CN102320608B - Crystal crushing device for silicon material purification production and crushing method thereof - Google Patents
Crystal crushing device for silicon material purification production and crushing method thereof Download PDFInfo
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Abstract
The invention discloses a crystal crushing device for silicon material purification production and a crushing method thereof. The crushing device comprises a water boiling pool, a water boiling vehicle and a flushing pipeline, wherein the water boiling vehicle is used for transferring silicon rods in a high-temperature state to the peripheral side of the water boiling pool and pouring the silicon rods into the water boiling pool, the flushing pipeline is connected into the water boiling pool, the water boiling pool is made of stainless steel materials, in addition, a water leakage opening is arranged at the bottom of the water boiling pool, the silicon rods are cylindrical silicon rods pulled by a single-crystal furnace, the water boiling vehicle comprises a crystal connecting tube, a walking mechanism and a lifting mechanism, the crystal connecting tube is a cylindrical tube made of stainless steel, and the upper part of the crystal connecting tube is provided with an opening. The crushing method comprises the following steps that: 1, the vehicle is moved to a crystal taking position; 2, crystals are moved to a sub furnace chamber; 3, argon gas is continuously inflated until a sub chamber door is opened through being impacted by air pressure; 4, the crystals are taken; 5, the vehicle is moved to the peripheral side of the water boiling pool, and the silicon rods are poured into the water boiling pool; and 6, the water boiling crushing is carried out. The crystal crushing device and the crushing method have the advantages that the design is reasonable, the use and the operation are simple and convenient, the investment cost is low, in addition, the use effect is good, and the crystal crushing device and the crushing method have the characteristics that the energy is saved, the environment is protected, the silicon material purification production efficiency is improved, the production cost is reduced, and the like.
Description
Technical field
The invention belongs to silicon material purification techniques field, especially relate to a kind of silicon material purification and produce with crystal crushing device and breaking method thereof.
Background technology
Silicon materials mainly comprise silicon single crystal and polysilicon, and the difference of silicon single crystal and polysilicon is: when the elemental silicon of melting solidified, Siliciumatom was arranged in many nucleus with diamond lattice, if above-mentioned nucleus grows up to the identical crystal grain of high preferred orientation, then formed silicon single crystal; If above-mentioned nucleus grows up to the different crystal grain of high preferred orientation, then form polysilicon.Wherein silicon single crystal claims again silicon single-crystal, is a kind of semiconductor material.In recent years, along with the fast development of photovoltaic industry, silicon single crystal was used to again make solar cell, presented the situation that supply falls short of demand.Along with high-tech development, produce the high quality monocrystalline silicon of almost Perfect, be the common aspiration of each material producer, device producer, this silicon single crystal has the good characteristics that section resistivity evenness, high life, carbon content are few, microdefect density is little, oxygen level can be controlled.Simultaneously, polysilicon also is one of basic raw material of making solar-energy photo-voltaic cell.Single crystal growing furnace is a kind of in inert gas environment, with graphite heater with the polycrystalline materials such as polysilicon fusings, and with the equipment of Grown by CZ Method dislocation-free monocrystalline.
Nowadays, along with the development of science and technology, more and more higher to the purity requirement of silicon materials.At present, when silicon materials are carried out purification processes, usually all adopt silicon refining equipment (usually adopting single crystal growing furnace) that the silicon material that need carry out purification processes is carried out purification processes, and the silicon material after purifying is drawn the formation silicon rod.In the actual use procedure, when need carry out purification processes to adopt single crystal growing furnace to draw the silicon rod that forms again as the silicon raw material, need to carry out just melting down recycling after fragmentation and the pickling to drawing the silicon rod that forms first, and the silicon rod that be broken this moment is called silicon material purification rod.Actual when silicon materials are carried out purification processes, silicon material excellent work of purifying may repeatedly be used as the silicon raw material of purification, and this just need to carry out repeatedly fragmentation and pickling to silicon material purification rod.
At present,, usually all adopt the quick-fried machine of water and carry out break process based on the quick-fried ratio juris of water when carrying out fragmentation drawing the silicon rod (specifically referring to silicon material purification rod) that forms.It is as follows to adopt the quick-fried machine of water to carry out the process of break process: at first, after single crystal growing furnace draws moulding and temperature and is cooled to room temperature, silicon rod is put into the quick-fried machine of water until silicon rod; Afterwards, adopt the quick-fried machine of water first silicon rod to be heated to certain temperature, the silicon rod after will heating again places cold water to make its fragmentation.By analysis as can be known, when adopting the quick-fried machine of water that silicon rod is carried out fragmentation, there are following defective and deficiency: the first, need purchase the quick-fried machine of water, thereby the equipment cost that drops into is larger; The second, need could carry out break process by the quick-fried machine of water after drawing moulding to be cooled to room temperature, then spended time is longer, has greatly affected the purification production efficiency of silicon materials; When three, adopting the quick-fried machine of water to carry out break process, after needing first silicon rod to be heated, place cold water to carry out fragmentation, thereby the energy cost that drops into is larger, simultaneously because heating needs certain hour, thereby the broken time is longer again.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned deficiency of the prior art, a kind of simple in structure, reasonable in design, processing and fabricating is provided and uses silicon material easy and simple to handle and that input cost is low, result of use is good to purify to produce and uses crystal crushing device.
