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CN102376276B - Active light sensing pixel, active light sensing array and light sensing method - Google Patents

Active light sensing pixel, active light sensing array and light sensing method Download PDF

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Publication number
CN102376276B
CN102376276B CN2010102507351A CN201010250735A CN102376276B CN 102376276 B CN102376276 B CN 102376276B CN 2010102507351 A CN2010102507351 A CN 2010102507351A CN 201010250735 A CN201010250735 A CN 201010250735A CN 102376276 B CN102376276 B CN 102376276B
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photo
sensing
transistor
node
terminal
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CN102376276A (en
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贡振邦
江文任
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Abstract

The invention provides an active light sensing pixel, an active light sensing array and a light sensing method, wherein the active light sensing pixel comprises: a two-terminal photo-sensing transistor and a driving transistor. The two-terminal photo-sensing transistor has a first terminal coupled to the first node, a second terminal connected to the selection signal line, and a control terminal connected to the first node. The driving transistor has a first terminal coupled to the first reference voltage, a second terminal coupled to the output signal line, and a control terminal connected to the first node.

Description

Active light sensing pixel, active light sensing array and light sensing method
Technical field
The invention relates to display, particularly relevant for the display that uses active light sensing pixel, wherein active light sensing pixel is carried out simultaneously exposure and reads when selecting signal wire to be selected.
Background technology
In recent years, e-book (E-books) is gradually by development commercialization.A kind of feasible display framework of e-book is the display framework that uses Thin Film Transistor-LCD (TFT-LCD).In other words, e-book can be by electronic package (for example TFT or optical sensor) be set in lower plate (backplane) show image.In order will on the display screen of e-book, to mark, e-book is necessary can sensor light.Take e-book with light sensing function as example, because optical sensor is arranged on lower plate, so penetrability is not good.Therefore, the shortcoming of the known electric philosophical works be need to be very long time shutter could on the display screen (display screen) of e-book, mark.
Therefore, need a kind of active light sensing pixel badly, make the e-book can be rapidly by ground mark.
Summary of the invention
Therefore, the object of the present invention is to provide a kind of active light sensing pixel, active light sensing array and light sensing method.
The invention provides a kind of active light sensing pixel, comprising: both-end point light sensing transistor and driving transistors.Both-end point light sensing transistor has that one first end points is coupled to first node, the second end points is connected in the selection signal wire, and controls end points and be connected in first node.Driving transistors has that the first end points is coupled to the first reference voltage, the second end points is coupled to output signal line, and controls end points and be connected in first node.
The invention provides a kind of active light sensing array, comprising: a plurality of signals are selected line, a plurality of output signal line and a plurality of active light sensing pixel.Each of active light sensing pixel comprises: both-end point light sensing transistor and driving transistors.Both-end point light sensing transistor has that the first end points is coupled to first node, the second end points is coupled to corresponding selection signal wire, and controls end points and be connected in first node.Driving transistors has that the first end points is coupled to the first reference voltage, the second end points is coupled to corresponding output signal line, and controls end points and be connected in first node.
The present invention also provides a kind of light sensing method, is applied to active light sensing pixel, and active light sensing pixel comprises: both-end point light sensing transistor and driving transistors.Both-end point light sensing transistor has the first end points and is coupled to first node, the second end points and is coupled to and selects signal wire and control end points to be connected in first node.Driving transistors has that the first end points is coupled to the first reference voltage, the second end points is coupled to output signal line, and controls end points and be connected in first node.The light sensing method comprises the following steps: to provide the first voltage quasi position to selecting signal wire at exposure and readout interval, makes both-end point light sensing transistor as photoresistance; And, when both-end point light sensing transistor receives incident light, produce the light sensing electric current first node is charged, make driving transistors according to the voltage quasi position on first node and conducting outputs current to output signal line in order to generation.
The invention provides active light sensing pixel and its light sensing method.Compared to known passive type light sensing pixel, light sensing pixel of the present invention has higher signal to noise ratio (S/N ratio) and driving force, therefore can meet the demand of large area display.In addition, the control end of driving transistors of the present invention is to be connected to its second end points, so display can not be activated the impact of transistor critical voltage change.Light sensing pixel of the present invention and array can be arranged at the lower plate of display, and replace known Charged Coupled Device (charge coupled device, CCD) optical sensor and CMOS optical sensor.
