CN102540774A - Cleaning agent for thick-film photoresist - Google Patents
Cleaning agent for thick-film photoresist Download PDFInfo
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- CN102540774A CN102540774A CN2010106040057A CN201010604005A CN102540774A CN 102540774 A CN102540774 A CN 102540774A CN 2010106040057 A CN2010106040057 A CN 2010106040057A CN 201010604005 A CN201010604005 A CN 201010604005A CN 102540774 A CN102540774 A CN 102540774A
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Abstract
The invention discloses a cleaning agent suitable for cleaning thick photoresist and with low etching performance, which contains (a) potassium hydroxide, (b) dissolvent, (c) pentaerythritol, (d) alkylol amine and (e) phloroglucinol. The cleaning agent for the photoresist can also be used for removing the photoresist and other residues on metal, metal alloy or dielectric medium substrates, has low etch rate on metal including copper (Cu) and the like simultaneously, and has good application prospect in microelectronics fields including semiconductor chip cleaning and the like.
Description
Technical field
The present invention relates to a kind of thick film photolithography gluing cleaning agent.
Background technology
In common semiconductor fabrication process; Through going up the mask that forms photoresist, carry out figure transfer after the exposure, after obtaining the circuitous pattern that needs on surfaces such as silicon dioxide, Cu metals such as (copper) and low-k materials; Carry out to peel off residual photoresist before the next process.For example, implant in the technology (bumping technology) at the wafer microballoon, need photoresist to form mask, this mask needs to remove after microballoon is successfully implanted equally, but because this photoresist is thicker, often removes comparatively difficulty fully.Improving removal effect method comparatively commonly used is to adopt to prolong soak time, raising soaking temperature and adopt more to be rich in aggressive solution, but this regular meeting causes the corrosion of wafer substrate and the corrosion of microballoon, thereby causes the remarkable reduction of wafer yield.
At present, the photoresist clean-out system mainly is made up of polar organic solvent, highly basic and/or water etc., through semiconductor wafer being immersed in the clean-out system or utilizing clean-out system flushing semiconductor wafer, removes the photoresist on the semiconductor wafer.Wherein its highly basic commonly used mainly is inorganic metal oxyhydroxide (like potassium hydroxide etc.) and organic hydroxide such as tetramethyl oxyammonia etc.
Like JP1998239865 by TMAH (TMAH), dimethyl sulfoxide (DMSO) (DMSO), 1; 3 '-dimethyl-2-imidazolidinone (DMI) and water etc. are formed alkaline cleaner; Wafer is immersed in this clean-out system the thick film photolithography glue more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate.Its corrosion to the semiconductor wafer base material is slightly high, and can not remove the photoresist on the semiconductor wafer fully, and cleansing power is not enough; WO2006/056298A1 utilizes by TMAH (TMAH), dimethyl sulfoxide (DMSO) (DMSO), and monoethylene glycol (EG) and water are formed alkaline cleaner, are used to clean the photoresist of 50～100 micron thick, simultaneously metallic copper are not had corrosion basically; US6040117 utilizes by TMAH, dimethyl sulfoxide (DMSO) (DMSO), 1; 3 '-dimethyl-2-imidazolidinone (DMI) and water etc. are formed alkaline cleaner; Wafer is got in this clean-out system the thick film photolithography glue more than the 20 μ m that remove under 50～100 ℃ on metal and the dielectric substrate.For example US5529887 forms alkaline cleaner by potassium hydroxide (KOH), alkylene glycol monoalkyl ether, soluble fluoride and water etc. again, wafer is immersed in this clean-out system, at the thick film photolithography glue of removing under 40～90 ℃ on metal and the dielectric substrate.Its corrosion to the semiconductor wafer base material is higher.
This shows, seek the metal corrosion inhibitor of more effective inhibition, such photoresist clean-out system of dicyandiamide solution of the more photoresists of dissolving is made great efforts improved privileged direction.
Summary of the invention
The technical matters that the present invention will solve is exactly that the cleansing power that exists to existing thick film photolithography gluing cleaning agent is not enough or to semiconductor wafer pattern and the stronger defective of base material corrosivity, and provide a kind of to thick film photolithography glue cleansing power by force and to semiconductor wafer pattern and the lower photoresist clean-out system of base material corrosivity.
The present invention solves the problems of the technologies described above the technical scheme that is adopted: a kind of clean-out system that is used for thick film photolithography glue, this clean-out system contain (a) potassium hydroxide (b) solvent (c) pentaerythrite (d) hydramine (e) phloroglucin.Wherein, potassium hydroxide 0.1-6wt%; Solvent 30-95wt%; Pentaerythrite 0.1-15wt%; Hydramine, 1-55wt%; Phloroglucin 0.0001-1wt%, preferred 0.005-0.3wt%.
