CN102187451A - Method for producing a stack of semi-conductor thin films - Google Patents
Method for producing a stack of semi-conductor thin films Download PDFInfo
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- CN102187451A CN102187451A CN2009801414425A CN200980141442A CN102187451A CN 102187451 A CN102187451 A CN 102187451A CN 2009801414425 A CN2009801414425 A CN 2009801414425A CN 200980141442 A CN200980141442 A CN 200980141442A CN 102187451 A CN102187451 A CN 102187451A
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- 238000004519 manufacturing process Methods 0.000 title abstract description 4
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- 238000000034 method Methods 0.000 claims abstract description 94
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- 239000000615 nonconductor Substances 0.000 claims abstract description 9
- 239000011248 coating agent Substances 0.000 claims description 194
- 238000000576 coating method Methods 0.000 claims description 194
- 238000000137 annealing Methods 0.000 claims description 24
- 230000004888 barrier function Effects 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 12
- 238000004140 cleaning Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000000126 substance Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000012545 processing Methods 0.000 claims description 9
- 238000000280 densification Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 46
- 239000000463 material Substances 0.000 description 21
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- 229910052739 hydrogen Inorganic materials 0.000 description 15
- 230000005587 bubbling Effects 0.000 description 13
- 230000001186 cumulative effect Effects 0.000 description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
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- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
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- 229910017214 AsGa Inorganic materials 0.000 description 1
- YZCKVEUIGOORGS-IGMARMGPSA-N Protium Chemical compound [1H] YZCKVEUIGOORGS-IGMARMGPSA-N 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
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- 239000010453 quartz Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
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Abstract
Method for producing stacked UTBOX-like semi-conductor structures, said method comprising: a) the formation of an electrical insulator layer on a donor substrate, b) the introduction of elements into the donor substrate through the insulator layer, c) the formation of an electrical insulator layer, on a second substrate known as final substrate, d) the bonding of the two substrates, the two insulator layers limiting the diffusion of water and forming an insulator layer buried between the two substrates, of thickness less than 50 nm, the donor oxide layer having, during the bonding, a thickness at least equal to that of the bonding oxide layer.
Description
Background technology
Comprise in manufacturing in the field of the SOI type structure of imbedding sull (less than 1 μ m) between semiconductor material thin film and final substrate, in the oxide skin(coating) size reduction process, the main problem that oxide skin(coating) occurred is that the bonded interface place forms defective.
The existence of these defectives may be fatal for final semiconductor structure.Some are arranged in these defectives is the hydrogen blister that occurs in the annealing temperature process (people such as S.Mack, Journal of Electrochemical Society.Vol.144, p.1106,1997).
Will and produce hydrogen or relevant any other reaction residue kind with the material reaction of substrate during the semi-conducting material contact of any in the hydrone that in the molecular linkage process, is brought to bonded interface and two substrates with semi-conducting material.In being higher than 400 ℃ the annealing process of temperature, become key hydrogen (bonded hydrogen) desorb (desorb) also to become gas.Along with the rising of temperature, pressure increases and can form bubbling.Hereinafter, water and the reaction residue that may form between one of the substrate of bubbling are collectively referred to as " hydrogen ", but also may relate to other gas.
When the substrate of imbedding oxide skin(coating) and be positioned at the either side of imbedding oxide skin(coating) had bigger thickness, the formation of bubbling was not breakneck for the quality of SOI type structure.On the other hand, the formation of these defectives is real dangerous for having the ultra-thin formation of imbedding UTBOX (Ultra Thin Buried Oxide, the ultra-thin oxide of imbedding) the type structure of oxide (BOX) that for example is thinner than 50nm or 25nm or 15nm.
Illustrate this problem among Fig. 4, shown that wherein defectoscopy (Y-axis) conduct of the SOI type structure of three groups of samples is called as the function of the oxide skin(coating) thickness (X-axis) of " BOX ".Measurement colony in the curve A relates to the method according to prior art, and two other colony (curve B and curve C) relates to the method according to this invention.To explain curve B and curve C with reference to description of the invention hereinafter.
The data of reference curve A, " BOX " oxide thickness are that the sample of 50nm is more more slightly near the defective of the sample of 140nm than imbedding oxide thickness.When this thickness further reduced, near 15nm the time, it is very high that defect concentration becomes.This shows that for the oxide thickness of the 30nm or the lower order of magnitude it is very difficult making the UTBOX structure according to the known method of prior art.
A kind of scheme that is used for addressing this problem is not carry out any processing under strictness is higher than 400 ℃ temperature T.
But this scheme has hindered and must occur in bonded interface fixed that is higher than 400 ℃, is generally about 700 ℃ to 1300 ℃ temperature.In addition, this method has limited the processing type that is allowed in the industrial use of the device that is obtained, and has therefore also limited the application of this UTBOX device.
Therefore to seek a kind of method that is used to overcome this problem.
Summary of the invention
The objective of the invention is to overcome the problems referred to above, promptly improve the defective after the UTBOX type structure assembling, particularly with the relevant defective of formation of bubbling type defective.
In order to realize this purpose, the present invention proposes from forming the layer that backing material such as the gaseous reaction product of hydrogen removes the water that bonded interface occurs with the water reaction.This is to realize by following mode: form the layer of insulator material that has the block water diffusion or limit the characteristic of this diffusion before the bonding on each bonded substrate, these insulator layers are positioned at the bonded interface place, form then and imbed insulator layer.Have based on SiO
2The situation of the UTBOX structure of imbedding oxide under, this is imbedded insulator layer and just is equivalent to imbed oxide skin(coating).
