CN102560429B - Metal organic vapor phase deposition device - Google Patents
Metal organic vapor phase deposition device Download PDFInfo
- Publication number
- CN102560429B CN102560429B CN201210065763.5A CN201210065763A CN102560429B CN 102560429 B CN102560429 B CN 102560429B CN 201210065763 A CN201210065763 A CN 201210065763A CN 102560429 B CN102560429 B CN 102560429B
- Authority
- CN
- China
- Prior art keywords
- gas
- metal organic
- diffuser
- pedestal
- vapor phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 96
- 239000002184 metal Substances 0.000 title claims abstract description 96
- 238000001947 vapour-phase growth Methods 0.000 title claims abstract description 40
- 239000007789 gas Substances 0.000 claims abstract description 169
- 230000002093 peripheral effect Effects 0.000 claims abstract description 73
- 238000006243 chemical reaction Methods 0.000 claims abstract description 67
- 150000004678 hydrides Chemical class 0.000 claims abstract description 44
- 239000012159 carrier gas Substances 0.000 claims abstract description 36
- 230000004907 flux Effects 0.000 claims abstract description 27
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 97
- 239000007921 spray Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 20
- 238000000151 deposition Methods 0.000 claims description 19
- 230000008021 deposition Effects 0.000 claims description 17
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- 238000009826 distribution Methods 0.000 claims description 6
- 239000012495 reaction gas Substances 0.000 claims description 6
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 238000005507 spraying Methods 0.000 abstract 3
- 239000010408 film Substances 0.000 description 49
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000010438 heat treatment Methods 0.000 description 11
- 238000000427 thin-film deposition Methods 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 239000000376 reactant Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 238000004080 punching Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000006185 dispersion Substances 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000011701 zinc Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 150000001447 alkali salts Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 235000006708 antioxidants Nutrition 0.000 description 1
- RBFQJDQYXXHULB-UHFFFAOYSA-N arsane Chemical compound [AsH3] RBFQJDQYXXHULB-UHFFFAOYSA-N 0.000 description 1
- 229910000070 arsenic hydride Inorganic materials 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000000112 cooling gas Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010667 large scale reaction Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 230000003245 working effect Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention relates to a metal organic vapor phase deposition device which comprises a reaction chamber, a base and a spraying component, wherein the base is arranged at the bottom of the reaction chamber; the spraying component is arranged at the top of the reaction chamber; the spraying component comprises a central air inlet device and a peripheral air inlet device encircling the central air inlet device; the central air inlet device is used for allocating a first gas at a first flux to an area between the central air inlet device and the base; the peripheral air inlet device is used for allocating a second gas at a second flux to a peripheral area of the reaction chamber; the first and second gases are carrier gas, III metallic organic source gas and V hydride source gas; the III metallic organic source gas and the V hydride source gas in the first and second gases respectively have a first flow ratio and a second flow ratio; and the first flow ratio is different from the second flow ratio. The metal organic vapor phase deposition device is used for increasing the uniformity and forming rate of a film.
Description
Technical field
The present invention relates to chemical vapour deposition technique field, particularly a kind of metal organic vapor phase deposition device.
Background technology
Chemical vapour deposition (Chemical vapor deposition, be called for short CVD) be that reactive material issues biochemical reaction in gaseous state condition, generate the solid matrix surface that solid matter is deposited on heating, and then making the Technology of solid material, it is achieved by chemical vapor deposition unit.Particularly, CVD device passes into reactant gases in reaction chamber by diffuser, and controls the reaction conditions such as pressure, temperature of reaction chamber, and reactant gases is reacted, thereby completes depositing operation step.In order to deposit required film, generally need in reaction chamber, pass into multiple different reactant gases, and also need to pass into other nonreactive gass such as carrier gas or sweeping gas in reaction chamber, therefore in CVD device, need to arrange multiple diffusers.
Metal organic chemical vapor deposition (Metal Organic Chemical Vapor Deposition, MOCVD) device is mainly used in the III-V families such as gan, gallium arsenide, indium phosphide, zinc oxide, the preparation of the thin layer monocrystalline functional structure material of II-VI compounds of group and alloy, along with the range of application of above-mentioned functions structured material constantly expands, MOCVD device has become one of important device of chemical vapor deposition unit.MOCVD is generally using II family or III family metal organic source and VI family or V family hydride source etc. as reactant gases, with hydrogen or nitrogen as carrier gas, on substrate, carry out vapor phase epitaxial growth in pyrolysis mode, thus the thin layer monocrystal material of grow various II-VI compound semiconductors, III-V compound semiconductor and their multivariate solid solution.Due to II family or III family metal organic source different with the transmission condition of VI family or V family hydride source, therefore need respectively II family or III family metal organic source and VI family or V family hydride source to be transferred to substrate top by different diffusers.
