CN102840946A - Pressure sensor - Google Patents
Pressure sensor Download PDFInfo
- Publication number
- CN102840946A CN102840946A CN2011101682080A CN201110168208A CN102840946A CN 102840946 A CN102840946 A CN 102840946A CN 2011101682080 A CN2011101682080 A CN 2011101682080A CN 201110168208 A CN201110168208 A CN 201110168208A CN 102840946 A CN102840946 A CN 102840946A
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- Prior art keywords
- thin slice
- silicon strain
- diaphragm
- silicate thin
- strain gage
- Prior art date
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- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims abstract description 84
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 69
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- 238000005245 sintering Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 14
- 230000008569 process Effects 0.000 claims description 13
- 238000009413 insulation Methods 0.000 claims description 9
- 230000008859 change Effects 0.000 abstract description 5
- 239000011159 matrix material Substances 0.000 description 9
- 230000015556 catabolic process Effects 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000012360 testing method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000012797 qualification Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- Measuring Fluid Pressure (AREA)
Abstract
The invention provides a pressure sensor. The pressure sensor comprises a base, wherein the base is covered with a diaphragm. The pressure sensor further comprises a silicate film and a silicon strain gauge; the silicate film is connected with the diaphragm; part of silicon strain gauge is immersed into the silicate film which is partially exposed; and the silicon strain gauge is insulated from the diaphragm. According to the pressure sensor provided by the invention, the silicon strain gauge is indirectly connected with the diaphragm through the silicate film; a thermal expansion coefficient of the silicate film is similar as that of the silicon strain gauge, and therefore the break between the silicate film and the silicon strain gauge due to the change of ambient temperature is avoided and the phenomena that the silicon strain gauge is not insulated form the diaphragm and further is broken down due to the fact that the silicon strain gauge is broken off the silicate film are prevented.
Description
Technical field
The present invention relates to a kind of pressure transducer.
Background technology
Pressure transducer is a kind of sensor the most commonly used in the commercial Application; Normally used pressure transducer mainly utilizes the piezoelectric effect manufacturing to form, and wherein, screwed base is fixedly connected with extraneous pipe arrangement; Fluid through extraneous pipe arrangement with force transfer to base; The diaphragm that has on the base is under pressure miniature deformation can take place, and this moment is according to the deformation of diaphragm, and the resistance value of the silicon strain gage that is connected indirectly with diaphragm also changes; Further, utilize the circuit board that is connected with silicon strain gage the change transitions of resistance value to be become the variation output of magnitude of voltage.
At present, usually with silicon strain gage through glue on diaphragm, need guarantee the insulation of silicon strain gage and diaphragm during stickup, accomplish stickup through manual, error coefficient is big, is inappropriate for large-scale mass production.In addition, consider that thermal expansivity differs very big between the glue of silicon strain gage and stickup, in case run into variation of ambient temperature, fracture easily between silicon strain gage and the glue, silicon strain gage and diaphragm no longer insulate, and are easy to cause silicon strain gage breakdown.
Summary of the invention
The object of the present invention is to provide a kind of pressure transducer, to solve in the existing pressure transducer between the silicon strain gage and glue the problem of fracture easily.
For addressing the above problem; The present invention proposes a kind of pressure transducer, comprise base, be coated with diaphragm on the said base; Said pressure transducer also comprises silicate thin slice and silicon strain gage; Said silicate thin slice and said diaphragm adhesion, said silicon strain gage are partly immersed part and are exposed to said silicate thin slice, and said silicon strain gage and the insulation of said diaphragm.
Preferably, the thickness range of said silicate thin slice is 50 microns to 100 microns.
Preferably, said silicate thin slice is through sintering process and said diaphragm adhesion.
Preferably, the temperature of said sintering process is 500 ℃～650 ℃.
Preferably, make said silicon strain gage partly immerse part through sintering process and expose to said silicate thin slice.
Preferably, the temperature of said sintering process is 450 ℃～540 ℃.
Preferably, said silicate thin slice is shaped as cuboid.
