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CN102280428A - Packaging piece and manufacture method thereof - Google Patents

Packaging piece and manufacture method thereof Download PDF

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Publication number
CN102280428A
CN102280428A CN2011102100918A CN201110210091A CN102280428A CN 102280428 A CN102280428 A CN 102280428A CN 2011102100918 A CN2011102100918 A CN 2011102100918A CN 201110210091 A CN201110210091 A CN 201110210091A CN 102280428 A CN102280428 A CN 102280428A
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China
Prior art keywords
substrate
wiring pattern
package
electrically connected
semiconductor chips
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CN2011102100918A
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Chinese (zh)
Inventor
马慧舒
杜茂华
陈松
阮春燕
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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Samsung Semiconductor China R&D Co Ltd
Samsung Electronics Co Ltd
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Priority to CN2011102100918A priority Critical patent/CN102280428A/en
Publication of CN102280428A publication Critical patent/CN102280428A/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10Bump connectors; Manufacturing methods related thereto
    • H01L2224/15Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161Disposition
    • H01L2224/16151Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32135Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/32145Disposition the layer connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being stacked
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06517Bump or bump-like direct electrical connections from device to substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes
    • H01L2225/04All the devices being of a type provided for in the same main group of the same subclass of class H10, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L2225/065All the devices being of a type provided for in the same main group of the same subclass of class H10
    • H01L2225/06503Stacked arrangements of devices
    • H01L2225/06555Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking
    • H01L2225/06562Geometry of the stack, e.g. form of the devices, geometry to facilitate stacking at least one device in the stack being rotated or offset
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H01L23/3128Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation the substrate having spherical bumps for external connection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/1515Shape
    • H01L2924/15158Shape the die mounting substrate being other than a cuboid
    • H01L2924/15159Side view
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1531Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151Die mounting substrate
    • H01L2924/153Connection portion
    • H01L2924/1532Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H01L2924/15321Connection portion the connection portion being formed on the die mounting surface of the substrate being a ball array, e.g. BGA

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  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

本发明提供一种封装件及其制造方法。所述封装件包括:基板;布线图案,形成在基板上;多个半导体芯片,堆叠在基板的上表面上,并电连接到布线图案;包封材料层,形成在基板的上表面上,以包封所述多个半导体芯片,其中,基板包括至少一个主体部分和至少一个台阶状部分,所述多个半导体芯片中的至少一个半导体芯片的至少一部分设置在所述至少一个台阶状部分上并电连接到布线图案的设置在所述至少一个台阶状部分上的至少一部分。因为采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板,所以简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。

Figure 201110210091

The invention provides a package and a manufacturing method thereof. The package includes: a substrate; a wiring pattern formed on the substrate; a plurality of semiconductor chips stacked on an upper surface of the substrate and electrically connected to the wiring pattern; an encapsulation material layer formed on the upper surface of the substrate to Encapsulating the plurality of semiconductor chips, wherein the substrate includes at least one body portion and at least one stepped portion, at least a portion of at least one semiconductor chip of the plurality of semiconductor chips is disposed on the at least one stepped portion and Electrically connected to at least a portion of the wiring pattern disposed on the at least one stepped portion. Because the semiconductor material is used to form a substrate for mounting chips to replace the printed circuit board in the prior art, the manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, and the electrical performance of the package is improved. And it is possible to implement a stacked chip package at the wafer level.

Figure 201110210091

Description

封装件及其制造方法Package and manufacturing method thereof

技术领域 technical field

本发明涉及半导体封装领域,更具体地讲,涉及一种封装件及其制造方法。The present invention relates to the field of semiconductor packaging, and more specifically, to a packaging component and a manufacturing method thereof.

背景技术 Background technique

随着半导体技术的不断发展,对于多功能的半导体芯片封装件的需求在不断增加。考虑到装置小型化的需要,需要将多个分别执行不同的功能的半导体芯片被设置在单个封装件中,以减少所需封装件的数量和所占空间。因此,已经开发出了堆叠芯片式封装件。在堆叠芯片式封装件中,例如,通过引线键合或倒装芯片等工艺,将彼此堆叠设置的多个半导体芯片安装在作为基板的印刷电路板(PCB)上,并通过设置在印刷电路板(PCB)的与安装有半导体芯片的表面相对的表面上的连接件将半导体芯片电连接到外部。With the continuous development of semiconductor technology, the demand for multifunctional semiconductor chip packages is increasing. Considering the need for device miniaturization, it is necessary to arrange a plurality of semiconductor chips respectively performing different functions in a single package, so as to reduce the number and occupied space of required packages. Therefore, stacked chip packages have been developed. In a stacked chip package, for example, a plurality of semiconductor chips arranged on top of each other are mounted on a printed circuit board (PCB) as a substrate by processes such as wire bonding or flip chip, and are The connectors on the surface of the (PCB) opposite to the surface on which the semiconductor chip is mounted electrically connect the semiconductor chip to the outside.

如上所述,在现有技术中,需要在制造堆叠芯片式封装件的过程中使用具有预定图案的印刷电路板(PCB)。因此,制造工艺较复杂,难以降低堆叠芯片式封装件的制造成本,且在制造出的堆叠芯片式封装件中的金属连接引线较长,信号完整性较差。此外,限于印刷电路板(PCB)的尺寸而难以减小堆叠芯片式封装件的尺寸和所占空间。因此,现有的堆叠芯片式封装件及其制造方法无法满足不断加深的产品多样化需求以及高速度、低成本、小尺寸、电性能优秀的发展趋势。As described above, in the related art, it is necessary to use a printed circuit board (PCB) having a predetermined pattern in the process of manufacturing the stacked die package. Therefore, the manufacturing process is relatively complicated, and it is difficult to reduce the manufacturing cost of the stacked chip package, and the metal connection leads in the manufactured stacked chip package are relatively long, and the signal integrity is poor. In addition, it is difficult to reduce the size and space occupied by the stacked die package due to the limited size of the printed circuit board (PCB). Therefore, the existing stacked chip package and its manufacturing method cannot meet the ever-increasing demand for product diversification and the development trend of high speed, low cost, small size, and excellent electrical performance.

发明内容 Contents of the invention

本发明的示例性实施例的目的在于克服在现有技术中的上述和其他缺点。为此,本发明的示例性实施例提供一种封装件及其制造方法,其中,采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板(PCB),从而简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。It is an object of exemplary embodiments of the present invention to overcome the above and other disadvantages in the prior art. To this end, exemplary embodiments of the present invention provide a package and a manufacturing method thereof, in which a semiconductor material is used to form a substrate for mounting a chip instead of a printed circuit board (PCB) in the prior art, thereby The manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, the electrical performance of the package is improved, and the stacked chip package can be realized at the wafer level.

本发明的示例性实施例还提供一种封装件及其制造方法,其中,将形成在基板上的布线图案的至少一部分暴露到所述封装件的外部,并在布线图案的暴露的至少一部分上设置连接件,从而简化了封装件的结构,降低了封装件的制造成本,提高了封装件的电性能。Exemplary embodiments of the present invention also provide a package and a method of manufacturing the same, in which at least a part of a wiring pattern formed on a substrate is exposed to the outside of the package, and at least a part of the wiring pattern is exposed. The connector is provided, thereby simplifying the structure of the package, reducing the manufacturing cost of the package, and improving the electrical performance of the package.

本发明的示例性实施例还提供一种封装件及其制造方法,其中,在包封材料层上设置电连接到布线图案的暴露的至少一部分的另一布线图案,并在所述另一布线图案上设置连接件,从而提高了连接件(例如,焊球)的设置空间,简化了制造工艺(例如,降低了植球工艺的难度)。Exemplary embodiments of the present invention also provide a package and a manufacturing method thereof, wherein another wiring pattern electrically connected to at least a portion of the wiring pattern exposed is provided on the encapsulation material layer, and The connecting parts are arranged on the pattern, so as to increase the installation space of the connecting parts (for example, solder balls), and simplify the manufacturing process (for example, reduce the difficulty of the ball planting process).

根据本发明的示例性实施例,一种封装件包括:基板;布线图案,形成在基板上;多个半导体芯片,堆叠在基板的上表面上,并电连接到布线图案;包封材料层,形成在基板的上表面上,以包封所述多个半导体芯片,其中,基板包括至少一个主体部分和至少一个台阶状部分,所述多个半导体芯片中的至少一个半导体芯片的至少一部分设置在所述至少一个台阶状部分上并电连接到布线图案的设置在所述至少一个台阶状部分上的至少一部分。According to an exemplary embodiment of the present invention, a package includes: a substrate; a wiring pattern formed on the substrate; a plurality of semiconductor chips stacked on an upper surface of the substrate and electrically connected to the wiring pattern; an encapsulation material layer, formed on an upper surface of a substrate to encapsulate the plurality of semiconductor chips, wherein the substrate includes at least one body portion and at least one stepped portion, at least a portion of at least one of the plurality of semiconductor chips is disposed on The at least one stepped portion is on and electrically connected to at least a portion of the wiring pattern disposed on the at least one stepped portion.

基板由半导体材料形成。The substrate is formed of semiconductor material.

所述至少一个主体部分和所述至少一个台阶状部分通过蚀刻工艺而一体地形成。The at least one body portion and the at least one stepped portion are integrally formed through an etching process.

布线图案通过镀覆工艺形成在基板上。A wiring pattern is formed on the substrate through a plating process.

所述多个半导体芯片以倒装芯片的方式堆叠地安装在基板的上表面上并电连接到布线图案。The plurality of semiconductor chips are stack-mounted on the upper surface of the substrate in a flip-chip manner and are electrically connected to the wiring patterns.

所述封装件还包括:通孔,形成在基板中,并电连接到布线图案。The package also includes a via hole formed in the substrate and electrically connected to the wiring pattern.

所述封装件还包括:连接件,设置在基板的下表面上,连接件被通孔电连接到布线图案,从而将所述多个半导体芯片电连接到外部。The package further includes: a connector provided on the lower surface of the substrate, the connector being electrically connected to the wiring pattern by the via hole, thereby electrically connecting the plurality of semiconductor chips to the outside.

布线图案的至少另一部分暴露到所述封装件的外部。At least another part of the wiring pattern is exposed to the outside of the package.

所述封装件还包括:连接件,设置在布线图案的暴露的所述至少另一部分上,连接件电连接到布线图案的暴露的所述至少另一部分,以将所述多个半导体芯片电连接到外部。The package further includes: a connection member disposed on the at least another exposed portion of the wiring pattern, the connection member being electrically connected to the at least another exposed portion of the wiring pattern to electrically connect the plurality of semiconductor chips to the outside.

所述多个半导体芯片中的至少另一半导体芯片设置在所述至少一个主体部分上并电连接到布线图案的设置在所述至少一个主体部分上的至少又一部分,包括设置在所述至少一个台阶状部分上的至少一部分的所述至少一个半导体芯片的至少另一部分堆叠在所述至少另一半导体芯片上。At least another semiconductor chip of the plurality of semiconductor chips is disposed on the at least one main body portion and is electrically connected to at least a further part of the wiring pattern disposed on the at least one main body portion, including a portion disposed on the at least one main body portion. At least another part of at least a part of the at least one semiconductor chip on the stepped portion is stacked on the at least another semiconductor chip.

