CN102632447B - Machining method of target surface - Google Patents
Machining method of target surface Download PDFInfo
- Publication number
- CN102632447B CN102632447B CN201110037143.6A CN201110037143A CN102632447B CN 102632447 B CN102632447 B CN 102632447B CN 201110037143 A CN201110037143 A CN 201110037143A CN 102632447 B CN102632447 B CN 102632447B
- Authority
- CN
- China
- Prior art keywords
- polishing
- grinding
- target material
- material surface
- target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 40
- 238000003754 machining Methods 0.000 title claims abstract description 23
- 238000005498 polishing Methods 0.000 claims abstract description 81
- 238000000227 grinding Methods 0.000 claims abstract description 67
- 239000004744 fabric Substances 0.000 claims abstract description 23
- 239000008367 deionised water Substances 0.000 claims abstract description 16
- 230000001050 lubricating effect Effects 0.000 claims abstract description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 244000137852 Petrea volubilis Species 0.000 claims abstract 3
- 239000013077 target material Substances 0.000 claims description 68
- 238000012545 processing Methods 0.000 claims description 24
- 230000003746 surface roughness Effects 0.000 claims description 10
- 229910021641 deionized water Inorganic materials 0.000 claims description 8
- 238000003672 processing method Methods 0.000 claims description 8
- 238000003801 milling Methods 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 4
- 238000007517 polishing process Methods 0.000 claims description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract description 17
- 229910052759 nickel Inorganic materials 0.000 abstract description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 abstract description 7
- 229910052802 copper Inorganic materials 0.000 abstract description 7
- 239000010949 copper Substances 0.000 abstract description 7
- 239000010936 titanium Substances 0.000 abstract description 7
- 229910052719 titanium Inorganic materials 0.000 abstract description 7
- 229910052782 aluminium Inorganic materials 0.000 abstract description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract description 6
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 abstract description 4
- 239000007769 metal material Substances 0.000 abstract description 4
- 239000004332 silver Substances 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 abstract description 4
- 229910052720 vanadium Inorganic materials 0.000 abstract description 3
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 abstract description 3
- 239000007788 liquid Substances 0.000 abstract 2
- 238000005406 washing Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 11
- 238000005477 sputtering target Methods 0.000 description 11
- 238000004544 sputter deposition Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000010408 film Substances 0.000 description 6
- 239000012535 impurity Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000004411 aluminium Substances 0.000 description 5
- 230000000803 paradoxical effect Effects 0.000 description 5
- 239000002173 cutting fluid Substances 0.000 description 4
- 239000012530 fluid Substances 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 4
- 210000000078 claw Anatomy 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005461 lubrication Methods 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910001651 emery Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Grinding Of Cylindrical And Plane Surfaces (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a machining method of a target surface, which belongs to the technical field of the machining process of the target surface. The method utilizes mechanical grinding and polishing equipment to machine. The invention provides equipment conditions for machining a target. A parallel roller shaft with an adjustable opening width is used, and water sand paper or cloth with the granularity of 20-2000 meshes covers the roller shaft; the water sand paper which is from the rough to the fine is firstly utilized and then the cloth is used; and meanwhile, de-ionized water is used for lubricating to grind and polish a metal material. After the grinding and the polishing, the high-pressure de-ionized water is used for washing the surface. In the specific application, the metal material comprises one or more of nickel, copper, silver, titanium, aluminum and vanadium. The machining method has advantages of no requirements on the target surface, fast grinding and polishing speed, no need of using cutting liquid and lubricating liquid for mechanically machining, no chemical reaction on the surface, thin stress layer, high whole uniformity, and no deformation of the whole body. The machining method of the target surface is a simple, reliable, economical and efficient machining method which is adapted to the target with a large area, a great length and a large thickness ratio.