More specifically, the present invention at first relates to a kind of method that is used to make the UTBOX N-type semiconductor N structure of piling up, and described method comprises:
A) on donor substrate, form first electrical insulator layer that is called as alms giver's oxide that diffuseing to form of water is stopped or can limit this diffusion,
B) before or after forming described alms giver's oxide skin(coating), in described donor substrate, introduce element, form the reduction layer,
C) form second electrical insulator layer that is called as the bonding oxide that diffuseing to form of water is stopped or can limit this diffusion being called as on second substrate of final substrate;
D) two substrates of bonding, two electrical insulator layer are contacted and form being called as between two substrates together and imbed the insulator layer of imbedding of oxide skin(coating), described insulator layer makes that in bonding process the thickness of described alms giver's oxide skin(coating) equals the thickness of described bonding oxide skin(coating) at least
After the bonding, the described thickness (e that imbeds insulator layer
t) less than 50nm, advantageously less than 20nm, preferably less than 15nm or 12nm.
In the method according to the invention, described insulator layer is to be made by the material that diffuseing to form of water is stopped or limit this diffusion.Within the scope of the invention, there is not the processing that may make the barrier properties variation of the diffusion of the water of these insulator layers in this naming method (denomination) expression except the ion implantation step is given the deterioration that described alms giver's oxide skin(coating) brings.
Insulator is dielectric or similar dielectric insulator preferably, and it can be nitride layer or advantageously oxide skin(coating), for example silicon dioxide.In ensuing description, will adopt the example of oxide skin(coating).
The insulator of Zhi Hanging-insulator bonding can reduce the reaction power that hydrogen produces like this, therefore limits the formation of bubbling.In fact, comprise the H that introduces at the bonded interface place in the assembling process between two insulator layers
2The molecule of O; React to form hydrogen group (hydrogen radical) before at the material with one of substrate, hydrone must pass these insulator layers.Therefore have H
2The barrier properties of the diffusion of O or the oxide skin(coating) that limits the characteristic of this diffusion slow down the formation of hydrogen, and then slow down the formation of bubbling, have improved the reliability of the semiconductor structure that forms thus.
Can be by the deposition insulator or by forming insulator layer one of them (alms giver's oxide and/or bonding oxide) at least with one of them the surface reaction at least of substrate.
In the method according to the invention, can introduce element to donor substrate, so bonding oxide skin(coating) advantageously strictness is thinner than alms giver's oxide skin(coating) by alms giver's oxide skin(coating).
In fact, in the method according to the invention, final oxide or imbed oxide skin(coating) and form by contacted two oxide skin(coating)s.In the bonding step, in the method according to the invention, the thickness of oxide skin(coating) to be assembled than can so that be derived from alms giver's oxide skin(coating) oxide skin(coating) the relative thickness strictness greater than the cumulative thickness of oxide skin(coating) to be assembled 50% and be less than or equal to oxide skin(coating) to be assembled cumulative thickness 70% or 80% or 85% or 95%.
Advantageously, the relative thickness of alms giver's oxide skin(coating) to be assembled between the cumulative thickness of oxide skin(coating) to be assembled 60% and 85% between.Preferably, this relative thickness between final oxide thickness 70% to 80% between, for example 75%.
In the method according to the invention, before making oxide skin(coating) contact and assembling substrate, can carry out the step of one of them (preferably, can clean whole two substrates) at least of cleaning substrate.Can carry out the etching of oxide then, cause the thickness of processed oxide skin(coating) to reduce.In order to compensate reducing of this oxide skin(coating) thickness, the original depth of oxide skin(coating) is selected as obtaining according to the present invention after cleaning, particularly the basis oxide thickness of pointed ratio above.So the cumulative thickness of initial two oxide skin(coating)s that form is greater than the thickness of imbedding oxide of resulting devices.After this cleaning, the structure of insulating material does not change, and oxide is to be made by the material that diffuseing to form of water stopped always.In other words, the gross thickness of bonding oxide skin(coating) and alms giver's oxide skin(coating) is preferably more than the thickness of imbedding oxide skin(coating), and cleaning step makes the thickness that is positioned at the insulator layer that occurs on the substrate that is cleaned reduce.
In the method according to the invention, donor substrate and/or final substrate can be made by semi-conducting material, are for example made by silicon.Two substrates at least one of them, and may whole two substrates can make by quartzy, sapphire or polymer.Final substrate can be made by the material such as semi-conducting material different with the material of donor substrate.Final substrate can be made by the material with the thermal coefficient of expansion (TEC) that is different from one of donor substrate, and perhaps the material X by other makes, and wherein H can take place material X
2O+X → XO
2+ H
2Type reacts or forms other gaseous reaction product.
Then, by the fracture of substrate, for example by being named as Smart-Cut
The substrate cracking of type can the attenuate donor substrate.Can (S.S.Iyer and A.J.Auberton-Herv é compile and edit at for example B.Aspar and A.J.Auberton-Herv é " Silicon Wafer Bonding Technology for VLSI and MEMS applications ", 2002, INSPEC, London, the 3rd chapter, 35-52 page or leaf) carries out this method under the condition of describing in the literary composition.
Can in the heat treatment process under being lower than the temperature of 350 ℃ or 400 ℃, carry out attenuate.
Advantageously, can in such as the low temperature heat treatment that is lower than under 400 ℃ the temperature, carry out the fracture of substrate; More details will provide hereinafter.
