CN102222737B - LED (Light Emitting Diode) encapsulating body and encapsulating method thereof - Google Patents
LED (Light Emitting Diode) encapsulating body and encapsulating method thereof Download PDFInfo
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- CN102222737B CN102222737B CN2011101620898A CN201110162089A CN102222737B CN 102222737 B CN102222737 B CN 102222737B CN 2011101620898 A CN2011101620898 A CN 2011101620898A CN 201110162089 A CN201110162089 A CN 201110162089A CN 102222737 B CN102222737 B CN 102222737B
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- 239000010410 layer Substances 0.000 claims description 96
- 238000005538 encapsulation Methods 0.000 claims description 62
- 239000000843 powder Substances 0.000 claims description 39
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 36
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- 229910052802 copper Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 11
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
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Abstract
The invention relates to an LED (Light Emitting Diode) encapsulating body which comprises an LED chip, an electrode side-insulating layer, high heat transmission-dissipation layers and high heat transmission metal layers, wherein the LED chip is provided with an electrode side-surface and at least two electrodes arranged on the surface of the electrode side-surface; the electrode side-insulating layer is formed on the electrode side-surface of the LED chip and is provided with a plurality of through holes corresponding to the electrodes; the high heat transmission-dissipation layers are formed in the through holes of the electrode side-insulating layer; and the high heat transmission metal layers are formed on high-efficiency heat dissipation layers.
Description
The application is that application number is the dividing an application of Chinese patent application of 200810185991.X, and the applying date of this Chinese patent application is on December 18th, 2008, and denomination of invention is " LED encapsulation body and method for packing thereof ".
Technical field
The present invention relates to a kind of LED encapsulation body and method for packing thereof, more particularly, relate to a kind of heat dispersion is good and production cost reduces LED encapsulation body and method for packing thereof.
Background technology
Figure 19 shows that a kind of diagrammatic side view of existing LED encapsulation body.Figure 20 shows that the schematic diagram of the specification distribution of light-emitting diode chip for backlight unit after encapsulation that shows identical wavelength and same brightness.
Consult shown in Figure 19ly, described existing LED encapsulation body comprises a light-emitting diode chip for backlight unit 91 that is positioned on lead frame 90, and lens 92 that are formed on described lead frame 90 and can cover described light-emitting diode chip for backlight unit 91.
The electrode (not shown) of described light-emitting diode chip for backlight unit 91 is to be electrically connected to the corresponding electrode pin 900 of described lead frame 90 via wire 93.
It should be noted, be formed with phosphor powder layer 94 on the electrode side surface of described light-emitting diode chip for backlight unit 91.The formation of described phosphor powder layer 94 comprises the steps: liquid phosphor powder layer material is coated on the electrode side surface of described light-emitting diode chip for backlight unit 91; And make described liquid phosphor powder layer material harden to form described phosphor powder layer 94 with baking process.Yet the formation of present described phosphor powder layer 94 has following shortcoming:
1, in uneven thickness-liquid phosphor powder layer material will to all the winds flow before baking hardening, and therefore, the phosphor powder layer 94 that is formed on each light-emitting diode chip for backlight unit 91 is different on thickness.
2, area not identical-with the 1st in like manner, being formed on phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 also can be therefore on area and different.
3, shape not identical-with the 1st in like manner, therefore be formed on phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 in shape also can be and different.
4, relative position skew-with the 1st in like manner, be formed on that phosphor powder layer 94 on each light-emitting diode chip for backlight unit 91 is understood with the relative position of corresponding light-emitting diode chip for backlight unit 91 so and different.
Due to above shortcoming, will cause the light-emitting diode chip for backlight unit of identical wavelength originally and same brightness to become multiple color temperatures difference, LED encapsulation body that the brightness difference is different with wavelength after encapsulation, that is, and so-called defective products (side bins).Consult shown in Figure 20ly, the specification that produces because of the problems referred to above distributes as shown in the figure.It should be noted, the light-emitting diode chip for backlight unit that originally belongs to same specification (bin) can be divided into 128 specifications after encapsulation, yet, generally with the scope that is used only in about 60% of centre, therefore, be equivalent to 40% LED encapsulation body and can become defective products after encapsulation, therefore cause the production cost increase.