The accompanying drawing explanation
The present invention can follow appended accompanying drawing and be understood with embodiment, and appended accompanying drawing is also the part of embodiment.Known skill person should be able to know that the present patent application the scope of the claims should be assert to include embodiments of the invention and modification thereof largo, wherein:
Figure 1A is the diagram of both-end point light sensing transistor of the present invention the first operator scheme;
Figure 1B shows when both-end point light sensing transistor operates in the first operator scheme, the relation of the voltage of the first end points and light sensing electric current.
Fig. 2 A is the diagram of both-end point light sensing transistor of the present invention the second operator scheme;
Fig. 2 B shows when both-end point light sensing transistor operates in the second operator scheme, the relation of double-pointed voltage and diode current.
Fig. 3 is the diagram of the active light sensing pixel of the present invention;
Fig. 4 is the sequential chart that Fig. 3 selects signal wire;
Fig. 5 is another schematic diagram of the active light sensing pixel of the present invention;
Fig. 6 is diagram and the corresponding sequential chart of signal wire of the active light sensing array of the present invention;
Fig. 7 is diagram and the corresponding sequential chart of signal wire of the active light sensing of the present invention and array of display.
[primary clustering symbol description]
Q 1～both-end point light sensing transistor;
Q 2～driving transistors;
Q 3～switching transistor;
Hv～incident light;
V H～high voltage;
V L～low-voltage;
I Photo, I ' Photo～light sensing electric current;
I Diode, I ' Diode～diode current;
U 11, U 12, U 13, U 21, U 22, U 23, U 31, U 32, U 33, U 41, U 42, U 43～active light sensing and display pixel;
P 11, P 12, P 13, P 21, P 22, P 23, P 31, P 32, P 33, P 41, P 42, P 43～active light sensing pixel;
S 22～display pixel;
Sel_1-Sel_4～selection signal wire;
Out_0-Out_3～output signal line;
Data_1-data_4～data signal line;
V Ref1The～the first reference voltage;
V Ref2The～the second reference voltage;
V Ref3The～the three reference voltage;
X 1～first node;
V X1, V N1, V N2～voltage;
V GH～high levle driving voltage;
V GL～low level driving voltage;
V Th_Q1～critical voltage;
T 1～the period 1;
T 2～second round;
C Sensitivity～sensitivity adjustment electric capacity;
C LC～liquid crystal capacitance;
M Photo-sensing～light sensing array;
M Sensing-display～light sensing and array of display;
N 1: the first end points;
N 2: the second end points;
50～driving circuit;
51～sensing circuit;
52～data drive circuit.
Embodiment
Figure 1A is the schematic diagram that both-end point light sensing transistor of the present invention operates in one first operator scheme (first operation mode).In the present embodiment, both-end point light sensing transistor Q 1For N-type hydrogenation non crystal silicon film transistor (N-type a-Si:H TFT), but be not limited to this.Both-end point light sensing transistor Q 1Has the first end points N 1, the second end points N 2, and control end points.Be noted that both-end point light sensing transistor Q 1The control end points be to be connected to the second end points N 2, and form whereby both-end point light sensing transistor Q 1Two end points, i.e. the first end points N 1Be connected in the second end points N 2The control end points.In the first operator scheme, both-end point light sensing transistor Q 1The first end points N 1Be applied in high voltage V H, and the second end points N 2Be applied in low-voltage V L.As incident light hv, shine the both-end point light sensing transistor Q that operates in the first operator scheme 1The time, both-end point light sensing transistor Q 1Can produce the light sensing electric current I PhotoBy the first end points N 1Flow to the second end points N 2.Generally speaking, light sensing electric current I PhotoSize be by both-end point light sensing transistor Q 1Area and the material behavior of semiconductor layer determine.In addition, light sensing electric current I PhotoSize also can be determined by the intensity of incident light hv; In other words, if the incident light intensity is stronger, light sensing electric current I PhotoAlso larger.Therefore, both-end point light sensing transistor Q 1In the first operator scheme as a photoresistance (photosensitive resistor).In another embodiment, both-end point light sensing transistor Q 1Also can be P type silicon thin film transistor (P-type Si TFT), but be not limited to this.In other embodiments, both-end point light sensing transistor Q 1Also can be two-carrier junction transistor (BJT) or other switch module.
