CN102222673A - Novel SOI (silicon on insulator) material and preparation method thereof - Google Patents
Novel SOI (silicon on insulator) material and preparation method thereof Download PDFInfo
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- CN102222673A CN102222673A CN2011101861038A CN201110186103A CN102222673A CN 102222673 A CN102222673 A CN 102222673A CN 2011101861038 A CN2011101861038 A CN 2011101861038A CN 201110186103 A CN201110186103 A CN 201110186103A CN 102222673 A CN102222673 A CN 102222673A
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- insulating barrier
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- soi
- silicon
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- 239000000463 material Substances 0.000 title claims abstract description 65
- 238000002360 preparation method Methods 0.000 title claims abstract description 27
- 229910052710 silicon Inorganic materials 0.000 title abstract description 22
- 239000010703 silicon Substances 0.000 title abstract description 22
- 239000012212 insulator Substances 0.000 title abstract description 4
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004065 semiconductor Substances 0.000 claims abstract description 31
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 11
- 229910000420 cerium oxide Inorganic materials 0.000 claims abstract description 4
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical group [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims abstract description 4
- 230000004888 barrier function Effects 0.000 claims description 76
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical group O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 28
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 28
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 13
- 239000013078 crystal Substances 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 238000001704 evaporation Methods 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 229910000077 silane Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 5
- 238000010884 ion-beam technique Methods 0.000 claims description 4
- 239000000376 reactant Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 abstract description 8
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000009413 insulation Methods 0.000 abstract 4
- 238000005516 engineering process Methods 0.000 description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 238000000137 annealing Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005459 micromachining Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- -1 oxonium ion Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention relates to a novel SOI (silicon on insulator) material which comprises a semiconductor substrate, a first insulation layer and a second insulation layer, wherein the material of the first insulation layer is cerium oxide; and the material of the second insulation layer is monocrystalline silicon. The invention also relates to a preparation method of the SOI material. The novel SIO material provided by the invention has the advantages of good uniformity, stable chemical properties, and the preparation process of the SOI material is simple, and is easy to control.
Description
Technical field
The present invention relates to a kind of integrated circuit device structure and preparation method thereof, relate in particular to a kind of New type of S OI material and preparation method thereof.
Background technology
Silicon on the dielectric substrate (SOI) material is indispensable a kind of important semi-conducting material in modern semiconductors integrated circuit technique and the microelectronic industry.In the prior art, SOI (Silicon-On-Insulator, the silicon on the dielectric substrate) is to have introduced one deck buried oxide between top layer silicon and body silicon.The refractive index of top layer silicon and buried oxide differs greatly, and top layer silicon can be used as the conducting shell of light wave, and buried oxide can be used as covering.Because of on insulator, forming semiconductive thin film, the SOI material had body silicon incomparable advantage: can realize the dielectric isolation of components and parts in the integrated circuit, thoroughly eliminate the parasitic latch-up in the body silicon CMOS circuit; The integrated circuit that adopts this material to make has also that parasitic capacitance is little, integration density is high, speed is fast, technology is simple, short-channel effect is little and is specially adapted to advantage such as low-voltage and low-power dissipation circuit, therefore we can say that SOI might become the low pressure of deep-submicron, the mainstream technology of low power consumption integrated circuit.In addition, the SOI material also is used to make mems optical switch, as utilizes the body micromachining technology.
At present, international mainstream SOI material technology mainly comprises: annotate the oxygen high annealing and form SOI (SIMOX); Wafer bonding SOI; Annotate hydrogen smart-cut SOI.The technology of comparative maturity is to annotate the oxygen high annealing to form SOI (SIMOX), SIMOX is under hot conditions, the high dose oxonium ion is injected into forms separator in the monocrystalline silicon, under the superhigh temperature annealing conditions, form the novel semiconductor material of top layer silicon, buried oxide, body silicon three-decker.Can prepare the very thick SOI material of top layer silicon with the SIMOX method, top layer silicon thickness can be controlled on request; But uniformity is difficult to control when the top layer silicon attenuate, so the evenness at interface is difficult to guarantee; These traditional manufacture crafts are because the restriction of annealing conditions simultaneously, buried oxide and top layer silicon interface evenness are relatively poor in the SOI material of preparation, the defect concentration of top layer silicon is bigger, and ion implantation technology is loaded down with trivial details relatively, the equipment requirements height, limited the SOI material so to a certain extent at cmos device, the extensive use in the circuit.
Summary of the invention
The technical problem to be solved in the present invention is, a kind of good uniformity, SOI material that chemical property is stable are provided, and the preparation method that technology at this SOI material is simple, be easy to control is provided.
