CN102854677A - Array substrate, production method of array substrate and display device - Google Patents

Abstract

The invention provides an array substrate, a manufacturing method of the array substrate and a display device, which belong to the field of liquid crystal display. The gate insulating layer of the array substrate is made of black insulating material, and the gate insulating layer has an opening exposing the pixel region. The invention can improve the quality of the display screen.

Description

Array substrate, method for manufacturing array substrate, and display device

technical field

The invention relates to the field of liquid crystal display, in particular to an array substrate, a manufacturing method of the array substrate and a display device.

Background technique

The liquid crystal display includes pixel units designed in a matrix form, and a driving circuit for driving these pixel units. The liquid crystal molecules are deflected through the change of the electric field in the liquid crystal cell to achieve the display effect.

Most of the existing liquid crystal display devices adopt the traditional black matrix manufacturing technology, that is, in order to avoid the problem of light leakage, the black matrix is fabricated on the color filter substrate, and the red color resistance R, the green color resistance G and the blue color resistance B are respectively overlapped. (Over Lap) is connected with the black matrix. Such a structure will inevitably bring about the problem of angular difference, which seriously affects the quality of the display image.

Contents of the invention

The technical problem to be solved by the present invention is to provide an array substrate, a manufacturing method of the array substrate and a display device, so as to improve the quality of the display screen.

In order to solve the problems of the technologies described above, the present invention provides technical solutions as follows:

An array substrate, the gate insulating layer of the array substrate is made of black insulating material, and the gate insulating layer has an opening exposing a pixel region.

The array substrate includes:

Substrate;

gate electrodes and gate lines formed on the substrate;

the gate insulating layer formed on the substrate on which the gate electrodes and gate lines are formed;

a semiconductor layer formed on the gate insulating layer;

a data line, a source electrode, and a drain electrode formed on the semiconductor layer;

a passivation layer formed on the substrate on which the data lines, source electrodes, and drain electrodes are formed, and via holes are formed on the passivation layer;

A pixel electrode is formed on the passivation layer, and the pixel electrode is connected to the drain electrode through the via hole.

The above-mentioned array substrate, which also includes:

An ohmic contact layer is formed between the source electrode, the drain electrode and the semiconductor layer.

In the above array substrate, wherein: the black insulating material is an organic material.

A method for manufacturing an array substrate. The method uses a black insulating material to form a gate insulating layer of the array substrate, and forms an opening exposing a pixel region in the gate insulating layer.

The manufacturing method includes:

forming gate electrodes and gate lines on the substrate;

forming the gate insulating layer on the substrate on which the gate electrodes and gate lines are formed;

forming a semiconductor layer, a data line, a source electrode and a drain electrode on the gate insulating layer;

forming a passivation layer on the substrate on which the semiconductor layer, data lines, source electrodes and drain electrodes are formed, and forming via holes on the passivation layer;

A pixel electrode is formed on the passivation layer, and the pixel electrode is connected to the drain electrode through the via hole.

The above-mentioned manufacturing method also includes:

at the source electrode. An ohmic contact layer is formed between the drain electrode and the semiconductor layer.

In the above manufacturing method, wherein: the black insulating material is an organic material.

A display device includes the above-mentioned array substrate.

According to the above technical solution of the present invention, the gate insulating layer of the array substrate is formed by using a black insulating material, and an opening exposing the pixel region is formed in the gate insulating layer, so that the gate insulating layer simultaneously functions as a black matrix, It can avoid the angle difference problem of the color filter substrate in the manufacturing process of the existing display device, thereby improving the quality of the display picture. In addition, since the corner difference is avoided, the coating of the flat layer of the color filter substrate can be omitted, thereby reducing the manufacturing cost of the display device.

Description of drawings

1 is a schematic cross-sectional view of an array substrate according to an embodiment of the present invention;

2 is a schematic plan view of a gate insulating layer in an array substrate according to an embodiment of the present invention;

3 to 6 are schematic diagrams of the manufacturing process of the array substrate according to the embodiment of the present invention.