For solving the problems of the technologies described above, the technical solution used in the present invention is: a kind of silicon material is purified to produce and is used crystal crushing device, it is characterized in that: the silicon rod that comprise the quick-fried pond of water, will be in the condition of high temperature moves to side and pour the quick-fried car of water in the quick-fried pond of water into and be connected to flushing pipe in the quick-fried pond of water of quick-fried pond week of water, described flushing pipe and water supply installation join and its on washing control valve is installed; The quick-fried pond of described water is for being made and the pond of upper opening by stainless material, and described basin bottom is provided with scupper, and described scupper joins with the drainage pipeline that is positioned at below, described pond, and water discharging valve is installed on the described drainage pipeline; Described silicon rod for adopt single crystal growing furnace and routinely vertical pulling method draw the cylindrical silicon rod of moulding; The quick-fried car of described water comprises that connect the crystal cylinder, level for the splendid attire silicon rod is installed in the shift mechanism that the travel mechanism that connects crystal cylinder bottom and docking crystal cylinder lift, the described crystal cylinder that connects is upper opening and the inner cylindrical drum that only can hold a silicon rod, described cylindrical drum is processed by stainless material and its internal diameter is not less than the external diameter of institute's splendid attire silicon rod, and described cylindrical drum is vertically to laying and its inner chamber height is not less than the length of silicon rod.
Above-mentioned a kind of silicon material is purified to produce and is used crystal crushing device, it is characterized in that: the quick-fried pond of described water and silicon rod is drawn be provided with the moving passage that the quick-fried car that supplies water moves around between the described single crystal growing furnace of moulding, and the distance between the quick-fried pond of water and the described single crystal growing furnace is not more than 50m.
Above-mentioned a kind of silicon material is purified to produce and is used crystal crushing device, and it is characterized in that: the described central axis that connects the crystal cylinder is parallel laying with the central axis of its inner institute splendid attire silicon rod; And the internal diameter of described cylindrical drum is not more than 2D, and wherein D is the diameter of silicon rod.
Above-mentioned a kind of silicon material is purified to produce and is used crystal crushing device, it is characterized in that: also comprise being fixed on the promotion handrail that connects on the crystal cylinder outer side wall and supply people's hand propelled.
Simultaneously, the present invention also provides the silicon material purification production that a kind of method steps is simple, realization is convenient and required time is short, crushing effect is good to use the crystal fracture method, it is characterized in that the method may further comprise the steps:
Step 4, get crystalline substance: the routine according to single crystal growing furnace is got crystal method, first with described secondary furnace chamber rotation till can take out silicon rod, this moment silicon rod be in the quick-fried car of water of getting brilliant position connect the crystal cylinder over against; Afterwards, by controlling described seed crystal rotary pulling mechanism silicon rod is transferred gradually to connecing in the crystal cylinder, and when put under the silicon rod connect the crystal cylinder after, the connection portion between silicon rod and the described seed chuck is cut off;
Above-mentioned a kind of silicon material is purified and is produced the crystal fracture method of using, it is characterized in that: the quick-fried car of the water described in the step 1 also comprises pours silicon rod into will connect in the process of the quick-fried pond of water on the sidewall upper edge that the crystal cylinder is installed on the quick-fried pond of water block piece, and described block piece is fixed on the outer side wall that connects crystal cylinder top; In the time of will connecing the crystal cylinder and mention with described travel mechanism together with silicon rod by described shift mechanism in the step 5, to connect first on the sidewall upper edge that described block piece set on the crystal cylinder is installed on the quick-fried pond of water, and upwards lift again afterwards described shift mechanism and silicon rod is toppled in the quick-fried pond of water.
Above-mentioned a kind of silicon material is purified to produce and is used the crystal fracture method, and it is characterized in that: described block piece is positioned at and connects crystal cylinder front side, and described shift mechanism is positioned at and connects crystal cylinder rear side.
Above-mentioned a kind of silicon material is purified and is produced the crystal fracture method of using, it is characterized in that: be provided with on the sidewall upper edge in the quick-fried pond of described water and clamp platform, described block piece comprises being fixed on and connects clamping seat and being fixed on the oblique baffle plate that clamps on the seat on the crystal cylinder upper outside wall, described clamp form between seat and the oblique baffle plate one with clamp the match card holding trough of use of platform, the described structure that clamps platform is consistent with the structure of described card holding trough.
