CN102394204B - Field electron emission source - Google Patents
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Abstract
一种场发射电子源,其包括一导电基体和一碳纳米管针尖。该碳纳米管针尖为一碳纳米管束状结构,该碳纳米管束状结构包括多个沿碳纳米管针尖轴向定向延伸且首尾相连的碳纳米管。该碳纳米管针尖具有一第一端以及与第一端相对的第二端,该碳纳米管针尖的第一端与该导电基体电连接,该碳纳米管针尖的第二端的顶部为一根突出的碳纳米管。
A field emission electron source includes a conductive substrate and a carbon nanotube needle point. The carbon nanotube tip is a carbon nanotube bundle structure, and the carbon nanotube bundle structure includes a plurality of carbon nanotubes extending along the axis direction of the carbon nanotube tip and connected end to end. The carbon nanotube tip has a first end and a second end opposite to the first end, the first end of the carbon nanotube tip is electrically connected to the conductive substrate, and the top of the second end of the carbon nanotube tip is a prominent carbon nanotubes.
Description
技术领域 technical field
本发明涉及一种场发射电子源,尤其涉及一种基于碳纳米管的场发射电子源。 The invention relates to a field emission electron source, in particular to a field emission electron source based on carbon nanotubes.
背景技术 Background technique
场发射电子源在低温或者室温下工作,与电真空器件中的热发射电子源相比具有能耗低、响应速度快以及低放电等优点,因此用场发射电子源替代电真空器件中的热发射电子源成为了人们研究的一个热点。 The field emission electron source works at low temperature or room temperature. Compared with the thermal emission electron source in the electric vacuum device, it has the advantages of low energy consumption, fast response speed and low discharge. Therefore, the field emission electron source is used to replace the thermal emission in the electric vacuum device. Electron sources have become a hotspot of research.
碳纳米管(Carbon Nanotube, CNT)是一种新型碳材料,由日本研究人员Iijima在1991年发现,请参见"Helical Microtubules of Graphitic Carbon", S. Iijima, Nature, vol.354, p56 (1991)。碳纳米管具有极优异的导电性能、良好的化学稳定性和大的长径比,且其具有几乎接近理论极限的尖端表面积(尖端表面积愈小,其局部电场愈集中),因而碳纳米管在场发射真空电子源领域具有潜在的应用前景。目前的研究表明,碳纳米管是已知的最好的场发射材料之一,它的尖端尺寸只有几纳米至几十纳米,具有低的开启电压,可传输极大的电流密度,并且电流稳定,使用寿命长。因而碳纳米管是一种极佳的点电子源,可应用在电子发射显示器、扫描电子显微镜(Scanning Electron Microscope)、透射电子显微镜(Transmission Electron Microscope)等设备的电子发射部件中。 Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher Iijima in 1991, see "Helical Microtubules of Graphitic Carbon", S. Iijima, Nature, vol.354, p56 (1991) . Carbon nanotubes have excellent electrical conductivity, good chemical stability and large aspect ratio, and they have a tip surface area that is almost close to the theoretical limit (the smaller the tip surface area, the more concentrated its local electric field), so carbon nanotubes in the field The field of emitting vacuum electron sources has potential application prospects. Current research shows that carbon nanotubes are one of the best known field emission materials. Its tip size is only a few nanometers to tens of nanometers, it has a low turn-on voltage, can transmit a large current density, and the current is stable. ,long lasting. Therefore, carbon nanotubes are an excellent source of point electrons, and can be used in electron emission components of electron emission displays, scanning electron microscopes (Scanning Electron Microscope), and transmission electron microscopes (Transmission Electron Microscope).
现有的碳纳米管场发射电子源一般包括一导电基体和一根碳纳米管,该碳纳米管的一端作为场发射尖端,碳纳米管的另一端与该导电基体电联接,请参见"Growth of single-walled Carbon nanotubes on the given Locations for AFM Tips", Wang Rui , Acta Physico-Chimica Sinica, vol.23, p565 (2007)。 Existing carbon nanotube field emission electron sources generally include a conductive substrate and a carbon nanotube, one end of the carbon nanotube is used as a field emission tip, and the other end of the carbon nanotube is electrically connected with the conductive substrate, see "Growth of single-walled Carbon nanotubes on the given Locations for AFM Tips", Wang Rui , Acta Physico-Chimica Sinica, vol. 23, p565 (2007).
但是,由于单根碳纳米管尺寸较小,在将单根的碳纳米管与导电基体电连接的过程中往往需要昂贵的设备原子力显微镜和扫描隧道显微镜的辅助,使得这种将单根碳纳米管与导电基体电联接所形成的场发射电子源的制备过程操作复杂,成本较高。这种由单根碳纳米管与基体电连接所组成的场发射电子源的结构,由于单根碳纳米管的尺寸较小,其与基体接触面积较小,导致碳纳米管与基体之间的结合力较小,容易脱落,难以承受较大的电场力,使这种场发射电子源的寿命较短。同样由于单根碳纳米管与导电基体的接触面积较小,碳纳米管在形成场发射电流时所产生的热量不易传播出去,这种场发射电子源所能承受的场发射电流较小。而且由于这种场发射电子源的制备过程操作复杂,成本较高,导致这种场发射电子源的成本较高。 However, due to the small size of a single carbon nanotube, the process of electrically connecting a single carbon nanotube to a conductive substrate often requires the assistance of expensive equipment atomic force microscope and scanning tunneling microscope, making this method of combining a single carbon nanotube The preparation process of the field emission electron source formed by the electrical connection of the tube and the conductive substrate is complex and costly. This field emission electron source structure is composed of a single carbon nanotube electrically connected to the substrate. Due to the small size of the single carbon nanotube, its contact area with the substrate is small, resulting in the gap between the carbon nanotube and the substrate. The binding force is small, it is easy to fall off, and it is difficult to withstand a large electric field force, so that the life of this field emission electron source is short. Also because the contact area between a single carbon nanotube and the conductive substrate is small, the heat generated by the carbon nanotube when forming a field emission current is not easy to spread out, and the field emission current that this field emission electron source can withstand is small. Moreover, because the preparation process of this field emission electron source is complex and expensive, the cost of this field emission electron source is relatively high.
