CN102263116B - Photographic device with photo sensor and manufacturing method thereof - Google Patents

Abstract

An optical sensor (1) has: a photoelectric conversion device region (3) and a connection pad (4) located on the lower surface of a semiconductor substrate (2), and has: under the semiconductor substrate 2 via an insulating film (5, 7) and the wiring (9) connected to the connection pad (3), and the columnar electrode (12) as an electrode for external connection connected to the wiring (9). As a result, compared with the case where the photoelectric conversion device region (3) and the connection pad (4) connected to the photoelectric conversion device region (3) are formed on the upper surface of the semiconductor substrate (2), there is no need to form The through-electrode for connecting the connection pad (4) and the wiring (9) can reduce the number of steps, and can be less subject to constraints in the process of processing.

Description

Imaging device with optical sensor and manufacturing method thereof

technical field

The present invention relates to an imaging device having an optical sensor and a manufacturing method thereof.

Background technique

Japanese Unexamined Patent Application Publication No. 2010-56292 discloses a technique in which a glass plate having a lens on the lower surface is attached to an optical sensor via a frame-shaped spacer. In this case, the photosensor has a semiconductor substrate. A light receiving unit is provided at the center of the upper surface of the semiconductor substrate. Connection pads connected to the light receiving portion are provided on the peripheral portion of the upper surface of the semiconductor substrate.

Wiring is provided on the lower surface of the semiconductor substrate. For example, in the case of CMOS, wiring is necessary to take out a signal as a voltage. One end of the wiring is connected to the connection pad via a through-hole electrode provided in a through-hole located in a peripheral portion of the semiconductor substrate. An insulating film is provided on the lower surface of the semiconductor substrate except for lands of wirings, and the lands of wirings are exposed through openings provided in the insulating film. Solder balls are provided on the lower surface of the land of the wiring exposed through the opening of the insulating film.

In Japanese Patent Application Laid-Open No. 2010-56292, first, a semiconductor wafer thicker than the thickness of a semiconductor substrate of an imaging device as a finished product is prepared. In this case, the light receiving unit is provided at the center of the upper surface of the imaging device formation region of the semiconductor wafer, and the connection pads connected to the light receiving unit are provided around it.

Next, a member provided with a plurality of lenses on the lower surface of a glass plate having the same size as the semiconductor wafer is mounted on the semiconductor wafer through lattice-shaped spacers. Next, the lower surface side of the semiconductor wafer is ground to reduce the thickness of the semiconductor wafer. Next, through-holes are formed in the peripheral portion of the semiconductor wafer in the formation region of the imaging device. Next, on the lower surface of the semiconductor wafer including the through holes, wiring and through electrodes are formed by electrolytic plating.

Next, an insulating film having openings is formed on the lower surface side of the semiconductor wafer. Next, solder balls are formed on the lower surface of the land of the wiring exposed through the opening of the insulating film. Next, the semiconductor wafer, the grid-shaped spacer, and the glass plate having the same size as the semiconductor wafer are cut to obtain a plurality of imaging devices.

However, in the above-mentioned conventional method of manufacturing an imaging device, there is a problem that many steps are required to form a through-hole in the peripheral portion of the imaging device forming region of the semiconductor wafer, such as forming a resist film on the lower surface of the semiconductor wafer, resisting The etchant film forms openings, forms through-holes of the semiconductor wafer by etching using the resist film as a mask, lifts off the resist film, and the like. In addition, there is also a problem that before the process of grinding the lower surface side of the semiconductor wafer to reduce the thickness of the semiconductor wafer, it is necessary to arrange a glass plate having the same size as the semiconductor wafer on the semiconductor wafer for strengthening. , thus being constrained in the process of processing.

Contents of the invention

Therefore, an object of the present invention is to provide an imaging device and a manufacturing method thereof, which can reduce the number of steps and are less subject to constraints during the processing.