Above-mentioned a kind of silicon material is purified to produce and use the crystal fracture method, it is characterized in that: described travel mechanism comprises and is fixedly mounted on wheel shaft and two road wheels that are installed in respectively two ends, the wheel shaft left and right sides that connect bottom the crystal cylinder that described shift mechanism is lifting rod; Described lifting rod bottom is provided with and is level to the axle sleeve of laying, and lifting rod is installed on the wheel shaft by described axle sleeve, and described lifting rod can swing back and forth around wheel shaft.
Above-mentioned a kind of silicon material is purified to produce and is used the crystal fracture method, it is characterized in that: in the step 5 silicon rod is poured into before the quick-fried pond of water, should be guaranteed to retain without moisture in the quick-fried pond of water; The water temperature of high purity water described in the step 6 is that room temperature and its flow are 400kg/h～700kg/h, and flush time is 8min～12min; When the argon gas feed device by described single crystal growing furnace in the step 3 continued in the described secondary furnace chamber applying argon gas, the flow of institute's applying argon gas was 50L/min～70L/min.
The present invention compared with prior art has the following advantages:
1, the crystal crushing device that adopts is reasonable in design, processing and fabricating convenient and input cost is low.
2, the quick-fried bassinet structure of the water that adopts is simple, volume is little, easy to process and use easy and simple to handle, long service life, can be repeatedly used, simultaneously displacement is convenient, can be simple, convenient and move fast.
3, connecing the crystal cylinder and just only can hold a silicon rod in the quick-fried car of the water that adopts, thereby silicon rod carried out in the moving process, the phenomenon that a plurality of silicon rods collide mutually can not appear, and very steady when mobile, the phenomenons such as silicon rod drops can not occur on the quick-fried car of water, can finish simply, easily the silicon rod transport process that is in the condition of high temperature.Simultaneously, the quick-fried car of used water be need not by other any propulsion source by Manual-pushing, thereby has the characteristics of energy-conserving and environment-protective.
4, connect the crystal cylinder and adopt stainless material to make, thereby can not cause to the silicon rod that is in the condition of high temperature any pollution, cleanliness factor is higher.
5, the quick-fried pool structure of the water that adopts is simple, processing and fabricating convenient and input cost is low, result of use is good, adopts simultaneously stainless material to process, thereby in the quick-fried process of water, can not cause any pollution to silicon rod, can effectively guarantee the cleanliness factor of silicon materials.
6, the quick-fried car of the water use that matches with the quick-fried pond of water, can be simple, fast and high quality finish the crystal fracture process, simultaneously owing to the platform that clamps set on block piece set on the quick-fried car of water and the quick-fried pond of the water outer side wall is used, further simplified the operation of silicon rod being poured into the quick-fried pond of water, reduce technician's labour intensity, and improved the efficient of toppling over of silicon rod; Simultaneously, in toppling over the silicon rod process, the phenomenons such as personnel scald, silicon rod is contaminated, silicon rod drops ground, the quick-fried car of water is fallen into the quick-fried pond of water accidentally can not occur and occur.
7, the quick-fried car of water adopts the Manual-pushing mode can not only satisfy the requirement of energy-conserving and environment-protective, and can satisfy the actual demand of crystal fracture fully, can not cause any disadvantageous effect to the purification production efficiency of silicon materials.After getting brilliant the end, adopt the quick-fried car of water that the silicon rod that is in the condition of high temperature is carried out in the shifting process, the production sequence of single crystal growing furnace can not be affected, and can carry out continuously the drawing of next silicon rod.
8, the crystal crushing device that adopts (comprising the quick-fried car of water and the quick-fried pond of water) serviceability temperature is used safety, and easy to maintenance, and maintenance cost is low.
9, the crystal fracture method steps that adopts is simple, realize convenient and be easy to grasping, workable, after the drawing of purification silicon rod is complete, immediately silicon rod is promoted in the secondary furnace chamber stove cylinder, after silicon rod all enters secondary furnace chamber stove cylinder, to turn under the single crystal growing furnace flap valve, winner's furnace chamber and secondary furnace chamber are isolated, the state that still keeps logical argon gas furnace cooling in the main furnace chamber, applying argon gas in the secondary furnace chamber until the concubine door be rushed to open, after the concubine door is washed open, secondary furnace chamber is mentioned, rotation is fallen into the silicon rod of red heat state and is connect in the crystal cylinder, when the silicon rod bottom is about to touch the position of crystal cylinder bottom, cut off the thin neck of silicon rod top, make silicon rod and seed crystal break away from and fall into and connect the crystal cylinder; Subsequently, rapidly the quick-fried car of water is moved to by the quick-fried pond of water, make after the upper edge in draw-in groove and the quick-fried pond of water fits and post, lifting rod is mentioned, the silicon rod that connects in the crystal cylinder is slipped in the quick-fried pond of water, then with high purity water plane of crystal is washed, make it broken.