Figure 1B shows both-end point light sensing transistor Q 1While operating in the first operator scheme, the voltage VN1 of the first end points and light sensing electric current I PhotoRelation.As shown in Figure 1B, when not having incident light hv to irradiate (rhombus dotted line), the light sensing electric current I ' PhotoIt is zero (being called again cut-off region).On the contrary, when having incident light hv to irradiate (square dotted line), with known field-effect transistor (FET) similarly, the light sensing electric current I PhotoPlay first meeting and present linear increasing, then increasing degree diminishes (being called again triode region) gradually, and finally levels off to saturated (being called again saturation region).In one embodiment, if both-end point light sensing transistor Q 1By incident light, irradiated and the voltage V of the first end points N1For 16V, light sensing electric current I PhotoBe about the 7.5E-09 ampere; If both-end point light sensing transistor Q 1By incident light, do not irradiated and the voltage V of the first end points N1For 16V, light sensing electric current I ' PhotoIt is 0 ampere.As both-end point light sensing transistor Q 1While operating in the first operator scheme, by detected light current sensor I Photo, just can judge both-end point light sensing transistor Q 1Whether by incident light, irradiated.
Fig. 2 A is the schematic diagram that both-end point light sensing transistor of the present invention operates in one second operator scheme (second operation mode).Be similar to Figure 1A, both-end point light sensing transistor Q 1Control end also be connected to the second end points N 2.Compared to the first operator scheme, both-end point light sensing transistor Q 1The first end points N 1Be applied in low-voltage V L, and the second end points is applied in high voltage V H.Because both-end point light sensing transistor Q 1Control end and the second end points be coupled to high voltage V H(being commonly referred to " diode connection "), so in the second operator scheme, both-end point light sensing transistor Q 1As a diode, and produce diode current I Diode(namely forward On current) is by the second end points N 2Flow to the first end points N 1.
Fig. 2 B shows both-end point light sensing transistor Q 1While operating in the second operator scheme, double-pointed voltage V N2Relation with diode current.Be similar to known diode, both-end point light sensing transistor Q 1Diode current I DiodeOriginally be zero, then, after conducting, present the increase of index pattern.At both-end point light sensing transistor Q 1(V after conducting N2>10V), no matter whether there is incident light hv to irradiate, all exist diode current by the second end points N 2Flow to the first end points N 1.Be noted that incident light hv irradiates the diode current I of (square dotted line) DiodeGreater than not having incident light hv to irradiate the diode current I ' of (rhombus dotted line) Diode.In one embodiment, if both-end point light sensing transistor Q 1By incident light, irradiated and double-pointed voltage V N2For 15V, diode current I DiodeBe about the 1.0E-09 ampere.On the contrary, if both-end point light sensing transistor Q 1By incident light, do not irradiated and double-pointed voltage V N2For 15V, diode current I ' DiodeBe about the 0.5E-09 ampere.Therefore, the second operator scheme has two kinds of purposes, and the first is by the numerical value/size of detecting/judgement diode current, just can judge both-end point light sensing transistor Q 1Whether by incident light, irradiated.The second is to utilize diode current allow the second end points N 2To the first end points N 1Electric discharge.In general, because diode current I DiodeNumerical value much larger than the light sensing electric current I PhotoNumerical value (approximately large 1.0E+03～1.0E+04 the order of magnitude), so with respect in the first operator scheme, the light sensing electric current I PhotoTo the first end points N 1Charging process, in the second operator scheme, diode current I DiodeTo the second end points N 2Discharge process be faster.
Fig. 3 is the schematic diagram of the active light sensing pixel of the present invention.In the present embodiment, active light sensing pixel P 22Comprise both-end point light sensing transistor Q 1, and driving transistors Q 2.Active light sensing pixel P 22Be coupled to signal and select line Sel_2, and perpendicular to the output signal line Out_2 that selects signal wire Sel_2.
In Fig. 3, both-end point light sensing transistor Q 1Has the first end points N 1Be coupled to first node X 1, the second end points N 2Be coupled to and select signal wire Sel_2, and the control end points is connected in first node X 1.Driving transistors Q 2Have that the first end points is coupled to the first reference voltage Vref 1, the second end points is coupled to output signal line Out_2, and control end points and be connected in first node X 1.