After attenuate, can use the heat treatment that is called as annealing, its temperature is between 700 ℃ and 1300 ℃, preferably between 900 ℃ and 1200 ℃, the temperature rise slope is greater than 10 ℃/s or advantageously greater than 20 ℃/s, so as fixed bonded interface and make device between 400 ℃ and 700 ℃, advantageously the open-assembly time in the temperature between 400 ℃ and 900 ℃ (this forms reaction power corresponding to bubbling very high and be most disadvantageous in the temperature range of the quality of final semiconductor structure) short as much as possible.
Being higher than 700 ℃ or the annealing that preferably is higher than under 900 ℃ the temperature can make the hydrogen of capturing at the interface that is present between bonded interface place or substrate and the oxide skin(coating) dissipate by the diffusion of semi-conducting material.
For silicon, in 400 ℃-900 ℃ temperature range, can form bubbling owing to discharging Gaseous Hydrogen.Thereby the pressure that produces makes the material deformation of two bonded substrate and forms bubbling, and may cause final structure to be split in follow-up processing procedure or in the fracture heat treatment of substrate or the fixed heat treatment process.(at least 10 ℃/s) make and can pass through this critical temperature interval as early as possible, pressure that therefore can be in bubbling makes device reach the temperature (near 900 ℃) that hydrogen spreads before weakening in semi-conducting material in irremediable mode to the high temperature ramp of above being mentioned.
It should be noted that described critical temperature interval depends primarily on the thickness and the type of material of superficial layer.For example, for for the silicon face layer thickness of 10nm, can be between 350 ℃ and 700 ℃ between this critical zone, rather than 400 ℃-900 ℃ interval for the device with the oxide skin(coating) between 10nm and the 20nm.If employed substrate is based on SiGe or AsGa or other semi-conducting material, then should also can change in the interval.But herein, its purpose also is:
-make oxide is diffuseed to form the thickness distribution optimization that stops or limit the insulator layer of this diffusion,
-heat treatment time included in the critical temperature interval is minimized.
If application the method according to this invention then can be determined the critical temperature interval more accurately by test.
Description of drawings
Figure 1A to Fig. 1 F represents first embodiment of the method according to this invention.
Fig. 2 A to Fig. 2 G represents that according to a second embodiment of the method according to the invention wherein the thickness of the oxide of Xing Chenging is higher than the required thickness of resulting devices.
Fig. 3 has shown that the inventor obtains under the situation of SiO2 and silicon substrate defective result of experiment as thickness with the function of the ratio of the final thickness of oxide of oxide skin(coating).
Fig. 4 has shown the defective result of experiment of function of the thickness of the final oxide skin(coating) of conduct that the inventor obtains, and shows that the method according to this invention sets up the effect of the UTBOX structure with protoxide thickness.
Embodiment
The present invention relates to a kind of method that is used to make the system of piling up the SOI type semiconductor layer, more specifically, this system is the UTBOX type, and in other words, it has the insulator layer of imbedding of ultrathin.
According to two embodiment among Figure 1A to Fig. 1 F and Fig. 2 A to Fig. 2 G this method is described, any Reference numeral in different figure corresponding to components identical.
First embodiment (Figure 1A to Fig. 1 F) relates to being used to make and has the thin method of imbedding the soi structure of insulator layer that is thinner than 50nm; This insulator layer is advantageously less than 20nm, and preferably less than 15nm, it can also be less than 10nm or 7nm.
Insulator is preferably electrical insulator, and it can be a nitride layer, perhaps advantageously oxide skin(coating), for example silicon dioxide.In the remainder of specification, adopted the example of oxide skin(coating), but this is not restrictive.As indicated above, in the method according to the invention, in bonding process, insulator layer is to be made by the material that stops or limit this diffusion that can form the diffusion of water.
First embodiment of the method according to this invention forms thin oxide layer 4 (Figure 1A) in the surface of the substrate that is called as donor substrate 2, and donor substrate 2 is for example made by semi-conducting material, is advantageously made by silicon.This oxide skin(coating) that is called as alms giver's oxide skin(coating) has thickness e 1, and can form by for example thermal oxidation of donor substrate 2, perhaps if necessary, forms by oxidate.
Before or after forming alms giver's oxide skin(coating) 4, introduce doped chemical to form reduction layer 21 in donor substrate, advantageously, this is that injection by atom or ion elements realizes, for example, for example carry out the common injection (Figure 1B) of helium and hydrogen by alms giver's oxide skin(coating) 4.
In order to come attenuate, can advantageously introduce this reduction layer 21 by substrate cracking.For this embodiment of the present invention and for ensuing embodiment, the method for this substrate cracking can be " Smart Cut
TM" the substrate cracking Method type.For example (S.S.Iyer and A.J.Auberton-Herv é compile and edit at the article " Silicon Wafer Bonding Technology for VLSI and MEMS applications " of B.Aspar and A.J.Auberton-Herv é, 2002, INSPEC, London, the 3rd chapter, 35-52 page or leaf) in this method has been described.
The density of every kind of doped chemical being introduced can be advantageously between 1.10
+ 16At.cm
-3With 1.10
+ 19At.cm
-3Between.In being to use 1.10
+ 14At.cm
-2To 1.10
+ 16At.cm
-2The implantation dosage of the order of magnitude is suitable for the thickness e 1 of alms giver's oxide skin(coating), is suitable for the estimated density of every kind of doped chemical, and the required thickness of the semi-conducting material after being suitable for rupturing 20.