10, the silicon materials after the fragmentation after blowing out half an hour, just can carry out the quick-fried operation of water, thereby greatly improve the crushing efficiency of crystal, so that can come into operation fast again.Nowadays, when adopting the quick-fried machine of water to carry out fragmentation, need be after single crystal growing furnace blowing out 4-5 hour, just to take out crystal, it is quick-fried to adopt afterwards the quick-fried machine of water that the crystal that takes out is carried out water again, and when adopting the quick-fried machine of water to carry out the quick-fried processing of water, because this moment, the temperature of silicon rod was down to the temperature that can not directly carry out the quick-fried processing of water, then needed again to heat silicon rod, the water that carries out again to the certain temperature to be heated is quick-fried.The quick-fried method of water of the present invention is compared with the existing method that adopts the quick-fried machine of water to carry out the quick-fried processing of water, has greatly shortened the quick-fried processing of the water waiting time before, has improved the crushing efficiency of silicon rod, so that silicon rod can come into operation rapidly again; And after the quick-fried car of employing water was got brilliant the end, single crystal growing furnace just can enter next technical process, thereby has also increased substantially the production efficiency of single crystal growing furnace; Simultaneously, carry out need not to adopt again heating unit that silicon rod is heated again, thereby having saved a large amount of energy before the quick-fried processing of water, effectively reduce energy loss, further reduced production cost, improved the purification production efficiency of silicon materials.In addition, enterprise need not to purchase the quick-fried machine of water again behind employing the present invention, thereby has saved a large amount of equipment investment costs.
In sum, the present invention is reasonable in design, use is easy and simple to handle, input cost is low and result of use good, have energy-conserving and environment-protective, improve silicon materials purification production efficiency, the characteristics such as reduce production costs, can solve effectively that the existing equipment cost that exists when adopting the quick-fried machine of water to carry out crystal fracture is large, spended time is long, lower, the more high multiple practical problems of energy consumption of purification production efficiency.
Below by drawings and Examples, technical scheme of the present invention is described in further detail.
Description of drawings
Fig. 1 is the use state reference map of crystal crushing device that the present invention adopts.
Fig. 2 is the structural representation that the present invention adopts the quick-fried car of water.
Fig. 3 is that the present invention connects the internal structure synoptic diagram behind the splendid attire silicon rod in the crystal cylinder.
Method flow block diagram when Fig. 4 carries out crystal fracture for employing the present invention.
Description of reference numerals:
Embodiment
Such as Fig. 1, Fig. 2, Fig. 3 and shown in Figure 4, silicon material of the present invention is purified to produce and is used crystal crushing device, the silicon rod 2 that comprise the quick-fried pond 1 of water, will be in the condition of high temperature moves to water quick-fried pond 1 all sides and pours the quick-fried car 3 of water in the quick-fried pond 1 of water into and be connected to flushing pipe 4 in the quick-fried pond 1 of water, described flushing pipe 4 join with water supply installation and its on washing control valve 5 is installed.The quick-fried pond of described water 1 is for being made by stainless material and the pond of upper opening, and described basin bottom is provided with scupper 5, and described scupper 5 joins with the drainage pipeline 7 that is positioned at below, described pond, on the described drainage pipeline 7 water discharging valve 6 is installed.Described silicon rod 2 for adopt single crystal growing furnace and routinely vertical pulling method draw the cylindrical silicon rod of moulding.The quick-fried car 3 of described water comprises that connect the crystal cylinder 3-1, level for splendid attire silicon rod 2 is installed in the shift mechanism that the travel mechanism that connects crystal cylinder 3-1 bottom and docking crystal cylinder 3-1 lift, the described crystal cylinder 3-1 that connects is upper opening and the inner cylindrical drum that only can hold a silicon rod 2, described cylindrical drum is processed by stainless material and its internal diameter is not less than the external diameter of institute's splendid attire silicon rod 2, and described cylindrical drum is vertically to laying and its inner chamber height is not less than the length of silicon rod 2.
In the present embodiment, the quick-fried pond 1 of described water and silicon rod 2 is drawn be provided with the moving passage that the quick-fried car 3 that supplies water moves around between the described single crystal growing furnace of moulding, and the distance between the quick-fried pond 1 of water and the described single crystal growing furnace is not more than 50m.In the actual use procedure, should the distance between the quick-fried pond 1 of water and the described single crystal growing furnace be adjusted accordingly according to the concrete needs of reality, and should guarantee that the quick-fried pond 1 of water all can work with described single crystal growing furnace.Described washing control valve 5 is for being installed in the water tap on the flushing pipe 4.
When adopting 3 pairs of silicon rods of the quick-fried car of water 2 to carry out splendid attire, the described central axis that meets crystal cylinder 3-1 is parallel laying with the central axis of its inner institute splendid attire silicon rod 2.And the internal diameter of described cylindrical drum is not more than 2D, and wherein D is the diameter of silicon rod 2.