根据本发明的另一示例性实施例,一种制造封装件的方法包括如下步骤:形成基板,其中,基板包括至少一个主体部分和至少一个台阶状部分;在基板上形成布线图案;将多个半导体芯片堆叠在基板的上表面上并电连接到布线图案,其中,将所述多个半导体芯片中的至少一个半导体芯片的至少一部分设置在所述至少一个台阶状部分上并电连接到布线图案的设置在所述至少一个台阶状部分上的至少一部分;在基板的上表面上形成包封材料层,以包封所述多个半导体芯片。According to another exemplary embodiment of the present invention, a method of manufacturing a package includes the steps of: forming a substrate, wherein the substrate includes at least one body portion and at least one stepped portion; forming a wiring pattern on the substrate; semiconductor chips are stacked on the upper surface of the substrate and electrically connected to the wiring pattern, wherein at least a part of at least one semiconductor chip of the plurality of semiconductor chips is disposed on the at least one stepped portion and electrically connected to the wiring pattern at least a part of which is disposed on the at least one stepped portion; forming an encapsulation material layer on the upper surface of the substrate to encapsulate the plurality of semiconductor chips.

基板由半导体材料形成。The substrate is formed of semiconductor material.

在形成基板的步骤中,通过蚀刻工艺来一体地形成所述至少一个主体部分和所述至少一个台阶状部分。In the forming of the substrate, the at least one body portion and the at least one stepped portion are integrally formed through an etching process.

通过镀覆工艺来在基板上形成布线图案。Wiring patterns are formed on the substrate through a plating process.

以倒装芯片的方式将所述多个半导体芯片安装在基板的上表面上并电连接到布线图案。The plurality of semiconductor chips are flip-chip mounted on the upper surface of the substrate and electrically connected to the wiring patterns.

所述方法还包括:在基板中形成电连接到布线图案的通孔。The method further includes forming a via hole electrically connected to the wiring pattern in the substrate.

所述方法还包括:在基板的下表面上设置连接件,使得连接件被通孔电连接到布线图案,从而将所述多个半导体芯片电连接到外部。The method further includes providing a connection on a lower surface of the substrate such that the connection is electrically connected to the wiring pattern by a via hole, thereby electrically connecting the plurality of semiconductor chips to the outside.

在形成包封材料层的步骤中,将布线图案的至少另一部分暴露到所述封装件的外部。In the step of forming the encapsulation material layer, at least another part of the wiring pattern is exposed to the outside of the package.

所述方法还包括:在布线图案的暴露的所述至少另一部分上形成连接件,使得连接件电连接到布线图案的暴露的所述至少另一部分,以将所述多个半导体芯片电连接到外部。The method further includes forming a connection on the at least another exposed portion of the wiring pattern such that the connection is electrically connected to the at least another exposed portion of the wiring pattern to electrically connect the plurality of semiconductor chips to external.

在堆叠所述多个半导体芯片的步骤中,将所述多个半导体芯片中的至少另一半导体芯片设置在所述至少一个主体部分上并电连接到布线图案的设置在所述至少一个主体部分上的至少又一部分,并将包括设置在所述至少一个台阶状部分上的至少一部分的所述至少一个半导体芯片的至少另一部分堆叠在所述至少另一半导体芯片上。In the step of stacking the plurality of semiconductor chips, at least another semiconductor chip of the plurality of semiconductor chips is disposed on the at least one main body portion and is electrically connected to the wiring pattern disposed on the at least one main body portion. and stacking at least another portion of the at least one semiconductor chip including at least a portion disposed on the at least one stepped portion on the at least another semiconductor chip.

附图说明 Description of drawings

图1是示出根据一个本发明的示例性实施例的封装件的剖视图;1 is a cross-sectional view illustrating a package according to an exemplary embodiment of the present invention;

图2是示出根据另一个本发明的示例性实施例的封装件的剖视图;2 is a cross-sectional view illustrating a package according to another exemplary embodiment of the present invention;

图3A至图3F是示出根据本发明的示例性实施例的制造封装件的方法的剖视图;3A to 3F are cross-sectional views illustrating a method of manufacturing a package according to an exemplary embodiment of the present invention;

图4A至图4G是示出根据本发明的示例性实施例的制造封装件的方法的剖视图。4A to 4G are cross-sectional views illustrating a method of manufacturing a package according to an exemplary embodiment of the present invention.

具体实施方式 Detailed ways

下文中,将参照附图来详细描述本发明的示例性实施例。然而,本发明可以以许多不同的形式来实施,且不应该限于这里阐述的示例性实施例。相反,提供这些示例性实施例使得本公开将是彻底和完整的,并可以把示例性实施例的范围充分地传达给本领域技术人员。为了清楚起见,可能在附图中夸大了层和区域的尺寸和相对尺寸。此外,在附图中,相同或相似的标号可以表示相同或相似的元件。Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. This invention may, however, be embodied in many different forms and should not be limited to the exemplary embodiments set forth herein. Rather, these exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the exemplary embodiments to those skilled in the art. The size and relative sizes of layers and regions may be exaggerated in the drawings for clarity. Also, in the drawings, the same or similar reference numerals may denote the same or similar elements.

图1是示出根据本发明的示例性实施例的封装件10的剖视图。FIG. 1 is a cross-sectional view illustrating a package 10 according to an exemplary embodiment of the present invention.

如图1中所示,根据本发明的示例性实施例的封装件10可以包括基板11、布线图案12、半导体芯片13和包封材料层14。As shown in FIG. 1 , a package 10 according to an exemplary embodiment of the present invention may include a substrate 11 , a wiring pattern 12 , a semiconductor chip 13 and an encapsulation material layer 14 .

基板11可以由半导体材料形成,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而由其他的半导体材料、绝缘材料和/或导电材料来形成基板11。例如,如果由导电材料(例如,金属)形成基板11,则可以根据需要而在由金属形成的基板11的整个表面或一部分表面上形成介电层,以提供良好的绝缘特性。The substrate 11 may be formed of a semiconductor material, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 11 may be formed of other semiconductor materials, insulating materials and/or conductive materials as required. For example, if the substrate 11 is formed of a conductive material such as metal, a dielectric layer may be formed on the entire surface or a part of the surface of the substrate 11 formed of the metal as needed to provide good insulating properties.

基板11可以包括至少一个主体部分11a和至少一个台阶状部分11b、11c。虽然在图1中仅示出了基板11包括一个主体部分11a和两个台阶状部分11b、11c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而形成包括多个主体部分和一个或两个以上的台阶状部分的基板11。The substrate 11 may include at least one body portion 11a and at least one stepped portion 11b, 11c. Although it is only shown in FIG. 1 that the substrate 11 includes one body portion 11a and two stepped portions 11b, 11c, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 11 including a plurality of main body parts and one or more than two stepped parts may be formed as required.

如图1中所示,至少一个主体部分11a和至少一个台阶状部分11b、11c可以具有不同的高度。例如,主体部分11a可以具有最小的高度,台阶状部分11c可以具有最大的高度,台阶状部分11b可以具有大于主体部分11a的高度并小于台阶状部分11c的高度的高度。如此,可以在基板11的上表面上形成具有不同高度的台阶形状。在本发明的至少一个其他的示例性实施例中,至少一个主体部分和至少一个台阶状部分中相邻的两个部分的高度差根据将要安装的半导体芯片的厚度来确定。As shown in Fig. 1, at least one body portion 11a and at least one stepped portion 11b, 11c may have different heights. For example, the body portion 11a may have the smallest height, the stepped portion 11c may have the largest height, and the stepped portion 11b may have a height greater than that of the body portion 11a and smaller than that of the stepped portion 11c. In this way, step shapes having different heights can be formed on the upper surface of the substrate 11 . In at least one other exemplary embodiment of the present invention, a height difference between two adjacent parts of the at least one body part and the at least one stepped part is determined according to the thickness of the semiconductor chip to be mounted.

例如,当基板11由半导体材料形成时,至少一个主体部分11a和至少一个台阶状部分11b、11c可以通过蚀刻工艺而一体地形成,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以通过其他工艺来形成至少一个主体部分11a和至少一个台阶状部分11b、11c。例如,当基板11由诸如金属的导电材料形成时,可以通过诸如冲压工艺来形成至少一个主体部分11a和至少一个台阶状部分11b、11c;当基板11由诸如树脂的绝缘材料形成时,可以通过诸如注入成型工艺来形成包括至少一个主体部分11a和至少一个台阶状部分11b、11c的基板11。For example, when the substrate 11 is formed of a semiconductor material, at least one body portion 11a and at least one stepped portion 11b, 11c may be integrally formed through an etching process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, at least one body portion 11a and at least one stepped portion 11b, 11c may be formed by other processes. For example, when the substrate 11 is formed of a conductive material such as metal, at least one body portion 11a and at least one stepped portion 11b, 11c may be formed by a process such as punching; when the substrate 11 is formed of an insulating material such as resin, it may be formed by A process such as injection molding is used to form the substrate 11 comprising at least one body portion 11a and at least one stepped portion 11b, 11c.

布线图案12可以形成在基板11(例如,基板11的上表面和/或下表面)上。例如,布线图案12可以形成在基板11的至少一个主体部分11a和至少一个台阶状部分11b、11c上。如图1中所示,布线图案12可以包括形成在至少一个主体部分11a上的至少一部分12a和形成在至少一个台阶状部分11b、11c上的至少一部分12b、12c。可以由诸如金属的导电材料通过各种工艺在基板11上形成布线图案12。例如,可以由诸如金属的导电材料通过沉积工艺和/或镀覆工艺形成布线图案12,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺来形成布线图案12。例如,当基板11由半导体材料形成时,可以诸如通过掺杂工艺来形成布线图案12。在本发明的至少一个其他的示例性实施例中,当基板11由诸如金属的导电材料形成时,可以在如上所述的形成在基板11上的介电层上形成布线图案12。The wiring pattern 12 may be formed on the substrate 11 (eg, an upper surface and/or a lower surface of the substrate 11 ). For example, the wiring pattern 12 may be formed on at least one body portion 11 a and at least one stepped portion 11 b, 11 c of the substrate 11 . As shown in FIG. 1 , the wiring pattern 12 may include at least one portion 12a formed on at least one body portion 11a and at least one portion 12b, 12c formed on at least one stepped portion 11b, 11c. The wiring pattern 12 may be formed on the substrate 11 by various processes from a conductive material such as metal. For example, the wiring pattern 12 may be formed of a conductive material such as metal through a deposition process and/or a plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 12 as required. For example, when the substrate 11 is formed of a semiconductor material, the wiring pattern 12 may be formed such as by a doping process. In at least one other exemplary embodiment of the present invention, when the substrate 11 is formed of a conductive material such as metal, the wiring pattern 12 may be formed on a dielectric layer formed on the substrate 11 as described above.