On the other hand, because the sectional area of wire 93 is too little, the heat that is therefore produced by described light-emitting diode chip for backlight unit 91 is difficult to conduct out via the electrode pin 900 of lead frame 90, and then affects the usefulness of LED encapsulation body.
Summary of the invention
The object of the present invention is to provide a kind of LED encapsulation body and method for packing thereof.
According to a feature of the present invention, a kind of LED encapsulation body is provided, it comprises: a light-emitting diode chip for backlight unit, it has an electrode side surface and at least two electrodes that are installed on described electrode side surface; An electrode side insulation layer, it is formed on the electrode side surface of described light-emitting diode chip for backlight unit and is formed with a plurality of through holes corresponding to described electrode; Be formed at the interior high heat transfer heat dissipating layer of each through hole of described electrode side insulation layer; And be formed at high heat transfer metal level on each high efficiency and heat radiation layer.
According to another characteristic of the invention, a kind of method for packing of LED encapsulation body is provided, it comprises the steps: to prepare a slice LED wafer, described LED wafer has a plurality of light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit has a main light-emitting area, and the main light-emitting area of described a plurality of light-emitting diode chip for backlight unit is equivalent to the main light-emitting area of described LED wafer; Form a light-emitting area insulating barrier on the main light-emitting area of described LED wafer; Form a plurality of through holes that each arrives the main light-emitting area of corresponding light-emitting diode chip for backlight unit on described light-emitting area insulating barrier; And form phosphor powder layer in described a plurality of through holes; Thus, the phosphor powder layer of all light-emitting diode chip for backlight unit all has same thickness, equal area and identical shaped, and the phosphor powder layer that is formed on the main light-emitting area of each light-emitting diode chip for backlight unit immobilizes with relative position between corresponding light-emitting diode chip for backlight unit.
according to another feature of the present invention, a kind of LED encapsulation body is provided, it comprises: the pair of electrodes pin, and light-emitting diode chip for backlight unit, described light-emitting diode chip for backlight unit has the first electrode side surface and the second electrode side surface, be provided with the first electrode on described the first electrode side surface, be provided with the second electrode on described the second electrode side surface, described the first electrode and described the second electrode have different conductivity-type, described light-emitting diode chip for backlight unit in the situation that the electrode of its first and second electrodes side surface the electrode pin is supported by this with the contact electrical contact of corresponding electrode pin, the electrode side surface of described light-emitting diode chip for backlight unit is coated with diamond film, therefore, it is inner that heat energy enough leaves described lens from the conduction of electrode pin effectively via described diamond film.
According to a feature more of the present invention, a kind of light emitting module is provided, it comprises: a luminescence component, described luminescence component comprises microscler printed circuit board (PCB), to cover crystal type, a plurality of LED encapsulation bodies is installed on described printed circuit board (PCB); And leaded light component, described leaded light component comprises a diffuser plate that is arranged on described printed circuit board (PCB), is formed with a plurality of accommodating accommodating depressed parts that are arranged on the LED encapsulation body of the correspondence on described printed circuit board (PCB) that are suitable at described diffuser plate on the surface of described printed circuit board (PCB).
Description of drawings
Figure 1 shows that the schematic sectional view of the LED encapsulation body of first preferred embodiment of the invention;
Fig. 2 is to Figure 3 shows that for the manufacture of the schematic sectional view in the method for the LED encapsulation body shown in Fig. 1;
Figure 4 shows that the schematic sectional view of the LED encapsulation body of second preferred embodiment of the invention;
Fig. 5 to 7 is depicted as for the manufacture of the schematic sectional view in the method for the LED encapsulation body shown in Fig. 4;
Fig. 8 and 9 is depicted as the schematic diagram of state that each interlayer hole exposes the main light-emitting area of two or more LED chips;
Figure 10 shows that the schematic sectional view of variation of the LED encapsulation body of the second preferred embodiment of the present invention;
Figure 11 shows that the schematic sectional view of variation of the LED encapsulation body of second preferred embodiment of the invention;
Figure 12 (A) and 12 (B) are depicted as the schematic diagram of the LED encapsulation body of third preferred embodiment of the invention;
Figure 13 (A) and 13 (B) are depicted as the schematic diagram of variation of the LED encapsulation body of third preferred embodiment of the invention;
Figure 14 to 16 is depicted as the schematic diagram of the backlight module that uses LED encapsulation body of the present invention;
Figure 17 shows that the schematic sectional view of variation of the LED encapsulation body of second preferred embodiment of the invention;
Figure 18 shows that the schematic diagram at the backlight module of the LED encapsulation body shown in Figure 17;
Figure 19 shows that the schematic diagram of existing LED encapsulation body;
Figure 20 shows that the schematic diagram of the specification distribution of light-emitting diode chip for backlight unit after encapsulation of identical wavelength and same brightness;
Shown in Figure 21 is the schematic diagram of the LED encapsulation body of four preferred embodiment of the invention; And
Shown in Figure 22 is the schematic sectional view of the variation of the second preferred embodiment of the present invention.