The light sensing method of light sensing pixel of the present invention will be as described below.Fig. 4 shows the sequential chart of selecting signal wire, and first node X 1Voltage waveform, first node X wherein 1Voltage waveform be light sensing pixel P 22The situation of being irradiated by incident light hv.In Fig. 4, solid line represents respectively the sequential chart of scan signal line Sel_2, and dotted line represents as light sensing pixel P 22While by incident light hv, being irradiated, first node X 1Voltage V X1Waveform.
The transistorized operator scheme of both-end point light sensing below is discussed.At period 1 T 1(being commonly referred to exposure and readout interval), select the voltage quasi position of signal wire Sel_2 to be pulled to higher than first node X 1Voltage quasi position (as high levle driving voltage V GH), and light sensing pixel P 22By incident light, irradiated both-end point light sensing transistor Q 1As photoresistance and according to incident light hv, produce the light sensing electric current I Photo, and the light sensing electric current I PhotoBy first node X 1Charge to the voltage V of high levle X1.As voltage V X1Higher than driving transistors Q 2Critical voltage the time, driving transistors Q 2Be switched on and produce and output current to output signal line Out_2, so period 1 T 1It is also readout interval.On the other hand, at period 1 T 1, select the voltage quasi position of signal wire Sel_2 to be pulled to higher than first node X 1Voltage quasi position (as high levle driving voltage V GH), but light sensing pixel P 22By incident light, do not irradiated both-end point light sensing transistor Q 1Can not produce the light sensing electric current I Photo.As can be known that use here is both-end point light sensing transistor Q by above-mentioned discussion 1The first operator scheme.Therefore, as both-end point light sensing transistor Q 1During as photoresistance, by driving transistors Q 2Critical voltage be designed to the light sensing electric current I of being irradiated by incident light less than (or equaling) PhotoThe corresponding voltage that produces on first node, therefore make driving transistors Q 2By the light sensing electric current I PhotoConducting also produces output current.Therefore, by judging light sensing pixel, whether produce output current, just can judge whether it is irradiated by incident light hv.
At T second round 2(weighing accommodation cycle usually), select the voltage quasi position of signal wire Sel_2 to be pulled to lower than first node X 1Voltage quasi position (as low level driving voltage V GL), both-end point light sensing transistor Q 1As diode and by diode current I DiodeAnd by first node X 1Voltage V X1" rapidly " be discharged to and select signal wire Sel_2.As first node X 1Voltage V X1Be discharged to lower than driving transistors Q 2Critical voltage the time, driving transistors Q 2Cut-off.
At T second round 2, driving transistors Q 2Be cut off, so even incident light hv irradiates both-end point light sensing transistor Q 1, both-end point light sensing transistor Q 1Can not produce the light sensing electric current yet.Be noted that the voltage V of the present invention to first node X1Replacement be mainly to put light sensing transistor Q by both-end 1Diode current I Diode(i.e. the second operator scheme) and complete.In the present embodiment, select the high levle driving voltage V of signal wire GHFor 10V, select the low level driving voltage V of signal wire GLFor 0V.First node X 1Voltage waveform V X1Than low level driving voltage V GLAt least high V Th_Q1, V wherein Th_Q1For both-end point light sensing transistor Q 1Critical voltage.
Fig. 5 is the schematic diagram of the active light sensing pixel of the present invention.The present embodiment is similar to the embodiment of Fig. 3 substantially, and for the purpose of simplifying the description, the sequential chart of its circuit connecting mode and selection signal wire repeats no more.Be noted that active light sensing pixel P 22Also comprise the sensitivity adjustment capacitor C Sensitivity, have the first end points and be connected in first node X 1, and the second end points is connected in the second reference voltage V Ref2.
The effect of sensitivity adjustment capacitor C sensitivity then is described.As mentioned above, by adjusting driving transistors Q 2Grid voltage (be first node X 1Voltage V X1), just can judge active light sensing pixel P 22Whether entered irradiation.In the present embodiment, when the light sensing electric current I Photo(Δ V when very large X1Very large), use and have the sensitivity adjustment capacitor C of larger capacitance SensitivityWhen the light sensing electric current I Photo(Δ V when very little X1Very little), use the sensitivity adjustment capacitor C with smaller capacitive value Sensitivity.Therefore, even incident light is very faint, make the light sensing electric current I PhotoBecome very little, by using the less sensitivity adjustment capacitor C of capacitance Sensitivity, still can sensing faint enter hv.Whereby, the present invention has higher signal to noise ratio (S/N ratio).