Solvent described in the present invention can be selected from one or more in sulfoxide, sulfone, pyrrolidone, imidazolidinone, imidazolone, alcohol, ether, the acid amides.What wherein, described sulfoxide was preferable is dimethyl sulfoxide (DMSO); What described sulfone was preferable is sulfolane; What described pyrrolidone was preferable is N-Methyl pyrrolidone, N-ethyl pyrrolidone, N-hydroxyethyl-pyrrolidone, N-cyclohexyl pyrrolidone; What described imidazolidinone was preferable is 1,3-dimethyl-2-imidazolidinone; What described imidazolone was preferable is 1,3-dimethyl-2-imidazolone (DMI); What described acid amides was preferable is dimethyl formamide, dimethyl acetamide; Propylene glycol, diethylene glycol, DPG that described alcohol is preferable; What described ether was preferable is propylene glycol monomethyl ether, dipropylene glycol monomethyl ether.
Hydramine described in the present invention is one or more in monoethanolamine, diethanolamine, triethanolamine, n-propanol amine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine.Having of hydramine is beneficial to raising potassium hydroxide and the solubleness of pentaerythrite in system, and helps the protection of metallic microspheres.
Low etching property photoresist clean-out system of the present invention; Can be at room temperature to the 90 ℃ following photoresist that cleans the above thickness of 100 μ m; And because the phloroglucin that wherein contains, can form layer protecting film, thereby reduce the corrosion of base material on multiple metal such as aluminium, copper, tin, plumbous surface.Concrete grammar is following: the semiconductor wafer that will contain photoresist immerses the photoresist clean-out system of the low etching property among the present invention, after room temperature to 90 ℃ is soaked the suitable time down, takes out the washing back and dries up with high pure nitrogen.
Low etching property photoresist clean-out system of the present invention is particularly useful for the cleaning of thicker (thickness is greater than 100 microns) photoresist, and Cu metals such as (copper) is had lower etch-rate, can effectively suppress the corrosion of copper, aluminium and metallic microspheres simultaneously.
Embodiment
Come further to set forth the present invention through embodiment below.
The component and the content of the clean-out system among each embodiment of table 1 (Examples)
Annotate: NA does not add this component.
In order further to investigate the cleaning situation of this based cleaning liquid; The present invention has adopted following technological means: (thickness is about 120 microns to be about to contain negativity esters of acrylic acid photoresist; And through overexposure and etching) semiconductor wafer (salient point encapsulation wafer) immerse in the clean-out system; Under 25～90 ℃, utilize constant temperature oscillator with about 60 rev/mins vibration frequency vibration 15～120 minutes, behind deionized water wash, dry up then with high pure nitrogen.The cleaning performance of photoresist and cleaning fluid are as shown in table 2 to the corrosion situation of wafer.
Table 2 embodiment cleans situation to wafer
Can find out that from table 2 cleaning fluid of the present invention has excellent cleaning effect to thick film photolithography glue, the serviceability temperature scope is wide, simultaneously metallic microspheres and metallic copper etc. is had the effect of corrosion inhibition preferably.
Claims (6)
1. a thick film photolithography gluing cleaning agent comprises: potassium hydroxide, solvent, pentaerythrite, hydramine and phloroglucin.
2. clean-out system according to claim 1 is characterized in that said potassium hydroxide content is 0.1-6wt%, and said solvent is 30-95wt%; Said pentaerythrite content is 0.1-15wt%; Said pure amine content is 1-55wt%; Said phloroglucin content is 0.0001-1wt%.
3. like the said clean-out system of claim 2, it is characterized in that said phloroglucin content is 0.005-0.3wt%.
4. clean-out system according to claim 1 is characterized in that described solvent is selected from one or more in sulfoxide, sulfone, pyrrolidone, imidazolidinone, imidazolone, alcohol, ether and the acid amides.
5. like the said clean-out system of claim 4, it is characterized in that described sulfoxide is a dimethyl sulfoxide (DMSO); Described sulfone is a sulfolane; Described pyrrolidone is N-Methyl pyrrolidone, N-ethyl pyrrolidone, N-hydroxyethyl-pyrrolidone and/or N-cyclohexyl pyrrolidone; Described imidazolidinone is 1,3-dimethyl-2-imidazolidinone; Described imidazolone is 1,3-dimethyl-2-imidazolone (DMI); Described acid amides is dimethyl formamide and/or dimethyl acetamide; Described alcohol is propylene glycol, diethylene glycol or DPG; Described ether is propylene glycol monomethyl ether and/or dipropylene glycol monomethyl ether.
