CN102534552B - Chemical vapor deposition device - Google Patents
Chemical vapor deposition device Download PDFInfo
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- CN102534552B CN102534552B CN201010612665.XA CN201010612665A CN102534552B CN 102534552 B CN102534552 B CN 102534552B CN 201010612665 A CN201010612665 A CN 201010612665A CN 102534552 B CN102534552 B CN 102534552B
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 34
- 238000010438 heat treatment Methods 0.000 claims abstract description 90
- 230000005855 radiation Effects 0.000 claims abstract description 55
- 230000005540 biological transmission Effects 0.000 claims abstract description 47
- 238000006243 chemical reaction Methods 0.000 claims abstract description 21
- 229910052751 metal Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 26
- 238000002310 reflectometry Methods 0.000 claims description 19
- 238000005498 polishing Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 238000007747 plating Methods 0.000 claims description 11
- 239000010453 quartz Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 239000010931 gold Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000004332 silver Substances 0.000 claims description 3
- 239000000919 ceramic Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 11
- 238000012423 maintenance Methods 0.000 abstract description 6
- 238000004140 cleaning Methods 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 1
- 239000012495 reaction gas Substances 0.000 abstract 1
- 239000010408 film Substances 0.000 description 23
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 20
- 239000011521 glass Substances 0.000 description 14
- 239000007789 gas Substances 0.000 description 12
- 239000000376 reactant Substances 0.000 description 12
- 235000012239 silicon dioxide Nutrition 0.000 description 11
- 239000011787 zinc oxide Substances 0.000 description 10
- 229960001296 zinc oxide Drugs 0.000 description 10
- 238000000151 deposition Methods 0.000 description 9
- 230000003595 spectral effect Effects 0.000 description 8
- 239000010409 thin film Substances 0.000 description 8
- 238000010521 absorption reaction Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 238000006557 surface reaction Methods 0.000 description 6
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000003628 erosive effect Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 239000000292 calcium oxide Substances 0.000 description 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229960001866 silicon dioxide Drugs 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
Images
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a chemical vapor deposition device, which comprises a reaction chamber, a heating substrate arranged in the reaction chamber and used for heating a workpiece to be machined, and a transmission structure arranged above the heating substrate and used for transmitting the workpiece to be machined, wherein the heating substrate generates heat radiation in the process of machining the workpiece to be machined; and the transmission structure transmits or reflects the heat radiation projected to the transmission structure. By the chemical vapor deposition device, the transmission structure can be prevented from being heated by the heat radiation generated by the heating substrate to avoid raising temperature, so that a temperature condition that a reaction gas is reacted on the surface of the transmission structure to form a film is broken, the cleaning and replacement frequency of the transmission structure is greatly reduced, and the maintenance cost of equipment is reduced.
Description
Technical field
The present invention relates to solar cell producing apparatus field, particularly a kind of chemical vapor deposition unit for the manufacture of thin-film solar cells.
Background technology
In many solar cell application technology, thin-film solar cells is because of pollution-free, and less energy consumption is with low cost, can scale operation etc. series of advantages, be widely used in Aeronautics and Astronautics and daily life.Common thin-film solar cells comprises: amorphous silicon film solar battery, copper indium gallium selenide film battery and Cadimium telluride thin film battery.In publication number is 101027749 and 101226967 Chinese invention patent file, can find the formation method of how above-mentioned solar film battery.
In the manufacture of thin-film solar cells, the deposition of transparent conductive oxide film is important process procedure, and described transparent conductive oxide film is for making the electrode of thin-film solar cells, and common described transparent conductive oxide is zinc oxide.The electrode manufacturing process of described thin-film solar cells specifically comprises: adopt chemical vapor deposition unit, using the zinc ethyl (DEZ) of gaseous state with water vapor as reactant gases, depositing zinc oxide film on glass substrate.In order to allow deposition of zinc oxide in described glass baseplate surface, in described chemical vapor deposition unit, glass substrate is positioned on heating base, utilize the mode of heat transmission or radiation heating, glass substrate is heated, make the temperature of glass substrate rise to the temperature of reaction of described zinc ethyl and water vapor, above-mentioned reactant gases just can react on the surface of glass substrate, forms required zinc-oxide film.