Metal organic chemical vapor deposition device of the prior art generally comprises:
Reaction chamber;
Be positioned at the spray assembly at described reaction chamber top, described spray assembly comprises two diffusers, and described two diffusers transfer to substrate top by II family or III family metal organic source and VI family or V family hydride source respectively;
With the pedestal that described spray assembly is oppositely arranged, described pedestal has heating unit, and described pedestal is for supporting and heated substrates.
Manyly please refer to about metal organic chemical vapor deposition device the United States Patent (USP) that publication number is US2009/0250004A1.
But the film being formed with existing metal organic chemical vapor deposition device exists inhomogeneous, and form the low problem of film speed.
Summary of the invention
The problem that the present invention solves is to provide a kind of metal organic vapor phase deposition device, improves the homogeneity of the film of described metal organic vapor phase deposition device formation, improves the formation speed of film simultaneously.
For addressing the above problem, the invention provides a kind of metal organic vapor phase deposition device, comprising:
A kind of metal organic vapor phase deposition device, is characterized in that, comprising:
For carrying out the reaction chamber of metal organic chemical vapor deposition (MOCVD);
The pedestal that is positioned at described reaction chamber bottom, described pedestal is treated deposition substrate for carrying;
Be positioned at the spray assembly at described reaction chamber top, described spray assembly is used for reaction gas distribution to described reaction chamber, described spray assembly comprises air feeding in center device and surrounds the peripheral diffuser of described air feeding in center device, wherein, described air feeding in center device is for being dispensed to the region between air feeding in center device and pedestal by the first gas with the first flux, described the first gas is III family metal organic source gas, V family hydride source gas and carrier gas, wherein, III family metal organic source gas and V family hydride source gas in described the first gas have first flow ratio, described peripheral diffuser is for being dispensed to the second gas the outer peripheral areas of described reaction chamber with the second flux, thereby weaken the thermal convection vortex that the first gas distributes, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, wherein, III family metal organic source gas and V family hydride source gas in described the second gas have the second throughput ratio, and described the second throughput ratio from first flow than different.
Optionally, the radius of described air feeding in center device is greater than pedestal radius 15～25mm.
Optionally, described air feeding in center device is 20～30mm to the distance of described pedestal.
Optionally, described the second flux is 2～10 times of the first flux.
Optionally, described the second throughput ratio is greater than 9 or be less than 1/9.
Optionally, the speed of rotation of described pedestal is 900RPM～1500RPM.
Optionally, described peripheral diffuser comprises the 3rd diffuser and refrigerating unit.
Optionally, described the 3rd diffuser comprises some sub-diffusers.
Optionally, described some sub-diffusers are respectively by III family metal organic source gas and carrier gas, and V family hydride source gas and carrier gas transfer to the outer peripheral areas of reaction chamber.
Optionally, described peripheral diffuser has peripheral inlet mouth, and described peripheral inlet mouth is positioned at the side contacting with reaction chamber.
Optionally, the quantity of described peripheral inlet mouth is 1～4.
Optionally, described III family metal organic source comprises one or more in Ga (CH3) 3, In (CH3) 3, Al (CH3) 3, Ga (C2H5) 3, Zn (C2H5) 3 gases.
Optionally, described V family hydride source comprises one or more in NH3, PH3, AsH3 gas.
Optionally, described carrier gas is one or both in nitrogen, hydrogen.
Optionally, described air feeding in center device comprises the first diffuser, the second diffuser and refrigerating unit.
Optionally, III family metal organic source gas and carrier gas are transferred to the region between air feeding in center device and pedestal by described the first diffuser, and described the first diffuser comprises the first inlet mouth.
Optionally, V family hydride source gas and carrier gas are transferred to the region between air feeding in center device and pedestal by described the second diffuser, and described the second diffuser comprises the second inlet mouth.
Compared with prior art, the present invention has the following advantages:
The embodiment of the present invention provides a kind of metal organic vapor phase deposition device, by surround peripheral diffuser outside air feeding in center device, and described peripheral diffuser is for the second gas is dispensed to the outer peripheral areas of described reaction chamber with the second flux, the thermal convection of outer peripheral areas that can inhibited reaction chamber; In order to improve the homogeneity of the film that pedestal center forms, need to improve the rotating speed of pedestal, but after pedestal rotating speed improves, the thermal convection of outer peripheral areas is even more serious, cause the homogeneity of the film that susceptor edges region forms to reduce; Therefore under the high-revolving state of pedestal, peripheral diffuser supplements to the outer peripheral areas of reaction chamber the thermal convection that the second gas can inhibited reaction chamber outer peripheral areas, and the uniformity coefficient of the film that susceptor edges region forms is improved; And then, make the pedestal of described metal organic vapor phase deposition device under high-revolving state, the film integral uniformity coefficient forming to fringe region from pedestal central zone improves.
Further, when the speed of rotation of pedestal is 900RPM～1500RPM, belong to high-speed state; The high rotating speed of pedestal can reduce the impact that the first gas divides timing thermal convection vortex, the uniformity of film that pedestal center forms is improved, thereby the film integral uniformity coefficient forming to fringe region from pedestal central zone under high-revolving state with described metal organic vapor phase deposition device improve; Meanwhile, the high rotating speed of pedestal also improves the formation speed of film simultaneously.