According to one embodiment of the present invention, there is provided an imaging device, characterized in that it has: a lens unit, light is incident from one surface of the lens unit; and an optical sensor, the optical sensor has: a semiconductor substrate, disposed on the lens On the other surface side of the unit, light emitted from the lens unit enters from one surface of the semiconductor substrate; and a photoelectric conversion device region and a connection pad provided on the other surface side of the semiconductor substrate.

According to another embodiment of the present invention, in the method of manufacturing an imaging device according to the invention of claim 9, in the semiconductor wafer of the optical sensor obtained by providing the photoelectric conversion device region and the connection pad on one surface of the semiconductor wafer, The other surface is provided with a lens unit.

Description of drawings

FIG. 1 is a cross-sectional view of an imaging device according to a first embodiment of the present invention.

FIG. 2 is a cross-sectional view of a part of components firstly prepared in an example of the method of manufacturing the imaging device shown in FIG. 1 .

FIG. 3 is a cross-sectional view of a subsequent process of FIG. 2 .

FIG. 4 is a cross-sectional view of a subsequent process of FIG. 3 .

FIG. 5 is a cross-sectional view of a subsequent process of FIG. 4 .

FIG. 6 is a cross-sectional view of a subsequent process of FIG. 5 .

FIG. 7 is a cross-sectional view of a subsequent process of FIG. 6 .

FIG. 8 is a cross-sectional view of a subsequent process of FIG. 7 .

FIG. 9 is a cross-sectional view of a subsequent process of FIG. 8 .

10 is a cross-sectional view of an imaging device as another example of the first embodiment of the present invention.

Fig. 11 is a cross-sectional view of an imaging device according to a second embodiment of the present invention.

12 is a cross-sectional view of an imaging device as another example of the second embodiment of the present invention.

Detailed ways

(first embodiment)

FIG. 1 shows a cross-sectional view of an imaging device as a first embodiment of the present invention. The camera has a light sensor 1 . The optical sensor 1 includes a planar rectangular semiconductor substrate 2 made of silicon, or gallium arsenide, which is a compound semiconductor, composed of a compound of Ga (gallium) and As (arsenic). A photoelectric conversion device region 3 including elements such as a CCD (Charge Coupled Device), a photodiode, and a phototransistor is provided at the center of the lower surface of the semiconductor substrate 2 . A plurality of connection pads 4 made of aluminum-based metal or the like and connected to the photoelectric conversion device region 3 are provided on the peripheral portion of the lower surface of the semiconductor substrate 2 .

On the lower surface of the semiconductor substrate 2 except the peripheral portion of the semiconductor substrate 2 and the central portion of the connection pad 2, a passivation film (insulating film) 5 made of silicon oxide, silicon nitride, etc. The central portion of the connection pad 4 is exposed through the opening 6 of the passivation film 5 . A protective film (insulating film) 7 made of polyimide resin or the like is provided on the lower surface of the passivation film 5 . An opening 8 is provided in a portion of the protective film 7 corresponding to the opening 6 of the passivation film 5 .

A plurality of wirings 9 are provided on the lower surface of the protective film 7 . The wiring 9 adopts a two-layer structure including a base metal layer 10 made of copper or the like provided on the lower surface of the protective film 7 and an upper metal layer 11 made of copper provided on the lower surface of the base metal layer 10 . One end of the wiring 9 is connected to the connection pad 4 through the openings 6 and 8 of the passivation film 5 and the protective film 7 .

A columnar electrode (electrode for external connection) 12 made of copper is provided on the lower surface of the pad of the wiring 9 . A sealing film 13 made of epoxy resin containing silica filler is provided on the lower surface of the peripheral portion of the semiconductor substrate 2 and the lower surface of the protective film 7 including the wiring 9 , and around the columnar electrodes 12 . Here, the columnar electrode 12 is provided such that its lower surface is flush with the lower surface of the sealing film 13 or is recessed by 1 to 2 μm from the lower surface of the sealing film 13 .

