CN102820207A - Method and device for avoiding chloroethylene failure of oxidation furnace tube - Google Patents
Method and device for avoiding chloroethylene failure of oxidation furnace tube Download PDFInfo
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- CN102820207A CN102820207A CN2011101570460A CN201110157046A CN102820207A CN 102820207 A CN102820207 A CN 102820207A CN 2011101570460 A CN2011101570460 A CN 2011101570460A CN 201110157046 A CN201110157046 A CN 201110157046A CN 102820207 A CN102820207 A CN 102820207A
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- 238000000034 method Methods 0.000 title claims abstract description 46
- 230000003647 oxidation Effects 0.000 title claims abstract description 39
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 39
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical group ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 title claims 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical compound ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims abstract description 80
- 239000013585 weight reducing agent Substances 0.000 claims abstract description 14
- KFUSEUYYWQURPO-UHFFFAOYSA-N 1,2-dichloroethene Chemical group ClC=CCl KFUSEUYYWQURPO-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000007689 inspection Methods 0.000 claims description 3
- 230000000007 visual effect Effects 0.000 claims description 3
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 19
- 238000012544 monitoring process Methods 0.000 abstract description 11
- 239000012535 impurity Substances 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 230000007423 decrease Effects 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000002245 particle Substances 0.000 description 3
- PSOUOKYUENGTOA-UHFFFAOYSA-N ethene;dihydrochloride Chemical group Cl.Cl.C=C PSOUOKYUENGTOA-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005303 weighing Methods 0.000 description 2
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
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Abstract
一种避免氧化炉管二氯乙烯失效的方法和装置，用于确保热氧化生长过程中二氯乙烯通过N2的携带方式正常通入所述氧化炉管内，对于每个含有二氯乙烯的工艺制程，采集其二氯乙烯重量减少的数据，如所述二氯乙烯重量减少的数据在正常值范围内，则说明每次都有足够量的二氯乙烯通进所述氧化炉管内。本发明通过直接监测DCE的重量是否减少来确保DCE送入氧化炉管内，消除了传统技术中通过监测N2的流量而间接地监测DCE是否送入氧化炉管所隐藏的不确定因素，保证了DCE能够有效去除SiO2生长过程的杂质离子，确保了SiO2的薄膜质量。
A method and device for avoiding the failure of ethylene dichloride in an oxidation furnace tube, used to ensure that ethylene dichloride is normally passed into the oxidation furnace tube through the carrying mode of N2 during the thermal oxidation growth process, for each process containing ethylene dichloride Process, collect the data of its dichlorethylene weight reduction, if the data of the dichlorethylene weight reduction is within the normal value range, it means that sufficient amount of dichloride is passed into the oxidation furnace tube each time. The present invention ensures that DCE is sent into the oxidation furnace tube by directly monitoring whether the weight of DCE is reduced, eliminates the hidden uncertain factors in the traditional technology by monitoring the flow of N2 and indirectly monitoring whether DCE is sent into the oxidation furnace tube, and ensures DCE can effectively remove impurity ions in the growth process of SiO 2 and ensure the film quality of SiO 2 .
Description
技术领域 technical field
本发明属于半导体技术领域，尤其涉及一种避免氧化炉管二氯乙烯失效的方法和装置。The invention belongs to the technical field of semiconductors, and in particular relates to a method and a device for avoiding failure of ethylene dichloride in an oxidation furnace tube.
背景技术 Background technique
热氧化法生长二氧化硅(SiO2)，因其生长出的SiO2质量最好而成为半导体行业生长高质量SiO2的主要方法。在热氧化法生长SiO2过程中，通常会通入二氯乙烯(DCE，Cl2C2H2，Dichloroethylene)，以有效去除SiO2生长过程的杂质离子，从而提高SiO2薄膜质量。The growth of silicon dioxide (SiO 2 ) by thermal oxidation has become the main method for growing high-quality SiO 2 in the semiconductor industry because of the best quality of grown SiO 2 . During the growth of SiO 2 by the thermal oxidation method, dichloroethylene (DCE, Cl 2 C 2 H 2 , Dichloroethylene) is usually introduced to effectively remove impurity ions during the SiO 2 growth process, thereby improving the quality of the SiO 2 film.
目前，热氧化生长过程中DCE是通过N2的携带方式通入的。具体参照图1。装有DCE的DCE容器4与氧化炉管腔体1之间通过进气管3连接，进气管3将通过N2携带的DCE送入所述氧化炉管1内；进气管2用于将携带气体N2通入DCE容器4内。At present, DCE is fed through N 2 in the process of thermal oxidation growth. Refer to Figure 1 for details. The DCE container 4 equipped with DCE is connected with the oxidation furnace tube cavity 1 through the inlet pipe 3, and the inlet pipe 3 sends the DCE carried by N into the oxidation furnace tube 1; the inlet pipe 2 is used for carrying the gas N 2 is passed into the DCE container 4 .
当前热氧化薄膜生长即时监测(Monitor)的数据是薄膜的厚度(Thickness)和晶圆的颗粒度(Particle)。是否通入了DCE，不能通过SiO2薄膜厚度和颗粒度来反映，只能通过SiO2薄膜质量来反应。而在大规模生成过程中，通常SiO2的薄膜质量只能通过最终的电学性能来反应，时间较长(一到两个月)，因而如果SiO2薄膜质量发生问题的话，影响是很大的。Currently, the real-time monitoring (Monitor) data of thermal oxidation film growth are film thickness (Thickness) and wafer particle size (Particle). Whether or not DCE is introduced can not be reflected by the thickness and particle size of the SiO 2 film, but can only be reflected by the quality of the SiO 2 film. In the large-scale production process, the quality of the SiO 2 film can only be reflected by the final electrical properties, which takes a long time (one to two months), so if there is a problem with the quality of the SiO 2 film, the impact will be great .
现行的方法是通过监测N2的流量，来监测DCE是否通入炉管。但这种方法有时会发生问题，一是因N2的流量很小，通常为0.2slm(每分钟标准升)，监测要求精度较高；其次，偶尔会出现N2流量正常，而DCE没有通入炉管腔体的情况，例如，如果DCE已经用完，虽然N2流量一直显示正常，但实际上没有DCE通入炉管腔体。没有通入DCE而生长出来的SiO2质量会受到很大影响，从而影响产品的性能，严重时会造成产品报废的危险。The current method is to monitor whether DCE is passed into the furnace tube by monitoring the flow of N 2 . But this method sometimes has problems. First, because the flow of N 2 is very small, usually 0.2 slm (standard liter per minute), the monitoring requires high precision; secondly, occasionally the flow of N 2 is normal, but the DCE does not communicate. Into the furnace tube cavity, for example, if DCE has been used up, although the N 2 flow has been shown to be normal, but in fact there is no DCE into the furnace tube cavity. The quality of SiO 2 grown without DCE will be greatly affected, thereby affecting the performance of the product, and in severe cases, it will cause the risk of product scrapping.
因此，需要一种及时有效的方法来确认是否每次热氧化生长SiO2的工艺过程中，DCE都正常通入了，从而确保SiO2薄膜的质量。Therefore, a timely and effective method is needed to confirm whether the DCE is normally introduced during each process of growing SiO 2 by thermal oxidation, so as to ensure the quality of the SiO 2 film.
发明内容 Contents of the invention
本发明的目的是克服现有技术的缺陷，提供一种避免氧化炉管二氯乙烯失效的方法和装置。The purpose of the present invention is to overcome the defects of the prior art, and provide a method and device for avoiding the failure of the ethylene dichloride in the oxidation furnace tube.
实现本发明目的的技术方案是：The technical scheme that realizes the object of the present invention is:
一种避免氧化炉管二氯乙烯失效的方法，用于确保热氧化生长过程中二氯乙烯通过N2的携带方式正常通入所述氧化炉管内，对于每个含有二氯乙烯的工艺制程，采集其二氯乙烯重量减少的数据，以确保二氯乙烯重量的减少量在正常值范围内。A method for avoiding the failure of ethylene dichloride in the oxidation furnace tube is used to ensure that ethylene dichloride is normally passed into the oxidation furnace tube through the carrying mode of N2 during the thermal oxidation growth process. For each process containing ethylene dichloride, the collected The data on the weight reduction of dichlorethylene to ensure that the weight reduction of dichlorethylene is within the normal range.
其中采集二氯乙烯重量减少的数据的步骤包括：在制程的开始和结束时分别采集二氯乙烯容器内的二氯乙烯重量数据。如果所述二氯乙烯重量的减少量不在正常值范围内，则报警停机检查。所述正常值范围在DCE正常消耗量标准值的±10％范围内。优选地，所述报警包括语音报警和/或声光报警。The step of collecting the data on the weight reduction of the dichloride ethylene includes: collecting the weight data of the dichloride ethylene in the dichloride container at the beginning and the end of the process respectively. If the reduction in the weight of the dichlorethylene is not within the normal range, an alarm will be given to stop the machine for inspection. The range of normal values is in the range of ±10% of the normal consumption standard value of DCE. Preferably, the alarm includes a voice alarm and/or an audible and visual alarm.
本发明还提供了一种避免氧化炉管二氯乙烯失效的装置，采用所述方法，包括氧化炉管和二氯乙烯容器，所述二氯乙烯容器与所述氧化炉管之间通过进气管连接，所述进气管将通过N2携带的二氯乙烯送入所述氧化炉管内，在所述二氯乙烯容器的下方安装有重量测量装置，用于每完成一个含有二氯乙烯的工艺制程后，采集所述二氯乙烯重量减少的数据。The present invention also provides a device for avoiding the failure of ethylene dichloride in the oxidation furnace tube, adopting the method, including the oxidation furnace tube and the ethylene dichloride container, and the gas inlet pipe is passed between the ethylene dichloride container and the oxidation furnace tube connected, the inlet pipe will send the ethylene dichloride carried by N2 into the oxidation furnace tube, and a weight measuring device is installed below the ethylene dichloride container for each finished process containing ethylene dichloride , collecting data on the weight reduction of the dichloroethylene.
优选地，所述重量测量装置还包括报警器，所述报警包括语音报警和/或声光报警，当所述二氯乙烯的重量减少数据不在正常值范围内时发出报警信号。Preferably, the weight measuring device further includes an alarm, and the alarm includes a voice alarm and/or an audible and visual alarm, and an alarm signal is sent when the weight reduction data of the dichlorethylene is not within a normal range.
优选地，所述正常值范围在DCE正常消耗量标准值的±10％范围内。Preferably, the normal value range is within the range of ±10% of the normal DCE consumption standard value.
本发明通过直接监测DCE的重量是否减少来确保DCE送入氧化炉管内，消除了传统技术中通过监测N2的流量而间接地监测DCE是否送入氧化炉管所隐藏的不确定因素，保证了DCE能够有效去除SiO2生长过程的杂质离子，确保了SiO2的薄膜质量。The present invention ensures that DCE is sent into the oxidation furnace tube by directly monitoring whether the weight of DCE is reduced, eliminates the hidden uncertain factors in the traditional technology by monitoring the flow of N2 and indirectly monitoring whether DCE is sent into the oxidation furnace tube, and ensures DCE can effectively remove impurity ions in the growth process of SiO 2 and ensure the film quality of SiO 2 .
附图说明 Description of drawings
图1为氧化炉管的结构示意图；Fig. 1 is the structural representation of oxidation furnace tube;
图2为本发明一个实施例中的带有DCE重量测量装置的氧化炉管的结构示意图；Fig. 2 is the structural representation of the oxidation furnace tube with DCE weight measuring device in one embodiment of the present invention;
图3为本发明一个实施例的DCE重量随工艺次数线性减轻的曲线图。Fig. 3 is a graph showing the DCE weight decreasing linearly with the number of processes in an embodiment of the present invention.
具体实施方式 Detailed ways
以下结合附图并以具体实施方式为例，对本发明进行详细说明。但是，本领域技术人员应该知晓的是，本发明不限于所列出的具体实施方式，只要符合本发明的精神，都应该包括于本发明的保护范围内。The present invention will be described in detail below in conjunction with the accompanying drawings and by taking specific implementations as examples. However, those skilled in the art should know that the present invention is not limited to the specific embodiments listed, as long as it conforms to the spirit of the present invention, it should be included in the protection scope of the present invention.
因为DCE正常消耗时，DCE的重量会随着工艺次数的增加而线性减小。所以如果DCE重量没有减小就说明DCE没有通入氧化炉管管腔体。本发明通过监测DCE的重量是否减少来监测SiO2的薄膜的生长，从而确保SiO2的薄膜质量。Because when DCE is normally consumed, the weight of DCE will decrease linearly as the number of processes increases. Therefore, if the weight of DCE does not decrease, it means that DCE has not passed into the tube cavity of the oxidation furnace. The invention monitors the growth of the SiO 2 film by monitoring whether the weight of the DCE decreases, thereby ensuring the quality of the SiO 2 film.
如图2所示，本发明在氧化炉管外的DCE容器4的下方安装了一个DCE重量测量装置5。DCE重量测量装置5一般选用高精度电子称重装置，在一个优选实施例中，DCE重量测量装置5的最大称重为10公斤，最小刻度为1克。每进行一个含有DCE的工艺制程时，均在制程的开始和结束时自动采集DCE容器4内的DCE重量数据，正常情况下每个制程DCE容器4内的DCE重量会减少，而且这一重量减少量是固定的，自动采集的2个DCE重量的差值——即氧化炉管腔体1内消耗的DCE量——应该在正常值范围内。一般地，该正常值应该在DCE正常消耗量标准值的±10％范围内。As shown in Figure 2, the present invention installs a DCE weight measuring device 5 under the DCE container 4 outside the oxidation furnace tube. The DCE weight measuring device 5 generally uses a high-precision electronic weighing device. In a preferred embodiment, the maximum weighing of the DCE weight measuring device 5 is 10 kg, and the minimum scale is 1 gram. Every time a process containing DCE is carried out, the DCE weight data in the DCE container 4 is automatically collected at the beginning and end of the process. Normally, the DCE weight in the DCE container 4 of each process will decrease, and this weight will decrease. The amount is fixed, and the difference between the weights of the two DCEs automatically collected—that is, the amount of DCE consumed in the oxidation furnace tube cavity 1—should be within the normal range. Generally, the normal value should be in the range of ±10% of the normal DCE consumption standard value.
通过采集DCE重量减少的数据对所述DCE的供给量进行直接监测，可以清楚反映出是否每次都有足够量的DCE通进氧化炉管腔体1内，从而确保了SiO2的薄膜质量。By directly monitoring the supply of DCE by collecting the data of DCE weight reduction, it can clearly reflect whether there is enough DCE to pass into the oxidation furnace tube cavity 1 every time, thereby ensuring the quality of the SiO2 film.
从图3可看出，在本发明一个实施例中，DCE重量随工艺次数线性减轻的曲线图。如图3中，DCE未使用时为6000克，每次使用消耗量为100克，则经过10次工艺后，DCE的重量减少至5100克(具体可见下表)。It can be seen from FIG. 3 that in one embodiment of the present invention, the DCE weight decreases linearly with the number of processes. As shown in Figure 3, DCE is 6000 grams when it is not used, and the consumption of each use is 100 grams. After 10 processes, the weight of DCE is reduced to 5100 grams (see the table below for details).
在本发明的另外一个实施例中，DCE重量测量装置5内部还包括一个报警器(图中未示)，报警器可采用各种形式，例如语音报警和/或声光报警、等等。如果对所述DCE的重量的减少量不在正常值范围内，例如正常工艺过程需要通入DCE100克，而工艺结束后，DCE的重量减少量少于90克，就说明DCE没有通入氧化炉管管腔体或者通入的量不足够，则报警器发出报警信号，以便停机检查，并对已完成制程的晶圆(Wafer)进行返工(Rework)。In another embodiment of the present invention, the DCE weight measuring device 5 also includes an alarm (not shown in the figure), and the alarm can take various forms, such as voice alarm and/or sound and light alarm, etc. If the reduction in the weight of the DCE is not within the normal value range, for example, 100 grams of DCE needs to be fed into the normal process, and after the process is completed, the weight reduction of DCE is less than 90 grams, which means that the DCE has not been passed into the oxidation furnace tube If the tube cavity or the amount of access is not enough, the alarm will send out an alarm signal, so that the machine can be stopped for inspection, and the wafer (Wafer) that has been processed can be reworked (Rework).
本发明的方法和装置同样适合于其它需要通过气体携带(如N2)而通入腔体的试剂或者溶液。The method and device of the present invention are also suitable for other reagents or solutions that need to be carried into the cavity by gas (such as N 2 ).
应该注意的是上述实施例是示例而非限制本发明，本领域技术人员将能够设计很多替代实施例而不脱离附后的权利要求书的范围。It should be noted that the above-mentioned embodiments illustrate rather than limit the invention, and that those skilled in the art will be able to design many alternative embodiments without departing from the scope of the appended claims.
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