CN102478760B - Optical proximity correction (OPC) method for crossover profile - Google Patents
Optical proximity correction (OPC) method for crossover profile Download PDFInfo
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- CN102478760B CN102478760B CN 201010556915 CN201010556915A CN102478760B CN 102478760 B CN102478760 B CN 102478760B CN 201010556915 CN201010556915 CN 201010556915 CN 201010556915 A CN201010556915 A CN 201010556915A CN 102478760 B CN102478760 B CN 102478760B
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- 230000003287 optical effect Effects 0.000 title claims abstract description 41
- 238000000034 method Methods 0.000 title claims abstract description 27
- 239000006117 anti-reflective coating Substances 0.000 claims abstract description 40
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 30
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 238000000576 coating method Methods 0.000 claims abstract description 8
- 230000000694 effects Effects 0.000 claims description 30
- 239000012528 membrane Substances 0.000 claims description 28
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 claims description 26
- 230000008878 coupling Effects 0.000 claims description 12
- 238000010168 coupling process Methods 0.000 claims description 12
- 238000005859 coupling reaction Methods 0.000 claims description 12
- 238000004364 calculation method Methods 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 abstract description 5
- 238000000206 photolithography Methods 0.000 abstract 3
- 230000007704 transition Effects 0.000 abstract 2
- 230000003321 amplification Effects 0.000 description 7
- 238000003199 nucleic acid amplification method Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000002955 isolation Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The invention discloses an optical proximity correction (OPC) method for crossover profile. The method comprises forming a crossover layer film on a silicon wafer having lower layer film profile, and coating bottom anti-reflective coating (BARC); sectioning the silicon wafer to measure BARC thicknesses at different profiles; coating the BARC of different measured thicknesses on two flat plates, coating photoresist and exposing respectively; collecting OPC original data of different thicknesses; establishing OPC models of different thicknesses according to the original data; obtaining overlapped region of the crossover layer film and lower layer film through AND operation; amplifying the overlapped region by preset amount to obtain transition region of the crossover layer film; applying the OPC models of different thicknesses to different regions to obtain photolithography mask dimensions of the overlapped region, the transition region and regions outside the two regions. The inventioncan give precise photolithography pattern under different lower layer pattern profiles, and improve photolithography dimension uniformity and controllability.
Description
Technical field
The present invention relates to a kind of SIC (semiconductor integrated circuit) method of manufacturing technology, particularly relate to a kind of optical proximity correction method of crossing over pattern.
Background technology
Existing optical approach effect correction (Optical Proximity Correction, OPC) in the method for the accuracy of OPC modeling, can carry out modeling by the graph data that is collected on the flat plate, described flat plate refers to only have different retes, but not having the silicon chip of lower floor's figure also is only to have smooth membrane structure on the described silicon chip, do not have and comprise step-like graphic structure.But on the silicon chip of general product, often all can comprise lower floor's graphic structure, adopt existing OPC method just can not reflect the pattern of lower floor's figure for the impact of OPC modeling, so OPC model itself has also lacked the technology covering power for the pattern of lower floor's figure.
Having leap lower floor pattern in the existing technique is the leap tunic of the lower membrane of step difference d＞2700 dusts, and the method for doing the correction of OPC figure for this lower floor's figure pattern with large step difference becomes an important problem.As shown in Figure 1, be existing structure vertical view with leap tunic of lower floor's figure pattern; As shown in Figure 2, be the sectional view along the A axle among Fig. 1.By Fig. 1 and Fig. 2 as can be known, silicon chip 1 be formed with lower membrane 2 and shallow trench isolation from, described shallow trench isolation is offed normal in all sides of described lower membrane 2, and the oxide layer 3 among Fig. 2 has comprised sidewall oxide and the top oxide layer of described shallow trench isolating oxide layer and described lower membrane 2; Described lower membrane 2 and described shallow trench isolation from also be formed with and cross over tunic 4, described leap tunic 4 crossed over described lower membrane 2 and described shallow trench isolation from; Be formed with one at described lower membrane 2 places and highly be the step of d.
