CN102592986B - Method for forming - Google Patents
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- CN102592986B CN102592986B CN201210063066.6A CN201210063066A CN102592986B CN 102592986 B CN102592986 B CN 102592986B CN 201210063066 A CN201210063066 A CN 201210063066A CN 102592986 B CN102592986 B CN 102592986B
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- 238000000034 method Methods 0.000 title claims abstract description 78
- 238000005530 etching Methods 0.000 claims abstract description 96
- 239000010410 layer Substances 0.000 claims description 45
- 239000011229 interlayer Substances 0.000 claims description 13
- 239000006227 byproduct Substances 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 230000007423 decrease Effects 0.000 claims description 5
- 230000008021 deposition Effects 0.000 claims description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical group CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims description 2
- 229920000642 polymer Polymers 0.000 abstract description 10
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 10
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 229910003978 SiClx Inorganic materials 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 230000036962 time dependent Effects 0.000 description 2
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- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000006116 polymerization reaction Methods 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of method for forming, enter Mobile state adjustment in via etch process to electrode temperature above and/or under etching apparatus, the yield of polymer in etching process can be adjusted, expand the live width of via bottoms, obtain more vertical pattern, increase process window, it is to avoid etching stopping phenomenon, keeps stablizing for electrical property.In the process, using electrode temperature as new technological parameter, it is only necessary to make local directed complete set to process menu, do not increase new technological process, production capacity and production cost will not be caused to significantly affect.
Description
Technical field
A kind of the present invention relates to ic manufacturing technology field, more particularly to method for forming.
Background technology
As integrated circuit develops to deep sub-micron dimensions, the complexity of the dense degree and technique of device constantly increases
Plus, even more important is become to the strict control of technical process.Wherein, through hole is interconnected as multiple layer metal interlayer and device is active
The passage connected between area and external circuitry, as which has important function in device architecture composition so that the formation of through hole
Technique is always paid attention to by those skilled in the art.
In the chamber of the conventional etching apparatus for being presently used for through hole manufacture, critical piece has upper and lower electrode, chamber wall, enters
QI KOU etc., wherein upper and lower electrode adopt cooling water cooling with the constant of keeping temperature.Electrode structure and ginseng due to etching apparatus
Several formation process to through hole have considerable influence, and industry is to this existing many research, but focuses primarily upon equipment aspect, such as electrode
Shape, position etc., for example, the United States Patent (USP) of Patent No. US7728252 proposes one kind and introduces a floating in the vacuum chamber
Electrode, and the high selectivity anisotropic etching to deeper structure is thereby realized, but the method needs to change apparatus cavity
Make, also complex on technological parameter is arranged, and the technology field being suitable for is also relatively simple.
Accordingly, it would be desirable to a kind of mutually can be connected with existing etching apparatus technique, simpler, stable, result is controllable, it is real to be easy to
Existing method for forming.
Content of the invention
It is an object of the invention to provide a kind of method for forming, is obtained in that preferable pattern, it is to avoid etching stopping is existing
As, and keep stablizing for electrical property.
For solving the above problems, the present invention provides a kind of method for forming, including：
Film layer structure is formed on a substrate；
Photoetching, etching technics are carried out to the film layer structure, to form the patterned structures with through hole；
Wherein, in etching process, dynamic adjusts electrode temperature above and/or under etching apparatus.
Optionally, described dynamic adjustment in, the bottom electrode temperature of etching apparatus is increased, upper electrode temperature holding constant or
Decline.
Optionally, in the dynamic adjustment, the bottom electrode temperature of etching apparatus is made to keep constant, upper electrode temperature declines.
Optionally, in the dynamic adjustment, described above and/or under the time dependent curve of electrode temperature for non-linear or
Linearly.
Optionally, the film layer structure is followed successively by etching stop layer, interlayer dielectric layer, antireflection dielectric layer from the bottom to top,
Etching stop layer described in the via bottoms expose portion.
Optionally, the interlayer dielectric layer is TEOS and/or FSG.
Optionally, it is divided into two step of main etching and over etching to the etching that the film layer structure is carried out.
Optionally, the bottom electrode temperature keeps lower temperature constant in main etch step, protects in over etching step
Hold constant in higher temperature, the lower temperature be 15～25 DEG C, the higher temperature be 35～50 DEG C.
