CN102227007A - Method for screening LEDs (light-emitting diodes) - Google Patents
Method for screening LEDs (light-emitting diodes) Download PDFInfo
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- CN102227007A CN102227007A CN 201110128147 CN201110128147A CN102227007A CN 102227007 A CN102227007 A CN 102227007A CN 201110128147 CN201110128147 CN 201110128147 CN 201110128147 A CN201110128147 A CN 201110128147A CN 102227007 A CN102227007 A CN 102227007A
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- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012216 screening Methods 0.000 title claims abstract description 29
- 238000009826 distribution Methods 0.000 claims description 18
- 238000002360 preparation method Methods 0.000 claims description 15
- 238000005520 cutting process Methods 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000004806 packaging method and process Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 6
- 238000005538 encapsulation Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000227 grinding Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
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Abstract
The invention discloses a method for screening LEDs (light-emitting diodes). In the method, products which are under a standard parameter value are eliminated; and products which comply with the standards are not classified and enter into a packaging link directly, thus reducing the manufacturing cost and improving the yield.
Description
Technical field
The present invention relates to semiconductor lighting device technical field, be specifically related to the screening technique of a kind of light-emitting diode (LED).
Background technology
Semiconductor light-emitting-diode abbreviates LED as.Diode by the compound of gallium (Ga) and arsenic (AS), phosphorus (P) is made can give off visible light when electronics and hole-recombination, thereby can be used for making light-emitting diode.Characteristics such as light-emitting diode (LED) is low in energy consumption with it as light source, life-span length, reliability height, many fields have in daily life obtained general approval, are used widely in electronic product, for example display backlight etc.
With based on semiconductor material with wide forbidden band nitrogenize sow (GaN) and indium nitrogenize to sow the light-emitting diode of (InGaN) be that the short-wave long light-emitting diodes such as near ultraviolet ray, blue-green and blueness of representative were used widely for the later stage in nineteen ninety, on basic research and commercial the application, obtained very much progress.The structure of the GaN based light-emitting diode of widespread usage as shown in Figure 1 at present, comprise Sapphire Substrate 10, n type GaN layer 201 and p type GaN layer 209, and the luminescence unit formed of the AlGaN layer 203 of the AlGaN layers 207 that mix by the p type in the middle of both, InGaN luminescent layer 205 (comprising single quantum hydrazine or the sub-hydrazine of volume) and the doping of n types, comprise electrically conducting transparent contact (TCO) layer 211 in addition, p type electrode 213 and n type electrode 215.
The manufacturing process of GaN based light-emitting diode mainly adopts semiconductor fabrication process, it at first is the manufacturing (MOCVD) of epitaxial wafer (epi-wafer), enter the die terminals operation then, as photoetching, deposit, operations such as etching, wafer grinding, hemisection, point survey, deep, visual inspection, encapsulation are finished manufacturing.Usually LED in process of production will be through screening and classification, with the requirement of satisfying technical indicator and client's instructions for use, each chip is tested, and qualified chip screens.The standard of screening and classification is different as required, normally classify according to wavelength and light intensity, therefore at most sort merges can be greater than more than more than 100, so greatly reduced production efficiency, test is got up and is bothered very much, needs the testing equipment (tester) and the sorting equipment (sorter) of many band probes.For example, one month 20,000 2 " the LED wafer is tested each chip, needs testing equipment (tester) and sorting equipment (sorter) more than 50, and manufacturing cost increases greatly.
Summary of the invention
The invention provides a kind of screening technique of light-emitting diode, the product that will be lower than a certain standard parameter value is removed, and standard compliant product does not add classification, directly enters the encapsulation link, thereby reduces manufacturing cost, improves yield.
The screening technique of a kind of light-emitting diode provided by the invention comprises: after epitaxial wafer preparation and preparation p-n junction, each brilliant unit with p-n junction is met the screening of normal distribution.
Optionally, the described screening that meets normal distribution is to make the brilliant unit that filters out meet requirement in the special parameter scope.
Optionally, described method will be removed in the extraneous brilliant unit of special parameter.
Optionally, described special parameter comprises luminous intensity.
The screening technique of a kind of light-emitting diode provided by the invention comprises: after epitaxial wafer preparation, preparation p-n junction, formation diode electrode, hemisection, each chip is met the screening of normal distribution in the process of a survey.
Optionally, the described screening that meets normal distribution makes the chip that filters out meet requirement in the special parameter scope.
Optionally, described method will be removed at the extraneous chip of special parameter.
Optionally, described special parameter comprises photoelectric characteristic, as luminous intensity.