Fig. 6 is diagram and the corresponding sequential chart of signal wire of the active light sensing array of the present invention.Active light sensing array M Photo-sensingComprise a plurality of signals selection signal wire Sel_1-Sel_4, a plurality of output signal line Out_1-Out_3, a plurality of active light sensing pixel P 11-P 43, driving circuit 50, and sensing circuit 51.In the present embodiment, a plurality of active light sensing pixel P 11-P 43Each be similar to substantially the embodiment of Fig. 5, but be not limited to this.In certain embodiments, active light sensing pixel P 11-P 43Each also can be similar to the embodiment of Fig. 3.For the purpose of simplifying the description, the sequential chart of its circuit connecting mode and selection signal wire Sel_1-Sel_4 repeats no more.Sequentially activation of driving circuit 50 selects signal to a plurality of selection signal wire Sel_1-Sel_4.For example, at period 1 T 1(exposure and readout interval), select the voltage quasi position of signal wire Sel_2 to be pulled to higher than first node X 1Voltage quasi position (as high levle driving voltage V GH), both-end point light sensing transistor Q 1As photoresistance and according to incident light hv, produce the light sensing electric current I Photo, and the light sensing electric current I PhotoTo first node X 1Charge to the voltage V of high levle X1.In this embodiment, both-end point light sensing transistor Q 1While doing by incident light hv, not irradiated, can not produce the light sensing electric current I Photo, to first node X 1Charging.As first node X 1On voltage be recharged and higher than driving transistors Q 2Critical voltage the time, driving transistors Q 2Be switched on and produce and output current to output signal line Out_2, then sensing circuit 51 can determine active light sensing pixel P by the numerical value/stool and urine of detecting/judgement output current 22Whether by incident light hv, irradiated.Therefore, period 1 T 1It is also readout interval.Then, at T second round 2, select the voltage quasi position of signal wire Sel_2 to be pulled to lower than first node X 1Voltage quasi position (as low level driving voltage V GL), driving transistors Q 2By both-end, put light sensing transistor Q 1Diode current I DiodeVoltage V by first node X1Reset, make driving transistors Q 2Be cut off.Be noted that when selecting signal wire Sel_2 be period 1 T 1The time, selecting signal wire Sel_1, Sel_3 and Sel_4 is T second round 2, in other words, select the corresponding scan columns of signal wire Sel_1, Sel_3 and Sel_4 to end, so select the adjacent selection signal wire Sel_1 of signal wire Sel_2 and Sel_3 can not cause interference to selecting signal wire Sel_2.In other embodiments, active light sensing array M Photo-sensingComprise selection signal wire, the scan signal line more than three more than four, and the light sensing pixel more than 12.Known skill person is when according to the demand of product, designing active light sensing array M Photo-sensing.
Fig. 7 is diagram and the corresponding sequential chart of signal wire of the active light sensing of the present invention and array of display.Active light sensing and array of display M Sensing-displayComprise a plurality of selection signal wire Sel_1-Sel_4, a plurality of output signal line Out_0-Out_3, a plurality of data signal line data_1-data_4, a plurality of active light sensing and display pixel U 11-U 43, driving circuit 50, sensing circuit 51, and data drive circuit 52.In Fig. 7, active light sensing and display pixel U 11-U 43Each include an active light sensing pixel (P for example 22) and a display pixel (S for example 22), wherein each active light sensing pixel can be set up with the active light sensing pixel of previous embodiment of the present invention, does not repeat them here.With reference to display pixel S 22, display pixel S 22Comprise a switching transistor Q 3An and liquid crystal capacitance C LC, switching transistor Q wherein 3Have one first end points and be coupled to the second data line data_2, one second end points, and one control end points and be coupled to second and select signal wire Sel_2, and liquid crystal capacitance C LCHave one first end points and be connected in switching transistor Q 3The second end points, and one second end points is coupled to the 3rd reference voltage V Ref3.