Optionally, the upper electrode temperature keeps higher temperature constant in main etch step, protects in over etching step
Hold constant in lower temperature, the lower temperature be 35～50 DEG C, the higher temperature be 65～75 DEG C.
Optionally, the bottom electrode temperature non-linear or linear rise in the etching process to the film layer structure, rises
Beginning temperature is 15～25 DEG C, and final temperature is 35～50 DEG C.
Optionally, the upper electrode temperature non-linear or linear decline in the etching process to the film layer structure, rises
Beginning temperature is 65～75 DEG C, and final temperature is 35～50 DEG C.
Compared with prior art, the method for forming that the present invention is provided, to etching apparatus in via etch process
Above and/or under electrode temperature enter Mobile state adjustment, can adjust the yield of polymer in etching process, expand via bottoms
Live width, obtains more vertical pattern, increases process window, it is to avoid etching stopping phenomenon, keeps stablizing for electrical property.Here mistake
Cheng Zhong, using electrode temperature as new technological parameter, it is only necessary to make local directed complete set to process menu, does not increase new technique stream
Journey, will not cause to significantly affect to production capacity and production cost.
Description of the drawings
Fig. 1 is the film layer structure generalized section for forming through hole of the embodiment of the present invention one；
Fig. 2 is that the bottom electrode temperature of the embodiment of the present invention one changes over curve chart；
Fig. 3 is the through-hole structure generalized section of one gained of the embodiment of the present invention；
Fig. 4 is that the bottom electrode temperature of the embodiment of the present invention two changes over curve chart.
Specific embodiment
The method for forming that the present invention is provided is applied to through hole formation process of the characteristic size (CD) for 130nm, also can
Be applied to characteristic size (CD) for 90nm, 65nm associated through-holes technique, for other characteristic sizes (CD) 100～200nm,
Depth can be also suitable in 0.9～2 μm of through hole formation process.In addition the realization of the present invention needs certain hardware (as etching sets
Standby) and corresponding function support.
The core concept of the method for forming that the present invention is provided is, to the upper of etching apparatus in via etch process
And/or bottom electrode temperature enters Mobile state adjustment, adjusts the yield of byproduct of reaction (being mainly some polymer) with this, to
Obtain the preferable pattern of through hole.
Method for forming proposed by the present invention is described in further detail below in conjunction with the drawings and specific embodiments.
Embodiment one
The method for forming of the present embodiment includes procedure below：
First, as shown in figure 1, being formed sediment by plasma-enhanced chemical vapor deposition (PECVD) or low pressure chemical phase
The common process such as product (LPCVD) form one layer of etching stop layer 110 on the substrate 100, and the etching stop layer 110 can be nitrogen
SiClx (Si3N4), monofilm or the composite membrane such as NDC, thickness isIn this enforcement, etching stop layer 110 is nitrogen
SiClx, thickness isPlasma-enhanced chemical vapor deposition (PECVD), low-pressure chemical vapor phase deposition (LPCVD) etc.
The technology that technique is well known to those skilled in the art, will not be described here.
Then, please continue to refer to Fig. 1, by plasma-enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually the common process such as deposit (LPCVD) forms interlayer dielectric layer 200, the interlayer dielectric layer 200 on etching stop layer 110
Can be monofilm or the composite membranes (the alternate mode of multilayer film can be adopted) such as TEOS, FSG, thickness isThis
In enforcement, interlayer dielectric layer 200 is FSG, and thickness isIts forming method is low-pressure chemical vapor phase deposition (LPCVD)
Technique.
Then, please continue to refer to Fig. 1, by plasma-enhanced chemical vapor deposition (PECVD) or low pressure chemical gas
Mutually the common process such as deposit (LPCVD) forms one layer of antireflection dielectric layer (DARC) 210, this enforcement on interlayer dielectric layer 200
In, antireflection dielectric layer (DARC) 210 is SiON, and forming method is plasma-enhanced chemical vapor deposition (PECVD), thick
Spend and beSo far, film layer structure is formed, is made up of three-decker, as shown in figure 1, being followed successively by etch-stop from the bottom to top
Only layer 110, interlayer dielectric layer 200, antireflection dielectric layer 210.
Then, the antireflection dielectric layer (DARC) 210 and interlayer dielectric layer 200 of film layer structure are carried out photoetching, etching with
Realize graphically, i.e., through-hole structure is formed in antireflection dielectric layer (DARC) 210 and interlayer dielectric layer 200, in etching process
Need to enter electrode temperature above and/or under etching apparatus Mobile state adjustment.For the deeper through-hole structure of depth (1.2 μ of ＞
M), the accumulation in etching process with byproduct of reaction (being mainly some polymer) in through hole, causes the feature chi of through hole
Very little (i.e. aperture) increases with depth and tends to reducing, i.e., form reverse trapezoid shape (taper) on vertical cross-section.In some situations
Under, after etching reaches certain depth, the accumulation of byproduct of reaction be enough to the continuation for preventing etching process, etching stopping occurs existing
As (etchstop).The change of through hole pattern or etching stopping phenomenon all can cause obvious shadow to the electric conductivity of through hole
Ring, cause conduction resistance Rc to increase, or even open circuit.In the present embodiment to etching apparatus upper in conventional through holes etching technics and/
Or bottom electrode temperature enters Mobile state adjustment, to form preferable through hole pattern, and obtains good electrical property.
In conventional via etch process, it is broadly divided into main etching and crosses the step of etched membrane layer structure forms through hole and carve
Lose two steps.In the over etching stage, etch rate is very fast, but for keeping the through hole pattern for being formed, which forms byproduct of reaction (polymerization
Thing) amount also more；And in the over etching stage, due to the byproduct of reaction (polymer) that there is early stage accumulation, for preventing from etching
Stop phenomenon, the amount of its byproduct of reaction is less.
In the present embodiment, main etching menu major parameter is：Process pressure is 40mtorr；Rf frequency is
13.56MHz, its power are 1600W；C4F6Flow is 20～30sccm, preferably 25sccm；Oxygen O2Flow be 16～
20sccm, preferably 18sccm；CH2F2Flow is 6～10sccm, preferably 8sccm；Argon Ar flow is 450～550sccm,
Preferably 500sccm；Process time is 90sec；Over etching menu major parameter is：Process pressure is 45mtorr；Rf frequency
For 13.56MHz, its power is 1400W；C4F6Flow is 20～30sccm, preferably 23sccm；Oxygen O2Flow be 16～
20sccm, preferably 19sccm；Argon Ar flow is 450～550sccm, preferably 500sccm；Process time is 75sec.Its
Middle C4F6、CH2F2The source of etching agent F ion, CH are all provided2F2Polymer deposition is formed simultaneously in through-hole side wall, side wall is affected
Slope, pattern and flatness, O2Here also adjusts the forming amount of polymer.
In conventional etching menu, the temperature of the upper and lower electrode of etching apparatus is typically set to definite value, to avoid causing technique
Affect, the such as standing temperature of certain model etching machine bench bottom electrode is 20 DEG C, the standing temperature of Top electrode is 70 DEG C, and its fluctuation range is only
1～2 DEG C, it is held essentially constant.In fact, the formation of polymer and deposition process are closely related with the temperature of upper and lower electrode, lead to
Hole side wall and surface temperature are higher, and polymer is more difficult to be deposited on through-hole side wall and surface.This is based on, the present invention passes through in etching
The temperature of the different phase control upper/lower electrode of process is adjusting the yield of polymer, and then obtains preferable through hole especially
Bottom pattern, it is to avoid etching stopping phenomenon.
In the present embodiment, it is as shown in Figure 2 that the temperature of bottom electrode changes over curve.In main etch step, bottom electrode
Temperature is maintained at a relatively lower temp, and optional scope is 15～25 DEG C, preferably 20 DEG C, and under over etching step, raising
To a comparative high temperature, optional scope is 35～50 DEG C, preferably 40 DEG C to electrode temperature.Due to two step bottom electrode temperature not
With, needing to heat up bottom electrode between main etch step and over etching step, the time is set to 20sec, simultaneously during this period of time
Each reaction gas flow can be stablized.As during over etching step, bottom electrode heats up, in the end portion of through hole, byproduct of reaction sinks
Product is less, is more beneficial for the expansion of bottom live width, reduces the live width difference of via top and bottom, keeps more vertical through hole shape
Looks, as shown in Figure 3.