Simultaneously, for promoting conveniently, silicon material of the present invention is purified to produce and is also comprised being fixed on crystal crushing device and connect on the crystal cylinder 3-1 outer side wall and for the promotion handrail 3-7 of people's hand propelled.In the present embodiment, the quantity of described promotion handrail 3-7 is that two and two promote handrail 3-7 and are laid in respectively the top, the left and right sides that meets crystal cylinder 3-1.During actual processing and fabricating, the structure of two described promotion handrail 3-7 and measure-alike, and two promotion handrail 3-7 symmetries are laid in the top, the left and right sides that meets crystal cylinder 3-1.In addition, described promotion handrail 3-7 is made by stainless material, and promotes handrail 3-7 and be connected with welding process with connecing between the crystal cylinder 3-1.
A kind of silicon material is as shown in Figure 4 purified to produce and is used the crystal fracture method, may further comprise the steps:
In the present embodiment, adopt single crystal growing furnace and after vertical pulling method is finished the pulling process and blowing out 30min of silicon rod 2 routinely, begin to carry out the quick-fried operation of water.Specifically behind the blowing out 30min, according to the crystal method of getting of conventional single crystal growing furnace, determine the brilliant position of getting of described single crystal growing furnace first, afterwards the quick-fried car 3 of water is moved to getting on the brilliant position after determining.
Described seed crystal rotary lifting mechanism is installed described secondary furnace chamber top, and in the crystal pulling process, the Main Function of described seed crystal rotary lifting mechanism provides brilliant the liter and brilliant rotary speed, changes to control the crystal diameter of the silicon single-crystal that draws by the switching value of PCC control module.
In the actual mechanical process, when the argon gas feed device by described single crystal growing furnace continued in the described secondary furnace chamber applying argon gas, the flow of institute's applying argon gas was 50L/min～70L/min.Described argon gas feed device is the device that single crystal growing furnace carries.In the present embodiment, the flow of institute's applying argon gas is 60L/min.Thereby, can be according to the concrete needs of reality, the flow of institute's applying argon gas in this step is adjusted accordingly.
Step 4, get crystalline substance: the routine according to single crystal growing furnace is got crystal method, first with described secondary furnace chamber rotation till can take out silicon rod 2, this moment silicon rod 2 be in the quick-fried car 3 of the water of getting brilliant position connect crystal cylinder 3-1 over against; Afterwards, by controlling described seed crystal rotary pulling mechanism silicon rod 2 is transferred gradually to connecing in the crystal cylinder 3-1, and when silicon rod put into for 2 times meet crystal cylinder 3-1 after, the connection portion between silicon rod 2 and the described seed chuck is cut off.Connection portion between described silicon rod 2 and the described seed chuck is Seed neck.
Actual when getting crystalline substance, after by body of heater lifting opener described secondary furnace chamber (perhaps with secondary furnace chamber together with bell together) being raised to upper limit position first, the described secondary furnace chamber of slow circumvolve is got crystalline substance afterwards again until can take out till the silicon single-crystal crystal (being silicon rod 2).
In the actual mechanical process, silicon rod 2 is poured into before the quick-fried pond 1 of water, should be guaranteed that the quick-fried pond of water 1 is interior to retain without moisture.Thereby, before silicon rod 2 being poured into the quick-fried pond 1 of water, if find to leave moisture in the quick-fried pond 1 of water, then should first opening water discharge valve 6, the moisture that retains in the quick-fried pond 1 of water is all discharged.
Actual the silicon rod 2 that is arranged in the quick-fried pond 1 of water is carried out flushing process, after the plane of crystal drop in temperature of silicon rod 2 to the red heat look of plane of crystal disappears, and when can't hear water and sending the sound because crystal evaporates the heat that produces, close washing control valve 5.Afterwards, with the stainless steel hammer crystal is broken into pieces, and closed water discharging valve 6.Behind the described water discharging valve 6, open again washing control valve 5, to water quick-fried pond 1 interior retaining to the silicon material after the fragmentation is all flooded.
In the actual mechanical process, the water temperature of high purity water described in the step 6 is that room temperature and its flow are 400kg/h～700kg/h, and flush time is 8min～12min.In the present embodiment, the flow of described high purity water is 650kg/h, and flush time is 10min.Thereby, should be according to the concrete needs of reality, flow and the flush time of described high purity water adjusted accordingly.
During actual the cleaning, used high purity water is the high water of chemical purity, and the content of its impurity is less than 0.1mg/L.At present, the purity of the high purity water that can make has reached 99.999999%, and wherein foreign matter content is lower than 0.01mg/L.When high purity water referred to that mainly the temperature of water is 25 ℃, specific conductivity was less than 0.1us/cm, and the pH value is for 6.8-7.0 and remove the water of other impurity and bacterium.
In the present embodiment, the quick-fried car 3 of the water described in the step 1 also comprises pours silicon rod 2 into will connect in 1 process of the quick-fried pond of water on the sidewall upper edge that crystal cylinder 3-1 is installed on the quick-fried pond 1 of water block piece, and described block piece is fixed on the outer side wall that connects crystal cylinder 3-1 top; In the time of will meeting crystal cylinder 3-1 and mention with described travel mechanism together with silicon rod 2 by described shift mechanism in the step 5, to connect first the upper set described block piece of crystal cylinder 3-1 and be installed on the sidewall upper edge in the quick-fried pond 1 of water, and upwards lift again afterwards described shift mechanism and silicon rod 2 is toppled in the quick-fried pond 1 of water.