Preferably, the quantity of said silicate thin slice is a plurality of, in each said silicate thin slice a said silicon strain gage is set.
Preferably, the quantity of said silicate thin slice is a plurality of, and a plurality of separate said silicon strain gages are set in each said silicate thin slice.
Preferably, the surface of said diaphragm has frosted.
Pressure transducer provided by the invention; Silicon strain gage is connected with diaphragm through the silicate thin slice indirectly; The thermal expansivity of silicate thin slice is close with the thermal expansivity of silicon strain gage; The variation of environment temperature can not cause rupturing between silicate thin slice and the silicon strain gage, has avoided silicon strain gage because after rupturing with the silicate thin slice, and silicon strain gage and diaphragm no longer insulate and breakdown.
Further, the surface of diaphragm has the contact area that frosted can increase silicate thin slice and diaphragm, has further improved the intensity that combines between silicate thin slice and the diaphragm.
Further, the silicate thin slice is provided with the parameter of sintering process through sintering process and diaphragm adhesion, the thickness of control silicate thin slice.
Further, silicon strain gage partly immerses part through sintering process and exposes to said silicate thin slice, and the parameter of sintering process is set; The degree of depth that the control silicon strain gage immerses the silicate thin slice; Silicon strain gage is partially immersed in the silicate thin slice, and another part exposes to the silicate thin slice again, and makes silicon strain gage not touch diaphragm; With the diaphragm insulation, adopt the adhesion of this technology realization silicon strain gage and silicate thin slice can carry out mass production.
Description of drawings
The cross-sectional view of the pressure transducer that Fig. 1 provides for the embodiment of the invention.
Embodiment
The pressure transducer that the present invention is proposed below in conjunction with accompanying drawing and specific embodiment do further explain.According to following explanation and claims, advantage of the present invention and characteristic will be clearer.What need explanation is, accompanying drawing all adopts the form of simplifying very much and all uses non-ratio accurately, only is used for conveniently, the purpose of the aid illustration embodiment of the invention lucidly.
Core concept of the present invention is; A kind of pressure transducer is provided; Silicon strain gage is connected with diaphragm through the silicate thin slice indirectly, and the thermal expansivity of silicate thin slice is close with the thermal expansivity of silicon strain gage, and the variation of environment temperature can not cause rupturing between silicate thin slice and the silicon strain gage; Avoided silicon strain gage because after rupturing with the silicate thin slice, silicon strain gage and diaphragm no longer insulate and breakdown.
The cross-sectional view of the pressure transducer that Fig. 1 provides for the embodiment of the invention.With reference to Fig. 1; Pressure transducer comprises base 11; Be coated with diaphragm 12 on the said base 11, said pressure transducer also comprises silicate thin slice 13 and silicon strain gage 14, said silicate thin slice 13 and said diaphragm 12 adhesions; Said silicon strain gage 14 parts immerse part and expose to said silicate thin slice 13, and said silicon strain gage 14 and said diaphragm 12 insulation.
In the present embodiment; The thickness range of silicate thin slice 13 is 50 microns to 100 microns; Said silicate thin slice 13 be shaped as cuboid, the quantity of said silicate thin slice 13 is two, and a said silicon strain gage 14 is set in each said silicate thin slice 13.Will be understood by those skilled in the art that, a plurality of separate said silicon strain gages 14 also can be set in the said silicate thin slice 13.Above-mentioned numerical value also is not used in qualification the present invention; Will be understood by those skilled in the art that; As long as the thickness of said silicate thin slice 13 can satisfy the silicon strain gage 14 of adhesion with it; Some gets in the silicate thin slice 13, and another part exposes to silicate thin slice 13, and gets final product with diaphragm 12 insulation.
In the present embodiment; A silicon strain gage 14 is set on said silicate thin slice 13, promptly on two silicate thin slices 13 silicon strain gage 14 is set respectively, whole diaphragm 12 is provided with two silicon strain gages 14; Each silicon strain gage 14 comprises two resistance; Two silicon strain gages 14 are formed an electric bridge, when supplying power to electric bridge, can export a signal that is directly proportional with pressure to be tested.