Embodiment
In the detailed description of the following preferred embodiment of the present invention, same or similar assembly is indicated by identical label, and their detailed description will be omitted.In addition, for clear announcement feature of the present invention, the assembly in accompanying drawing is not to describe by actual ratio.
Figure 1 shows that the schematic sectional view of the LED encapsulation body of first preferred embodiment of the invention, and Fig. 2 to 3 is depicted as the schematic sectional view that the method that is manufactured on the LED encapsulation body shown in Fig. 1 is shown in the flow chart mode.
As shown in Fig. 1 to 3, be formed with an electrode side insulation layer 2 on the electrode side surface W10 of a LED wafer W with a plurality of light-emitting diode chip for backlight unit 1.Described electrode side insulation layer 2 is formed with the through hole 20 of electrode 11 of the light-emitting diode chip for backlight unit 1 of the correspondence that exposes described LED wafer W.Be formed with successively high heat transfer heat dissipating layer 30 and a high heat transfer metal level 31 that is formed on described high heat transfer heat dissipating layer 30 that is formed on described electrode side surface 10 in each through hole 20.
In the present embodiment, described high heat transfer heat dissipating layer 30 is formed to the material of the coefficient of heat conduction of 700W/ (mK) by the 400W/ (mK) that has such as pyrolytic graphite and strong solution graphite, is perhaps formed to the material of the coefficient of heat conduction of 1200W/ (mK) by the 900W/ (mK) that has such as the diamond China ink.On the other hand, described high heat transfer metal level 31 can be formed by nickel dam and gold layer or aluminium lamination and copper layer, as shown in Figure 11.Perhaps, described metal level 31 can be formed by the copper layer.Perhaps, described metal level 31 can be formed by any suitable metal level or alloy-layer, such as Al, AlN
3, Cu, BN
3Deng.
Then, a plurality of each is formed on the main light-emitting area W12 relative with described electrode side surface W10 of LED wafer W along the groove 13 that the line of cut CL of correspondence extends.
Then, as shown in FIG. 3, phosphor powder layer 41 and protective layer 42 are formed on the surperficial W12 of described LED wafer W successively.
Then, as shown in Figure 1, after experience cutting processing procedure, obtain the LED encapsulation body of first embodiment of the invention.Because the side surface of described light-emitting diode chip for backlight unit 1 is also mostly covered by phosphor powder layer 41, the color that the advantage of described the present embodiment is more effectively to reduce the light that is sent by described LED encapsulation body changes because of the impact of sidelight.
Figure 4 shows that the schematic sectional view of the LED encapsulation body of second preferred embodiment of the invention, and Fig. 5 is to Figure 7 shows that the schematic sectional view that the method that is manufactured on the LED encapsulation body shown in Fig. 4 is shown in the flow chart mode.
Be noted that their detailed description will be omitted because the electrode side insulation layer 2 on the electrode side surface W10 of LED wafer W, high heat transfer heat dissipating layer 30 are identical with the first embodiment with the formation of high heat transfer metal level 31.
Consult Fig. 4 to shown in Figure 7, be formed with a light-emitting area side insulation layer 4 on the main light-emitting area W12 of described LED wafer W.Described light-emitting area side insulation layer 4 is formed with a plurality of perforation 40 of leading to the main light-emitting area 12 (W12) of corresponding light-emitting diode chip for backlight unit 1.Be formed with a phosphor powder layer 41 in each perforation 40.