Simultaneously, for toppling over conveniently, in the present embodiment, the height of described block piece is mutually concordant with the sidewall upper edge in the quick-fried pond 1 of water.Like this, in the time of will meeting crystal cylinder 3-1 and mention with described travel mechanism together with silicon rod 2 by described shift mechanism in the step 5, first the quick-fried car 3 of water is moved to block piece set on it over against the sidewall upper edge in the quick-fried pond 1 of water, and so that described block piece be installed on the sidewall upper edge in the quick-fried pond 1 of water, upwards lift again afterwards described shift mechanism, silicon rod 2 is toppled in the quick-fried pond 1 of water.
In the present embodiment, described block piece is positioned at and connects crystal cylinder 3-1 front side, and described shift mechanism is positioned at and connects crystal cylinder 3-1 rear side, and two promote handrail 3-7 and are laid in respectively the top rear side that meets crystal cylinder 3-1.
Actual when carrying out processing and fabricating, be provided with on the sidewall upper edge in the quick-fried pond 1 of described water and clamp platform 3-6, described block piece comprises being fixed on and connects clamping a 3-4 and being fixed on the oblique baffle plate 3-5 that clamps on the 3-4 on the crystal cylinder 3-1 upper outside wall, described clamp between a 3-4 and the oblique baffle plate 3-5 form one with clamp the match card holding trough of use of platform 3-6, the described structure that clamps platform 3-6 is consistent with the structure of described card holding trough.In the present embodiment, described clamp platform 3-6 be spiral-lock on 1 sidewall upper edge, the quick-fried pond of water and cross section be the fastener of U font.Simultaneously, clamping a 3-4 is connected with welding process with connecing between the crystal cylinder 3-1.
Actually add man-hour, described oblique baffle plate 3-5 made by stainless material and itself and connect crystal cylinder 3-1 processing and fabricating and be integrated, described oblique baffle plate 3-5 and the angle that connects between the central axis of crystal cylinder 3-1 are 30 ° ± 15 °, and described oblique baffle plate 3-5 is from top to bottom gradually to connecing crystal cylinder 3-1 lopsidedness.In the present embodiment, described oblique baffle plate 3-5 and the angle that connects between the central axis of crystal cylinder 3-1 are 30 °, in the actual course of processing, can be according to the concrete needs of reality, oblique baffle plate 3-5 and the angle that connects between the central axis of crystal cylinder 3-1 are adjusted accordingly.
In the present embodiment, the quick-fried pond 1 of described water is cubic shaped, and is provided with sealing cover 8 on the upper opening in the quick-fried pond 1 of water.The described quantity that clamps platform 3-6 is one, and this clamps on one of them sidewall that platform 3-6 is laid in the quick-fried pond 1 of water.
In the present embodiment, described travel mechanism comprises and is fixedly mounted on wheel shaft 3-2 and two the road wheel 3-3 that are installed in respectively two ends, the wheel shaft 3-2 left and right sides that connect crystal cylinder 3-1 bottom that described shift mechanism is lifting rod 3-3.Described lifting rod 3-3 bottom is provided with and is level to the axle sleeve of laying, and lifting rod 3-3 is installed on the wheel shaft 3-2 by described axle sleeve, and described lifting rod 3-3 can swing back and forth around wheel shaft 3-2.Actual when carrying out processing and fabricating, described wheel shaft 3-2 level is installed in the rear side below that meets crystal cylinder 3-1, and meets crystal cylinder 3-1 and steadily be positioned on the ground by described travel mechanism.Simultaneously, described wheel shaft 3-2 is connected with welding process with connecing between the crystal cylinder 3-1.Actually add man-hour, also be provided with temporary fixing piece for temporary fixed lifting rod 3-3 at the rear side outer side wall that meets crystal cylinder 3-1.
The above; it only is preferred embodiment of the present invention; be not that the present invention is imposed any restrictions, every any simple modification, change and equivalent structure of above embodiment being done according to the technology of the present invention essence changes, and all still belongs in the protection domain of technical solution of the present invention.