因此,确有必要提供一种场发射电子源,该场发射电子源场发射性能好,可承受较大的电场力,寿命较长,且可承载较大的场发射电流。 Therefore, it is indeed necessary to provide a field emission electron source, which has good field emission performance, can withstand a large electric field force, has a long life, and can carry a large field emission current.
发明内容 Contents of the invention
一种场发射电子源,其包括一导电基体,该场发射电子源进一步包括一碳纳米管针尖,该碳纳米管针尖为一碳纳米管束状结构,该碳纳米管束状结构包括多个沿碳纳米管针尖轴向定向延伸且首尾相连的碳纳米管,该碳纳米管针尖具有一第一端以及与第一端相对的第二端,该碳纳米管针尖的第一端与该导电基体电连接,该碳纳米管针尖的第二端的顶部为一根突出的碳纳米管。 A field emission electron source, which includes a conductive substrate, the field emission electron source further includes a carbon nanotube needle point, the carbon nanotube needle point is a carbon nanotube bundle structure, and the carbon nanotube bundle structure includes a plurality of A carbon nanotube with a nanotube tip axially oriented and connected end to end, the carbon nanotube tip has a first end and a second end opposite to the first end, the first end of the carbon nanotube tip is electrically connected to the conductive substrate connected, the top of the second end of the carbon nanotube tip is a protruding carbon nanotube.
与现有技术相比较,该场发射电子源具有以下优点:其一,采用的碳纳米管针尖为由多个碳纳米管通过范德华力连接组成的一碳纳米管束状结构,其尖端只有一根碳纳米管,尖端处的碳纳米管被其他周围的碳纳米管通过范德华力牢牢固定,因此尖端的碳纳米管可以承受较大的电场力;其二,由于作为场发射尖端的碳纳米管通过碳纳米管束状结构与导电基体相连,碳纳米管针尖与导电基体的基础面积较大,因此场发射电流加热产生的热量也可以及时有效的通过其周围的碳纳米管传导出去,故该场发射电子源可以承载较大的场发射电流。 Compared with the prior art, the field emission electron source has the following advantages: First, the carbon nanotube tip used is a carbon nanotube bundle structure composed of a plurality of carbon nanotubes connected by van der Waals force, and the tip has only one Carbon nanotubes, the carbon nanotubes at the tip are firmly fixed by other surrounding carbon nanotubes through van der Waals force, so the carbon nanotubes at the tip can withstand a large electric field force; The carbon nanotube bundle structure is connected to the conductive substrate, and the base area of the carbon nanotube tip and the conductive substrate is relatively large, so the heat generated by field emission current heating can also be conducted out through the surrounding carbon nanotubes in a timely and effective manner, so the field The electron emitting source can carry a large field emission current.
附图说明 Description of drawings
图1是本技术方案实施例的场发射电子源的结构示意图。 Fig. 1 is a schematic structural diagram of a field emission electron source according to an embodiment of the technical solution.
图2是图1中碳纳米管针尖的结构示意图。 Fig. 2 is a schematic diagram of the structure of the carbon nanotube tip in Fig. 1 .
图3是本技术方案实施例的碳纳米管针尖的扫描电镜照片。 Fig. 3 is a scanning electron micrograph of the carbon nanotube tip of the embodiment of the technical solution.
图4是本技术方案实施例的碳纳米管针尖的透射电镜照片。 Fig. 4 is a transmission electron micrograph of the carbon nanotube tip of the embodiment of the technical solution.
图5是本技术方案实施例的场发射电子源的制备方法的流程图。 Fig. 5 is a flowchart of a method for manufacturing a field emission electron source according to an embodiment of the technical solution.
图6是本技术方案实施例的碳纳米管薄膜经有机溶剂处理后的照片。 Fig. 6 is a photo of the carbon nanotube film of the embodiment of the technical solution after being treated with an organic solvent.
图7是本技术方案实施例的碳纳米管线通电流加热装置示意图。 Fig. 7 is a schematic diagram of a carbon nanotube wire current heating device according to an embodiment of the technical solution.
图8是本技术方案实施例的碳纳米管线的示意图。 Fig. 8 is a schematic diagram of a carbon nanotube wire according to an embodiment of the technical solution.
图9是本技术方案实施例的碳纳米管线碳纳米管线熔断后的示意图。 Fig. 9 is a schematic diagram of the carbon nanotube wire of the embodiment of the technical solution after the carbon nanotube wire is fused.
图10是本技术方案实施例的碳纳米管线被加热到白炽状态时的照片。 Fig. 10 is a photo of the carbon nanotube wire of the embodiment of the technical solution when it is heated to an incandescent state.
图11是本技术方案实施例获得的碳纳米管针尖的拉曼光谱图。 Fig. 11 is a Raman spectrum diagram of the carbon nanotube tip obtained in the embodiment of the technical solution.
图12是本技术方案实施例将碳纳米管针尖设置于导电基体上的方法的流程示意图。 Fig. 12 is a schematic flowchart of a method for arranging carbon nanotube needle tips on a conductive substrate according to an embodiment of the technical solution.
图13是本技术方案实施例的涂敷有银胶的光纤的示意图。 Fig. 13 is a schematic diagram of an optical fiber coated with silver glue according to an embodiment of the technical solution.
图14是本技术方案实施例采用导电胶固定碳纳米管针尖的方法的流程示意图。 FIG. 14 is a schematic flowchart of a method for fixing carbon nanotube needle tips with conductive glue according to an embodiment of the technical solution.
图15是本技术方案实施例所提供的场发射电子源的场发射电压与电流的关系图。 Fig. 15 is a graph showing the relationship between field emission voltage and current of the field emission electron source provided by the embodiment of the technical solution.