Further, described the second flux is 2～10 times of the first flux, make the second gas can be effectively support punching the first gas because the Convective Vortex impact of being heated is outer peripheral areas flowing upwards, thereby eliminate thermal convection vortex for film forming inhomogeneity impact.
Further, the radius of described air feeding in center device is greater than pedestal radius 15～25mm, make the position of the distribution of the second gas just support punching the first gas because the Convective Vortex impact of being heated is outer peripheral areas flowing upwards, thereby eliminate thermal convection vortex, improve film forming homogeneity.
Further, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, make the second gas can participate in reaction and form film, thus the ununiformity of modifying the film for the treatment of the formation of deposition substrate surface of susceptor edges.
Brief description of the drawings
Fig. 1 is the cross-sectional view of metal organic vapor phase deposition device of the present invention;
Fig. 2 is that the spray assembly of metal organic vapor phase deposition device of the present invention is along the plan structure schematic diagram in AA ' direction.
Embodiment
While carrying out thin film deposition processes with existing metal organic chemical vapor deposition device, the speed of rotation of pedestal cannot improve, and in being less than the low speed state of 500RPM, the formation speed of film is low, and the film forming in pedestal central zone is inhomogeneous.
Contriver finds after deliberation, cause pedestal under low speed state, the film forming in central zone is inhomogeneously caused by thermal convection vortex, described thermal convection vortex is due to the temperature head between spray assembly and pedestal, cause gas generation thermal convection to form vortex, reactant gases is fallen after rise to pedestal central zone from susceptor edges, thereby cause the inhomogeneous of film.
Existing metal organic chemical vapor deposition device, spray assembly requires different and different to the distance of pedestal according to concrete technology, in the time that processing requirement spray assembly is less than 20mm to the distance of pedestal, because described spray assembly is difficult at described spray assembly to the region generation thermal convection vortex between pedestal to the too small of pedestal, therefore the thin film deposition of pedestal central zone is even, pedestal can form film with the low speed state that is less than 500RPM, but, because rotating speed is low, the formation speed of film is also corresponding lower; In the time that spray assembly is greater than 20mm to the distance of pedestal, described spray assembly easily causes thermal convection vortex to the distance of pedestal, and reaction gas cognition falls after rise to pedestal central zone from susceptor edges region, thereby makes the thin film deposition of pedestal central zone inhomogeneous.
In order to improve the rotating speed of metal organic chemical vapor deposition device pedestal, thereby make formed film from pedestal center to edge entirety evenly, improve film forming speed simultaneously, the present inventor provides a kind of chemical vapor deposition unit, comprising:
For carrying out the reaction chamber of metal organic chemical vapor deposition (MOCVD);
The pedestal that is positioned at described reaction chamber bottom, described pedestal is treated deposition substrate for carrying;
Be positioned at the spray assembly at described reaction chamber top, described spray assembly is used for reaction gas distribution to described reaction chamber, described spray assembly comprises air feeding in center device and surrounds the peripheral diffuser of described air feeding in center device, wherein, described air feeding in center device is for being dispensed to the region between air feeding in center device and pedestal by the first gas with the first flux, described the first gas is III family metal organic source gas, V family hydride source gas and carrier gas, described peripheral diffuser is for being dispensed to the second gas the outer peripheral areas of described reaction chamber with the second flux, thereby weaken the thermal convection vortex that the first gas distributes, described the second gas is the one in carrier gas and III family metal organic source gas or V family hydride source gas.
The embodiment of the present invention provides a kind of metal organic vapor phase deposition device, by surround peripheral diffuser outside air feeding in center device, and described peripheral diffuser is for the second gas is dispensed to the outer peripheral areas of described reaction chamber with the second flux, the thermal convection of outer peripheral areas that can inhibited reaction chamber; In order to improve the homogeneity of the film that pedestal center forms, need to improve the rotating speed of pedestal, but after pedestal rotating speed improves, the thermal convection of outer peripheral areas is even more serious, cause the homogeneity of the film that susceptor edges region forms to reduce; Therefore under the high-revolving state of pedestal, peripheral diffuser supplements to the outer peripheral areas of reaction chamber the thermal convection that the second gas can inhibited reaction chamber outer peripheral areas, and the uniformity coefficient of the film that susceptor edges region forms is improved; And then, make the pedestal of described metal organic vapor phase deposition device under high-revolving state, the film integral uniformity coefficient forming to fringe region from pedestal central zone improves.On the other hand, the high rotating speed of pedestal can also make the formation speed of film improve.
Further, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, make the second gas can participate in reaction and form film, thus the ununiformity of modifying the film for the treatment of the formation of deposition substrate surface of susceptor edges.
