CN102375282B - Electronic paper display device and manufacturing method thereof - Google Patents
Electronic paper display device and manufacturing method thereof Download PDFInfo
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- CN102375282B CN102375282B CN201010257221.9A CN201010257221A CN102375282B CN 102375282 B CN102375282 B CN 102375282B CN 201010257221 A CN201010257221 A CN 201010257221A CN 102375282 B CN102375282 B CN 102375282B
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Abstract
The invention relates to an electronic paper display device and a manufacturing method thereof. The electronic paper display device includes: a thin film transistor array substrate and a display panel. The thin film transistor array substrate includes: a first substrate; a first metal layer on the first substrate; a dielectric layer on the first substrate and covering the first metal layer; a second metal layer on the dielectric layer; a channel layer on the dielectric layer; a protective layer on the second metal layer and the channel layer; a first resin layer on the protective layer; a pixel electrode layer on the first resin layer and a second resin layer on the pixel electrode layer. The display panel comprises a second substrate; a transparent electrode layer on the second substrate, and an electronic ink material layer between the transparent electrode layer and the TFT array substrate.
Description
Technical field
The invention relates to a kind of electric paper apparatus and manufacture method thereof, and particularly about a kind of display device of electronic paper and manufacture method thereof that prevents shock.
Background technology
Along with the fast development of display technique, the display device of many novelties is constantly developed, and wherein, display device of electronic paper has the plurality of advantages such as low power consumption, slimming, long-life, deflection, and has the potentiality of development.
Display device of electronic paper initial development is in the 1970's, and its characteristic is to comprise many charged beads, and wherein the one side of ball is white, and another side is black, and in the time that electric field changes, club rotates up and down, and presents different colours.The display device of electronic paper of the second generation is to be developed in generation nineteen ninety, and its characteristic is to replace traditional bead with microcapsules (micro-capsulations), and in microcapsules oil (oil) and the charged white particle of filling color.Make white particle up or move down by the control of external electric field, wherein when white particle up (while approaching reader's direction) demonstrate white, when white particle down time (away from reader's direction time) shows fuel-displaced color.
But traditional electric paper display is that display panel is attached on thin-film transistor array base-plate, after display panel top is clashed into, the thin film transistor (TFT) on thin-film transistor array base-plate easily has problem impaired and that lost efficacy.Therefore, how protection film transistor was not lost efficacy because display panel clashes into, for slip-stick artist desires most ardently the problem of solution.
Summary of the invention
Fundamental purpose of the present invention is to provide a kind of display device of electronic paper and manufacture method thereof, prevents from, because display panel is clashed into, causing the problem of film crystal tube failure by an extra resin bed.
Fundamental purpose of the present invention is to provide a kind of display device of electronic paper and manufacture method thereof, disperses impact by an extra resin bed, prevents because display panel is clashed into the problem of film crystal tube failure.
A kind of display device of electronic paper is provided according to an aspect of the present invention, comprises: a thin-film transistor array base-plate and a display panel, be arranged at a side of this thin-film transistor array base-plate.Wherein this thin-film transistor array base-plate comprises: a first substrate; One the first metal layer, is arranged on this first substrate, and wherein this first metal layer comprises multi-strip scanning line and multiple grid, is electrically connected with described these sweep traces; One dielectric layer, is arranged on this first substrate, and covers this first metal layer; One second metal level, is arranged on this dielectric layer, and this second metal level comprises many data lines, multiple source electrode and multiple drain electrode, and wherein said these source electrodes are electrically connected described these data lines; One channel layer, is arranged on this dielectric layer between described these source electrodes, described these grids and described these grids; One protective seam, is arranged on this second metal level and this channel layer; One first resin bed, is arranged on this protective seam; One pixel electrode layer, is arranged on this first resin bed, and wherein pixel electrode layer comprises multiple pixel electrodes; One second resin bed, is arranged on this pixel electrode layer.And display panel comprises a second substrate; One transparent electrode layer, is arranged on this second substrate; And an electronic ink material layer, be arranged between this transparent electrode layer and this thin-film transistor array base-plate.