Then or concurrently, perhaps before operation mentioned above, for example thermal oxidation by final substrate 3, the perhaps deposition by oxide if necessary forms the thin oxide layer 5 that is called as the bonding oxide skin(coating) being called as on second substrate of final substrate 3.Thickness e 2 tools of this oxide skin(coating) are less than or equal to the thickness of alms giver's oxide skin(coating).This substrate is advantageously made by semi-conducting material, but also can be made by other materials, for example make by quartz, and the perhaps substrate of any type of making by material X, wherein bonding reaction causes the oxidation of following type: H
2O+ material X → XO
2+ H
2, perhaps any other gaseous reaction product.
Assemble two substrates 2 and 3 then, make alms giver's oxide skin(coating) 4 contact with bonding oxide skin(coating) 5 (Fig. 1 D).Oxide-oxide type bonding takes place then, generation is called as final oxide or imbeds the oxide skin(coating) of oxide skin(coating), it forms (in Fig. 1 F, representing this composite bed with imbedding oxide skin(coating) 45) by alms giver's oxide skin(coating) 4 and bonding oxide skin(coating) 5 between two substrates 2 and 3.
The thickness e of imbedding oxide skin(coating) of Huo Deing like this
tTherefore be less than or equal to 50nm, advantageously be less than or equal to 20nm, preferably be less than or equal to 15nm, for example 11.7nm.The thickness distribution of oxide skin(coating) to be assembled makes that imbedding the relative thickness that oxide skin(coating) 45 is derived from the part of alms giver's oxide skin(coating) 4 can equal 50%, perhaps introducing by alms giver's oxide skin(coating) under the situation of doped chemical, 50% of strict cumulative thickness greater than oxide skin(coating) to be assembled, and be less than or equal to oxide skin(coating) to be assembled cumulative thickness 95%.
Within the scope of the invention, " alms giver's oxide skin(coating) with imbed the relative thickness that oxide skin(coating) is compared " refers to the thickness of alms giver's oxide skin(coating) and the ratio of the thickness of imbedding oxide skin(coating).Do not providing under the situation of details, the relative thickness of layer A is layer A and imbed the relative thickness that oxide skin(coating) is compared.
In the method according to the invention, or form oxide skin(coating), or the deposition by oxide (for example by CVD or pass through ALD) forms oxide skin(coating) by the step (for example by at high temperature substrate being exposed in the oxygen-enriched environment) of controlled oxidation.On the contrary, it not same being fit to only by substrate being exposed to the native oxide layer that forms in the surrounding air.In fact, this oxide is relative porous, can't form effective diffusion impervious layer.But, can consider to be called as the annealing of densification annealing (densification annealing) (for example between 200 ℃ and 800 ℃ by execution, under the neutral atmosphere, the time can from a few minutes by several hours) characteristic of this native oxide layer being given this " diffusion barrier ".Generally speaking, preferably make its some deposition oxide that can't form the porous degree of effective water diffusion barrier carry out this densification annealing to native oxide and to having.
Introducing by alms giver's oxide skin(coating) under the situation of doped chemical, the cumulative thickness of imbedding the oxide skin(coating) that this relative thickness that oxide skin(coating) 45 is derived from the part of alms giver's oxide skin(coating) 4 advantageously assembles in bonding process (in other words, imbed the thickness of oxide skin(coating)) 60% and 95% between, the cumulative thickness of the oxide skin(coating) of preferably in bonding process, assembling 70% and 80% between.For example, if the thickness e 2 of bonding oxide 5 to be assembled is 3.3nm, the thickness e 1 of alms giver's oxide 4 then to be assembled can be 8.4nm.In the method according to the invention, imbedding the thickness of oxide skin(coating) also can be less than 10nm or less than 7nm.
Then, in the method according to the invention, by the substrate 2 of assembling and 3 and the device formed of their different table surface layer can stand annealing so that make the level place fracture (Fig. 1 E) of donor substrate at reduction layer 21.For example can adjust cracking method, make annealing temperature be no more than 400 ℃, advantageously be no more than 350 ℃.
Afterwards, can the plane of disruption be polished (Fig. 1 F) if necessary.
Before polishing or afterwards, can come fixed bonded interface by annealing.
Advantageously, after donor substrate is split, but before any fixed annealing of bonded interface or as an alternative, resulting semiconductor structure can be in the temperature between 700 ℃ and 1300 ℃, preferably the temperature between 900 ℃ and 1200 ℃ stands the stabilizing annealing at interface, and temperature is to increase greater than 10 ℃/second, the temperature ramp (temperature ramp) that is preferably greater than 20 ℃/second.This stabilizing annealing step can be carried out after polishing step.Advantageously, this annealing occurs in before the polishing step, after the substrate cracking step.
As indicated above, between between 700 ℃ and 1300 ℃, preferably this annealing between 900 ℃ and 1200 ℃ makes Gaseous Hydrogen to spread by substrate.Higher temperature ramp as indicated above (at least 10 ℃/s) can make in the temperature increase process 400 ℃-700 ℃, advantageously pass through time minimization in the critical temperature interval between 400 ℃ and 900 ℃, reach above-mentioned hydrogen diffusion temperature interval before therefore can the pressure in bubbling making final semiconductor structure reduction in irremediable mode.Therefore, the parameter of control annealing, with in 400 ℃ of-700 ℃ of scopes, advantageously the open-assembly time in 400 ℃ of-900 ℃ of scopes was limited in less than 120 seconds, for example preferably at about 30 seconds or less than 30 seconds.The permission crash time according to the present invention in temperature range is the function of the thickness of imbedding oxide skin(coating) 45 of final structure: the thickness of imbedding oxide skin(coating) 45 is thin more, and is many more to the restriction of open-assembly time.For the thickness of 10nm, the method according to this invention, the maximum exposure time in the critical temperature interval is between 20 and 30 seconds; For the thickness of 15nm, this time, for the oxide thickness of 25nm, the crash time was near 2 minutes or even higher less than 30 seconds.