The method for making of the pressure transducer that the embodiment of the invention provides is following: at first; The base 11 that is coated with diaphragm 12 is provided; The a plurality of silicate matrixs of printing on said diaphragm 12; Said silicate matrix is carried out first sintering, make the silicate thin slice 13 of said silicate matrix formation and said diaphragm 12 adhesions; Afterwards, a silicon strain gage 14 is set on said silicate thin slice 13; Said silicate thin slice 13 is carried out the sintering second time, make said silicon strain gage 14 parts immerse part and expose to said silicate thin slice 13, and make said silicon strain gage 14 and said diaphragm 12 insulation.
Particularly, diaphragm 12 covering bases 11 surfaces and one-body molded with base 11, base 11 is cylinder; Its xsect is positive hexagon shape, has screw thread on the base 11, is used for closing with the pipe arrangement (not shown) is stubborn; Screw thread coupling on screw thread on the said pipe arrangement and the base 11; In addition, also be provided with seal member on the said pipe arrangement, leak from the junction of pipe arrangement and base 11 with the air-flow that prevents to come in from pipe arrangement.Then; Sanding is carried out on the surface of said diaphragm 12 to be handled; Diaphragm 12 surfaces of handling through sanding can increase the contact area of silicate matrix and diaphragm 12, have further improved the intensity that combines between silicate matrix and the diaphragm 12, afterwards; Diaphragm 12 surfaces are cleaned and dried, print the process environments of silicate matrix after guaranteeing.In the present embodiment, on said diaphragm 12, print a plurality of silicate matrixs through serigraphy, the quantity of said silicate matrix is 2.
Further; Said silicate matrix is carried out first sintering; The technological temperature of sintering is 500 ℃～650 ℃; Control silicate matrix so that the silicate matrix forms the silicate thin slice 13 that satisfies the certain thickness needs, and makes said silicate thin slice 13 and said diaphragm 12 adhesions in the time of sintering equipment.Silicate thin slice 13 is glassy.
Further, said silicate thin slice 13 is carried out the sintering second time, control sintering temperature and silicate thin slice 13 are in the time of sintering equipment; Make said silicon strain gage 14 parts immerse part and expose to said silicate thin slice 13, and make said silicon strain gage 14 and said diaphragm 12 insulation, at this moment; The technological temperature of sintering is 450 ℃～540 ℃ for the second time, after sintering finishes, silicon strain gage 14 and silicate thin slice 13 is clung; Silicon strain gage 14 is connected with diaphragm 12 through silicate thin slice 13 indirectly; Silicon strain gage 14 does not contact with diaphragm 12, keeps silicon strain gage 14 insulation, and is breakdown to prevent silicon strain gage 14.It is emphasized that said silicon strain gage 14 all is not immersed in the silicate thin slice 13, its some expose to silicate thin slice 13, be used for being connected with circuit board, the resistance variations of silicon strain gage 14 is transformed into change in voltage exports.
When the pressure transducer that utilizes the present invention to make carries out pressure survey; In the present embodiment; The force value that needs test airflow, air communication are crossed pipe arrangement and on base 11, are applied a pressure, are arranged on diaphragm 12 on the base 11 owing to microdeformation takes place said pressure; Change along with the variation of pressure with the resistance value of the diaphragm 12 indirect silicon strain gages 14 that are connected, and change resistance value into magnitude of voltage output through the circuit board that is connected with silicon strain gage 14.The pressure sensitivity of the pressure transducer test that the embodiment of the invention provides is high, and precision is high, and the volume of pressure transducer is little, is easy to carry.
Obviously, those skilled in the art can carry out various changes and modification to invention and not break away from the spirit and scope of the present invention.Like this, belong within the scope of claim of the present invention and equivalent technologies thereof if of the present invention these are revised with modification, then the present invention also is intended to comprise these changes and modification interior.
