2.5Ag as scolder, power terminal is welded on the electrode of liner plate.
7. method for packing as claimed in claim 1 is characterized in that, described sealant is an epoxy resin.
8. method for packing as claimed in claim 1 is characterized in that, described thermal expansion resilient coating is a bi-component silica gel.
9. as each described method for packing of claim 1-8, it is characterized in that the ratio of the area of carborundum area of chip and liner plate solder side is lower than 1/2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110000503 CN102130020A (en) | 2011-01-04 | 2011-01-04 | Method for packaging silicon carbide power device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110000503 CN102130020A (en) | 2011-01-04 | 2011-01-04 | Method for packaging silicon carbide power device |
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| CN102130020A true CN102130020A (en) | 2011-07-20 |
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| CN 201110000503 Pending CN102130020A (en) | 2011-01-04 | 2011-01-04 | Method for packaging silicon carbide power device |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104392942A (en) * | 2014-11-05 | 2015-03-04 | 天津大学 | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste |
| CN105118790A (en) * | 2015-07-23 | 2015-12-02 | 淄博美林电子有限公司 | Preparation method of high temperature resistant packaging framework of silicon carbide diode |
| CN105226030A (en) * | 2015-10-13 | 2016-01-06 | 济南市半导体元件实验所 | High-power silicon carbide diode encapsulating structure and packaging technology |
| CN110142475A (en) * | 2019-05-07 | 2019-08-20 | 国电南瑞科技股份有限公司 | A Fixing Welding Method Without Tooling for High Power IGBT Module |
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | A crimping type SiC power module packaging structure |
| CN111540718A (en) * | 2020-05-07 | 2020-08-14 | 全球能源互联网研究院有限公司 | A package structure of a silicon carbide device |
| CN115722749A (en) * | 2022-11-16 | 2023-03-03 | 深圳市森国科科技股份有限公司 | Local induction heating diffusion welding method and power module packaging method |
| CN120527313A (en) * | 2025-07-23 | 2025-08-22 | 常州佳讯光电产业发展有限公司 | TVS diode based on molybdenum sheet |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219773A (en) * | 1997-10-24 | 1999-06-16 | 恩尼技术公司 | kilowatt power tube |
| US20040211980A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| CN101107707A (en) * | 2005-01-20 | 2008-01-16 | 联合材料公司 | Component for semiconductor device and manufacturing method thereof |
| CN101443910A (en) * | 2006-05-12 | 2009-05-27 | 本田技研工业株式会社 | Power semiconductor module |
| JP2010509771A (en) * | 2006-11-03 | 2010-03-25 | クリー インコーポレイテッド | Power switching semiconductor devices including rectifying junction shunts |
-
2011
- 2011-01-04 CN CN 201110000503 patent/CN102130020A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1219773A (en) * | 1997-10-24 | 1999-06-16 | 恩尼技术公司 | kilowatt power tube |
| US20040211980A1 (en) * | 2003-04-24 | 2004-10-28 | Sei-Hyung Ryu | Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same |
| CN101107707A (en) * | 2005-01-20 | 2008-01-16 | 联合材料公司 | Component for semiconductor device and manufacturing method thereof |
| CN101443910A (en) * | 2006-05-12 | 2009-05-27 | 本田技研工业株式会社 | Power semiconductor module |
| JP2010509771A (en) * | 2006-11-03 | 2010-03-25 | クリー インコーポレイテッド | Power switching semiconductor devices including rectifying junction shunts |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104392942A (en) * | 2014-11-05 | 2015-03-04 | 天津大学 | Method for encapsulating high-power IGBT device through performing non-pressure low-temperature sintering on nano silver soldering paste |
| CN105118790A (en) * | 2015-07-23 | 2015-12-02 | 淄博美林电子有限公司 | Preparation method of high temperature resistant packaging framework of silicon carbide diode |
| CN105118790B (en) * | 2015-07-23 | 2017-12-29 | 淄博美林电子有限公司 | A kind of high temperature packaging framework preparation method of silicon carbide diode |
| CN105226030A (en) * | 2015-10-13 | 2016-01-06 | 济南市半导体元件实验所 | High-power silicon carbide diode encapsulating structure and packaging technology |
| CN105226030B (en) * | 2015-10-13 | 2018-12-18 | 济南市半导体元件实验所 | High-power silicon carbide diode encapsulating structure and packaging technology |
| CN110142475A (en) * | 2019-05-07 | 2019-08-20 | 国电南瑞科技股份有限公司 | A Fixing Welding Method Without Tooling for High Power IGBT Module |
| CN111128898A (en) * | 2019-12-13 | 2020-05-08 | 深圳基本半导体有限公司 | A crimping type SiC power module packaging structure |
| CN111540718A (en) * | 2020-05-07 | 2020-08-14 | 全球能源互联网研究院有限公司 | A package structure of a silicon carbide device |
| CN115722749A (en) * | 2022-11-16 | 2023-03-03 | 深圳市森国科科技股份有限公司 | Local induction heating diffusion welding method and power module packaging method |
| CN120527313A (en) * | 2025-07-23 | 2025-08-22 | 常州佳讯光电产业发展有限公司 | TVS diode based on molybdenum sheet |
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Application publication date: 20110720 |