Existing a kind of optical proximity correction method of crossing over pattern is to adopt bottom antireflective coating (Bottom Anti-Reflection Coating, BARC) reduce the method for step difference, as shown in Figure 3, be to form sectional view after crossing over tunic 4 and being coated with BARC at the silicon chip 1 with lower membrane 2 patterns; By being coated with one deck bottom antireflective coating 5 at described silicon chip 1, described bottom antireflective coating 5 is greater than the thickness two that forms at the step place at the thickness one that forms without the step place, thereby can reduce the step difference on the silicon chip 1.Although the method that the existing BARC of employing fills can reduce step difference, but the thickness of BARC on the height pattern is the different of described thickness one and described thickness two, can cause photoetching process (Critical Dimension lithographic dimensioned on the height pattern, CD) difference, so that the lithographic dimensioned generation larger variation of described leap tunic 4 when crossing over described lower membrane 2, thereby affected lithographic accuracy.
Summary of the invention
Technical matters to be solved by this invention provides a kind of optical proximity correction method of crossing over pattern, can obtain accurately litho pattern when having different lower floors figure pattern, can improve lithographic dimensioned homogeneity and controllability.
For solving the problems of the technologies described above, the optical proximity correction method of leap pattern provided by the invention comprises the steps:
Step 1, form to cross over tunic at the silicon chip with lower membrane step appearance, and be coated with bottom antireflective coating at described leap tunic.
Step 3, to form bottom antireflective coating that thickness is thickness one, form thickness in flat plate two in flat plate one be the bottom antireflective coating of thickness two; Distinguish resist coatings, also expose with identical etching condition in described flat plate one and described flat plate two again; Collect the optical approach effect correction raw data one that obtains described thickness one in described flat plate one, collect the optical approach effect correction raw data two that obtains described thickness two in described flat plate two.
Step 6, the predetermined overlapping magnification region that measures is amplified in described overlapping region; Described overlapping magnification region and described leap tunic figure are done and operated, do the transitional region that not operation obtains described leap tunic with described overlapping region again.
Step 7, described optical approach effect correction model one is applied to zone outside described overlapping region and the described transitional region also is that described overlapping region adds the size that zone outside the described transitional region obtains the reticle in the zone outside described overlapping region and the described transitional region; Described optical approach effect correction model two is applied to described overlapping region to be obtained the reticle size of described overlapping region or uses rule-based optical approach effect correction model to be applied to the reticle size that described overlapping region obtains described overlapping region; Use process of heterodyning to calculate the reticle size of described transitional region.
The requirement that described bottom antireflective coating satisfies and follow-up photoresist mates.
Amplifying predetermined amount described in the step 6 and be according to thickness is that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of described thickness one limits; Because bottom antireflective coating changes to described thickness from described thickness two transitional region is arranged for the moment, the zone that changes 5%～20% thickness on the basis of described thickness one all is described transitional region, also can be used in the zone that changes 5%～20% thickness on the basis of described thickness one and define the predetermined amount of described amplification.
Perhaps, the changing value that amplifies the photoresist critical size on the photoresist of bottom antireflective coating that predetermined amount is described thickness two by the photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and coupling described in the step 6 is calculated.Because the predetermined amount of described amplification is in order to obtain described transitional region, and in fact the thickness of the bottom antireflective coating of transitional region changes to described thickness one from described thickness two, also can be that photoresist critical size on the photoresist of the bottom antireflective coating of described thickness one and coupling gradually changes to thickness from the photoresist critical size on the photoresist of the bottom antireflective coating of thickness two and coupling at the critical size of the photoresist that the bottom antireflective coating of described transitional region mates, so the basis of the photoresist critical size on the photoresist of the bottom antireflective coating of described thickness one and coupling can be changed 5%～20% critical size all is transitional region, also namely defines the predetermined amount of described amplification with this zone.
The inventive method is carried out respectively the optical approach effect correction by the different-shape place to lower floor's figure and is set up corresponding model and increase reckoning to the optical approach effect correction of the transitional region between different-shape, can access accurately litho pattern and can improve lithographic dimensioned homogeneity and controllability.