In one embodiment, described these sweep traces and described these data lines cross multiple pixel regions, and described these a few pixel electrodes lay respectively in described these pixel regions.
In one embodiment, this second resin bed is disposed on thin-film transistor array base-plate comprehensively, to cover described these sweep traces, described these data lines, described these pixel electrodes.
In one embodiment, this second resin bed has square array structure and is configured on thin-film transistor array base-plate, covers described these pixel electrodes, and exposes described these sweep traces, described these data lines.
In one embodiment, this second resin bed has groined type structure and is configured on thin-film transistor array base-plate, covers described these sweep traces, described these data lines, and exposes described these pixel electrodes.
In one embodiment, this second resin bed has multiple island shape structures and is configured on thin-film transistor array base-plate.
In one embodiment, the thickness of this second resin bed is 0.5 to 10 μ m.
In one embodiment, this second resin bed can use eurymeric or negative type photoresist to form.
In one embodiment, this second resin bed is acrylic acid (Acrylic) resin or resin and silica gel (Silicagel) hybrid material; Or ethylene-vinyl acetate copolymer (Ethylene-Vinyl Acetate copolymer, EVA); Or the hybrid material of resin and inorganic material.
A kind of display device of electronic paper method for making is provided according to a further aspect of the invention, comprises: form a thin-film transistor array base-plate; And form a display panel in a side of this thin-film transistor array base-plate.Wherein forming this thin-film transistor array base-plate also comprises: form a first substrate; On this first substrate, form a first metal layer, wherein this first metal layer comprises multi-strip scanning line and multiple grid, is electrically connected with described these sweep traces; On this first substrate and this first metal layer, form a dielectric layer; On this dielectric layer, form one second metal level, wherein this second metal level comprises many data lines, multiple source electrode and multiple drain electrode, and wherein said these source electrodes are electrically connected described these data lines; On this dielectric layer between described these source electrodes, described these grids and described these grids, form a channel layer; On this second metal level and this channel layer, form a protective seam; On this protective seam, form one first resin bed; On this first resin bed, form a pixel electrode layer, wherein pixel electrode layer comprises multiple pixel electrodes; On this pixel electrode layer, form one second resin bed.Wherein forming this display panel also comprises: form a second substrate; On this second substrate, form a transparent electrode layer; And form an electronic ink material layer between this transparent electrode layer and this thin-film transistor array base-plate.
In one embodiment, described these sweep traces and described these data lines cross multiple pixel regions, and described these a few pixel electrodes lay respectively in described these pixel regions.
In one embodiment, this second resin bed covers described these sweep traces, described these data lines, described these pixel electrodes.
In one embodiment, also comprise this second resin bed of patterning, make this second resin bed there is square array structure to cover described these pixel electrodes, and expose described these sweep traces, described these data lines.
In one embodiment, also comprise this second resin bed of patterning, make this second resin bed there is groined type structure to cover described these sweep traces, described these data lines, and expose described these pixel electrodes.
In one embodiment, also comprise this second resin bed of patterning, make this second resin bed there are multiple island shape structures and be configured on thin-film transistor array base-plate.
In one embodiment, the thickness of this second resin bed is 0.5 to 10 μ m.
In one embodiment, also comprise with eurymeric or negative type photoresist and form this second resin bed.
In one embodiment, also comprise with acrylic acid (Acrylic) resin or resin and silica gel (Silica gel) hybrid material and form this second resin bed; Or form this second resin bed with ethylene-vinyl acetate copolymer (Ethylene-Vinyl Acetatecopolymer, EVA); Or with this second resin bed material that blendes together of resin and inorganic material.
Useful technique effect of the present invention is: the present invention becomes separately one second resin bed on pixel electrode, in the time that display panel suffers external force collision, this second resin bed dispersibles this impact, avoid because single demonstration point suffers excessive shock, be expressed to thin-film transistor array base-plate, and damage the transistor arrangement of below, cause corresponding microcapsules by driven, to affect display quality.