具体实施方式 Detailed ways
以下将结合附图详细说明本技术方案场发射电子源及其制备方法。 The field emission electron source and its preparation method of the technical solution will be described in detail below in conjunction with the accompanying drawings.
请参阅图1、图2、图3及图4,本技术方案实施例提供一种场发射电子源10,其包括一碳纳米管针尖12和一导电基体14。 Referring to FIG. 1 , FIG. 2 , FIG. 3 and FIG. 4 , the embodiment of the technical solution provides a field emission electron source 10 , which includes a carbon nanotube tip 12 and a conductive substrate 14 .
所述的碳纳米管针尖12包括一第一端122及与第一端122相对的第二端124,该碳纳米管针尖12的第一端122与该导电基体14电连接,碳纳米管针尖12的第二端124用于发射电子。该碳纳米管针尖12的长度为0.01毫米至1毫米,直径为1微米至20微米。 The carbon nanotube tip 12 includes a first end 122 and a second end 124 opposite to the first end 122, the first end 122 of the carbon nanotube tip 12 is electrically connected to the conductive substrate 14, and the carbon nanotube tip 12 is electrically connected to the conductive substrate 14. The second end 124 of 12 is used to emit electrons. The carbon nanotube tip 12 has a length of 0.01 mm to 1 mm and a diameter of 1 micron to 20 microns.
所述碳纳米管针尖12为一碳纳米管束状结构,该碳纳米管束状结构包括多个沿碳纳米管针尖12轴向定向延伸且首尾相连的碳纳米管126,碳纳米管126之间通过范德华力相互紧密结合。碳纳米管针尖12的第二端124为一类圆锥形,碳纳米管针尖12第二端124的直径沿远离第一端122的方向逐渐减小,第二端124的顶端包括一根突出的碳纳米管126,该碳纳米管126即为电子发射端128。 The carbon nanotube tip 12 is a carbon nanotube bundle structure, and the carbon nanotube bundle structure includes a plurality of carbon nanotubes 126 extending along the axial direction of the carbon nanotube tip 12 and connected end to end, and the carbon nanotubes 126 pass through The van der Waals forces are tightly coupled with each other. The second end 124 of the carbon nanotube tip 12 is a kind of conical shape, the diameter of the second end 124 of the carbon nanotube tip 12 gradually decreases along the direction away from the first end 122, and the top of the second end 124 includes a protruding The carbon nanotube 126 , the carbon nanotube 126 is the electron emitting end 128 .
所述首尾相连的碳纳米管126为直径为0.5纳米-50纳米的单壁碳纳米管、直径为1纳米-50纳米的双壁碳纳米管、直径为1.5纳米-50纳米的多壁碳纳米管或其任意组合的混合物。该首尾相连的碳纳米管126的长度均为10微米-5000微米。该碳纳米管针尖12的第二端124的突出的碳纳米管126作为场发射电子源的电子发射端128,电子发射端128的长度为10微米-1000微米,直径小于5纳米,作为电子发射端128的碳纳米管126的长度与直径均小于碳纳米管针尖12中的其他碳纳米管126。 The carbon nanotubes 126 connected end to end are single-walled carbon nanotubes with a diameter of 0.5 nanometers to 50 nanometers, double-walled carbon nanotubes with a diameter of 1 nanometer to 50 nanometers, and multi-walled carbon nanotubes with a diameter of 1.5 nanometers to 50 nanometers. tube or any combination thereof. The lengths of the end-to-end carbon nanotubes 126 are all in the range of 10 microns to 5000 microns. The protruding carbon nanotube 126 of the second end 124 of the carbon nanotube tip 12 is used as the electron emission end 128 of the field emission electron source. The length and diameter of the carbon nanotubes 126 at the end 128 are smaller than the other carbon nanotubes 126 in the carbon nanotube tip 12 .
该导电基体14由导电材料制成,如铜、钨、金、钼、铂等。该导电基体14可依实际需要设计成其他形状,如锥形、细小的柱形或者圆台形。该导电基体14也可为表面形成有一导电薄膜的绝缘基底。 The conductive base 14 is made of conductive material, such as copper, tungsten, gold, molybdenum, platinum and so on. The conductive base 14 can be designed into other shapes according to actual needs, such as a cone, a small column or a truncated cone. The conductive base 14 can also be an insulating base with a conductive thin film formed on its surface.
该碳纳米管针尖12的第一端122通过分子间力与导电基体14电连接。可以理解,碳纳米管针尖12与导电基体14之间也可通过导电胶连接。该碳纳米管针尖12与导电基体14之间的位置关系不限,只需确保该碳纳米管针尖12的第一端122与该导电基体14电连接即可,如:碳纳米管针尖12与导电基体14的夹角为锐角,碳纳米管针尖12与导电基体14的夹角为直角或者碳纳米管针尖12与导电基体14的轴向相互平行。 The first end 122 of the carbon nanotube tip 12 is electrically connected to the conductive matrix 14 through intermolecular force. It can be understood that the carbon nanotube tip 12 and the conductive base 14 can also be connected by conductive glue. The positional relationship between the carbon nanotube tip 12 and the conductive substrate 14 is not limited, it is only necessary to ensure that the first end 122 of the carbon nanotube tip 12 is electrically connected to the conductive substrate 14, such as: the carbon nanotube tip 12 and the conductive substrate 14. The included angle of the conductive base 14 is an acute angle, the included angle between the carbon nanotube tip 12 and the conductive base 14 is a right angle or the axes of the carbon nanotube tip 12 and the conductive base 14 are parallel to each other.