As described above, the optical sensor 1 is configured to include the semiconductor substrate 2, the photoelectric conversion device region 3, the connection pad 4, the passivation film 5, the protective film 7, and the 2 metal layers composed of the base metal layer 10 and the upper metal layer 11. Wiring 9 , columnar electrodes 12 , and sealing film 13 having a layered structure. Furthermore, solder balls 14 are provided on the lower surface of the columnar electrodes 12 of the optical sensor 1 .

On the upper surface of the semiconductor substrate 2 of the optical sensor 1 , a planar square visible light transmissive plate (visible light transmissive material) 21 is attached via a square frame-shaped adhesive layer 22 . Visible light transmission plate 21 has the function of infrared cut filter (infrared cut filter), can be infrared reflection type or infrared absorption type, and its plane size is slightly smaller than the plane size of semiconductor substrate 2 of optical sensor 1.

As the visible light transmitting plate 21, glass, methacrylic resin, fluorene resin, cycloolefin polymer, epoxy resin, polyethylene, polystyrene, AS resin, polyethylene terephthalate, Vinyl chloride resin, polycarbonate, translucent ceramics, and the like may be used as long as they transmit visible light.

A lens unit 23 is provided on the upper surface of the visible light transmission plate 21 . The lens unit 23 is configured by providing a lens 25 inside a frame-shaped lens holder 24 , and the lens 25 is arranged above the photoelectric conversion device region 3 of the optical sensor 1 . Also, the lower surface of the lens holder 24 of the lens unit 23 is attached to the peripheral portion of the upper surface of the visible light transmissive plate 21 via a frame-shaped adhesive layer 26 . As indicated by arrows in FIG. 1 , light enters from the side of the lens unit 23 provided on the other surface of the semiconductor substrate 2 . The light transmitted through the lens 25 is focused on the photoelectric conversion device region 3 and transmitted to the wiring 9 .

Here, since the lens 25 transmits infrared rays well, and the photoelectric conversion device region 3 has high infrared sensitivity, the sensitivity of the photosensor 1 is mainly limited by the visible light transmission plate 21 for blocking infrared rays located in front of the photoelectric conversion device region 3. Influence. Both the infrared reflectance and the infrared absorptivity of the visible light transmissive plate 21 are 90% or more. Therefore, the infrared transmittance of the visible light transmissive plate 21 is 10% or less. Also, the visible light transmissive plate 21 has a function of protecting the photoelectric conversion device region 3 . The wavelength of the infrared rays blocked by reflection or absorption is an electromagnetic wave having a frequency in a range of about 0.7 μm to 1000 μm. In addition, the wavelength of the visible light transmitted through the visible light transmissive plate 21 is an electromagnetic wave having a frequency in the range of 380 to 780 nm.

Next, an example of a method of manufacturing the imaging device will be described. First, as shown in FIG. 2, a photoelectric conversion device region 3, a connection pad 4, a passivation film 5, a protective film 7, a base The metal layer 10 and the upper metal layer 11 are components of the two-layer structure wiring 9 , columnar electrodes 12 , and sealing film 13 .

An example of a method of manufacturing the prepared components will be briefly described. First, the photoelectric conversion device region 3 , the connection pad 4 , the passivation film 5 , and the protective film 7 are formed under the semiconductor wafer 31 . Next, a base metal layer (10) is formed on the entire lower surface by electroless plating. Next, the upper metal layer 11 and the columnar electrodes 12 are formed by electrolytic plating using the base metal layer (10) as a plating current path. Next, by etching with the upper metal layer 11 as a mask, the base metal layer (10) in the region other than the upper metal layer 11 is removed to form a two-layer structure consisting of the base metal layer 10 and the upper metal layer 11. Line 9. Next, the sealing film 13 is formed around the columnar electrode 12 on the lower surface of the semiconductor wafer 31 around the protective film 7 and the lower surface of the protective film 7 including the wiring 9 . In this way, the prepared parts shown in Fig. 2 are obtained.