Detailed ways

In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

In order to avoid the angular step difference problem of the color filter substrate in the manufacturing process of the existing display device, an embodiment of the present invention provides a display device, the display device includes an array substrate, a color filter substrate, and an array substrate and the The liquid crystal layer between the color filter substrates. Wherein, the color filter substrate does not include a black matrix; the gate insulating layer of the array substrate is made of black insulating material, and the gate insulating layer has an opening exposing the pixel area, so that the gate insulating layer simultaneously functions as a black The role of the matrix. Specifically, the display device may be a liquid crystal panel, a liquid crystal television, a mobile phone, a liquid crystal display, and the like.

FIG. 1 is a schematic cross-sectional view of an array substrate according to an embodiment of the present invention. Referring to FIG. 1, the array substrate may include:

Substrate 1;

A gate electrode 2 and a gate line (not shown) formed on the substrate 1;

The gate insulating layer 3 formed on the substrate 1 formed with the gate electrode 2 and the gate line, the gate insulating layer 3 is made of black insulating material, and the gate insulating layer 3 has an opening exposing the pixel region;

a semiconductor layer 4 formed on the gate insulating layer 3;

A data line (not shown), a source electrode 6 and a drain electrode 7 formed on the semiconductor layer 4;

a passivation layer 8 formed on the substrate 1 on which the data line, source electrode 6 and drain electrode 7 are formed, and a via hole 9 is formed on the passivation layer;

A pixel electrode 10 formed on the passivation layer 8 is connected to the drain electrode 8 through the via hole 9 .

Optionally, the array substrate further includes an ohmic contact layer 5 formed between the source electrode 6 , the drain electrode 7 and the semiconductor layer 4 .

FIG. 2 is a schematic plan view of a gate insulating layer in an array substrate according to an embodiment of the present invention. It can be seen from FIG. 1 and FIG. 2 that the gate insulating layer 3 covers the gate lines, data lines and thin film transistors in a direction perpendicular to the array substrate, and exposes the pixel area, thus playing the role of a black matrix. This method can enhance the shading intensity between each sub-pixel, thereby avoiding the occurrence of color crosstalk.

Optionally, the black insulating material is an organic material. By using organic materials, advantages such as low threshold voltage, low leakage, and high mobility can be brought to the array substrate.

An embodiment of the present invention also provides a method for manufacturing the above-mentioned array substrate, which may include the following steps:

Step S1, providing a substrate, forming gate lines and gate electrodes on the substrate;

As shown in FIG. 3, firstly, sputtering, thermal evaporation or other film forming methods can be used to form a gate metal layer on the glass substrate 1 or other types of transparent substrate 1. The gate metal layer can be made of chromium (Cr), molybdenum ( Mo), aluminum (Al), copper (Cu), tungsten (W), neodymium (Nd) and their alloys, and the gate metal layer can be one or more layers; then, a photoresist is formed on the gate metal layer Secondly, the photoresist is exposed and developed by using a patterned mask to form a photoresist mask; thirdly, the gate metal layer is etched by using the photoresist mask to form a gate line and a gate electrode 2 ; Finally, strip the remaining photoresist.

Step S2, forming a gate insulating layer on the substrate after step S1;

As shown in FIG. 2 and FIG. 4 , firstly, a gate insulating film may be deposited on the substrate 1 by using methods such as plasma enhanced chemical vapor deposition (PECVD), wherein the gate insulating film is made of a black insulating material. Optionally, The black insulating material is an organic material; then, a photoresist is formed on the gate metal film; secondly, the photoresist is exposed and developed by using a patterned mask plate to form a photoresist mask; again, the photoresist is formed by using The photoresist mask is used to etch the gate insulating film to form the pattern of the gate insulating layer 3; finally, the remaining photoresist is stripped.

