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CN102411087A - Four-input microelectromechanical microwave power sensor with 90° angle and preparation method thereof - Google Patents

Four-input microelectromechanical microwave power sensor with 90° angle and preparation method thereof Download PDF

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CN102411087A
CN102411087A CN2011102294491A CN201110229449A CN102411087A CN 102411087 A CN102411087 A CN 102411087A CN 2011102294491 A CN2011102294491 A CN 2011102294491A CN 201110229449 A CN201110229449 A CN 201110229449A CN 102411087 A CN102411087 A CN 102411087A
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photoresist
substrate
gold
cpw
thermopile
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CN102411087B (en
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廖小平
张志强
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Southeast University
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Southeast University
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Abstract

The invention discloses a 90-degree four-input micro-electromechanical microwave power sensor, which is provided with four CPW input ends for transmitting microwave signals, wherein the CPW input ends are symmetrically arranged and form a 90-degree angle with each other, the output end of each CPW is connected with two terminal matching resistors, a thermocouple is arranged near each terminal matching resistor, the four pairs of thermocouples are also symmetrically arranged and connected in series to form a thermopile, and the four pairs of thermocouples also form a 90-degree angle with each other, so that the measurement of the four-input microwave power is realized, the area of a chip is greatly reduced, and the integration level is improved; in addition, the four-input micro-electromechanical microwave power sensor also has the advantages of low loss, high sensitivity, good linearity and the like of the traditional thermoelectric microwave power sensor.

Description

Be 90 ° of angles, four input microelectron-mechanical microwave power detector and preparation methods
Technical field
The present invention proposes and be 90o angle four input microelectron-mechanical microwave power detector and preparation methods, belong to the technical field of microelectromechanical systems (MEMS).
Background technology
In research of microwave technology, microwave power is an important parameter that characterizes the microwave signal characteristic, and the measurement of microwave power has important status in wireless application and measuring technique.At present; Microwave power detector based on diode is one of the device of measuring power that is widely used; Non-linear and the rectification characteristic that it utilizes diode current-voltage curve converts microwave signal into low frequency signal, and the microwave power of this low frequency signal and input is proportional in the square law district.It has advantages such as dynamic range and speed is fast, yet measuring accuracy is low and need extra shortcomings such as attenuator when measuring high power.Along with the fast development of MEMS technology, and, make based on the MEMS technology and realize that the 90o angle four input microwave power detectors that are of microwave power measurement become possibility the technological further investigation of MEMS.The present invention is based on the microwave power detector of this principle of work.
Summary of the invention
Technical matters:The present invention provides a kind of 90o angle four that is based on the MEMS technology to import microwave power detector and preparation methods; Place four co-planar waveguides (CPW) through symmetry; They are the angle of 90o each other; Output terminal at each co-planar waveguide connects two terminal build-out resistors, and a thermopair is arranged near each terminal build-out resistor, also becomes symmetry to place parallel-series these four pairs of thermopairs and is connected to form thermoelectric pile; These four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; It has reduced chip area greatly, has improved integrated level.
Technical scheme:The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors are substrate with gallium arsenide (GaAs); On substrate, be provided with four CPW, eight terminal build-out resistors, one and constitute thermoelectric pile that four pairs of thermoelectricity form occasionally, two output press welding blocks, metal fin and connecting line by eight thermopairs, MEMS substrate film structure of formation under substrate:
CPW is used to realize the transmission of microwave signal, adopts gold copper-base alloy.Each CPW is made up of the signal wire of a CPW and the ground wire of two CPW.
The terminal build-out resistor adopts tantalum-nitride material to process, and absorbs the microwave power by the transmission of CPW input end fully, and converts heat into.
Thermoelectric pile constitutes four pairs of thermoelectricity by eight thermopairs to be formed occasionally, and said thermopair comprises semiconductor thermocouple arm and metal thermocouple arm, adopts gold and lightly doped GaAs material to constitute.Each thermopair is near a terminal build-out resistor, but is not connected with this terminal build-out resistor; Thermoelectric pile absorbs this heat near an end of terminal resistance; And cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature; Be the cold junction of thermoelectric pile; Because the difference of the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block of thermoelectric pile.
Realize being connected through connecting line between the thermopair and between thermoelectric pile and the output press welding block.