Among Fig. 2 A to Fig. 2 G the second embodiment of the present invention has been described.Except oxide skin(coating) 4 ', 5 ' deposit thickness e1 ' and e2 ', the principle of this embodiment is identical with first embodiment.
In this embodiment of the present invention, the gross thickness of deposition oxide (e1 '+e2 ') is higher than the final thickness (e of the oxide of imbedding oxide skin(coating) 45 expections of final structure
t).Only describe the step different with the first embodiment of the present invention, the layer 45 of Fig. 2 G is made up of resulting alms giver's oxide skin(coating) 4 and bonding oxide skin(coating) 5 after oxide skin(coating) 4 ' represented among Fig. 2 D to Fig. 2 F and the 5 ' attenuate.
Before the bonding step, shown in Fig. 2 E, comprise the substrate 2 of the oxide skin(coating) 4 ' of thickness e 1 ' and the oxide skin(coating) 5 ' that thickness is e2 ' and a substrate in the substrate 3 and/or another substrate experience respectively as the described cleaning step of Fig. 2 D, clean and except other act on, have etching and then attenuate is present in the oxide skin(coating) 4 ' of the substrate surface of handling by cleaning and/or 5 ' effect.
But,, insulator layer is not carried out the processing of the water diffusion in all or part of insulator layer of any promotion for this cleaning or for any other step of this method.Especially, be not included in the plasma of carrying out in order to improve the adhesion in the bonding process before the bonding in the method according to the invention, these steps may promote water to pass through the diffusion of insulator layer.
Preferably, in the forming process of alms giver's oxide skin(coating) 4 ' and bonding oxide skin(coating) 5 ', original depth (e1 ' and/or e2 ') has been considered final thickness e1 and the e2 that the attenuate that produced in the cleaning step (if present) and alms giver's oxide skin(coating) 4 and bonding oxide skin(coating) 5 are required.As first embodiment, imbed the final thickness e of the oxide of oxide skin(coating) 45
tBe less than or equal to 50nm, advantageously be less than or equal to 20nm, preferably be less than or equal to 15nm, perhaps for example less than 10nm or 7nm.In addition, after the cleaning and attenuate of initial oxide layer, the thickness e 1 of the oxide skin(coating) 4 that will assemble in the bonding process is 50% with the relative thickness that the thickness e of the oxide skin(coating) 52 feasible oxide skin(coating)s 4 that are derived from alms giver's oxide skin(coating) 4 ' are compared with the cumulative thickness of two oxide skin(coating)s in the bonding process, and/or particularly introducing by alms giver's oxide skin(coating) under the situation of doped chemical, strictly greater than the cumulative thickness e of oxide skin(coating) to be assembled 4,5
t50% and be less than or equal to the cumulative thickness e of oxide skin(coating) to be assembled 4,5
t95%.This relative thickness of alms giver's oxide skin(coating) to be assembled is advantageously between the cumulative thickness e of oxide skin(coating) to be assembled
t60% and 80% between, preferably between the cumulative thickness e of oxide skin(coating) to be assembled
t70% and 80% between, for example 75%.
In the method according to the invention, the material below the thickness that uses alms giver's oxide in the assembling process of substrate can limit hydrone and be present in oxide skin(coating) more than or equal to the oxide-oxide bonding of the thickness of bonding oxide at least contacts.Have only the oxide of working as to keep its water diffusion barrier property, that is to say oxide not through reducing the processing of water diffusion barrier property, perhaps alms giver's oxide skin(coating) or whole two oxide skin(coating)s have experienced dosage less than 6 10
16At/cm
2, even less than 3 10
16At/cm
2The ion implantation step time be only so.Therefore, prevented that the formation of hydrogen group is because hydrone may spread by oxide skin(coating) by directly forming hydrogen group with the semi-conducting material reaction.In the advantageous embodiment of the method according to this invention, oxide skin(coating) 4 ', 5 ' and imbed the thickness e of oxide skin(coating) 45
tThe relative thickness of comparing makes that in bonding process the relative thickness strictness of alms giver's oxide skin(coating) 4 is greater than 50% and be less than or equal to 95%, advantageously between 60% and 85%, preferably between 70% and 80%.
This distribution of forming the thickness of the oxide of imbedding oxide skin(coating) between donor substrate 2 and the reception substrate 3 can have higher oxide thickness in a side of alms giver's oxide 4.This can compensating donor's oxide 4 deficiency; This oxide is deterioration (Figure 1B and 2B) in the process of introducing doped chemical, has reduced it and has stopped H
2The characteristic of O diffusion.The bonding oxide skin(coating) has the not barrier properties of variation, and it needn't have higher thickness with the diffusion barrier of formation with the formed diffusion barrier equivalence of alms giver's oxide skin(coating).0.5nm the thickness to the bonding oxide skin(coating) of 5nm or 10nm, for example 1nm is enough to form effective diffusion barrier.In this case, it may be favourable being limited in the overall doped chemical dosage of introducing by the step of alms giver's oxide skin(coating) 4 injections.Therefore can will should be limited in less than 3 10 by overall situation dosage
16At/cm
2
Set up the alms giver oxide skin(coating) 4 thicker according to the present invention, need not to change the final thickness e that imbeds oxide skin(coating) 45 than bonding oxide skin(coating) 5
t, can improve and imbed the barrier effect that oxide skin(coating) is derived from the part of alms giver's oxide skin(coating) 4.Therefore, thickness is selected as, and need not to change the final thickness of imbedding oxide skin(coating) 45, just can make the alms giver's oxide skin(coating) 4 and the bonding oxide 5 of final substrate 3 sides obtain suitable barrier effect.Except in implantation step (if present), any oxide skin(coating) all can deterioration in its manufacture process or in any other the treatment step.Particularly before bonding, oxide skin(coating) does not all bear any activating plasma.