Embodiment two
The present embodiment is with the difference of embodiment one, in whole etching process as shown in Figure 1 (i.e. to DARC 210
Etching process with interlayer dielectric layer 200) in, dynamic adjustment, i.e., progressive intensification (ramp), bottom electrode is carried out to bottom electrode temperature
It is as shown in Figure 4 that temperature changes over curve.Main etching and over etching are integrated into an etching process, in the etching starting stage
(equivalent to former main etch step), heats up relatively slow, in etching process later stage (equivalent to former over etching step), heats up very fast, i.e.,
In whole process, slope becomes larger.In the present embodiment, 15～25 DEG C of the optional scope of initial temperature, terminates by preferably 20 DEG C
35～50 DEG C of the optional scope of temperature, can also obtain the through hole pattern similar to embodiment one by preferably 40 DEG C.
Additionally, in other embodiments of the present invention, in addition to bottom electrode temperature scalable, Top electrode temperature can also be adjusted simultaneously
Degree, it is also possible to fix an electrode temperature (lower or upper electrode temperature) and only adjust another electrode temperature (up or down electrode temperature), with
Adjust the deposition of through hole interpolymer.That is, in the dynamic adjustment, the bottom electrode temperature of etching apparatus is increased,
Upper electrode temperature keeps constant or declines；Or, in the dynamic adjustment, make the bottom electrode temperature of etching apparatus keep constant,
Upper electrode temperature declines.In the dynamic adjustment, described above and/or under the time dependent curve of electrode temperature for non-linear or
Linearly.It should be noted that with the trend of bottom electrode temperature conversely, upper electrode temperature is higher, the deposition of through hole interpolymer
More；Upper electrode temperature is lower, and the deposition of through hole interpolymer is fewer.
It is non-linear that upper electrode temperature changes over the embodiment two that curve can be as shown in Figure 4, can also make linear change
Change, it is also possible to two kinds of temperature of main etching and over etching as described in embodiment one.For example, upper electrode temperature is from initial temperature, optional
Scope is 65～75 DEG C, preferably 70 DEG C, linearly or nonlinearly fades to final temperature, and optional scope is 35～50 DEG C, preferably
For 40 DEG C, or be maintained at a comparative high temperature in main etch step, optional scope be 65～75 DEG C, preferably 70 DEG C,
A relatively lower temp is maintained in over etching step, and optional scope is 35～50 DEG C, preferably 40 DEG C.Upper electricity is adjusted simultaneously
The function that upper electrode temperature is bottom electrode temperature can also be set when pole temperature and bottom electrode temperature, with the rising of bottom electrode temperature
And reduce.In a word, by the trend of regulation temperature change, vertically oriented aperture there-through live width can be affected, obtains desired through hole
Pattern.
It is pointed out that the change of the up or down electrode temperature of etching apparatus can produce certain impact to etch rate,
Therefore the time for etching needs according to circumstances to adjust in good time, and therefore not to repeat here.
In sum, the method for forming that the present invention is provided, in via etch process to the upper of etching apparatus and/or
Bottom electrode temperature enters Mobile state adjustment, can adjust the yield of polymer in etching process, expands the live width of via bottoms, obtains
More vertical pattern is obtained, increases process window, it is to avoid etching stopping phenomenon, keep stablizing for electrical property.In the process, will
Above and/or under etching apparatus, electrode temperature is used as new technological parameter, it is only necessary to make local directed complete set to process menu, does not increase
New technological process, will not cause to significantly affect to production capacity and production cost.
Although the present invention is disclosed as above with preferred embodiment, which is not intended to limit the scope of the present invention.Any
Art personnel without departing from the spirit and scope of the present invention, make to technical scheme well know in the art
Equivalent change or replace without departing from the present invention exposure and protection domain.