多个半导体芯片13可以堆叠并附着在基板11上(例如,堆叠并附着在基板11的上表面上),并分别电连接到布线图案12。例如,多个半导体芯片13可以堆叠在基板11的至少一个主体部分11a和至少一个台阶状部分11b上。如图1中所示,多个半导体图案13可以包括:至少一个半导体芯片13a,设置在至少一个主体部分11a上并电连接到布线图案12的设置在至少一个主体部分11a上的至少一部分12a;至少一个半导体芯片13b、13c,其中,半导体芯片13b的至少一部分可以设置在至少一个台阶状部分11b上并电连接到布线图案12的设置在至少一个台阶状部分11b上的至少一部分12b,半导体芯片13c的至少一部分可以设置在至少一个台阶状部分11c上并电连接到布线图案12的设置在至少一个台阶状部分11c上的至少一部分12c。此外,半导体芯片13b的至少另一部分可以堆叠地设置在半导体芯片13a上,半导体芯片13c的至少另一部分可以堆叠地设置在半导体芯片13b上。虽然在图1中仅示出了一个设置在至少一个主体部分11a上的半导体芯片13a和两个堆叠在半导体芯片13a上的半导体芯片13b和13c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,封装件10可以包括多个设置在至少一个主体部分11a上的半导体芯片13a和一个或两个以上的堆叠在所述多个半导体芯片13a中的至少一个半导体芯片13a上的半导体芯片,其中,所述一个或两个以上的堆叠在半导体芯片13a上的半导体芯片中的至少一个半导体芯片可以包括设置在至少一个台阶状部分上并电连接到布线图案12的设置在至少一个台阶状部分上的至少一部分的至少一部分。A plurality of semiconductor chips 13 may be stacked and attached on the substrate 11 (eg, stacked and attached on the upper surface of the substrate 11 ), and electrically connected to the wiring patterns 12 , respectively. For example, a plurality of semiconductor chips 13 may be stacked on at least one body portion 11 a and at least one stepped portion 11 b of the substrate 11 . As shown in FIG. 1, the plurality of semiconductor patterns 13 may include: at least one semiconductor chip 13a disposed on at least one body portion 11a and electrically connected to at least a portion 12a of the wiring pattern 12 disposed on at least one body portion 11a; At least one semiconductor chip 13b, 13c, wherein at least a part of the semiconductor chip 13b may be disposed on the at least one stepped portion 11b and electrically connected to at least a portion 12b of the wiring pattern 12 disposed on the at least one stepped portion 11b, the semiconductor chip At least a portion of 13c may be disposed on at least one stepped portion 11c and electrically connected to at least a portion 12c of the wiring pattern 12 disposed on at least one stepped portion 11c. Furthermore, at least another part of the semiconductor chip 13b may be stacked on the semiconductor chip 13a, and at least another part of the semiconductor chip 13c may be stacked on the semiconductor chip 13b. Although only one semiconductor chip 13a disposed on at least one body portion 11a and two semiconductor chips 13b and 13c stacked on the semiconductor chip 13a are shown in FIG. 1 , exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the package 10 may include a plurality of semiconductor chips 13a disposed on at least one main body portion 11a and one or more than two semiconductor chips stacked in the plurality of semiconductor chips 13a. A semiconductor chip on at least one semiconductor chip 13a, wherein at least one of the one or more than two semiconductor chips stacked on the semiconductor chip 13a may include a semiconductor chip disposed on at least one stepped portion and electrically connected to At least a portion of at least a portion of the wiring pattern 12 disposed on at least one stepped portion.

如图1中所示,多个半导体芯片13可以以倒装芯片的方式堆叠地安装在基板11上并电连接到布线图案12,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用诸如引线键合等各种安装方式来堆叠地安装多个半导体芯片13。As shown in FIG. 1 , a plurality of semiconductor chips 13 may be stack-mounted on the substrate 11 in a flip-chip manner and electrically connected to the wiring pattern 12 , however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 13 may be stacked and mounted by various mounting methods such as wire bonding as required.

包封材料层14可以形成在基板11(例如,基板11的上表面)上,以包封多个半导体芯片13。可以由诸如环氧树脂的包封材料通过注入成型工艺形成包封材料层14。An encapsulation material layer 14 may be formed on the substrate 11 (eg, the upper surface of the substrate 11 ) to encapsulate the plurality of semiconductor chips 13 . The encapsulation material layer 14 may be formed from an encapsulation material such as epoxy resin through an injection molding process.

根据本发明的一个示例性实施例,封装件10还可以包括通孔15。通孔15可以形成在基板11中,并电连接到布线图案12。在这样的情况下,通孔15可以为导电通孔。例如,可以诸如通过蚀刻工艺来在基板11中形成过孔并在过孔中镀覆或填充导电材料,以形成导电的通孔15。According to an exemplary embodiment of the present invention, the package 10 may further include a through hole 15 . Via holes 15 may be formed in the substrate 11 and electrically connected to the wiring pattern 12 . In such a case, the via 15 may be a conductive via. For example, vias may be formed in the substrate 11 such as by an etching process and plated or filled with a conductive material in the vias to form the conductive vias 15 .

如图1中所示,封装件10还可以包括连接件16。连接件16可以设置在基板11的下表面上。例如,连接件16可以设置在形成在基板11的下表面上的布线图案12上,和/或连接件16可以设置为与通孔16对应(例如,设置在通孔16上或周围)。连接件16可以被通孔15电连接到布线图案12,从而将多个半导体芯片13中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。连接件16可以为焊球,如图1中所示。在这样的情况下,封装件10还可以包括用于设置焊球16的焊盘。焊盘可以形成在基板11的下表面上的布线图案12和/或通孔16上或周围,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接件16设置为连接凸起(bump)、引脚(pin)等。As shown in FIG. 1 , package 10 may also include connectors 16 . The connector 16 may be disposed on the lower surface of the substrate 11 . For example, the connector 16 may be provided on the wiring pattern 12 formed on the lower surface of the substrate 11, and/or the connector 16 may be provided corresponding to (eg, on or around) the through hole 16 . The connector 16 may be electrically connected to the wiring pattern 12 by the via hole 15, thereby electrically connecting at least one semiconductor chip among the plurality of semiconductor chips 13 to the outside (eg, a printed circuit board (PCB)). The connectors 16 may be solder balls, as shown in FIG. 1 . In such a case, the package 10 may also include pads for disposing the solder balls 16 . Pads may be formed on or around the wiring patterns 12 and/or the via holes 16 on the lower surface of the substrate 11 , however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the connecting member 16 may be configured as a connecting bump, a pin, etc. as required.

在参照图1描述的根据本发明示例性实施例的封装件10中,可以采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板(PCB)。可以采用镀覆导电材料或掺杂等工艺来在由半导体材料形成的基板上形成布线图案,并可以采用诸如蚀刻的方式在基板中形成用于电连接的通孔。因此,简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。In the package 10 according to the exemplary embodiment of the present invention described with reference to FIG. 1 , a semiconductor material may be used to form a substrate for mounting chips instead of a printed circuit board (PCB) in the related art. A process such as plating a conductive material or doping may be used to form a wiring pattern on a substrate formed of a semiconductor material, and a method such as etching may be used to form a through hole for electrical connection in the substrate. Therefore, the manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, the electrical performance of the package is improved, and the stacked chip package can be realized at the wafer level.

图2是示出根据本发明的示例性实施例的封装件20的剖视图,为了简明起见,采用相似的标号指示与图1中的元件相同或相似的元件,并将省略对它们的详细描述。2 is a cross-sectional view illustrating a package 20 according to an exemplary embodiment of the present invention, and for the sake of brevity, like reference numerals are used to designate elements identical or similar to those in FIG. 1 and their detailed descriptions will be omitted.

如图2中所示,根据本发明的示例性实施例的封装件20可以包括基板21、布线图案22、半导体芯片23和包封材料层24。As shown in FIG. 2 , a package 20 according to an exemplary embodiment of the present invention may include a substrate 21 , a wiring pattern 22 , a semiconductor chip 23 and an encapsulation material layer 24 .

基板21可以由半导体材料形成,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而由其他的半导体材料、绝缘材料和/或导电材料来形成基板21。例如,如果由导电材料(例如,金属)形成基板21,则可以根据需要而在由金属形成的基板21的整个表面或一部分表面上形成介电层,以提供良好的绝缘特性。The substrate 21 may be formed of a semiconductor material, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 21 may be formed of other semiconductor materials, insulating materials and/or conductive materials as required. For example, if the substrate 21 is formed of a conductive material such as metal, a dielectric layer may be formed on the entire surface or a part of the surface of the substrate 21 formed of the metal as needed to provide good insulating properties.

基板21可以包括至少一个主体部分21a和至少一个台阶状部分21b、21c。虽然在图2中仅示出了基板21包括一个主体部分21a和两个台阶状部分21b、21c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而形成包括多个主体部分和一个或两个以上的台阶状部分的基板21。The base plate 21 may include at least one body portion 21a and at least one stepped portion 21b, 21c. Although it is only shown in FIG. 2 that the substrate 21 includes one body portion 21a and two stepped portions 21b, 21c, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 21 including a plurality of main body parts and one or more than two stepped parts may be formed as required.

如图2中所示,至少一个主体部分21a和至少一个台阶状部分21b、21c可以具有不同的高度。例如,主体部分21a可以具有最小的高度,台阶状部分11c可以具有最大的高度,台阶状部分21b可以具有大于主体部分21a的高度并小于台阶状部分21c的高度的高度。如此,可以在基板21的上表面上形成具有不同高度的台阶形状。在本发明的至少一个其他的示例性实施例中,至少一个主体部分和至少一个台阶状部分中相邻的两个部分的高度差根据将要安装的半导体芯片的厚度来确定。As shown in Fig. 2, at least one body portion 21a and at least one stepped portion 21b, 21c may have different heights. For example, the body portion 21a may have the smallest height, the stepped portion 11c may have the largest height, and the stepped portion 21b may have a height greater than that of the body portion 21a and smaller than that of the stepped portion 21c. In this manner, step shapes having different heights can be formed on the upper surface of the substrate 21 . In at least one other exemplary embodiment of the present invention, a height difference between two adjacent parts of the at least one body part and the at least one stepped part is determined according to the thickness of the semiconductor chip to be mounted.

例如,当基板21由半导体材料形成时,至少一个主体部分21a和至少一个台阶状部分21b、21c可以通过蚀刻工艺而一体地形成,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以通过其他工艺来形成至少一个主体部分21a和至少一个台阶状部分21b、21c。例如,当基板21由诸如金属的导电材料形成时,可以通过诸如冲压工艺来形成至少一个主体部分21a和至少一个台阶状部分21b、21c;当基板21由诸如树脂的绝缘材料形成时,可以通过诸如注入成型工艺来形成包括至少一个主体部分21a和至少一个台阶状部分21b、21c的基板21。For example, when the substrate 21 is formed of a semiconductor material, at least one body portion 21a and at least one stepped portion 21b, 21c may be integrally formed through an etching process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, at least one body portion 21a and at least one stepped portion 21b, 21c may be formed by other processes. For example, when the substrate 21 is formed of a conductive material such as metal, at least one body portion 21a and at least one stepped portion 21b, 21c may be formed by a process such as punching; when the substrate 21 is formed of an insulating material such as resin, it may be formed by The base plate 21 comprising at least one body portion 21a and at least one stepped portion 21b, 21c is formed by a process such as injection molding.

布线图案22可以形成在基板21(例如,基板21的上表面和/或下表面)上。例如,布线图案22可以形成在基板21的至少一个主体部分21a和至少一个台阶状部分21b、21c上。如图2中所示,布线图案22可以包括形成在至少一个主体部分21a上的至少一部分22a和形成在至少一个台阶状部分21b、21c上的至少一部分22b、22c。可以由诸如金属的导电材料通过各种工艺在基板21上形成布线图案22。例如,可以由诸如金属的导电材料通过沉积工艺和/或镀覆工艺形成布线图案22,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺来形成布线图案22。例如,当基板21由半导体材料形成时,可以诸如通过掺杂工艺来形成布线图案22。在本发明的至少一个其他的示例性实施例中,当基板21由诸如金属的导电材料形成时,可以在如上所述的形成在基板21上的介电层上形成布线图案22。The wiring pattern 22 may be formed on the substrate 21 (eg, an upper surface and/or a lower surface of the substrate 21 ). For example, the wiring pattern 22 may be formed on at least one body portion 21 a and at least one stepped portion 21 b, 21 c of the substrate 21 . As shown in FIG. 2 , the wiring pattern 22 may include at least one portion 22a formed on at least one body portion 21a and at least one portion 22b, 22c formed on at least one stepped portion 21b, 21c. The wiring pattern 22 may be formed on the substrate 21 by various processes from a conductive material such as metal. For example, the wiring pattern 22 may be formed of a conductive material such as metal through a deposition process and/or a plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 22 as required. For example, when the substrate 21 is formed of a semiconductor material, the wiring pattern 22 may be formed such as by a doping process. In at least one other exemplary embodiment of the present invention, when the substrate 21 is formed of a conductive material such as metal, the wiring pattern 22 may be formed on a dielectric layer formed on the substrate 21 as described above.