Brief description of the drawings
For above and other objects of the present invention, feature, advantage can be become apparent, below with reference to accompanying drawing, preferred embodiment of the present invention is elaborated, wherein:
Figure 1A illustrates the vertical view of a kind of thin-film transistor array base-plate in preferred embodiment of the present invention.
Figure 1B illustrates along the diagrammatic cross-section of the A-A ' line in Figure 1A.
Fig. 2 illustrates and on first substrate, forms the first metal layer.
Fig. 3 illustrates and forms a dielectric layer on the first metal layer.
Fig. 4 is illustrated in and on dielectric layer, defines a channel layer, and forms one second metal level in channel layer and dielectric layer top.
Fig. 5 illustrates and forms a protective seam and one first resin.
Fig. 6 is illustrated in and on pixel electrode layer, forms one second resin bed.
Fig. 7 illustrates with square array structure and is shown in and on thin-film transistor array base-plate, forms the second resin bed.
Fig. 8 illustrates with groined type structure and on thin-film transistor array base-plate, forms the second resin bed.
Embodiment
Figure 1B illustrates the vertical view of a kind of thin-film transistor array base-plate in preferred embodiment of the present invention.Figure 1A illustrates along the diagrammatic cross-section of the A-A ' line in Figure 1B.Please refer to Figure 1A and Figure 1B.Display device of electronic paper 100 comprises thin-film transistor array base-plate 200 and display panel 300, and display panel 300 is disposed at a side of thin-film transistor array base-plate 200.
Thin-film transistor array base-plate 200 comprises a first substrate 210, a first metal layer 220, a dielectric layer 230, one second metal level 240, a channel layer 250, pixel electrode layer 260, protective seam 270, one first resin bed 280 and one second resin bed 290.
The first metal layer 220 is to be disposed on first substrate 210 with dielectric layer 230, and its dielectric layer 230 covers on the first metal layer 220, and wherein the first metal layer 220 is the grids 224 that form sweep trace 222 and be electrically connected with sweep trace 222.The second metal level 240 is to be disposed on dielectric layer 230, and wherein the second metal level 240 is source electrode 244 and the drain electrodes 246 that form data line 242 and be electrically connected with data line 242.Protective seam 270 is covered on the second metal level 240.One first resin bed 280 is covered on protective seam 270.Pixel electrode layer 260 is disposed on the first resin bed 280.Wherein in the first resin bed 280 and protective seam 270, be formed with the contact hole 282 of a perforation, allow pixel electrode layer 260 be electrically connected to the second metal level 240 through this contact hole 282 to expose the subregion of the drain electrode 246 in each pixel region 212, to use.One second resin bed 290 is disposed on pixel electrode layer 260, as a cushion, is not lost efficacy because display panel clashes in order to protection film transistor.Wherein as the second metal level 240 of data line 242 with cross multiple pixels 212 as the first metal layer 220 of sweep trace 222 in first substrate 210, and grid 224, source electrode 224 and drain electrode 246 are to be disposed in each pixel region 212.Channel layer 250 is on the dielectric layer 230 being disposed between grid 224 source electrodes 224 and drain electrode 246, and pixel electrode 260 is to be disposed in pixel region 212, and is electrically connected with drain electrode 246.
Display panel 300 comprises a first substrate 310, is disposed at the transparent electrode layer 320 on first substrate 310, and is disposed at the electronic ink material layer 330 between transparent electrode layer 320 and thin-film transistor array base-plate 200.Wherein, the material of transparent electrode layer 320 is for example indium tin oxide, indium-zinc oxide (indium zincoxide, IZO) or other electrically conducting transparent material.In electronic ink material layer 330, there are multiple microcapsules 332, and in each microcapsules 332, for example include two kinds of pigment of black and white and transparent fluid.Display panel 300 is attached on thin-film transistor array base-plate 200 by adhesion layer 334.Wherein change by the direction of an electric field between pixel electrode 260 and transparent electrode layer 320, can make pigment move up or down according to direction of an electric field, and then make each pixel of electronic ink display device present black or white.Produce the movement of pigment in extra electric field influence microcapsules 332 for fear of the second metal level 240 and transparent electrode layer 320, can be by changing the electric field intensity between thickness reduction the second metal level 240 and the transparent electrode layer 320 of the first resin bed 280.