For addressing the above problem, the invention provides a kind of New type of S OI material, it is characterized in that, comprise semi-conductive substrate, be deposited on first insulating barrier on the described Semiconductor substrate and be deposited on second insulating barrier on described first insulating barrier, the material of wherein said first insulating barrier is a ceria, and the material of described second insulating barrier is a monocrystalline silicon.
Further, described Semiconductor substrate is＜100〉or＜110〉crystal orientation monocrystalline substrate, described Semiconductor substrate is N type or P type.
Further, described first insulating barrier adopts the method for evaporation to form.
Further, described second insulating barrier adopts chemical vapour deposition technique to form, and reactant comprises silane and hydrogen.
Further, the crystal habit of described second insulating barrier is a monocrystalline.
Above-mentioned New type of S OI preparation methods may further comprise the steps:
Semi-conductive substrate is provided, and cleans described Semiconductor substrate;
Utilize the method for evaporation on described Semiconductor substrate, to deposit described first insulating barrier of formation, and clean described first insulating barrier;
Deposition forms second insulating barrier on described first insulating barrier, and the material of wherein said first insulating barrier is a ceria, and the material of described second insulating barrier is a monocrystalline silicon.
Further, described Semiconductor substrate is＜100〉or＜110〉crystal orientation monocrystalline substrate, described Semiconductor substrate is N type or P type.
Further, the formation of described first insulating barrier may further comprise the steps: with the cold-rolled sintered formation target of cerium oxide powder; Utilize ion beam strengthen equipment with the target evaporation in described Semiconductor substrate.
Further, described second insulating barrier adopts chemical vapour deposition technique to form, and reactant comprises silane and hydrogen.
Further, the crystal habit of described second insulating barrier is a monocrystalline.
In sum, New type of S OI material of the present invention, comprise Semiconductor substrate, first insulating barrier and second insulating barrier, the material of wherein said first insulating barrier is a ceria, the material of second insulating barrier is a monocrystalline silicon, compared with prior art: ceria material lattice constant and silicon that first insulating barrier adopts are close, and is good with the first interfacial dielectric layer evenness; The ceria chemical property is stable, and the SOI stability of material of formation is good; Ceria (CeO
2) thermal conductivity than silicon dioxide (SiO
2) height, further improved the thermal diffusivity of SOI.Thereby adopt that ceria is good as the SOI material homogeneity that first insulating barrier forms, chemical property stable, and form the preparation technology of this SOI material simple, be easy to control.
The ceria of first insulating barrier of New type of S OI material of the present invention adopts vapour deposition method to form, the monocrystalline silicon of described second insulating barrier adopts chemical vapour deposition technique to form, thereby ion implantation technology has not only been avoided in the preparation of this New type of S OI material, can simplify soi wafer preparation technology, obtain high-quality soi wafer, and uniformity can be well controlled, and can obtain stable capacitor element, satisfies different users's requirement.Simultaneously, this is a well selection for the heat dissipation problem that solves the SOI material.
Description of drawings
Fig. 1 is the brief configuration schematic diagram among the embodiment of New type of S OI material of the present invention.
Fig. 2 is the concise and to the point schematic flow sheet among the embodiment of New type of S OI material preparation method of the present invention.
Embodiment
For making content of the present invention clear more understandable,, content of the present invention is described further below in conjunction with Figure of description.Certainly the present invention is not limited to this specific embodiment, and the known general replacement of those skilled in the art also is encompassed in protection scope of the present invention.
Secondly, the present invention utilizes schematic diagram to carry out detailed statement, and when example of the present invention was described in detail in detail, for convenience of explanation, schematic diagram did not amplify according to general ratio is local, should be with this as limitation of the invention.
Core concept of the present invention is: by a kind of SOI material is provided, this material comprises and once comprises Semiconductor substrate, first insulating barrier and second insulating barrier from the bottom to top, the material of wherein said first insulating barrier is a ceria, compared with prior art, ceria lattice constant and silicon are close, and chemical property is stable, and the preparation technology of ceria is simple, and uniformity can be well controlled; The material of second insulating barrier is a monocrystalline silicon.The soi structure of this method preparation has not only been avoided ion implantation technology, can simplify soi wafer preparation technology, obtains high-quality soi wafer, and can obtain stable capacitor element, satisfies different users's requirement.