There are the following problems for existing chemical vapor deposition unit: be no matter that radiation heating or heat are transmitted heating, described heating base all can emitted radiation energy when glass substrate is heated, and produces thermal radiation.Described thermal radiation is absorbed by other component in chemical vapor deposition unit reaction chamber, and other component are heated up.For example, the delivery roll using as transmission glass substrate is arranged at heating base top conventionally, nearest apart from heating base, is easy to heated intensification, therefore the reactant gases that has part reacts on the surface of described delivery roll, and formation of deposits zinc-oxide film.In the use procedure of chemical vapor deposition unit, along with the increase of rotation, the variation of heat condition and the film thickness on delivery roll surface of delivery roll, the zinc-oxide film on above-mentioned delivery roll surface is peeled off the most at last and is come off, and fall on heating base thereunder, destroy the closeness of contact of heating base and glass substrate, or directly affect the heats of heating base, finally cause the glass substrate inequality of being heated, infringement processing quality.
Summary of the invention
The object of this invention is to provide a kind of chemical vapor deposition unit, can prevent that reactant gases in reaction chamber is in transmission structure surface reaction film forming.
A kind of chemical vapor deposition unit provided by the invention, comprising: reaction chamber; Be arranged at the heating base in reaction chamber, for heating workpiece to be processed; Transmission structure, is arranged at described heating base top for transmitting workpiece to be processed; Described heating base produces thermal radiation when heating workpiece to be processed, and described transmission structure makes projection thermal radiation thereon produce transmission or reflection.
Preferably, described transmission structure produces when heating workpiece to be processed projection described heating base thereon thermal-radiating transmissivity or reflectivity are greater than 0.9.
Optionally, described transmission structure can be columned delivery roll.
Optionally, described heating base adopts radiation heating also can adopt heat to transmit heating.
Optionally, the material of described delivery roll is quartz.
Optionally, described delivery roll comprises axis body and is formed at the reflecting layer on described axis body surface.Described reflecting layer comprises polishing metal layer.Described plating polishing metal layer is gold and silver, copper.Preferably, described reflecting layer also comprises the dielectric layer that is formed at plating layer surface, polishing metal, and described plating polishing metal layer and described dielectric layer form inter metal dielectric reflectance coating.
Compared with prior art, apparatus of the present invention have the following advantages:
(1) heating base produces thermal radiation when heating workpiece to be processed, the transmission structure of chemical vapor deposition unit of the present invention can make projection thermal radiation thereon produce transmission or reflection, reduce described transmission structure to described thermal-radiating specific absorption, make transmission structure be not easy absorptive thermal radiation and heat up, and then destruction reactant gases is at the temperature condition of transmission structure surface reaction film forming, significantly reduce cleaning and the replacement frequency of transmission structure, and then reduce the maintenance cost of equipment.
(2) concrete, described transmission structure can be columned delivery roll, simple in structure and be easy to transmit reposefully workpiece to be processed.
(3) material of described delivery roll can adopt transparent quartz, and described quartz has very good transmissivity to most of thermal radiation especially ir radiation, is not easy to absorb described thermal radiation and heats up.
(4) described delivery roll can also be made into the cylindrical shaft body structure with reflecting layer, described reflecting layer can comprise electroplates polishing metal layer, the surface of further described plating polishing metal layer also has dielectric layer, both form inter metal dielectric reflectance coating, further improve thermal-radiating reflectivity, can make equally delivery roll be not easy absorptive thermal radiation and heat up.
Accompanying drawing explanation
Fig. 1 is the device schematic diagram of chemical vapor deposition unit of the present invention;
Fig. 2 is the schematic diagram of the delivery roll of first embodiment of the invention;
Fig. 3 is the schematic diagram of the delivery roll of second embodiment of the invention;
Fig. 4 is the diagrammatic cross-section of the delivery roll of second embodiment of the invention.
Embodiment
In existing chemical vapor deposition unit, no matter be to adopt radiation heating or heat to transmit heating, heating base all can produce thermal radiation when work, and described thermal radiation is the delivery roll of the heating side of being located thereon easily, and make reactant gases in delivery roll surface reaction, and formation of deposits film.
The present invention is by selecting the material making transmission structure above-mentioned thermal radiation to height transmissivity or reflectivity, reduce described transmission structure to described thermal-radiating specific absorption, make described transmission structure be not easy to absorb described thermal radiation and heat up, destroying the temperature condition of reactant gases in transmission structure surface reaction film forming.
Fig. 1 is the device schematic diagram of chemical vapor deposition unit of the present invention.As shown in Figure 1, chemical vapor deposition unit of the present invention comprises: reaction chamber 100; Be arranged in described reaction chamber 100 for heating the heating base 101 of workpiece to be processed 103; Be positioned at described heating base 101 tops, for transmitting the transmission structure 102 of workpiece to be processed 103.