Description
Technical field
The invention belongs to target material surface processing method technical field, relate to a kind of processing method of target material surface, the method uses Mechanical polishing equipment to carry out Surface Machining, and the method can be used for such as preparing sputtered target material (i.e. physical vapor deposition target material material, in this article " physical vapour deposition (PVD) " and " sputtering " commutative use).In a particular application, sputtered target material can comprise nickel, copper, silver, titanium, aluminium, vanadium one or more.Described sputtered target material can be called as " target material " hereinafter.
Background technology
Sputtered film material, in the related industries such as electronic information, stored record and display, has and applies extremely widely.Meanwhile, sputtering target material also increases year by year along with the growth requirement amount of these industries.The quality of target is to the performance important of sputtered film, especially the preparation of semiconductor integrated circuit chip is towards future development in large size (8,12 even 18 inches), the size of sputtering target material and sputtering power also will increase thereupon, also more and more higher to the processing request of sputtering target material.The process technology of large-area target has become key technology prepared by target material assembly.
The quality of the film formed on silicon chip by sputtering method can be subject to the impact for the target material surface sputtered.The impact of target material surface comprises stressor layers and roughness.
There is one deck stressor layers in target material surface, stressor layers and target interior tissue different.When sputtering, need to carry out pre-sputtering (burn in) to target, object is impurity and the defect such as oxide, stressor layers in order to remove target material surface, ensures that target can the normally starting the arc sputtering.
Stressor layers is thicker, then the time of pre-sputtering is longer, and efficiency is lower, and the possibility had an impact to sputter procedure is larger.
The roughness of target material surface also can have an impact to sputtering.When size exceed the out-of-flatness of certain level or projection be present in target surperficial time, paradoxical discharge can be produced in projection.Described paradoxical discharge can cause bulky grain sputter from target material surface and be deposited on silicon chip.The bulky grain of deposition can form spot and cause the short circuit of semiconductive thin film circuit on film.
The roughness of target material surface directly affects sputtering effect, and target material surface roughness is larger, and the possibility that paradoxical discharge occurs is larger, and target material surface roughness is less, and the possibility that paradoxical discharge occurs is less.Therefore, the possibility of paradoxical discharge can be reduced by reducing target material surface roughness, the film that the film quality of the target of higher roughness is higher can be formed thus.
Many materials can be used as the material of sputtering target material, comprise the simple metal materials such as such as nickel, copper, silver, titanium, aluminium.In a particular application, target material can comprise alloy or other metal alloys.
The conventional processing method of target material surface comprises: the process equipment such as lathe, planer, milling machine, grinding machine, buffing is processed.The roughness of lathe, planer, milling machine processing metallic can reach Ra 1.0 μm, and the roughness that grinding machine processes is higher, can reach Ra 0.3 μm.But for length and the very large thin plate, particularly hardness of thickness proportion and all very low simple metal thin plate of intensity, conventional method cannot be installed to workpiece to be machined.Being installed of lathe, planer, milling machine is all that use three to four claws fix workpiece to be machined, and for the thin plate that is installed, the claw of these equipment all can cause the problem making workpiece deformation.The ferrimagnet if use grinding machine is installed, the method that electromagnetism holds can be used, but for thin plate, the frictional force that the emery wheel of diamond or white fused alumina contacts with workpiece to be machined is excessive, the damage of workpiece can be caused, if processing nonferromugnetic material, the surrounding can only pushing down workpiece to be machined carries out mill processing, do not reach again the effect of whole workpiece surface roughness uniformity, further, if use grinding machine to be not suitable for processing the material partially glued as character such as aluminium, nickel, titaniums, otherwise, wheel face can be stuck with paste, cause emery wheel to scrap.The precision that buffing can make surface reach very high, but buffing is only applicable to fine finishining, target material surface flatness and the initial fineness of target are had high requirements, if surface slightly out-of-flatness, surface have granule to exist or initial roughness can not reach requirement, then not only waste time and energy, waste polishing material, and the homogeneous requirement of required surfacing cannot be reached.
Meanwhile, when using conventional machine-tooled method to process target material surface, need cutting fluid, lubricating fluid to carry out cooling, lubricating, can not ensure that all lubricating fluids do not have chemical reaction to target material surface.