Below with reference to specific embodiment, described metal organic vapor phase deposition device is elaborated, please refer to Fig. 1 and Fig. 2, wherein, Fig. 1 is the cross-sectional view of the present embodiment metal organic vapor phase deposition device, Fig. 2 is the spray assembly of metal organic vapor phase deposition device shown in Fig. 1 plan structure schematic diagram in AA ' direction, comprising:
For carrying out the reaction chamber 100 of metal organic chemical vapor deposition (MOCVD);
Be positioned at the pedestal 101 of described reaction chamber 100 bottoms, described pedestal 101 is treated deposition substrate 102 for carrying.
Be positioned at the spray assembly 103 at described reaction chamber 100 tops, described spray assembly 103 for by reaction gas distribution in described reaction chamber 100, described spray assembly 103 comprises air feeding in center device 110 and surrounds the peripheral diffuser 111 of described air feeding in center device 110, wherein, described air feeding in center device 110 is for being dispensed to the region between air feeding in center device 110 and pedestal 101 by the first gas with the first flux, described the first gas is III family metal organic source gas, V family hydride source gas and carrier gas, wherein, III family metal organic source gas and V family hydride source gas in described the first gas have first flow ratio, described peripheral diffuser is for being dispensed to the second gas the outer peripheral areas of described reaction chamber with the second flux, thereby weaken the thermal convection vortex that the first gas distributes, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, wherein, III family metal organic source gas and V family hydride source gas in described the second gas have the second throughput ratio, and described the second throughput ratio from first flow than different.
Particularly, described spray assembly 103 can be disc, rectangle and other those skilled in the art structure in common knowledge, therefore not to repeat here, in the present embodiment, institute's air feeding in center device 110 and pedestal 101 are disc, and described peripheral diffuser 111 is for surrounding the annular of air feeding in center device 110.
Described peripheral diffuser 111 comprises the 3rd diffuser 113 and peripheral inlet mouth 120, described the 3rd diffuser 113 is for being dispensed to the second gas the outer peripheral areas of described reaction chamber with the second flux, described peripheral inlet mouth 120 is positioned at the side contacting with reaction chamber 100, described peripheral inlet mouth 120 is one or more, enter the 3rd diffuser 113 for delivery of the second gas, the second gas can be dispersed in the 3rd diffuser 113.In the present embodiment, please refer to Fig. 1 and Fig. 2, described the 3rd diffuser 113 is single holistic air chamber, carrier gas, III family metal organic source gas and V family hydride source gas are transferred to the external zones that is configured to reaction chamber 100 after the 3rd diffuser 113, because the second throughput ratio is greater than 9 or be less than 1/9, therefore in the 3rd diffuser 113 with III family metal organic source gas or taking V family hydride source gas as main body, material that can economizer, simplified construction.
In another embodiment, described the 3rd diffuser 113 comprises some sub-diffusers, described some sub-diffusers transfer to III family metal organic source gas and carrier gas, V family hydride source gas and carrier gas respectively the outer peripheral areas of reaction chamber 100, can prevent that III family metal organic source gas and V family hydride source gas from reacting in the 3rd diffuser 113, stop up mouth spray, and cause waste.
The quantity of described peripheral inlet mouth 120 is preferably 1～4, and the second gas can be dispersed in the 3rd diffuser 113.
In the present embodiment, please refer to Fig. 1 and Fig. 2, in the time that the 3rd diffuser 113 is single holistic air chamber, III family metal organic source gas and V family hydride source gas pass through respectively independently air duct to be carried, then transmits into the 3rd diffuser 113 by 4 peripheral inlet mouths 120 by bypass line.
In another embodiment, in the time that the 3rd diffuser 113 comprises the first sub-diffuser and the second sub-diffuser, III family metal organic source gas and V family hydride source gas are respectively by independently air duct conveying, be transported to peripheral inlet mouth by bypass line again, the first sub-diffuser is entered in the metal organic source gas transmission of III family, the second sub-diffuser is entered in the hydride source gas transmission of V family, and described the first sub-diffuser and the second sub-diffuser comprise respectively 1～2 peripheral inlet mouth 120.
Described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, thereby the second gas can participate in the reaction that film forms, in liquidating and offsetting the first gas upwards flowing from pedestal 101 edges, that modifies pedestal 101 fringe regions treats the inhomogeneous of deposition substrate 102 surfaces.
The second throughput ratio of described the second gas is greater than 9 or be less than 1/9, makes in the second gas, taking III family metal organic source gas or V family hydride source gas as main body, to make the second gas can not make the reaction of the second gases affect to the first gas.
The first flow of described the first gas is than being determined by the concrete technology of metal organic chemical vapor deposition (MOCVD).
Please refer to Fig. 2, described air feeding in center device 110 comprises the first diffuser 130 and the second diffuser 131.
III family metal organic source gas and carrier gas are dispensed to the region between air feeding in center device 110 and pedestal 101 by described the first diffuser 130, described the second diffuser 131 is dispensed to V family hydride source gas and carrier gas the outer peripheral areas of described reaction chamber 100, described the first diffuser 130 and the separate isolation of the second diffuser 131; III family metal organic source gas and carrier gas, V family hydride source gas and carrier gas are delivered into respectively the first diffuser 130 and the second diffuser 131 by the first air duct 133 and the second air duct 134 respectively.