6. clean-out system according to claim 1 is characterized in that, described hydramine is for being selected from monoethanolamine, diethanolamine, triethanolamine, n-propanol amine, isopropanolamine, 2-(lignocaine) ethanol, ethyldiethanolamine and the diglycolamine one or more.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106040057A CN102540774A (en) | 2010-12-21 | 2010-12-21 | Cleaning agent for thick-film photoresist |
| PCT/CN2011/002135 WO2012083587A1 (en) | 2010-12-21 | 2011-12-19 | Cleaning liquid for thick film photoresists |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010106040057A CN102540774A (en) | 2010-12-21 | 2010-12-21 | Cleaning agent for thick-film photoresist |
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| Publication Number | Publication Date |
|---|---|
| CN102540774A true CN102540774A (en) | 2012-07-04 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2010106040057A Pending CN102540774A (en) | 2010-12-21 | 2010-12-21 | Cleaning agent for thick-film photoresist |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103809392A (en) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | Cleaning liquid for removing photoresist residues |
| CN103838091A (en) * | 2012-11-22 | 2014-06-04 | 安集微电子科技(上海)有限公司 | Cleaning fluid for removing photoresist |
| CN103869636A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子科技(上海)有限公司 | Photoresist remover |
| CN108026492A (en) * | 2015-08-05 | 2018-05-11 | 弗萨姆材料美国有限责任公司 | Photoresist cleaning composition for use in photolithography and method for treating substrate using the same |
| CN108255027A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子（上海）有限公司 | A kind of photoresist cleaning solution |
| EP3553811A1 (en) * | 2018-04-12 | 2019-10-16 | Versum Materials US, LLC | Photoresist stripper |
| WO2022232751A1 (en) | 2021-04-30 | 2022-11-03 | Versum Materials Us, Llc | Compositions for removing a photoresist from a substrate and uses thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050119143A1 (en) * | 1999-01-27 | 2005-06-02 | Egbe Matthew I. | Compositions for the removal of organic and inorganic residues |
| CN101364056A (en) * | 2007-08-10 | 2009-02-11 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| CN101424887A (en) * | 2007-11-02 | 2009-05-06 | 安集微电子（上海）有限公司 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
-
2010
- 2010-12-21 CN CN2010106040057A patent/CN102540774A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050119143A1 (en) * | 1999-01-27 | 2005-06-02 | Egbe Matthew I. | Compositions for the removal of organic and inorganic residues |
| CN101364056A (en) * | 2007-08-10 | 2009-02-11 | 安集微电子（上海）有限公司 | Detergent for photo resist |
| CN101424887A (en) * | 2007-11-02 | 2009-05-06 | 安集微电子（上海）有限公司 | Semiconductor wafer metal substrate web corrosion prevention liquid and its use method |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103809392B (en) * | 2012-11-12 | 2020-03-13 | 安集微电子科技（上海）股份有限公司 | Cleaning solution for removing photoresist residues |
| CN103809392A (en) * | 2012-11-12 | 2014-05-21 | 安集微电子科技(上海)有限公司 | Cleaning liquid for removing photoresist residues |
| CN103838091A (en) * | 2012-11-22 | 2014-06-04 | 安集微电子科技(上海)有限公司 | Cleaning fluid for removing photoresist |
| CN103869636A (en) * | 2012-12-17 | 2014-06-18 | 安集微电子科技(上海)有限公司 | Photoresist remover |
| CN108026492A (en) * | 2015-08-05 | 2018-05-11 | 弗萨姆材料美国有限责任公司 | Photoresist cleaning composition for use in photolithography and method for treating substrate using the same |
| CN108026492B (en) * | 2015-08-05 | 2021-05-28 | 弗萨姆材料美国有限责任公司 | Photoresist cleaning compositions for use in photolithography and methods for treating substrates |
| CN108255027A (en) * | 2016-12-28 | 2018-07-06 | 安集微电子（上海）有限公司 | A kind of photoresist cleaning solution |
| CN108255027B (en) * | 2016-12-28 | 2024-04-12 | 安集微电子（上海）有限公司 | Photoresist cleaning liquid |
| CN110376854A (en) * | 2018-04-12 | 2019-10-25 | 弗萨姆材料美国有限责任公司 | Photoresist Stripper |
| JP2019185046A (en) * | 2018-04-12 | 2019-10-24 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | Photoresist stripper |
| EP3553811A1 (en) * | 2018-04-12 | 2019-10-16 | Versum Materials US, LLC | Photoresist stripper |
| IL265811B (en) * | 2018-04-12 | 2022-10-01 | Versum Mat Us Llc | Photoresist stripper |
| US11460778B2 (en) | 2018-04-12 | 2022-10-04 | Versum Materials Us, Llc | Photoresist stripper |
| IL265811B2 (en) * | 2018-04-12 | 2023-02-01 | Versum Mat Us Llc | A product that removes radiation-resistant material |
| CN110376854B (en) * | 2018-04-12 | 2023-06-23 | 弗萨姆材料美国有限责任公司 | Photoresist Stripper |
| WO2022232751A1 (en) | 2021-04-30 | 2022-11-03 | Versum Materials Us, Llc | Compositions for removing a photoresist from a substrate and uses thereof |
| EP4314951A4 (en) * | 2021-04-30 | 2025-03-19 | Versum Materials US, LLC | Compositions for removing a photoresist from a substrate and uses thereof |
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Application publication date: 20120704 |