多个半导体芯片23可以堆叠并附着在基板21上(例如,堆叠并附着在基板21的上表面上),并分别电连接到布线图案22。例如,多个半导体芯片23可以堆叠在基板21的至少一个主体部分21a和至少一个台阶状部分21b上。如图2中所示,多个半导体图案23可以包括:至少一个半导体芯片13a,设置在至少一个主体部分21a上并电连接到布线图案22的设置在至少一个主体部分21a上的至少一部分12a;至少一个半导体芯片13b,所述至少一个半导体芯片13b的至少一部分可以设置在至少一个台阶状部分21b上并电连接到布线图案22的设置在至少一个台阶状部分21b上的至少一部分22b。此外,所述至少一个半导体芯片23b的至少另一部分可以堆叠地设置在半导体芯片23a上。虽然在图1中仅示出了一个设置在至少一个主体部分21a上的半导体芯片23a和一个堆叠在半导体芯片23a上的半导体芯片23b,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,封装件20可以包括多个设置在至少一个主体部分21a上的半导体芯片23a和多个堆叠在所述多个半导体芯片23a中的至少一个半导体芯片23a上的半导体芯片,其中,所述多个堆叠在半导体芯片23a上的半导体芯片中的至少一个半导体芯片可以包括设置在至少一个台阶状部分上并电连接到布线图案22的设置在至少一个台阶状部分21b上的至少一部分22b的至少一部分。A plurality of semiconductor chips 23 may be stacked and attached on the substrate 21 (eg, stacked and attached on the upper surface of the substrate 21 ), and electrically connected to the wiring patterns 22 , respectively. For example, a plurality of semiconductor chips 23 may be stacked on at least one body portion 21 a and at least one stepped portion 21 b of the substrate 21 . As shown in FIG. 2, the plurality of semiconductor patterns 23 may include: at least one semiconductor chip 13a disposed on at least one body portion 21a and electrically connected to at least a portion 12a of the wiring pattern 22 disposed on at least one body portion 21a; At least one semiconductor chip 13b, at least a portion of which may be disposed on the at least one stepped portion 21b and electrically connected to at least a portion 22b of the wiring pattern 22 disposed on the at least one stepped portion 21b. Furthermore, at least another part of the at least one semiconductor chip 23b may be arranged stacked on the semiconductor chip 23a. Although only one semiconductor chip 23a disposed on at least one body portion 21a and one semiconductor chip 23b stacked on the semiconductor chip 23a are shown in FIG. 1, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the package 20 may include a plurality of semiconductor chips 23a disposed on at least one body portion 21a and a plurality of at least one semiconductor chip stacked in the plurality of semiconductor chips 23a. A semiconductor chip on the chip 23a, wherein at least one semiconductor chip among the plurality of semiconductor chips stacked on the semiconductor chip 23a may include at least one At least a portion of at least a portion 22b on the stepped portion 21b.

如图2中所示,多个半导体芯片23可以以倒装芯片的方式堆叠地安装在基板21上并电连接到布线图案22,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用诸如引线键合等各种安装方式来堆叠地安装多个半导体芯片23。As shown in FIG. 2 , a plurality of semiconductor chips 23 may be stack-mounted on the substrate 21 in a flip-chip manner and electrically connected to the wiring pattern 22 , however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 23 may be stacked and mounted by various mounting methods such as wire bonding as required.

包封材料层24可以形成在基板21(例如,基板21的上表面)上,以包封多个半导体芯片23。可以由诸如环氧树脂的包封材料通过注入成型工艺形成包封材料层24。An encapsulation material layer 24 may be formed on the substrate 21 (eg, the upper surface of the substrate 21 ) to encapsulate the plurality of semiconductor chips 23 . The encapsulation material layer 24 may be formed from an encapsulation material such as epoxy resin through an injection molding process.

根据本发明的一个示例性实施例,布线图案22的至少一部分22c可以暴露到封装件20的外部。图2中示出了布线图案22的形成在基板21的具有最大的高度的台阶状部分21c上的至少一部分22c暴露到封装件20的外部,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而暴露布线图案22的形成在基板21的其他部分上的至少一部分,例如,可以暴露布线图案22的形成在基板21的至少一个主体部分21a上的至少一部分。在这样的情况下,可以通过注入成型等工艺来在基板21上选择性地形成包封材料层24,以包封多个半导体芯片23并暴露布线图案22的至少一部分。According to an exemplary embodiment of the present invention, at least a portion 22c of the wiring pattern 22 may be exposed to the outside of the package 20 . 2 shows that at least a portion 22c of the wiring pattern 22 formed on the stepped portion 21c having the largest height of the substrate 21 is exposed to the outside of the package 20, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, at least a part of the wiring pattern 22 formed on other parts of the substrate 21 may be exposed as required, for example, at least one portion of the wiring pattern 22 formed on the substrate 21 may be exposed. At least a portion of the body portion 21a. In this case, the encapsulation material layer 24 may be selectively formed on the substrate 21 through injection molding or the like to encapsulate the plurality of semiconductor chips 23 and expose at least a portion of the wiring pattern 22 .

如图2中所示,封装件20还可以包括连接件26。连接件26可以设置在布线图案22的暴露的至少一部分22c上,并电连接到布线图案22的暴露的至少一部分22c上,以将多个半导体芯片23中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。连接件26可以为焊球,如图2中所示。在这样的情况下,封装件20还可以包括形成在布线图案22的暴露的至少一部分22c上的用于设置焊球26的焊盘,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接件26设置为连接凸起(bump)、引脚(pin)等。As shown in FIG. 2 , package 20 may also include connectors 26 . The connection member 26 may be provided on the exposed at least a portion 22c of the wiring pattern 22 and electrically connected to the exposed at least a portion 22c of the wiring pattern 22 to electrically connect at least one of the plurality of semiconductor chips 23 to the outside ( For example, a printed circuit board (PCB). Connectors 26 may be solder balls, as shown in FIG. 2 . In this case, the package 20 may further include a pad for disposing the solder ball 26 formed on the exposed at least a portion 22c of the wiring pattern 22, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the connecting member 26 can be configured as a connecting bump, a pin, etc. as required.

根据本发明的一个示例性实施例,封装件20还可以包括形成在包封材料层24的上表面上的另一布线图案27。与布线图案22相同,布线图案27可以由诸如金属的导电材料通过各种工艺形成在包封材料层24上。例如,可以由金属通过沉积和/或镀覆工艺形成布线图案22,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺形成布线图案27。虽然在图中没有示出,但是布线图案27可以诸如通过电连接到布线图案22的暴露的至少一部分22c而电连接到多个芯片23中的至少一个芯片23。According to an exemplary embodiment of the present invention, the package 20 may further include another wiring pattern 27 formed on the upper surface of the encapsulation material layer 24 . Like the wiring pattern 22 , the wiring pattern 27 may be formed of a conductive material such as metal on the encapsulation material layer 24 through various processes. For example, the wiring pattern 22 may be formed of metal through a deposition and/or plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 27 as required. Although not shown in the drawing, the wiring pattern 27 may be electrically connected to at least one chip 23 of the plurality of chips 23 , such as by being electrically connected to the exposed at least a portion 22 c of the wiring pattern 22 .

在封装件20包括形成在包封材料层24的上表面(即,封装件20的上表面)上的布线图案27的情况下,也可以将连接件26设置在布线图案27上,以将多个半导体芯片23中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。如上所述,当连接件26为焊球时,封装件20可以包括形成在布线图案27上的用于设置焊球26的焊盘。In the case that the package 20 includes a wiring pattern 27 formed on the upper surface of the encapsulation material layer 24 (that is, the upper surface of the package 20), the connector 26 may also be provided on the wiring pattern 27 so that multiple At least one of the semiconductor chips 23 is electrically connected to the outside (for example, a printed circuit board (PCB)). As described above, when the connection member 26 is a solder ball, the package 20 may include a pad for disposing the solder ball 26 formed on the wiring pattern 27 .

虽然没有示出,但是根据本发明的一个示例性实施例,封装件20还可以包括如上面参照图1示出的本发明的示例性实施的通孔(未示出)。与上面描述的通孔15相同,根据本发明的一个示例性实施例的通孔可以形成在基板21中,并电连接到布线图案22。在这样的情况下,通孔可以为导电通孔。例如,可以诸如通过蚀刻工艺来在基板21中形成过孔并在过孔中镀覆或填充导电材料,以形成导电的通孔。Although not shown, according to an exemplary embodiment of the present invention, the package 20 may further include through holes (not shown) as in the exemplary implementation of the present invention shown above with reference to FIG. 1 . Like the via hole 15 described above, a via hole according to an exemplary embodiment of the present invention may be formed in the substrate 21 and electrically connected to the wiring pattern 22 . In such cases, the vias may be conductive vias. For example, vias may be formed in the substrate 21 such as by an etching process and plated or filled with a conductive material in the vias to form conductive vias.

在封装件20进一步包括形成在基板21中的通孔的情况下,封装件20还可以包括设置在基板21的下表面上的连接件(未示出)。例如,可以将连接件设置在形成在基板21的下表面上的布线图案22上,和/或可以将连接件设置为与通孔对应(例如,设置在通孔上或周围)。连接件26可以被通孔电连接到布线图案22,从而将多个半导体芯片23中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。如上所述,当连接件26为焊球时,封装件20还可以包括形成在基板21的下表面上的布线图案22和/或通孔上或周围的用于设置焊球26的焊盘,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接件设置为连接凸起(bump)、引脚(pin)等。In case the package 20 further includes a through hole formed in the substrate 21 , the package 20 may also include a connector (not shown) provided on the lower surface of the substrate 21 . For example, the connectors may be provided on the wiring pattern 22 formed on the lower surface of the substrate 21, and/or the connectors may be provided corresponding to (eg, on or around) the through holes. The connector 26 may be electrically connected to the wiring pattern 22 by a via hole, thereby electrically connecting at least one semiconductor chip among the plurality of semiconductor chips 23 to the outside (eg, a printed circuit board (PCB)). As mentioned above, when the connector 26 is a solder ball, the package 20 may also include a pad for setting the solder ball 26 on or around the wiring pattern 22 and/or the through hole formed on the lower surface of the substrate 21, However, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the connecting member can be configured as a connecting bump, a pin, etc. as required.

即,根据本发明的示例性实施例,可以根据需要而将布线图案的一部分暴露到封装件的外部和/或在基板中形成的通孔。在这样的情况下,可以在封装件的下表面(即,基板的下表面)和/或封装件的上表面(即,包封材料层的上表面)上设置连接件26。That is, according to exemplary embodiments of the present invention, a part of the wiring pattern may be exposed to the outside of the package and/or the through hole formed in the substrate as needed. In such cases, connectors 26 may be provided on the lower surface of the package (ie, the lower surface of the substrate) and/or the upper surface of the package (ie, the upper surface of the encapsulation material layer).

在参照图2描述的根据本发明示例性实施例的封装件20中,可以采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板(PCB)。可以采用镀覆导电材料或掺杂等工艺来在由半导体材料形成的基板上形成布线图案。因此,简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。In the package 20 according to the exemplary embodiment of the present invention described with reference to FIG. 2 , a semiconductor material may be used to form a substrate for mounting chips instead of a printed circuit board (PCB) in the related art. A process such as plating a conductive material or doping may be used to form a wiring pattern on a substrate formed of a semiconductor material. Therefore, the manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, the electrical performance of the package is improved, and the stacked chip package can be realized at the wafer level.