In order to carry out the Surface Machining of large area, large length and the sputtering target material of thickness proportion, crucial problem is being installed of target after solving roughing, ensure target material surface processing after even, prevent target distortion, improve working (machining) efficiency, the problem such as prevent that surface from being polluted.
Therefore accordingly, needing exploitation one to be suitable for preparing a kind of grinding and polishing power should be not excessive, and be suitable for that processing length and thickness proportion are comparatively large, the Apparatus and method for of the target of thinner thickness, solve traditional diamond-making technique and can not process that this kind of length and thickness proportion are comparatively large, the problem of the target of the inclined viscosity of thinner thickness, character, and surface should not produce chemical reaction.
Summary of the invention
The present invention is in order to solve deficiency of the prior art, the invention provides a kind of processing method of target material surface, the method uses Mechanical polishing equipment, polishing processing is carried out to the surface of sheet metal, particularly comprises length and Thickness Ratio is higher, the application of the surperficial grinding and polishing of the metal sputtering target of thinner thickness.It can realize using conventional grinding and polishing material, reach and finished product processing is carried out to large area, large length and thickness proportion, thin metal sputtering target surface, metal sputtering target can be prevented to be out of shape simultaneously, prevent sputtering target material surface be subject to impurity and particle studded, avoid surface to produce the pollutions such as chemical change, enhance productivity, reduce production cost.
Technical scheme of the present invention is as follows:
A processing method for target material surface, the method uses Mechanical polishing equipment to carry out the target of the large length thickness proportion of Surface Machining, comprises the steps:
1) processed target material surface is through mechanical roughing, and mechanical roughing comprises Vehicle Processing, Milling Machining, mill processing, plane processing, and the surface roughness Ra after roughing is at 1.0 ~ 20 μm.
2) adopt Mechanical polishing equipment to carry out grinding and polishing to target material surface, wherein said Mechanical polishing equipment has two parallel roll shafts, and two parallel roll shafts can move in parallel up and down, described parallel roll shaft adjustable A/F, and A/F is between 1mm ~ 50mm;
3) on the parallel roll shaft of Mechanical polishing equipment, abrasive band or cloth is wrapped up, and drive abrasive band or cloth to rotate by the rotation of roll shaft, grinding and polishing target material surface, the relative motion of abrasive band or cloth and target material surface is utilized to carry out grinding and polishing to target, deionized water is used to carry out rinsing, lubricating in grinding and polishing process, the rotational line speed of the abrasive band that parallel roll shaft wraps up or cloth should be not less than 4m/s, and the roll shaft even angle rate of Mechanical polishing equipment rotates, to make speed even;
4) abrasive band on Mechanical polishing equipment, according to surface requirements, is changed abrasive band according to order from coarse to fine, is carried out grinding and polishing successively, grinding and polishing target material surface can be repeatedly, the abrasive band that parallel roll shaft wraps up, granularity is from 20 orders to 2000 orders, and described cloth is canvas, velvet or cloth Buddhist nun;
5) target material surface after grinding and polishing carries out high pressure de-ionized water rinse surface, and the surface requirements after flushing is without particle and impurity attachment.
Method of the present invention is applicable to metal targets, and described metal targets material comprises pure metallic nickel, copper, silver, titanium, aluminium, vanadium, and the alloy of two or more metal above-mentioned.
Described Mechanical polishing equipment processes the roughness that the target material surface obtained has Ra 0.3 ~ 1.0 μm.
The feature of this method is as follows:
1, target material surface adopts abrasive band and target relative motion and friction, and drop to minimum by the stressor layers on surface, stress drops to minimum.
2, target is without the need to being installed, and compared with conventional machining, substantially there is not distortion, is specially adapted to large area shape, and length and the larger thin plate target of thickness proportion.
3, target adopts overall grinding and polishing, and compared with taking turns grinding and polishing with cloth, overall uniformity, working (machining) efficiency are all improved largely, and requires much lower to initial roughness.