The operation of active light sensing and array of display below is discussed.For example, at period 1 T 1, select the voltage quasi position of signal wire Sel_1 to be pulled to higher than light sensing pixel P 22First node X 1Voltage quasi position (as high levle driving voltage V GH), both-end point light sensing transistor Q 1As photoresistance and according to incident light hv, produce the light sensing electric current I Photo, and the light sensing electric current I PhotoTo first node X 1Charge to the voltage V of high levle X1.As first node X 1On voltage higher than driving transistors Q 2Critical voltage, driving transistors Q 2Be switched on and produce and output current to output signal line Out_2, then sensing circuit 51 can determine active light sensing pixel P by the numerical value/stool and urine of detecting/judgement output current 22Whether by incident light hv, irradiated.Therefore, period 1 T 1It is also readout interval.In this embodiment, as first node X 1On voltage V X1Higher than driving transistors Q 2Critical voltage the time, driving transistors Q 2Can conducting.On the contrary, as both-end point light sensing transistor Q 1While by incident light, not irradiated, can not produce the light sensing electric current I Photo, first node X 1On voltage V X1Can be lower than driving transistors Q 2Critical voltage, therefore driving transistors Q 2Can conducting.
Then, at T second round 2, select the voltage quasi position of signal wire Sel_1 to be pulled to lower than first node X 1Voltage quasi position (as low level driving voltage V GL), the voltage V of first node X1To put light sensing transistor Q by both-end 1Diode current I DiodeBe reset, make driving transistors Q 2Be cut off.At this moment, because select also driven circuit 50 activations of signal wire Sel_2, so display pixel S 22Switching transistor Q 3Conducting.Therefore, display pixel S 22According to the data-signal that is received by the second data signal line data_2, and show active light sensing and display pixel U 22By incident light, whether irradiated.
The invention provides active light sensing pixel and its light sensing method.Compared to known passive type light sensing pixel, light sensing pixel of the present invention has higher signal to noise ratio (S/N ratio) and driving force, therefore can meet the demand of large area display.In addition, driving transistors Q of the present invention 1Control end be to be connected to its second end points, so display can not be activated transistor Q 1The impact of critical voltage change.Light sensing pixel of the present invention and array can be arranged at the lower plate of display, and replace known Charged Coupled Device (charge coupled device, CCD) optical sensor and CMOS optical sensor.
Although the present invention discloses as above with preferred embodiment, not in order to limit the present invention.In addition, known skill person should be able to know that the present patent application the scope of the claims should be assert to include all embodiment of the present invention and modification thereof largo.

Claims (15)

1.一种主动式光感测像素，其特征在于，包括：1. An active light sensing pixel, characterized in that it comprises: 一双端点光感测晶体管，具有一第一端点耦接于一第一节点、一第二端点连接于一选择信号线，以及一控制端点连接于上述第一节点；以及a double-terminal photo-sensing transistor, with a first terminal coupled to a first node, a second terminal connected to a selection signal line, and a control terminal connected to the first node; and 一驱动晶体管，具有一第一端点耦接于一第一参考电压、一第二端点耦接于一输出信号线，以及一控制端点连接于上述第一节点；A drive transistor, having a first terminal coupled to a first reference voltage, a second terminal coupled to an output signal line, and a control terminal connected to the first node; 其中上述选择信号线除了连接至上述双端点光感测晶体管的上述第二端点外，还连接至一显示像素的一开关晶体管，并且提供一驱动电压至上述显示像素的上述开关晶体管。In addition to being connected to the second terminal of the double-terminal photo-sensing transistor, the selection signal line is also connected to a switch transistor of a display pixel, and provides a driving voltage to the switch transistor of the display pixel. 