在参照图2描述的根据本发明示例性实施例的封装件20中,可以将形成在基板上的布线图案的至少一部分暴露到所述封装件的外部,并可以在布线图案的暴露的至少一部分上设置连接件,从而简化了封装件的结构,降低了封装件的制造成本,提高了封装件的电性能。In the package 20 according to the exemplary embodiment of the present invention described with reference to FIG. Connectors are arranged on the package, thereby simplifying the structure of the package, reducing the manufacturing cost of the package, and improving the electrical performance of the package.

在参照图2描述的根据本发明示例性实施例的封装件20中,可以在包封材料层上设置电连接到布线图案的暴露的至少一部分的另一布线图案,并在所述另一布线图案上设置连接件,从而提高了连接件(例如,焊球)的设置空间,简化了制造工艺,例如,降低了植球工艺的难度。In the package 20 according to the exemplary embodiment of the present invention described with reference to FIG. 2 , another wiring pattern electrically connected to at least a part of the exposed wiring pattern may be provided on the encapsulation material layer, and the other wiring pattern The connecting parts are arranged on the pattern, so as to increase the installation space of the connecting parts (for example, solder balls), simplify the manufacturing process, for example, reduce the difficulty of the ball planting process.

在参照图2描述的根据本发明示例性实施例的封装件20中,还可以采用诸如蚀刻的方式在基板中形成用于电连接的通孔,因此,与制造印刷电路板(PCB)的工艺相比,进一步降低了制造成本,且能够以晶片级别来实现堆叠芯片式封装件。In the package 20 according to the exemplary embodiment of the present invention described with reference to FIG. 2, through holes for electrical connection can also be formed in the substrate by means such as etching, therefore, it is different from the process of manufacturing a printed circuit board (PCB). Compared with the present invention, the manufacturing cost is further reduced, and the stacked chip package can be realized at the wafer level.

下面将参照图3A至图3F来详细描述根据本发明的示例性实施例的制造封装件的方法。图3A至图3F是示出了根据本发明的示例性实施例的制造如图1中所示的封装件10的方法的剖视图,为了简明起见,采用相同的标号指示与图1中的元件相同的元件,并将省略对它们的详细描述。A method of manufacturing a package according to an exemplary embodiment of the present invention will be described in detail below with reference to FIGS. 3A to 3F . 3A to 3F are cross-sectional views illustrating a method of manufacturing the package 10 shown in FIG. 1 according to an exemplary embodiment of the present invention. For the sake of simplicity, the same reference numerals are used to indicate the same elements as those in FIG. 1 components, and their detailed descriptions will be omitted.

如图3A中所示,可以预先制备准基板11’。准基板11’可以包含半导体材料。接下来,如图3B所示,可以通过蚀刻准基板11’而一体地形成包括至少一个主体部分11a和至少一个台阶状部分11b、11c的基板11。虽然在图3B中仅示出了将基板11形成为包括一个主体部分11a和两个台阶状部分11b、11c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而形成包括多个主体部分和一个或两个以上的台阶状部分的基板11。As shown in Fig. 3A, a quasi-substrate 11' may be prepared in advance. The quasi-substrate 11' may comprise a semiconductor material. Next, as shown in FIG. 3B , the substrate 11 including at least one body portion 11a and at least one stepped portion 11b, 11c may be integrally formed by etching the quasi-substrate 11'. Although it is only shown in FIG. 3B that the substrate 11 is formed to include one body portion 11a and two stepped portions 11b, 11c, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 11 including a plurality of main body parts and one or more than two stepped parts may be formed as required.

可以将至少一个主体部分11a和至少一个台阶状部分11b、11c形成为具有不同的高度。例如,可以将主体部分11a形成为具有最小的高度,可以将台阶状部分11c形成为具有最大的高度,可以将台阶状部分11b形成为具有大于主体部分11a的高度并小于台阶状部分11c的高度的高度。如此,可以在基板11的上表面上形成具有不同高度的台阶形状。在本发明的至少一个其他的示例性实施例中,至少一个主体部分和至少一个台阶状部分中相邻的两个部分的高度差根据将要安装的半导体芯片的厚度来确定。At least one body portion 11a and at least one stepped portion 11b, 11c may be formed to have different heights. For example, the body portion 11a may be formed to have the smallest height, the stepped portion 11c may be formed to have the largest height, and the stepped portion 11b may be formed to have a height greater than that of the body portion 11a and smaller than that of the stepped portion 11c. the height of. In this way, step shapes having different heights can be formed on the upper surface of the substrate 11 . In at least one other exemplary embodiment of the present invention, a height difference between two adjacent parts of the at least one body part and the at least one stepped part is determined according to the thickness of the semiconductor chip to be mounted.

在本发明的至少一个其他的示例性实施例中,可以根据需要而由其他的半导体材料、绝缘材料和/或导电材料来形成基板11。例如,当由诸如金属的导电材料形成准基板11’时,可以通过诸如冲压工艺来形成包括至少一个主体部分11a和至少一个台阶状部分11b、11c的基板11。当由导电材料(例如,金属)形成基板11时,可以根据需要而在由金属形成的基板11的整个表面或一部分表面上形成介电层,以提供良好的绝缘特性。此外,可以由诸如树脂的绝缘材料通过诸如注入成型工艺来形成包括至少一个主体部分11a和至少一个台阶状部分11b、11c的基板11。In at least one other exemplary embodiment of the present invention, the substrate 11 may be formed of other semiconductor materials, insulating materials and/or conductive materials as required. For example, when the quasi-substrate 11' is formed of a conductive material such as metal, the substrate 11 including at least one body portion 11a and at least one stepped portion 11b, 11c may be formed by a process such as punching. When the substrate 11 is formed of a conductive material such as metal, a dielectric layer may be formed on the entire surface or a part of the surface of the substrate 11 formed of the metal as necessary to provide good insulating properties. In addition, the substrate 11 including at least one main body portion 11a and at least one stepped portion 11b, 11c may be formed from an insulating material such as resin through a process such as injection molding.

如图3C中所示,可以在基板11(例如,基板11的上表面和/或下表面)上形成布线图案12。例如,可以将布线图案12形成为包括形成在至少一个主体部分11a上的至少一部分12a和形成在至少一个台阶状部分11b、11c上的至少一部分12b、12c。可以在基板11上由诸如金属的导电材料通过各种工艺来形成布线图案12。例如,可以由金属通过沉积工艺和/或镀覆工艺形成布线图案12,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺来形成布线图案12。例如,当由半导体材料形成基板11时,可以通过掺杂工艺来形成布线图案12。在本发明的至少一个其他的示例性实施例中,当由诸如金属的导电材料形成基板11时,可以在如上所述的形成在基板11上的介电层上形成布线图案12。As shown in FIG. 3C , a wiring pattern 12 may be formed on a substrate 11 (eg, an upper surface and/or a lower surface of the substrate 11 ). For example, the wiring pattern 12 may be formed to include at least one portion 12a formed on at least one body portion 11a and at least one portion 12b, 12c formed on at least one stepped portion 11b, 11c. The wiring pattern 12 may be formed on the substrate 11 from a conductive material such as metal through various processes. For example, the wiring pattern 12 may be formed of metal through a deposition process and/or a plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 12 as required. For example, when the substrate 11 is formed of a semiconductor material, the wiring pattern 12 may be formed through a doping process. In at least one other exemplary embodiment of the present invention, when the substrate 11 is formed of a conductive material such as metal, the wiring pattern 12 may be formed on a dielectric layer formed on the substrate 11 as described above.

根据本发明的一个示例性实施例,可以在基板11中形成电连接到布线图案12的通孔15,如图3C中所示。在这样的情况下,通孔15可以为导电通孔。例如,可以诸如通过蚀刻工艺来在基板11中形成过孔并在过孔中镀覆或填充导电材料,以形成导电的通孔15。According to an exemplary embodiment of the present invention, a via hole 15 electrically connected to the wiring pattern 12 may be formed in the substrate 11, as shown in FIG. 3C. In such a case, the via 15 may be a conductive via. For example, vias may be formed in the substrate 11 such as by an etching process and plated or filled with a conductive material in the vias to form the conductive vias 15 .

此时,还可以形成用于设置焊球的焊盘。例如,可以在形成在基板11的上表面和/或下表面上的布线图案12和/或通孔15上或周围,通过诸如镀覆工艺来形成焊盘。然而,实施例不限于此。可以在后面将要详细描述的形成包封材料层的包封工艺之后在形成在基板11的下表面和/或通孔15上或周围形成焊盘。At this time, pads for disposing solder balls may also be formed. For example, pads may be formed on or around the wiring pattern 12 and/or the through hole 15 formed on the upper surface and/or lower surface of the substrate 11 through a process such as plating. However, embodiments are not limited thereto. The pads may be formed on or around the lower surface of the substrate 11 and/or the through hole 15 after an encapsulation process of forming an encapsulation material layer which will be described in detail later.

然后,如图3D中所示,可以在基板11上(例如,基板11的上表面上)堆叠并附着多个半导体芯片13,并分别将堆叠的多个半导体芯片13电连接到布线图案12。例如,可以在基板11的至少一个主体部分11a和至少一个台阶状部分11b上堆叠半导体芯片13。如图3D中所示,可以将至少一个半导体芯片13a设置在至少一个主体部分11a上并电连接到布线图案12的设置在至少一个主体部分11a上的至少一部分12a,可以将至少一个半导体芯片13b、13c中的半导体芯片13b的至少一部分设置在至少一个台阶状部分11b上并电连接到布线图案12的设置在至少一个台阶状部分11b上的至少一部分12b,并可以将至少一个半导体芯片13b、13c中的半导体芯片13c的至少一部分设置在至少一个台阶状部分11c上并电连接到布线图案12的设置在至少一个台阶状部分11c上的至少一部分12c。此外,可以将半导体芯片13b的至少另一部分堆叠地设置在半导体芯片13a上,可以将半导体芯片13c的至少另一部分堆叠地设置在半导体芯片13b上。虽然在图3D中仅示出了一个设置在至少一个主体部分11a上的半导体芯片13a和两个堆叠在半导体芯片13a上的半导体芯片13b和13c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而在至少一个主体部分11a上设置多个半导体芯片13a并在所述多个半导体芯片13a中的至少一个半导体芯片上堆叠一个或两个以上的半导体芯片,其中,可以将所述一个或两个以上的堆叠在半导体芯片13a上的半导体芯片中的至少一个半导体芯片的至少一部分设置在至少一个台阶状部分上并电连接到布线图案12的设置在所述至少一个台阶状部分上的至少一部分。Then, as shown in FIG. 3D , a plurality of semiconductor chips 13 may be stacked and attached on the substrate 11 (eg, on the upper surface of the substrate 11 ) and electrically connected to the wiring patterns 12 respectively. For example, the semiconductor chip 13 may be stacked on at least one body portion 11 a and at least one stepped portion 11 b of the substrate 11 . As shown in FIG. 3D, at least one semiconductor chip 13a may be disposed on at least one main body portion 11a and electrically connected to at least a portion 12a of wiring pattern 12 disposed on at least one main body portion 11a, and at least one semiconductor chip 13b may be disposed on at least one main body portion 11a. At least a part of the semiconductor chip 13b in 13c is disposed on at least one stepped portion 11b and is electrically connected to at least a portion 12b of the wiring pattern 12 disposed on the at least one stepped portion 11b, and at least one semiconductor chip 13b, At least a part of the semiconductor chip 13c in 13c is disposed on at least one stepped portion 11c and is electrically connected to at least a portion 12c of the wiring pattern 12 disposed on the at least one stepped portion 11c. Furthermore, at least another part of the semiconductor chip 13b may be stacked on the semiconductor chip 13a, and at least another part of the semiconductor chip 13c may be stacked on the semiconductor chip 13b. Although only one semiconductor chip 13a disposed on at least one body portion 11a and two semiconductor chips 13b and 13c stacked on the semiconductor chip 13a are shown in FIG. 3D , exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 13a may be provided on at least one main body portion 11a as required, and one or more semiconductor chips may be stacked on at least one of the plurality of semiconductor chips 13a. Two or more semiconductor chips, wherein at least a part of at least one semiconductor chip of the one or more semiconductor chips stacked on the semiconductor chip 13a can be provided on at least one stepped portion and electrically connected to the wiring At least a part of the pattern 12 is disposed on the at least one stepped portion.