4, target grinding and polishing process uses waterproof abrasive paper, compared with processing, without the need to using cutting fluid, lubricating fluid, avoiding target material surface and producing chemical reaction, without the need to subsequent treatment with conventional mechanical.
5, use high pressure de-ionized water rinse after target grinding and polishing, ensure surface no-pollution further, without particle residue.
Compared with existing method of surface finish, the present invention requires low to target material surface, grinding and polishing speed is fast, the cutting fluid used without the need to using machined, lubricating fluid, surface is without chemical reaction, and stressor layers is thin, and overall uniformity is high, overall without distortion, be a kind of simple, reliable, economic, processing method of being applicable to large area, large length and thickness proportion target efficiently.
Detailed description of the invention
Below, the processing of sputtering target material of the present invention is illustrated.
So far, in industrial production, target is carried out to the means of Surface Machining, mainly contain the process equipments such as lathe, planer, milling machine, grinding machine.Roughness generally can reach Ra about 1.0 μm, and grinding machine can reach about Ra0.3 μm.But for the metal material that length thickness ratio is higher, except using grinding machine, also there is no effective manufacturing process at present.And especially for the material that nature relatively glues, as nickel, aluminium, titanium etc., grinding machine is then inapplicable.And said method all needs to use cutting fluid to carry out Cooling and Lubricator, can not ensure that target material surface does not have chemical reaction.And the target of cloth wheel grinding and polishing to thicker surface quality needs long-time grinding and polishing, easily produce stressor layers, expend grinding and polishing material, inefficiency.
The present inventor person, in order to improve the roughness on sputtering target material surface, improve working (machining) efficiency, prevent target to be out of shape, prevent target material surface from polluting, the thin plate target that especially length thickness ratio is larger, has carried out contrast test.By contrast test, the present invention is described in more detail.
Embodiment 1
Two pieces are processed into diameter through engine lathe is 400mm, and thickness is the pure nickel target blank of 3.3mm, continues respectively to use engine lathe to carry out Surface Machining and equipment of the present invention carries out Surface Machining.
Use engine lathe to add man-hour, engine lathe uses diamond tool, rotating speed 250r/min, depth of cut 0.1mm.By cylindrical, centripetal portion machines.
After completion of processing, nickel target is taken off from lathe claw.Find due to machining stress, target heart portion and external diameter are standing shape, have occurred distortion.
Use method of the present invention to carry out grinding and polishing to nickel target base, comprise the steps:
1) processed target blank surface is through lathe roughing, and the surface roughness Ra after roughing is 1.7 μm.
2) use Mechanical polishing equipment to have two parallel roll shafts can move in parallel up and down, adjustable A/F, A/F is 3mm;
3) the parallel roll shaft of Mechanical polishing equipment wraps up waterproof abrasive paper abrasive band, and drives abrasive band to rotate by the rotation of roll shaft, grinding and polishing target material surface, grinding and polishing process uses deionized water to carry out rinsing, lubricating, and abrasive band rotational line speed is 4m/s, and speed is even;
4) abrasive band on Mechanical polishing equipment adopts diamond waterproof abrasive paper 200 order grinding and polishing 4 times successively, then is replaced by 800 order abrasive band grinding and polishing 4 times, then is replaced by 1200 order abrasive band grinding and polishing 4 times;
5) target after the grinding and polishing of abrasive band, re-uses Ni Bu and carries out surperficial grinding and polishing, roll shaft wraps up Buddhist nun's cloth, roll shaft opening degree 3mm, Buddhist nun's cloth rotational line speed 7m/s that roll shaft wraps up, and uses deionized water rinsing and lubrication simultaneously, altogether grinding and polishing 8 times;
6) target material surface after grinding and polishing carries out high pressure de-ionized water rinse surface, and the surface after flushing, through range estimation, requires without particle and impurity attachment.
Do not find distortion through inspection after completion of processing, dimensional thickness is 3.1mm.Roughness Ra is 0.7 μm.