When carrying out chemical vapour deposition reaction, described heating base 101 can contact with described workpiece to be processed 103, the mode of logical heat transfer heats workpiece to be processed, can also directly not contact with described workpiece to be processed 103, and by thermal-radiating mode, workpiece to be processed is heated, make the surface temperature of workpiece to be processed 103 rise to the temperature of reaction of reactant gases, so that reactant gases is in the surface deposition film forming of workpiece to be processed 103.
Concrete, on described heating base 101, can be provided with the direct contact heaters such as resistive heater, ceramic heating flake, can also be provided with the radiation heaters such as Infrared Heating fluorescent tube.
Described heating base 101 produces thermal radiation when heating workpiece to be processed, and described transmission structure 102 makes projection thermal radiation thereon produce transmission or reflection.
Concrete, described transmission structure 102 can be columniform delivery roll.Multiple delivery rolls are equidistantly arranged above heating base 101, when above-mentioned delivery roll rotates, just can transmit tabular workpiece to be processed, such as glass substrate etc.Described delivery roll has transmission simple in structure feature stably.Certain transmission structure of the present invention 102 is not limited to above-mentioned cylindrical delivery roll, can also be other transmission rigs, such as mechanical arm, transport tape etc.
According to thermal-radiating fundamental law, emitted radiation can be the natural characteristics of material.When the electronics of atom inside heats up and vibrates, produce the Electric and magnetic fields alternately changing, send hertzian wave to spatial, radiation that Here it is.Due to the former of self temperature or thermal motion thereby excite the electromagnetic wave propagation of generation, be called thermal radiation.
Even if the direct contact heater therefore heating by thermaltransmission mode, under the condition of high temperature, also can be to surrounding emission of thermal radiation, above-mentioned thermal radiation is generally invisible light and is positioned at infrared band.Directly utilize the difference of the radiation heater of radiation heating to be only with Infrared Heating fluorescent tube etc., the thermal-radiating spectral radiance power producing and heating wave band are different.Described spectral radiance power refers to the value of the full wavelength energy that transmitting object per unit surface-area launches to half spherical space within the unit time.
When thermal radiation is projeced on object, follow equally the rule of visible ray, wherein part is absorbed by object, and part is reflected, and all the other are transmitted through object.Wherein by the part thermal radiation that object absorbed, be converted into heat energy, all the other are reflected or the part of transmission cannot be converted into heat energy.
In the process of above-mentioned absorption, reflection and transmission, can be according to energy balance relations, define corresponding specific absorption α, reflectivity ρ and transmissivityτ.Described specific absorption α, reflectivity ρ and transmissivityτ have following relation:
Specific absorption α+reflectivity ρ+transmissivityτ=1;
Therefore be easy to push away, object is larger to thermal-radiating reflectivity ρ or transmissivityτ, and specific absorption α is less, is more not easy thermal radiation to be converted into heat energy, is also more not easy by thermal radiation heat temperature raising.
Based on above-mentioned principle, the present invention avoids transmission structure 102 to absorb the thermal radiation that heating base 101 produces when work, can to the mode of described thermal-radiating transmissivityτ or reflectivity ρ, realize by improving transmission structure 102.But no matter adopt which kind of mode, all need the thermal radiation first heating base 101 being produced when working to analyze.
First, can measure and calculate spectral radiance power and the heating wave band of heating base 101 under working temperature.
If heating base 101 adopts the radiation heater such as Infrared Heating fluorescent tube, its heating wave band is known, and spectral radiance power also can regulate.And if heating base 101 adopts direct contact heaters such as resistive heater, need above-mentioned parameter to measure.Concrete, in chemical vapor deposition method, when heating base 101, can stablize heat energy is provided, while making workpiece to be processed reach required temperature of reaction, measure the radiating capacity that now heating base 101 is launched, and further according to the volume of heating chamber 100, be also that the radiation scope of heating base 101 is calculated described spectral radiance power.
After to above-mentioned spectral radiance power and heating, wave band analyzes, related data that just can be based on obtaining, carries out the material of transmission structure 102 and selects.Following examples, take delivery roll as example, are introduced the present invention.