Step S3, forming a semiconductor layer, an ohmic contact layer, a data line, a source electrode and a drain electrode on the substrate after step S2;

As shown in FIG. 5 , firstly, a semiconductor film, an ohmic contact film, and a source-drain metal film are sequentially deposited on the substrate 1; then, a photoresist layer is formed on the source-drain metal film; The photoresist layer is exposed and developed by a tone or half-tone mask plate to form a photoresist mask including a photoresist fully reserved area, a photoresist partially reserved area and a photoresist unreserved area; again, using photoresist The resist mask etches the source-drain metal film, the ohmic contact film and the semiconductor film in the photoresist unreserved area to form the data line and the pattern of the semiconductor layer 4; again, remove the part of the photoresist reserved area by the ashing process The photoresist, the photoresist in the photoresist completely reserved area is thinned to form a new photoresist mask; again, the exposed source-drain metal film and ohmic contact film are etched using the new photoresist mask, Form the pattern of the source electrode 6 and the drain electrode 7, and complete the channel of the thin film transistor; finally, strip the remaining photoresist.

Step S4, forming a passivation layer on the substrate after step S3, and patterning the passivation layer;

As shown in Figure 6, at first, methods such as PECVD can be used to form a passivation layer 8 with a thickness of 100% on the substrate 1, and the passivation layer 8 can use materials such as SiNx or SiOx; Resist; secondly, use a patterned mask to expose and develop the photoresist to form a photoresist mask; thirdly, use a photoresist mask to etch the passivation layer to expose the drain electrode 7. Form a via hole 9; finally, strip off the remaining photoresist.

Step S5, forming pixel electrodes on the substrate after step S4.

As shown in Figure 1, firstly, magnetron sputtering, thermal evaporation or other film forming methods can be used to form a transparent conductive layer on the substrate 1, and the transparent conductive layer can be made of indium tin oxide (ITO), indium zinc oxide ( IZO) or aluminum zinc oxide and other materials; then, a photoresist is formed on the transparent conductive layer; secondly, the photoresist is exposed and developed by using a patterned mask plate to form a photoresist mask; thirdly, a photoresist mask is formed by using The photoresist mask etches the transparent conductive layer to form a pixel electrode 10, wherein the pixel electrode 10 is connected to the drain electrode 7 through a via hole 9; finally, the remaining photoresist is peeled off

Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention and not to limit it. Those of ordinary skill in the art should understand that the technical solution of the present invention can be modified or equivalently replaced without departing from the technical solution of the present invention. The spiritual scope of the invention should be included in the scope of the claims of the present invention.

Claims (9)

1. An array substrate, characterized in that: the gate insulating layer of the array substrate is made of black insulating material, and the gate insulating layer has openings exposing pixel regions. 2. The array substrate according to claim 1, wherein the array substrate comprises: Substrate; gate electrodes and gate lines formed on the substrate; the gate insulating layer formed on the substrate on which the gate electrodes and gate lines are formed; a semiconductor layer formed on the gate insulating layer; a data line, a source electrode, and a drain electrode formed on the semiconductor layer; a passivation layer formed on the substrate on which the data lines, source electrodes, and drain electrodes are formed, and via holes are formed on the passivation layer; A pixel electrode is formed on the passivation layer, and the pixel electrode is connected to the drain electrode through the via hole. 3. The array substrate according to claim 2, further comprising: An ohmic contact layer is formed between the source electrode, the drain electrode and the semiconductor layer. 4. The array substrate according to claim 1, characterized in that: The black insulating material is an organic material. 5. A manufacturing method of an array substrate, characterized in that: the manufacturing method uses a black insulating material to form a gate insulating layer of the array substrate, and forms an opening exposing a pixel region in the gate insulating layer. 6. The manufacturing method according to claim 5, characterized in that, the manufacturing method comprises: forming gate electrodes and gate lines on the substrate; forming the gate insulating layer on the substrate on which the gate electrodes and gate lines are formed; forming a semiconductor layer, a data line, a source electrode and a drain electrode on the gate insulating layer; forming a passivation layer on the substrate on which the semiconductor layer, data lines, source electrodes and drain electrodes are formed, and forming via holes on the passivation layer; A pixel electrode is formed on the passivation layer, and the pixel electrode is connected to the drain electrode through the via hole. 7. The manufacturing method according to claim 6, further comprising: at the source electrode. An ohmic contact layer is formed between the drain electrode and the semiconductor layer. 8. The manufacturing method according to claim 5, characterized in that: The black insulating material is an organic material. 9. A display device, characterized by comprising the array substrate according to any one of claims 1-4.

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