Embodiment 2
Two pieces is 800mm through planer roughing length, and width is 100mm, and thickness is the pure titanium target blank of 8.4mm, uses planer and grinding and polishing equipment of the present invention processing respectively.
Use the pure titanium target blank of planer processing, roughness Ra is 5.5 μm.
Use Mechanical polishing equipment to carry out the target of the large length thickness proportion of Surface Machining, comprise the steps:
1) processed target material surface is through planer roughing, and the surface roughness Ra after roughing is 5.5 μm.
2) Mechanical polishing equipment is used to adjust parallel roll shaft A/F to 8mm;
3) the parallel roll shaft of Mechanical polishing equipment wraps up waterproof abrasive paper abrasive band, and drive abrasive band and cloth to rotate by the rotation of roll shaft, grinding and polishing target material surface, use deionized water to carry out rinsing, lubricating simultaneously, abrasive band and target material surface are relative motions, the rotational line speed in abrasive band is 10m/s, and speed is even;
4) abrasive band on Mechanical polishing equipment adopts 400 order grinding and polishing 4 times, 800 order grinding and polishing 8 times, 1200 order grinding and polishing 8 times successively;
5) target after the grinding and polishing of abrasive band, re-uses Ni Bu and carries out surperficial grinding and polishing, roll shaft wraps up Buddhist nun's cloth, roll shaft opening degree 5mm, Buddhist nun's cloth rotational line speed 10m/s that roll shaft wraps up, and uses deionized water rinsing and lubrication simultaneously, altogether grinding and polishing 8 times;
6) target after grinding and polishing carries out high pressure de-ionized water rinse surface, and the surface requirements after flushing is without particle and impurity attachment.
According to method of the present invention, according to said process, the roughness Ra of target material surface is 0.4 μm, does not find distortion.
Embodiment 3
Two block lengths are 100mm, and width is 100mm, and thickness is the fine copper target blank of 5.5mm.Use planer and grinding and polishing equipment of the present invention processing respectively.
Use the fine copper target blank of planer processing, roughness Ra is 6.3 μm.
Use Mechanical polishing equipment to carry out the target of Surface Machining, comprise the steps:
1) through planer rough machined copper target blank surface roughness Ra be 6.3 μm;
2) adjust two parallel roll shafts of Mechanical polishing equipment, A/F is 5mm;
3) parallel roll shaft wraps up waterproof abrasive paper abrasive band, and drive abrasive band and cloth to rotate by the rotation of roll shaft, grinding and polishing target material surface, use deionized water to carry out rinsing, lubricating, the rotational line speed in abrasive band is 7m/s, and speed is even simultaneously;
4) abrasive band on Mechanical polishing equipment adopts 80 order grinding and polishing 4 times, 180 order 4 times, 800 order grinding and polishing 6 times, 1200 order grinding and polishing 8 times successively;
5) target after the grinding and polishing of abrasive band, re-uses velvet and carries out surperficial grinding and polishing, roll shaft wraps up velvet, roll shaft opening degree 5mm, the velvet rotational line speed 7m/s that roll shaft wraps up, and uses deionized water rinsing and lubrication simultaneously, altogether grinding and polishing 8 times;
6) target material surface after grinding and polishing carries out high pressure de-ionized water rinse surface, and the surface requirements after flushing is without particle and impurity attachment.
After completion of processing, through inspection, the target material surface roughness Ra using method of the present invention to process is 0.4 μm, does not find distortion.
The above; be only the present invention's preferably detailed description of the invention, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection domain of claim.