In this case, since it is not necessary to form the through-electrodes on the semiconductor wafer 31 , the number of steps can be reduced compared to the case where the through-electrodes are formed on the semiconductor wafer 31 . Here, the thickness of the semiconductor wafer 31 shown in FIG. 2 is thicker than the thickness of the semiconductor substrate 2 shown in FIG. 1 . In addition, in FIG. 2 , the area indicated by reference numeral 32 is a scribe line.

Next, as shown in FIG. 3 , solder balls 14 are formed on the lower surfaces of the columnar electrodes 12 . As a method of forming solder balls 14 , first, solder paste is applied to the lower surface of columnar electrodes 12 , or solder balls are mounted. Next, solder balls 14 are formed on the lower surfaces of columnar electrodes 12 by performing reflow.

Next, as shown in FIG. 4 , a protective tape 33 is prepared. This protective tape 33 is constituted by providing an ultraviolet-curable adhesive layer 35 in an uncured state on the upper surface of a base film 34 . Then, the uncured adhesive layer 35 of the protective tape 33 is attached to the lower surface of the sealing film 13 including the solder ball 14 . In this case, the thickness of the adhesive layer 35 is thicker than the height of the solder ball 14 . Therefore, in this state, the solder ball 14 is completely covered by the adhesive layer 35 .

Next, as shown in FIG. 5 , a chuck 36 is prepared. The suction pad 36 is connected to a vacuum source such as a vacuum pump (not shown), and is used to suck and hold components mounted on the suction pad 36 . Next, the lower surface of the protective tape 33 is placed on the suction cup 36 to be sucked and held. Next, the lower surface side of the semiconductor wafer 31 is appropriately ground using a grinding stone (not shown) to reduce the thickness of the semiconductor wafer 31 . In this state, since the sealing film 13 is formed on the lower surface side of the semiconductor wafer 31, the protective tape 33 is stuck on the lower surface side, and the lower surface of the protective tape 33 is sucked and held by the suction cup 36, even the semiconductor wafer The thinner thickness of 31 can also make the semiconductor wafer 31 less likely to bend. In this case, since the glass plate for strengthening is not used, it becomes less likely to be restricted in a process like this.

Next, as shown in FIG. 6 , on the upper surface of the semiconductor wafer 31 , the plane square visible light transmission plate 21 is attached to the plane square area surrounded by the scribe line 32 via the square frame-shaped adhesive layer 22 the central part of the interior. However, when the protective tape 33 is not attached to the lower surface side of the sealing film 13, and the total thickness of the semiconductor wafer 31 and the sealing film 13 is 350 to 300 μm or less, the amount of curvature of the semiconductor wafer 31 becomes large, making it difficult to visualize. Attachment of the light-transmitting plate 21 . In this regard, in this embodiment, since the protective tape 33 is attached to the lower surface side of the sealing film 13, and the lower surface of the protective tape 33 is further adsorbed and held by the suction cup 36, even if the total thickness of the semiconductor wafer 31 and the sealing film 13 is If it is 350 to 300 μm or less, the amount of warping of the semiconductor wafer 31 will not increase, and the attachment of the visible light transmissive plate 21 will not become difficult.

Next, the suction holding of the lower surface of the protective tape 33 by the suction cup 36 is released, and the protective tape 33 is removed from the suction cup 36 . Next, as shown in FIG. 7 , the lens unit 23 is prepared. The lens unit 23 is configured by providing a lens 25 inside a frame-shaped lens holder 24 . And, the lower surface of the lens holder 24 of the lens unit 23 is attached to the upper surface peripheral portion of the visible light transmissive plate 21 via a frame-shaped adhesive layer 26 .

Next, ultraviolet rays are irradiated from the lower surface side of the protective tape 33 to cure the uncured adhesive layer 35 and bring the protective tape 33 into a peelable state. Next, when the protective tape 33 is peeled off from the lower surface of the sealing film 13 including the solder balls 14 , as shown in FIG. 8 , the lower surface of the sealing film 13 including the solder balls 14 is exposed. Next, as shown in FIG. 9 , when the semiconductor wafer 31 and the sealing film 13 are diced along the dicing lines 32 , a plurality of imaging devices as shown in FIG. 1 are obtained.