The manufacturing process schematic diagram that Fig. 2 to Fig. 6 illustrate is thin-film transistor array base-plate 200 of the present invention.Please refer to Figure 1A and Figure 1B.
First, please refer to Fig. 2, on first substrate 220, form the first metal layer 220.In one embodiment, the material of first substrate 220 is for example glass, quartz or other suitable material.The material of the first metal layer 220 can be copper metal, chromium metal or other suitable conductive material.Generally can on first substrate 220, deposit the first metal layer of whole layer, recycling lithography operation defines the position of sweep trace 222 and grid 224.
Then, please refer to Fig. 3, utilize for example plasma enhanced chemical vapor deposition (PECVD) operation to form a dielectric layer 230 on the first metal layer 220, and cover whole the first metal layer 220, using the insulation as different metal interlayer.Generally can utilize nitride, for example silicon nitride (SiN
x) be used as the material of dielectric layer 230.
Afterwards, please refer to Fig. 4, recycle for example plasma enhanced chemical vapor deposition operation and lithography operation, in dielectric layer 230 tops, on the position of corresponding grid 224, define a channel layer 250, and form an ohmic contact layer in channel layer 250 surfaces, wherein channel layer 250 is an amorphous silicon layer.Utilize subsequently for example physical vapour deposition (PVD) (PVD) operation to form one second metal level 240 in the lip-deep ohmic contact layer of channel layer 250 and dielectric layer 230 tops, and can utilize the micro-shadow of for example photoresist and wet etching operation patterning the second metal level 240, and in the second metal level 240, form an opening 248 and expose channel layer 250.According to this, the second metal level 240 of opening 248 both sides is defined as respectively data line 242 and is electrically connected with data line 242 source electrode 244 and drain electrode 246.Generally can utilize copper metal, chromium metal or other suitable conductive material to form the second metal level 240.
Then, as shown in Figure 5, using the second metal level 240 of defined data line 242, source electrode 244 and drain electrode 246 positions as mask, utilize for example dry ecthing operation that the part ohmic contact layer being exposed in opening 248 is removed, to complete thin film transistor (TFT).Then cover thereon, the protective seam 270 being for example made up of silicon nitride to be to avoid the corrosion of aqueous vapor, and one first resin bed 280 reduces the electric field that the second metal level 240 and transparent electrode layer 320 produce.Follow and utilize lithography to form a contact hole 282 in protective seam 270 and the first resin bed 280; this contact hole 282 connects protective seam 270 and the first resin bed 280; expose drain electrode 246 subregion, more then cover as the transparent electrode material of the indium tin oxide of pixel electrode layer 260 thereon.This pixel electrode layer 260 can be electrically connected to drain electrode 246 by this contact hole 282.
Finally, as shown in Figure 6, one second resin bed 290 is formed on pixel electrode layer 260.Wherein the second resin bed 290 is dried after being for example formed on pixel electrode layer 260 in the mode of rotary coating.The similar cushion of effect of this second resin bed 290; can absorb impact with the transistor arrangement on protective film transistor (TFT) array substrate 200; for example; in the time that display panel 300 suffers external force collision, disperse this impact by this second resin bed 290, can avoid because single demonstration point suffers excessive shock; be expressed to thin-film transistor array base-plate 200; and damage the transistor arrangement of below, cause corresponding microcapsules 332 by driven, to affect display quality.
In one embodiment, the second resin bed 290 is to be formed on thin-film transistor array base-plate 200 comprehensively, that is patterning the second resin bed 290 not, make sweep trace 222, data line 242, pixel electrode 260 and thin-film transistor structure all cover the second resin bed 290 belows.In another embodiment, the second resin bed 290 is that correspondence is formed on pixel electrode layer 260, and as shown in Figure 7, the second resin bed 290 is to be formed on thin-film transistor array base-plate 200 with square array structure, and does not cover sweep trace 222 and data line 242.In other words, in each pixel region, the second resin bed 290 is that whole face is laid on pixel electrode layer 260, makes corresponding pixel electrode 260 and thin-film transistor structure all cover the second resin bed 290 belows.In an embodiment again, the second resin bed 290 is that correspondence is formed on sweep trace 222 and data line 242, as shown in Figure 8, the second resin bed 290 is to be formed on thin-film transistor array base-plate 200 with groined type structure, cover sweep trace 222 and data line 242, and do not cover pixel electrode layer 260.So the structure of the second resin bed 290 of the present invention is not limited with above-mentioned, for example the second resin bed 290 also can be formed by multiple island structures, and the position of each island structure on thin-film transistor array base-plate 200 can be evenly distributed and unrestricted, and the outward appearance of each island structure can be square bulk, rhombus bulk, circular bulk, polygon row bulk etc.
Wherein, the dried film thickness of the second resin bed 290 rotary coating is about 0.5 to 10 μ m in one embodiment.And the second resin bed 290 can use eurymeric or negative type photoresist to form.In another embodiment, the second resin bed 290 can use acrylic acid (Acrylic) resin or resin and silica gel (Silica gel) hybrid material.In an embodiment again, the second resin bed 290 materials are ethylene-vinyl acetate copolymer (Ethylene-VinylAcetate copolymer, EVA).In other embodiments, the second resin bed 290 materials also can be resin and inorganic material, for example silicon, silicon dioxide, titania or nano material, hybrid material.
Comprehensive above-mentioned saying, the present invention becomes separately one second resin bed on pixel electrode, in the time that display panel suffers external force collision, this second resin bed dispersibles this impact, avoid, because single demonstration point suffers excessive shock, being expressed to thin-film transistor array base-plate, and damaging the transistor arrangement of below, cause corresponding microcapsules by driven, to affect display quality.
Although the present invention discloses as above with embodiment; but it is not in order to limit the present invention; anyly be familiar with this operator; without departing from the spirit and scope of the present invention; when making the various changes that are equal to or replacement, therefore protection scope of the present invention is when being as the criterion of defining depending on accompanying the application's claim scope.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010257221.9A CN102375282B (en) | 2010-08-11 | 2010-08-11 | Electronic paper display device and manufacturing method thereof |
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| CN201010257221.9A CN102375282B (en) | 2010-08-11 | 2010-08-11 | Electronic paper display device and manufacturing method thereof |
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| CN102375282B true CN102375282B (en) | 2014-09-24 |
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| CN106298647B (en) | 2016-08-31 | 2017-12-19 | 京东方科技集团股份有限公司 | A kind of array base palte and preparation method thereof, display panel and preparation method thereof |
| CN114924451A (en) * | 2021-02-02 | 2022-08-19 | 元太科技工业股份有限公司 | Electrophoretic display device and method of manufacturing the same |
| CN116449627B (en) * | 2023-04-20 | 2024-09-10 | 惠科股份有限公司 | Display device, manufacturing method thereof and electronic equipment |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1908794A (en) * | 2005-08-01 | 2007-02-07 | Nec液晶技术株式会社 | Color electronic paper display device |
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| JP4413452B2 (en) * | 2001-05-30 | 2010-02-10 | パナソニック株式会社 | Semiconductor device and manufacturing method thereof |
| JP3953027B2 (en) * | 2003-12-12 | 2007-08-01 | ソニー株式会社 | Semiconductor device and manufacturing method thereof |
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| CN1908794A (en) * | 2005-08-01 | 2007-02-07 | Nec液晶技术株式会社 | Color electronic paper display device |
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