所述场发射电子源具有以下优点:其一,采用的碳纳米管针尖为由多个碳纳米管通过范德华力连接组成的一碳纳米管束状结构,其尖端只有一根碳纳米管,尖端处的碳纳米管被其他周围的碳纳米管通过范德华力牢牢固定,因此尖端的碳纳米管可以承受较大的电场力;其二,由于作为场发射尖端的碳纳米管通过碳纳米管束状结构与导电基体相连,因此场发射电流加热产生的热量也可以及时有效的通过其周围的碳纳米管传导出去,故该场发射电子源可以承载较大的场发射电流;其三,该碳纳米管针尖中仅由一根突出的碳纳米管作为场发射尖端,该碳纳米管的直径小于5纳米,因此该场发射电子源形成的电子束宽度较小,分辨率较高。 The field emission electron source has the following advantages: First, the carbon nanotube tip used is a carbon nanotube bundle structure composed of a plurality of carbon nanotubes connected by van der Waals force, and the tip has only one carbon nanotube, and the tip is The carbon nanotubes are firmly fixed by other surrounding carbon nanotubes through van der Waals force, so the carbon nanotubes at the tip can withstand a large electric field force; It is connected to the conductive substrate, so the heat generated by field emission current heating can also be conducted through the surrounding carbon nanotubes in a timely and effective manner, so the field emission electron source can carry a large field emission current; third, the carbon nanotubes Only one protruding carbon nanotube is used as the field emission tip in the needle tip, and the diameter of the carbon nanotube is less than 5 nanometers, so the width of the electron beam formed by the field emission electron source is small and the resolution is high.
请参阅图5、图6、图7及图8,本技术方案实施例提供一种制备上述场发射电子源的方法,具体包括以下步骤: Please refer to Fig. 5, Fig. 6, Fig. 7 and Fig. 8. The embodiment of the technical solution provides a method for preparing the above-mentioned field emission electron source, which specifically includes the following steps:
步骤一:提供一碳纳米管薄膜,该碳纳米管薄膜中的碳纳米管沿同一方向延伸排列。 Step 1: providing a carbon nanotube film, the carbon nanotubes in the carbon nanotube film are extended and arranged along the same direction.
该碳纳米管薄膜的制备方法包括以下步骤: The preparation method of the carbon nanotube film comprises the following steps:
首先,提供一碳纳米管阵列形成于一基底,优选地,该阵列为超顺排碳纳米管阵列。 Firstly, a carbon nanotube array formed on a substrate is provided. Preferably, the array is a superparallel carbon nanotube array.
本实施例中,碳纳米管阵列的制备方法采用化学气相沉积法,其具体步骤包括:(a)提供一平整基底,该基底可选用P型或N型硅基底,或选用形成有氧化层的硅基底,本实施例优选为采用4英寸的硅基底;(b)在基底表面均匀形成一催化剂层,该催化剂层材料可选用铁(Fe)、钴(Co)、镍(Ni)或其任意组合的合金之一;(c)将上述形成有催化剂层的基底在700℃~900℃的空气中退火约30分钟~90分钟;(d)将处理过的基底置于反应炉中,在保护气体环境下加热到500℃~740℃,然后通入碳源气体反应约5分钟~30分钟,生长得到碳纳米管阵列,其高度大于100微米。该碳纳米管阵列为多个彼此平行且垂直于基底生长的碳纳米管形成的纯碳纳米管阵列。该碳纳米管阵列与上述基底面积基本相同。通过上述控制生长条件,该超顺排碳纳米管阵列中基本不含有杂质,如无定型碳或残留的催化剂金属颗粒等。 In this embodiment, the preparation method of the carbon nanotube array adopts the chemical vapor deposition method, and its specific steps include: (a) providing a flat substrate, which can be a P-type or N-type silicon substrate, or a silicon substrate with an oxide layer formed on it. Silicon substrate, this embodiment preferably adopts a 4-inch silicon substrate; (b) uniformly form a catalyst layer on the surface of the substrate, and the catalyst layer material can be selected from iron (Fe), cobalt (Co), nickel (Ni) or any One of the combined alloys; (c) annealing the above-mentioned substrate with the catalyst layer in the air at 700°C to 900°C for about 30 minutes to 90 minutes; (d) placing the treated substrate in a reaction furnace, under protection Heating to 500°C to 740°C in a gas environment, and then introducing a carbon source gas to react for about 5 minutes to 30 minutes to grow a carbon nanotube array with a height greater than 100 microns. The carbon nanotube array is a pure carbon nanotube array formed by a plurality of carbon nanotubes growing parallel to each other and perpendicular to the substrate. The carbon nanotube array has substantially the same area as the aforementioned substrate. By controlling the growth conditions above, the super-aligned carbon nanotube array basically does not contain impurities, such as amorphous carbon or residual catalyst metal particles.
本实施例中碳源气可选用乙炔、乙烯、甲烷等化学性质较活泼的碳氢化合物,本实施例优选的碳源气为乙炔;保护气体为氮气或惰性气体,本实施例优选的保护气体为氩气。 In this embodiment, the carbon source gas can be selected from acetylene, ethylene, methane and other chemically active hydrocarbons. The preferred carbon source gas in this embodiment is acetylene; the protective gas is nitrogen or an inert gas, and the preferred protective gas in this embodiment for argon gas.
可以理解,本实施例提供的碳纳米管阵列不限于上述制备方法。本实施例提供的碳纳米管阵列为单壁碳纳米管阵列、双壁碳纳米管阵列及多壁碳纳米管阵列中的一种。 It can be understood that the carbon nanotube array provided in this embodiment is not limited to the above preparation method. The carbon nanotube array provided in this embodiment is one of a single-wall carbon nanotube array, a double-wall carbon nanotube array, and a multi-wall carbon nanotube array.
其次,采用一拉伸工具从碳纳米管阵列中拉取碳纳米管获得一碳纳米管薄膜。 Secondly, a stretching tool is used to pull carbon nanotubes from the carbon nanotube array to obtain a carbon nanotube film.
该碳纳米管薄膜制备具体包括以下步骤:(a)从上述碳纳米管阵列中选定一定宽度的多个碳纳米管片断,本实施例优选为采用具有一定宽度的胶带接触碳纳米管阵列以选定一定宽度的多个碳纳米管片断;(b)以一定速度沿基本垂直于碳纳米管阵列生长方向拉伸多个该碳纳米管片断,以形成一连续的碳纳米管薄膜。 The preparation of the carbon nanotube film specifically includes the following steps: (a) selecting a plurality of carbon nanotube segments with a certain width from the above-mentioned carbon nanotube array. In this embodiment, an adhesive tape with a certain width is preferably used to contact the carbon nanotube array to Selecting a plurality of carbon nanotube segments with a certain width; (b) Stretching the plurality of carbon nanotube segments at a certain speed along a direction substantially perpendicular to the growth direction of the carbon nanotube array to form a continuous carbon nanotube film.
在上述拉伸过程中,该多个碳纳米管片断在拉力作用下沿拉伸方向逐渐脱离基底的同时,由于范德华力作用,该选定的多个碳纳米管片断分别与其他碳纳米管片断首尾相连地连续地被拉出,从而形成一碳纳米管薄膜。该碳纳米管薄膜包括多个首尾相连且定向延伸的碳纳米管片断。该碳纳米管薄膜中碳纳米管的延伸方向基本平行于碳纳米管薄膜的拉伸方向。 During the above-mentioned stretching process, while the multiple carbon nanotube segments are gradually detached from the substrate along the stretching direction under the action of tension, due to the van der Waals force, the selected multiple carbon nanotube segments are separated from other carbon nanotube segments respectively. The carbon nanotubes are pulled out continuously end to end to form a carbon nanotube film. The carbon nanotube film includes a plurality of end-to-end connected carbon nanotube segments extending in an orientation. The extending direction of the carbon nanotubes in the carbon nanotube film is substantially parallel to the stretching direction of the carbon nanotube film.
步骤二,提供一第一电极22和一第二电极24,将上述碳纳米管薄膜的两端分别固定于第一电极22和第二电极24上,该碳纳米管薄膜中碳纳米管从第一电极22向第二电极24延伸。 Step 2, provide a first electrode 22 and a second electrode 24, and fix the two ends of the above-mentioned carbon nanotube film on the first electrode 22 and the second electrode 24 respectively, in this carbon nanotube film, carbon nanotubes from the second electrode The first electrode 22 extends toward the second electrode 24 .
第一电极22与第二电极24之间保持一定的距离,且相互绝缘。将碳纳米管薄膜的沿其拉伸方向的一端平铺粘附于第一电极22上且与第一电极22电性连接,碳纳米管薄膜的沿其拉伸方向的另一端平铺粘附于第二电极24上且与第二电极24电性连接,使碳纳米管薄膜中间悬空并处于拉伸状态。由于碳纳米管薄膜本身具有一定的粘性,因此可将碳纳米管薄膜的两端分别直接粘附于第一电极22和第二电极24上,也可以通过导电胶如银胶将碳纳米管薄膜的两端分别粘附于第一电极22和第二电极24上。 A certain distance is maintained between the first electrode 22 and the second electrode 24 , and they are insulated from each other. One end of the carbon nanotube film along its stretching direction is tiled and adhered to the first electrode 22 and electrically connected to the first electrode 22, and the other end of the carbon nanotube film along its stretching direction is tiled and adhered On the second electrode 24 and electrically connected to the second electrode 24, the middle of the carbon nanotube film is suspended and stretched. Since the carbon nanotube film itself has a certain viscosity, the two ends of the carbon nanotube film can be directly adhered to the first electrode 22 and the second electrode 24 respectively, or the carbon nanotube film can be bonded by conductive glue such as silver glue. The two ends of the electrode are adhered to the first electrode 22 and the second electrode 24 respectively.
该第一电极22和第二电极24由导电材料制成,如铜、钨、金、钼、铂、ITO玻璃等。该第一电极22和第二电极24的形状不限,只需确保第一电极22和第二电极24具有一平面可以使碳纳米管薄膜的两端分别平铺粘附即可。本实施例中第一电极22与第二电极24的形状为一长方体。所述第一电极22和第二电极24之间的距离为50微米-2毫米,本实施例优选为320微米。 The first electrode 22 and the second electrode 24 are made of conductive materials, such as copper, tungsten, gold, molybdenum, platinum, ITO glass and the like. The shapes of the first electrode 22 and the second electrode 24 are not limited, it is only necessary to ensure that the first electrode 22 and the second electrode 24 have a flat surface so that the two ends of the carbon nanotube film can be tiled and adhered respectively. In this embodiment, the shape of the first electrode 22 and the second electrode 24 is a cuboid. The distance between the first electrode 22 and the second electrode 24 is 50 microns-2 mm, preferably 320 microns in this embodiment.
步骤三,通过使用有机溶剂处理该碳纳米管薄膜,形成多个碳纳米管线28。 In step three, a plurality of carbon nanotube wires 28 are formed by treating the carbon nanotube film with an organic solvent.
通过试管将有机溶剂滴落在碳纳米管薄膜表面从而浸润整个碳纳米管薄膜。也可以将上述碳纳米管薄膜连同第一电极22和第二电极24一起浸入盛有有机溶剂的容器中浸润。该有机溶剂为挥发性有机溶剂,如乙醇、甲醇、丙酮、二氯乙烷或氯仿,本实施例中优选采用乙醇。该有机溶剂挥发后,在挥发性有机溶剂的表面张力的作用下,碳纳米管薄膜中的首尾相连的碳纳米管片断会部分聚集成多个碳纳米管线28。所述碳纳米管线28包括多个沿碳纳米管线28轴向定向延伸且首尾相连的碳纳米管126,碳纳米管线28的两端分别与第一电极22和第二电极28垂直连接。碳纳米管线28的直径为1微米-20微米,长度为0.05毫米-2毫米。 The organic solvent is dropped on the surface of the carbon nanotube film through a test tube to infiltrate the entire carbon nanotube film. It is also possible to immerse the above-mentioned carbon nanotube film together with the first electrode 22 and the second electrode 24 into a container containing an organic solvent. The organic solvent is a volatile organic solvent, such as ethanol, methanol, acetone, dichloroethane or chloroform, and ethanol is preferably used in this embodiment. After the organic solvent volatilizes, under the effect of the surface tension of the volatile organic solvent, the end-to-end connected carbon nanotube segments in the carbon nanotube film will partially gather into a plurality of carbon nanotube wires 28 . The carbon nanotube wire 28 includes a plurality of carbon nanotubes 126 extending axially along the carbon nanotube wire 28 and connected end to end. Both ends of the carbon nanotube wire 28 are vertically connected to the first electrode 22 and the second electrode 28 respectively. The carbon nanotube wire 28 has a diameter of 1 μm-20 μm and a length of 0.05 mm-2 mm.
步骤四:将该碳纳米管线28通电流加热熔断,得到多个碳纳米管针尖12。 Step 4: heating and fusing the carbon nanotube wire 28 with electric current to obtain a plurality of carbon nanotube needle points 12 .
该步骤可以在真空环境下或惰性气体保护的环境下进行,其具体包括以下步骤: This step can be carried out under a vacuum environment or an environment protected by an inert gas, and it specifically includes the following steps:
首先,请参见图7、图8及图9,将第一电极22、第二电极24和与两电极相连接的碳纳米管线28置于一反应室20内,该反应室20包括一可视窗口(图中未标出),该反应室20内部压强为低于1×10-1帕的真空状态,本实施例反应室20的内部的真空度优选为优选为2×10-5帕。 First, referring to Fig. 7, Fig. 8 and Fig. 9, the first electrode 22, the second electrode 24 and the carbon nanotube wire 28 connected with the two electrodes are placed in a reaction chamber 20, and the reaction chamber 20 includes a visible Window (not shown in the figure), the internal pressure of the reaction chamber 20 is in a vacuum state lower than 1×10 -1 Pa, and the vacuum degree inside the reaction chamber 20 in this embodiment is preferably preferably 2×10 -5 Pa.
该反应室20内部可充满惰性气体取代真空环境,如氦气或氩气等,以免碳纳米管线28在熔断过程中因为氧化而引起结构破坏。 The interior of the reaction chamber 20 can be filled with an inert gas instead of the vacuum environment, such as helium or argon, so as to prevent the structure damage of the carbon nanotubes 28 due to oxidation during the fusing process.
其次,在第一电极22和第二电极24之间施加一电压,通入电流加热熔断碳纳米管线28。 Secondly, a voltage is applied between the first electrode 22 and the second electrode 24 , and a current is passed through to heat and fuse the carbon nanotube wire 28 .
本技术领域人员应当明白,第一电极22与第二电极24之间施加的电压与碳纳米管线28的直径和长度有关。本实施例中,碳纳米管线28的直径为2微米,长度为300微米,在第一电极22与第二电极24之间施加一40伏特的直流电压。碳纳米管线28在焦耳热的作用下加热到温度为2000K至2400K,加热时间小于1小时。在真空直流加热过程中,通过碳纳米管线28的电流会逐渐上升,但很快电流就开始下降,直到碳纳米管线28被熔断。请参阅图10,在熔断前,每个碳纳米管线28的中间位置会出现亮点,这是由于焦耳热的作用使碳纳米管线28的温度逐渐升高,同时碳纳米管线28内部产生的热量要通过碳纳米管线28本身分别向第一电极22或第二电极24的方向传导,碳纳米管线28的中间位置离第一电极22或第二电极24的距离最远,使该处的温度最高,因此出现亮点,故碳纳米管线28的中间位置最易断开。当每个碳纳米管线28从该亮点处熔断后,形成了两个正对的碳纳米管针尖12,该碳纳米管针尖12包括一第一端122及与第一端122相对的第二端124,其中,第一端122固定于第一电极22或第二电极124上,第二端124为悬空状态。碳纳米管针尖12包括多个沿碳纳米管针尖12轴向定向延伸且首尾相连的碳纳米管126,碳纳米管126之间通过范德华力相互紧密结合。碳纳米管针尖12的第二端124为一圆锥形,第二端124的直径沿远离第一端122的方向逐渐减小,第二端124的顶端为一根突出的碳纳米管126,该碳纳米管126即为电子发射端128。该碳纳米管针尖12的长度为0.01毫米至1毫米,直径为1微米至20微米。 Those skilled in the art should understand that the voltage applied between the first electrode 22 and the second electrode 24 is related to the diameter and length of the carbon nanotube wire 28 . In this embodiment, the carbon nanotube wire 28 has a diameter of 2 microns and a length of 300 microns, and a DC voltage of 40 volts is applied between the first electrode 22 and the second electrode 24 . The carbon nanotube wire 28 is heated to a temperature of 2000K to 2400K under the action of Joule heat, and the heating time is less than 1 hour. During the vacuum direct current heating process, the current passing through the carbon nanotube wire 28 will gradually increase, but the current will soon decrease until the carbon nanotube wire 28 is fused. Please refer to Fig. 10, before fusing, bright spots will appear in the middle of each carbon nanotube wire 28. The carbon nanotube wire 28 itself conducts to the direction of the first electrode 22 or the second electrode 24 respectively, and the middle position of the carbon nanotube wire 28 is farthest away from the first electrode 22 or the second electrode 24, so that the temperature there is the highest, Therefore, a bright spot appears, so the middle position of the carbon nanotube wire 28 is most likely to be disconnected. After each carbon nanotube wire 28 is fused from the bright spot, two facing carbon nanotube needle points 12 are formed, and the carbon nanotube needle point 12 includes a first end 122 and a second end opposite to the first end 122 124, wherein the first end 122 is fixed on the first electrode 22 or the second electrode 124, and the second end 124 is suspended. The carbon nanotube tip 12 includes a plurality of carbon nanotubes 126 extending along the axial direction of the carbon nanotube tip 12 and connected end to end, and the carbon nanotubes 126 are closely combined with each other by van der Waals force. The second end 124 of the carbon nanotube tip 12 is conical, the diameter of the second end 124 gradually decreases along the direction away from the first end 122, and the top of the second end 124 is a protruding carbon nanotube 126. The carbon nanotubes 126 are the electron emitting ends 128 . The carbon nanotube tip 12 has a length of 0.01 mm to 1 mm and a diameter of 1 micron to 20 microns.
本实施例采用的真空熔断法,避免了机械法切割碳纳米管线28时端口的污染,而且,加热过程中碳纳米管线28的机械强度会有一定提高,使之具备更优良的机械性能。 The vacuum fusing method adopted in this embodiment avoids the contamination of the port when the carbon nanotube 28 is mechanically cut, and the mechanical strength of the carbon nanotube 28 will be improved during the heating process, so that it has better mechanical properties.
请参阅图11,为碳纳米管针尖12的第二端124的拉曼光谱图。由图可见,经过热处理后,碳纳米管针尖12的第二端124的缺陷峰相对于未经热处理的碳纳米管线28的缺陷峰有明显的降低。也就是说,碳纳米管针尖12在熔断的过程中,其第二端124处的碳纳米管126品质得到了极大的提高。这一方面是由于碳纳米管经过热处理后缺陷减少,另一方面是因为富含缺陷的石墨层容易在高温下崩溃,剩下一些品质较高的石墨层,这一结果导致作为电子发射端128的碳纳米管126的直径小于碳纳米管针尖12中的其他碳纳米管126。 Please refer to FIG. 11 , which is a Raman spectrum diagram of the second end 124 of the carbon nanotube tip 12 . It can be seen from the figure that after heat treatment, the defect peak of the second end 124 of the carbon nanotube tip 12 is significantly lower than that of the carbon nanotube wire 28 without heat treatment. That is to say, the quality of the carbon nanotubes 126 at the second end 124 of the carbon nanotube tip 12 is greatly improved during the fusing process. On the one hand, this is due to the fact that the defects of carbon nanotubes are reduced after heat treatment, and on the other hand, because the graphite layer rich in defects is easy to collapse at high temperature, leaving some high-quality graphite layers, this result leads to the electron emission end 128 The carbon nanotubes 126 have a smaller diameter than other carbon nanotubes 126 in the carbon nanotube tip 12 .
步骤五:将碳纳米管针尖12转移设置于导电基体14上即得到场发射电子源10。 Step 5: transfer and arrange the carbon nanotube tip 12 on the conductive substrate 14 to obtain the field emission electron source 10 .
请参阅图12,将碳纳米管针尖12转移设置于导电基体14上的方法具体包括以下步骤: Please refer to FIG. 12 , the method for transferring the carbon nanotube tip 12 to the conductive substrate 14 specifically includes the following steps:
首先,固定导电基体14于一三维移动机构上。 First, fix the conductive base 14 on a three-dimensional moving mechanism.
该三维移动机构可通过电脑精确控制其移动方向和移动距离,使导电基体14在三维空间中精确移动。 The three-dimensional moving mechanism can precisely control its moving direction and moving distance through a computer, so that the conductive base 14 can move precisely in three-dimensional space.
其次,移动导电基体14,使导电基体14与一个碳纳米管针尖12接触,将碳纳米管针尖12压弯,以在碳纳米管针尖12的弯折处形成一定的应力。 Secondly, the conductive base 14 is moved so that the conductive base 14 is in contact with a carbon nanotube tip 12 , and the carbon nanotube tip 12 is bent to form a certain stress at the bend of the carbon nanotube tip 12 .
上述步骤在光学显微镜辅助的情况下进行,以便清楚的观察碳纳米管针尖12和导电基体14之间的距离,以及碳纳米管针尖12的状态。 The above steps are carried out with the aid of an optical microscope in order to clearly observe the distance between the carbon nanotube tip 12 and the conductive substrate 14 and the state of the carbon nanotube tip 12 .
最后,施加一电流于导电基体14和碳纳米管针尖12之间,将碳纳米管针尖12熔断,熔断的碳纳米管针尖12固定于导电基体14上形成场发射电子源。 Finally, a current is applied between the conductive substrate 14 and the carbon nanotube tip 12 to fuse the carbon nanotube tip 12 , and the fused carbon nanotube tip 12 is fixed on the conductive substrate 14 to form a field emission electron source.
所述电流可以为直流电流也可以为交流电流,其大小为5-30毫安,可以理解,电流的大小与碳纳米管针尖12的直径有关,本实施例中,碳纳米管针尖12的直径为3微米,电流为10毫安。 Described electric current can be direct current also can be alternating current, and its magnitude is 5-30 milliamps, and it can be understood that the magnitude of electric current is related to the diameter of carbon nanotube needle point 12, and in the present embodiment, the diameter of carbon nanotube needle point 12 is 3 µm and the current is 10 mA.
经过上述步骤后,碳纳米管针尖12与导电基体14之间通过分子间力结合,形成一场发射电子源10。 After the above steps, the carbon nanotube tip 12 and the conductive matrix 14 are bonded by intermolecular force to form a field emission electron source 10 .
由于碳纳米管针尖12的尺寸较小,如采用机械方法将碳纳米管针尖12从电极上取下,然后再将碳纳米管针尖12粘附于导电基体14上,很容易将碳纳米管针尖12损坏,且难以操作。本技术方案所采用的真空电流熔断的方法不会对碳纳米管针尖12造成损坏,且可以一步完成将碳纳米管针尖12从电极上取下并粘附于导电基体14上过程,操作简单。 Due to the smaller size of the carbon nanotube tip 12, if the carbon nanotube tip 12 is removed from the electrode by mechanical means, and then the carbon nanotube tip 12 is adhered to the conductive substrate 14, it is easy to remove the carbon nanotube tip 12. 12 damaged and difficult to handle. The vacuum current fusing method adopted in this technical solution will not damage the carbon nanotube tip 12, and the process of removing the carbon nanotube tip 12 from the electrode and adhering to the conductive substrate 14 can be completed in one step, and the operation is simple.