The screening technique of a kind of light-emitting diode provided by the invention comprises: behind epitaxial wafer preparation, preparation p-n junction, and/or after forming diode electrode, cutting, some survey, each chip is met the screening of normal distribution.
Optionally, the described screening that meets normal distribution makes the chip that filters out meet requirement in the special parameter scope, will remove at the extraneous chip of special parameter, and described special parameter is a luminous intensity.
Description of drawings
By the more specifically explanation of the preferred embodiments of the present invention shown in the accompanying drawing, above-mentioned and other purpose, feature and advantage of the present invention will be more clear.Reference numeral identical in whole accompanying drawings is indicated identical part.Painstakingly do not draw accompanying drawing in proportion, focus on illustrating purport of the present invention.
Fig. 1 is the structural representation of GaN based light-emitting diode;
Fig. 2 is the inventive method criteria for classification curve chart;
Fig. 3 is the inventive method schematic flow sheet.
Described diagrammatic sketch is illustrative, and nonrestrictive, can not excessively limit protection scope of the present invention at this.
Embodiment
For above-mentioned purpose of the present invention, feature and advantage can be become apparent more, the specific embodiment of the present invention is described in detail below in conjunction with accompanying drawing.A lot of details have been set forth in the following description so that fully understand the present invention.But the present invention can implement much to be different from alternate manner described here, and those skilled in the art can do similar popularization under the situation of intension of the present invention.Therefore the present invention is not subjected to the restriction of following public specific embodiment.
Fig. 2 is the inventive method criteria for classification curve chart.As shown in Figure 2, normal distribution curve among the figure or Gaussian curve are represented the curve of light distribution of LED product.In the product of each batch, because the difference of process consistency, the photoelectric characteristic of up to ten thousand led chips on wafer is incomplete same.For example luminous intensity (abbreviation light intensity) I can be different, and wavelength X is difference to some extent also.Traditional LED classification is to classify according to wavelength and the light intensity of LED, in the method for the present invention, wavelength is not the factor of considering, and be to use the removal method, the LED that is lower than a certain luminous intensity is removed, remaining does not then add classification at the product that satisfies light intensity requirement, enters subsequent processing or enters encapsulation (packaging) operation.For example, the whole piece curve is represented all LED products of certain batch, and dash area representative in the left side is lower than a certain light intensity I
1The LED product, this part product is removed, remaining light intensity is at I
1～I
2And light intensity is greater than I
2The LED product do not classify, directly enter subsequent processing or encapsulation.In the same way, method of the present invention can be applied to each test link of LED production process, and the product that will be lower than a certain test index parameter is removed, and the product that satisfies between a certain index parameter scope is stayed, and enters subsequent processing.
Fig. 3 is the inventive method schematic flow sheet.As shown in the figure, in the present embodiment, method of the present invention meets the screening of normal distribution to each brilliant unit with p-n junction after epitaxial wafer preparation and preparation p-n junction.The described screening that meets normal distribution is to make the brilliant unit that filters out meet requirement in the special parameter scope, will remove at the extraneous chip unit of special parameter.This special parameter can be the luminous intensity I by measuring.
After the epitaxial wafer preparation forms p-n junction, can utilize above-mentioned removal method to classify.Utilizing grinding, deposition, mask and photoetching process etc. to form the positive and negative electrode of diodes, after cutting, expanding sheet, 100% survey, recording light electrical characteristics, each chip is being met the screening of normal distribution.The screening that meets normal distribution makes the chip that filters out meet requirement in the special parameter scope, will remove at the extraneous chip of special parameter.Described special parameter comprises photoelectric characteristic, as luminous intensity I.For example, be lower than a certain light intensity I
1The LED product, this part product is removed, remaining light intensity is at I
1～I
2And light intensity is greater than I
2The LED product do not classify, directly enter subsequent processing or encapsulation.In the testing process after cutting entirely, estimate, remove defective products.
The above only is preferred embodiment of the present invention, is not the present invention is done any pro forma restriction.Any those of ordinary skill in the art are not breaking away under the technical solution of the present invention scope situation, all can utilize the technology contents of above-mentioned announcement that technical solution of the present invention is made many possible changes and modification, or be revised as the equivalent embodiment of equivalent variations.Therefore, every content that does not break away from technical solution of the present invention, all still belongs in the protection range of technical solution of the present invention any simple modification, equivalent variations and modification that above embodiment did according to technical spirit of the present invention.
Claims (10)
1. the screening technique of a light-emitting diode comprises: after epitaxial wafer preparation and preparation p-n junction, each brilliant unit with p-n junction is met the screening of normal distribution.