Description of drawings
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 is the structure vertical view that has the leap tunic figure on the silicon chip with lower membrane pattern now;
Fig. 2 is the sectional view along the A axle among Fig. 1;
Fig. 3 is the sectional view after the silicon chip with lower membrane pattern forms the leap tunic and is coated with BARC;
Fig. 4 is the process flow diagram of the inventive method.
Embodiment
As shown in Figure 4, be the process flow diagram of the inventive method.Embodiment of the invention method comprises the steps:
Step 1, as shown in Figure 3 forms at the silicon chip 1 with lower membrane 2 step appearances and to cross over tunic 4, and at described leap tunic 4 coating bottom antireflective coatings 5.The requirement that the type of described bottom antireflective coating 5 satisfies and follow-up photoresist mates.
Step 3, to form bottom antireflective coating that thickness is thickness one, form thickness in flat plate two in flat plate one be the bottom antireflective coating of thickness two; Distinguish resist coatings, also expose with identical etching condition in described flat plate one and described flat plate two again; Collect the optical approach effect correction raw data one that obtains described thickness one in described flat plate one, collect the optical approach effect correction raw data two that obtains described thickness two in described flat plate two.Described flat plate refers to only have different retes, does not still have the silicon chip of lower floor's figure.
Step 6, the predetermined overlapping magnification region that measures is amplified in described overlapping region; Described overlapping magnification region and described leap tunic figure are done and operated, do the transitional region that not operation obtains described leap tunic with described overlapping region again.Wherein, the predetermined amount of described amplification is to be that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of described thickness one limits according to thickness; Because bottom antireflective coating changes to described thickness from described thickness two transitional region is arranged for the moment, the zone that changes 5%～20% thickness on the basis of described thickness one all is described transitional region, also can be used in the zone that changes 5%～20% thickness on the basis of described thickness one and define the predetermined amount of described amplification.Perhaps, the changing value that amplifies the photoresist critical size on the photoresist of bottom antireflective coating that predetermined amount is described thickness two by the photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and coupling described in the step 6 is calculated.Because the predetermined amount of described amplification is in order to obtain described transitional region, and in fact the thickness of the bottom antireflective coating of transitional region changes to described thickness one from described thickness two, also can be that photoresist critical size on the photoresist of the bottom antireflective coating of described thickness one and coupling gradually changes to thickness from the photoresist critical size on the photoresist of the bottom antireflective coating of thickness two and coupling at the critical size of the photoresist that the bottom antireflective coating of described transitional region mates, so the basis of the photoresist critical size on the photoresist of the bottom antireflective coating of described thickness one and coupling can be changed 5%～20% critical size all is transitional region, also namely defines the predetermined amount of described amplification with this zone.
Step 7, described optical approach effect correction model one is applied to the size that zone outside described overlapping region and the described transitional region obtains the reticle in the zone outside described overlapping region and the described transitional region; Described optical approach effect correction model two is applied to described overlapping region to be obtained the reticle size of described overlapping region or uses rule-based optical approach effect correction model to be applied to the reticle size that described overlapping region obtains described overlapping region; Use process of heterodyning to calculate the reticle size of described transitional region.
More than by specific embodiment the present invention is had been described in detail, but these are not to be construed as limiting the invention.In the situation that does not break away from the principle of the invention, those skilled in the art also can make many distortion and improvement, and these also should be considered as protection scope of the present invention.