Metal fin adopts gold copper-base alloy to process, by the cold junction of thermoelectric pile around, the cold junction temperature that is used for the maintaining heat pile is an environment temperature, thereby improves the temperature difference at the cold two ends of thermoelectric pile heat.
In order to improve heat by the efficient of terminal resistance to the transmission of the hot junction of thermoelectric pile; And then the temperature difference at raising thermoelectric pile two ends; To improve the sensitivity of microwave power detector; Can form the substrate film structure with the gallium arsenide substrate below the hot junction of terminal resistance and thermoelectric pile through MEMS back-etching technology etching attenuate.
On physical construction, CPW, terminal build-out resistor, thermoelectric pile, output press welding block, metal fin and connecting line are produced on the same GaAs substrate.
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention are placed four CPW through symmetry; They are the angle of 90o each other; Output terminal at each CPW connects two terminal build-out resistors, and a thermopair is arranged near each terminal build-out resistor, also becomes symmetry to place parallel-series these four pairs of thermopairs and is connected to form thermoelectric pile; These four pairs of thermopairs are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are introduced through one, two, three or four CPW input ends respectively; Terminal build-out resistor in its CPW output terminal parallel connection absorbs these microwave powers respectively and produces heat; Terminal resistance temperature is on every side raise; Be placed near the thermopair of this terminal resistance and measure its temperature difference respectively; Based on the Seebeck effect, on the output press welding block of thermoelectric pile, produce the output of thermoelectrical potential, thereby realize the measurement of single input, dual input, three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate: the semi-insulating GaAs substrate of selecting extension for use is as substrate, wherein extension N +The doping content of gallium arsenide is for being 10 18Cm -3, its square resistance be 100～130 Ω/
2) at the N of extension +Gallium arsenide substrate applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm of thermoelectric pile, removes the N of the local extension of photoresist then +Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm that begins to take shape, being completed into its doping content is 10 17Cm -3The semiconductor thermocouple arm of thermoelectric pile;
4) on the substrate that step 3) obtains, apply photoresist, remove the photoresist that the metal thermocouple arm place of thermoelectric pile is made in preparation;
5) sputter gold germanium nickel/gold on substrate, its thickness are 2700 altogether;
6) peel off the photoresist that stays in the removal step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm of formation thermoelectric pile removed;
7) on the substrate that step 6) obtains, apply photoresist, remove the photoresist at preparation manufacture terminal build-out resistor place;
8) sputter tantalum nitride on substrate, its thickness is 1 μM;
9) photoresist lift off that stays in the step 7) is removed, the tantalum nitride above the related removal photoresist begins to take shape the terminal build-out resistor that is made up of tantalum nitride;
10) on gallium arsenide substrate, apply photoresist, remove preparation and make the local photoresist of CPW, metal fin, output press welding block and connecting line;
11) golden through evaporation mode growth one deck on substrate, its thickness is 0.3 μM;
12) photoresist that step 10) is stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW, metal fin, output press welding block and connecting line;
13) anti-carve tantalum nitride, form the terminal build-out resistor be connected with the CPW output terminal, its square resistance be 25 Ω/
14) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) apply photoresist, remove preparation and make CPW, metal fin, output press welding block and the local photoresist of connecting line;
16) electroplate one deck gold, its thickness is 2 μM;
17) remove the photoresist that stays in the step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW, metal fin, output press welding block and connecting line;
19) with this gallium arsenide substrate thinning back side to 100 μM;
20) apply photoresist at the back side of gallium arsenide substrate, remove preparation and form the local photoresist of membrane structure at the gallium arsenide back side;
21) gallium arsenide substrate of below, the hot junction of etching attenuate terminal build-out resistor and thermoelectric pile forms membrane structure, etching 80 μThe substrate thickness of m keeps 20 μThe membrane structure of m.
Beneficial effect:The 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors not only have traditional thermoelectricity such as the linearity that low-loss, high sensitivity become reconciled advantage of wave power sensor that declines, and have the measurement that realizes four input microwave powers, high integrated level and the advantage compatible with GaAs single-chip microwave integration circuit.