请参阅图13及图14,上述场发射电子源10的制备方法在步骤六之后还可进一步通过导电胶固定碳纳米管针尖12和导电基体14,其具体包括以下步骤: Please refer to FIG. 13 and FIG. 14 , the preparation method of the above-mentioned field emission electron source 10 can further fix the carbon nanotube tip 12 and the conductive substrate 14 through the conductive glue after the sixth step, which specifically includes the following steps:
首先,提供一支撑体16,涂敷一定厚度的导电胶18于该支撑体16的一端。 First, a support body 16 is provided, and a certain thickness of conductive glue 18 is coated on one end of the support body 16 .
所述支撑体16用于支撑导电胶18,其为一线状结构,直径为50-200微米,该支撑体16的材料为一硬质材料,优选地,支撑体16为一直径为125微米的光纤。 The support body 16 is used to support the conductive glue 18, which is a linear structure with a diameter of 50-200 microns. The material of the support body 16 is a hard material. Preferably, the support body 16 is a 125 micron diameter. optical fiber.
所述导电胶18涂敷于支撑体16的一端,其厚度为5-50微米,优选地,该导电胶18厚度为20微米的银胶。 The conductive glue 18 is coated on one end of the support body 16 with a thickness of 5-50 microns. Preferably, the conductive glue 18 is silver glue with a thickness of 20 microns.
其次,固定支撑体16的未涂敷导电胶18的另一端于一三维移动机构(图未示)上。 Secondly, the other end of the support body 16 that is not coated with the conductive glue 18 is fixed on a three-dimensional moving mechanism (not shown).
该三维移动机构可通过电脑精确控制其移动方向和移动距离,使支撑体16在三维空间中精确移动。 The three-dimensional moving mechanism can precisely control its moving direction and moving distance through a computer, so that the supporting body 16 can move precisely in three-dimensional space.
再次,使场发射电子源10与支撑体16涂敷有导电胶的一端相接触,粘附部分导电胶18于碳纳米管针尖12与导电基体14相接触的部位。 Again, the field emission electron source 10 is brought into contact with the end of the support body 16 coated with the conductive glue, and part of the conductive glue 18 is adhered to the position where the carbon nanotube tip 12 is in contact with the conductive matrix 14 .
上述步骤在光学显微镜下进行。由于导电胶18处于浆料状态,碳纳米管针尖12和部分导电基体14陷入导电胶18中,而后,缓慢移动支撑体16或场发射电子源10,使支撑体16与场发射电子源10分离,此时,由于导电胶18处于浆料状态,在分离支撑体16与场发射电子源10时,导电胶18呈现拉丝状,直至该丝状导电胶18被拉断,部分导电胶18粘附于场发射电子源10中的碳纳米管针尖12与导电基体14的接触处。在上述分离导电胶18与场发射电子源10的过程中,由于碳纳米管针尖12与导电基体14之间存在一定的分子间力,碳纳米管针尖12不会从导电基体14上脱落。 The above steps were carried out under an optical microscope. Since the conductive glue 18 is in the slurry state, the carbon nanotube tip 12 and part of the conductive matrix 14 are immersed in the conductive glue 18, and then, the support body 16 or the field emission electron source 10 is slowly moved to separate the support body 16 from the field emission electron source 10 , at this time, since the conductive adhesive 18 is in a slurry state, when the support body 16 and the field emission electron source 10 are separated, the conductive adhesive 18 presents a drawing shape, until the filamentous conductive adhesive 18 is pulled off, and part of the conductive adhesive 18 adheres In the field emission electron source 10 , the carbon nanotube tip 12 is in contact with the conductive base 14 . In the process of separating the conductive glue 18 and the field emission electron source 10 , due to the certain intermolecular force between the carbon nanotube tip 12 and the conductive matrix 14 , the carbon nanotube tip 12 will not fall off from the conductive matrix 14 .
最后,烘干上述粘附有导电胶18的场发射电子源10,而后在一定温度下烧结场发射电子源10一段时间。 Finally, the field emission electron source 10 adhered with the conductive glue 18 is dried, and then the field emission electron source 10 is sintered at a certain temperature for a period of time.
本实施例中,将粘附有银胶的场发射电子源10置于一加热炉中,在氮气、惰性气体或真空状态下,80-120℃的温度下烘干30分钟-2小时,然后将温度升至350-500℃,烧结20分钟-1小时后,冷却至室温。 In this embodiment, the field emission electron source 10 adhered with silver colloid is placed in a heating furnace, and dried at a temperature of 80-120° C. for 30 minutes to 2 hours under nitrogen, inert gas or vacuum state, and then Raise the temperature to 350-500°C, sinter for 20 minutes to 1 hour, and then cool to room temperature.
在上述烧结过程中,银胶中的有机成分在高温下被除去,银胶凝固,使碳纳米管针尖12固定在导电基体14上,使碳纳米管针尖12与导电基体14牢固的结合,使场发射电子源10可以承受较大电场力。请参见图15,本实施例所制备的场发射电子源10可以发射20微安以上的电流。 In the above-mentioned sintering process, the organic components in the silver colloid are removed at high temperature, and the silver colloid is solidified, so that the carbon nanotube tip 12 is fixed on the conductive substrate 14, and the carbon nanotube tip 12 is firmly combined with the conductive substrate 14, so that The field emission electron source 10 can withstand relatively large electric field force. Please refer to FIG. 15 , the field emission electron source 10 prepared in this embodiment can emit a current above 20 microamperes.
另外,本领域技术人员还可在本发明精神内做其他变化,当然,这些依据本发明精神所做的变化,都应包含在本发明所要求保护的范围之内。 In addition, those skilled in the art can also make other changes within the spirit of the present invention. Of course, these changes made according to the spirit of the present invention should be included within the scope of protection claimed by the present invention.
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