After any attenuate that for example cleaning step (if present) is caused, the distribution between the thickness of layer to be assembled is selected as the function of following water diffusion barrier property difference between the two:
The intact bonding oxide skin(coating) 5 that is deposited on-final the substrate 3, and
-may be owing to introducing doped chemical and alms giver's oxide skin(coating) 4 of deterioration in the donor substrate 2.
Therefore the selection of relative thickness depends on the material of employed implantation dosage and employed composition oxide.
Provided the experimental result that the inventor obtains among Fig. 3, under situation, provided final ratio of defects (Y-axis) after bonding and the annealing as the function of the relative thickness (X-axis) of alms giver's oxide skin(coating) of the final oxide skin(coating) of composition (be also referred to as and imbed oxide skin(coating)) and/or bonding oxide skin(coating) based on the UTBOX type soi structure of silicon and silicon dioxide.
The thickness of bonding oxide skin(coating) equals the situation that " 0 " only is derived from substrate bonding corresponding to final oxide skin(coating) and is formed on the alms giver's oxide on the donor substrate before assembling with the ratio (the below X-axis in this curve chart) of the thickness of final oxide skin(coating).
In the same way, the thickness of bonding oxide skin(coating) equals " 1 " is derived from the bonding oxide skin(coating) fully corresponding to final oxide skin(coating) situation with the ratio of the thickness of final oxide skin(coating).
Between these two extreme values, the relative thickness that the bonding oxide skin(coating) is compared with the thickness of final oxide skin(coating) increases.
The thickness of alms giver's oxide skin(coating) and the ratio of the thickness of final oxide skin(coating) are also represented in the top of curve chart.This ratio is along with the ratio inverse variation of thickness with the thickness of final oxide skin(coating) of bond thickness layer.
According to the thickness of bonding oxide skin(coating) and the ratio of the thickness of final oxide skin(coating), it is about 20% that the boundary between I district and the II district is positioned at, and the boundary between II district and the III district is positioned at about 55%.
Can be distributed in three parts as the defective behind the bonding of the function of the thickness ratio of oxide.In part I, final oxide skin(coating) mainly is made of the alms giver's oxide that is formed on the donor substrate; H
2The O molecule is diffused into the surface of final substrate easily and forms a large amount of major defects at final substrate and the intersection that is also referred to as between the final oxide skin(coating) of imbedding oxide skin(coating) in annealing process.
In part III, the thickness of bonding oxide skin(coating) is greater than the thickness of alms giver's oxide skin(coating), its as the effect that stops since for example the element in the ion implantation step introduce step and deterioration.Observe very high defective, the barrier properties of alms giver's oxide skin(coating) 4 is more far short of what is expected than bonding oxide skin(coating) 5, can allow too much H like this
2The O molecular diffusion is in donor substrate 2, and this can form many " bubbling " type defective in annealing process.
Under two kinds of shown situations of the part I of Fig. 3 and part III, final oxide skin(coating) is not enough to the barrier effect of the diffusion of water.
In part II, the distribution (relative thickness of bonding oxide skin(coating) is between 15% and 50% herein, and the relative thickness that is to say alms giver's oxide skin(coating) is between 95% and 50%) of the thickness of oxide skin(coating) to be assembled makes the barrier properties of alms giver's oxide skin(coating) 4 owing to higher relative thickness improves before the bonding.The thickness of the bonding oxide skin(coating) 5 among this part II is enough in final substrate 3 those sides H
2O diffuse to form effect can with stop stopping of comparing in that side of donor substrate is formed.
Therefore, the defective after the thickness comparison annealing and then the effect of insulator-insulator bonding had significant effects, particularly under the situation of oxide-oxide bonding, in assembling process, stop or at least restriction imbed the H that captures in the oxide skin(coating)
2The diffusion of O molecule.
Data among this figure are clear to be shown, oxide-oxide bonding (for example the thickness of oxide equates), and perhaps more specifically, the oxide-oxide bonding with oxide thickness ratio of optimization can solve and H
2The problem that the diffusion of O is relevant, the particularly formation of " bubbling " type defective.Therefore can form UTBOX type device according to this method of the present invention with acceptable defective, its defective is lower than by the structure that method obtained according to prior art, wherein forms and imbeds whole oxide sources of final oxide skin(coating) from alms giver's oxide skin(coating).Obtain under the condition of these experimental results being used to, the relative thickness of the alms giver's oxide between 60% and 85% has been determined favourable interval.
The relation curve of this figure makes for the given thickness e of final oxide 45
t, given material and given ion inject, and can find out optimum oxide relative thickness in the scope of the method according to this invention.Optimum herein is between alms giver's oxide 70% and 80% between, more specifically near 75% of alms giver's oxide.
Represented bonding oxide thickness/final oxide thickness in addition than under about 33% and about 53% the situation, the ratio of defects level that when before bonding, two oxide skin(coating)s for the treatment of bonding all being used plasma treatment, is obtained.As can be seen, for identical bonding oxide thickness/final oxide thickness ratio, plasma treatment causes very significantly deterioration to final structure, the defects count height near 100 times.