Fig. 1 is the brief configuration schematic diagram among the embodiment of New type of S OI material of the present invention.As shown in Figure 1, described New type of S OI material comprises semi-conductive substrate 1, be deposited on first insulating barrier 2 on the described Semiconductor substrate 1 and be deposited on second insulating barrier 3 on described first insulating barrier 2, the material of wherein said first insulating barrier 2 is a ceria, and the material of described second insulating barrier 3 is a monocrystalline silicon.Wherein, described Semiconductor substrate 1 is＜100〉or＜110〉crystal orientation monocrystalline substrate, described Semiconductor substrate 1 can be N type or P type.The crystal habit of described first insulating barrier 2 is a monocrystalline.Ceria (CeO
2) having a cube calcium fluoride structure, lattice constant is 5.411 dusts, very near lattice constant 5.431 dusts of silicon, ceria (CeO simultaneously
2) the solid matter face is (111) face, form solid matter face structure energy needed less than forming other structure energy needed, so the contact interface evenness of first insulating barrier 2 and second insulating barrier 3 (ceria and silicon) is good, and the chemical property of ceria is very stable, be easy to control, the thermal conductivity of ceria is higher than silicon dioxide in addition, thereby has improved the heat-sinking capability of SOI.
Fig. 2 is the concise and to the point schematic flow sheet among the embodiment of New type of S OI material preparation method of the present invention.Please in conjunction with Fig. 1 and Fig. 2, above-mentioned New type of S OI preparation methods may further comprise the steps:
S01: semi-conductive substrate 1 is provided, and cleans described Semiconductor substrate 1; Adopt the described Semiconductor substrate 1 of standard technology cleaning, improve the evenness at the interface of the Semiconductor substrate 1 and first insulating barrier 2, and then improve the SOI material property.
S02: utilize the method for evaporation to deposit described first insulating barrier 2 on described Semiconductor substrate 1, and clean described first insulating barrier 2, wherein said first insulating barrier, 2 materials are ceria.Adopt standard technology cleaning first insulating barrier 2, improve the interface evenness between first insulating barrier 2 and second insulating barrier 3, and then improve the SOI material property.The formation of described first insulating barrier 2 may further comprise the steps: with the cold-rolled sintered formation target of cerium oxide powder; Strengthen equipment by ion beam, under high vacuum environment, evaporate target, deposit to and form CeO on the insulating barrier by ion beam
2Second insulating barrier 3.In this specific embodiment, depositing temperature is 400 ℃～500 ℃, and deposition rate is 3nm/min～5nm/min, the ceria (CeO of formation
2) layer thickness be 1900 dusts～2100 dusts.Certainly, the invention is not restricted to above-mentioned thickness.Preparation technology is simpler for ceria (CeO2), thereby even performance better controlled.
S03: deposition forms described second insulating barrier 3 on described first insulating barrier 2; Second insulating barrier 3 is generated by chemical vapor deposition method, can adopt silane (SiH
4) and hydrogen (H
2) deposition formation.In preferred embodiment, process conditions are: reaction temperature is 1000 ℃～1100 ℃, and reacting gas comprises silane (SiH4) and hydrogen (H2), and is wherein preferable, and the thickness of first insulating barrier 3 of formation is 3 microns～5 microns.Above embodiment only is illustrative rather than definitive thereof technical scheme of the present invention, the thickness of the Semiconductor substrate that forms, first insulating barrier, second insulating barrier requires to change according to actual process, the any modification or the local modification that do not break away from spirit and scope of the invention all should be encompassed in the middle of the claim scope of the present invention.
In sum, SOI material of the present invention comprises Semiconductor substrate, first insulating barrier and second insulating barrier, and the material of wherein said first insulating barrier is a ceria, and the material of second insulating barrier is a monocrystalline silicon; Compared with prior art: ceria material lattice constant and silicon that first insulating barrier adopts are close, and is good with the second interfacial dielectric layer evenness; The ceria chemical property is stable, and the SOI stability of material of formation is good; Ceria adopts vapour deposition method to form, and preparation technology is simple, and uniformity can be well controlled; The thermal conductivity of ceria (CeO2) has further improved the thermal diffusivity of SOI than silicon dioxide (SiO2) height.Thereby adopt that ceria is good as the SOI material homogeneity that first insulating barrier forms, chemical property stable, and form the preparation technology of this SOI material simple, be easy to control.The soi structure of method for preparing has not only been avoided ion implantation technology, can simplify soi wafer preparation technology, obtains high-quality soi wafer, and can obtain stable capacitor element, to satisfy different users's requirement.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limit the present invention; have in the technical field under any and know the knowledgeable usually; without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is as the criterion when looking claims person of defining.