Claims (10)
1. pressure transducer; Comprise base, be coated with diaphragm on the said base, it is characterized in that; Also comprise silicate thin slice and silicon strain gage; Said silicate thin slice and said diaphragm adhesion, said silicon strain gage are partly immersed part and are exposed to said silicate thin slice, and said silicon strain gage and the insulation of said diaphragm.
2. pressure transducer as claimed in claim 1 is characterized in that, the thickness range of said silicate thin slice is 50 microns to 100 microns.
3. pressure transducer as claimed in claim 1 is characterized in that, said silicate thin slice is through sintering process and said diaphragm adhesion.
4. pressure transducer as claimed in claim 3 is characterized in that, the temperature of said sintering process is 500 ℃～650 ℃.
5. pressure transducer as claimed in claim 1 is characterized in that, makes said silicon strain gage partly immerse part through sintering process and exposes to said silicate thin slice.
6. pressure transducer as claimed in claim 5 is characterized in that, the temperature of said sintering process is 450 ℃～540 ℃.
7. pressure transducer as claimed in claim 1 is characterized in that, said silicate thin slice be shaped as cuboid.
8. pressure transducer as claimed in claim 1 is characterized in that, the quantity of said silicate thin slice is a plurality of, in each said silicate thin slice a said silicon strain gage is set.
9. pressure transducer as claimed in claim 1 is characterized in that, the quantity of said silicate thin slice is a plurality of, and a plurality of separate said silicon strain gages are set in each said silicate thin slice.
10. pressure transducer as claimed in claim 1 is characterized in that the surface of said diaphragm has frosted.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101682080A CN102840946A (en) | 2011-06-21 | 2011-06-21 | Pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2011101682080A CN102840946A (en) | 2011-06-21 | 2011-06-21 | Pressure sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102840946A true CN102840946A (en) | 2012-12-26 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011101682080A Pending CN102840946A (en) | 2011-06-21 | 2011-06-21 | Pressure sensor |
Country Status (1)
| Country | Link |
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| CN (1) | CN102840946A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040237659A1 (en) * | 2003-04-01 | 2004-12-02 | Siemens Aktiengesellschaft | Pressure sensor |
| CN101825506A (en) * | 2009-03-02 | 2010-09-08 | 欧姆龙株式会社 | Semiconductor sensor and the manufacturing method thereof |
| CN101846563A (en) * | 2009-03-24 | 2010-09-29 | 三菱电机株式会社 | Semiconductor pressure sensor and method of producing the same |
| KR101015790B1 (en) * | 2010-03-23 | 2011-02-18 | (주)센서시스템기술 | Mechanical sensor and manufacturing method |
| CN202133491U (en) * | 2011-06-21 | 2012-02-01 | 江苏恩泰传感器有限公司 | Pressure transducer |
-
2011
- 2011-06-21 CN CN2011101682080A patent/CN102840946A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040237659A1 (en) * | 2003-04-01 | 2004-12-02 | Siemens Aktiengesellschaft | Pressure sensor |
| CN101825506A (en) * | 2009-03-02 | 2010-09-08 | 欧姆龙株式会社 | Semiconductor sensor and the manufacturing method thereof |
| CN101846563A (en) * | 2009-03-24 | 2010-09-29 | 三菱电机株式会社 | Semiconductor pressure sensor and method of producing the same |
| KR101015790B1 (en) * | 2010-03-23 | 2011-02-18 | (주)센서시스템기술 | Mechanical sensor and manufacturing method |
| CN202133491U (en) * | 2011-06-21 | 2012-02-01 | 江苏恩泰传感器有限公司 | Pressure transducer |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: JIA QINGFENG Free format text: FORMER OWNER: JIANGSU ENTECH SENSOR CO., LTD. Effective date: 20140126 |
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| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20140126 Address after: 224051 Salt Lake highway 52, Ting Hu District, Jiangsu, Yancheng City Applicant after: Jia Qingfeng Address before: 224051 Salt Lake highway 18, Jiangsu, Yancheng City Applicant before: Jiangsu Entech Sensor Co., Ltd. |
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20121226 |