在图3D中示出的本发明的示例性实施例中,可以以倒装芯片的方式将多个半导体芯片13堆叠地安装在基板11上并电连接到布线图案12,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用诸如引线键合等各种安装方式来堆叠地安装多个半导体芯片13。In the exemplary embodiment of the present invention shown in FIG. 3D, a plurality of semiconductor chips 13 may be stacked and mounted on the substrate 11 in a flip-chip manner and electrically connected to the wiring pattern 12, however, the exemplary embodiment of the present invention Exemplary embodiments are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 13 may be stacked and mounted by various mounting methods such as wire bonding as required.

之后,如图3E中所示,可以在基板11(例如,基板11的上表面)上形成包封材料层14,以包封多个半导体芯片13。可以由诸如环氧树脂的包封材料通过注入成型工艺来形成包封材料层14。Afterwards, as shown in FIG. 3E , an encapsulation material layer 14 may be formed on the substrate 11 (eg, the upper surface of the substrate 11 ) to encapsulate the plurality of semiconductor chips 13 . The encapsulation material layer 14 may be formed from an encapsulation material such as epoxy resin through an injection molding process.

接下来,如图3F中所示,还可以在基板11的下表面上设置连接件16。例如,可以在形成在基板11的下表面上的布线图案12上设置连接件16。此外,还可以将连接件16设置为与通孔16对应(例如,设置在通孔16上或周围)。连接件16可以被通孔15电连接到布线图案12,从而将多个半导体芯片13中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。连接件16可以为焊球,如图3F中所示。在这样的情况下,可以如上所述地在基板11的下表面上的布线图案12和/或通孔16上或周围形成焊盘,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接凸起(bump)、引脚(pin)等作为连接件16。Next, as shown in FIG. 3F , connectors 16 may also be provided on the lower surface of the substrate 11 . For example, the connectors 16 may be provided on the wiring pattern 12 formed on the lower surface of the substrate 11 . In addition, the connecting piece 16 can also be arranged to correspond to the through hole 16 (for example, arranged on or around the through hole 16 ). The connector 16 may be electrically connected to the wiring pattern 12 by the via hole 15, thereby electrically connecting at least one semiconductor chip among the plurality of semiconductor chips 13 to the outside (eg, a printed circuit board (PCB)). Connectors 16 may be solder balls, as shown in FIG. 3F . In this case, pads may be formed on or around the wiring pattern 12 and/or the via hole 16 on the lower surface of the substrate 11 as described above, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, connection bumps (bumps), pins (pins) and the like can be used as the connection parts 16 as required.

在参照图3A-图3F描述的根据本发明示例性实施例的制造封装件的方法中,可以采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板(PCB)。可以采用镀覆导电材料或掺杂等工艺来在由半导体材料形成的基板上形成布线图案,并可以采用诸如蚀刻的方式在基板中形成用于电连接的通孔。因此,简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。In the method of manufacturing a package according to an exemplary embodiment of the present invention described with reference to FIGS. 3A-3F , a semiconductor material can be used to form a substrate for mounting a chip instead of a printed circuit board (PCB) in the prior art. ). A process such as plating a conductive material or doping may be used to form a wiring pattern on a substrate formed of a semiconductor material, and a method such as etching may be used to form a through hole for electrical connection in the substrate. Therefore, the manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, the electrical performance of the package is improved, and the stacked chip package can be realized at the wafer level.

下面将参照图4A至图4G来详细描述根据本发明的另一示例性实施例的制造如封装件的方法。图4A至图4G是示出了根据本发明的另一示例性实施例的制造如图2中所示的封装件20的方法的剖视图,为了简明起见,采用相同的标号指示与图2中的元件相同的元件,并将省略对它们的详细描述。A method of manufacturing a package according to another exemplary embodiment of the present invention will be described in detail below with reference to FIGS. 4A to 4G . 4A to 4G are cross-sectional views showing a method of manufacturing the package 20 shown in FIG. 2 according to another exemplary embodiment of the present invention. elements are the same, and their detailed descriptions will be omitted.

如图4A中所示,可以预先制备准基板21’。准基板21’可以包含半导体材料。接下来,如图4B所示,可以通过蚀刻准基板21’而一体地形成包括至少一个主体部分21a和至少一个台阶状部分21b、21c的基板21。虽然在图4B中仅示出了将基板21形成为包括一个主体部分21a和两个台阶状部分21b、21c,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而形成包括多个主体部分和一个或两个以上的台阶状部分的基板21。As shown in Fig. 4A, a quasi-substrate 21' may be prepared in advance. The quasi-substrate 21' may comprise a semiconductor material. Next, as shown in FIG. 4B , the substrate 21 including at least one body portion 21a and at least one stepped portion 21b, 21c may be integrally formed by etching the quasi-substrate 21'. Although it is only shown in FIG. 4B that the substrate 21 is formed to include one body portion 21a and two stepped portions 21b, 21c, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the substrate 21 including a plurality of main body parts and one or more than two stepped parts may be formed as required.

可以将至少一个主体部分21a和至少一个台阶状部分21b、21c形成为具有不同的高度。例如,可以将主体部分21a形成为具有最小的高度,可以将台阶状部分21c形成为具有最大的高度,可以将台阶状部分21b形成为具有大于主体部分21a的高度并小于台阶状部分21c的高度的高度。如此,可以在基板21的上表面上形成具有不同高度的台阶形状。在本发明的至少一个其他的示例性实施例中,至少一个主体部分和至少一个台阶状部分中相邻的两个部分的高度差根据将要安装的半导体芯片的厚度来确定。At least one body portion 21a and at least one stepped portion 21b, 21c may be formed to have different heights. For example, the body portion 21a may be formed to have the smallest height, the stepped portion 21c may be formed to have the largest height, and the stepped portion 21b may be formed to have a height greater than that of the body portion 21a and smaller than that of the stepped portion 21c. the height of. In this manner, step shapes having different heights can be formed on the upper surface of the substrate 21 . In at least one other exemplary embodiment of the present invention, a height difference between two adjacent parts of the at least one body part and the at least one stepped part is determined according to the thickness of the semiconductor chip to be mounted.

在本发明的至少一个其他的示例性实施例中,可以根据需要而由其他的半导体材料、绝缘材料和/或导电材料来形成基板21。例如,当由诸如金属的导电材料形成准基板21’时,可以通过诸如冲压工艺来形成包括至少一个主体部分21a和至少一个台阶状部分21b、21c的基板21。当由导电材料(例如,金属)形成基板21时,可以根据需要而在由金属形成的基板21的整个表面或一部分表面上形成介电层,以提供良好的绝缘特性。此外,可以由诸如树脂的绝缘材料通过诸如注入成型工艺来形成包括至少一个主体部分21a和至少一个台阶状部分21b、21c的基板21。In at least one other exemplary embodiment of the present invention, the substrate 21 may be formed of other semiconductor materials, insulating materials and/or conductive materials as required. For example, when the quasi-substrate 21' is formed of a conductive material such as metal, the substrate 21 including at least one body portion 21a and at least one stepped portion 21b, 21c may be formed by a process such as punching. When the substrate 21 is formed of a conductive material such as metal, a dielectric layer may be formed on the entire surface or a part of the surface of the substrate 21 formed of the metal as needed to provide good insulating properties. In addition, the substrate 21 including at least one main body portion 21a and at least one stepped portion 21b, 21c may be formed from an insulating material such as resin through a process such as injection molding.

如图4C中所示,可以在基板21(例如,基板21的上表面和/或下表面)上形成布线图案22。例如,可以将布线图案22形成为包括形成在至少一个主体部分21a上的至少一部分22a和形成在至少一个台阶状部分21b、21c上的至少一部分22b、22c。可以在基板21上由诸如金属的导电材料通过各种工艺来形成布线图案22。例如,可以由金属通过沉积工艺和/或镀覆工艺形成布线图案22,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺来形成布线图案22。例如,当由半导体材料形成基板21时,可以通过掺杂工艺来形成布线图案22。在本发明的至少一个其他的示例性实施例中,当由诸如金属的导电材料形成基板21时,可以在如上所述的形成在基板21上的介电层上形成布线图案22。As shown in FIG. 4C , a wiring pattern 22 may be formed on a substrate 21 (eg, an upper surface and/or a lower surface of the substrate 21 ). For example, the wiring pattern 22 may be formed to include at least one portion 22a formed on at least one body portion 21a and at least one portion 22b, 22c formed on at least one stepped portion 21b, 21c. The wiring pattern 22 may be formed on the substrate 21 from a conductive material such as metal through various processes. For example, the wiring pattern 22 may be formed of metal through a deposition process and/or a plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 22 as required. For example, when the substrate 21 is formed of a semiconductor material, the wiring pattern 22 may be formed through a doping process. In at least one other exemplary embodiment of the present invention, when the substrate 21 is formed of a conductive material such as metal, the wiring pattern 22 may be formed on a dielectric layer formed on the substrate 21 as described above.

虽然没有示出,但是根据本发明的一个示例性实施例,与在图3C中示出的本发明的示例性实施例相同,可以在基板21中形成电连接到布线图案22的通孔。在这样的情况下,通孔可以为导电通孔。例如,可以诸如通过蚀刻工艺来在基板21中形成过孔并在过孔中镀覆或填充导电材料,以形成导电的通孔。Although not shown, according to an exemplary embodiment of the present invention, like the exemplary embodiment of the present invention shown in FIG. 3C , a via hole electrically connected to the wiring pattern 22 may be formed in the substrate 21 . In such cases, the vias may be conductive vias. For example, vias may be formed in the substrate 21 such as by an etching process and plated or filled with a conductive material in the vias to form conductive vias.

此时,还可以形成用于设置焊球的焊盘。例如,可以在形成在基板21的上表面和/或下表面上的布线图案22和/或通孔上或周围,通过诸如镀覆工艺来形成焊盘。然而,实施例不限于此。可以在后面将要详细描述的包封工艺之后并在设置作为焊球的连接件26之前,在形成在基板21的下表面上的布线图案22和/或通孔25上或周围成焊盘。At this time, pads for disposing solder balls may also be formed. For example, pads may be formed on or around the wiring patterns 22 and/or through holes formed on the upper and/or lower surfaces of the substrate 21 through a process such as plating. However, embodiments are not limited thereto. The pads may be formed on or around the wiring pattern 22 and/or the via hole 25 formed on the lower surface of the substrate 21 after an encapsulation process which will be described in detail later and before the connection member 26 as a solder ball is provided.