In the present embodiment, described the first diffuser 130 and the second diffuser 131 are respectively some sector structures, and space forms discoid; Described III family's metal organic source gas and carrier gas diffuse into each fan-shaped the first diffuser 130 by the dispersion device in the first diffuser 130 by described gas, and V family hydride source gas and carrier gas diffuse into each fan-shaped the second diffuser 131 by the dispersion device in the second diffuser 131 by described gas; In addition, those skilled in the art can adjust voluntarily according to actual processing requirement shape, structure and the position relationship of the first diffuser 130 and the second diffuser 131, should too not limit at this.
In the present embodiment, please refer to Fig. 2, the first diffuser 130 and the second diffuser 131 are respectively 2 groups of sector structures, and space forms discoidly, can make gas reaction more even, and the uniformity of film forming is improved.
Described in the present embodiment, air feeding in center device 110 is 20～40mm to the scope of the distance of described pedestal 101, as mentioned before, in the time that described air feeding in center device 110 is 20～40mm to the scope of the distance of described pedestal 101, easily cause that thermal convection vortex makes the thin film deposition for the treatment of deposition substrate 102 surfaces of pedestal 101 central zones inhomogeneous, need the rotating speed that improves pedestal 101 to being greater than 900RPM to eliminate the impact of thermal convection vortex, simultaneously, the homogeneity that the second gas that peripheral diffuser 111 configures can be modified the deposit film for the treatment of deposition substrate 102 surfaces of pedestal 101 fringe regions, make pedestal 101Zi center even to the film for the treatment of deposition substrate 102 surface formation of edge surface, therefore, in the time that center diffuser 110 is 20～40mm to the scope of the distance of described pedestal 101, the high rotating speed that can adopt the rotating speed of pedestal 101 to be greater than 900RPM carries out depositing operation, improves the inhomogeneity while of thin film deposition, improves the growth velocity of film.
Described in the present embodiment, the speed range of pedestal 101 is 900RPM～1500RPM, be preferably 900RPM～1200RPM, in the time that the rotating speed of pedestal 101 is greater than 900RPM, the inhomogeneous of thin film deposition for the treatment of deposition substrate 102 surfaces of pedestal 101 central zones that thermal convection vortex causes eliminated, and in the time that pedestal rotating speed is greater than 1000RPM, treat that the speed of the thin film deposition on deposition substrate 102 surfaces improves.
The radius of described air feeding in center device 110 is greater than pedestal 101 radius 15～25mm, in the time that the radius of center diffuser 110 is greater than pedestal 101 radius 15～25mm, the second gas that peripheral diffuser 111 distributes can liquidate and offset with the first gas, wherein, described the first gas is between air feeding in center device 110 and pedestal 101 fringe regions, thermal convection between acceptor center diffuser 110 and pedestal 101, and the high-revolving impact of pedestal 101 is upwards flowed from pedestal 101 edges.
Described the second flux is 2～10 times of the first flux, make the second gas offset the first gas upwards flowing from pedestal 101 edges by perfect hedge, and the film for the treatment of deposition substrate 102 surfaces of pedestal 101 fringe regions is modified, described the first flux is relevant with the radius of concrete metal organic chemical vapor deposition (MOCVD) technique and pedestal 101.
In the present embodiment, the material of described reaction chamber 100 is stainless steel.
Described pedestal 101 comprises supporting seat 104 and heating unit 105, and described supporting seat 104 is for supporting one or more deposition substrate 102 for the treatment of, described heating unit 105, below described supporting seat 104, is treated deposition substrate 102 for heating.
The material of described supporting seat 104 is graphite, preferably, can SiC layer be set at described graphite surface, makes supporting seat have the characteristics such as high temperature resistant, anti-oxidant and acidproof alkali salt and organic reagent, and physical and chemical performance is more stable.
Described heating unit 105 can be integrated in supporting seat 104, can be radio-frequency heater, infrared radiation heater or resistance heater etc., can carry out different selections according to the size of reaction chamber 100 and material.Adopt in the time of radio-frequency heater, supporting seat 104 is by radio-frequency coil by the induction heating that be coupled, and this heat form is often employing in large-scale reaction chamber 100, too complexity of still common system.For fear of the complicacy of system, in slightly little reaction chamber 100, conventionally adopt infrared radiation heater, the heat energy that halogen tungsten lamp produces is converted into infrared energy, and supporting seat absorbs this infrared energy and is transformed backheat energy.Adopt resistance heater, by the heating of resistance wire, and then realize the heating to supporting seat 104.
Described III family metal organic source gas comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3, Zn (C
2h
5)
3one or more in gas; Described V family hydride source gas comprises NH
3, PH
3, AsH
3one or more in gas; After described III family's metal organic source gas and V family hydride source gas decomposes, in reaction chamber, react, thereby treating that deposition substrate 102 surfaces form film.