Then, a protective clear layer 42 is formed on the surface of described insulating barrier 4 and phosphor powder layer 41.Then, as shown in Figure 4, after experience cutting processing procedure, obtain the LED encapsulation body of second embodiment of the invention.
In the above description, although each through hole 40 exposes the main light-emitting area 12 of a chip to the open air.Yet each through hole 40 also can expose two or more chip 1.That is, each through hole 40 also can expose as required 2 * 2,3 * 3,4 * 4,5 * 5 ... etc. chip 1, as shown in Fig. 8 and Fig. 9.
The LED encapsulation body of making by method of the present invention is because the phosphor powder layer 41 of each light-emitting diode chip for backlight unit has equal area A
1, A
2, A
3...., A
n(seeing Fig. 5) and the thickness D that equates
1, D
2, D
3... .., D
nSee (Fig. 7), therefore, fluorescent material is obtained identical colour temperature and same brightness after LED is blue-light excited, can not cause the defective products (side bins) that has after LED encapsulation more than 40% because of dot fluorescent powder.And the phosphor powder layer 41 that is formed on the light-emitting area 12 of each light-emitting diode chip for backlight unit 1 can not be offset with the relative position of corresponding light-emitting diode chip for backlight unit 1, shape also can with, so can effectively eliminate the shortcoming of existing LED encapsulation body.
Therefore in addition, the height of phosphor powder layer 41 of the present invention is controlled by the height of insulating barrier 4, can suitably control with the error range of the required height of reality.
Consult shown in Figure 10ly, also selectively form tin ball 32 on each metal level 31.
In this way, due to the high heat-conduction coefficient of described high heat transfer heat dissipating layer 30 and described high heat transfer metal level 31, the heat energy that is produced by described light-emitting diode chip for backlight unit 1 conducts enough quickly and effectively and leaves.
Figure 12 (A) and Figure 12 (B) are depicted as the diagrammatic side view of the LED encapsulation body of another embodiment of the present invention.
Consult shown in Figure 12 (A) and Figure 12 (B), described LED encapsulation body comprises pair of electrodes pin 51,52, the light-emitting diode chip for backlight unit 1 that is supported by described pair of electrodes pin 51,52, phosphor powder layer 6, reflector 7 and the lens 8 that coat described light-emitting diode chip for backlight unit 1.
Described light-emitting diode chip for backlight unit 1 has the first electrode side surface 13 and the second electrode side surface 14.Be provided with the first electrode 130 on described the first electrode side surface 13.Be provided with the second electrode 140 on described the second electrode side surface 14.Described the first electrode and described the second electrode have different conductivity-type.Described light-emitting diode chip for backlight unit 1 the electrode 130 of its first and second electrodes side surface 13 and 14 and 140 with situation that the contact of corresponding electrode pin 51,52 electrically contacts under supported by described pair of electrodes pin 51,52.The electrode side surface 13,14 of described light-emitting diode chip for backlight unit 1 is coated with diamond film 15.Therefore, heat energy is enough leaves described lens 8 inside from 51,52 conduction of electrode pin effectively via described diamond film.
Consult shown in Figure 13 (A) and Figure 13 (B), it illustrates the modification of the LED encapsulation body of Figure 12 (A).LED encapsulation body difference shown in this modification and Figure 12 (A) is in this modification, also is coated with layer of fluorescent powder layer 16 on diamond film 15, makes at the phosphor powder layer 6 shown in Figure 12 (A) to omit.
Figure 14 shows that the signal decomposed figure of light emitting module, and Figure 15 shows that the signal constitutional diagram of the light emitting module of Figure 14.
Consult shown in Figure 14ly, described light emitting module comprises a luminescence component and a leaded light component.Described luminescence component comprises microscler printed circuit board (PCB) 100.On described printed circuit board (PCB) 100, to cover crystal type, a plurality of LED encapsulation bodies 200 are installed.Be coated with phosphor powder layer 201 on the main light-emitting area of each LED encapsulation body 200.Be formed with in described printed circuit board (PCB) 100 a plurality of described printed circuit board (PCB) 100 vertically on the inverted T-shaped perforation 101 separated with equal intervals.