Shown effect of the present invention (Fig. 4) by the defect analysis that SOI or UTBOX type structure based on silicon and silicon dioxide are obtained, it has shown the associated methods by oxide-oxide bonding, particularly when oxide has identical thickness (curve B), can improve reliability, therefore compare and to develop thinner UTBOX structure with the use known method.If employed associated methods is the method according to this invention (curve C), be included in the interval interior asymmetric thickness of waiting to assemble oxide skin(coating) that distributes mentioned above, can also reduce the size of imbedding oxide skin(coating) so and/or obtain lower defective.
Especially, compare with known method, the effect that is obtained is for the thickness e of imbedding oxide skin(coating) less than 15nm
tBeing very important, is appreciable for the thickness of imbedding oxide less than 10nm.
Therefore, the final thickness of imbedding oxide is low more, and it is strong more that the method according to this invention and the method for prior art are compared the effect that is had.
Can further improve mentioned abovely,, for example have the SOI of the oxide skin(coating) of appointed thickness to obtain thickness for example less than the extremely thin premium insulation body layer of 10nm or 5nm according to technology of the present invention.
For this purpose, make the structure of the method according to this invention, insulator is an oxide skin(coating), and its thickness is for example less than 10nm or between 15nm and 20nm.
Carry out the part of this oxide then and decompose, be less than 10nm so that its thickness reaches final required value.
File " Internal dissolution of Buried Oxide in SOI wafers " from people such as O.Kononchuk, Solid State Phenomena, Vol.131-133, p.113-118,2008 or US2005/00118789, known a kind of decomposition technique.
For example, (in＜1ppm) the neutral atmosphere and handle this structure basically under the temperature between 1100 ℃ and 1200 ℃, the duration of processing is between a few minutes (for example 2 minutes, 5 minutes, 10 minutes, 20 minutes or 30 minutes) and several hours (for example 1 hour, 2 hours, 5 hours or 10 hours) at the low-down oxygen concentration that has that comprises argon for example and/or hydrogen reduction atmosphere.In this heat treatment process, imbed the oxygen that exists in the oxide skin(coating) and regulate the flow of vital energy everywhere in the atmosphere by the Film Fractionation of semi-conducting material.It is for example made by silicon, then Rong Xie oxide skin(coating) SiO
2Change the Si of high-quality into.
Under situation, oxide can be thinned to selected final thickness, for example 5nm according to the SOI that imbeds oxide with 20nm of one of them acquisition of technology of the present invention.
Advantageously, continue under this neutral atmosphere and low-down oxygen concentration under heat treatment, at least to the whole thickness of the oxide skin(coating) that forms on donor substrate one side all dissolved till.In fact this special processing can impel the bonding structure (with regard to defect concentration) that forms high evenness, high-quality, its have about several nanometers as thin as a wafer imbed oxide skin(coating).The bonded interface of imbedding in addition in the oxide skin(coating) disappears, and is dissolved from all oxides of alms giver's oxide skin(coating), can guarantee to imbed oxide skin(coating) and have high electric property.Remaining oxide skin(coating) is made of the oxide from the bonding oxide skin(coating).
Claims (13)
1. method that is used to make the UTBOX N-type semiconductor N structure of piling up, described method comprises:
A) upward form first electrical insulator layer (4) that is called as alms giver's oxide skin(coating) that diffuseing to form of water is stopped or can limit this diffusion in donor substrate (2),
B) in described donor substrate, introduce element afterwards at the described alms giver's oxide skin(coating) of formation (4), form reduction layer (21),
C) upward form second electrical insulator layer (5) that is called as the bonding oxide skin(coating) that diffuseing to form of water is stopped or can limit this diffusion at second substrate (3) that is called as final substrate, the strictness of described bonding oxide skin(coating) is thinner than described alms giver's oxide skin(coating) (4);
D) two substrates of bonding, described two substrates all do not pass through plasma treatment, two electrical insulator layer are contacted and form together and imbed the insulator layer (45) that being called as between two substrates imbed oxide skin(coating), described insulator layer makes in bonding process, the thickness of described alms giver's oxide skin(coating) equals the thickness of described bonding oxide skin(coating) at least
Described thickness (the e that imbeds oxide skin(coating)
t) less than 50nm.
2. method according to claim 1, described alms giver's oxide skin(coating) (4) are imbedded relative thickness strictness that oxide skin(coating) compares greater than the described thickness (e that imbeds oxide skin(coating) (45) with described in bonding process
t) 50% and be less than or equal to the described thickness (e that imbeds oxide skin(coating) (45)
t) 95%.
3. method according to claim 2, the relative thickness of described alms giver's oxide skin(coating) (4) in bonding process is between the described thickness (e that imbeds oxide skin(coating) (45)
t) 60% and 85% between.
4. method according to claim 3, the relative thickness of described alms giver's oxide skin(coating) (4) in bonding process is between the described thickness (e that imbeds oxide skin(coating) (45)
t) 70% and 80% between.
5. according to each described method in the claim 1 to 4, the described thickness (e that imbeds oxide skin(coating)
t) less than 20nm.
6. method according to claim 5, the described thickness (e that imbeds oxide skin(coating)
t) less than 15nm.
7. according to each described method in the claim 1 to 6, described donor substrate (2) is to be made by the semi-conducting material such as silicon.
8. according to each described method in the claim 1 to 7, described final substrate (3) is to be made by the semi-conducting material such as silicon.