2. method according to claim 1 is characterized in that: the described screening that meets normal distribution is to make the brilliant unit that filters out meet requirement in the special parameter scope.
3. method according to claim 2 is characterized in that: described method will be removed in the extraneous brilliant unit of special parameter.
4. method according to claim 2 is characterized in that: described special parameter comprises luminous intensity.
5. the screening technique of a light-emitting diode comprises: after epitaxial wafer preparation, preparation p-n junction, formation diode electrode, hemisection, each chip is met the screening of normal distribution in the process of a survey.
6. method according to claim 5 is characterized in that: the described screening that meets normal distribution makes the chip that filters out meet requirement in the special parameter scope.
7. method according to claim 6 is characterized in that: described method will be removed at the extraneous chip of special parameter.
8. method according to claim 6 is characterized in that: described special parameter comprises photoelectric characteristic, as luminous intensity.
9. the screening technique of a light-emitting diode comprises: behind epitaxial wafer preparation, preparation p-n junction, and/or after forming diode electrode, cutting, some survey, each chip is met the screening of normal distribution.
10. method according to claim 9 is characterized in that: the described screening that meets normal distribution makes the chip that filters out meet requirement in the special parameter scope, will remove at the extraneous chip of special parameter, and described special parameter is a luminous intensity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110128147 CN102227007A (en) | 2011-05-18 | 2011-05-18 | Method for screening LEDs (light-emitting diodes) |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201110128147 CN102227007A (en) | 2011-05-18 | 2011-05-18 | Method for screening LEDs (light-emitting diodes) |
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| CN102227007A true CN102227007A (en) | 2011-10-26 |
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| CN 201110128147 Pending CN102227007A (en) | 2011-05-18 | 2011-05-18 | Method for screening LEDs (light-emitting diodes) |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409394A (en) * | 2014-11-18 | 2015-03-11 | 湘能华磊光电股份有限公司 | Method and system for improving separation efficiency of LED chips |
| CN109382333A (en) * | 2018-11-05 | 2019-02-26 | 厦门乾照光电股份有限公司 | A kind of chip select method of LED epitaxial wafer |
| CN112775030A (en) * | 2020-12-02 | 2021-05-11 | 华灿光电(苏州）有限公司 | Light emitting diode chip sorting method |
| CN115921324A (en) * | 2022-12-29 | 2023-04-07 | 桑植县老区发展集团有限公司 | Zong leaves sorting method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
| CN101339092A (en) * | 2008-08-13 | 2009-01-07 | 重庆大学 | Non-contact detection method and detection device for LED chip/wafer/epitaxial wafer |
| US20090216356A1 (en) * | 2008-02-26 | 2009-08-27 | Epistar Corporation | Customized manufacturing method for an optoelectrical device |
| CN101677120A (en) * | 2008-09-16 | 2010-03-24 | 长裕欣业股份有限公司 | Method for manufacturing light emitting diode |
-
2011
- 2011-05-18 CN CN 201110128147 patent/CN102227007A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4927778A (en) * | 1988-08-05 | 1990-05-22 | Eastman Kodak Company | Method of improving yield of LED arrays |
| US20090216356A1 (en) * | 2008-02-26 | 2009-08-27 | Epistar Corporation | Customized manufacturing method for an optoelectrical device |
| CN101339092A (en) * | 2008-08-13 | 2009-01-07 | 重庆大学 | Non-contact detection method and detection device for LED chip/wafer/epitaxial wafer |
| CN101677120A (en) * | 2008-09-16 | 2010-03-24 | 长裕欣业股份有限公司 | Method for manufacturing light emitting diode |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104409394A (en) * | 2014-11-18 | 2015-03-11 | 湘能华磊光电股份有限公司 | Method and system for improving separation efficiency of LED chips |
| CN104409394B (en) * | 2014-11-18 | 2017-01-25 | 湘能华磊光电股份有限公司 | Method and system for improving separation efficiency of LED chips |
| CN109382333A (en) * | 2018-11-05 | 2019-02-26 | 厦门乾照光电股份有限公司 | A kind of chip select method of LED epitaxial wafer |
| CN112775030A (en) * | 2020-12-02 | 2021-05-11 | 华灿光电(苏州）有限公司 | Light emitting diode chip sorting method |
| CN112775030B (en) * | 2020-12-02 | 2022-06-17 | 华灿光电(苏州）有限公司 | Light emitting diode chip sorting method |
| CN115921324A (en) * | 2022-12-29 | 2023-04-07 | 桑植县老区发展集团有限公司 | Zong leaves sorting method |
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Application publication date: 20111026 |