Claims (8)
1. a processing method for target material surface, is characterized in that the method comprises the steps:
(1) mechanical roughing is carried out to processed target material surface;
(2) adopt Mechanical polishing equipment to carry out grinding and polishing to target material surface, wherein said Mechanical polishing equipment has two parallel roll shafts that can move in parallel up and down, and the A/F of described parallel roll shaft can adjust;
(3) with the target material surface of high pressure de-ionized water rinse after grinding and polishing;
Wherein step (2) specifically comprises the steps:
A the A/F of described parallel roll shaft is adjusted to required width by ();
B () wraps up abrasive band or cloth on parallel roll shaft, and drive abrasive band or cloth to rotate grinding and polishing target material surface by the rotation of roll shaft, utilize the relative motion of abrasive band or cloth and target material surface to carry out grinding and polishing to target, in grinding and polishing process, use deionized water to carry out rinsing, lubricating;
C the abrasive band on () Mechanical polishing equipment is according to target material surface requirement, the order from coarse to fine according to the granularity in abrasive band changes abrasive band, carries out grinding and polishing successively; According to target material surface situation, abrasive band from coarse to fine is used to carry out grinding and polishing successively, behind each replacing abrasive band to the grinding and polishing of target material surface repeatedly;
Wherein, the rotational line speed of the abrasive band that parallel roll shaft wraps up or cloth is more than or equal to 4m/s, and the roll shaft even angle rate of Mechanical polishing equipment rotates.
2. method according to claim 1, is characterized in that: the mechanical roughing in step (1) comprise Vehicle Processing, Milling Machining, mill processing, plane processing in one or more.
3. method according to claim 1, is characterized in that: described abrasive band is waterproof abrasive paper.
4. method according to claim 1, is characterized in that: described cloth is canvas, velvet or cloth Buddhist nun.
5. method according to claim 1, is characterized in that: after the grinding and polishing of use sand paper, use cloth to carry out grinding and polishing to target material surface.
6. method according to claim 1, is characterized in that: the thickness range of described target is 1mm ~ 40mm, and length and the Thickness Ratio of described target are greater than 20:1.
7. method according to claim 1, is characterized in that: the target material surface roughness Ra after step (1) roughing is at 1.0 ~ 20 μm.
8. method according to claim 1, is characterized in that: described Mechanical polishing equipment processes the roughness that the target material surface obtained has Ra0.3 ~ 1.0 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110037143.6A CN102632447B (en) | 2011-02-12 | 2011-02-12 | Machining method of target surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110037143.6A CN102632447B (en) | 2011-02-12 | 2011-02-12 | Machining method of target surface |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102632447A CN102632447A (en) | 2012-08-15 |
| CN102632447B true CN102632447B (en) | 2015-01-14 |
Family
ID=46617119
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110037143.6A Active CN102632447B (en) | 2011-02-12 | 2011-02-12 | Machining method of target surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102632447B (en) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104668883A (en) * | 2013-12-03 | 2015-06-03 | 宁波江丰电子材料股份有限公司 | Processing method of target module sputtering surface |
| CN107866721A (en) * | 2016-09-26 | 2018-04-03 | 合肥江丰电子材料有限公司 | The processing method of target material assembly |
| CN111975465A (en) * | 2020-08-14 | 2020-11-24 | 合肥江丰电子材料有限公司 | Polishing process of molybdenum target sputtering surface |
| CN112828541A (en) * | 2021-01-04 | 2021-05-25 | 宁波江丰电子材料股份有限公司 | Tantalum target material and processing method of sputtering surface thereof |
| CN113021125B (en) * | 2021-03-04 | 2022-09-30 | 宁波江丰电子材料股份有限公司 | Method for processing titanium target sputtering surface |
| CN113442000A (en) * | 2021-06-08 | 2021-09-28 | 先导薄膜材料有限公司 | Preparation method of metallic bismuth planar target |
| CN115488409A (en) * | 2022-10-25 | 2022-12-20 | 宁波江丰电子材料股份有限公司 | Method for processing patterns of anti-sticking board |