9. according to each described method in the claim 1 to 8, be included in bonding afterwards according to the described donor substrate of following method attenuate (2): maximum temperature is 400 ℃ and comprises at least one place fracture of described donor substrate at described reduction layer (21).
10. according to each described method in the claim 1 to 9, if after bonding and exist attenuate after attenuate, apply temperature between 900 ℃ and 1200 ℃, the temperature rise slope is greater than the heat treatment of 10 ℃/s.
11. according to each described method in the claim 1 to 10, wherein by deposition or reaction or by form native oxide form insulator layer one of them is given its water diffusion barrier property or makes its densification that can limit this diffusion annealing before being included in bonding at least.
12., except introducing doped chemical and/or cleaning and/or densification annealing, between its formation and bonding, do not comprise the processing that can change insulator layer according to each described method in the claim 1 to 11.
13. according to each described method in the claim 1 to 12, further be included in after the bonding and/or any densification annealing after by under the temperature between 1100 ℃ and 1200 ℃ basically and handle attenuate to imbed the step of oxide skin(coating) in the atmosphere of oxide concentration less than 1ppm.
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| FR0857409A FR2938118B1 (en) | 2008-10-30 | 2008-10-30 | METHOD FOR MANUFACTURING A STACK OF THIN SEMICONDUCTOR LAYERS |
| FR0857409 | 2008-10-30 | ||
| PCT/EP2009/064307 WO2010049496A1 (en) | 2008-10-30 | 2009-10-29 | Method for producing a stack of semi-conductor thin films |
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| FR2977069B1 (en) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE USING TEMPORARY COLLAGE |
| FR2980916B1 (en) | 2011-10-03 | 2014-03-28 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A SILICON TYPE STRUCTURE ON INSULATION |
| FR2989516B1 (en) | 2012-04-11 | 2014-04-18 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A SEL STRUCTURE USING TWS ATR |
| FR2995447B1 (en) | 2012-09-07 | 2014-09-05 | Soitec Silicon On Insulator | METHOD FOR SEPARATING AT LEAST TWO SUBSTRATES ACCORDING TO A CHOSEN INTERFACE |
| FR2995445B1 (en) | 2012-09-07 | 2016-01-08 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING A STRUCTURE FOR SUBSEQUENT SEPARATION |
| WO2015119742A1 (en) * | 2014-02-07 | 2015-08-13 | Sunedison Semiconductor Limited | Methods for preparing layered semiconductor structures |
| CN117835790B (en) * | 2024-03-06 | 2024-06-04 | 四川科尔威光电科技有限公司 | Semiconductor refrigerator substrate metallization method and semiconductor refrigerator metallization substrate |
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| JP4407127B2 (en) | 2003-01-10 | 2010-02-03 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
| TW200428637A (en) * | 2003-01-23 | 2004-12-16 | Shinetsu Handotai Kk | SOI wafer and production method thereof |
| JP2004259970A (en) * | 2003-02-26 | 2004-09-16 | Shin Etsu Handotai Co Ltd | Soi wafer and method for manufacturing it |
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| US7560361B2 (en) * | 2004-08-12 | 2009-07-14 | International Business Machines Corporation | Method of forming gate stack for semiconductor electronic device |
| JP2007173694A (en) * | 2005-12-26 | 2007-07-05 | Canon Inc | Method for manufacturing semiconductor substrate |
| FR2896618B1 (en) * | 2006-01-23 | 2008-05-23 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A COMPOSITE SUBSTRATE |
| GB0612093D0 (en) * | 2006-06-19 | 2006-07-26 | Univ Belfast | IC Substrate and Method of Manufacture of IC Substrate |
| FR2903809B1 (en) * | 2006-07-13 | 2008-10-17 | Soitec Silicon On Insulator | THERMAL TREATMENT OF INTERFACE STABILIZATION E COLLAGE. |
| FR2905801B1 (en) * | 2006-09-12 | 2008-12-05 | Soitec Silicon On Insulator | METHOD FOR TRANSFERRING A HIGH TEMPERATURE LAYER |
| FR2911431B1 (en) * | 2007-01-16 | 2009-05-15 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING STRUCTURES WITH INSULATING LAYER OF CONTROLLED THICKNESS |
| FR2912259B1 (en) * | 2007-02-01 | 2009-06-05 | Soitec Silicon On Insulator | PROCESS FOR PRODUCING A SUBSTRATE OF THE "SILICON ON INSULATION" TYPE |
| JP5231460B2 (en) | 2007-03-19 | 2013-07-10 | ソワテク | Patterned thin SOI |
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| CN109844911A (en) * | 2016-10-13 | 2019-06-04 | 索泰克公司 | Method for dissolving buried oxide in Silicon Wafer on insulator |
| CN109844911B (en) * | 2016-10-13 | 2023-03-24 | 索泰克公司 | Method for dissolving buried oxide in silicon-on-insulator wafers |
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| FR2938118A1 (en) | 2010-05-07 |
| WO2010049496A1 (en) | 2010-05-06 |
| TWI463564B (en) | 2014-12-01 |
| US20110177673A1 (en) | 2011-07-21 |
| EP2345067B1 (en) | 2014-09-17 |
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| JP2012507167A (en) | 2012-03-22 |
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| FR2938118B1 (en) | 2011-04-22 |
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Free format text: CORRECT: APPLICANT; FROM: S.O.J. TEC SILICON ON INSULATOR TECHNOLOGIES TO: SOITEC SILICON ON INSULATOR |
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Application publication date: 20110914 |