Described leaded light component comprises diffuser plate 300.Snap fit 302 at the perforation 101 of a plurality of accommodating depressed parts 301 that are suitable for the accommodating LED encapsulation body 200 that is arranged on the correspondence on described printed circuit board (PCB) 100 of being formed with on the surface of described printed circuit board (PCB) 100 of described diffuser plate 300 and a plurality of correspondences that are suitable for extending to described printed circuit board (PCB) 100.
As shown in Figure 15, when the snap fit 302 of described diffuser plate 300 is fastened on the perforation 101 of correspondence of described printed circuit board (PCB) 100 when interior, be arranged in the depressed part 301 of correspondence that LED encapsulation body 200 on described printed circuit board (PCB) 100 is contained in described diffuser plate 300, and spread out by described diffuser plate 300 by the light of these LED encapsulation bodies 200 emissions.
But it should be noted that coating phosphor powder layer 303 (seeing Figure 16) on the inner surface of each depressed part 301.Thus, can omit phosphor powder layer on LED encapsulation body 200.Perhaps, the phosphor powder layer on phosphor powder layer 303 and LED encapsulation body 200 can exist simultaneously, can improve thus LED encapsulation body 200 sidelights without the shortcoming of excitated fluorescent powder.
Consult now shown in Figure 17, different from the second embodiment, the LED encapsulation body of the present embodiment does not form the light-emitting area side insulation layer on the main light-emitting area 12 of light-emitting diode chip for backlight unit 1, described phosphor powder layer 41 is formed directly on the main light-emitting area 12 of described light-emitting diode chip for backlight unit 1.
Figure 18 shows that the schematic isometric of using at the backlight module of the LED encapsulation body shown in Figure 17.
As shown in Figure 18, described backlight module comprises printed circuit board (PCB) 100, a plurality of LED encapsulation body 200, reaches a plurality of lids 400 doped with fluorescent material.These LED encapsulation bodies 200 as shown in Figure 17 electrically are arranged on described printed circuit board (PCB) 100.Each lid 400 is formed with a horn-like perforation 401, and is arranged on described printed circuit board (PCB) 100, makes each LED encapsulation body 200 be positioned at the perforation 401 of corresponding lid 400 near the aperture of the tool smaller aperture due of described perforation 401.Thus, any blue ray that sends from described packaging body 200 sides can become white light after the fluorescent material with lid 400 excites, and therefore blue sidelight problem can further solve.
Consult shown in Figure 21ly, a LED chip 1 electrically is installed on matrix S.Described LED chip 1 has a first surface 10 that is formed with the first electrode 12, and a second surface 11 that is formed with the second electrode (not shown).Described LED chip 1 is arranged on the installation surface 20 of described matrix S via a conductor layer 3, makes the second electrode of described LED chip 1 be connected electrically to the electric terminal (not shown) of the correspondence on the installation surface 20 of described matrix S.
Described conductor layer 3 comprises that a copper layer 32, on the installation surface that is formed at described matrix S 20 is at 31 and weld layer 30 on described gold layer 31 of the gold layer on described copper layer 32.
Described copper layer 32 is connected to the installation surface 20 of described matrix S by method of laser welding (Laser Welding Method) or ultrasonic method (Ultrasonic Method).
Described gold layer 31 is connected to described copper layer 32 by method of laser welding.
Described solder layer 30 is connected to described gold layer 31 by the reflow method.
The first electrode 12 of described LED chip 1 is electrically connected to the conductive junction point 21 on the installation surface 20 of described matrix S.Each conductive junction point 21 comprises that a copper layer 212, on the installation surface that is formed on described matrix S 20 is at 211 and solder layer 210 on described gold layer 211 of the gold layer on described copper layer 212.
Consult shown in Figure 22ly, different from the first embodiment of the present invention, described height heat-conducting metal layer 31 comprises a copper layer 310 that is formed on the height heat dissipating layer 30 that is formed by thermal decomposition graphite.Described height heat dissipating layer 30 can form by sputtering method with described copper layer 310.The removal that it should be noted that the part of described height heat dissipating layer 30 and described height heat-conducting metal layer 31 can be reached by CMP (cmp) processing procedure.
Described metal level 31 also comprises one at the Au layer 311 on described copper layer 310 and the solder layer 312 on described Au layer 311.