Claims (9)
1. a kind of method for forming, it is characterised in that include：
Film layer structure is formed on a substrate；
Photoetching, etching technics are carried out to the film layer structure, to form the patterned structures with through hole；
Wherein, in the etching process, dynamic adjusts electrode temperature above and/or under etching apparatus；Wherein, institute is adjusted
The rising for stating bottom electrode temperature is non-linear or linear over time, and Top electrode keeps constant or declines；Or adjustment
The decline of the upper electrode temperature is non-linear or linear over time, and bottom electrode keeps constant, so that etching work
In the through hole of skill starting stage, byproduct of reaction deposition increases, and makes byproduct of reaction in the through hole in etching technics later stage sink
Accumulated amount is reduced.
2. method for forming as claimed in claim 1, it is characterised in that the etching technics includes main etch step and mistake
Etch step, in the dynamic adjustment, makes in the bottom electrode temperature of etching apparatus between main etch step and over etching step
Rise, the bottom electrode temperature of over etching step is higher than the bottom electrode temperature of main etch step, and upper electrode temperature holding is constant or declines.
3. method for forming as claimed in claim 2, it is characterised in that the bottom electrode temperature is protected in main etch step
Hold lower temperature constant, it is constant to be maintained at higher temperature in over etching step, the lower temperature is 15～25 DEG C, described compared with
High-temperature is 35～50 DEG C.
4. method for forming as claimed in claim 2, it is characterised in that the bottom electrode temperature is to the film layer structure
Etching process in non-linear or linear rise, initial temperature be 15～25 DEG C, final temperature be 35～50 DEG C.
5. method for forming as claimed in claim 1, it is characterised in that the etching technics include main etch step and
Over etching step, in the dynamic adjustment, makes the upper electrode temperature of etching apparatus between main etch step and over etching step
Decline, the upper electrode temperature of over etching step makes the bottom electrode temperature of etching apparatus less than the upper electrode temperature of main etch step
Keep constant.
6. method for forming as claimed in claim 5, it is characterised in that the upper electrode temperature is protected in main etch step
Hold higher temperature constant, it is constant to be maintained at lower temperature in over etching step, the lower temperature is 35～50 DEG C, described compared with
High-temperature is 65～75 DEG C.
7. method for forming as claimed in claim 5, it is characterised in that the upper electrode temperature is to the film layer structure
Etching process in non-linear or linear decline, initial temperature be 65～75 DEG C, final temperature be 35～50 DEG C.
8. method for forming as claimed in claim 1, it is characterised in that the film layer structure is followed successively by etching from the bottom to top
Stop-layer, interlayer dielectric layer, antireflection dielectric layer, etching stop layer described in the via bottoms expose portion.
9. method for forming as claimed in claim 8, it is characterised in that the interlayer dielectric layer is TEOS and/or FSG.
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| CN201210063066.6A CN102592986B (en) | 2012-03-09 | 2012-03-09 | Method for forming |
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| CN201210063066.6A CN102592986B (en) | 2012-03-09 | 2012-03-09 | Method for forming |
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| CN104425237B (en) * | 2013-08-20 | 2018-05-08 | 北京北方华创微电子装备有限公司 | Substrate lithographic method |
| CN105655283A (en) * | 2014-11-13 | 2016-06-08 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Isolation etching method for shallow trench with high depth-to-width ratio |
| CN113808966B (en) * | 2020-06-16 | 2023-10-17 | 长鑫存储技术有限公司 | Debugging method of semiconductor equipment and preparation method of semiconductor device |
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| CN1950545A (en) * | 2004-04-30 | 2007-04-18 | 兰姆研究公司 | Apparatus including showerhead electrode and heater for plasma processing |
| CN102315115A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | Dry etching method for HfSiAlON high-K dielectric |
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| JP4336124B2 (en) * | 2003-03-10 | 2009-09-30 | 東京エレクトロン株式会社 | Plasma processing method and plasma processing apparatus |
| JP4838197B2 (en) * | 2007-06-05 | 2011-12-14 | 東京エレクトロン株式会社 | Plasma processing apparatus, electrode temperature adjusting apparatus, electrode temperature adjusting method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN1950545A (en) * | 2004-04-30 | 2007-04-18 | 兰姆研究公司 | Apparatus including showerhead electrode and heater for plasma processing |
| CN102315115A (en) * | 2010-06-30 | 2012-01-11 | 中国科学院微电子研究所 | Dry etching method for HfSiAlON high-K dielectric |
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