2.根据权利要求1所述的主动式光感测像素，其特征在于，还包括一灵敏度调整电容，具有一第一端点连接至上述第一节点，以及一第二端点连接至一第二参考电压。2. The active photo-sensing pixel according to claim 1, further comprising a sensitivity adjustment capacitor having a first terminal connected to the first node, and a second terminal connected to a second reference voltage. 3.根据权利要求1所述的主动式光感测像素，其特征在于，在一曝光及读出周期，上述选择信号线上的电压准位被拉至高于上述第一节点上的电压准位，上述双端点光感测晶体管作为一光敏电阻并根据一入射光而产生一光感测电流，并且上述光感测电流对上述第一节点充电，使得上述驱动晶体管被导通并产生一输出电流至上述输出信号线。3. The active photo-sensing pixel according to claim 1, wherein during an exposure and readout period, the voltage level on the selection signal line is pulled to be higher than the voltage level on the first node , the above-mentioned two-terminal photo-sensing transistor is used as a photosensitive resistor and generates a photo-sensing current according to an incident light, and the photo-sensing current charges the first node, so that the above-mentioned driving transistor is turned on and generates an output current to the above output signal line. 4.根据权利要求3所述的主动式光感测像素，其特征在于，在接续于上述曝光及读出周期的一重置周期，上述选择信号线上的电压准位被拉至低于上述第一节点上的电压准位，上述双端点光感测晶体管作为一二极管，并产生一二极管电流，使得上述第一节点被放电并且上述驱动晶体管被截止。4. The active photo-sensing pixel according to claim 3, wherein in a reset period following the exposure and readout period, the voltage level on the selection signal line is pulled to be lower than the The voltage level on the first node, the two-terminal photo-sensing transistor acts as a diode, and generates a diode current, so that the first node is discharged and the driving transistor is turned off. 5.根据权利要求1所述的主动式光感测像素，其特征在于，上述双端点光感测晶体管为N型氢化非晶硅薄膜晶体管。5. The active light-sensing pixel according to claim 1, wherein the double-terminal light-sensing transistor is an N-type hydrogenated amorphous silicon thin film transistor. 6.一种主动式光感测阵列，其特征在于，包括：6. An active photosensor array, characterized in that it comprises: 多个信号选择线；Multiple signal selection lines; 多个输出信号线；以及a plurality of output signal lines; and 多个主动式光感测像素，上述主动式光感测像素的每一个包括：A plurality of active light-sensing pixels, each of the above-mentioned active light-sensing pixels includes: 一双端点光感测晶体管，具有一第一端点耦接于一第一节点、一第二端点耦接于一相应的选择信号线，以及一控制端点连接于上述第一节点；以及a double-terminal photo-sensing transistor having a first terminal coupled to a first node, a second terminal coupled to a corresponding selection signal line, and a control terminal connected to the first node; and 一驱动晶体管，具有一第一端点耦接于一第一参考电压、一第二端点耦接于一相应的输出信号线，以及一控制端点连接于上述第一节点；A drive transistor, having a first terminal coupled to a first reference voltage, a second terminal coupled to a corresponding output signal line, and a control terminal connected to the first node; 其中上述选择信号线除了连接至上述双端点光感测晶体管的上述第二端点外，还连接至一显示像素的一开关晶体管，并且提供一驱动电压至上述显示像素的上述开关晶体管。In addition to being connected to the second terminal of the double-terminal photo-sensing transistor, the selection signal line is also connected to a switch transistor of a display pixel, and provides a driving voltage to the switch transistor of the display pixel. 7.根据权利要求6所述的主动式光感测阵列，其特征在于，上述主动式光感测像素的每一个还包括一灵敏度调整电容，具有一第一端连接至上述第一节点，以及一第二端连接至一第二参考电压。7. The active photo-sensing array according to claim 6, wherein each of the active photo-sensing pixels further comprises a sensitivity adjustment capacitor having a first end connected to the first node, and A second terminal is connected to a second reference voltage. 8.根据权利要求6所述的主动式光感测阵列，其特征在于，在一曝光及读出周期，上述相应的选择信号线上的电压准位被拉至高于上述第一节点上的电压准位，上述双端点光感测晶体管作为一光敏电阻并根据一入射光而产生一光感测电流，并且上述光感测电流对上述第一节点充电，使得上述驱动晶体管被导通并产生一输出电流至上述相应的输出信号线。8. The active photo-sensing array according to claim 6, wherein during an exposure and readout period, the voltage level on the corresponding selection signal line is pulled higher than the voltage on the first node level, the above-mentioned two-terminal photo-sensing transistor acts as a photosensitive resistor and generates a photo-sensing current according to an incident light, and the photo-sensing current charges the first node, so that the above-mentioned driving transistor is turned on and generates a photo-sensing current. Output current to the above corresponding output signal lines. 