Fig. 2 is the schematic diagram of the delivery roll of first embodiment of the invention, and shown in Fig. 1 and Fig. 2, delivery roll is solid cylinder described in the present embodiment, adopts quartz material.Quartz is a kind of inorganic mineral, and is mixture; Its main component is silicon-dioxide, conventionally contains a small amount of impurity component such as aluminium sesquioxide, calcium oxide and magnesium oxide etc., is transparent or semitransparent crystal.Physical properties and chemical property are all very stable, and high temperature resistant, are therefore applicable to being very much used in the such hot environment of chemical vapor deposition unit.By controlling the content of each impurity component in quartz, can regulate the thermal-radiating transmissivity of quartz for different-waveband.
Therefore based on the aforementioned thermal-radiating analysis that heating base is produced when working, be easy to select corresponding quartz material, make described quartz material there is maximum transmissivity to the thermal radiation of specific band.Take zinc-oxide film depositing operation as example, described chemical vapor deposition unit is when carrying out zinc-oxide film depositing operation, workpiece to be processed is glass substrate, temperature of reaction is generally 180 ℃～220 ℃, under this temperature condition, if described heating base 101 adopts the direct contact heater such such as resistive heater, the thermal radiation optical spectrum radial force of generation a little less than, heating wave band narrower.Transparent quartz material can easier reach more than 0.9 described thermal-radiating transmissivity, described in the present embodiment, delivery roll reaches the transmissivity of this scope, just can meet conventional process requirements, thermal radiation impact heats up and is not obvious, its temperature can be stabilized in below described temperature of reaction, thereby has avoided zinc ethyl and the water vapour surface reaction film forming at delivery roll.
Fig. 3 is the schematic diagram of the delivery roll of second embodiment of the invention, Fig. 4 is the diagrammatic cross-section of described delivery roll, shown in Fig. 1, Fig. 3 and Fig. 4, the delivery roll described in the present embodiment is solid cylinder, comprises columniform axis body 20 and is formed at the reflecting layer 30 on described axis body surface.Wherein said axis body 20 can be used conventional metal or other resistant to elevated temperatures materials.For reflective thermal radiation, described reflecting layer 30 has higher reflectivity to described thermal radiation in 30, described reflecting layer, meanwhile, also has high temperature resistant, anti abrasive feature to meet the mechanical transfer demand of delivery roll, to avoid affecting the maintenance cost of delivery roll.
As preferred scheme, described reflecting layer 30 can comprise electroplates polishing metal layer 31, through the metal level of plating film forming and carrying out polished finish and conventionally for optical, electrical magnetic wave and thermal radiation, there is high reflectivity, and itself there is high temperature resistant, anti abrasive feature.Concrete, described metal level can be the metals such as gold and silver or copper.Take gold as example, through the golden metallic surface of polished finish, to ultrared reflectivity, can reach more than 0.98.
As further preferred version, described reflecting layer 30 can also comprise the dielectric layer 32 that is formed at plating layer 31 surface, polishing metal, above-mentioned plating polishing metal layer 31 can form inter metal dielectric reflectance coating with described dielectric layer 32, can further strengthen the thermal-radiating reflectivity to specific band.Described dielectric layer 32 can also stop plating polishing metal layer 31 to react with acid reactant gases, avoids delivery roll because of the reduction of reactant gases corrosion reflectivity, thereby reduces the maintenance cost of delivery roll.
It is pointed out that in reflecting layer 30, thickness and the reflectivity relation of electroplating polishing metal layer 31 are less, but directly have influence on the wear resistance in reflecting layer 30; The thickness of dielectric layer 32 not only has influence on described reflectivity, also has influence on the erosion resistance of electroplating polishing metal layer 31.Therefore when selecting the thickness in reflecting layer 30, need to consider in actual production process atmosphere surrounding, the impact of the factors such as the rotating speed of delivery roll 102.
Still take zinc-oxide film depositing operation as example, described chemical vapor deposition unit is when carrying out zinc-oxide film depositing operation, workpiece to be processed is glass substrate, temperature of reaction is 180 ℃～220 ℃, under this temperature condition, if heating base 101 adopts Infrared Heating fluorescent tube to carry out radiation heating to glass substrate, the ultrared spectral radiance power of its generation is stronger, and heating wave band is also wider.Above-mentioned reflecting layer 30 can adopt the inter metal dielectric reflectance coating being comprised of gold thin film and transparent dielectric, and itself just has extremely strong erosion resistance and wear resistance described metal, and makes delivery roll 102 to reach high reflectivity to described infrared rays.After common described reflectivity exceedes 0.9, described delivery roll 102 can meet conventional process requirements, thermal radiation impact heats up not obvious, and its temperature can be stabilized in below described temperature of reaction equally, avoids zinc ethyl and the water vapour surface reaction film forming at delivery roll.