然后,如图4D中所示,可以在基板21上(例如,基板21的上表面上)堆叠并附着多个半导体芯片23,并分别将堆叠的多个半导体芯片23中的至少一个半导体芯片电连接到布线图案22。例如,可以在基板21的至少一个主体部分21a和至少一个台阶状部分21b上堆叠半导体芯片23。如图4D中所示,可以将至少一个半导体芯片23a设置在至少一个主体部分21a上并电连接到布线图案22的设置在至少一个主体部分21a上的至少一部分22a,并可以将至少一个半导体芯片23b的至少一部分设置在至少一个台阶状部分21b上并电连接到布线图案22的设置在至少一个台阶状部分21b上的至少一部分22b。此外,可以将半导体芯片23b的至少另一部分堆叠地设置在半导体芯片23a上。虽然在图4D中仅示出了一个设置在至少一个主体部分21a上的半导体芯片23a和一个堆叠在半导体芯片23a上的半导体芯片23b,但是本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而在至少一个主体部分21a上设置多个半导体芯片23a并在所述多个半导体芯片23a中的至少一个半导体芯片23a上堆叠多个半导体芯片,其中,可以将所述多个堆叠在半导体芯片13a上的半导体芯片中的至少一个半导体芯片的至少一部分设置在至少一个台阶状部分11b上并电连接到布线图案12的设置在至少一个台阶状部分11b上的至少一部分12b。Then, as shown in FIG. 4D, a plurality of semiconductor chips 23 may be stacked and attached on the substrate 21 (for example, on the upper surface of the substrate 21), and at least one semiconductor chip among the stacked plurality of semiconductor chips 23 may be electrically connected to each other. Connected to the wiring pattern 22 . For example, the semiconductor chip 23 may be stacked on at least one body portion 21 a and at least one stepped portion 21 b of the substrate 21 . As shown in FIG. 4D, at least one semiconductor chip 23a may be disposed on at least one main body portion 21a and electrically connected to at least a portion 22a of wiring pattern 22 disposed on at least one main body portion 21a, and at least one semiconductor chip may be disposed on at least one main body portion 21a. At least a part of 23b is disposed on at least one stepped portion 21b and is electrically connected to at least a portion 22b of the wiring pattern 22 disposed on at least one stepped portion 21b. Furthermore, at least another part of the semiconductor chip 23b may be stacked on the semiconductor chip 23a. Although only one semiconductor chip 23a disposed on at least one body portion 21a and one semiconductor chip 23b stacked on the semiconductor chip 23a are shown in FIG. 4D, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 23a may be provided on at least one main body portion 21a as required, and multiple semiconductor chips 23a may be stacked on at least one semiconductor chip 23a among the plurality of semiconductor chips 23a. semiconductor chips, wherein at least a part of at least one semiconductor chip among the plurality of semiconductor chips stacked on the semiconductor chips 13a can be disposed on at least one stepped portion 11b and electrically connected to the wiring pattern 12 disposed at least At least a portion 12b of a stepped portion 11b.

在图4D中示出的本发明的示例性实施例中,可以以倒装芯片的方式将多个半导体芯片23堆叠地安装在基板21上并电连接到布线图案22,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用诸如引线键合等各种安装方式来堆叠地安装多个半导体芯片23。In the exemplary embodiment of the present invention shown in FIG. 4D, a plurality of semiconductor chips 23 may be stacked and mounted on the substrate 21 in a flip-chip manner and electrically connected to the wiring pattern 22, however, the exemplary embodiment of the present invention Exemplary embodiments are not limited thereto. In at least one other exemplary embodiment of the present invention, a plurality of semiconductor chips 23 may be stacked and mounted by various mounting methods such as wire bonding as required.

之后,如图4E中所示,可以在基板21(例如,基板21的上表面)上形成包封材料层24,以包封多个半导体芯片23。可以由诸如环氧树脂的包封材料通过注入成型工艺来形成包封材料层24。Afterwards, as shown in FIG. 4E , an encapsulation material layer 24 may be formed on the substrate 21 (eg, the upper surface of the substrate 21 ) to encapsulate the plurality of semiconductor chips 23 . The encapsulation material layer 24 may be formed from an encapsulation material such as epoxy resin through an injection molding process.

根据本发明的一个示例性实施例,在形成包封材料层24的步骤中,可以将布线图案22的至少一部分22c暴露到封装件20的外部。图4E中示出了可以将布线图案22的形成在基板21的具有最大的高度的台阶状部分21c上的至少一部分22c暴露到封装件20的外部,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而暴露布线图案22的形成在基板21的其他部分上的至少一部分。例如,可以暴露布线图案22的形成在基板21的至少一个主体部分21a上的至少一部分。在这样的情况下,可以通过注入成型等工艺来在基板21上选择性地形成包封材料层24,以包封多个半导体芯片23并暴露布线图案22的至少一部分。According to an exemplary embodiment of the present invention, at least a portion 22c of the wiring pattern 22 may be exposed to the outside of the package 20 in the step of forming the encapsulation material layer 24 . 4E shows that at least a portion 22c of the wiring pattern 22 formed on the stepped portion 21c having the largest height of the substrate 21 may be exposed to the outside of the package 20, however, exemplary embodiments of the present invention are not limited to this. In at least one other exemplary embodiment of the present invention, at least a portion of the wiring pattern 22 formed on other portions of the substrate 21 may be exposed as needed. For example, at least a portion of the wiring pattern 22 formed on at least one body portion 21 a of the substrate 21 may be exposed. In this case, the encapsulation material layer 24 may be selectively formed on the substrate 21 through injection molding or the like to encapsulate the plurality of semiconductor chips 23 and expose at least a portion of the wiring pattern 22 .

根据本发明的一个示例性实施例,还可以在包封材料层24的上表面上形成另一布线图案27,如图4F中所示。与布线图案22相同,可以由诸如金属的导电材料通过各种工艺在包封材料层24上形成布线图案27。例如,可以由金属通过沉积和/或镀覆工艺来形成布线图案27,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而采用其他的导电材料和/或其他的工艺来形成布线图案27。虽然在图中没有示出,但是可以诸如通过电连接到布线图案22的暴露到封装件20的外部的至少一部分22c而将布线图案27电连接到多个芯片23。According to an exemplary embodiment of the present invention, another wiring pattern 27 may also be formed on the upper surface of the encapsulation material layer 24, as shown in FIG. 4F. Like the wiring pattern 22 , the wiring pattern 27 may be formed on the encapsulation material layer 24 by various processes from a conductive material such as metal. For example, the wiring pattern 27 may be formed of metal through a deposition and/or plating process, however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, other conductive materials and/or other processes may be used to form the wiring pattern 27 as required. Although not shown in the drawing, the wiring pattern 27 may be electrically connected to the plurality of chips 23 such as by being electrically connected to at least a portion 22 c of the wiring pattern 22 exposed to the outside of the package 20 .

接下来,如图4G中所示,还可以在包封材料层24的上表面上设置连接件26。可以将连接件26设置在布线图案22的暴露到封装件20的外部的至少一部分22c上,并将其电连接到布线图案22的暴露到封装件20的外部的至少一部分22c上,以将多个半导体芯片23中的至少一个半导体芯片23电连接到外部(例如,印刷电路板(PCB))。连接件26可以为焊球,如图4G中所示。在这样的情况下,还可以在布线图案22的暴露到封装件20的外部的至少一部分22c上形成用于设置焊球26的焊盘,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接件26设置为连接凸起(bump)、引脚(pin)等。Next, as shown in FIG. 4G , connectors 26 may also be provided on the upper surface of the encapsulation material layer 24 . The connector 26 may be provided on at least a portion 22c of the wiring pattern 22 exposed to the outside of the package 20 and electrically connected to at least a portion 22c of the wiring pattern 22 exposed to the outside of the package 20, so as to connect multiple At least one semiconductor chip 23 among the semiconductor chips 23 is electrically connected to the outside (for example, a printed circuit board (PCB)). Connectors 26 may be solder balls, as shown in FIG. 4G. In this case, pads for disposing solder balls 26 may also be formed on at least a portion 22 c of the wiring pattern 22 exposed to the outside of the package 20 , however, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the connecting member 26 can be configured as a connecting bump, a pin, etc. as required.

在如图4F所示地在包封材料层24的上表面(即,封装件20的上表面)上形成布线图案27的情况下,也可以将连接件26设置在布线图案27上,以将多个半导体芯片23中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。如上所述,当连接件26为焊球时,也可以在布线图案27上形成用于设置焊球26的焊盘。In the case where the wiring pattern 27 is formed on the upper surface of the encapsulation material layer 24 (that is, the upper surface of the package 20) as shown in FIG. At least one of the plurality of semiconductor chips 23 is electrically connected to the outside (for example, a printed circuit board (PCB)). As described above, when the connection member 26 is a solder ball, a pad for disposing the solder ball 26 may also be formed on the wiring pattern 27 .

虽然没有示出,但是根据本发明的一个其他的示例性实施例,在如上所述地在基板21中形成通孔的情况下,可以在基板21的下表面上设置连接件(未示出)。例如,可以将连接件设置在形成在基板21的下表面上的布线图案22上,和/或可以将连接件设置为与通孔对应(例如,设置在通孔上或周围)。连接件26可以被通孔电连接到布线图案22,从而将多个半导体芯片23中的至少一个半导体芯片电连接到外部(例如,印刷电路板(PCB))。如上所述,当连接件26为焊球时,封装件20还可以包括形成在基板21的下表面上的布线图案22和/或通孔上或周围的用于设置焊球26的焊盘,然而,本发明的示例性实施例不限于此。在本发明的至少一个其他的示例性实施例中,可以根据需要而将连接件设置为连接凸起(bump)、引脚(pin)等。Although not shown, according to one other exemplary embodiment of the present invention, in the case of forming the through hole in the substrate 21 as described above, a connecting member (not shown) may be provided on the lower surface of the substrate 21. . For example, the connectors may be provided on the wiring pattern 22 formed on the lower surface of the substrate 21, and/or the connectors may be provided corresponding to (eg, on or around) the through holes. The connector 26 may be electrically connected to the wiring pattern 22 by a via hole, thereby electrically connecting at least one semiconductor chip among the plurality of semiconductor chips 23 to the outside (eg, a printed circuit board (PCB)). As mentioned above, when the connector 26 is a solder ball, the package 20 may also include a pad for setting the solder ball 26 on or around the wiring pattern 22 and/or the through hole formed on the lower surface of the substrate 21, However, exemplary embodiments of the present invention are not limited thereto. In at least one other exemplary embodiment of the present invention, the connecting member can be configured as a connecting bump, a pin, etc. as required.

即,根据本发明的示例性实施例,可以根据需要而在封装件中设置形成在基板中的通孔和/或将布线图案的一部分暴露到封装件的外部。在这样的情况下,可以在封装件的下表面(即,基板的下表面)和/或封装件的上表面(即,包封材料层的上表面)上设置连接件26。That is, according to an exemplary embodiment of the present invention, a via hole formed in a substrate and/or exposing a part of a wiring pattern to the outside of the package may be provided in the package as needed. In such cases, connectors 26 may be provided on the lower surface of the package (ie, the lower surface of the substrate) and/or the upper surface of the package (ie, the upper surface of the encapsulation material layer).

在参照图4A-图4G描述的根据本发明示例性实施例的制造封装件的方法中,可以采用半导体材料来形成作为用于安装芯片的基板,以代替现有技术中的印刷电路板(PCB)。可以采用镀覆导电材料或掺杂等工艺来在由半导体材料形成的基板上形成布线图案。因此,简化了封装件的制造工艺,降低了封装件的制造成本,提高了封装件的电性能,并能够以晶片级别来实现堆叠芯片式封装件。In the method of manufacturing a package according to an exemplary embodiment of the present invention described with reference to FIGS. 4A-4G , a semiconductor material can be used to form a substrate for mounting a chip instead of a printed circuit board (PCB) in the prior art. ). A process such as plating a conductive material or doping may be used to form a wiring pattern on a substrate formed of a semiconductor material. Therefore, the manufacturing process of the package is simplified, the manufacturing cost of the package is reduced, the electrical performance of the package is improved, and the stacked chip package can be realized at the wafer level.