9.根据权利要求8所述的主动式光感测阵列，其特征在于，在接续于上述曝光及读出周期的一重置周期，上述相应的选择信号线上的电压准位被拉至低于上述第一节点上的电压准位时，上述双端点光感测晶体管作为一二极管，并产生一二极管电流，使得上述第一节点被放电并且上述驱动晶体管被截止。9. The active photo-sensing array according to claim 8, wherein in a reset period following the exposure and readout period, the voltage level on the corresponding selection signal line is pulled to low At the voltage level on the first node, the two-terminal photo-sensing transistor acts as a diode and generates a diode current, so that the first node is discharged and the driving transistor is turned off. 10.根据权利要求6所述的主动式光感测阵列，其特征在于，上述双端点光感测晶体管为N型氢化非晶硅薄膜晶体管。10. The active photo-sensing array according to claim 6, wherein the two-terminal photo-sensing transistor is an N-type hydrogenated amorphous silicon thin film transistor. 11.一种光感测方法，其特征在于，应用于一主动式光感测像素，上述主动式光感测像素包括一双端点光感测晶体管，具有一第一端点耦接于一第一节点、一第二端点耦接于一选择信号线以及一控制端点连接于上述第一节点，以及一驱动晶体管，具有一第一端点耦接于一第一参考电压、一第二端点耦接于一输出信号线，以及一控制端点连接于上述第一节点，上述选择信号线除了连接至上述双端点光感测晶体管的上述第二端点外，还连接至一显示像素的一开关晶体管，上述光感测方法包括下列步骤：11. A photo-sensing method, characterized in that it is applied to an active photo-sensing pixel, and the above-mentioned active photo-sensing pixel includes a double-terminal photo-sensing transistor with a first terminal coupled to a first node, a second terminal coupled to a selection signal line and a control terminal connected to the first node, and a drive transistor, with a first terminal coupled to a first reference voltage and a second terminal coupled to An output signal line and a control terminal are connected to the first node, the selection signal line is not only connected to the second terminal of the double-terminal photo-sensing transistor, but also connected to a switch transistor of a display pixel, the above-mentioned The light sensing method includes the following steps: 在一曝光及读出周期，提供一第一电压准位至上述选择信号线，使得上述双端点光感测晶体管作为一光敏电阻；In an exposure and readout period, providing a first voltage level to the selection signal line, so that the two-terminal photo-sensing transistor acts as a photoresistor; 当上述双端点光感测晶体管接收到一入射光时，产生一光感测电流对上述第一节点充电，使得上述驱动晶体管根据上述第一节点上的电压准位而导通，用以产生一输出电流至上述输出信号线;以及When the above-mentioned two-terminal photo-sensing transistor receives an incident light, it generates a photo-sensing current to charge the above-mentioned first node, so that the above-mentioned driving transistor is turned on according to the voltage level on the above-mentioned first node to generate a output current to the above output signal line; and 经由上述选择信号线，提供一驱动电压至上述显示像素的上述开关晶体管。A driving voltage is provided to the switch transistor of the display pixel via the selection signal line. 12.根据权利要求11所述的光感测方法，其特征在于，还包括提供在接续于上述曝光及读出周期的一重置周期，提供一第二电压准位至上述选择信号线，使得上述双端点光感测晶体管作为一二极管，产生一二极管电流，且根据上述二极管电流，上述第一节点会被放电并且上述驱动晶体管会被截止。12. The photo-sensing method according to claim 11, further comprising providing a second voltage level to the selection signal line during a reset period subsequent to the exposure and readout period, so that The two-terminal photo-sensing transistor acts as a diode to generate a diode current, and according to the diode current, the first node is discharged and the driving transistor is turned off. 13.根据权利要求11所述的光感测方法，其特征在于，上述第一电压准位高于上述第一节点上的电压准位。13. The light sensing method according to claim 11, wherein the first voltage level is higher than the voltage level on the first node. 14.根据权利要求11所述的光感测方法，其特征在于，上述第二电压准位低于上述第一节点上的电压准位。14. The light sensing method according to claim 11, wherein the second voltage level is lower than the voltage level on the first node. 15.根据权利要求11所述的光感测方法，其特征在于，上述双端点光感测晶体管为N型氢化非晶硅薄膜晶体管。15. The photo-sensing method according to claim 11, wherein the double-terminal photo-sensing transistor is an N-type hydrogenated amorphous silicon thin film transistor.
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