Claims (3)
1. an optical proximity correction method of crossing over pattern is characterized in that, comprises the steps:
Step 1, form to cross over tunic at the silicon chip with lower membrane step appearance, and be coated with bottom antireflective coating at described leap tunic;
Step 2, the formed described silicon chip of step 1 is cut into slices, and measure the thickness of described bottom antireflective coating, obtain respectively without the thickness one at step place and the thickness two at step place is arranged;
Step 3, to form bottom antireflective coating that thickness is thickness one, form thickness in flat plate two in flat plate one be the bottom antireflective coating of thickness two; The flat plate of described flat plate one and described flat plate two refers to only have different retes, but not having the silicon chip of lower floor's figure also is only to have smooth membrane structure on the described silicon chip, do not have and comprise step-like graphic structure; Distinguish resist coatings, also expose with identical etching condition in described flat plate one and described flat plate two again; Collect the optical approach effect correction raw data one that obtains described thickness one in described flat plate one, collect the optical approach effect correction raw data two that obtains described thickness two in described flat plate two;
Step 4, set up the optical approach effect correction model one of not crossing over described lower membrane, set up the optical approach effect correction model two of crossing over described lower membrane according to described optical approach effect correction raw data two according to described optical approach effect correction raw data one;
Step 5, by to described leap tunic figure and described lower membrane figure do Boolean calculation with operation, obtain the overlapping region of described leap tunic and described lower membrane;
Step 6, the predetermined overlapping magnification region that measures is amplified in described overlapping region; Described overlapping magnification region and described leap tunic figure are done and operated, do the transitional region that not operation obtains described leap tunic with described overlapping region again;
Step 7, described optical approach effect correction model one is applied to the size that zone outside described overlapping region and the described transitional region obtains the reticle in the zone outside described overlapping region and the described transitional region; Described optical approach effect correction model two is applied to described overlapping region to be obtained the reticle size of described overlapping region or uses rule-based optical approach effect correction model to be applied to the reticle size that described overlapping region obtains described overlapping region; Use process of heterodyning to calculate the reticle size of described transitional region.
2. cross over as claimed in claim 1 the optical proximity correction method of pattern, it is characterized in that: the requirement that described bottom antireflective coating satisfies and follow-up photoresist mates.
3. cross over as claimed in claim 1 the optical proximity correction method of pattern, it is characterized in that: amplifying predetermined amount described in the step 6 and be according to thickness is that the variable quantity of variation in thickness 5%～20% of the bottom antireflective coating of described thickness one limits; The changing value of the photoresist critical size on the bottom antireflective coating that perhaps is described thickness two by the photoresist critical size on the photoresist of the bottom antireflective coating of thickness one and coupling and thickness and the photoresist of coupling is calculated.
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| CN103513506B (en) * | 2012-06-19 | 2016-04-13 | 上海华虹宏力半导体制造有限公司 | Optical proximity correction method |
| CN105223770B (en) * | 2014-05-27 | 2019-07-23 | 无锡华润上华科技有限公司 | The method and system of specially treated figure is marked in optical approach effect amendment |
| CN119208129B (en) * | 2024-11-26 | 2025-03-21 | 浙江创芯集成电路有限公司 | Ion implantation layer correction method, device and semiconductor device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200710B1 (en) * | 1998-03-18 | 2001-03-13 | Nikon Corporation | Methods for producing segmented reticles |
| US6576486B2 (en) * | 2001-01-17 | 2003-06-10 | United Microelectronics Corp. | Unlanded process in semiconductor manufacture |
| CN101349861A (en) * | 2007-07-19 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method of smoothing regulation type optical approach correcting light mask pattern |
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| JP5233219B2 (en) * | 2007-09-20 | 2013-07-10 | 富士通セミコンダクター株式会社 | Semiconductor device manufacturing method and photomask design method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6200710B1 (en) * | 1998-03-18 | 2001-03-13 | Nikon Corporation | Methods for producing segmented reticles |
| US6576486B2 (en) * | 2001-01-17 | 2003-06-10 | United Microelectronics Corp. | Unlanded process in semiconductor manufacture |
| CN101349861A (en) * | 2007-07-19 | 2009-01-21 | 上海华虹Nec电子有限公司 | Method of smoothing regulation type optical approach correcting light mask pattern |
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Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HUAHONG NEC ELECTRONICS CO LTD, SHANGHAI Effective date: 20131223 |
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Effective date of registration: 20131223 Address after: 201203 Shanghai city Zuchongzhi road Pudong New Area Zhangjiang hi tech Park No. 1399 Patentee after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201206, Shanghai, Pudong New Area, Sichuan Road, No. 1188 Bridge Patentee before: Shanghai Huahong NEC Electronics Co., Ltd. |