在参照图4A-图4G描述的根据本发明示例性实施例的制造封装件的方法中,可以将形成在基板上的布线图案的至少一部分暴露到所述封装件的外部,并可以在布线图案的暴露的至少一部分上设置连接件,从而简化了封装件的结构,降低了封装件的制造成本,提高了封装件的电性能。In the method of manufacturing a package according to an exemplary embodiment of the present invention described with reference to FIGS. 4A-4G , at least a part of a wiring pattern formed on a substrate may be exposed to the outside of the package, and may be formed in the wiring pattern. A connector is provided on at least a part of the exposed part, thereby simplifying the structure of the package, reducing the manufacturing cost of the package, and improving the electrical performance of the package.

在参照图4A-图4G描述的根据本发明示例性实施例的制造封装件的方法中,可以在包封材料层上设置电连接到布线图案的暴露的至少一部分的另一布线图案,并在所述另一布线图案上设置连接件,从而提高了连接件(例如,焊球)的设置空间,简化了制造工艺,例如,降低了植球工艺的难度。In the method of manufacturing a package according to an exemplary embodiment of the present invention described with reference to FIGS. The connection element is arranged on the other wiring pattern, thereby increasing the installation space of the connection element (for example, solder balls), and simplifying the manufacturing process, for example, reducing the difficulty of the ball planting process.

在参照图4A-图4G描述的根据本发明示例性实施例的制造封装件的方法中,还可以采用诸如蚀刻的方式在基板中形成用于电连接的通孔,因此,与制造印刷电路板(PCB)的工艺相比,进一步降低了制造成本,且能够以晶片级别来实现堆叠芯片式封装件。In the method of manufacturing a package according to an exemplary embodiment of the present invention described with reference to FIGS. Compared with the PCB (PCB) process, the manufacturing cost is further reduced, and the stacked chip package can be realized at the wafer level.

虽然已经示出并描述了本发明的示例性实施例的示例,但是本领域技术人员应该理解的是,本发明的示例性实施例不限于此,在不脱离如权利要求所限定的本发明的精神和范围的情况下,可以对本发明的示例性实施例进行各种修改。While examples of exemplary embodiments of the present invention have been shown and described, it should be understood by those skilled in the art that the exemplary embodiments of the present invention are not limited thereto without departing from the scope of the present invention as defined in the claims. Various modifications may be made to the exemplary embodiments of the invention within the spirit and scope of the invention.

Claims (20)

1.一种封装件,其特征在于所述封装件包括:1. A package, characterized in that the package comprises: 基板;Substrate; 布线图案,形成在基板上;a wiring pattern formed on the substrate; 多个半导体芯片,堆叠在基板的上表面上,并电连接到布线图案;a plurality of semiconductor chips stacked on the upper surface of the substrate and electrically connected to the wiring pattern; 包封材料层,形成在基板的上表面上,以包封所述多个半导体芯片,an encapsulation material layer formed on the upper surface of the substrate to encapsulate the plurality of semiconductor chips, 其中,基板包括至少一个主体部分和至少一个台阶状部分,所述多个半导体芯片中的至少一个半导体芯片的至少一部分设置在所述至少一个台阶状部分上并电连接到布线图案的设置在所述至少一个台阶状部分上的至少一部分。Wherein, the substrate includes at least one main body portion and at least one stepped portion, at least a part of at least one semiconductor chip among the plurality of semiconductor chips is disposed on the at least one stepped portion and is electrically connected to a wiring pattern disposed on the at least one stepped portion. at least a portion of the at least one stepped portion. 2.如权利要求1所述的封装件,其特征在于,基板由半导体材料形成。2. The package of claim 1, wherein the substrate is formed of a semiconductor material. 3.如权利要求2所述的封装件,其特征在于,所述至少一个主体部分和所述至少一个台阶状部分通过蚀刻工艺而一体地形成。3. The package of claim 2, wherein the at least one body portion and the at least one stepped portion are integrally formed by an etching process. 4.如权利要求1所述的封装件,其特征在于,布线图案通过镀覆工艺形成在基板上。4. The package of claim 1, wherein the wiring pattern is formed on the substrate through a plating process. 5.如权利要求1所述的封装件,其特征在于,所述多个半导体芯片以倒装芯片的方式堆叠地安装在基板的上表面上并电连接到布线图案。5. The package of claim 1, wherein the plurality of semiconductor chips are stack-mounted on the upper surface of the substrate in a flip-chip manner and are electrically connected to the wiring pattern. 6.如权利要求1所述的封装件,其特征在于所述封装件还包括:6. The package of claim 1, wherein the package further comprises: 通孔,形成在基板中,并电连接到布线图案。Via holes are formed in the substrate and are electrically connected to the wiring patterns. 7.如权利要求6所述的封装件,其特征在于所述封装件还包括:7. The package of claim 6, wherein the package further comprises: 连接件,设置在基板的下表面上,连接件被通孔电连接到布线图案,从而将所述多个半导体芯片电连接到外部。Connectors are provided on the lower surface of the substrate, the connectors are electrically connected to the wiring patterns by the via holes, thereby electrically connecting the plurality of semiconductor chips to the outside. 8.如权利要求1所述的封装件,其特征在于,布线图案的至少另一部分暴露到所述封装件的外部。8. The package of claim 1, wherein at least another portion of the wiring pattern is exposed to the outside of the package. 9.如权利要求8所述的封装件,其特征在于所述封装件还包括:9. The package of claim 8, wherein the package further comprises: 连接件,设置在布线图案的暴露的所述至少另一部分上,连接件电连接到布线图案的暴露的所述至少另一部分,以将所述多个半导体芯片电连接到外部。A connector disposed on the at least another exposed portion of the wiring pattern, the connector being electrically connected to the at least another exposed portion of the wiring pattern to electrically connect the plurality of semiconductor chips to the outside. 10.如权利要求1所述的封装件,其特征在于,所述多个半导体芯片中的至少另一半导体芯片设置在所述至少一个主体部分上并电连接到布线图案的设置在所述至少一个主体部分上的至少又一部分,包括设置在所述至少一个台阶状部分上的至少一部分的所述至少一个半导体芯片的至少另一部分堆叠在所述至少另一半导体芯片上。10. The package according to claim 1, wherein at least another semiconductor chip of the plurality of semiconductor chips is disposed on the at least one main body portion and is electrically connected to a wiring pattern disposed on the at least one body portion. At least a further part of the one body part, at least another part of the at least one semiconductor chip including at least a part provided on the at least one stepped part is stacked on the at least another semiconductor chip. 11.一种制造封装件的方法,其特征在于所述方法包括如下步骤:11. A method of manufacturing a package, characterized in that said method comprises the steps of: 形成基板,其中,基板包括至少一个主体部分和至少一个台阶状部分;forming a substrate, wherein the substrate includes at least one body portion and at least one stepped portion; 在基板上形成布线图案;forming a wiring pattern on the substrate; 将多个半导体芯片堆叠在基板的上表面上并电连接到布线图案,其中,将所述多个半导体芯片中的至少一个半导体芯片的至少一部分设置在所述至少一个台阶状部分上并电连接到布线图案的设置在所述至少一个台阶状部分上的至少一部分;A plurality of semiconductor chips are stacked on the upper surface of the substrate and electrically connected to the wiring pattern, wherein at least a part of at least one semiconductor chip of the plurality of semiconductor chips is disposed on the at least one stepped portion and electrically connected to at least a portion of the wiring pattern disposed on the at least one stepped portion; 在基板的上表面上形成包封材料层,以包封所述多个半导体芯片。An encapsulation material layer is formed on the upper surface of the substrate to encapsulate the plurality of semiconductor chips. 12.如权利要求11所述的方法,其特征在于,基板由半导体材料形成。12. The method of claim 11, wherein the substrate is formed of a semiconductor material. 13.如权利要求12所述的方法,其特征在于,在形成基板的步骤中,通过蚀刻工艺来一体地形成所述至少一个主体部分和所述至少一个台阶状部分。13. The method of claim 12, wherein, in the step of forming the substrate, the at least one body portion and the at least one stepped portion are integrally formed through an etching process. 14.如权利要求11所述的方法,其特征在于,通过镀覆工艺来在基板上形成布线图案。14. The method of claim 11, wherein the wiring pattern is formed on the substrate through a plating process. 15.如权利要求11所述的方法,其特征在于,以倒装芯片的方式将所述多个半导体芯片安装在基板的上表面上并电连接到布线图案。15. The method of claim 11, wherein the plurality of semiconductor chips are flip-chip mounted on the upper surface of the substrate and electrically connected to the wiring patterns. 16.如权利要求11所述的方法,其特征在于所述方法还包括:16. The method of claim 11, further comprising: 在基板中形成电连接到布线图案的通孔。Via holes electrically connected to the wiring patterns are formed in the substrate. 17.如权利要求16或权利要求17所述的方法,其特征在于所述方法还包括:17. The method according to claim 16 or claim 17, wherein said method further comprises: 在基板的下表面上设置连接件,使得连接件被通孔电连接到布线图案,从而将所述多个半导体芯片电连接到外部。Connectors are provided on the lower surface of the substrate such that the connectors are electrically connected to the wiring patterns by via holes, thereby electrically connecting the plurality of semiconductor chips to the outside. 18.如权利要求11所述的方法,其特征在于,在形成包封材料层的步骤中,将布线图案的至少另一部分暴露到所述封装件的外部。18. The method of claim 11, wherein at least another part of the wiring pattern is exposed to the outside of the package in the step of forming the encapsulation material layer. 19.如权利要求18所述的方法,其特征在于所述方法还包括:19. The method of claim 18, further comprising: 在布线图案的暴露的所述至少另一部分上形成连接件,使得连接件电连接到布线图案的暴露的所述至少另一部分,以将所述多个半导体芯片电连接到外部。A connector is formed on the exposed at least another portion of the wiring pattern such that the connector is electrically connected to the exposed at least another portion of the wiring pattern to electrically connect the plurality of semiconductor chips to the outside. 20.如权利要求11所述的封装件,其特征在于,在堆叠所述多个半导体芯片的步骤中,将所述多个半导体芯片中的至少另一半导体芯片设置在所述至少一个主体部分上并电连接到布线图案的设置在所述至少一个主体部分上的至少又一部分,并将包括设置在所述至少一个台阶状部分上的至少一部分的所述至少一个半导体芯片的至少另一部分堆叠在所述至少另一半导体芯片上。20. The package according to claim 11, wherein, in the step of stacking the plurality of semiconductor chips, at least another semiconductor chip of the plurality of semiconductor chips is disposed on the at least one main body portion and electrically connected to at least another part of the wiring pattern provided on the at least one body part, and at least another part of the at least one semiconductor chip including at least a part provided on the at least one stepped part is stacked. on said at least one other semiconductor chip.
CN2011102100918A 2011-07-15 2011-07-15 Packaging piece and manufacture method thereof Pending CN102280428A (en)

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CN107481957A (en) * 2017-07-31 2017-12-15 广东工业大学 A multi-chip synchronous flip-chip mechanism and its packaging process
CN108028233A (en) * 2015-09-23 2018-05-11 英特尔公司 Substrate, assembly and techniques for implementing multi-chip flip chip packages
CN111816625A (en) * 2020-08-25 2020-10-23 甬矽电子(宁波)股份有限公司 Multilayer chip stacking structure and multilayer chip stacking method

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CN108028233A (en) * 2015-09-23 2018-05-11 英特尔公司 Substrate, assembly and techniques for implementing multi-chip flip chip packages
CN107481957A (en) * 2017-07-31 2017-12-15 广东工业大学 A multi-chip synchronous flip-chip mechanism and its packaging process
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CN111816625A (en) * 2020-08-25 2020-10-23 甬矽电子(宁波)股份有限公司 Multilayer chip stacking structure and multilayer chip stacking method

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