| CN119328426A (en) * | 2024-09-27 | 2025-01-21 | 西安理工大学 | Surface treatment method of pure titanium sputtering target |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2734412Y (en) * | 2004-09-30 | 2005-10-19 | 王希林 | Single/double sided sander |
| CN101376228A (en) * | 2008-09-28 | 2009-03-04 | 大连理工大学 | Method for grinding soft crisp functional crystal |
| CN101700616A (en) * | 2009-11-10 | 2010-05-05 | 宁波江丰电子材料有限公司 | Surface processing method of sputtering target material |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5820446A (en) * | 1996-06-07 | 1998-10-13 | Komag, Incorporated | Apparatus and method for texturing rigid-disk substrates |
| US6769974B2 (en) * | 2002-11-01 | 2004-08-03 | Wang Tien Wang | Sand-belt finishing machine having a sand-belt replacement mechanism |
| CN101791779A (en) * | 2009-12-03 | 2010-08-04 | 北京有色金属研究总院 | Semiconductor silicon wafer manufacture process |
-
2011
- 2011-02-12 CN CN201110037143.6A patent/CN102632447B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2734412Y (en) * | 2004-09-30 | 2005-10-19 | 王希林 | Single/double sided sander |
| CN101376228A (en) * | 2008-09-28 | 2009-03-04 | 大连理工大学 | Method for grinding soft crisp functional crystal |
| CN101700616A (en) * | 2009-11-10 | 2010-05-05 | 宁波江丰电子材料有限公司 | Surface processing method of sputtering target material |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102632447A (en) | 2012-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102632447B (en) | Machining method of target surface | |
| JP5467735B2 (en) | Cylindrical sputtering target | |
| CN102501045B (en) | Method and device for processing nickel target component | |
| JP6066018B2 (en) | Sputtering target material and manufacturing method thereof | |
| JP5671510B2 (en) | Semiconductor device substrate grinding method | |
| Uhlmann et al. | A new process design for manufacturing sapphire wafers | |
| CN101791779A (en) | Semiconductor silicon wafer manufacture process | |
| CN114161245B (en) | Silicon wafer thinning device and thinning processing technology for monocrystalline silicon wafer | |
| US20210047750A1 (en) | SEED CRYSTAL FOR SINGLE CRYSTAL 4H-SiC GROWTH AND METHOD FOR PROCESSING THE SAME | |
| CN113547390B (en) | Tungsten target assembly and surface processing method thereof | |
| CN104842253A (en) | Polishing device for optical grade plane processing of silicon carbide crystals and processing method | |
| CN113021125B (en) | Method for processing titanium target sputtering surface | |
| CN104400567A (en) | Super-mirror polishing method of metal plate | |
| JP2006247835A (en) | Super-abrasive grain working tool and its method of use | |
| JPH03257158A (en) | sputtering target | |
| CN110900318A (en) | Mirror polishing processing method for injection mold | |
| CN102029570A (en) | Method and device for machining tungsten and titanium alloy target material | |
| CN103707003B (en) | The processing method of tungsten titanium alloy plate | |
| CN111745470A (en) | Mirror polishing processing method for steel material | |
| Zhang et al. | Material removal mechanism of precision grinding of soft-brittle CdZnTe wafers | |
| JP2013094924A (en) | Grinding method for ceramic substrate with through electrode | |
| JP2010238310A (en) | Method for manufacturing substrate for magnetic disk | |
| Li et al. | 1.6 Precision grinding, lapping, polishing, and post-processing of optical glass | |
| CN102528645A (en) | Double-sided polishing method for large-sized ultra-thin quartz glass sheets | |
| CN103042444B (en) | A kind of artificial diamond compact tool grinding method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: YOUYAN YIJIN NEW MATERIAL CO., LTD. Free format text: FORMER OWNER: BEIJING CENTRAL INST.OF THE NONFERROUS METAL Effective date: 20130822 Free format text: FORMER OWNER: YOUYAN YIJIN NEW MATERIAL CO., LTD. Effective date: 20130822 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| COR | Change of bibliographic data |
Free format text: CORRECT: ADDRESS; FROM: 100088 XICHENG, BEIJING TO: 102200 CHANGPING, BEIJING |
|
| TA01 | Transfer of patent application right |
Effective date of registration: 20130822 Address after: 102200 Changping District super Road, Beijing, No. 33 Applicant after: Youyan Yijin New Material Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Applicant before: General Research Institute for Nonferrous Metals Applicant before: Youyan Yijin New Material Co., Ltd. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |