CN102818664A - Method for detecting film stress distribution - Google Patents
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- CN102818664A CN102818664A CN2012101381798A CN201210138179A CN102818664A CN 102818664 A CN102818664 A CN 102818664A CN 2012101381798 A CN2012101381798 A CN 2012101381798A CN 201210138179 A CN201210138179 A CN 201210138179A CN 102818664 A CN102818664 A CN 102818664A
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- 238000000034 method Methods 0.000 title claims abstract description 34
- 238000001514 detection method Methods 0.000 claims abstract description 35
- 238000000151 deposition Methods 0.000 claims abstract description 20
- 230000008021 deposition Effects 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 94
- 239000010409 thin film Substances 0.000 claims description 64
- 239000012528 membrane Substances 0.000 claims description 33
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 32
- 238000005516 engineering process Methods 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 14
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 7
- 238000005229 chemical vapour deposition Methods 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 5
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 3
- 230000007935 neutral effect Effects 0.000 claims description 3
- 238000004062 sedimentation Methods 0.000 claims description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 238000005137 deposition process Methods 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 238000000691 measurement method Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000008602 contraction Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- -1 monox Substances 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000000452 restraining effect Effects 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
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Abstract
The invention discloses a method for detecting film stress distribution. The method for detecting film stress distribution comprises the following steps: manufacturing a plurality of reference films with different process parameters by using a deposition process; measuring an overall stress value and an average refractive index of each reference film; making a relation curve of a standard stress value and the average refractive index according to the overall stress value and the corresponding average refractive index of the reference film; preparing a film to be measured; measuring the refractive indexes of points to be detected at different positions on the film to be measured; obtaining the stress value of each point to be detected of the film to be measured according to the relation curve of the standard stress value and the average refractive index; and determining the stress distribution of the film to be measured. With the adoption of the method, the stress distribution situation of the film to be measured can be obtained only by measuring the refractive index of the film to be measured for only one time, thereby being beneficial to carrying out detection control over film deposition.
Description
Technical field
The present invention relates to technical field of semiconductor device, particularly relate to the detection method that a kind of membrane stress distributes.
Background technology
In the technical field of semiconductor device, from macroscopic perspective, the main cause that film produces stress is that film is with the Thermal Contraction Coefficient difference between the semiconductor devices substrate.Said film does not have stress when being deposited on the semiconductor devices substrate under higher temperature, but after the film cooling, because film has certain difference with the Thermal Contraction Coefficient between the substrate, thereby show certain stress.
Simultaneously, film also has certain internal stress, and the main cause that produces this internal stress is inner lattice imperfection of membraneous material or the inner distortional strain energy of amorphous, and usually said membrane stress is the summation of the components of stress that cause of each factor.
The stress of film is a very important parameters for semiconductor technology; On the one hand; Uncontrollable stress can cause the breaking etc. of be full of cracks or even wafer of film, and on the other hand, people also increase the performance of device simultaneously at the stress that utilizes film; For example heavily stressed silicon nitride etch restraining barrier, and stress memory technique etc.Therefore, for the stress detection of film, be very important.
The method of existing detection membrane stress is through the difference of the radius-of-curvature of measurement wafer before and after deposit film, calculates the stress value that obtains film, and concrete formula does
Wherein, σ is the stress of film, and E is the Young modulus of film, and ν is the Poisson ratio of film, t
sBe substrate thickness, t
fBe film thickness, R
1, R
2Be respectively the radius-of-curvature of thin film deposition front and back.Yet this method can only provide the mean stress value of film, can not provide stress distribution, is far from being enough for the R&D process of new product in the reality and the detection of thin film deposition processes.
Summary of the invention
The objective of the invention is to, solving existing radius of curvature measurement method can't carry out the problem that stress detects to the film diverse location, realizes the control that membrane stress is distributed.
For solving the problems of the technologies described above, the detection method that the present invention provides a kind of membrane stress to distribute comprises: utilize depositing operation, under different parameter, process a plurality of reference thin films, measure the integrated stress value and average refraction index of each said reference thin film; Integrated stress value according to all reference thin films makes standard stress value and average refraction index relation curve with corresponding average refraction index; Prepare film to be measured; Measure the refraction index of the measuring point to be checked of diverse location on the said film to be measured; Obtain the stress value of each measuring point to be checked of said film to be measured according to said standard stress and refraction index relation curve, and confirm the stress distribution of said film to be measured.
Optional, the integrated stress value of each said reference thin film adopts radius of curvature method to measure.
Optional, the step of measuring the average refraction index of each said reference thin film comprises: selected some with reference to check point on each said reference thin film; Measure each refraction index with reference to check point; Obtain the average refraction index of said reference thin film according to all refraction indexs with reference to check point.
Optional, said quantity with reference to check point is more than or equal to 9.
Optional, said quantity with reference to check point is 49.
Optional, the position of the reference check point of each said reference thin film is all corresponding identical with the position of the reference check point of other reference thin films.
Optional, said depositing operation is physical gas-phase deposition or chemical vapor deposition method.
Optional, said depositing operation is a plasma enhanced chemical vapor deposition technology.
Optional, the technological parameter of said depositing operation comprises a kind of or its combination in pressure, temperature, power, rate of sedimentation and the reacting gas.
Optional, the requirement that said standard stress is relevant according to the statistics neutral line with the refraction index relation curve obtains through linear fit.
Optional, after the stress distribution of confirming said film to be measured, also comprise:, obtain the stress distribution non-uniformity of said film to be measured in conjunction with the non-uniformity formula according to the stress distribution of said film to be measured.
Optional; Said non-uniformity formula is:
said maximal value be the maximal value of the stress value of measuring point to be checked in the film to be measured; The minimum value of the stress value of measuring point to be checked in the said film to be measured, the mean value of the stress value of all measuring points to be checked in the said film to be measured.
Optional, the quantity of said reference thin film is no less than 3.
Optional, the material of said reference thin film is identical with the material of said film to be measured.
Optional, the material of said film to be measured is silicon nitride, titanium nitride, monox, metal simple-substance or metallic compound.
Compared with prior art, the detection method of membrane stress distribution according to the invention has the following advantages:
1, in prior art, adopt the radius of curvature measurement method need measure merely three times; Form radius-of-curvature and film thickness after preceding radius-of-curvature, film form to obtain film; Detection method according to the invention only need be measured a refraction index to film to be measured and get final product, thereby can detect membrane stress very fast after passing through drawing standard stress and refraction index relation curve; The simplified measurement process, and shorten Measuring Time.
2, available technology adopting radius of curvature measurement method can only obtain an average membrane stress value; Can not the stress distribution of film be detected; And detection method according to the invention can be through measuring film to be measured the stress value of the diverse location refraction index that obtains film distribute, and further obtain the stress distribution situation of film, utilize this detection method; Can obtain membrane stress fast and distribute and non-uniformity, control is comprehensively detected in each zone that helps film.
Description of drawings
Fig. 1 is the process flow diagram of the detection method that distributes of the membrane stress of one embodiment of the invention;
Fig. 2 is the distributing position synoptic diagram of the reference check point of reference thin film in one embodiment of the invention;
Standard stress and the refraction index relation curve of Fig. 3 for drawing in one embodiment of the invention.
Embodiment
To combine synoptic diagram that the detection method that membrane stress of the present invention distributes is described in more detail below; The preferred embodiments of the present invention have wherein been represented; Should be appreciated that those skilled in the art can revise the present invention described here, and still realize advantageous effects of the present invention.Therefore, following description is appreciated that extensively knowing to those skilled in the art, and not as limitation of the present invention.
In the following passage, with way of example the present invention is described more specifically with reference to accompanying drawing.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much, only in order to convenient, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is, through under different parameter, processing a plurality of reference thin films, measures the integrated stress value and average refraction index of each reference thin film, and drawing standard stress and refraction index relation curve; Prepare film to be measured, measure on the film to be measured the refraction index of measuring point to be checked on the diverse location respectively, and obtain the stress value of each measuring point to be checked of film to be measured and the stress distribution of definite said film to be measured according to said standard stress and refraction index relation curve.
Please refer to Fig. 1, Fig. 1 is the process flow diagram of the detection method of membrane stress distribution of the present invention, and it comprises the steps:
Step S1 utilizes depositing operation, under different parameter, processes a plurality of reference thin films, measures the integrated stress value and average refraction index of each said reference thin film.
In said step S1, said depositing operation can be physical gas-phase deposition (PVD) or chemical vapor deposition method (CVD).Select the plasma enhanced chemical vapor deposition technology (PECVD) in the chemical vapor deposition in the present embodiment, the advantages such as stress that this plasma enhanced chemical vapor deposition technology has low temperature, low pressure, high deposition rate and can control deposit film.Wherein, the technological parameter of said depositing operation comprises reacting gas, pressure, temperature, power and rate of sedimentation etc., and reacting gas can be decided according to the specific requirement of technology.It should be noted, between the said silicon nitride reference thin film and and silicon nitride film to be measured between difference only be to have adopted different parameter in their forming process.
The integrated stress value of each said reference thin film can adopt radius of curvature method to measure.The step of measuring the average refraction index of each said reference thin film comprises: selected some with reference to check point on each said reference thin film; Measure each refraction index with reference to check point; Obtain the average refraction index of said reference thin film according to all refraction indexs with reference to check point.
Adopt said method to obtain average refraction index; On each reference thin film, select to answer as much as possible choosing with reference to check point; Generally should be no less than 9; Preferable can select 49 with reference to check point, and the position of the reference check point of choosing is distributed on the reference thin film as far as possible comprehensively, equably, to improve the accuracy of average refraction index.In addition, the position of the reference check point of each said reference thin film is all corresponding identical with the position of the point of the reference detection of other reference thin films.
The material chosen of said reference thin film and the material of film to be measured are consistent; The material of said reference thin film is silicon nitride, titanium nitride, monox, metal simple-substance or metallic compound; Below be that silicon nitride is that example specifies the detection method that membrane stress distributes with the material of reference thin film, other for example copper simple substance layer etc. also can be used as the material of reference thin film and film to be measured among the present invention.
In addition, for improving accuracy, the quantity of said reference thin film is no less than 3, and for example the quantity of reference thin film is 4.
In preferred embodiment, referring to Fig. 2, select the reference thin film 100 of 4 groups of silicon nitride materials, select 49 on each reference thin film 100 with reference to check point 200.At first, under different parameter, process 4 groups of silicon nitride reference thin films 100, adopt radius of curvature method to measure the integrated stress of these 4 groups of silicon nitride reference thin films 100, obtain 4 integrated stress values through depositing operation; Then; Measure the refraction index of these 4 groups of silicon nitride reference thin films 100 with the elliptically polarized light method; Every group of silicon nitride reference thin film 100 got 49 with reference to check point 200 at diverse location, and calculates these 49 the average refraction indexs with reference to check point 200, obtains 4 average refraction indexs; At last, obtain corresponding 4 groups of integrated stress values and average refraction index data by 4 integrated stress values and 4 average refraction indexs.Enumerated in the table 1 on 4 groups of reference thin films 100 of present embodiment with reference to the refraction index of check point 200, the average refraction index and the integrated stress value of reference thin film 100.Associative list 1 and Fig. 2, every group of reference thin film 100 has 49 with reference to check point 200, corresponding obtains 49 refraction indexs, calculates the average refraction index of this reference thin film 100 according to the numerical value of these 49 refraction indexs, obtains 4 groups of average refraction indexs altogether.
Table 1
Step S2 makes standard stress value and average refraction index relation curve according to the integrated stress value of all reference thin films and the average refraction index of correspondence.
In the present embodiment, the relation of stress and refraction index fits to linear relationship.Therefore, the requirement that said standard stress is relevant according to the statistics neutral line with the refraction index relation curve obtains through linear fit.
In the described embodiment of step S1; The integrated stress value of silicon nitride reference thin film 100 and the refraction index of silicon nitride reference thin film 100 have certain linear; Especially when the stress of silicon nitride reference thin film 100 is higher, the linearity is better when 700MPa ~ 2000MPa especially.Determine because the refraction index of silicon nitride reference thin film 1 00 mainly is the character by silicon nitride film, can influence the refraction index of silicon nitride reference thin film 100 like the element proportion in the silicon nitride film.And, in the prepared process, adopt technology such as UV-irradiation, plasma treatment to remove some hydrogen (H) element in the film usually for silicon nitride film, improve stress through the ratio that changes the H element.Thereby the stress of the refraction index of silicon nitride film and silicon nitride film is to have the favorable linearity correlativity within the specific limits.Equally, reference thin film 100 and film to be measured for other materials such as silicon nitride, titanium nitride, monox, metal simple-substance or metallic compounds have the favorable linearity correlativity equally.
With embodiment among the said step S1 is example; Associative list 1 is with shown in Figure 2; According to the integrated stress value of 4 groups of silicon nitride reference thin films 100 in the table 1 and corresponding 4 groups of silicon nitride reference thin films, 100 average refraction indexs, the method drafting through linear fit obtains standard stress and refraction index relation curve.Fig. 3 is standard stress and the refraction index relation curve in the embodiment of the invention, and horizontal ordinate x represents refraction index, and ordinate y represents stress, and unit is Mpa.4 points among Fig. 3 are respectively the 4 groups of integrated stress values and the average refraction index data of silicon nitride reference thin film 100 in the table 1; Standard stress and refraction index relation curve that straight line obtains for the linear match according to these 4 points; Stress and refraction index satisfy relation: y=5005x-7535 basically; Be approximately linear relationship, its linear relationship degree is 0.968.
Step S3; Prepare film to be measured; Measure the refraction index of the measuring point to be checked of diverse location on the said film to be measured, obtain the stress value of each measuring point to be checked of said film to be measured, and confirm the stress distribution of said film to be measured according to said standard stress and refraction index relation curve.
In the step of measuring film to be measured, also comprise:, obtain the stress distribution non-uniformity of said film to be measured in conjunction with the non-uniformity formula according to the stress distribution of said film to be measured.
Said non-uniformity formula is:
said maximal value be the maximal value of the stress value of measuring point to be checked in the film to be measured; The minimum value of the stress value of measuring point to be checked in the said film to be measured, the mean value of the stress value of all measuring points to be checked in the said film to be measured.
In the step of above-mentioned measurement film to be measured; For improving the accuracy of stress distribution non-uniformity; On film to be measured, should as much as possiblely choose measuring point to be checked; And the position of the measuring point of choosing to be checked is distributed on the film to be measured as far as possible comprehensively, equably, but the quantity of measuring point to be checked does not require with identical with reference to check point with the position on the film to be measured.In preferred embodiment, select 49 measuring points to be checked, the position is as shown in Figure 2.
With embodiment among said step S1 and the step S2 is example, at first, processes silicon nitride film to be measured through depositing operation, and diverse location is got 49 measuring points to be checked on silicon nitride film to be measured, adopts the elliptically polarized light method to measure the refraction index of these 49 measuring points to be checked; Then; According to standard stress and refraction index relation curve shown in Figure 3; These 49 refraction indexs are updated among standard stress and the refraction index relation curve y=5005x-7535; Obtain pairing 49 stress values of refraction index of these 49 measuring points to be checked respectively, can obtain the stress distribution of silicon nitride film to be measured through these 49 stress values; At last, calculate the stress distribution non-uniformity of silicon nitride film to be measured according to said non-uniformity formula.Because in embodiments of the present invention, step S1 using plasma enhanced chemical vapor deposition prepared silicon nitride reference thin film is so prepare also using plasma enhanced chemical vapor deposition technology of silicon nitride depositing of thin film technology to be measured in the present embodiment.Other chemical vapor deposition methods or physical gas-phase deposition, low-pressure chemical vapor deposition process lamp for example is all within thought range of the present invention.
In sum, compared with prior art, the detection method that membrane stress according to the invention distributes has the following advantages:
1, in prior art, adopt the radius of curvature measurement method need measure merely three times; Form radius-of-curvature and film thickness after preceding radius-of-curvature, film form to obtain film; Detection method according to the invention only need be measured a refraction index to film to be measured and get final product, thereby can detect membrane stress very fast after passing through drawing standard stress and refraction index relation curve; The simplified measurement process, and shorten Measuring Time.
2, available technology adopting radius of curvature measurement method can only obtain an average membrane stress value; Can not the stress distribution of film be detected; And detection method according to the invention can be through measuring film to be measured the stress value of the diverse location refraction index that obtains film distribute, and further obtain the stress distribution situation of film, utilize this detection method; Can obtain membrane stress fast and distribute and non-uniformity, control is comprehensively detected in each zone that helps film.
Obviously, those skilled in the art can carry out various changes and modification to the present invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (15)
1. the detection method that distributes of a membrane stress comprises:
Utilize depositing operation, under different parameter, process a plurality of reference thin films, measure the integrated stress value and average refraction index of each said reference thin film;
Integrated stress value according to all reference thin films makes standard stress value and average refraction index relation curve with corresponding average refraction index;
Prepare film to be measured; Measure the refraction index of the measuring point to be checked of diverse location on the said film to be measured; Obtain the stress value of each measuring point to be checked of said film to be measured according to said standard stress and refraction index relation curve, and confirm the stress distribution of said film to be measured.
2. the detection method that membrane stress as claimed in claim 1 distributes is characterized in that, the integrated stress value of each said reference thin film adopts radius of curvature method to measure.
3. the detection method that membrane stress as claimed in claim 1 distributes is characterized in that the step of measuring the average refraction index of each said reference thin film comprises:
Selected some on each said reference thin film with reference to check point;
Measure each refraction index with reference to check point;
Obtain the average refraction index of said reference thin film according to all refraction indexs with reference to check point.
4. the detection method that membrane stress as claimed in claim 3 distributes is characterized in that, said quantity with reference to check point is more than or equal to 9.
5. the detection method that membrane stress as claimed in claim 4 distributes is characterized in that said quantity with reference to check point is 49.
6. the detection method that membrane stress as claimed in claim 3 distributes is characterized in that, the position of the reference check point of each said reference thin film is all corresponding identical with the position of the reference check point of other reference thin films.
7. the detection method that membrane stress as claimed in claim 1 distributes is characterized in that said depositing operation is physical gas-phase deposition or chemical vapor deposition method.
8. the detection method that membrane stress as claimed in claim 7 distributes is characterized in that said depositing operation is a plasma enhanced chemical vapor deposition technology.
9. the detection method that membrane stress as claimed in claim 7 distributes is characterized in that the technological parameter of said depositing operation comprises a kind of or its combination in pressure, temperature, power, rate of sedimentation and the reacting gas.
10. the detection method that membrane stress as claimed in claim 1 distributes is characterized in that the requirement that said standard stress is relevant according to the statistics neutral line with the refraction index relation curve obtains through linear fit.
11. the detection method that membrane stress as claimed in claim 1 distributes; It is characterized in that; After the stress distribution of confirming said film to be measured, also comprise:, obtain the stress distribution non-uniformity of said film to be measured in conjunction with the non-uniformity formula according to the stress distribution of said film to be measured.
12. the detection method that membrane stress as claimed in claim 11 distributes is characterized in that said non-uniformity formula is:
said maximal value is the maximal value of the stress value of measuring point to be checked in the film to be measured; The minimum value of the stress value of measuring point to be checked in the said film to be measured, the mean value of the stress value of all measuring points to be checked in the said film to be measured.
13. the detection method that the membrane stress described in any one of claim 1 to 12 distributes is characterized in that the quantity of said reference thin film is no less than 3.
14., it is characterized in that the material of said reference thin film is identical with the material of said film to be measured like any detection method that described membrane stress distributes of claim 1 to 12.
15., it is characterized in that the material of said film to be measured is silicon nitride, titanium nitride, monox, metal simple-substance or metallic compound like any detection method that described membrane stress distributes of claim 1 to 12.
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| CN104019931A (en) * | 2014-06-19 | 2014-09-03 | 重庆大学 | Method for determining maximum stress of prestressed annular thin film under transverse concentrated load |
| CN104020036A (en) * | 2014-06-19 | 2014-09-03 | 重庆大学 | Method for determining maximal deflection of annular prestress film under transverse centralized load |
| CN105403344A (en) * | 2015-12-16 | 2016-03-16 | 浙江大学 | Pipeline real-time stress obtaining method |
| CN115360995A (en) * | 2022-08-24 | 2022-11-18 | 武汉敏声新技术有限公司 | A composite piezoelectric thin film, its preparation method, and resonator |
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| CN104019931A (en) * | 2014-06-19 | 2014-09-03 | 重庆大学 | Method for determining maximum stress of prestressed annular thin film under transverse concentrated load |
| CN104020036A (en) * | 2014-06-19 | 2014-09-03 | 重庆大学 | Method for determining maximal deflection of annular prestress film under transverse centralized load |
| CN104019931B (en) * | 2014-06-19 | 2016-03-02 | 重庆大学 | A kind of determine horizontal centre-point load under the method for annular prestressed film maximum stress |
| CN104020036B (en) * | 2014-06-19 | 2016-03-23 | 重庆大学 | A Method for Determining the Maximum Deflection of Annular Prestressed Membranes Under Concentrated Lateral Loads |
| CN105403344A (en) * | 2015-12-16 | 2016-03-16 | 浙江大学 | Pipeline real-time stress obtaining method |
| CN105403344B (en) * | 2015-12-16 | 2018-03-16 | 浙江大学 | The acquisition methods of the real-time stress of pipeline |
| CN115360995A (en) * | 2022-08-24 | 2022-11-18 | 武汉敏声新技术有限公司 | A composite piezoelectric thin film, its preparation method, and resonator |
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