Description of drawings
Fig. 1 is the synoptic diagram that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 2 is the A-A sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Fig. 3 is the B-B sectional view that is 90o angle four input microelectron-mechanical microwave power detectors;
Comprise among the figure: four microwave signal input ends 1,2,3 and 4, CPW 5, terminal build-out resistor 6, the thermoelectric pile that is made up of eight thermopairs 7; Semiconductor thermocouple arm 8, metal thermocouple arm 9, metal fin 10, output press welding block 11; The membrane structure 12 of MEMS substrate, connecting line 13, gallium arsenide substrate 14.
Embodiment
The specific embodiments that is 90o angle four input microelectron-mechanical microwave power detectors of the present invention is following:
On gallium arsenide substrate 14, be provided with four CPW 5, eight terminal build-out resistors 6, thermoelectric pile that constitutes four pairs of thermopairs 7 by eight thermopairs 7 and form, two output press welding blocks 11, a metal fin 10 and a connecting line 13, form a MEMS substrate film structure 12 14 times at substrate:
CPW 5 is used to realize the transmission of microwave signal, adopts gold copper-base alloy.Each CPW 5 is made up of the signal wire of a CPW and the ground wire of two CPW.
Terminal build-out resistor 6 adopts tantalum-nitride material to process, and absorbs the microwave power by CPW 5 input ends 1,2,3 and 4 transmission fully, and converts heat into.
Thermoelectric pile constitutes four pairs of thermopairs 7 by eight thermopairs 7 and forms, and said thermopair 7 comprises semiconductor thermocouple arm 8 and metal thermocouple arm 9, adopts gold and lightly doped GaAs material to constitute.Each thermopair 7 is near a terminal build-out resistor 6, but is not connected with this terminal resistance 6; Thermoelectric pile absorbs this heat near an end of terminal resistance 6; And cause the rising of this end temperature, be the hot junction of thermoelectric pile, yet the temperature of the other end of thermoelectric pile is used as environment temperature; Be the cold junction of thermoelectric pile; Because the difference of the cold two ends of thermoelectric pile heat temperature according to the Seebeck effect, produces the output of thermoelectrical potential on the output press welding block 11 of thermoelectric pile.
Realize being connected through connecting line 13 between the thermopair 7 and between thermoelectric pile and the output press welding block 11.
Metal fin 10 adopts gold copper-base alloys to process, by the cold junction of thermoelectric pile around, the cold junction temperature that is used for the maintaining heat pile is an environment temperature, thereby improves the temperature difference at the cold two ends of thermoelectric pile heat.
In order to improve heat by the efficient of terminal resistance 6 to the transmission of the hot junction of thermoelectric pile; And then the temperature difference at raising thermoelectric pile two ends; To improve the sensitivity of microwave power detector; Can form substrate film structure 12 with the gallium arsenide substrate 14 below the hot junction of terminal resistance 6 and thermoelectric pile through MEMS back-etching technology etching attenuate.
On physical construction, CPW 5, terminal build-out resistor 6, thermoelectric pile, output press welding block 11, metal fin 10 and connecting line 13 are produced on the same GaAs substrate 14.
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention are placed four CPW 5 through symmetry; They are the angle of 90o each other; Output terminal at each CPW 5 connects two terminal build-out resistors 6, and a thermopair 7 is arranged near each terminal build-out resistor 6, also becomes symmetry to place parallel-series these four pairs of thermopairs 7 and is connected to form thermoelectric pile; These four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers.When one, two, three or four microwave signals to be measured are introduced through one, two, three or four CPW input ends 1,2,3 and 4 respectively; Terminal build-out resistor 6 in its CPW 5 output terminals parallel connection absorbs these microwave powers respectively and produces heat; Terminal resistance 6 temperature is on every side raise; Be placed near these terminal resistance 6 thermopairs 7 and measure its temperature difference respectively; Based on the Seebeck effect, on the output press welding block 11 of thermoelectric pile, produce the output of thermoelectrical potential, thereby realize the measurement of single input, dual input, three inputs or four input microwave powers.