Described carrier gas is one or more in nitrogen, hydrogen, rare gas element, and described carrier gas, for disperseing to participate in the gas of reaction, makes its configuration in reaction chamber 100 and reacts comparatively evenly and stablize.
Described air feeding in center device 110 and peripheral diffuser 111 all have mouth spray (not shown), be arranged at a side relative with pedestal 101, described mouth spray is for being dispensed to gas dispersion in reaction chamber 100, described mouth spray can be arbitrary shape known in those skilled in the art, such as some circular holes or some slotted eyes etc., therefore not to repeat here, and in the present embodiment, described mouth spray is some circular holes.
In described air feeding in center device 110 and peripheral diffuser 111, also comprise refrigerating unit 132, described refrigerating unit 132 is for cooling III family's metal organic source gas and V family hydride source gas, make described gas reach decomposition temperature, described refrigerating unit 132 overlaps with described the first diffuser 130, the second diffuser 131 and the 3rd diffuser 113; Described refrigerating unit 132 has cooling channel, in order to pass into cooling gas or cooling liqs.Particularly, described refrigerating unit 132 can adopt cooling by water, also can adopt air-cooled coolingly, and its corresponding concrete structure is known for those skilled in the art, therefore do not repeat them here.In addition, refrigerating unit 132 also can make to spray assembly in lower temperature, has extended the work-ing life of spray assembly.
Described metal organic vapor phase deposition device also comprises: the proofing unit (not shown) being made up of temperature sensor and baroceptor; It connects respectively the control device (not shown) of each temperature sensor and baroceptor.
Described baroceptor can be one, be arranged on the region between described air feeding in center device 110 and pedestal 101, the current air pressure in the region between the air feeding in center device 110 detecting and pedestal 101 is sent to control device, control device analysis obtains current air pressure and thin film deposition and reacts the poor of required air pressure, and then control device realizes the air pressure adjustment to reaction chamber 100, react required air pressure until make the current air pressure in the region between air feeding in center device 110 and pedestal 101 equal thin film deposition.
Described temperature sensor can be multiple, can be at the first diffuser 130, the second diffuser 131, peripheral diffuser 111, a temperature sensor is set respectively on refrigerating unit 132 and heating unit 105, be respectively used to detect the Current Temperatures of the first diffuser 130, the Current Temperatures of the second diffuser 131, the Current Temperatures of peripheral diffuser 111, the Current Temperatures of the Current Temperatures of refrigerating unit 132 and heating unit 105, and the said temperature that detection is obtained sends to control device, control device regulates each unit temp to temperature required by analysis, thereby can control more accurately the process of thin film deposition.
Described metal organic vapor phase deposition device also comprises extraction valve 106, for remaining interior reaction chamber 100 reaction gas is discharged.
In sum, the embodiment of the present invention provides a kind of metal organic vapor phase deposition device, by surround peripheral diffuser outside air feeding in center device, and described peripheral diffuser is for the second gas is dispensed to the outer peripheral areas of described reaction chamber with the second flux, the thermal convection of outer peripheral areas that can inhibited reaction chamber; In order to improve the homogeneity of the film that pedestal center forms, need to improve the rotating speed of pedestal, but after pedestal rotating speed improves, the thermal convection of outer peripheral areas is even more serious, cause the homogeneity of the film that susceptor edges region forms to reduce; Therefore under the high-revolving state of pedestal, peripheral diffuser supplements to the outer peripheral areas of reaction chamber the thermal convection that the second gas can inhibited reaction chamber outer peripheral areas, and the uniformity coefficient of the film that susceptor edges region forms is improved; And then, make the pedestal of described metal organic vapor phase deposition device under high-revolving state, the film integral uniformity coefficient forming to fringe region from pedestal central zone improves.
Further, when the speed of rotation of pedestal is 900RPM～1500RPM, belong to high-speed state; The high rotating speed of pedestal can reduce the impact that the first gas divides timing thermal convection vortex, the uniformity of film that pedestal center forms is improved, thereby the film integral uniformity coefficient forming to fringe region from pedestal central zone under high-revolving state with described metal organic vapor phase deposition device improve; Meanwhile, the high rotating speed of pedestal also improves the formation speed of film simultaneously.
Further, described the second flux is 2～10 times of the first flux, make the second gas can be effectively support punching the first gas because the Convective Vortex impact of being heated is outer peripheral areas flowing upwards, thereby eliminate thermal convection vortex for film forming inhomogeneity impact.
Further, the radius of described air feeding in center device is greater than pedestal radius, make the position of the distribution of the second gas just support punching the first gas because the Convective Vortex impact of being heated is outer peripheral areas flowing upwards, thereby eliminate thermal convection vortex, improve film forming homogeneity.
Further, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, make the second gas can participate in reaction and form film, thus the ununiformity of modifying the film for the treatment of the formation of deposition substrate surface of susceptor edges.