In the imaging device obtained as described above, the direction of incident light is indicated by an arrow, and has a back-illuminated structure in which light enters from the other side of the semiconductor substrate 2 on which the lens unit 23 is provided. Accordingly, the incident light passes through the lens 25 , then passes through the visible light transmissive plate 21 and the semiconductor substrate 2 , and reaches the photoelectric conversion device region 3 . In this way, since there is no wiring between the lens and the photosensor, and the lens and the photosensor are close to each other, oblique light can easily reach it. At this time, since the wiring 9 and the columnar electrodes 12 provided on one side of the semiconductor substrate 2 are located below the photoelectric conversion device region 3, light is not blocked by the wiring 9 and the columnar electrodes 12, and the efficiency can be improved. . From the above reasons, even if the photoelectric conversion device region 3 is formed to overlap the wiring 9 and the columnar electrode 12 in a plan view, there is no problem at all. Also, although the thin semiconductor substrate 2 tends to be warped, in the structure having the columnar electrodes 12, the thick sealing film 13 can suppress warping.

In addition, in the state shown in FIG. 2, the electrical test of each optical sensor formation area is performed. 6 and 7, the visible light transmissive plate 21 and the lens unit 23 may not be attached. In this way, yield can be improved.

Also, in this embodiment, the visible light transmissive plate 21 is attached and the lens unit 23 is attached to the other surface of the semiconductor wafer 31, but it may also be mounted on the semiconductor substrate 2 after dicing and formed into individual pieces. visible light transmissive plate 21 and lens unit 23 . In addition, in this embodiment, the visible light transmission plate 21 is provided between the semiconductor substrate 2 of the optical sensor 1 and the lens unit 23, but it is also possible to use an infrared cut filter that transmits only 10% or less of infrared rays, for example. The lens 25 has a thin structure without the visible light transmissive plate 21 as shown in FIG. 10 .

(second embodiment)

FIG. 11 is a cross-sectional view of an imaging device as a second embodiment of the present invention. This imaging device also has a back-illuminated structure in which light is incident from the direction of the arrow, and is different from the imaging device shown in FIG. 1 in that the columnar electrode 12 is omitted from the optical sensor 1 . In this case, openings 13 a for connecting solder balls 14 to the lands of the wires 9 are formed in portions of the sealing film 13 corresponding to the lands of the wires 9 (electrodes for external connection).

In addition, the sealing film 13 may be formed of polyimide-based resin, solder resist, or the like. In addition, similarly to the first embodiment, in this embodiment, the visible light transmission plate 21 is provided between the semiconductor substrate 2 and the lens unit 23 of the optical sensor 1, but for example, it is also possible to use The lens 25 of the infrared cut filter for the following infrared rays has a thin structure without the visible light transmission plate 21 as shown in FIG. 12 .

The embodiments of the present invention have been described above, but the present invention is not limited thereto and includes the scope equivalent to the invention described in the claims. Hereinafter, appended notes refer to the invention described in the first claims of this application.

(Note)

The imaging device described in technical solution 1 is characterized in that it has:

a lens unit from which light is incident from one face; and

A light sensor that has:

a semiconductor substrate disposed on the other side of the lens unit, and light emitted from the lens unit is incident from one surface of the semiconductor substrate; and

The photoelectric conversion device region and the connection pad are provided on the other side of the semiconductor substrate.

The imaging device according to claim 2, wherein

In the imaging device according to claim 1, a visible light transmissive material having a visible light transmittance of 90% or more and an infrared transmittance of 10% or less is provided between the semiconductor substrate and the lens unit.

The imaging device according to claim 3, characterized in that

In the imaging device described in technical solution 2, the visible light transmissive material includes glass, methacrylic resin, fluorene resin, cycloolefin polymer, epoxy resin, polyethylene, polystyrene, AS resin, polyparaffin One of ethylene phthalate, vinylidene chloride resin, polycarbonate, and translucent ceramics.

The imaging device according to claim 4, wherein

In the imaging device described in technical solution 1, the above-mentioned light sensor has:

an insulating film provided on the other side of the semiconductor substrate;

wiring, connected to the connection pad and provided on the lower surface of the insulating film;

a columnar electrode disposed under the bonding area of the wiring; and

The sealing film is provided under the wiring, under the insulating film, and around the columnar electrodes.

The imaging device according to claim 5, wherein

In the imaging device according to claim 4, a solder ball is provided under the columnar electrode of the photosensor.

The imaging device according to claim 6, wherein

In the imaging device described in technical solution 1, the above-mentioned light sensor has:

an insulating film provided on the other side of the semiconductor substrate;

wirings provided on the lower surface of the insulating film in contact with the connection pads, and having pads as electrodes for external connection; and

The sealing film is provided under the insulating film including the wiring and in a region other than the pads of the wiring.

The imaging device according to claim 7, wherein

In the imaging device according to claim 6, solder balls are provided under the pads of the wiring of the photosensor.

The imaging device according to claim 8, wherein

In the imaging device according to claim 1, the lens constituting the lens unit has an infrared cut filter that transmits only 10% or less of infrared rays.

The method of manufacturing an imaging device according to claim 9, wherein:

A lens unit is disposed on the other surface of the semiconductor wafer of the photosensor obtained by providing the photoelectric conversion device region and the connection pad on one surface of the semiconductor wafer.

The method of manufacturing an imaging device according to claim 10, wherein:

In the method of manufacturing an imaging device according to claim 9, a visible light transmissive material having a visible light transmittance of 90% or more and an infrared transmittance of 10% or less is provided between the semiconductor substrate and the lens unit.

The method of manufacturing an imaging device according to claim 11, wherein:

In the method of manufacturing an imaging device according to claim 10, the visible light transmissive material includes glass, methacrylic resin, fluorene resin, cycloolefin polymer, epoxy resin, polyethylene, polystyrene, AS resin , polyethylene terephthalate, vinylidene chloride resin, polycarbonate, or one of light-transmitting ceramics.

The method of manufacturing an imaging device according to claim 12, wherein:

In the method of manufacturing an imaging device according to claim 9 , electrodes for external connection connected to the connection pads are formed, and the semiconductor wafer is diced to obtain a plurality of imaging devices.

The method of manufacturing an imaging device according to claim 13, wherein:

In the method of manufacturing an imaging device according to claim 10 , there is a step of forming a solder ball under the external connection electrode before the step of arranging the visible light transmissive material.

The method of manufacturing an imaging device according to claim 14, wherein:

In the method of manufacturing an imaging device according to claim 13, after the step of forming the solder balls, there is a step of polishing the upper surface side of the semiconductor wafer.

The method of manufacturing an imaging device according to claim 15, wherein:

In the method of manufacturing an imaging device according to claim 14, the step of attaching a protective tape to the semiconductor wafer after the step of forming the solder balls and before the step of grinding the upper surface side of the semiconductor wafer is included. The process on the solder ball side further includes a process of peeling off the protective tape after the process of arranging the lens unit.

The method of manufacturing an imaging device according to claim 16, wherein:

In the manufacturing method of the imaging device described in technical solution 12, the imaging device is made to have:

wiring, connected to the connection pad and provided on the lower surface of the insulating film;

a columnar electrode provided under the bonding area of the above-mentioned wiring as the above-mentioned electrode for external connection; and

The sealing film is provided under the insulating film including the wiring and around the columnar electrodes.

The method of manufacturing an imaging device according to claim 17, wherein:

In the manufacturing method of the imaging device described in technical solution 12, the imaging device is made to have:

wirings provided on the lower surface of the insulating film in contact with the connection pads, and having pads as electrodes for external connection; and

The sealing film is provided under the insulating film including the wiring and in a region other than the pads of the wiring.

The method of manufacturing an imaging device according to claim 18, wherein:

In the method of manufacturing an imaging device according to claim 9, the lens constituting the lens unit has an infrared cut filter that transmits only 10% or less of infrared rays.

The method of manufacturing an imaging device according to claim 19, wherein:

In the method of manufacturing an imaging device according to claim 10, the electrical test of each photosensor formation region is performed, and if there is a photosensor formation region judged to be defective, the photosensor formation region judged to be defective is , the above-mentioned visible light transmissive material and the above-mentioned lens unit are not configured.

Claims (17)

1. a camera head, is characterized in that, has:

Lens unit, light is from a face incident of this lens unit; And

Optical sensor, this optical sensor has:

Semiconductor substrate, is arranged on the another side side of said lens unit, a face incident from the light of said lens unit outgoing from this semiconductor substrate;

Connect pad, be arranged on the another side side of above-mentioned semiconductor substrate;

Electrooptical device region, is directly arranged at the another side side of above-mentioned semiconductor substrate;

Dielectric film, is arranged on the another side side of above-mentioned semiconductor substrate;

Distribution, is connected the pad ground connection that is connected and is arranged on the lower surface of above-mentioned dielectric film with above-mentioned;

Columnar electrode, is arranged under the weld zone of above-mentioned distribution, as external connection electrode; And

Diaphragm seal, under above-mentioned distribution and under above-mentioned dielectric film, and is arranged on above-mentioned columnar electrode around,

Wherein the aggregate thickness of above-mentioned semiconductor substrate and above-mentioned diaphragm seal is 350 μ m or is less than 350 μ m.

2. camera head according to claim 1, is characterized in that,

Between above-mentioned semiconductor substrate and said lens unit, possess visible light transmissivity and be more than 90%, infrared transmitting rate is the visible light transmission material below 10%.

3. camera head according to claim 2, is characterized in that,

Above-mentioned visible light transmission material comprises a certain in glass, methacrylic resin, fluorenes resinoid, cyclic olefin polymer, epoxy resin, polyethylene, polystyrene, AS resin, polyethylene terephthalate, permalon, Merlon, light transparent ceramic.

4. camera head according to claim 1, is characterized in that,

Above-mentioned columnar electrode at above-mentioned optical sensor has solder ball.

5. camera head according to claim 1, is characterized in that,

The lens that form said lens unit have a transmission ultrared infrared ray cut off filter below 10%.

6. a camera head, is characterized in that, has:

Lens unit, light is from a face incident of this lens unit; And

Optical sensor, this optical sensor has:

Semiconductor substrate, is arranged on the another side side of said lens unit, a face incident from the light of said lens unit outgoing from this semiconductor substrate;

Connect pad, be arranged on the another side side of above-mentioned semiconductor substrate;

Electrooptical device region, is set directly at the another side side of above-mentioned semiconductor substrate;

Dielectric film, is arranged on the another side side of above-mentioned semiconductor substrate;

Distribution, is connected the pad ground connection that is connected and is arranged on the lower surface of above-mentioned dielectric film with above-mentioned, and have the weld zone as external connection electrode; And

Diaphragm seal, is comprising under the above-mentioned dielectric film of above-mentioned distribution, and is arranged on the region except the above-mentioned weld zone of above-mentioned distribution,

Wherein the aggregate thickness of above-mentioned semiconductor substrate and above-mentioned diaphragm seal is 350 μ m or is less than 350 μ m.

7. camera head according to claim 6, is characterized in that,

Above-mentioned weld zone at the above-mentioned distribution of above-mentioned optical sensor has solder ball.

8. camera head according to claim 6, is characterized in that,

The aggregate thickness of above-mentioned semiconductor substrate and above-mentioned diaphragm seal is 350 μ m or is less than 350 μ m.

9. a manufacture method for camera head, is characterized in that,

Comprise:

The surface of the diaphragm seal forming on a face of the semiconductor substrate of optical sensor arranges the operation of boundary belt;

The operation of visible light transmittance plate is set on another face of semiconductor substrate;

On above-mentioned visible light transmittance plate, configure the operation of lens unit; And

After having configured lens unit, the operation that boundary belt is removed,

Above-mentioned optical sensor comprises: be set directly at the electrooptical device region on a face of above-mentioned semiconductor substrate, and be arranged on connection pad on a face of above-mentioned semiconductor substrate, dielectric film, be connected pad be connected ground connection be arranged on the lower surface of above-mentioned dielectric film distribution, be arranged on columnar electrode under the weld zone of above-mentioned distribution, under above-mentioned distribution and under dielectric film and be arranged on the diaphragm seal of the surrounding of above-mentioned columnar electrode

Wherein the aggregate thickness of above-mentioned semiconductor substrate and above-mentioned diaphragm seal is 350 μ m or is less than 350 μ m.

10. the manufacture method of camera head according to claim 9, is characterized in that,

Between above-mentioned semiconductor substrate and said lens unit, possess visible light transmissivity and be more than 90%, infrared transmitting rate is the visible light transmission material below 10%.

The manufacture method of 11. camera heads according to claim 10, is characterized in that,

Above-mentioned visible light transmission material comprises a certain in glass, methacrylic resin, fluorenes resinoid, cyclic olefin polymer, epoxy resin, polyethylene, polystyrene, AS resin, polyethylene terephthalate, permalon, Merlon, light transparent ceramic.

The manufacture method of 12. camera heads according to claim 10, is characterized in that,

Have before the operation of the above-mentioned visible light transmission material of configuration, under above-mentioned columnar electrode, form the operation of solder ball.

The manufacture method of 13. camera heads according to claim 12, is characterized in that,

The operation of have after the operation that forms above-mentioned solder ball, the upper surface side of above-mentioned semiconductor substrate being ground.

The manufacture method of 14. camera heads according to claim 13, is characterized in that,

Have after the operation that forms above-mentioned solder ball and before the operation that the upper surface side of above-mentioned semiconductor substrate is ground, boundary belt attached to the operation of the above-mentioned solder ball side of above-mentioned semiconductor substrate, and the operation that has after the operation of configuration said lens unit, above-mentioned boundary belt is peeled off.

The manufacture method of 15. camera heads according to claim 9, is characterized in that,

The lens of said lens unit have a transmission ultrared infrared ray cut off filter below 10%.

The manufacture method of 16. camera heads according to claim 10, is characterized in that,

Carry out each optical sensor and form the electric test in region, in the situation that existence is judged as bad optical sensor, form region, for this, be judged as bad optical sensor and form region, be unworthy of being set up and state visible light transmission material and said lens unit.

The manufacture method of 17. 1 kinds of camera heads, is characterized in that,

Comprise:

The surface of the diaphragm seal forming on a face of the semiconductor substrate of optical sensor arranges the operation of boundary belt;

The operation of visible light transmittance plate is set on another face of semiconductor substrate;

On above-mentioned visible light transmittance plate, configure the operation of lens unit; And

After having configured lens unit, the operation that boundary belt is removed,

Above-mentioned optical sensor comprises: be set directly at the electrooptical device region on a face of above-mentioned semiconductor substrate, and be arranged on connection pad on a face of above-mentioned semiconductor substrate, dielectric film, be connected the pad ground connection that is connected and be arranged on the lower surface of above-mentioned dielectric film and there is distribution as the weld zone of external connection electrode, comprising under the above-mentioned dielectric film of above-mentioned distribution and be arranged on the diaphragm seal in the region except the weld zone of above-mentioned distribution with above-mentioned

Wherein the aggregate thickness of above-mentioned semiconductor substrate and above-mentioned diaphragm seal is 350 μ m or is less than 350 μ m.