The preparation method who is 90o angle four input microelectron-mechanical microwave power detectors is:
1) preparing substrate 14: the semi-insulating GaAs substrate 14 of selecting extension for use is as substrate, wherein extension N +The doping content of gallium arsenide is for being 10 18Cm -3, its square resistance be 100～130 Ω/
2) at the N of extension + Gallium arsenide substrate 14 applies photoresist, keeps preparation and makes ohmic contact regions and the photoresist that begins to take shape the semiconductor thermocouple arm 8 of thermoelectric pile, removes the N of the local extension of photoresist then +Gallium arsenide is isolated, and forms ohmic contact regions and the semiconductor thermocouple arm 8 that begins to take shape thermoelectric pile;
3) anti-carve step 2) in the thermoelectric pile semiconductor thermocouple arm 8 that begins to take shape, being completed into its doping content is 10 17Cm -3The semiconductor thermocouple arm 8 of thermoelectric pile;
4) on the substrate 14 that step 3) obtains, apply photoresist, remove the photoresist that metal thermocouple arm 9 places of thermoelectric pile are made in preparation;
5) sputter gold germanium nickel/gold on substrate 14, its thickness are 2700 altogether;
6) peel off the photoresist that stays in the removal step 4), the related gold germanium nickel/gold on the photoresist, the metal thermocouple arm 9 of formation thermoelectric pile removed;
7) on the substrate 14 that step 6) obtains, apply photoresist, remove the photoresist at preparation manufacture terminal build-out resistor 6 places;
8) sputter tantalum nitride on substrate 14, its thickness is 1 μM;
9) photoresist lift off that stays in the step 7) is removed, the tantalum nitride above the related removal photoresist begins to take shape the terminal build-out resistor 6 that is made up of tantalum nitride;
10) on gallium arsenide substrate 14, apply photoresist, remove the photoresist that CPW 5, metal fin 10, output press welding block 11 and connecting line 13 places are made in preparation;
11) golden through evaporation mode growth one deck on substrate 14, its thickness is 0.3 μM;
12) photoresist that step 10) is stayed is removed, and has relatedly removed the gold above the photoresist, begins to take shape CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
13) anti-carve tantalum nitride, form the terminal build-out resistor 6 be connected with CPW 5 output terminals, its square resistance be 25 Ω/
14) down payment that is used to electroplate through the evaporation mode growth: evaporation titanium/gold/titanium, as down payment, its thickness is 500/1500/300;
15) coating photoresist is removed preparation and is made CPW 5, the photoresist in metal fin 10, output press welding block 11 and connecting line 13 places;
16) electroplate one deck gold, its thickness is 2 μM;
17) remove the photoresist that stays in the step 15);
18) anti-carve titanium/gold/titanium, the corrosion down payment forms CPW 5, metal fin 10, output press welding block 11 and connecting line 13;
19) with these gallium arsenide substrate 14 thinning back sides to 100 μM;
20) apply photoresist at the back side of gallium arsenide substrate 14, remove preparation forms membrane structure 12 places at gallium arsenide 14 back sides photoresist;
21) gallium arsenide substrate 14 of the below, hot junction of etching attenuate terminal build-out resistor 6 and thermoelectric pile forms membrane structure 12, etching 80 μThe substrate thickness of m keeps 20 μ The membrane structure 12 of m.
Distinguish whether to be the standard of this structure following:
The 90o angle four input microelectron-mechanical microwave power detectors that are of the present invention; Place four CPW 5 through symmetry, they are the angle of 90o each other, in two terminal build-out resistors 6 of output terminal connection of each CPW; A thermopair 7 is arranged near each terminal build-out resistor 6; Also become symmetry to place parallel-series these four pairs of thermopairs 7 and be connected to form thermoelectric pile, these four pairs of thermopairs 7 are the angle of 90o each other too, thereby realize the measurement of four input microwave powers; The structure that satisfies above condition promptly is regarded as the 90o of being of the present invention angle four input microelectron-mechanical microwave power detectors.