Though the embodiment of the present invention is described above, the present invention is not defined in this.Any those skilled in the art, without departing from the spirit and scope of the present invention, all can make various changes or modifications, and therefore protection scope of the present invention should be as the criterion with claim limited range.
Claims (16)
1. a metal organic vapor phase deposition device, is characterized in that, comprising:
For carrying out the reaction chamber of metal organic chemical vapor deposition (MOCVD);
The pedestal that is positioned at described reaction chamber bottom, described pedestal is treated deposition substrate for carrying;
Be positioned at the spray assembly at described reaction chamber top, described spray assembly is used for reaction gas distribution to described reaction chamber, described spray assembly comprises air feeding in center device and surrounds the peripheral diffuser of described air feeding in center device, wherein, described air feeding in center device is for being dispensed to the region between air feeding in center device and pedestal by the first gas with the first flux, described the first gas is III family metal organic source gas, V family hydride source gas and carrier gas, wherein, III family metal organic source gas and V family hydride source gas in described the first gas have first flow ratio, described peripheral diffuser is for being dispensed to the second gas the outer peripheral areas of described reaction chamber with the second flux, described the second flux is 2～10 times of the first flux, with second flux distribute the second gas can liquidate offset with first flux distribute the first gas from susceptor edges upwards flow, thereby weaken the thermal convection vortex that the first gas distributes, described the second gas is carrier gas, III family metal organic source gas and V family hydride source gas, wherein, III family metal organic source gas and V family hydride source gas in described the second gas have the second throughput ratio, and described the second throughput ratio from first flow than different.
2. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, the radius of described air feeding in center device is greater than pedestal radius 15～25mm.
3. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, described air feeding in center device is 20～30mm to the distance of described pedestal.
4. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, described the second throughput ratio is greater than 9 or be less than 1/9.
5. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, the speed of rotation of described pedestal is 900RPM～1500RPM.
6. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, described peripheral diffuser comprises the 3rd diffuser and refrigerating unit.
7. metal organic vapor phase deposition device as claimed in claim 6, is characterized in that, described the 3rd diffuser comprises some sub-diffusers.
8. metal organic vapor phase deposition device as claimed in claim 7, is characterized in that, described some sub-diffusers are respectively by III family metal organic source gas and carrier gas, and V family hydride source gas and carrier gas transfer to the outer peripheral areas of reaction chamber.
9. metal organic vapor phase deposition device as claimed in claim 1, is characterized in that, described peripheral diffuser has peripheral inlet mouth, and described peripheral inlet mouth is positioned at the side contacting with reaction chamber.
10. metal organic vapor phase deposition device as claimed in claim 9, is characterized in that, the quantity of described peripheral inlet mouth is 1～4.
11. metal organic vapor phase deposition devices as claimed in claim 1, is characterized in that, described III family metal organic source comprises Ga (CH
3)
3, In (CH
3)
3, Al (CH
3)
3, Ga (C
2h
5)
3, Zn (C
2h
5)
3one or more in gas.
12. metal organic vapor phase deposition devices as claimed in claim 1, is characterized in that, described V family hydride source comprises NH
3, PH
3, AsH
3one or more in gas.
13. metal organic vapor phase deposition devices as claimed in claim 1, is characterized in that, described carrier gas is one or both in nitrogen, hydrogen.
14. metal organic vapor phase deposition devices as claimed in claim 1, is characterized in that, described air feeding in center device comprises the first diffuser, the second diffuser and refrigerating unit.
15. metal organic vapor phase deposition devices as claimed in claim 14, it is characterized in that, III family metal organic source gas and carrier gas are transferred to the region between air feeding in center device and pedestal by described the first diffuser, and described the first diffuser comprises the first inlet mouth.