Claims (7)
1. a silicon material is purified to produce and is used crystal crushing device, it is characterized in that: the silicon rod (2) that comprise the quick-fried pond of water (1), will be in the condition of high temperature moves to all sides in the quick-fried pond of water (1) and pours the quick-fried car of water (3) in the quick-fried pond of water (1) into and be connected to flushing pipe (4) in the quick-fried pond of water (1), described flushing pipe (4) and water supply installation join and its on washing control valve (5) is installed; The quick-fried pond of described water (1) is for being made and the pond of upper opening by stainless material, and described basin bottom is provided with scupper (5), described scupper (5) joins with the drainage pipeline (7) that is positioned at below, described pond, and water discharging valve (6) is installed on the described drainage pipeline (7); Described silicon rod (2) for adopt single crystal growing furnace and routinely vertical pulling method draw the cylindrical silicon rod of moulding; The quick-fried car of described water (3) comprises that connect the crystal cylinder (3-1), level for splendid attire silicon rod (2) is installed in the shift mechanism that the travel mechanism that connects crystal cylinder (3-1) bottom and docking crystal cylinder (3-1) lift, the described crystal cylinder (3-1) that connects is the cylindrical drum that upper opening and inside only can hold a silicon rod (2), described cylindrical drum is processed by stainless material and its internal diameter is not less than the external diameter of institute's splendid attire silicon rod (2), and described cylindrical drum is vertically to laying and its inner chamber height is not less than the length of silicon rod (2); The quick-fried pond of described water (1) and silicon rod (2) is drawn be provided with the moving passage that the quick-fried car (3) that supplies water moves around between the described single crystal growing furnace of moulding, and the distance between the quick-fried pond of water (1) and the described single crystal growing furnace is not more than 50m; The described central axis that connects crystal cylinder (3-1) is parallel laying with the central axis of its inner institute's splendid attire silicon rod (2), and the internal diameter of described cylindrical drum is not more than 2D, and wherein D is the diameter of silicon rod (2); Also comprise and be fixed on the promotion handrail (3-7) that connects on crystal cylinder (3-1) outer side wall and supply people's hand propelled.
2. one kind is utilized crystal crushing device as claimed in claim 1 that silicon rod is carried out broken silicon material to purify to produce and use the crystal fracture method, it is characterized in that the method may further comprise the steps:
Step 1, move car to getting brilliant position: adopt single crystal growing furnace and routinely vertical pulling method finish the pulling process of silicon rod (2), and behind blowing out 30min ± 5min, the quick-fried car of water (3) moved to gets brilliant position; Described get brilliant position for the secondary furnace chamber rotation of described single crystal growing furnace to can take out silicon rod (2) time, the position under the silicon rod (2);
Step 2, move brilliant in secondary furnace chamber: by the seed crystal rotary pulling mechanism of described single crystal growing furnace, silicon rod (2) is promoted in the secondary furnace chamber of described single crystal growing furnace; At this moment, described silicon rod (2) be suspended in seed chuck under, described seed chuck is fixed on weight below and described weight and joins by stay cord and described seed crystal rotary pulling mechanism;
Step 3, continue applying argon gas until the concubine door is washed open by air pressure inside: close the main furnace chamber of described single crystal growing furnace and the flap valve between the described secondary furnace chamber, so that described main furnace chamber and described secondary furnace chamber are isolated; Simultaneously, the argon gas feed device by described single crystal growing furnace continues applying argon gas in the described secondary furnace chamber, until described secondary furnace chamber air pressure inside is washed the concubine door of described secondary furnace chamber open;
Step 4, get crystalline substance: the routine according to single crystal growing furnace is got crystal method, first with described secondary furnace chamber rotation till can take out silicon rod (2), silicon rod this moment (2) be in the quick-fried car of the water of getting brilliant position (3) connect crystal cylinder (3-1) over against; Afterwards, by controlling described seed crystal rotary pulling mechanism silicon rod (2) is transferred gradually to connecing in the crystal cylinder (3-1), and when put under the silicon rod (2) connect crystal cylinder (3-1) after, the connection portion between silicon rod (2) and the described seed chuck is cut off;
Step 5, move car to the quick-fried pond of water week side and fall silicon rod to the quick-fried pond of water: manually promote the quick-fried car of water (3) and it is moved to all rear flank, the quick-fried pond of water (1), to connect crystal cylinder (3-1) by described shift mechanism and mention together with silicon rod (2) and described travel mechanism, and silicon rod (2) will be toppled in the quick-fried pond of water (1);
Step 6, water explosion are broken: open described water discharging valve (6) and washing control valve (5), by flushing pipe (4) and adopt high purity water that the silicon rod (2) that is positioned at the quick-fried pond of water (1) is washed, until till silicon rod (2) fragmentation.
3. purify according to a kind of silicon material claimed in claim 2 and produce the crystal fracture method of using, it is characterized in that: the quick-fried car of the water described in the step 1 (3) also comprises pours silicon rod (2) into will connect in the process of the quick-fried pond of water (1) on the sidewall upper edge that crystal cylinder (3-1) is installed on the quick-fried pond of water (1) block piece, and described block piece is fixed on the outer side wall that connects crystal cylinder (3-1) top; In the time of will connecing crystal cylinder (3-1) and mention with described travel mechanism together with silicon rod (2) by described shift mechanism in the step 5, to connect first the upper set described block piece of crystal cylinder (3-1) and be installed on the sidewall upper edge in the quick-fried pond of water (1), and upwards lift again afterwards described shift mechanism and silicon rod (2) is toppled in the quick-fried pond of water (1).
4. purify to produce according to a kind of silicon material claimed in claim 3 and use the crystal fracture method, it is characterized in that: described block piece is positioned at and connects crystal cylinder (3-1) front side, and described shift mechanism is positioned at and connects crystal cylinder (3-1) rear side.
5. purify according to claim 3 or 4 described a kind of silicon material and produce the crystal fracture method of using, it is characterized in that: be provided with on the sidewall upper edge in the quick-fried pond of described water (1) and clamp platform (3-6), described block piece comprises being fixed on and connects clamping seat (3-4) and being fixed on an oblique baffle plate (3-5) that clamps on (3-4) on crystal cylinder (3-1) the upper outside wall, described clamp form between seat (3-4) and the oblique baffle plate (3-5) one with clamp the match card holding trough of use of platform (3-6), the described structure that clamps platform (3-6) is consistent with the structure of described card holding trough.
6. purify according to a kind of silicon material claimed in claim 4 and produce the crystal fracture method of using, it is characterized in that: described travel mechanism comprises and is fixedly mounted on wheel shaft (3-2) and two road wheels (3-3) that are installed in respectively wheel shaft (3-2) two ends, the left and right sides that connect crystal cylinder (3-1) bottom that described shift mechanism is lifting rod (3-3); Described lifting rod (3-3) bottom is provided with and is level to the axle sleeve of laying, and lifting rod (3-3) is installed on the wheel shaft (3-2) by described axle sleeve, and described lifting rod (3-3) can swing back and forth around wheel shaft (3-2).
7. purify to produce and use the crystal fracture method according to claim 2,3 or 4 described a kind of silicon material, it is characterized in that: pour silicon rod (2) into the quick-fried pond of water (1) before in the step 5, should guarantee to retain without moisture in the quick-fried pond of water (1); The water temperature of high purity water described in the step 6 is that room temperature and its flow are 400kg/h～700kg/h, and flush time is 8min～12min; When the argon gas feed device by described single crystal growing furnace in the step 3 continued in the described secondary furnace chamber applying argon gas, the flow of institute's applying argon gas was 50L/min～70L/min.
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| CN2011101974816A CN102320608B (en) | 2011-07-14 | 2011-07-14 | Crystal crushing device for silicon material purification production and crushing method thereof |
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| CN2011101974816A CN102320608B (en) | 2011-07-14 | 2011-07-14 | Crystal crushing device for silicon material purification production and crushing method thereof |
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| CN105239163A (en) * | 2015-09-21 | 2016-01-13 | 新疆大全新能源有限公司 | Control Method of Metal Impurity Content on Polysilicon Surface |
| CN105689053B (en) * | 2016-03-16 | 2018-05-15 | 江苏华盛天龙光电设备股份有限公司 | A kind of raw material reducing mechanism for single crystal growing furnace |
| CN109208073A (en) * | 2018-11-27 | 2019-01-15 | 江苏拓正茂源新能源有限公司 | A kind of preparation process of solar energy polycrystalline silicon raw material |
| CN110605176A (en) * | 2019-10-23 | 2019-12-24 | 西安华晶电子技术股份有限公司 | Method for breaking polycrystalline silicon material through water explosion |
| CN113061974B (en) * | 2021-03-23 | 2022-02-15 | 浙江晶阳机电股份有限公司 | Vacuum straight pulling furnace production mechanism and straightening and crystal taking method thereof |
| CN114405636B (en) * | 2022-02-14 | 2024-01-30 | 江苏鑫华半导体科技股份有限公司 | Method and device for crushing electronic grade polysilicon in CVD furnace |
| CN115138203B (en) * | 2022-05-25 | 2025-07-22 | 苏州市兴鲁空分设备科技发展有限公司 | Single crystal furnace tail gas purification method and device |
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| JP2005288332A (en) * | 2004-03-31 | 2005-10-20 | Mitsubishi Materials Polycrystalline Silicon Corp | Crushing method of polycrystalline silicon rod |
| CN201473321U (en) * | 2009-04-07 | 2010-05-19 | 宝鸡宝色特种金属有限责任公司 | Polysilicon stick thermodynamic breaker |
| US8490901B2 (en) * | 2009-07-28 | 2013-07-23 | Mitsubishi Materials Corporation | Method of generating cracks in polycrystalline silicon rod and crack generating apparatus |
| CN201695109U (en) * | 2010-04-29 | 2011-01-05 | 杭州富通半导体设备科技有限公司 | Opening door single-crystal furnace crystal bar take-out vehicle |
| CN201729664U (en) * | 2010-05-27 | 2011-02-02 | 国电宁夏太阳能有限公司 | Polysilicon rod crushing equipment |
| CN202116324U (en) * | 2011-07-14 | 2012-01-18 | 西安华晶电子技术股份有限公司 | Crystal crushing device for silicon material purification production |
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