Claims (4)

1.一种呈90o角四输入微电子机械微波功率传感器，其特征在于：该结构制作在砷化镓衬底（14）上，在砷化镓衬底（14）上有四个CPW（5），它们彼此对称放置且相互之间呈90o的角，在每个CPW（5）输出端连接两个终端匹配电阻（6），每个终端匹配电阻附近有一个热电偶（7），这八个热电偶（7）构成四对热电偶（7）也呈对称放置并串联连接形成热电堆，在这热电堆的两端有两个输出压焊块（11），热电堆的热端靠近终端匹配电阻（6）而热电堆的冷端靠近金属散热片（10）；在砷化镓衬底（14）背面有MEMS衬底膜结构（12），它位于终端匹配电阻（6）和热电堆的热端下方。 1. A four-input microelectromechanical microwave power sensor with a 90° angle, characterized in that: the structure is fabricated on a gallium arsenide substrate (14), and there are four CPWs (5 ), they are placed symmetrically to each other and at an angle of 90o to each other, two terminal matching resistors (6) are connected at the output of each CPW (5), and there is a thermocouple (7) near each terminal matching resistor, these eight A thermocouple (7) constitutes four pairs of thermocouples (7), which are also placed symmetrically and connected in series to form a thermopile. There are two output pads (11) at both ends of the thermopile, and the hot end of the thermopile is close to the terminal. The matching resistor (6) and the cold end of the thermopile are close to the metal heat sink (10); there is a MEMS substrate film structure (12) on the back of the gallium arsenide substrate (14), which is located between the terminal matching resistor (6) and the thermopile below the hot end. 2.根据权利要求1所述的呈90o角四输入微电子机械微波功率传感器，其特征在于：所述用于传输微波信号的输入端口（1、2、3和4）个数为四个，且彼此对称放置及相互之间呈90o的角。 2. The four-input MEMS microwave power sensor with a 90° angle according to claim 1, characterized in that: the number of input ports (1, 2, 3 and 4) for transmitting microwave signals is four, And placed symmetrically with each other and form an angle of 90o with each other. 3.根据权利要求1所述的呈90o角四输入微电子机械微波功率传感器，其特征在于：每个CPW输出连接两个终端匹配电阻（6）的方式为并联连接；在终端电阻（6）附近，由八个热电偶（7）构成的四对热电偶（7）同样呈对称放置，且相互之间呈90o的角；热电偶（7）之间以及热电堆与输出压焊块（11）之间通过连接线（13）实现连接。 3. The four-input microelectromechanical microwave power sensor with a 90o angle according to claim 1, characterized in that: each CPW output is connected to two terminal matching resistors (6) in parallel; the terminal resistors (6) Nearby, four pairs of thermocouples (7) composed of eight thermocouples (7) are also symmetrically placed, and they form an angle of 90o to each other; ) are connected through connecting wires (13). 4.一种如权利要求1所述的呈90o角四输入微电子机械微波功率传感器的制备方法，其特征在于制备方法为： 4. a preparation method of a 90° angle four-input microelectromechanical microwave power sensor as claimed in claim 1, characterized in that the preparation method is: 1）准备衬底（14）：选用外延的半绝缘砷化镓衬底（14）作为基底，其中外延N＋ 砷化镓的掺杂浓度为为1018cm-3，其方块电阻值为100～130Ω/□； 1) Prepare the substrate (14): choose an epitaxial semi-insulating gallium arsenide substrate (14) as the substrate, in which the doping concentration of epitaxial N + gallium arsenide is 10 18 cm -3 , and its sheet resistance value is 100 ~130Ω/ □ ; 2）在外延的N＋ 砷化镓衬底（14）涂覆光刻胶，保留预备制作欧姆接触区和初步形成热电堆的半导体热偶臂（8）的光刻胶，然后去除光刻胶地方的外延的N＋ 砷化镓被隔离，形成欧姆接触区和初步形成热电堆的半导体热偶臂（8）； 2) Coating photoresist on the epitaxial N + gallium arsenide substrate (14), retaining the photoresist for preparing the ohmic contact area and the semiconductor thermocouple arm (8) that initially forms the thermopile, and then removing the photoresist where the epitaxial N + GaAs is isolated, forming ohmic contact regions and initially forming the semiconducting thermocouple arms of the thermopile (8); 3）反刻步骤2）中初步形成的热电堆半导体热偶臂（8），完全形成其掺杂浓度为1017cm-3的热电堆的半导体热偶臂（8）； 3) The thermopile semiconductor thermocouple arm (8) initially formed in step 2) of reverse etching, and the semiconductor thermocouple arm (8) of the thermopile with a doping concentration of 10 17 cm -3 is completely formed; 4）在步骤3）得到的衬底（14）上涂覆光刻胶，去除预备制作热电堆的金属热偶臂（9）处的光刻胶； 4) Coating photoresist on the substrate (14) obtained in step 3), and removing the photoresist at the metal thermocouple arm (9) for preparing the thermopile; 5）在衬底（14）上溅射金锗镍/金，其厚度共为2700?； 5) Sputter gold-germanium-nickel/gold on the substrate (14), with a total thickness of 2700 Å; 6）剥离去除步骤4）中留下的光刻胶，连带去除了光刻胶上的金锗镍/金，形成热电堆的金属热偶臂（9）； 6) Stripping and removing the photoresist left in step 4), and removing the gold, germanium, nickel/gold on the photoresist to form the metal thermocouple arm (9) of the thermopile; 7）在步骤6）得到的衬底（14）上涂覆光刻胶，去除预备制作终端匹配电阻（6）处的光刻胶； 7) Coating photoresist on the substrate (14) obtained in step 6), and removing the photoresist at the place where the terminal matching resistor (6) is prepared; 8）在衬底（14）上溅射氮化钽，其厚度为1μm； 8) sputtering tantalum nitride on the substrate (14) with a thickness of 1 μm ; 9）将步骤7）中留下的光刻胶剥离去除，连带去除光刻胶上面的氮化钽，初步形成由氮化钽构成的终端匹配电阻（6）； 9) Strip and remove the photoresist left in step 7), and remove the tantalum nitride on the photoresist to initially form a terminal matching resistor (6) composed of tantalum nitride; 10）在砷化镓衬底（14）上涂覆光刻胶，去除预备制作CPW（5）、金属散热片（10）、输出压焊块（11）以及连接线（13）地方的光刻胶； 10) Coating photoresist on the gallium arsenide substrate (14), removing the photolithography where the CPW (5), metal heat sink (10), output pad (11) and connection line (13) are prepared glue; 11）在衬底（14）上通过蒸发方式生长一层金，其厚度为0.3μm； 11) growing a layer of gold by evaporation on the substrate (14), the thickness of which is 0.3 μm ; 12）将步骤10）留下的光刻胶去除，连带去除了光刻胶上面的金，初步形成CPW（5）、金属散热片（10）、输出压焊块（11）以及连接线（13）； 12) Remove the photoresist left in step 10), and remove the gold on the photoresist, and initially form CPW (5), metal heat sink (10), output pad (11) and connecting wire (13) ); 13）反刻氮化钽，形成与CPW（5）输出端相连接的终端匹配电阻（6），其方块电阻均为25Ω/□； 13) Anti-engraving tantalum nitride to form a terminal matching resistor (6) connected to the output terminal of CPW (5), the square resistance of which is 25Ω/ □ ; 14）通过蒸发方式生长用于电镀的底金：蒸发钛/金/钛，作为底金，其厚度为500/1500/300?； 14) Growth of bottom gold for electroplating by evaporation: evaporate titanium/gold/titanium as bottom gold with a thickness of 500/1500/300?; 15）涂覆光刻胶，去除预备制作CPW（5），金属散热片（10）、输出压焊块（11）以及连接线（13）地方的光刻胶； 15) Apply photoresist, and remove the photoresist where the CPW (5), metal heat sink (10), output pad (11) and connection line (13) are prepared; 16）电镀一层金，其厚度为2μm； 16) Electroplate a layer of gold with a thickness of 2 μm ; 17）去除步骤15）中留下的光刻胶； 17) Remove the photoresist left in step 15); 18）反刻钛/金/钛，腐蚀底金，形成CPW（5），金属散热片（10）、输出压焊块（11）以及连接线（13）； 18) Anti-engraving titanium/gold/titanium, corroding the bottom gold, forming CPW (5), metal heat sink (10), output pad (11) and connecting wire (13); 19）将该砷化镓衬底（14）背面减薄至100μm； 19) thinning the back side of the gallium arsenide substrate (14) to 100 μm ; 20）在砷化镓衬底（14）的背面涂覆光刻胶，去除预备在砷化镓（14）背面形成膜结构（12）地方的光刻胶； 20) Coating photoresist on the back of the gallium arsenide substrate (14), removing the photoresist at the place where the film structure (12) is to be formed on the back of the gallium arsenide (14); 21）刻蚀减薄终端匹配电阻（6）和热电堆的热端下方的砷化镓衬底（14），形成膜结构（12），刻蚀80μm的衬底厚度，保留20μm的膜结构（12）。 21) Etch and thin the gallium arsenide substrate (14) under the terminal matching resistor (6) and the hot end of the thermopile to form a film structure (12), etch the substrate thickness of 80 μm , and leave 20 μm membrane structure (12).
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