Claims (10)
1. New type of S OI material, it is characterized in that, comprise semi-conductive substrate, be deposited on first insulating barrier on the described Semiconductor substrate and be deposited on second insulating barrier on described first insulating barrier, the material of wherein said first insulating barrier is a ceria, and the material of described second insulating barrier is a monocrystalline silicon.
2. New type of S OI material as claimed in claim 1 is characterized in that, described Semiconductor substrate is＜100〉or＜110〉crystal orientation monocrystalline substrate, described Semiconductor substrate is N type or P type.
3. New type of S OI material as claimed in claim 1 is characterized in that, described first insulating barrier adopts the method for evaporation to form.
4. New type of S OI material as claimed in claim 1 is characterized in that, described second insulating barrier adopts chemical vapour deposition technique to form, and reactant comprises silane and hydrogen.
5. New type of S OI material as claimed in claim 1 is characterized in that, the crystal habit of described second insulating barrier is a monocrystalline.
6. New type of S OI preparation methods as claimed in claim 1 is characterized in that, may further comprise the steps:
Semi-conductive substrate is provided, and cleans described Semiconductor substrate;
Utilize the method for evaporation on described Semiconductor substrate, to deposit described first insulating barrier of formation, and clean described first insulating barrier;
Deposition forms second insulating barrier on described first insulating barrier, and the material of wherein said first insulating barrier is a ceria, and the material of described second insulating barrier is a monocrystalline silicon.
7. New type of S OI preparation methods as claimed in claim 6 is characterized in that, described Semiconductor substrate is＜100〉or＜110〉crystal orientation monocrystalline substrate, described Semiconductor substrate is N type or P type.
8. New type of S OI preparation methods as claimed in claim 6 is characterized in that, the formation of described first insulating barrier may further comprise the steps: with the cold-rolled sintered formation target of cerium oxide powder; Utilize ion beam strengthen equipment with the target evaporation in described Semiconductor substrate.
9. New type of S OI preparation methods as claimed in claim 6 is characterized in that, described second insulating barrier adopts chemical vapour deposition technique to form, and reactant comprises silane and hydrogen.
10. New type of S OI preparation methods as claimed in claim 6 is characterized in that, the crystal habit of described second insulating barrier is a monocrystalline.
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| Application Number | Priority Date | Filing Date | Title |
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| CN2011101861038A CN102222673A (en) | 2011-07-05 | 2011-07-05 | Novel SOI (silicon on insulator) material and preparation method thereof |
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| CN2011101861038A CN102222673A (en) | 2011-07-05 | 2011-07-05 | Novel SOI (silicon on insulator) material and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104106A (en) * | 2017-04-10 | 2017-08-29 | 武汉华星光电技术有限公司 | The preparation method and TFT substrate of TFT substrate |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030008520A1 (en) * | 2001-07-05 | 2003-01-09 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
| US20100003897A1 (en) * | 2008-07-03 | 2010-01-07 | Kim Sang-Kyun | Methods of polishing an object using slurry compositions |
-
2011
- 2011-07-05 CN CN2011101861038A patent/CN102222673A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030008520A1 (en) * | 2001-07-05 | 2003-01-09 | International Business Machines Corporation | Method of forming lattice-matched structure on silicon and structure formed thereby |
| US20100003897A1 (en) * | 2008-07-03 | 2010-01-07 | Kim Sang-Kyun | Methods of polishing an object using slurry compositions |
Non-Patent Citations (3)
| Title |
|---|
| MORSHED A H, LIU S X, LEONARD R, ET AL: "Epitaxial CeO2 on Silicon Substrates and the Potential of Si/CeO2/Si for SOI Structures", 《MRS PROCEEDINGS. CAMBRIDGE UNIVERSITY PRESS》 * |
| MORSHED A H, LIU S X, LEONARD R, ET AL: "Epitaxial CeO2 on Silicon Substrates and the Potential of Si/CeO2/Si for SOI Structures", 《MRS PROCEEDINGS. CAMBRIDGE UNIVERSITY PRESS》, vol. 474, 31 December 1997 (1997-12-31), pages 339 - 344 * |
| RONG-PING WANG, SHAO-HUA PAN，ET AL: "Fabrication and characteristics of CeO2 films on Si(100) substrates by pulsed laser deposition Original Research", 《JOURNAL OF CRYSTAL GROWTH》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107104106A (en) * | 2017-04-10 | 2017-08-29 | 武汉华星光电技术有限公司 | The preparation method and TFT substrate of TFT substrate |
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Inventor after: Zeng Shaohai Inventor after: Zuo Qingyun Inventor before: Zeng Shaohai Inventor before: Zuo Qingyun |
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Application publication date: 20111019 |