To sum up embodiment, in chemical vapor deposition unit of the present invention, according to heating base, when working, produce thermal-radiating spectral radiance power and heating wave band, described material or the structure of selecting to have accordingly high-transmission rate or reflectivity for transmitting the transmission structure of workpiece to be processed, to avoid carrying out in chemical vapor deposition method process, be subject to the thermal radiation impact of heating base and heat up excessively, effectively reducing reactant gases in the chemical vapor deposition unit reaction chamber probability in transmission structure surface deposition film forming.And then the work-ing life of improving equipment, extend maintenance intervals, reduce maintenance cost.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (9)
1. a chemical vapor deposition unit, comprising: reaction chamber; Be arranged at the heating base in reaction chamber, for heating workpiece to be processed; Transmission structure, is arranged at described heating base top for transmitting workpiece to be processed; It is characterized in that, described heating base produces thermal radiation when heating workpiece to be processed, and described transmission structure makes projection thermal radiation thereon produce transmission;
Described transmission structure is columned delivery roll, and the material of described delivery roll is quartz.
2. chemical vapor deposition unit as claimed in claim 1, is characterized in that, the thermal-radiating transmissivity that described transmission structure produces when heating workpiece to be processed projection described heating base is thereon greater than 0.9.
3. chemical vapor deposition unit as claimed in claim 1 or 2, is characterized in that, described heating base adopts radiation heating.
4. chemical vapor deposition unit as claimed in claim 3, is characterized in that, is provided with Infrared Heating fluorescent tube on described heating base.
5. a chemical vapor deposition unit, comprising: reaction chamber; Be arranged at the heating base in reaction chamber, for heating workpiece to be processed; Transmission structure, is arranged at described heating base top for transmitting workpiece to be processed; It is characterized in that, described heating base produces thermal radiation when heating workpiece to be processed, and described transmission structure makes projection thermal radiation thereon produce reflection;
Described delivery roll comprises cylindrical axis body and is formed at the reflecting layer on described axis body surface;
Described reflecting layer comprises electroplates polishing metal layer, and described reflecting layer also comprises the dielectric layer that is formed at layer surface, described plating polishing metal, and described plating polishing metal layer and described dielectric layer form inter metal dielectric reflectance coating.
6. chemical vapor deposition unit as claimed in claim 5, is characterized in that, the thermal-radiating reflectivity that described transmission structure produces when heating workpiece to be processed projection described heating base is thereon greater than 0.9.
7. the chemical vapor deposition unit as described in claim 5 or 6, is characterized in that, described heating base adopts heat to transmit heating.
8. chemical vapor deposition unit as claimed in claim 7, is characterized in that, is provided with resistive heater or ceramic heating flake on described heating base.
9. chemical vapor deposition unit as claimed in claim 6, is characterized in that, the material of described plating polishing metal layer is gold and silver or copper.
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| CN201010612665.XA CN102534552B (en) | 2010-12-29 | 2010-12-29 | Chemical vapor deposition device |
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| CN201010612665.XA CN102534552B (en) | 2010-12-29 | 2010-12-29 | Chemical vapor deposition device |
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| CN106756890B (en) * | 2016-11-24 | 2019-07-23 | 郑州航空工业管理学院 | A kind of reaction unit of chemical vapor deposition |
| CN108456873B (en) * | 2017-02-22 | 2020-04-28 | 北京北方华创微电子装备有限公司 | Lower electrode structure and process chamber |
| CN112376035B (en) * | 2020-11-02 | 2025-04-22 | 南昌大学 | A reaction device suitable for preparing high-In content InGaN material |
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| US20050000448A1 (en) * | 2003-07-04 | 2005-01-06 | Verreyken Guido | Vapor deposition apparatus |
| CN1607989A (en) * | 2000-09-27 | 2005-04-20 | 埃姆科尔股份有限公司 | Apparatus and method for controlling temperature uniformity of substrates |
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| KR100942203B1 (en) * | 2007-11-07 | 2010-02-11 | 이창재 | In-Line APPC Unit with Top Side Lamp Heating |
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| CN1607989A (en) * | 2000-09-27 | 2005-04-20 | 埃姆科尔股份有限公司 | Apparatus and method for controlling temperature uniformity of substrates |
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