Claims (9)
1. the method for packing of a LED encapsulation body is characterized in that comprising the following steps:
Prepare a slice LED wafer, described LED wafer has a plurality of light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit has a main light-emitting area, and the main light-emitting area of described a plurality of light-emitting diode chip for backlight unit is equivalent to the main light-emitting area of described LED wafer;
Form a light-emitting area insulating barrier on the main light-emitting area of described LED wafer;
Form a plurality of each and arrive the through hole of the main light-emitting area of corresponding light-emitting diode chip for backlight unit on described light-emitting area insulating barrier; And
Form phosphor powder layer in described a plurality of through holes;
Thus, the phosphor powder layer of all light-emitting diode chip for backlight unit all has same thickness, equal area and identical shaped, and the phosphor powder layer that is formed on the main light-emitting area of each light-emitting diode chip for backlight unit immobilizes with relative position between corresponding light-emitting diode chip for backlight unit.
2. method for packing as claimed in claim 1 characterized by further comprising following steps:
Form an electrode side insulation layer on the electrode side surface of described LED wafer;
Form the through hole of electrode of correspondence of the described LED wafer of a plurality of exposures in described electrode side insulation layer; And
Form successively one at the high heat transfer heat dissipating layer on described electrode side surface and the high heat transfer metal level on described high heat transfer heat dissipating layer in each through hole.
3. method for packing as claimed in claim 1, is characterized in that the thickness of phosphor powder layer is controlled by the height of insulating barrier.
4. method for packing as claimed in claim 1, is characterized in that each through hole exposes two or more chips.
5. method for packing as claimed in claim 1, is characterized in that being coated with any suitable high heat transfer material on the P of light-emitting diode chip for backlight unit layer or N layer.
6. method for packing as claimed in claim 5, is characterized in that described high heat transfer material is the material of diamond China ink, strong solution graphite etc.
7. the method for packing of a LED encapsulation body is characterized in that comprising the following steps:
Prepare a slice LED wafer, described LED wafer has a plurality of light-emitting diode chip for backlight unit, each light-emitting diode chip for backlight unit has a main light-emitting area, and the main light-emitting area of described a plurality of light-emitting diode chip for backlight unit is equivalent to the main light-emitting area of described LED wafer;
Form a phosphor powder layer on the main light-emitting area of described LED wafer; And
Form a protective layer on described phosphor powder layer.
8. method for packing as claimed in claim 7 characterized by further comprising following steps:
Form an electrode side insulation layer on the electrode side surface of described LED wafer;
Form the through hole of electrode of correspondence of the described LED wafer of a plurality of exposures in described electrode side insulation layer; And
Be formed with successively one at the high heat transfer heat dissipating layer on described electrode side surface and the high heat transfer metal level on described high heat transfer heat dissipating layer in each through hole.
9. method for packing as claimed in claim 7, is characterized in that before forming described phosphor powder layer, and is further comprising the steps of:
Form a plurality of grooves that each extends along line of cut on the main light-emitting area of described LED wafer.
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| CN2011101620898A CN102222737B (en) | 2008-12-18 | 2008-12-18 | LED (Light Emitting Diode) encapsulating body and encapsulating method thereof |
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| CN200810185991XA Division CN101752474B (en) | 2008-12-18 | 2008-12-18 | LED package |
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| CN102222737A CN102222737A (en) | 2011-10-19 |
| CN102222737B true CN102222737B (en) | 2013-06-05 |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008054670A1 (en) * | 2006-10-31 | 2008-05-08 | Cree, Inc. | Integrated heat spreaders for leds and related assemblies |
| CN101202273A (en) * | 2006-10-31 | 2008-06-18 | 日立电线株式会社 | LED components |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI294694B (en) * | 2005-06-14 | 2008-03-11 | Ind Tech Res Inst | Led wafer-level chip scale packaging |
| US20070126020A1 (en) * | 2005-12-03 | 2007-06-07 | Cheng Lin | High-power LED chip packaging structure and fabrication method thereof |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008054670A1 (en) * | 2006-10-31 | 2008-05-08 | Cree, Inc. | Integrated heat spreaders for leds and related assemblies |
| CN101202273A (en) * | 2006-10-31 | 2008-06-18 | 日立电线株式会社 | LED components |
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| CN102222737A (en) | 2011-10-19 |
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