16. metal organic vapor phase deposition devices as claimed in claim 14, is characterized in that, V family hydride source gas and carrier gas are transferred to the region between air feeding in center device and pedestal by described the second diffuser, and described the second diffuser comprises the second inlet mouth.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210065763.5A CN102560429B (en) | 2012-03-13 | 2012-03-13 | Metal organic vapor phase deposition device |
| TW101144510A TW201337032A (en) | 2012-03-13 | 2012-11-28 | Metal organic vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210065763.5A CN102560429B (en) | 2012-03-13 | 2012-03-13 | Metal organic vapor phase deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102560429A CN102560429A (en) | 2012-07-11 |
| CN102560429B true CN102560429B (en) | 2014-12-03 |
Family
ID=46406995
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210065763.5A Active CN102560429B (en) | 2012-03-13 | 2012-03-13 | Metal organic vapor phase deposition device |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102560429B (en) |
| TW (1) | TW201337032A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102766854B (en) * | 2012-08-16 | 2013-06-05 | 江苏汉莱科技有限公司 | Novel system for metal-organic chemical vapor deposition (MOCVD) |
| CN105200395B (en) * | 2014-06-18 | 2017-11-03 | 中微半导体设备(上海)有限公司 | Air inlet and cooling device for MOCVD device |
| CN104911563A (en) * | 2015-06-29 | 2015-09-16 | 聚灿光电科技股份有限公司 | CVD (chemical vapor deposition) device and CVD device protective layer formation method |
| KR101723923B1 (en) * | 2015-11-11 | 2017-04-11 | 참엔지니어링(주) | Deposition apparatus |
| CN107502872B (en) * | 2017-08-24 | 2019-08-16 | 新乡市巨能合成材料有限公司 | A kind of metal organic chemical vapor deposition reactor spray equipment |
| CN114774887A (en) * | 2022-06-22 | 2022-07-22 | 拓荆科技(北京)有限公司 | Gas delivery device, method and semiconductor deposition equipment |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101560650A (en) * | 2009-05-15 | 2009-10-21 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| CN101924015A (en) * | 2009-06-12 | 2010-12-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas input device and semiconductor processing device |
| CN101985746A (en) * | 2009-07-28 | 2011-03-16 | 丽佳达普株式会社 | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU2002241496A1 (en) * | 2000-11-20 | 2002-06-18 | Applied Epi, Inc. | Surface sealing showerhead for vapor deposition reactor having integrated flow diverters |
| US7976631B2 (en) * | 2007-10-16 | 2011-07-12 | Applied Materials, Inc. | Multi-gas straight channel showerhead |
| CN102181923B (en) * | 2011-04-28 | 2012-07-18 | 浙江昀丰新能源科技有限公司 | Vapor phase epitaxy device and vapor phase epitaxy method |
-
2012
- 2012-03-13 CN CN201210065763.5A patent/CN102560429B/en active Active
- 2012-11-28 TW TW101144510A patent/TW201337032A/en unknown
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101560650A (en) * | 2009-05-15 | 2009-10-21 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| CN101924015A (en) * | 2009-06-12 | 2010-12-22 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Gas input device and semiconductor processing device |
| CN101985746A (en) * | 2009-07-28 | 2011-03-16 | 丽佳达普株式会社 | Chemical vapor deposition apparatus capable of controlling discharging fluid flow path in reaction chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201337032A (en) | 2013-09-16 |
| TWI494462B (en) | 2015-08-01 |
| CN102560429A (en) | 2012-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102560429B (en) | Metal organic vapor phase deposition device | |
| KR101579217B1 (en) | Apparatus for delivering precursor gases to an epitaxial growth substrate | |
| US8591993B2 (en) | Epitaxial wafer manufacturing apparatus and manufacturing method | |
| TWI503867B (en) | Cvd method and cvd reactor | |
| US20180171479A1 (en) | Materials and coatings for a showerhead in a processing system | |
| CN101328579B (en) | HVPE nozzle design | |
| CN103456593B (en) | A kind of hydride vapor phase epitaxy apparatus and method improving multiple-piece epitaxial material thickness distributing homogeneity | |
| US7396415B2 (en) | Apparatus and methods for isolating chemical vapor reactions at a substrate surface | |
| CN102465333B (en) | Vertical hydride vapor phase epitaxy growth system | |
| CN104164704A (en) | High throughput multi-wafer epitaxial reactor | |
| TW200924854A (en) | Multi-gas spiral channel showerhead | |
| US10760161B2 (en) | Inject insert for EPI chamber | |
| CN103103501B (en) | A kind of material vapour phase epitaxy Fan spray head structure | |
| CN103014667B (en) | Chemical vapor deposition (CVD) device | |
| US20120227667A1 (en) | Substrate carrier with multiple emissivity coefficients for thin film processing | |
| CN103305906A (en) | Reaction chamber of epitaxial deposition nitriding III-group or nitriding II--group material | |
| CN105648425B (en) | A kind of chemical vapor deposition unit and its temperature control method | |
| CN104141116A (en) | Metal organic chemical vapor deposition device, gas spray component and gas distribution control method | |
| US20130068320A1 (en) | Protective material for gas delivery in a processing system | |
| CN103014669A (en) | Chemical vapor deposition (CVD) device | |
| TWI490367B (en) | Mocvd (metal organic chemical vapor deposition) method and apparatus thereof | |
| CN103014668B (en) | Chemical vapor deposition (CVD) device | |
| CN103014666B (en) | Chemical vapor deposition (CVD) device | |
| JP2018037456A (en) | Vapor growth method | |
| CN103014664B (en) | Chemical vapor deposition apparatus |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| EE01 | Entry into force of recordation of patent licensing contract | ||
| EE01 | Entry into force of recordation of patent licensing contract |
Application publication date: 20120711 Assignee: Nanchang Medium and Micro Semiconductor Equipment Co., Ltd. Assignor: Advanced Micro-Fabrication Equipment (Shanghai) Inc. Contract record no.: 2018990000345 Denomination of invention: Metal organic vapor phase deposition device Granted publication date: 20141203 License type: Exclusive License Record date: 20181217 |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |